CY7C1380CV25

CY7C1380CV25 CY7C1382CV25 18-Mbit (512K x 36/1M x 18) Pipelined SRAM Features • Supports bus operation up to 250 MHz • Available speed grades are 250, 225, 200,166 and 133 MHz • Registered inputs and outputs for pipelined operation • 2.5V core power supply • Fast clock-to-output times — 2.6 ns (for 250-MHz device) — 2.8 ns (for 225-MHz device) — 3.0 ns (for 200-MHz device) — 3.4 ns (for 166-MHz device) — 4.2 ns (for 133-MHz device) • Provide high-performance 3-1-1-1 access rate • User-selectable burst counter supporting Intel Pentium interleaved or linear burst sequences • Separate processor and controller address strobes • Synchronous self-timed writes • Asynchronous output enable • Single Cycle Chip Deselect • Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA and 165-Ball fBGA packages • IEEE 1149.1 JTAG-Compatible Boundary Scan • “ZZ” Sleep Mode Option Functional Description[1] The CY7C1380CV25/CY7C1382CV25 SRAM integrates 524,288 x 36 and 1,048,576 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all addresses, all data inputs, address-pipelining Chip Enable (CE1), depthexpansion Chip Enables (CE2 and CE3 [2]), Burst Control inputs (ADSC, ADSP, and ADV), Write Enables (BWX, and BWE), and Global Write (GW). Asynchronous inputs include the Output Enable (OE) and the ZZ pin. Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor (ADSP) or Address Strobe Controller (ADSC) are active. Subsequent burst addresses can be internally generated as controlled by the Advance pin (ADV). Address, data inputs, and write controls are registered on-chip to initiate a self-timed Write cycle.This part supports Byte Write operations (see Pin Descriptions and Truth Table for further details). Write cycles can be one to two or four bytes wide as controlled by the byte write control inputs. GW when active LOW causes all bytes to be written. The CY7C1380CV25/CY7C1382CV25 operates from a +2.5V core power supply. All outputs also operate with a +2.5 supply. All inputs and outputs are JEDEC-standard JESD8-5compatible. Selection Guide 250 MHz Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current 2.6 350 70 225 MHz 2.8 325 70 200 MHz 3.0 300 70 167 MHz 3.4 275 70 133 MHz 4.2 245 70 Unit ns mA mA Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts. Notes: 1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. 2. CE3, CE2 are for TQFP and 165 fBGA package only. 119 BGA is offered only in 1 Chip Enable. Cypress Semiconductor Corporation Document #: 38-05240 Rev. *C • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised May 11, 2004 CY7C1380CV25 CY7C1382CV25 1 Logic Block Diagram – CY7C1380CV25 (512K x 36) A0, A1, A ADDRESS REGISTER 2 A[1:0] MODE ADV CLK Q1 ADSC ADSP BWD DQD ,DQPD BYTE WRITE REGISTER DQC ,DQPC BYTE WRITE REGISTER DQB ,DQPB BYTE WRITE REGISTER DQA ,DQPA BYTE WRITE REGISTER BURST COUNTER CLR AND Q0 LOGIC DQD ,DQPD BYTE WRITE DRIVER DQC ,DQPC BYTE WRITE DRIVER DQB ,DQPB BYTE WRITE DRIVER DQA ,DQPA BYTE WRITE DRIVER BWC MEMORY ARRAY SENSE AMPS OUTPUT REGISTERS OUTPUT BUFFERS E BWB DQs DQPA DQPB DQPC DQPD BWA BWE GW CE1 CE2 CE3 OE ENABLE REGISTER PIPELINED ENABLE INPUT REGISTERS ZZ 2 SLEEP CONTROL Logic Block Diagram – CY7C1382CV25 (1M x 18) A0, A1, A MODE ADDRESS REGISTER 2 A[1:0] ADV CLK BURST Q1 COUNTER AND LOGIC CLR Q0 ADSC ADSP DQB,DQPB WRITE REGISTER DQB,DQPB WRITE DRIVER MEMORY ARRAY BWA BWE GW CE1 CE2 CE3 OE ENABLE REGISTER DQA,DQPA WRITE REGISTER DQA,DQPA WRITE DRIVER SENSE AMPS BWB OUTPUT REGISTERS OUTPUT BUFFERS E DQs DQPA DQPB PIPELINED ENABLE INPUT REGISTERS ZZ SLEEP CONTROL 3 Document #: 38-05240 Rev. *C Page 2 of 33 CY7C1380CV25 CY7C1382CV25 Pin Configurations 100-pin TQFP Pinout A A CE1 CE2 BWD BWC BWB BWA CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A A A CE1 CE2 NC NC BWB BWA CE3 VDD VSS CLK GW BWE OE ADSC ADSP ADV A A DQPB DQB DQB VDDQ VSSQ DQB DQB DQB DQB VSSQ VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA DQA DQA VSSQ VDDQ DQA DQA DQPA NC NC NC VDDQ VSSQ NC NC DQB DQB VSSQ VDDQ DQB DQB NC VDD NC VSS DQB DQB VDDQ VSSQ DQB DQB DQPB NC VSSQ VDDQ NC NC NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 DQPC DQC DQc VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD DQPD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 CY7C1380CV25 (512K X 36) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 CY7C1382CV25 (1M x 18) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A NC NC VDDQ VSSQ NC DQPA DQA DQA VSSQ VDDQ DQA DQA VSS NC VDD ZZ DQA DQA VDDQ VSSQ DQA DQA NC NC VSSQ VDDQ NC NC NC 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 MODE A A A A A1 A0 NC / 72M NC / 36M VSS VDD A A A A A A A A MODE A A A A A1 A0 NC / 72M NC / 36M VSS VDD A Document #: 38-05240 Rev. *C A A A A A A A A A 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 Page 3 of 33 CY7C1380CV25 CY7C1382CV25 Pin Configurations (continued) 119-ball BGA (1 Chip Enable with JTAG) 1 A B C D E F G H J K L M N P R T U VDDQ NC NC DQC DQC VDDQ DQC DQC VDDQ DQD DQD VDDQ DQD DQD NC NC VDDQ 2 A A A DQPC DQC DQC DQC DQC VDD DQD DQD DQD DQD DQPD A NC / 72M TMS CY7C1380CV25 (512K x 36) 3 4 5 A A ADSP A A VSS VSS VSS BWC VSS NC VSS BWD VSS VSS VSS MODE A TDI ADSC VDD NC CE1 OE ADV GW VDD CLK NC BWE A1 A0 VDD A TCK A A VSS VSS VSS BWB VSS NC VSS BWA VSS VSS VSS NC A TDO 6 A A A DQPB DQB DQB DQB DQB VDD DQA DQA DQA DQA DQPA A NC / 36M NC 7 VDDQ NC NC DQB DQB VDDQ DQB DQB VDDQ DQA DQA VDDQ DQA DQA NC ZZ VDDQ CY7C1382CV25 (1M x 18) 1 A B C D E F G H J K L M N P R T U VDDQ NC NC DQB NC VDDQ NC DQB VDDQ NC DQB VDDQ DQB NC NC NC / 72M VDDQ 2 A A A NC DQB NC DQB NC VDD DQB NC DQB NC DQPB A A TMS 3 A A A VSS VSS VSS BWB VSS NC VSS VSS VSS VSS VSS MODE A TDI 4 ADSP ADSC VDD NC CE1 OE ADV GW VDD CLK NC BWE A1 A0 VDD NC / 36M TCK 5 A A A VSS VSS VSS VSS VSS NC VSS BWA VSS VSS VSS NC A TDO 6 A A A DQPA NC DQA NC DQA VDD NC DQA NC DQA NC A A NC 7 VDDQ NC NC NC DQA VDDQ DQA NC VDDQ DQA NC VDDQ NC DQA NC ZZ VDDQ Document #: 38-05240 Rev. *C Page 4 of 33 CY7C1380CV25 CY7C1382CV25 Pin Configurations (continued) 165-ball fBGA CY7C1380CV25 (512K x 36) 1 A B C D E F G H J K L M N P R NC / 288M NC DQPC DQC DQC DQC DQC NC DQD DQD DQD DQD DQPD NC MODE 2 A A NC DQC DQC DQC DQC VSS DQD DQD DQD DQD NC NC / 72M NC / 36M 3 CE1 CE2 VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A 4 BWC BWD VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A 5 BWB BWA VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDI TMS 6 CE3 CLK 7 BWE GW 8 ADSC OE VSS VDD 9 ADV ADSP 10 A A NC DQB DQB DQB DQB NC DQA DQA DQA DQA NC A A 11 NC NC / 144M DQPB DQB DQB DQB DQB ZZ DQA DQA DQA DQA DQPA A A VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS A A1 A0 VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDO TCK VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A VDD VDD VDD VDD VDD VDD VDD VDD VSS A A A CY7C1382CV25 (1M x 18) 1 A B C D E F G H J K L M N P R NC / 288M NC NC NC NC NC NC NC DQB DQB DQB DQB DQPB NC MODE 2 A A NC DQB DQB DQB DQB VSS NC NC NC NC NC NC / 72M NC / 36M 3 CE1 CE2 VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A 4 BWB NC VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A 5 NC BWA VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDI TMS 6 CE3 CLK 7 BWE GW 8 ADSC OE 9 ADV ADSP 10 A A NC NC NC NC NC NC DQA DQA DQA DQA NC A A 11 A NC / 144M DQPA DQA DQA DQA DQA ZZ NC NC NC NC NC A A VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS A A1 A0 VSS VSS VSS VSS VSS VSS VSS VSS VSS VSS NC TDO TCK VSS VDD VDD VDD VDD VDD VDD VDD VDD VDD VSS A VDDQ VDDQ VDDQ VDDQ VDDQ NC VDDQ VDDQ VDDQ VDDQ VDDQ A A A A Document #: 38-05240 Rev. *C Page 5 of 33 CY7C1380CV25 CY7C1382CV25 CY7C1380CV25–Pin Definitions Name A0, A1, A TQFP 37,36,32, 33,34,35, 42,43,44,45, 46,47,48, 49,50,81, 82,99,100 93,94,95, 96 88 BGA fBGA I/O Description InputAddress Inputs used to select one of the R6,P6,A2, P4,N4, Synchronous address locations. Sampled at the rising edge A10,B2, A2,B2, of the CLK if ADSP or ADSC is active LOW, and B10,N6,P3,P4, C2,R2, P8,P9,P10, A3,B3,C3, CE1, CE2, and CE3 [2]are sampled active. A1: A0 P11,R3,R4,R8, T3,T4,A5,B5, are fed to the two-bit counter.. R9,R10,R11 C5, T5,A6,B6,C6,R6 L5,G5, G3,L3 H4 B5,A5,A4, B4 B7 InputByte Write Select Inputs, active LOW. Synchronous Qualified with BWE to conduct byte writes to the SRAM. Sampled on the rising edge of CLK. InputGlobal Write