CY7C1366B CY7C1367B
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM
Features
• Supports bus operation up to 225 MHz • Available speed grades are 225, 200 and 166 MHz • Registered inputs and outputs for pipelined operation • Optimal for performance (Double-Cycle deselect) — Depth expansion without wait state • 3.3V –5% and +10% core power supply (VDD) • 2.5V / 3.3V I/O operation • Fast clock-to-output times — 2.8 ns (for 225-MHz device) — 3.0 ns (for 200-MHz device) — 3.5 ns (for 166-MHz device) • Provide high-performance 3-1-1-1 access rate • User-selectable burst counter supporting Intel Pentium interleaved or linear burst sequences • Separate processor and controller address strobes • Synchronous self-timed writes • Asynchronous output enable • Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA and 165-Ball fBGA packages • IEEE 1149.1 JTAG-Compatible Boundary Scan • “ZZ” Sleep Mode Option
Functional Description[1]
The CY7C1366B/CY7C1367B SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depth-expansion Chip Enables (CE2 and CE3[2]), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX, and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV). Address, data inputs, and write controls are registered on-chip to initiate a self-timed Write cycle.This part supports Byte Write operations (see Pin Descriptions and Truth Table for further details). Write cycles can be one to four bytes wide as controlled by the byte write control inputs. GW active LOW causes all bytes to be written. This device incorporates an additional pipelined enable register which delays turning off the output buffers an additional cycle when a deselect is executed.This feature allows depth expansion without penalizing system performance. The CY7C1366B/CY7C1367B operates from a +3.3V core power supply while all outputs operate with a +3.3V or a +2.5V supply. All inputs and outputs are JEDEC-standard JESD8-5-compatible.
Selection Guide
225 MHz Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current 2.8 250 30 200 MHz 3.0 220 30 166 MHz 3.5 180 30 Unit ns mA mA
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts. Notes: 1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. 2. CE3 is for TQFP and 165 fBGA package only. 119 BGA is offered only in 2 Chip Enable.
Cypress Semiconductor Corporation Document #: 38-05096 Rev. *B
•
3901 North First Street
•
San Jose, CA 95134 • 408-943-2600 Revised February 23, 2004
CY7C1366B CY7C1367B
1
Logic Block Diagram – CY7C1366B (256K x 36)
A0,A1,A
ADDRESS REGISTER
2 A[1:0]
MODE ADV CLK
BURST LOGIC
Q1
COUNTER AND
CLR ADSC ADSP BWD DQD,DQPD BYTE WRITE REGISTER DQc,DQPC BYTE WRITE REGISTER DQB,DQPB BYTE WRITE REGISTER DQA,DQPA BYTE WRITE REGISTER ENABLE REGISTER
Q0
DQD,DQPD BYTE WRITE DRIVER DQc,DQPC BYTE WRITE DRIVER DQB,DQPB BYTE WRITE DRIVER DQA,DQPA BYTE WRITE DRIVER
MEMORY ARRAY SENSE AMPS
BWC
OUTPUT REGISTERS
OUTPUT BUFFERS
E
BWB
DQs DQPA DQPB DQPC DQPD
BWA BWE GW CE1 CE2 CE3 OE
PIPELINED ENABLE
INPUT REGISTERS
ZZ
SLEEP CONTROL
2
Logic Block Diagram – CY7C1367B (512K x 18)
A0, A1, A
ADDRESS REGISTER
2 A[1:0]
MODE
ADV CLK
Q1 BURST COUNTER AND LOGIC CLR Q0
ADSC ADSP DQB, DQPB BYTE WRITE REGISTER DQA , DQPA BYTE WRITE REGISTER ENABLE REGISTER DQB , DQPB BYTE WRITE DRIVER DQA, DQPA BYTE WRITE DRIVER MEMORY ARRAY SENSE AMPS
BWB
OUTPUT REGISTERS
OUTPUT BUFFERS E
DQs, DQPA DQPB
BWA BWE GW CE1 CE2 CE3 OE
PIPELINED ENABLE
INPUT REGISTERS
ZZ
SLEEP CONTROL
Document #: 38-05096 Rev. *B
Page 2 of 32
CY7C1366B CY7C1367B
Pin Configurations
100-pin TQFP Pinout (3 Chip Enables)
A A CE1 CE2 BWD BWC BWB BWA CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A A A CE1 CE2 NC NC BWB BWA CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A
DQPB DQB DQB VDDQ VSSQ DQB DQB DQB DQB VSSQ VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA DQA DQA VSSQ VDDQ DQA DQA DQPA NC NC NC VDDQ VSSQ NC NC DQB DQB VSSQ VDDQ DQB DQB NC VDD NC VSS DQB DQB VDDQ VSSQ DQB DQB DQPB NC VSSQ VDDQ NC NC NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
DQPC DQC DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD DQPD
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
CY7C1366B (256K X 36)
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
CY7C1367B (512K x 18)
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51
A NC NC VDDQ VSSQ NC DQPA DQA DQA VSSQ VDDQ DQA DQA VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA NC NC VSSQ VDDQ NC NC NC
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
MODE A A A A A1 A0 NC / 72M NC / 36M VSS VDD NC / 18M A A A A A A A A
Document #: 38-05096 Rev. *B
MODE A A A A A1 A0 NC / 72M NC / 36M VSS VDD NC / 18M A A A A A A A A
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
Page 3 of 32
CY7C1366B CY7C1367B
Pin Configurations (continued)
119-ball BGA (2 Chip Enable with JTAG)
1 A B C D E F G H J K L M N P R T U VDDQ NC NC DQC DQC VDDQ DQC DQC VDDQ DQD DQD VDDQ DQD DQD NC NC VDDQ 2 A CE2 A DQPC DQC DQC DQC DQC VDD DQD DQD DQD DQD DQPD A NC TMS CY7C1366B (256K x 36) 3 4 5 A A ADSP A A VSS VSS VSS BWC VSS NC VSS BWD VSS VSS VSS MODE A TDI ADSC VDD NC CE1 OE ADV GW VDD CLK NC BWE A1 A0 VDD A TCK A A VSS VSS VSS BWB VSS NC VSS BWA VSS VSS VSS NC A TDO 6 A A A DQPB DQB DQB DQB DQB VDD DQA DQA DQA DQA DQPA A NC NC 7 VDDQ NC NC DQB DQB VDDQ DQB DQB VDDQ DQA DQA VDDQ DQA DQA NC ZZ VDDQ
CY7C1367B (512K x 18) 1 A B C D E F G H J K L M N P R T U VDDQ NC NC DQB NC VDDQ NC DQB VDDQ NC DQB VDDQ DQB NC NC NC VDDQ 2 A CE2 A NC DQB NC DQB NC VDD DQB NC DQB NC DQPB A A TMS 3 A A A VSS VSS VSS BWB VSS NC VSS VSS VSS VSS VSS MODE A TDI 4 ADSP ADSC VDD NC CE1 OE ADV GW VDD CLK NC BWE A1 A0 VDD NC TCK 5 A A A VSS VSS VSS VSS VSS NC VSS BWA VSS VSS VSS NC A TDO 6 A A A DQPA NC DQA NC DQA VDD NC DQA NC DQA NC A A NC 7 VDDQ NC NC NC DQA VDDQ DQA NC VDDQ DQA NC VDDQ NC DQA NC ZZ VDDQ
