CY7C1352B-166AC

PRELIMINARY CY7C1352B 256K x18 Pipelined SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT™ devices MCM63Z818 and MT55L256L18P • Supports 166-MHz bus operations with zero wait states — Data is transferred on every clock • Internally self-timed output buffer control to eliminate the need to use OE • Fully registered (inputs and outputs) for pipelined operation • Byte Write Capability • 256K x 18 common I/O architecture • Single 3.3V power supply • Fast clock-to-output times — 3.5 ns (for 166-MHz device) — 3.8 ns (for 150-MHz device) — 4.0 ns (for 143-MHz device) — 4.2 ns (for 133-MHz device) — 5.0 ns (for 100-MHz device) — 7.0 ns (for 80-MHz device) • Clock Enable (CEN) pin to suspend operation • Synchronous self-timed writes • Asynchronous output enable • JEDEC-standard 100-pin TQFP package • Burst Capability—linear or interleaved burst order • Low standby power Functional Description The CY7C1352B is a 3.3V 256K by 18 synchronous-pipelined Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1352B is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of the SRAM, especially in systems that require frequent Read/Write transitions. The CY7C1352B is pin/functionally compatible to ZBT SRAMs MCM63Z819 and MT55L256L18P. All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 3.5 ns (166-MHz device). Write operations are controlled by the four Byte Write Select (BWS[1:0]) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence. 18 Logic Block Diagram CLK CE ADV/LD A[17:0] CEN CE 1 CE2 CE3 WE BWS [1:0] Mode 18 CONTROL and WRITE LOGIC 18 256Kx18 MEMORY ARRAY 18 D Data-In REG. Q 18 CLK OUTPUT REGISTERS and LOGIC 18 DQ[15:0] DP[1:0] OE . Selection Guide -166 Maximum Access Time (ns) Maximum Operating Current (mA) Shaded areas contain advance information. NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology. -150 3.8 375 5 -143 4.0 350 5 -133 4.2 300 5 -100 5.0 250 5 -80 7.0 200 5 3.5 Commercial 400 5 Maximum CMOS Standby Current (mA) Commercial Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 May 26, 2000 PRELIMINARY Pin Configuration 100-Pin TQFP CY7C1352B A6 A7 CE1 CE2 NC NC BWS1 BWS0 CE3 VDD VSS CLK WE CEN OE ADV/LD NC NC NC NC NC VDDQ VSS NC NC DQ8 DQ9 VSS VDDQ DQ10 DQ11 VDDQ VDD VDD VSS DQ12 DQ13 VDDQ VSS DQ14 DQ15 DP1 NC VSS VDDQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 A8 A9 CY7C1352B 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A17 NC NC VDDQ VSS NC DP0 DQ7 DQ6 VSS VDDQ DQ5 DQ4 VSS VDD VDD VSS DQ3 DQ2 VDDQ VSS DQ1 DQ0 NC NC VSS VDDQ NC NC NC MODE A5 A4 A3 A2 A1 A0 DNU DNU VSS VDD 2 DNU DNU A10 A11 A12 A13 A14 A15 A16 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 PRELIMINARY Pin Definitions Pin Number Name 80, 50−44, 81− A[17:0] 82, 99− 100, 32−37 94, 93 BWS[1:0] I/O InputSynchronous InputSynchronous InputSynchronous InputSynchronous CY7C1352B Description Address Inputs used to select one of the 262,144 address locations. Sampled at the rising edge of the CLK. Byte Write Select Inputs, active LOW. Qualified with WE to conduct writes to the SRAM. Sampled on the rising edge of CLK. BWS0 controls DQ[7:0] and DP0, BWS1 controls DQ[15:8] and DP1. See Write Cycle Description table for details. Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This signal must be asserted LOW to initiate a write sequence. Advance/Load Input used to advance the on-chip address counter or load a new address. When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address can be loaded into the device for an access. After being deselected, ADV/LD should be driven LOW in order to load a new address. Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK is only recognized if CEN is active LOW. Chip Enable 1 Input active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3 to select/deselect the device. Chip Enable 2 Input active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. Output Enable, active LOW. Combined with the synchronous logic block inside the device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state, when the device has been deselected. Clock Enable Input, active LOW. When asserted LOW the clock signal is recognized by the SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not deselect the device, CEN can be used to extend the previous cycle when required. Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by A[16:0] during the previous clock rise of the read cycle. The direction of the pins is controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave as outputs. When HIGH, DQ [15:0] are placed in a three-state condition. The outputs are automatically three-stated during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. Bidirectional Data Parity I/O lines. Functionally, these signals are identical to DQ [15:0]. During write sequences, DP0 is controlled by BWS0 and DP 1 is controlled by BWS1 Mode input. Selects the burst order of the device. Tied HIGH selects the interleaved burst order. Pulled LOW selects the linear burst order. MODE should not change states during operation. When left floating, MODE will default HIGH to an interleaved burst order. Power supply inputs to the core of the device. Should be connected to 3.3V power supply. Power supply for the I/O circuitry. Should be connected to a 3.3V power supply. 88 85 WE ADV/LD 89 98 97 92 86 CLK CE1 CE2 CE3 OE Input-Clock InputSynchronous InputSynchronous InputSynchronous InputAsynchronous 87 CEN InputSynchronous 23−22, 19−18, 13−12, 9−8, 73−72, 69−68, 63−62, 59−58 DQ[15:0] I/OSynchronous 24, 74 DP[1:0] I/OSynchronous Input Strap pin 31 MODE 15, 16, 41, 65, 66, 91 4, 11, 14, 20, 27, 54, 61, 70, 77 5, 10, 17, 21, 26, 40, 55, 60, 64, 67, 71, 76, 90 VDD VDDQ Power Supply I/O Power Supply Ground VSS Ground for the device. Should be connected to ground of the system. 3 PRELIMINARY Pin Definitions (continued) Pin Number Name 1−3, 6−7, 25, NC 28−30, 51−53, 56−57, 75, 78− 79, 95−96 83, 84 NC 38, 39, 42, 43 DNU I/O - CY7C1352B Description No Connects. These pins are not connected to the internal device. - No Connects. Reserved for address inputs for depth expansion. Pin 83 is reserved for 512K depth and pin 84 is reserved for 1-Mb depth devices. Do Not Use pins. These pins should be left floating or tied to VSS. Burst Read Accesses The CY7C1352B has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Reads without reasserting the address inputs. ADV/LD must be driven LOW in order to load a new address into the SRAM, as described in the Single Read Access section above. The sequence of the burst counter is determined by the MODE input signal. A LOW input on MODE selects a linear burst mode, a HIGH selects an interleaved burst sequence. Both burst counters use A0 and A1 in the burst sequence, and will wrap-around when incremented sufficiently. A HIGH input on ADV/LD will increment the internal burst counter regardless of the state of chip enables inputs or WE. WE is latched at the beginning of a burst cycle. Therefore, the type of access (Read or Write) is maintained throughout the burst sequence. Single Write Accesses Write accesses are initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, and (3) the write signal WE is asserted