Enable Input, active LOW. When Synchronous asserted LOW on the rising edge of CLK, a global write is conducted (ALL bytes are written, regardless of the values on BWX and BWE). InputByte Write Enable Input, active LOW. Synchronous Sampled on the rising edge of CLK. This signal must be asserted LOW to conduct a byte write. InputClock Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. BWA,BWB BWC,BWD GW BWE CLK 87 M4 A7 89 K4 B6 CE1 98 E4 A3 InputChip Enable 1 Input, active LOW. Sampled on Synchronous the rising edge of CLK. Used in conjunction with CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. InputChip Enable 2 Input, active HIGH. Sampled on Synchronous the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. InputChip Enable 3 Input, active LOW. Sampled on Synchronous the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device.Not available for AJ package version.Not connected for BGA. Where referenced, CE3 is assumed active throughout this document for BGA. InputOutput Enable, asynchronous input, active Asynchronous LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. InputAdvance Input signal, sampled on the rising Synchronous edge of CLK, active LOW. When asserted, it automatically increments the address in a burst cycle. InputAddress Strobe from Processor, sampled on Synchronous the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH. CE2[2] 97 - B3 CE3[2] 92 - A6 OE 86 F4 B8 ADV 83 G4 A9 ADSP 84 A4 B9 Document #: 38-05240 Rev. *C Page 6 of 33 CY7C1380CV25 CY7C1382CV25 CY7C1380CV25–Pin Definitions (continued) Name ADSC TQFP 85 BGA B4 fBGA A8 I/O Description InputAddress Strobe from Controller, sampled on Synchronous the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. InputZZ “sleep” Input, active HIGH. When asserted Asynchronous HIGH places the device in a non-time-critical “sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down. I/OBidirectional Data I/O lines. As inputs, they Synchronous feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX are placed in a three-state condition. ZZ 64 T7 H11 DQs, DQPs 52,53,56, 57,58,59, 62,63,68, 69,72,73, 74,75,78, 79,2,3,6,7,8,9, 12,13,18,19,22 , 23,24,25, 28,29,51, 80,1,30 K6,L6, M6,N6, K7,L7, N7,P7, E6,F6, G6,H6, D7,E7, G7,H7, D1,E1, G1,H1, E2,F2, G2,H2, K1,L1, N1,P1, K2,L2, M2,N2, P6,D6, D2,P2 J2,C4,J4,R4, J6 M11,L11, K11,J11, J10,K10, L10,M10, D10,E10, F10,G10, D11,E11, F11,G11, D1,E1,F1, G1,D2,E2,F2, G2,J1, K1,L1,M1, J2,K2,L2, M2,N11, C11,C1,N1 VDD 15,41,65, 91 D4,D8,E4,E8, Power Supply Power supply inputs to the core of the device. F4,F8, G4,G8,H4,H8, J4,J8, K4,K8,L4, L8,M4,M8 C4,C5,C6,C7, C8,D5,D6,D7, E5,E6,E7,F5, F6,F7,G5,G6, G7,H2,H5,H6, H7,J5,J6,J7, K5,K6,K7, L5,L6,L7, M5,M6,M7,N4, N8 Ground Ground for the core of the device. VSS 17,40,67, 90 D3,E3, F3,H3, K3,M3, N3,P3, D5,E5, F5,H5, K5,M5, N5,P5 VSSQ 5,10,21,26,55, 60,71, 76 - I/O Ground Ground for the I/O circuitry. Document #: 38-05240 Rev. *C Page 7 of 33 CY7C1380CV25 CY7C1382CV25 CY7C1380CV25–Pin Definitions (continued) Name VDDQ TQFP 4,11,20,27,54, 61,70, 77 BGA fBGA I/O I/O Power Supply Description Power supply for the I/O circuitry. A1,F1,J1,M1,U1, C3,C9,D3,D9, A7,F7,J7,M7,U7 E3,E9,F3,F9,G 3, G9,J3,J9, K3,K9,L3, L9,M3,M9,N3, N9 R3 R1 MODE 31 InputStatic Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation. Mode Pin has an internal pull-up. Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG feature is not being utilized, this pin should be disconnected. This pin is not available on TQFP packages. TDO - U5 P7 JTAG serial output Synchronous TDI - U3 P5 JTAG serial Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not input Synchronous being utilized, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. JTAG serial Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not input Synchronous being utilized, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. JTAG-Clock Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must be connected to VSS. This pin is not available on TQFP packages. No Connects. Not internally connected to the die TMS - U2 R5 TCK - U4 R7 NC 14,16,66, 39,38 B1,C1, R1,T1,T2,J3, D4, L4,J5,R5,6T, 6U, B7,C7, R7 A11,B1,C2, C10,H1,H3,H9 ,H10, N2,N5,N7,N10 ,P1,A1,B11,P2 ,R2,N6 CY7C1382CV25–Pin Definitions Name A0, A1, A TQFP 37,36,32, 33,34,35, 42,43,44, 45,46,47, 48,49,50, 80,81,82, 99,100 BGA P4,N4, A2,B2, C2,R2, T2,A3, B3,C3, T3,A5, B5,C5, T5,A6, B6,C6, R6,T6 G3,L5 fBGA I/O Description InputAddress Inputs used to select one of the R6,P6,A2, Synchronous address locations. Sampled at the rising A10,A11, edge of the CLK if ADSP or ADSC is active B2,B10,P3,P4,N6,P 8,P9, LOW, and CE1, CE2, and CE3 are sampled P10,P11, active. A1: A0 are fed to the two-bit counter.. R3,R4,R8,R9,R10, R11 BWA,BWB 93,94 B5,A4 InputByte Write Select Inputs, active LOW. Synchronous Qualified with BWE to conduct byte writes to the SRAM. Sampled on the rising edge of CLK. Document #: 38-05240 Rev. *C Page 8 of 33 CY7C1380CV25 CY7C1382CV25 CY7C1382CV25–Pin Definitions (continued) Name GW TQFP 88 BGA H4 fBGA B7 I/O Description InputGlobal Write Enable Input, active LOW. Synchronous When asserted LOW on the rising edge of CLK, a global write is conducted (ALL bytes are written, regardless of the values on BWX and BWE). InputByte Write Enable Input, active LOW. Synchronous Sampled on the rising edge of CLK. This signal must be asserted LOW to conduct a byte write. InputClock Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst counter when ADV is asserted LOW, during a burst operation. BWE CLK 87 M4 A7 89 K4 B6 CE1 98 E4 A3 InputChip Enable 1 Input, active LOW. Sampled Synchronous on the rising edge of CLK. Used in conjunction with CE2 and CE3 to select/deselect the device. ADSP is ignored if CE1 is HIGH. InputChip Enable 2 Input, active HIGH. Sampled Synchronous on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. InputChip Enable 3 Input, active LOW. Sampled Synchronous on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. Not available for AJ package version.Not connected for BGA. Where referenced, CE3 is assumed active throughout this document for BGA. Output Enable, asynchronous input, active InputAsynchronou LOW. Controls the direction of the I/O pins. When LOW, the I/O pins behave as outputs. s When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected state. InputAdvance Input signal, sampled on the Synchronous rising edge of CLK, active LOW. When asserted, it automatically increments the address in a burst cycle. InputAddress Strobe from Processor, sampled Synchronous on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH. InputAddress Strobe from Controller, sampled Synchronous on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A1: A0 are also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. CE2[2] 97 - B3 CE3 [2] 92 - A6 OE 86 F4 B8 ADV 83 G4 A9 ADSP 84 A4 B9 ADSC 85 P4 A8 Document #: 38-05240 Rev. *C Page 9 of 33 CY7C1380CV25 CY7C1382CV25 CY7C1382CV25–Pin Definitions (continued) Name ZZ TQFP 64 BGA T7 fBGA H11 I/O Description InputZZ “sleep” Input, active HIGH. When Asynchronou asserted HIGH places the device in a s non-time-critical “sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down. DQs, DQPs 58,59,62, 63,68,69, 72,73,8,9, 12,13,18, 19,22,23, 74,24 VDD 15,41,65, 91 J10,K10, I/OBidirectional Data I/O lines. As inputs, they P7,K7, L10,M10, Synchronous feed into an on-chip data register that is G7,E7, D11,E11, triggered by the rising edge of CLK. As outputs, F6,H6,L6,N6, F11,G11,J1,K1,L1,M they deliver the data contained in the memory D1, 1,D2,E2,F2, location specified by the addresses presented H1,L1, G2,C11,N1 during the previous clock rise of the read cycle. N1,E2, G2,K2, The direction of the pins is controlled by OE. M2,D6, When OE is asserted LOW, the pins behave P2 as outputs. When HIGH, DQs and DQPX are placed in a three-state condition. C4,J2,J4,J6, D4,D8,E4,E8,F4,F8, Power Supply Power supply inputs to the core of the device. R4 G4,G8,H4, H8,J4,J8, K4,K8,L4, L8,M4,M8 H2,C4,C5,C6,C7,C8 D3,D5, E5,E3,F3,F5, ,D5,D6,D7,E5,E6,E7 , G5, F5,F6,F7, H3,H5, G5,G6,G7, K3,K5,L3,M3, H5,H6,H7,J5,J6,J7, M5, K5,K6,K7, N3,N5, L5,L6,L7, P3,P5 M5,M6,M7,N4,N8 Ground Ground for the core of the device. VSS 17,40,67, 90 VSSQ VDDQ 5,10,21,26,55, 60,71, 76 I/O Ground Ground for the I/O circuitry. 