Document #: 38-05096 Rev. *B
Page 4 of 32
CY7C1366B CY7C1367B
Pin Configurations (continued)
165-ball fBGA (3 Chip Enable)
CY7C1366B (256K x 36)
1 A B C D E F G H J K L M N P R
NC / 288M NC DQPC DQC DQC DQC DQC NC DQD DQD DQD DQD DQPD NC MODE
2
A A NC DQC DQC DQC DQC VSS DQD DQD DQD DQD NC NC / 72M NC / 36M
3
CE1 CE2 VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A
4
BWC BWD VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS
A
5
BWB BWA VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDI
TMS
6
CE3 CLK
7
BWE GW
8
ADSC OE VSS VDD
9
ADV ADSP
10
A A NC DQB DQB DQB DQB NC DQA DQA DQA DQA NC A A
11
NC NC / 144M DQPB DQB DQB DQB DQB ZZ DQA DQA DQA DQA DQPA A A
VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC / 18M A1 A0
VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDO TCK
VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A
A
VDD VDD VDD VDD VDD VDD VDD VDD VSS
A
A
A
CY7C1367B (512K x 18)
1 A B C D E F G H J K L M N P R
NC / 288M NC NC NC NC NC NC NC DQB DQB DQB DQB DQPB NC MODE
2
A A NC DQB DQB DQB DQB VSS NC NC NC NC NC NC / 72M NC / 36M
3
CE1 CE2 VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A
4
BWB NC VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS
A
5
NC BWA VSS VSS VSS VSS VSS VSS ‘VSS VSS VSS VSS NC TDI
TMS
6
CE3 CLK
7
BWE GW
8
ADSC OE
9
ADV ADSP
10
A A NC NC NC NC NC NC DQA DQA DQA DQA NC A A
11
A NC / 144M DQPA DQA DQA DQA DQA ZZ NC NC NC NC NC A A
VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC / 18M A1 A0
VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDO TCK
VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS
A
VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A
A
A
A
Document #: 38-05096 Rev. *B
Page 5 of 32
CY7C1366B CY7C1367B
CY7C1366B–Pin Definitions
Name A0, A1 , A TQFP 37,36,32,33 ,34,35,43,4 4,45,46,47, 48,49,50,81 ,82,99,100 BGA (2 Chip Enable) fBGA I/O InputSynchronous Description Address Inputs used to select one of the 256K address locations. Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 [2]are sampled active. A1: A0 are fed to the two-bit counter. Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM. Sampled on the rising edge of CLK. Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global write is conducted (ALL bytes are written, regardless of the values on BWX and BWE). Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be asserted LOW to conduct a byte write. Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3[2] to select/deselect the device. ADSP is ignored if CE1 is HIGH. Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3[2] to select/deselect the device.
R6,P6,A2, P4,N4,A2, C2,R2,3A, A10,B2,B10, B3,C3,T3, P3,P4,P8,P9, T4,A5,B5, P10,P11,R3, C5,T5,A6, R4,R8,R9, R10,R11 B6,C6,R6
BWA,BWB BWC,BWD GW
93,94,95,96 L5,G5,G3, B5,A5,A4,B4 L3 88 H4 B7
InputSynchronous InputSynchronous
BWE CLK
87
M4
A7
InputSynchronous InputClock InputSynchronous
89
K4
B6
CE1
98
E4
A3
CE2
97
B2
B3
InputSynchronous InputSynchronous
CE3[2]
92
-
A6
OE
86
F4
B8
Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device.Not connected for BGA. Where referenced, CE3[2] is assumed active throughout this document for BGA. InputOutput Enable, asynchronous input, active LOW. Asynchronous Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, DQ pins are three-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. InputSynchronous InputSynchronous Advance Input signal, sampled on the rising edge of CLK, active LOW. When asserted, it automatically increments the address in a burst cycle. Address Strobe from Processor, sampled on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH. Address Strobe from Controller, sampled on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized.
ADV
83
G4
A9
ADSP
84
A4
B9
ADSC
85
B4
A8
InputSynchronous
Document #: 38-05096 Rev. *B
Page 6 of 32
CY7C1366B CY7C1367B
CY7C1366B–Pin Definitions (continued)
Name ZZ TQFP 64 BGA (2 Chip Enable) T7 fBGA H11 I/O Description
InputZZ “sleep” Input, active HIGH. When asserted HIGH Asynchronous places the device in a non-time-critical “sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down. I/OSynchronous Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX are placed in a three-state condition.
DQs, DQPs 52,53,56,57 ,58,59,62,6 3,68,69,72, 73,74,75, 78,79,2,3,6, 7,8,9, 12,13,18,19 ,22,23,24,2 5,28,29,51, 80,1,30
K6,L6,M6, N6,K7,L7, N7,P7,E6, F6,G6,H6, D7,E7,G7, H7,D1,E1, G1,H1,E2, F2,G2,H2, K1,L1,N1, P1,K2,L2, M2,N2,P6, D6,D2,P2
M11,L11,K11, J11,J10,K10, L10,M10,D10 ,E10,F10,G10 ,D11,E11,F11, G11,D1,E1, F1,G1,D2,E2, F2,G2,J1,K1, L1,M1,J2,K2, L2,M2,N11, C11,C1,N1
VDD
15,41,65,91 J2,C4,J4,R D4,D8,E4,E8, 4,J6 F4,F8,G4,G8, H4,H8,J4,J8, K4,K8,L4,L8, M4,M8 17,40,67,90 D3,E3,F3, H3,K3,M3, N3,P3,D5, E5,F5,H5, K5,M5,N5, P5 C4,C5,C6,C7, C8,D5,D6,D7, E5,E6,E7,F5, F6,F7,G5,G6, G7,H2,H5,H6 ,H7,J5,J6,J7, K5,K6,K7,L5, L6,L7,M5,M6, M7,N4,N8 –
Power Supply Power supply inputs to the core of the device.
VSS
Ground
Ground for the core of the device.
VSSQ VDDQ
5,10,21,26, 55,60,71,76
–
I/O Ground
Ground for the I/O circuitry.
4,11,20,27, A1,F1,J1, C3,C9,D3,D9, I/O Power Sup- Power supply for the I/O circuitry. 54,61,70,77 M1,U1,A7, E3,E9,F3,F9, ply F7,J7,M7, G3,G9,J3,J9, U7 K3,K9,L3,L9, M3,M9,N3,N9 31 R3 R1 InputStatic Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation. Mode Pin has an internal pull-up. Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG feature is not being utilized, this pin should be disconnected. This pin is not available on TQFP packages. Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages.