LOW. The address presented to A0−A17 is loaded into the Address Register. The write signals are latched into the Control Logic block. On the subsequent clock rise the data lines are automatically three-stated regardless of the state of the OE input signal. This allows the external logic to present the data on DQ[15:0] and DP [1:0]. In addition, the address for the subsequent access (Read/Write/Deselect) is latched into the Address Register (provided the appropriate control signals are asserted). On the next clock rise the data presented to DQ[15:0] and DP [1:0] (or a subset for byte write operations, see Write Cycle Description table for details) inputs is latched into the device and the write is complete. The data written during the Write operation is controlled by BWS[1:0] signals. The CY7C1352B provides byte write capability that is described in the write cycle description table. Asserting the Write Enable input (WE) with the selected Byte Write Select (BWS[1:0]) input will selectively write to only the desired bytes. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Byte write capability has been included in order to greatly simplify Read/Modify/Write sequences, which can be reduced to simple byte write operations. Because the CY7C1352B is a common I/O device, data should not be driven into the device while the outputs are active. The Output Enable (OE) can be deasserted HIGH before presenting data to the DQ[15:0] and DP[1:0] inputs. Doing so will threestate the output drivers. As a safety precaution, DQ [15:0] and DP [1:0] are automatically three-stated during the data portion of a write cycle, regardless of the state of OE. Introduction Functional Overview The CY7C1352B is a synchronous-pipelined Burst SRAM designed specifically to eliminate wait states during Write-Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock signal is qualified with the Clock Enable input signal (CEN). If CEN is HIGH, the clock signal is not recognized and all internal states are maintained. All synchronous operations are qualified with CEN. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 3.5 ns (166-MHz device). Accesses can be initiated by asserting all three chip enables (CE1, CE2, CE3) active at the rising edge of the clock. If Clock Enable (CEN) is active LOW and ADV/LD is asserted LOW, the address presented to the device will be latched. The access can either be a read or write operation, depending on the status of the Write Enable (WE). BWS[1:0] can be used to conduct byte write operations. Write operations are qualified by the Write Enable (WE). All writes are simplified with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE 2, CE 3) and an asynchronous Output Enable (OE) simplify depth expansion. All operations (Reads, Writes, and Deselects) are pipelined. ADV/LD should be driven LOW once the device has been deselected in order to load a new address for the next operation. Single Read Accesses A read access is initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, (3) the Write Enable input signal WE is deasserted HIGH, and (4) ADV/LD is asserted LOW. The address presented to the address inputs (A 0−A17) is latched into the Address Register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the rising edge of the next clock the requested data is allowed to propagate through the output register and onto the data bus within 3.5 ns (166-MHz device) provided OE is active LOW. After the first clock of the read access the output buffers are controlled by OE and the internal control logic. OE must be driven LOW in order for