4,11,20,27,54, A1,A7,F1,F7, C3,C9,D3,D9,E3,E9 61,70, J1,J7,M1,M7, , 77 U1,U7 F3,F9,G3, G9,J3,J9, K3,K9,L3, L9,M3,M9,N3,N9 31 R3 R1 I/O Power Supply Power supply for the I/O circuitry. MODE InputStatic Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation. Mode Pin has an internal pull-up. TDO - U5 P7 JTAG serial Serial data-out to the JTAG circuit. Delivers output data on the negative edge of TCK. If the JTAG Synchronous feature is not being utilized, this pin should be left unconnected. This pin is not available on TQFP packages. JTAG serial Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature input Synchronous is not being utilized, this pin can be left floating or connected to VDD through a pull up resistor. This pin is not available on TQFP packages. TDI - U3 P5 Document #: 38-05240 Rev. *C Page 10 of 33 CY7C1380CV25 CY7C1382CV25 CY7C1382CV25–Pin Definitions (continued) Name TMS TQFP BGA U2 fBGA R5 I/O Description JTAG serial Serial data-In to the JTAG circuit. Sampled input on the rising edge of TCK. If the JTAG feature Synchronous is not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. JTAG-Clock Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must be connected to VSS. This pin is not available on TQFP packages. No Connects. Not internally connected to the die. TCK - U4 R7 NC 1,2,3,6,7, 14,16,25, 28,29,30, 38,39, 51,52,53, 56,57,66, 75,78,79, 95,96 A5,B1,B4, B1,B7, C1,C2,C10,D1,D10, C1,C7, E1,E10,F1, D2,D4, F10,G1, D7,E1, G10,H1,H3,H9,H10, E6,H2, J2,J11, F2,G1, K2, G6,H7, K11,L2,L1,M2,M11, J3,J5,K1, N2,N7,N10, K6,L4,L2,L7, N5, M6, N11,P1,A1, N2,L7,P1,P6, B11, R1, P2,R2 R5,R7, T1,T4,U6 Functional Overview All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 3.0ns (200-MHz device). The CY7C1380CV25/CY7C1382CV25 supports secondary cache in systems utilizing either a linear or interleaved burst sequence. The interleaved burst order supports Pentium and i486 processors. The linear burst sequence is suited for processors that utilize a linear burst sequence. The burst order is user selectable, and is determined by sampling the MODE input. Accesses can be initiated with either the Processor Address Strobe (ADSP) or the Controller Address Strobe (ADSC). Address advancement through the burst sequence is controlled by the ADV input. A two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automatically increments the address for the rest of the burst access. Byte Write operations are qualified with the Byte Write Enable (BWE) and Byte Write Select (BWX) inputs. A Global Write Enable (GW) overrides all Byte Write inputs and writes data to all four bytes. All writes are simplified with on-chip synchronous self-timed Write circuitry. Three synchronous Chip Selects (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. ADSP is ignored if CE1 is HIGH. Single Read Accesses This access is initiated when the following conditions are satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2) CE1, CE2, CE3 are all asserted active, and (3) the Write signals (GW, BWE) are all deserted HIGH. ADSP is ignored if Document #: 38-05240 Rev. *C CE1 is HIGH. The address presented to the address inputs (A) is stored into the address advancement logic and the Address Register while being presented to the memory array. The corresponding data is allowed to propagate to the input of the Output Registers. At the rising edge of the next clock the data is allowed to propagate through the output register and onto the data bus within 3.0 ns (200-MHz device) if OE is active LOW. The only exception occurs when the SRAM is emerging from a deselected state to a selected state, its outputs are always three-stated during the first cycle of the access. After the first cycle of the access, the outputs are controlled by the OE signal. Consecutive single Read cycles are supported. Once the SRAM is deselected at clock rise by the chip select and either ADSP or ADSC signals, its output will three-state immediately. Single Write Accesses Initiated by ADSP This access is initiated when both of the following conditions are satisfied at clock rise: (1) ADSP is asserted LOW, and (2) CE1, CE2, CE3 are all asserted active. The address presented to A