MODE
TDO
–
U5
P7
JTAG serial output Synchronous JTAG serial input Synchronous JTAG serial input Synchronous
TDI
–
U3
P5
TMS
–
U2
R5
Document #: 38-05096 Rev. *B
Page 7 of 32
CY7C1366B CY7C1367B
CY7C1366B–Pin Definitions (continued)
Name TCK TQFP – BGA (2 Chip Enable) U4 fBGA R7 I/O JTAG-Clock Description Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must be connected to VSS. This pin is not available on TQFP packages. No Connects. Not internally connected to the die
NC
14,16,66, 42,39,38
B1,C1,R1, A11,B1,C2, T1,T2,J3, C10,H1,H3, D4,L4,5J, H9,H10,N2, 5R,6T,6U, N5,N7,N10, B7,C7,R7 P1,A1,B11,P2 ,R2,N6
–
CY7C1367B–Pin Definitions
Name A0, A1 , A TQFP 37,36,32,33, 34,35,43,44, 45,46,47,48, 49,50,80,81, 82,99,100 BGA (2-Chip Enable) fBGA I/O InputSynchronous Description Address Inputs used to select one of the 512K address locations. Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2, and CE3[2] are sampled active. A1: A0 are fed to the two-bit counter.
P4,N4,A2, R6,P6,A2, C2,R2,T2, A10,A11,B2, A3,B3,C3, B10,P3,P4, T3,A5,B5, P8,P9,P10, C5,T5,A6, P11,R3,R4, B6,C6,R6, R8,R9,R10, R11 T6 G3,L5 B5,A4
BWA,BWB
93,94
InputSynchronous InputSynchronous
Byte Write Select Inputs, active LOW. Qualified with BWE to conduct byte writes to the SRAM. Sampled on the rising edge of CLK. Global Write Enable Input, active LOW. When asserted LOW on the rising edge of CLK, a global write is conducted (ALL bytes are written, regardless of the values on BWX and BWE). Byte Write Enable Input, active LOW. Sampled on the rising edge of CLK. This signal must be asserted LOW to conduct a byte write. Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 and CE3[2] to select/deselect the device. ADSP is ignored if CE1 is HIGH. Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3[2] to select/deselect the device. Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. Not connected for BGA. Where referenced, CE3[2] is assumed active throughout this document for BGA.
GW
88
H4
B7
BWE
87
M4
A7
InputSynchronous InputClock InputSynchronous
CLK
89
K4
B6
CE1
98
E4
A3
CE2
97
B2
B3
InputSynchronous InputSynchronous
CE3 [2]
92
–
A6
OE
86
F4
B8
InputOutput Enable, asynchronous input, active LOW. Asynchronous Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, DQ pins are three-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. Page 8 of 32
Document #: 38-05096 Rev. *B
CY7C1366B CY7C1367B
CY7C1367B–Pin Definitions (continued)
Name ADV TQFP 83 BGA (2-Chip Enable) G4 fBGA A9 I/O InputSynchronous InputSynchronous Description Advance Input signal, sampled on the rising edge of CLK, active LOW. When asserted, it automatically increments the address in a burst cycle. Address Strobe from Processor, sampled on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH. Address Strobe from Controller, sampled on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized.
ADSP
84
A4
B9
ADSC
85
P4
A8
InputSynchronous
ZZ
64
T7
H11
InputZZ “sleep” Input, active HIGH. When asserted HIGH Asynchronous places the device in a non-time-critical “sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down. I/OSynchronous Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX are placed in a three-state condition.
DQs, DQPs 58,59,62,63, 68,69,72,73, 8,9,12,13,18 ,19,22,23,74 ,24
P7,K7,G7, J10,K10,L10, E7,F6,H6, M10,D11, L6,N6,D1, E11,F11,G11 H1,L1,N1, ,J1,K1,L1,M1 E2,G2,K2, ,D2,E2,F2, M2,D6,P2 G2,C11,N1
VDD
15,41,65,91
C4,J2,J4, D4,D8,E4,E8 Power Supply Power supply inputs to the core of the device. J6,R4 ,F4,F8,G4, G8,H4,H8,J4 ,J8,K4,K8,L4 ,L8,M4,M8 H2,C4,C5,C6 ,C7,C8,D5, D6,D7,E5,E6 ,E7,F5,F6,F7 ,G5,G6,G7, H5,H6,H7,J5 ,J6,J7,K5,K6, K7,L5,L6,L7, M5,M6,M7, N4,N8 – Ground Ground for the core of the device.
VSS
17,40,67,90 D3,D5,E5, E3,F3,F5, G5,H3,H5, K3,K5,L3, M3,M5,N3, N5,P3,P5
VSSQ
5,10,21,26, 55,60,71,76
–
I/O Ground
Ground for the I/O circuitry.
Document #: 38-05096 Rev. *B
Page 9 of 32
CY7C1366B CY7C1367B
CY7C1367B–Pin Definitions (continued)
Name VDDQ TQFP BGA (2-Chip Enable) fBGA I/O I/O Power Supply Description Power supply for the I/O circuitry.
4,11,20,27, A1,A7,F1, C3,C9,D3, 54,61,70,77 F7,J1,J7, D9,E3,E9, M1,M7,U1, F3,F9,G3, U7 G9,J3,J9,K3, K9,L3,L9,M3, M9,N3,N9 31 R3 R1
MODE
InputStatic
Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation. Mode Pin has an internal pull-up. Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG feature is not being utilized, this pin should be left unconnected. This pin is not available on TQFP packages. Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not being utilized, this pin can be left floating or connected to VDD through a pull up resistor. This pin is not available on TQFP packages. Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must be connected to VSS. This pin is not available on TQFP packages. No Connects. Not internally connected to the die.