the device to drive out the requested data. During the second clock, a subsequent operation (Read/Write/Deselect) can be initiated. Deselecting the device is also pipelined. Therefore, when the SRAM is deselected at clock rise by one of the chip enable signals, its output will three-state following the next clock rise. 4 PRELIMINARY Burst Write Accesses The CY7C1352B has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Write operations without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial address, as described in the Single Write Access section above. CY7C1352B When ADV/LD is driven HIGH on the subsequent clock rise, the chip enables (CE1, CE2, and CE3) and WE inputs are ignored and the burst counter is incremented. The correct BWS[1:0] inputs must be driven in each cycle of the burst write in order to write the correct bytes of data. Cycle Description Truth Table[1, 2, 3, 4, 5, 6] Operation Deselected Suspend Begin Read Begin Write Burst READ Operation Address used External External External Internal CE 1 X 0 0 X CEN 0 1 0 0 0 ADV/ LD/ L X 0 0 1 WE X X 1 0 X BWSx X X X Valid X CLK L-H L-H L-H L-H L-H Comments I/Os three-state following next recognized clock. Clock ignored, all operations suspended. Address latched. Address latched, data presented two valid clocks later. Burst Read operation. Previous access was a Read operation. Addresses incremented internally in conjunction with the state of MODE. Burst Write operation. Previous access was a Write operation. Addresses incremented internally in conjunction with the state of MODE. Bytes written are determined by BWS[1:0]. Burst WRITE Operation Internal X 0 1 X Valid L-H Interleaved Burst Sequence First Address Ax+1, Ax 00 01 10 11 Second Address Ax+1, Ax 01 00 11 10 Third Address Ax+1, Ax 10 11 00 01 Fourth Address Ax+1, Ax 11 10 01 00 Linear Burst Sequence First Address Ax+1, Ax 00 01 10 11 Second Address Ax+1, Ax 01 10 11 00 Third Address Ax+1, Ax 10 11 00 01 Fourth Address Ax+1, Ax 11 00 01 10 Write Cycle Descriptions[1, 2] Function Read Write − No bytes written Write Byte 0 − (DQ[7:0] and DP0) Write Byte 1 − (DQ[15:8] and DP 1) Write All Bytes WE 1 0 0 0 0 BWS 1 X 1 1 0 0 BWS0 X 1 0 1 0 Notes: 1. X=”Don't Care”, 1=Logic HIGH, 0=Logic LOW, CE stands for ALL Chip Enables active. BWSx = 0 signifies at least one Byte Write Select is active, BWSx = Valid signifies that the desired byte write selects are asserted, see Write Cycle Description table for details. 2. Write is defined by WE and BWS[1:0]. See Write Cycle Description table for details. 3. The DQ and DP pins are controlled by the current cycle and the OE signal. 4. CEN=1 inserts wait states. 5. Device will power-up deselected and the I/Os in a three-state condition, regardless of OE. 6. OE assumed LOW. 5 PRELIMINARY Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ..................................... −65°C to +150°C Ambient Temperature with Power Applied .................................................. −55°C to +125°C Supply Voltage on VDD Relative to GND .........−0.5V to +4.6V DC Voltage Applied to Outputs in High Z State[7] .....................................−0.5V to VDDQ + 0.5V DC Input Voltage[7] ..................................−0.5V to VDDQ + 0.5V CY7C1352B Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage .......................