is loaded into the address register and the address advancement logic while being delivered to the memory array. The Write signals (GW, BWE, and BWX) and ADV inputs are ignored during this first cycle. ADSP-triggered Write accesses require two clock cycles to complete. If GW is asserted LOW on the second clock rise, the data presented to the DQs inputs is written into the corresponding address location in the memory array. If GW is HIGH, then the Write operation is controlled by BWE and BWX signals. The CY7C1380CV25/CY7C1382CV25 provides Byte Write capability that is described in the Write Cycle Descriptions table. Asserting the Byte Write Enable input (BWE) with the selected Byte Write (BWX) input, will selectively write to only the desired bytes. Bytes not selected during a Byte Write operation will remain unaltered. A synchronous self-timed Page 11 of 33 CY7C1380CV25 CY7C1382CV25 Write mechanism has been provided to simplify the Write operations. Because the CY7C1380CV25/CY7C1382CV25 is a common I/O device, the Output Enable (OE) must be deserted HIGH before presenting data to the DQs inputs. Doing so will three-state the output drivers. As a safety precaution, DQs are automatically three-stated whenever a Write cycle is detected, regardless of the state of OE. Single Write Accesses Initiated by ADSC ADSC Write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deserted HIGH, (3) CE1, CE2, CE3 are all asserted active, and (4) the appropriate combination of the Write inputs (GW, BWE, and BWX) are asserted active to conduct a Write to the desired byte(s). ADSC-triggered Write accesses require a single clock cycle to complete. The address presented to A is loaded into the address register and the address advancement logic while being delivered to the memory array. The ADV input is ignored during this cycle. If a global Write is conducted, the data presented to the DQs is written into the corresponding address location in the memory core. If a Byte Write is conducted, only the selected bytes are written. Bytes not selected during a Byte Write operation will remain unaltered. A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because the CY7C1380CV25/CY7C1382CV25 is a common I/O device, the Output Enable (OE) must be deserted HIGH before presenting data to the DQs inputs. Doing so will three-state the output drivers. As a safety precaution, DQs are automatically three-stated whenever a Write cycle is detected, regardless of the state of OE. Burst Sequences The CY7C1380CV25/CY7C1382CV25 provides a two-bit wraparound counter, fed by A1: A0, that implements either an interleaved or linear burst sequence. The interleaved burst sequence is designed specifically to support Intel Pentium applications. The linear burst sequence is designed to support processors that follow a linear burst sequence. The burst sequence is user selectable through the MODE input. Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CE1, CE2, CE3, ADSP, and ADSC must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Asserting ADV LOW at clock rise will automatically increment the burst counter to the next address in the burst sequence. Both Read and Write burst operations are supported. Interleaved Burst Address Table (MODE = Floating or VDD) . First Address A1: A0 00 01 10 11 First Address A1: A0 00 01 10 11 Second Address A1: A0 01 00 11 10 Second Address A1: A0 01 10 11 00 Third Address A1: A0 10 11 00 01 Third Address A1: A0 10 11 00 01 Fourth Address A1: A0 11 10 01 00 Fourth Address A1: A0 11 00 01 10 Linear Burst Address Table (MODE = GND) ZZ Mode Electrical Characteristics Parameter IDDZZ tZZS tZZREC tZZI tRZZI Description Snooze mode standby current Device operation to ZZ ZZ recovery time ZZ Active to snooze current ZZ Inactive to exit snooze current Test Conditions ZZ > VDD – 0.2V ZZ > VDD – 0.2V ZZ < 0.2V This parameter is sampled This parameter is sampled 0 2tCYC 2tCYC Min. Max. 60mA 2tCYC Unit mA ns ns ns ns Document #: 38-05240 Rev. *C Page 12 of 33 CY7C1380CV25 CY7C1382CV25 Truth Table[ 3, 4, 5, 6, 7, 8] Add. Used CE1 CE2 CE3 ZZ ADSP Deselect Cycle, Power-down None H X X L X Deselect Cycle, Power-down Deselect