TDO
–
U5
P7
JTAG serial output Synchronous JTAG serial input Synchronous
TDI
–
U3
P5
TMS
–
U2
R5
JTAG serial input Synchronous JTAGClock –
TCK
–
U4
R7
NC
1,2,3,6,7,14, 16,25,28,29, 30,38,39,42, 51,52,53,56, 57,66,75,78, 79,95,96
B1,B7,C1, C7,D2,D4, D7,E1,E6, H2,F2,G1, G6,H7,J3, J5,K1,K6, L4,L2,L7, M6,N2,L7, P1,P6,R1, R5,R7,T1, T4,U6
A5,B1,B4,C1 ,C2,C10,D1, D10,E1,E10, F1,F10,G1, G10,H1,H3, H9,H10,J2, J11,K2,K11, L2,L1,M2, M11,N2,N10, N5,N7,N11, P1,A1,B11, P2,R2,N6
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CY7C1366B CY7C1367B
Functional Overview
All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The CY7C1366B/CY7C1367B supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486 processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BWX) inputs. A Global Write Enable (GW) overrides all byte write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed write circuitry. Synchronous Chip Selects CE1, CE2, CE3[2] and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. ADSP is ignored if CE1 is HIGH. Single Read Accesses This access is initiated when the following conditions are satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2) chip selects are all asserted active, and (3) the write signals (GW, BWE) are all deasserted HIGH. ADSP is ignored if CE1 is HIGH. The address presented to the address inputs is stored into the address advancement logic and the Address Register while being presented to the memory core. The corresponding data is allowed to propagate to the input of the Output Registers. At the rising edge of the next clock the data is allowed to propagate through the output register and onto the data bus within tco if OE is active LOW. The only exception occurs when the SRAM is emerging from a deselected state to a selected state, its outputs are always three-stated during the first cycle of the access. After the first cycle of the access, the outputs are controlled by the OE signal. Consecutive single read cycles are supported. The CY7C1366B/CY7C1367B is a double-cycle deselect part. Once the SRAM is deselected at clock rise by the chip select and either ADSP or ADSC signals, its output will three-state immediately after the next clock rise. Single Write Accesses Initiated by ADSP This access is initiated when both of the following conditions are satisfied at clock rise: (1) ADSP is asserted LOW, and (2) chip select is asserted active. The address presented is loaded into the address register and the address advancement logic while being delivered to the memory core. The write signals (GW, BWE, and BWX) and ADV inputs are ignored during this first cycle. ADSP triggered write accesses require two clock cycles to complete. If GW is asserted LOW on the second clock rise, the data presented to the DQx inputs is written into the corresponding address location in the memory core. If GW is HIGH, then the write operation is controlled by BWE and BWX signals. The CY7C1366B/CY7C1367B provides byte write capability that is described in the Write Cycle Description table. Asserting the Byte Write Enable input (BWE) with the selected Byte Write input will selectively write to only the desired bytes. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Because the CY7C1366B/CY7C1367B is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQ inputs. Doing so will three-state the output drivers. As a safety precaution, DQ are automatically three-stated whenever a write cycle is detected, regardless of the state of OE. Single Write Accesses Initiated by ADSC ADSC write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted HIGH, (3) chip select is asserted active, and (4) the appropriate combination of the write inputs (GW, BWE, and BWX) are asserted active to conduct a write to the desired byte(s). ADSC triggered write accesses require a single clock cycle to complete. The address presented is loaded into the address register and the address advancement logic while being delivered to the memory core. The ADV input is ignored during this cycle. If a global write is conducted, the data presented to the DQX is written into the corresponding address location in the memory core. If a byte write is conducted, only the selected bytes are written. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed write mechanism has been provided to simplify the write operations. Because the CY7C1366B/CY7C1367B is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQX inputs. Doing so will three-state the output drivers. As a safety precaution, DQX are automatically three-stated whenever a write cycle is detected, regardless of the state of OE.
Burst Sequences
The CY7C1366B/CY7C1367BCY7C1367B provides a two-bit wraparound counter, fed by A[1:0], that implements either an interleaved or linear burst sequence. The interleaved burst sequence is designed specifically to support Intel® Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence. The burst sequence is user selectable through the MODE input. Both read and write burst operations are supported. Asserting ADV LOW at clock rise will automatically increment the burst counter to the next address in the burst sequence. Both read and write burst operations are supported.
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CY7C1366B CY7C1367B
Interleaved Burst Address Table (MODE = Floating or VDD)
First Address A1: A0 00 01 10 11 Second Address A1: A0 01 00 11 10 Third Address A1: A0 10 11 00 01 Fourth Address A1: A0 11 10 01 00
Linear Burst Address Table (MODE = GND)
First Address A1: A0 00 01 10 11 Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CEs, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Test Conditions ZZ > VDD – 0.2V ZZ > VDD – 0.2V ZZ < 0.2V This parameter is sampled This parameter is sampled 0 2tCYC 2tCYC Min. Max. 35 2tCYC Unit mA ns ns ns ns Second Address A1: A0 01 10 11 00 Third Address A1: A0 10 11 00 01 Fourth Address A1: A0 11 00 01 10
ZZ Mode Electrical Characteristics
Parameter IDDZZ tZZS tZZREC tZZI tRZZI Description Snooze mode standby current Device operation to ZZ ZZ recovery time ZZ Active to snooze current ZZ Inactive to exit snooze current
Truth Table[ 3, 4, 5, 6, 7, 8]
Operation Deselect Cycle,Power-down Deselect Cycle,Power-down Deselect Cycle,Power-down Deselect Cycle,Power-down Deselect Cycle,Power-down Snooze Mode,Power-down READ Cycle, Begin Burst READ Cycle, Begin Burst WRITE Cycle, Begin Burst READ Cycle, Begin Burst READ Cycle, Begin Burst READ Cycle, Continue Burst READ Cycle, Continue Burst Add. Used None None None None None None External External External External External Next Next CE1 H L L L L X L L L L L X X CE2 X L X L X X H H H H H X X CE3 X X H X H X L L L L L X X ZZ L L L L L H L L L L L L L ADSP X L L H H X L L H H H H H ADSC L X X L L X X X L L L H H ADV X X X X X X X X X X X L L WRITE OE CLK DQ X X L-H three-state X X X X X X X L H H H H X X X X X L H X L H L H L-H three-state L-H three-state L-H three-state L-H three-state X L-H L-H L-H L-H three-state Q D Q Q
L-H three-state
L-H three-state L-H three-state
Notes: 3. X = “Don't Care.” H = Logic HIGH, L = Logic LOW. 4. WRITE = L when any one or more Byte Write enable signals and BWE = L or GW= L. WRITE = H when all Byte write enable signals , BWE, GW = H. 5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 6. CE1, CE2, and CE3 are available only in the TQFP package. BGA package has only 2 chip selects CE1 and CE2. 7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is a don't care for the remainder of the write cycle 8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are three-state when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW). 9. Table only lists a partial listing of the byte write combinations. Any Combination of BWX is valid Appropriate write will be done based on which byte write is active.
