CY7C1351G-133BGC

CY7C1351G 4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture Features • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through operation • Byte Write capability • 128K x 36 common I/O architecture • 2.5V/3.3V I/O power supply (VDDQ) • Fast clock-to-output times — 6.5 ns (for 133-MHz device) • Clock Enable (CEN) pin to suspend operation • Synchronous self-timed writes • Asynchronous Output Enable • Available in lead-free 100-Pin TQFP package, lead-free and non-lead-free 119-Ball BGA package • Burst Capability—linear or interleaved burst order • Low standby power Functional Description[1] The CY7C1351G is a 3.3V, 128K x 36 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351G is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 6.5 ns (133-MHz device). Write operations are controlled by the four Byte Write Select (BW[A:D]) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output tri-state control. In order to avoid bus contention, the output drivers are synchronously tri-stated during the data portion of a write sequence. Logic Block Diagram A0, A1, A MODE CLK CEN C CE ADV/LD C WRITE ADDRESS REGISTER ADDRESS REGISTER A1 D1 A0 D0 Q1 A1' A0' Q0 BURST LOGIC ADV/LD BWA BWB BWC BWD WE WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC WRITE DRIVERS MEMORY ARRAY S E N S E A M P S D A T A S T E E R I N G O U T P U T B U F F E R S E DQs DQPA DQPB DQPC DQPD OE CE1 CE2 CE3 ZZ INPUT REGISTER READ LOGIC E SLEEP Control Note: 1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05513 Rev. *D • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised July 4, 2006 [+] [+] Feedback CY7C1351G Selection Guide 133 MHz Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current 6.5 225 40 100 MHz 8.0 205 40 Unit ns mA mA Pin Configurations 100-Pin TQFP Pinout ADV/LD NC/18M BWD BWC BWB BWA CE1 CE2 CE3 VDD VSS CEN CLK WE OE NC/9M A A A 82 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 BYTE C DQPC DQC DQC VDDQ VSS DQC DQC DQC DQC VSS VDDQ DQC DQC NC VDD NC BYTE D VSS DQD DQD VDDQ VSS DQD DQD DQD DQD VSS VDDQ DQD DQD DQPD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 81 A CY7C1351G 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 44 45 46 47 48 49 50 DQPB DQB DQB VDDQ VSS DQB DQB DQB DQB VSS VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA DQA DQA VSS VDDQ DQA DQA DQPA BYTE B BYTE A 39 40 41 42 NC/72M NC/288M NC/144M MODE NC/36M A1 A0 VSS VDD A A A A 43 A A A Document #: 38-05513 Rev. *D A A A A Page 2 of 14 [+] [+] Feedback CY7C1351G Pin Configurations (continued) 119-Ball BGA Pinout 1 A B C D E F G H J K L M N P R T U VDDQ NC/576M NC/1G DQC DQC VDDQ DQC DQC VDDQ DQD DQD VDDQ DQD DQD 2 A CE2 A DQPC DQC DQC DQC DQC VDD DQD DQD DQD DQD DQPD 3 A A A VSS VSS VSS BWC VSS VSS VSS BWD VSS VSS VSS MODE A NC 4 NC/18M ADV/LD VDD NC CE1 OE NC/9M WE VDD CLK NC CEN A1 A0 VDD A NC 5 A A A VSS VSS VSS BWB VSS VSS VSS BWA VSS VSS VSS NC A NC 6 A CE3 A DQPB DQB DQB DQB DQB VDD DQA DQA DQA DQA DQPA 7 VDDQ NC NC DQB DQB VDDQ DQB DQB VDDQ DQA DQA VDDQ DQA DQA A NC/144M NC NC/72M VDDQ NC A NC/288M ZZ NC/36M NC VDDQ Pin Definitions Name A0, A1, A BW[A:D] WE ADV/LD I/O InputSynchronous InputSynchronous InputSynchronous InputSynchronous Description Address Inputs used to select one of the 128K address locations. Sampled at the rising edge of the CLK. A[1:0] are fed to the two-bit burst counter. Byte Write Inputs, active LOW. Qualified with WE to conduct writes to the SRAM. Sampled on the rising edge of CLK. Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This signal must be asserted LOW to initiate a write sequence. Advance/Load Input. Used to advance the on-chip address counter or load a new address. When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address can be loaded into the device for an access. After being deselected, ADV/LD should be driven LOW in order to load a new address. Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK is only recognized if CEN is active LOW. Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2, and CE3 to select/deselect the device. Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. Output Enable, asynchronous input, active LOW. Combined with the synchronous logic block inside the device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state, when the device has been deselected. Clock Enable Input, active LOW. When asserted LOW the Clock signal is recognized by the SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not deselect the device, CEN can be used to extend the previous cycle when required. Page 3 of 14 CLK CE1 CE2 CE3 OE Input-Clock InputSynchronous InputSynchronous InputSynchronous InputAsynchronous CEN InputSynchronous Document #: 38-05513 Rev. *D [+] [+] Feedback CY7C1351G Pin Definitions (continued) Name ZZ I/O InputAsynchronous I/OSynchronous Description ZZ “sleep” Input. This active HIGH input places the device in a non-time critical “sleep” condition with data integrity preserved. During normal operation, this pin has to be low or left floating. ZZ pin has an internal pull-down. Bidirectional Data I/O Lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by address during the clock rise of the read cycle. The direction of the pins is controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave as outputs. When HIGH, DQs and DQP[A:D] are placed in a tri-state condition. The outputs are automatically tri-stated during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to DQs. During write sequences, DQP[A:D] is controlled by BW[A:D] correspondingly. Mode Input. Selects the burst order of the device. When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. Power supply inputs to the core of the device. Ground for the device. No Connects. Not Internally connected to the die. No Connects. Not internally connected to the die. NC/9M,NC/18M,NC/36M,NC/72M, NC/144M, NC/288M, NC/576M and NC/1G are address expansion pins are not internally connected to the die. DQs DQP[A:D] MODE VDD VDDQ VSS NC NC/9M, NC/18M NC/36M NC/72M, NC/144M, NC/288M, NC/576M, NC/1G I/OSynchronous Input Strap Pin Power Supply Ground – – I/O Power Supply Power supply for the I/O circuitry. Functional Overview The CY7C1351G is a synchronous flow-through burst SRAM designed specifically to eliminate wait states during Write-Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock signal is qualified with the Clock Enable input signal (CEN). If CEN is HIGH, the clock signal is not recognized and all internal states are maintained. All synchronous operations are qualified with CEN. Maximum access delay from the clock rise (tCDV) is 6.5 ns (133-MHz device). Accesses can be initiated by asserting all three Chip Enables (CE1, CE2, CE3) active at the rising edge of the clock. If Clock Enable (CEN) is active LOW and ADV/LD is asserted LOW, the address presented to the device will be latched. The access can either be a read or write operation, depending on the status of the Write Enable (WE). BW[A:D] can be used to conduct byte write operations. Write operations are qualified by the Write Enable (WE). All writes are simplified with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) simplify depth expansion. All operations (Reads, Writes, and