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current .................................................... >200 mA Operating Range Range Com’l Ambient Temperature[8] 0°C to +70°C VDD/VDDQ 3.3V ± 5% Electrical Characteristics Over the Operating Range Parameter VDD VDDQ VOH VOL VIH VIL IX IOZ ICC Description Power Supply Voltage I/O Supply Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage [7] Test Conditions Min. 3.135 3.135 Max. 3.465 3.465 0.4 Unit V V V V V V µA µA µA mA mA mA mA mA mA mA mA mA mA mA mA mA VDD = Min., IOH = –4.0 mA [9] VDD = Min., IOL = 8.0 mA [9] 2.4 2.0 −0.3 VDD + 0.3V 0.8 5 30 5 400 375 350 300 250 200 90 80 70 60 50 40 5 Input Load Current Input Current of MODE GND ≤ VI ≤ VDDQ −5 −30 −5 5.0-ns cycle, 166 MHz 6.6-ns cycle, 150 MHz 7.0-ns cycle, 143 MHz 7.5-ns cycle, 133 MHz 10-ns cycle, 100 MHz 12.5-ns cycle, 80 MHz Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled VDD Operating Supply VDD = M ax., IOUT = 0 mA, f = fMAX = 1/tCYC ISB1 Automatic CE Power-Down Current—TTL Inputs Max. VDD, Device Deselected, VIN ≥ VIH or VIN ≤ VIL f = fMAX = 1/tCYC 5.0-ns cycle, 166 MHz 6.6-ns cycle, 150 MHz 7.0-ns cycle, 143 MHz 7.5-ns cycle, 133 MHz 10-ns cycle, 100 MHz 12.5-ns cycle, 80 MHz ISB2 Automatic CE PowerDown Current—CMOS Inputs Automatic CE PowerDown Current—CMOS Inputs Max. VDD, Device Deselected, VIN All speed grades ≤ 0.3V or VIN > V DDQ – 0.3V, f=0 Max. VDD, Device Deselected, or VIN ≤ 0.3V or VIN > VDDQ – 0.3V f = fMAX = 1/tCYC 5.0-ns cycle, 166 MHz 6.6-ns cycle, 150 MHz 7.0-ns cycle, 143 MHz 7.5-ns cycle, 133 MHz 10-ns cycle, 100 MHz 12.5-ns cycle, 80 MHz ISB3 80 70 60 50 40 30 mA mA mA mA mA mA Shaded areas contain advance information. Notes: 7. Minimum voltage equals –2.0V for pulse duration less than 20 ns. 8. TA is the case temperature. 9. The load used for VOH a nd VCL testing is shown in part (b) of A/C Test Loads and Waveforms. 6 PRELIMINARY Capacitance[10] Parameter CIN CCLK CI/O Description Input Capacitance Clock Input Capacitance Input/Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VDD = 3.3V. VDDQ = 3.3V Max. 4 4 4 CY7C1352B Unit pF pF pF AC Test Loads and Waveforms R=317Ω [11] OUTPUT Z0 =50Ω RL =50Ω VL = 1.5V 3.3V OUTPUT ALL INPUT PULSES 3.0V 5 pF R=351Ω GND (a) INCLUDING JIG AND SCOPE (b) 1352B-2 Thermal Resistance Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Still Air, soldered on a 4.25 x 1.125 inch, 4layer printed circuit board Symbol ΘJA ΘJC TQFP Typ. 28 4 Units °C/W °C/W Notes 10 10 Note: 10. Tested initially and after any design or process change that may affect these parameters. 11. AC test conditions assume signal transition time of 2 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading shown in (a) of AC Test Loads and Waveforms. 7 PRELIMINARY Switching Characteristics Over the Operating Range[11, 12, 13] -166 Parameter tCYC tCH tCL tAS tAH tCO tDOH tCENS tCENH tWES tWEH tALS tALH tDS tDH tCES tCEH tCHZ tCLZ tEOHZ tEOLZ tEOV Description Clock Cycle Time Clock HIGH Clock LOW Address Set-Up Before CLK Rise -150 -143 -133 -100 CY7C1352B -80 Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit 5.0 1.4 1.4 1.5 6.6 2.5 2.5 1.5 0.5 3.5 1.5 1.5 1.5 0.5 1.5 0.5 1.5 0.5 1.5 0.5 1.5 0.5 3.2 1.5 1.5 3.0 0 3.2 0 3.5 3.0 0 4.0 3.2 3.8 1.5 2.0 0.5 2.0 0.5 2.0 0.5 1.7 0.5 2.0 0.5 1.5 1.5 4.0 0 4.2 3.5 7.0 2.8 2.8 2.0 0.5 4.0 1.5 2.0 0.5 2.0 0.5 2.0 0.5 1.7 0.5 2.0 0.5 1.5 1.5 4.2 0 5.0 3.5 7.5 3.0 3.0 2.0 0.5 4.2 1.5 2.2 0.5 2.2 0.5 2.2 0.5 2.0 0.5 2.2 0.5 1.5 1.5 5.0 0 7.0 3.5 10 4.0 4.0 2.2 0.5 5.0 1.5 2.5 1.0 2.5 1.0 2.5 1.0 2.5 1.0 2.5 1.0 1.5 1.5 7.0 5.0 12.5 4.0 4.0 2.5 1.0 7.0 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Address Hold After CLK Rise 0.5 Data Output Valid After CLK Rise Data Output Hold After CLK Rise CEN Set-Up Before CLK Rise 1.5 CEN Hold After CLK Rise GW, BWS[1:0] Set-Up Before CLK Rise