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CY7C1366B CY7C1367B
Truth Table[ 3, 4, 5, 6, 7, 8]
Operation READ Cycle, Continue Burst READ Cycle, Continue Burst WRITE Cycle,Continue Burst WRITE Cycle,Continue Burst READ Cycle, Suspend Burst READ Cycle, Suspend Burst READ Cycle, Suspend Burst READ Cycle, Suspend Burst WRITE Cycle,Suspend Burst WRITE Cycle,Suspend Burst Add. Used Next Next Next Next Current Current Current Current Current Current CE1 H H X H X X H H X H CE2 X X X X X X X X X X CE3 X X X X X X X X X X ZZ L L L L L L L L L L ADSP X X H X H H X X H X ADSC H H H H H H H H H H ADV L L L L H H H H H H WRITE OE CLK H L L-H H L L H H H H L L H X X L H L H X X L-H L-H L-H L-H L-H L-H DQ Q D D Q Q D D
L-H three-state
L-H three-state L-H three-state
Partial Truth Table for Read/Write[5, 9]
Function (CY7C1366B) Read Read Write Byte A – ( DQA and DQPA ) Write Byte B – ( DQB and DQPB ) Write Bytes B, A Write Byte C – ( DQC and DQPC ) Write Bytes C, A Write Bytes C, B Write Bytes C, B, A Write Byte D – ( DQD and DQPD ) Write Bytes D, A Write Bytes D, B Write Bytes D, B, A Write Bytes D, C Write Bytes D, C, A Write Bytes D, C, B Write All Bytes Write All Bytes GW H H H H H H H H H H H H H H H H H L BWE H L L L L L L L L L L L L L L L L X BWD X H H H H H H H H L L L L L L L L X BWC X H H H H L L L L H H H H L L L L X BWB X H H L L H H L L H H L L H H L L X BWA X H L H L H L H L H L H L H L H L X
Truth Table for Read/Write[5]
Function (CY7C1367B) Read Read Write Byte A – ( DQA and DQPA ) Write Byte B – ( DQB and DQPB ) Write All Bytes Write All Bytes GW H H H H H L BWE H L L L L X BWB X H H L L X BWA X H L H L X
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CY7C1366B CY7C1367B
IEEE 1149.1 Serial Boundary Scan (JTAG)
The CY7C1366B/CY7C1367B incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM. Note that the TAP controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant TAPs. The TAP operates using JEDEC-standard 3.3V or 2.5V I/O logic levels. The CY7C1366B/CY7C1367B contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull-up resistor. TDO should be left unconnected. Upon power-up, the device will come up in a reset state which will not interfere with the operation of the device. Test MODE SELECT (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. It is allowable to leave this ball unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI ball is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see Figure . TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register. (See Tap Controller Block Diagram.) Test Data-Out (TDO) The TDO output ball is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. (See Tap Controller State Diagram.)
TAP Controller Block Diagram
0 Bypass Register
210
TAP Controller State Diagram
1 TEST-LOGIC RESET 0 0 RUN-TEST/ IDLE 1 SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT-DR 1 EXIT1-DR 0 PAUSE-DR 1 0 EXIT2-DR 1 UPDATE-DR 1 0 0 0 1 0 1 1 SELECT IR-SCAN 0 CAPTURE-IR 0 SHIFT-IR 1 EXIT1-IR 0 PAUSE-IR 1 EXIT2-IR 1 UPDATE-IR 1 0 0 1 0 1
TDI
Selection Circuitry
Instruction Register
31 30 29 . . . 2 1 0
Selection Circuitry
TDO
Identification Register
x. . . . .210
Boundary Scan Register
TCK TMS TAP CONTROLLER
Performing a Tap Reset A RESET is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power-up, the TAP is reset internally to ensure that TDO comes up in a High-Z state. Tap Registers Registers are connected between the TDI and TDO balls and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK.
The 0/1 next to each state represents the value of TMS at the rising edge of TCK. Test Access Port (TAP) Test Clock (TCK) The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK.
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CY7C1366B CY7C1367B
Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the Tap Controller Block Diagram. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test data path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all the input and bidirectional balls on the SRAM. The SRAM has a 71-bit-long register. The boundary scan register is loaded with the contents of the RAM I/O ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the I/O ring. The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in the Identification Register Definitions table. TAP Instruction Set Overview Eight different instructions are possible with the three bit instruction register. All combinations are listed in the Instruction Codes table. Three of these instructions are listed as RESERVED and should not be used. The other five instructions are described in detail below. The TAP controller used in this SRAM is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. The TAP controller cannot be used to load address data or control signals into the SRAM and cannot preload the I/O buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE/PRELOAD; rather, it performs a capture of the I/O ring when these instructions are executed. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction once it is shifted in, the TAP controller needs to be moved into the Update-IR state. EXTEST EXTEST is a mandatory 1149.1 instruction which is to be executed whenever the instruction register is loaded with all 0s. EXTEST is not implemented in this SRAM TAP controller, and therefore this device is not compliant to 1149.1. The TAP controller does recognize an all-0 instruction. When an EXTEST instruction is loaded into the instruction register, the SRAM responds as if a SAMPLE/PRELOAD instruction has been loaded. There is one difference between the two instructions. Unlike the SAMPLE/PRELOAD instruction, EXTEST places the SRAM outputs in a High-Z state. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO balls when the TAP controller is in a Shift-DR state. It also places all SRAM outputs into a High-Z state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The PRELOAD portion of this instruction is not implemented, so the device TAP controller is not fully 1149.1 compliant. When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 10 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To guarantee that the boundary scan register will capture the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold time (tCS plus tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still
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CY7C1366B CY7C1367B
possible to capture all other signals and simply ignore the value of the CLK captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO balls. Note that since the PRELOAD part of the command is not implemented, putting the TAP to the Update-DR state while performing a SAMPLE/PRELOAD instruction will have the same effect as the Pause-DR command. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO balls. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions.
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CY7C1366B CY7C1367B
TAP Timing
1 Test Clock (TCK)
t TMSS
2
3
4
5
6
t TH t TMSH
t TL
t CYC
Test Mode Select (TMS)
t TDIS t TDIH
Test Data-In (TDI)
t TDOV t TDOX
Test Data-Out (TDO) DON’T CARE UNDEFINED
TAP AC Switching Characteristics Over the operating Range[10, 11]
Parameter Clock TCK Clock Cycle Time TCK Clock Frequency TCK Clock HIGH time TCK Clock LOW time Output Times TCK Clock LOW to TDO Valid TCK Clock LOW to TDO Invalid Setup Times TMS Set-Up to TCK Clock Rise TDI Set-Up to TCK Clock Rise Capture Set-Up to TCK Rise Hold Times TMS hold after TCK Clock Rise TDI Hold after Clock Rise Capture Hold after Clock Rise tTMSH tTDIH tCH 5 5 5 ns ns ns tTMSS tTDIS tCS 5 5 5 ns ns tTDOV tTDOX 0 5 ns ns tTCYC tTF tTH tTL 25 25 50 20 ns MHz ns ns Symbol Min Max Unit
Notes: 10. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 11. Test conditions are specified using the load in TAP AC test Conditions. tR/tF = 1ns.
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CY7C1366B CY7C1367B
3.3V TAP AC Test Conditions
Input pulse levels ....... ........................................VSS to 3.3V Input rise and fall times ...................... ..............................1ns Input timing reference levels ...........................................1.5V Output reference levels...................................................1.5V Test load termination supply voltage...............................1.5V
2.5V TAP AC Test Conditions
Input pulse levels ........................................ VSS to 2.5V Input rise and fall time ......................................................1ns Input timing reference levels................... ......................1.25V Output reference levels .................. ..............................1.25V Test load termination supply voltage .................... ........1.25V
3.3V TAP AC Output Load Equivalent
1.5V 50Ω TDO Z O= 50Ω 20pF
2.5V TAP AC Output Load Equivalent
1.25V 50Ω TDO Z O= 50Ω 20pF
otherwise noted)[12] Parameter VOH1 VOH2 VOL1 VOL2 VIH VIL IX
TAP DC Electrical Characteristics And Operating Conditions (0°C < TA < +70°C; VDD = 3.3V ±0.165V unless
Description Output HIGH Voltage Output HIGH Voltage Output LOW Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Load Current GND < VIN < VDDQ IOH = –4.0 mA IOH = –1.0 mA IOH = –100 µA IOL = 8.0 mA IOL = 8.0 mA IOL = 100 µA Conditions VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V VDDQ = 2.5V 2.0 1.7 –0.5 –0.3 –5 Min. 2.4 2.0 2.9 2.1 0.4 0.4 0.2 0.2 VDD + 0.3 VDD + 0.3 0.7 0.7 5 Max. Unit V V V V V V V V V V V V µA
Identification Register Definitions
Instruction Field Revision Number (31:29) Device Depth (28:24) Device Width (23:18) Cypress Device ID (17:12) Cypress JEDEC ID Code (11:1) ID Register Presence Indicator (0)
Note: 12. All voltages referenced to VSS (GND).