Deselects) are pipelined. ADV/LD should be driven LOW once the device has been deselected in order to load a new address for the next operation. Single Read Accesses A read access is initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, (3) the Write Enable input signal WE is deasserted HIGH, and 4) ADV/LD is asserted LOW. The address presented to the address inputs is latched into the Address Register and presented to the memory array and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the output buffers. The data is available within 6.5 ns (133-MHz device) provided OE is active LOW. After the first clock of the read access, the output buffers are controlled by OE and the internal control logic. OE must be driven LOW in order for the device to drive out the requested data. On the subsequent clock, another operation (Read/Write/Deselect) can be initiated. When the SRAM is deselected at clock rise by one of the chip enable signals, its output will be tri-stated immediately. Burst Read Accesses The CY7C1351G has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Reads without reasserting the address inputs. ADV/LD must be driven LOW in order to load a new address into the SRAM, as described in the Single Read Access section above. The sequence of the burst counter is determined by the MODE input signal. A LOW input on MODE selects a linear burst mode, a HIGH selects an interleaved burst sequence. Both burst counters use A0 and A1 in the burst sequence, and will wrap around when incremented sufficiently. A HIGH input on Page 4 of 14 Document #: 38-05513 Rev. *D [+] [+] Feedback CY7C1351G ADV/LD will increment the internal burst counter regardless of the state of chip enable inputs or WE. WE is latched at the beginning of a burst cycle. Therefore, the type of access (Read or Write) is maintained throughout the burst sequence. Single Write Accesses Write access are initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, and (3) the write signal WE is asserted LOW. The address presented to the address bus is loaded into the Address Register. The write signals are latched into the Control Logic block. The data lines are automatically tri-stated regardless of the state of the OE input signal. This allows the external logic to present the data on DQs and DQP[A:D]. On the next clock rise the data presented to DQs and DQP[A:D] (or a subset for byte write operations, see truth table for details) inputs is latched into the device and the write is complete. Additional accesses (Read/Write/Deselect) can be initiated on this cycle. The data written during the Write operation is controlled by BW[A:D] signals. The CY7C1351G provides byte write capability that is described in the truth table. Asserting the Write Enable input (WE) with the selected Byte Write Select input will selectively write to only the desired bytes. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Byte write capability has been included in order to greatly simplify Read/Modify/Write sequences, which can be reduced to simple byte write operations. Because the CY7C1351G is a common I/O device, data should not be driven into the device while the outputs are active. The Output Enable (OE) can be deasserted HIGH before presenting data to the DQs and DQP[A:D] inputs. Doing so will tri-state the output drivers. As a safety precaution, DQs and DQP[A:D].are automatically tri-stated during the data portion of a write cycle, regardless of the state of OE. Burst Write Accesses The CY7C1351G has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Write operations without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial address, as described in the Single Write Access section above. When ADV/LD is driven HIGH on the subsequent clock rise, the Chip Enables (CE1, CE2, and CE3) and WE inputs are ignored and the burst counter is incremented. The correct BW[A:D] inputs must be driven in each cycle of the burst write, in order to write the correct bytes of data. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CE1, CE2, and CE3, must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Linear Burst Address Table (MODE = GND) First Address A1, A0 00 01 10 11 Second Address A1, A0 01 10 11 00 Third Address A1, A0 10 11 00 01 Fourth Address A1, A0 11 00 01 10 Interleaved Burst Address Table (MODE = Floating or VDD) First Address A1, A0 00 01 10 11 Second Address A1, A0 01 00 11 10 Third Address A1, A0 10 11 00 01 Fourth Address A1, A0 11 10 01 00 ZZ Mode Electrical Characteristics Parameter IDDZZ tZZS tZZREC tZZI tRZZI Description Sleep mode standby current Device operation to ZZ ZZ recovery time ZZ active to sleep current ZZ inactive to exit sleep current Test Conditions ZZ > VDD − 0.2V ZZ > VDD − 0.2V ZZ < 0.2V This parameter is sampled This parameter is sampled Min. Max. 40 2tCYC 2tCYC 0 Unit mA ns ns ns ns 2tCYC Document #: 38-05513 Rev. *D Page 5 of 14 [+] [+] Feedback CY7C1351G Truth Table [2, 3, 4, 5, 6, 7, 8] Operation Deselect Cycle Deselect Cycle Deselect Cycle Continue Deselect Cycle READ Cycle (Begin Burst) READ Cycle (Continue Burst) NOP/DUMMY READ (Begin Burst) DUMMY READ (Continue Burst) WRITE Cycle (Begin Burst) WRITE Cycle (Continue Burst) NOP/WRITE ABORT (Begin Burst) WRITE ABORT (Continue Burst) IGNORE CLOCK EDGE (Stall) SLEEP MODE Address Used CE1 CE2 CE3 ZZ ADV/LD WE BWX OE CEN CLK None H X X L L X X X L L->H None None None External Next External Next External Next None Next Current None X X X L X L X L X L X X X X L X H X H X H X H X X X H X X L X L X L X L X X X L L L L L L L L L L L L H L L H L H L H L H L H X X X X X H X H X L X L X X X X X X X X X X L L H H X X X X X L L H H X X X X X X L L L L L L L L L L L H X L->H L->H L->H DQ Tri-State Tri-State Tri-State Tri-State L->H Data Out (Q) L->H Data Out (Q) L->H L->H L->H L->H L->H L->H L->H X Tri-State Tri-State Data In (D) Data In (D) Tri-State Tri-State – Tri-State Partial Truth Table for Read/Write [2, 3, 9] Function Read Read Write – No bytes written Write Byte A – (DQA and DQPA) Write Byte B – (DQB and DQPB) Write Byte C – (DQC and DQPC) Write Byte D – (DQD and DQPD) Write All Bytes WE H H L L L L L L BWA X X H L H H H L BWB X X H H L H H L BWC X X H H H L H L BWD X X H H H H L L Notes: 2. X = Don’t Care.” H = Logic HIGH, L = Logic LOW. BWx = L signifies at least one Byte Write Select is active, BWx = Valid signifies that the desired byte write selects are asserted, see truth table for details. 3. Write is defined by BWX, and WE. See truth table for Read/Write. 4. When a write cycle is detected, all I/Os are tri-stated, even during byte writes. 5. The DQs and DQP[A:D] pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 6. CEN = H, inserts wait states. 7. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE. 8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle DQs and DQP[A:D] = tri-state when OE is inactive or when the device is deselected, and DQs and DQP[A:D] = data when OE is active. 9. Table only lists a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write will be done based on which byte write is active. Document #: 38-05513 Rev. *D Page 6 of 14 [+] [+] Feedback CY7C1351G Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD DC Voltage Applied to Outputs in tri-state ............................................ –0.5V to VDDQ + 0.5V Range Commercial Industrial DC Input Voltage ................................... –0.5V to VDD + 0.5V Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015) Latch-up Current.................................................... > 200 mA Operating Range Ambient Temperature (TA) 0°C to +70°C −40°C to +85°C VDD VDDQ 3.3V –5%/+10% 2.5V –5% to VDD Electrical Characteristics Over the Operating Range [10,11] Parameter VDD VDDQ VOH VOL VIH VIL IX Description Power Supply Voltage I/O Supply Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input HIGH Voltage Input LOW Voltage[10] Input LOW Voltage[10] Input Leakage Current except ZZ and MODE Input Current of MODE Input Current of ZZ IOZ IDD ISB1 Output Leakage Current VDD Operating Supply Current for 3.3V I/O for 2.5V I/O for 3.3V I/O, IOH = -4.0 mA for 2.5V I/O, IOH = -1.0 mA for 3.3V I/O, IOL= 8.0 mA for 2.5V I/O, IOL= 1.0 mA for 3.3V I/O for 2.5V I/O for 3.3V I/O for 2.5V I/O GND < VI < VDDQ Input = VSS Input = VDD Input = VSS Input = VDD GND < VI < VDDQ, Output Disabled VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC 7.5-ns cycle, 133 MHz 10-ns cycle, 100 MHz –5 –5 30 5 225 205 90 80 40 2.0 1.7 –0.3 –0.3 −5 –30 5 Test Conditions Min. 3.135 3.135 2.375 2.4 2.0 0.4 0.4 VDD + 0.3V VDD + 0.3V 0.8 0.7 5 Max. 3.6 VDD 2.625 Unit V V V V V V V V V V V µA µA µA µA µA µA mA mA mA mA mA Automatic CE Power-down VDD = Max, Device Deselected, 7.5-ns cycle, 133 MHz Current—TTL Inputs VIN > VIH or VIN ≤ VIL, f = fMAX, 10-ns cycle, 100 MHz inputs switching Automatic CE Power-down VDD = Max, Device Deselected, All speeds Current—CMOS Inputs VIN > VDD – 0.3V or VIN < 0.3V, f = 0, inputs static Automatic CE Power-down VDD = Max, Device Deselected, 7.5-ns cycle, 133 MHz Current—CMOS Inputs VIN > VDDQ – 0.3V or VIN < 0.3V, 10-ns cycle, 100 MHz f = fMAX, inputs switching Automatic CE Power-down VDD = Max, Device Deselected, All speeds Current—TTL Inputs VIN > VIH or V IN < VIL, f = 0, inputs static ISB2 ISB3 75 65 45 mA mA mA ISB4 Notes: 10. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC)> –2V (Pulse width less than tCYC/2). 11. TPower-up: Assumes a linear ramp from 0V to VDD (min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD. Document #: 38-05513 Rev. *D Page 7 of 14 [+] [+] Feedback CY7C1351G Capacitance[12] Parameter CIN CCLOCK CI/O Description Input Capacitance Clock Input Capacitance I/O Capacitance Test Conditions TA = 25°C, f = 1 MHz, VDD = 3.3V VDDQ=3.3V 100 TQFP Max. 5 5 5 119 BGA Max. 5 5 7 Unit pF pF pF Thermal Resistance[12] Parameters ΘJA ΘJC Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 100 TQFP Package 30.32 6.85 119 BGA Package 34.1 14.0 Unit °C/W °C/W AC Test Loads and Waveforms 3.3V I/O Test Load OUTPUT Z0 = 50Ω 3.3V OUTPUT RL = 50Ω 5 pF R = 351Ω R = 317Ω ALL INPUT PULSES VDDQ 10% GND ≤ 1ns 90% 90% 10% ≤ 1ns VT = 1.5V (a) 2.5V I/O Test Load OUTPUT Z0 = 50Ω 2.5V INCLUDING JIG AND SCOPE (b) (c) R = 1667Ω VDDQ 10% 5 pF GND R = 1538Ω ≤ 1ns ALL INPUT PULSES 90% 90% 10% ≤ 1ns OUTPUT RL = 50Ω VT = 1.25V (a) INCLUDING JIG AND SCOPE (b) (c) Note: 12. Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05513 Rev. *D Page 8 of 14 [+] [+] Feedback CY7C1351G Switching Characteristics Over the Operating Range[17, 18] –133 Parameter tPOWER Clock tCYC tCH tCL Output Times tCDV tDOH tCLZ tCHZ tOEV tOELZ tOEHZ Set-up Times tAS tALS tWES tCENS tDS tCES Hold Times tAH tALH tWEH tCENH tDH tCEH Address Hold After CLK Rise ADV/LD Hold after CLK Rise WE, BWX Hold After CLK Rise CEN Hold After CLK Rise Data Input Hold After CLK Rise Chip Enable Hold After CLK Rise 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns ns ns ns ns Address Set-up Before CLK Rise ADV/LD Set-up Before CLK Rise WE, BWX Set-Up Before CLK Rise CEN Set-up Before CLK Rise Data Input Set-up Before CLK Rise Chip Enable Set-Up Before CLK Rise 1.5 1.5 1.5 1.5 1.5 1.5 2.0 2.0 2.0 2.0 2.0 2.0 ns ns ns ns ns ns Data Output Valid After CLK Rise Data Output Hold After CLK Rise Clock to Low-Z [14, 15, 16] –100 Min. 1 10 4.0 4.0 6.5 8.0 2.0 0 3.5 3.5 3.5 3.5 0 3.5 3.5 Max. Unit ms ns ns ns ns ns ns ns ns ns ns Description VDD(Typical) to the first Access Clock Cycle Time Clock HIGH Clock LOW [13] Min. 1 7.5 2.5 2.5 Max. 2.0 0 Clock to High-Z14, 15, 16] OE LOW to Output Valid OE LOW to Output OE HIGH to Output Low-Z[14, 15, 16] High-Z[14, 15, 16] 0 Notes: 13. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD minimum initially before a read or write operation can be initiated. 14. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage. 15. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve tri-state prior to Low-Z under the same system conditions. 16. This parameter is sampled and not 100% tested. 17. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V. 18. Test conditions shown in (a) of AC Test Loads, unless otherwise noted. Document #: 38-05513 Rev. *D Page 9 of 14 [+] Feedback CY7C1351G Switching Waveforms Read/Write Waveforms[19, 20, 21] 1 CLK tCENS tCENH 2 tCYC 3 4 5 6 7 8 9 10 tCH tCL CEN tCES tCEH CE ADV/LD WE BW[A:D] ADDRESS tAS A1 tAH A2 A3 tCDV tCLZ A4 tDOH Q(A3) Q(A4) tOEHZ tOEV A5 tCHZ A6 A7 DQ tDS D(A1) tDH D(A2) D(A2+1) Q(A4+1) D(A5) Q(A6) D(A7) OE COMMAND WRITE D(A1) WRITE D(A2) BURST WRITE D(A2+1) READ Q(A3) READ Q(A4) BURST READ Q(A4+1) tOELZ tDOH WRITE D(A5) READ Q(A6) WRITE D(A7) DESELECT DON’T CARE UNDEFINED Notes: 19. For this waveform ZZ is tied LOW. 20. When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH. 21. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional. Document #: 38-05513 Rev. *D Page 10 of 14 [+] [+] Feedback CY7C1351G Switching Waveforms (continued) NOP, STALL and DESELECT Cycles[19, 20, 22] 1 CLK CEN CE ADV/LD WE BW[A:D] ADDRESS DQ COMMAND WRITE D(A1) 2 3 4 5 6 7 8 9 10 A1 A2 D(A1) READ Q(A2) STALL A3 Q(A2) READ Q(A3) A4 Q(A3) WRITE D(A4) STALL A5 tCHZ D(A4) NOP READ Q(A5) Q(A5) tDOH DESELECT CONTINUE DESELECT DON’T CARE UNDEFINED ZZ Mode Timing[23,24] CLK t ZZ t ZZREC ZZ t ZZI I SUPPLY I DDZZ t RZZI DESELECT or READ Only ALL INPUTS (except ZZ) Outputs (Q) High-Z DON’T CARE Notes: 22. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrates CEN being used to create a pause. A write is not performed during this cycle. 23. Device must be deselected when entering ZZ mode. See truth table for all possible signal conditions to deselect the device. 24. DQs are in high-Z when exiting ZZ sleep mode. Document #: 38-05513 Rev. *D Page 11 of 14 [+] [+] Feedback CY7C1351G Ordering Information Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit www.cypress.com for actual products offered. Speed (MHz) 133 Ordering Code CY7C1351G-133AXC CY7C1351G-133BGC CY7C1351G-133BGXC CY7C1351G-133AXI CY7C1351G-133BGI CY7C1351G-133BGXI 100 CY7C1351G-100AXC CY7C1351G-100BGC CY7C1351G-100BGXC CY7C1351G-100AXI CY7C1351G-100BGI CY7C1351G-100BGXI Package Diagram Part and Package Type Operating Range Commercial 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free 51-85050 100-Pin Thin Quad Flat Pack (14 x 20 x 1.4 mm) Lead-Free 51-85115 119-ball Ball Grid Array (14 x 22 x 2.4 mm) 119-ball Ball Grid Array (14 x 22 x 2.4 mm) Lead-Free lndustrial Commercial