GW, BWS[1:0] Hold After CLK Rise ADV/LD Set-Up Before CLK Rise ADV/LD Hold after CLK Rise Data Input Set-Up Before CLK Rise Data Input Hold After CLK Rise Chip Enable Set-Up Before CLK Rise Chip Enable Hold After CLK Rise Clock to High-Z[10, 12, 13, 14] Clock to Low-Z 12, 13, 14] [10, 12, 13, 14] [10, 0.5 1.5 0.5 1.5 0.5 1.5 0.5 1.5 0.5 1.5 1.5 OE HIGH to Output High-Z OE LOW to Output Low-Z[10, 12, 13, 14] OE LOW to Output Valid[12] Shaded areas contain advance information. Notes: 12. tCHZ, tCLZ, tOEV, tEOLZ , and tEOHZ a re specified with A/C test conditions shown in part (a) of AC Test Loads and waveforms. Transition is measured ± 200 mV from steady-state voltage. 13. At any given voltage and temperature, tEOHZ is less than t EOLZ and tCHZ is less than tCLZ t o eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions. 14. This parameter is sampled and not 100% tested. 8 PRELIMINARY Switching Waveforms Read/Write/Deselect Sequence DESELECT WRITE SUSPEND READ READ CY7C1352B DESELECT CLK tCH tCL tCYC tCENS tCENH CEN tAS tAH CEN HIGH blocks all synchronous inputs RA3 RA4 WA5 RA6 RA7 ADDRESS RA1 WA2 WE & BWS[1:0] tWS tWH tCES tCEH CE tDS tDH D2 In tCHZ tDOH Q3 1a Out Q4 Out D5 In Q6 Out tCHZ Q7 Out tCLZ tDOH Q1 a 1 Out DataIn/Out Device originally deselected tCO The combination of WE & BWS[1:0] defines a write cycle (see Write Cycle Description table). CE is the combination of CE1, CE2, and CE3. All chip enables need to be active in order to select the device. Any chip enable can deselect the device. RAx stands for Read Address X, WAx stands for Write Address X, Dx stands for Data-in for location X, Qx stands for Data-out for location X. ADV/LD held LOW. OE held LOW. = DON’T CARE = UNDEFINED 9 DESELECT WRITE READ READ READ PRELIMINARY Switching Waveforms (continued) Begin Read Burst Read Burst Read CY7C1352B Burst Sequences Burst Read Begin Read Begin Write Burst Write CLK tALS tALH tCH tCL tCYC ADV/LD tAS tAH ADDRESS RA1 WA2 Burst Write Burst Write RA3 WE tWS tWH tWS tWH BWS[1:0] tCES tCEH CE tCHZ Q1+1 Out Q1+2 Out Q1+3 Out tDS tCLZ D2+1 In D2+2 In D2+3 In Q3 Out tCLZ tDOH Q1 1a Out tDH D2 In DataIn/Out Device originally deselected tCO tCO The combination of WE & BWS [1:0] defines a write cycle (see Write Cycle Description table). CE is the combination of CE1, CE2, and CE3. All chip enables need to be active in order to select the device. Any chip enable can deselect the device. RAx stands for Read Address X, WA stands for Write Address X, Dx stands for Data-in for location X, Qx stands for Data-out for location X. CEN held LOW. During burst writes, byte writes can be conducted by asserting the appropriate BWS[1:0] input signals. Burst order determined by the state of the MODE input. CEN held LOW. OE held LOW. = DON’T CARE = UNDEFINED 10 Burst Read Burst Read PRELIMINARY Switching Waveforms (continued) OE Timing CY7C1352B OE tEOHZ tEOV I/O’s Three-state tEOLZ Ordering Information Speed (MHz) 166 150 143 133 100 80 Ordering Code CY7C1352B-166AC CY7C1352B-150AC CY7C1352B-143AC CY7C1352B-133AC CY7C1352B-100AC CY7C1352B-80AC Package Name A101 A101 A101 A101 A101 A101 Package Type 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack 100-Lead (14 x 20 x 1.4 mm) Thin Quad Flat Pack Operating Range Commercial Commercial Commercial Commercial Commercial Commercial Shaded areas contain advance information. Document #: 38−00934-A 11 PRELIMINARY Package Diagram 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101 CY7C1352B 51-85050-A © Cypress Semiconductor Corporation, 2000. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.