Cy7c1366B (256K x36) 001 01010 000000 100110 00000110100 1
Cy7c1367B (512K x18) 001 01010 000000 010110 00000110100 1
Description Describes the version number. Reserved for Internal Use Defines memory type and architecture Defines width and density Allows unique identification of SRAM vendor. Indicates the presence of an ID register.
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CY7C1366B CY7C1367B
Scan Register Sizes
Register Name Instruction Bypass ID Boundary Scan Order Bit Size (x36) 3 1 32 71 Bit Size (x18) 3 1 32 71
Identification Codes
INSTRUCTION EXTEST IDCODE SAMPLE Z RESERVED SAMPLE/PRELOAD CODE 000 001 010 011 100 DESCRIPTION Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM outputs to High-Z state. This instruction is not 1149.1-compliant. Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operations. Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. Do Not Use: This instruction is reserved for future use. Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does not affect SRAM operation. This instruction does not implement 1149.1 preload function and is therefore not 1149.1-compliant. Do Not Use: This instruction is reserved for future use. Do Not Use: This instruction is reserved for future use. Places the bypass register between TDI and TDO. This operation does not affect SRAM operations.
RESERVED RESERVED BYPASS
101 110 111
119-Ball BGA Boundary Scan Order
CY7C1366B (256K x 36) BIT# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 BALL ID K4 H4 M4 F4 B4 A4 G4 C3 B3 D6 H7 G6 E6 D7 E7 F6 G7 H6 Signal Name CLK GW BWE OE ADSC ADSP ADV A A DQPB DQB DQB DQB DQB DQB DQB DQB DQB BIT# 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 BALL ID P4 N4 R6 T5 T3 R2 R3 P2 P1 L2 K1 N2 N1 M2 L1 K2 Internal H1 Signal Name A0 A1 A A A A MODE DQPD DQD DQD DQD DQD DQD DQD DQD DQD Internal DQC BIT# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 BALL ID K4 H4 M4 F4 B4 A4 G4 C3 B3 T2 Internal Internal Internal D6 E7 F6 G7 H6 CY7C1367B (512K x 18) Signal Name CLK GW BWE OE ADSC ADSP ADV A A A Internal Internal Internal DQPA DQA DQA DQA DQA BIT# 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 BALL ID P4 N4 R6 T5 T3 R2 R3 Internal Internal Internal Internal P2 N1 M2 L1 K2 Internal H1 Signal Name A0 A1 A A A A MODE Internal Internal Internal Internal DQPB DQB DQB DQB DQB Internal DQB Page 19 of 32
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CY7C1366B CY7C1367B
119-Ball BGA Boundary Scan Order (continued)
CY7C1366B (256K x 36) BIT# 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 BALL ID T7 K7 L6 N6 P7 N7 M6 L7 K6 P6 T4 A3 C5 B5 A5 C6 A6 B6 Signal Name ZZ DQA DQA DQA DQA DQA DQA DQA DQA DQPA A A A A A A A A BIT# 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 BALL ID G2 E2 D1 H2 G1 F2 E1 D2 C2 A2 E4 B2 L3 G3 G5 L5 Internal Signal Name DQC DQC DQC DQC DQC DQC DQC DQPC A A CE1 CE2 BWD BWC BWB BWA Internal BIT# 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 BALL ID T7 K7 L6 N6 P7 Internal Internal Internal Internal Internal T6 A3 C5 B5 A5 C6 A6 B6 CY7C1367B (512K x 18) Signal Name ZZ DQA DQA DQA DQA Internal Internal Internal Internal Internal A A A A A A A A BIT# 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 BALL ID G2 E2 D1 Internal Internal Internal Internal Internal C2 A2 E4 B2 Internal Internal G3 L5 Internal Signal Name DQB DQB DQB Internal Internal Internal Internal Internal A A CE1 CE2 Internal Internal BWB BWA Internal
165-Ball fBGA Boundary Scan Order
CY7C1366B (256K x 36) BIT# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 BALL ID B6 B7 A7 B8 A8 B9 A9 B10 A10 C11 E10 F10 G10 D10 D11 E11 F11 Signal Name CLK GW BWE OE ADSC ADSP ADV A A DQPB DQB DQB DQB DQB DQB DQB DQB BIT# 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 BALL ID R6 P6 R4 P4 R3 P3 R1 N1 L2 K2 J2 M2 M1 L1 K1 J1 Internal Signal Name A0 A1 A A A A MODE DQPD DQD DQD DQD DQD DQD DQD DQD DQD Internal BIT# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 BALL ID B6 B7 A7 B8 A8 B9 A9 B10 A10 A11 Internal Internal Internal C11 D11 E11 F11 CY7C1367B (512K x 18) Signal Name CLK GW BWE OE ADSC ADSP ADV A A A Internal Internal Internal DQPA DQA DQA DQA BIT# 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 BALL ID R6 P6 R4 P4 R3 P3 R1 Internal Internal Internal Internal N1 M1 L1 K1 J1 Internal Signal Name A0 A1 A A A A MODE Internal Internal Internal Internal DQPB DQB DQB DQB DQB Internal
Document #: 38-05096 Rev. *B
Page 20 of 32
CY7C1366B CY7C1367B
165-Ball fBGA Boundary Scan Order (continued)
CY7C1366B (256K x 36) BIT# 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 BALL ID G11 H11 J10 K10 L10 M10 J11 K11 L11 M11 N11 R11 R10 P10 R9 P9 R8 P8 P11 Signal Name DQB ZZ DQA DQA DQA DQA DQA DQA DQA DQA DQPA A A A A A A A A BIT# 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 BALL ID G2 F2 E2 D2 G1 F1 E1 D1 C1 B2 A2 A3 B3 B4 A4 A5 B5 A6 Signal Name DQC DQC DQC DQC DQC DQC DQC DQC DQPC A A CE1 CE2 BWD BWC BWB BWA CE3 BIT# 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 BALL ID G11 H11 J10 K10 L10 M10 Internal Internal Internal Internal Internal R11 R10 P10 R9 P9 R8 P8 P11 CY7C1367B (512K x 18) Signal Name DQA ZZ DQA DQA DQA DQA Internal Internal Internal Internal Internal A A A A A A A A BIT# 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 BALL ID G2 F2 E2 D2 Internal Internal Internal Internal Internal B2 A2 A3 B3 Internal Internal A4 B5 A6 Signal Name DQB DQB DQB DQB Internal Internal Internal Internal Internal A A CE1 CE2 Internal Internal BWB BWA CE3
Document #: 38-05096 Rev. *B
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CY7C1366B CY7C1367B
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V DC Voltage Applied to Outputs in three-state ....................................... –0.5V to VDDQ + 0.5V DC Input Voltage....................................–0.5V to VDD + 0.5V Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... >200 mA
Operating Range