lndustrial Package Diagrams 100-pin TQFP (14 x 20 x 1.4 mm) (51-85050) 16.00±0.20 14.00±0.10 100 1 81 80 1.40±0.05 0.30±0.08 22.00±0.20 20.00±0.10 0.65 TYP. 30 31 50 51 12°±1° (8X) SEE DETAIL A 0.20 MAX. 1.60 MAX. 0° MIN. SEATING PLANE 0.25 GAUGE PLANE STAND-OFF 0.05 MIN. 0.15 MAX. NOTE: 1. JEDEC STD REF MS-026 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH MOLD PROTRUSION/END FLASH SHALL NOT EXCEED 0.0098 in (0.25 mm) PER SIDE BODY LENGTH DIMENSIONS ARE MAX PLASTIC BODY SIZE INCLUDING MOLD MISMATCH 3. DIMENSIONS IN MILLIMETERS 0°-7° R 0.08 MIN. 0.20 MAX. 0.60±0.15 0.20 MIN. 1.00 REF. DETAIL 51-85050-*B A Document #: 38-05513 Rev. *D 0.10 R 0.08 MIN. 0.20 MAX. Page 12 of 14 [+] [+] Feedback CY7C1351G Package Diagrams (continued) 119-ball BGA (14 x 22 x 2.4 mm) (51-85115) 51-85115-*B ZBT is a trademark of Integrated Device Technology, Inc. NoBL and No Bus Latency are trademarks of Cypress Semiconductor. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05513 Rev. *D Page 13 of 14 © Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. [+] [+] Feedback CY7C1351G Document History Page Document Title: CY7C1351G 4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture Document Number: 38-05513 REV. ** *A ECN NO. 224360 276690 Issue Date See ECN See ECN Orig. of Change RKF VBL New data sheet Description of Change Deleted 66 MHz Changed TQFP package in Ordering Information section to lead-free TQFP Added comment of availability of BG lead-free package Removed 117-MHz speed bin Modified Address Expansion balls in the pinouts for 100 TQFP and 119 BGA Packages as per JEDEC standards and updated the Pin Definitions accordingly Modified VOL, VOH test conditions Replaced ‘Snooze’ with ‘Sleep’ Replaced TBD’s for ΘJA and ΘJC to their respective values on the Thermal Resistance table Changed the package name for 100 TQFP from A100RA to A101 Updated the Ordering Information by shading and unshading MPNs as per availability Converted from Preliminary to Final Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Modified Typo in VOH test condition from “for 3.3V I/O” to “for 3.3V I/O, IOH = –4.0 mA” and from “for 2.5V I/O” to “for 2.5V I/O, IOH = –1.0 mA” in the Electrical Characteristics Table Modified Typo in VOL test condition for 3.3V I/O from “IOH = –4.0 mA” to “IOH = 8.0 mA” and for 2.5V I/O from “IOH = –1.0 mA” to “IOH = 1.0 mA” in the Electrical Characteristics Table Modified Typo in the test condition for VIH from “for 3.3V I/O, IOH = 8.0 mA” to “for 3.3V I/O” and from “for 2.5V I/O, IOH =1.0 mA” to “for 2.5V I/O” in the Electrical Characteristics Table Modified Typo in IX Input Load Current test condition from “for 3.3V” to “GND ≤ VI ≤ VDDQ” and IX Input Current of Mode test condition from “for 2.5V I/O and “GND ≤ VI ≤ VDDQ” to Input = VSS and Input = VDD respectively in the Electrical Characteristics Table Modified Typo in ISB4 from “VIN ≥ VDDQ – 0.3V or VIN ≤ 0.3V” to “VIN ≥ VIH or VIN ≤ VIL” in the Electrical Characteristics Table Added VDDQ for 3.3V I/O in the Electrical Characteristics Table Modified test condition from VDDQ < VDD to VDDQ < VDD Modified “Input Load” to “Input Leakage Current except ZZ and MODE” in the Electrical Characteristics Table Replaced Package Name column with Package Diagram in the Ordering Information table Replaced Package Diagram of 51-85050 from *A to *B Updated the Ordering Information Added the Maximum Rating for Supply Voltage on VDDQ Relative to GND. Updated the Ordering Information table. *B 333626 See ECN SYT *C 418633 See ECN RXU *D 480124 See ECN VKN Document #: 38-05513 Rev. *D Page 14 of 14 [+] [+] Feedback