Ambient Range Temperature VDD VDDQ Commercial 0°C to +70°C 3.3V – 5%/+10% 2.5V – 5% to VDD Industrial -40°C to +85°C
[13, 14]
Electrical Characteristics Over the Operating Range
Parameter VDD VDDQ VOH VOL VIH VIL IX Description Power Supply Voltage I/O Supply Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage[13] Input LOW Voltage[13] Input Load Current except ZZ and MODE VDDQ = 3.3V VDDQ = 2.5V
Test Conditions
Min. 3.135 3.135 2.375 2.4 2.0
Max. 3.6 VDD 2.625
Unit V V V V V
VDDQ = 3.3V, VDD = Min., IOH = –4.0 mA VDDQ = 2.5V, VDD = Min., IOH= –1.0 mA VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA VDDQ = 2.5V, VDD = Min., IOL = 1.0 mA VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V VDDQ = 2.5V GND ≤ VI ≤ VDDQ
0.4 0.4 2.0 1.7 –0.3 –0.3 –5 –30 5 –5 30 –5 5 250 220 180 50 VDD + 0.3V VDD + 0.3V 0.8 0.7 5
V V V V V V µA µA µA µA µA µA mA mA mA mA
Input Current of MODE Input = VSS Input = VDD Input Current of ZZ IOZ IDD Input = VSS Input = VDD Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled VDD Operating Supply Current Automatic CE Power-down Current—TTL Inputs VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC VDD = Max, Device Deselected, VIN ≥ VIH or VIN ≤ VIL f = fMAX = 1/tCYC 4.4-ns cycle, 225 MHz 5-ns cycle, 200 MHz 6-ns cycle, 166 MHz ISB1 ISB2 ISB3 ISB4 All speeds
Automatic CE VDD = Max, Device Deselected, Power-down VIN ≤ 0.3V or VIN > VDDQ – 0.3V, Current—CMOS Inputs f = 0
All speeds
30
mA
VDD = Max, Device Deselected, or All speeds Automatic CE Power-down VIN ≤ 0.3V or VIN > VDDQ – 0.3V Current—CMOS Inputs f = fMAX = 1/tCYC Automatic CE VDD = Max, Device Deselected, All Speeds Power-down VIN ≥ VIH or VIN ≤ VIL, f = 0 Current—TTL Inputs
50
mA
40
mA
Shaded areas contain advance information. Notes: 13. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > -2V (Pulse width less than tCYC/2). 14. TPower-up: Assumes a linear ramp from 0v to VDD(min.) within 200ms. During this time VIH < VDD and VDDQ < VDD\
Document #: 38-05096 Rev. *B
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CY7C1366B CY7C1367B
Thermal Resistance[15]
Parameter Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedence, per EIA / JESD51. TQFP Package 25 9 BGA Package 25 6 fBGA Package 27 6 Unit °C/W °C/W
ΘJA ΘJC
Capacitance[15]
Parameter CIN CCLK CI/O Description Input Capacitance Clock Input Capacitance Input/Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VDD = 3.3V. VDDQ = 2.5V TQFP Package 5 5 5 BGA Package 5 5 7 fBGA Package 5 5 7 Unit pF pF pF
AC Test Loads and Waveforms
3.3V I/O Test Load
OUTPUT Z0 = 50Ω 3.3V OUTPUT RL = 50Ω R = 317Ω VDD 5 pF GND R = 351Ω 10% ALL INPUT PULSES 90% 90% 10% ≤ 1ns
VL = 1.5V
≤ 1ns
2.5V I/O Test Load
OUTPUT Z0 = 50Ω
(a)
INCLUDING JIG AND SCOPE 2.5V OUTPUT RL = 50Ω
(b)
R = 1667Ω VDD
(c)
ALL INPUT PULSES 10% 90% 90% 10% ≤ 1ns
5 pF
GND R =1538Ω
VL = 1.25V
≤ 1ns
(a)
INCLUDING JIG AND SCOPE
(b)
(c)
Note: 15. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05096 Rev. *B
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CY7C1366B CY7C1367B
Switching Characteristics Over the Operating Range[20, 21]
225 MHz Parameter tPOWER Clock tCYC tCH tCL Output Times tCO tDOH tCLZ tCHZ tOEV tOELZ tOEHZ Set-up Times tAS tADS tADVS tWES tDS tCES Hold Times tAH tADH tADVH tWEH tDH tCEH Address Hold After CLK Rise ADSP , ADSC Hold After CLK Rise ADV Hold After CLK Rise GW,BWE, BWX Hold After CLK Rise Data Input Hold After CLK Rise Chip Enable Hold After CLK Rise 0.4 0.4 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns ns ns ns ns Address Set-up Before CLK Rise ADSC, ADSP Set-up Before CLK Rise ADV Set-up Before CLK Rise GW, BWE, BWX Set-up Before CLK Rise Data Input Set-up Before CLK Rise Chip Enable Set-Up Before CLK Rise 1.4 1.4 1.4 1.4 1.4 1.4 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 ns ns ns ns ns ns Data Output Valid After CLK Rise Data Output Hold After CLK Rise Clock to Low-Z[17, 18, 19] Clock to High-Z[17, 18, 19] OE LOW to Output Valid OE LOW to Output Low-Z[17, 18, 19] OE HIGH to Output High-Z
[17, 18, 19]
200 MHz Min. 1 5.0 2.0 2.0 Max
166 MHz Min. 1 6.0 2.4 2.4 Max Unit ms ns ns ns 3.5 1.25 1.25 ns ns ns 3.5 3.5 0 3.5 ns ns ns ns
Description VDD(Typical) to the first Access[16] Clock Cycle Time Clock HIGH Clock LOW
Min. 1 4.4 1.8 1.8
Max
2.8 1.25 1.25 1.25 0 2.8 2.8 2.8 0 1.25 1.25 1.25
3.0
3.0 3.0 3.0
1.25
Shaded areas contain advance information. Notes: 16. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD( minimum) initially before a read or write operation can be initiated. 17. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage. 18. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions 19. This parameter is sampled and not 100% tested. 20. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V. 21. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
Document #: 38-05096 Rev. *B
Page 24 of 32
CY7C1366B CY7C1367B
Switching Waveforms
Read Cycle Timing[22]
tCYC
CLK
tCH tADS tADH tCL
ADSP
tADS tADH
ADSC
tAS tAH
ADDRESS
A1
tWES tWEH
A2
A3 Burst continued with new base address
GW, BWE,BW
X tCES tCEH
Deselect cycle
CE
tADVS tADVH
ADV ADV suspends burst OE
tOEV t CLZ t OEHZ t OELZ tCO tDOH t CHZ
Data Out (DQ)
High-Z
Q(A1)
t CO
Q(A2)
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
Q(A3)
Single READ
BURST READ
Burst wraps around to its initial state
DON’T CARE
UNDEFINED
Notes: 22. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
Document #: 38-05096 Rev. *B
Page 25 of 32
CY7C1366B CY7C1367B
Switching Waveforms (continued)
Write Cycle Timing[22, 23]
t CYC
CLK
tCH tADS tADH tCL
ADSP
tADS tADH
ADSC extends burst
tADS tADH
ADSC
tAS tAH
ADDRESS
A1
A2
Byte write signals are ignored for first cycle when ADSP initiates burst
A3
tWES tWEH
BWE, BWX
tWES tWEH
GW
tCES tCEH
CE
tADVS tADVH
ADV
ADV suspends burst
OE
t DS t DH
Data in (D)
High-Z
t OEHZ
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
Data Out (Q)
BURST READ
Single WRITE
BURST WRITE DON’T CARE UNDEFINED
Extended BURST WRITE
Note: 23. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BWX LOW.
Document #: 38-05096 Rev. *B
Page 26 of 32
CY7C1366B CY7C1367B
Switching Waveforms (continued)
Read/Write Cycle Timing[22, 24, 25]
tCYC
CLK
tCH tADS tADH tCL
ADSP
ADSC
tAS tAH
ADDRESS BWE, BWX
A1
A2
A3
tWES tWEH
A4
A5
A6
tCES
tCEH
CE
ADV
OE
tCO tDS tDH tOELZ
Data In (D) Data Out (Q)
High-Z
tCLZ
tOEHZ
D(A3)
D(A5)
D(A6)
High-Z
Q(A1) Back-to-Back READs
Q(A2) Single WRITE DON’T CARE
Q(A4)
Q(A4+1) BURST READ
Q(A4+2)
Q(A4+3) Back-to-Back WRITEs
UNDEFINED
Notes: 24. The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC. 25. GW is HIGH.
Document #: 38-05096 Rev. *B
Page 27 of 32
CY7C1366B CY7C1367B
Switching Waveforms (continued)
ZZ Mode Timing [26, 27]
CLK
t ZZ t ZZREC
ZZ
t ZZI
I
SUPPLY I DDZZ t RZZI DESELECT or READ Only
ALL INPUTS (except ZZ)
Outputs (Q)
High-Z
DON’T CARE
Ordering Information
Speed (MHz) 225 Ordering Code CY7C1366B-225AC CY7C1367B-225AC CY7C1366B-225AI CY7C1367B-225AI CY7C1366B-225BGC CY7C1367B-225BGC CY7C1366B-225BGI CY7C1367B-225BGI CY7C1366B-225BZC CY7C1367B-225BZC CY7C1366B-225BZI CY7C1367B-225BZI 200 CY7C1366B-200AC CY7C1367B-200AC CY7C1366B-200AI CY7C1367B-200AI CY7C1366B-200BGC CY7C1367B-200BGC CY7C1366B-200BGI CY7C1367B-200BGI CY7C1366B-200BZC CY7C1367B-200BZC CY7C1366B-200BZI CY7C1367B-200BZI
Notes: 26. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 27. DQs are in high-Z when exiting ZZ sleep mode.
Package Name A101
Part and Package Type 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 3 Chip Enables
Operating Range Commercial Industrial
BG119
119-ball (14 x 22 x 2.4 mm) BGA 2 Chip Enables with Commercial JTAG Industrial
BB165A
165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.2mm) Commercial 3 Chip Enables with JTAG Industrial
A101
100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 3 Chip Enables
Commercial Industrial
BG119
119-ball (14 x 22 x 2.4 mm) BGA 2 Chip Enables with Commercial JTAG Industrial
BB165A
165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.2mm) Commercial 3 Chip Enables with JTAG Industrial
Document #: 38-05096 Rev. *B
Page 28 of 32
CY7C1366B CY7C1367B
Ordering Information (continued)
Speed (MHz) 166 Ordering Code CY7C1366B-166AC CY7C1367B-166AC CY7C1366B-166AI CY7C1367B-166AI CY7C1366B-166BGC CY7C1367B-166BGC CY7C1366B-166BG ICY7C1367B-166BGI CY7C1366B-166BZC CY7C1367B-166BGC CY7C1366B-166BZI CY7C1367B-166BGI
Shaded areas contain advance information. Please contact your local sales representative for availability of these parts.
Package Name A101
Part and Package Type 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 3 Chip Enables
Operating Range Commercial Industrial
BG119
119-ball (14 x 22 x 2.4 mm) BGA 2 Chip Enables with JTAG
Commercial Industrial
BB165A
165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.2mm) 3 Chip Enables with JTAG
Commercial Industrial
Package Diagrams
100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101
16.00±0.20 14.00±0.10
100 1 81 80
DIMENSIONS ARE IN MILLIMETERS.
1.40±0.05
0.30±0.08
22.00±0.20
20.00±0.10
0.65 TYP.
30 31 50 51
12°±1° (8X)
SEE DETAIL
A
0.20 MAX. 1.60 MAX. STAND-OFF 0.05 MIN. 0.15 MAX.
0.10
R 0.08 MIN. 0.20 MAX.
0° MIN.
0.25 GAUGE PLANE R 0.08 MIN. 0.20 MAX.
SEATING PLANE
0°-7° 0.60±0.15
0.20 MIN. 1.00 REF.
DETAIL
A
51-85050-*A
Document #: 38-05096 Rev. *B
Page 29 of 32
CY7C1366B CY7C1367B
Package Diagrams (continued)
119-Lead PBGA (14 x 22 x 2.4 mm) BG119
51-85115-*B
Document #: 38-05096 Rev. *B
Page 30 of 32
CY7C1366B CY7C1367B
Package Diagrams (continued)
165-Ball FBGA (13 x 15 x 1.2 mm) BB165A
51-85122-*C
i486 is a trademark, and Intel and Pentium are registered trademarks of Intel Corporation. PowerPC is a trademark of IBM Corporation. All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05096 Rev. *B
Page 31 of 32
© Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY7C1366B CY7C1367B
Document History Page
Document Title: CY7C1366B/CY7C1367B 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM Document Number: 38-05096 REV. ** *A *B ECN NO. 117903 121066 206401 Issue Date 08/28/02 11/13/02 See ECN Orig. of Change RCS DSG NJY New Data Sheet Updated package drawings 51-85115 (BG 119) to *B and 51-85122 (BB165A) to *C. Removed Preliminary Status(All Pages). Updated Pin Definitions. Removed 250MHz Speed bin and added 225 MHz speed bin. Added JTAG boundary scan orders. Added BGA and fBGA packages to the capacitance table. Description of Change
Document #: 38-05096 Rev. *B
Page 32 of 32
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