Cycle, Power-down Deselect Cycle, Power-down Deselect Cycle, Power-down Snooze Mode, Power-down READ Cycle, Begin Burst READ Cycle, Begin Burst WRITE Cycle, Begin Burst READ Cycle, Begin Burst READ Cycle, Begin Burst READ Cycle, Continue Burst READ Cycle, Continue Burst READ Cycle, Continue Burst READ Cycle, Continue Burst WRITE Cycle, Continue Burst WRITE Cycle, Continue Burst READ Cycle, Suspend Burst READ Cycle, Suspend Burst READ Cycle, Suspend Burst READ Cycle, Suspend Burst WRITE Cycle,Suspend Burst WRITE Cycle,Suspend Burst None None None None None External External External External External Next Next Next Next Next Next Current Current Current Current Current Current L L L L X L L L L L X X H H X H X X H H X H L X L X X H H H H H X X X X X X X X X X X X X H X H X L L L L L X X X X X X X X X X X X L L L L H L L L L L L L L L L L L L L L L L L L H H X L L H H H H H X X H X H H X X H X Operation ADSC L X X L L X X X L L L H H H H H H H H H H H H ADV X X X X X X X X X X X L L L L L L H H H H H H WRITE OE CLK X X L-H X X X X X X X L H H H H H H L L H H H H L L X X X X X L H X L H L H L H X X L H L H X X L-H L-H L-H L-H X L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H DQ three-state three-state three-state three-state three-state three-state Q three-state D Q three-state Q three-state Q three-state D D Q three-state Q three-state D D Truth Table for Read/Write [5] Function (CY7C1380CV25) Read Read Write Byte A – (DQA and DQPA) Write Byte B – (DQB and DQPB) Write Bytes B, A Write Byte C – (DQC and DQPC) Write Bytes C, A Write Bytes C, B GW H H H H H H H H BWE H L L L L L L L BWD X H H H H H H H BWC X H H H H L L L BWB X H H L L H H L BWA X H L H L H L H Notes: 3. X = “Don't Care.” H = Logic HIGH, L = Logic LOW. 4. WRITE = L when any one or more Byte Write enable signals and BWE = L or GW= L. WRITE = H when all Byte write enable signals, BWE, GW = H. 5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 6. CE1, CE2, and CE3 are available only in the TQFP package. BGA package has only 2 chip selects CE1 and CE2. 7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to three-state. OE is a don't care for the remainder of the write cycle 8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are three-state when OE is inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW). Document #: 38-05240 Rev. *C Page 13 of 33 CY7C1380CV25 CY7C1382CV25 Truth Table for Read/Write (continued)[5] Function (CY7C1380CV25) Write Bytes C, B, A Write Byte D – (DQD and DQPD) Write Bytes D, A Write Bytes D, B Write Bytes D, B, A Write Bytes D, C Write Bytes D, C, A Write Bytes D, C, B Write All Bytes Write All Bytes GW H H H H H H H H H L BWE L L L L L L L L L X BWD H L L L L L L L L X BWC L H H H H L L L L X BWB L H H L L H H L L X BWA L H L H L H L H L X Truth Table for Read/Write[5] Function (CY7C1382CV25) Read Read Write Byte A – (DQA and DQPA) Write Byte B – (DQB and DQPB) Write Bytes B, A Write All Bytes Write All Bytes GW H H H H H H L BWE H L L L L L X BWB X H H L L L X BWA X H L H L L X IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1380CV25/CY7C1382CV25 incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM. Note that the TAP controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant TAPs. The TAP operates using JEDEC-standard 2.5V I/O logic levels. The CY7C1380CV25/CY7C1382CV25 contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull-up resistor. TDO should be left unconnected. Upon power-up, the device will come up in a reset state which will not interfere with the operation of the device. TAP Controller State Diagram 1 TEST-LOGIC RESET 0 0 RUN-TEST/ IDLE 1 SELECT DR-SCAN 0 1 CAPTURE-DR 0 SHIFT-DR 1 EXIT1-DR 0 PAUSE-DR 1 0 EXIT2-DR 1 UPDATE-DR 1 0 0 0 1 0 1 1 SELECT IR-SCAN 0 CAPTURE-IR 0 SHIFT-IR 1 EXIT1-IR 0 PAUSE-IR 1 EXIT2-IR 1 UPDATE-IR 1 0 0 1 0 1 The 0/1 next to each state represents the value of TMS at the rising edge of TCK. Document #: 38-05240 Rev. *C Page 14 of 33 CY7C1380CV25 CY7C1382CV25 Test Access Port (TAP) Test Clock (TCK) The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test MODE SELECT (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. It is allowable to leave this ball unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI ball is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see Figure . TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register. (See Tap Controller Block Diagram.) Test Data-Out (TDO) The TDO output ball is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. (See Tap Controller State Diagram.) circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the Tap Controller Block Diagram. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test data path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all the input and bidirectional balls on the SRAM. The SRAM has a 75-bit-long register. The boundary scan register is loaded with the contents of the RAM I/O ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the I/O ring. The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in the Identification Register Definitions table. TAP Instruction Set Performing a TAP Reset A RESET is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power-up, the TAP is reset internally to ensure that TDO comes up in a High-Z state. TAP Registers Registers are connected between the TDI and TDO balls and allow data to be scanned into and out of the SRAM test Document #: 38-05240 Rev. *C Overview Eight different instructions are possible with the three bit instruction register. All combinations are listed in the Instruction Codes table. Three of these instructions are listed as RESERVED and should not be used. The other five instructions are described in detail below. The TAP controller used in this SRAM is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. The TAP controller cannot be used to load address data or control signals into the SRAM and cannot preload the I/O Page 15 of 33 TAP Controller Block Diagram 0 Bypass Register 210 TDI Selection Circuitry Instruction Register 31 30 29 . . . 2 1 0 Selection Circuitry TDO Identification Register x. . . . .210 Boundary Scan Register TCK TMS TAP CONTROLLER CY7C1380CV25 CY7C1382CV25 buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE/PRELOAD; rather, it performs a capture of the I/O ring when these instructions are executed. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction once it is shifted in, the TAP controller needs to be moved into the Update-IR state. EXTEST EXTEST is a mandatory 1149.1 instruction which is to be executed whenever the instruction register is loaded with all 0s. EXTEST is not implemented in this SRAM TAP controller, and therefore this device is not compliant to 1149.1. The TAP controller does recognize an all-0 instruction. When an EXTEST instruction is loaded into the instruction register, the SRAM responds as if a SAMPLE/PRELOAD instruction has been loaded. There is one difference between the two instructions. Unlike the SAMPLE/PRELOAD instruction, EXTEST places the SRAM outputs in a High-Z state. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO balls when the TAP controller is in a Shift-DR state. It also places all SRAM outputs into a High-Z state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The PRELOAD portion of this instruction is not implemented, so the device TAP controller is not fully 1149.1 compliant. When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 10 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To guarantee that the boundary scan register will capture the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold time (tCS plus tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CLK captured in the boundary scan register. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO balls. Note that since the PRELOAD part of the command is not implemented, putting the TAP to the Update-DR state while performing a SAMPLE/PRELOAD instruction will have the same effect as the Pause-DR command. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO balls. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. Document #: 38-05240 Rev. *C Page 16 of 33 CY7C1380CV25 CY7C1382CV25 TAP Timing 1 Test Clock (TCK) t TMSS 2 3 4 5 6 t TH t TMSH t TL t CYC Test Mode Select (TMS) t TDIS t TDIH Test Data-In (TDI) t TDOV t TDOX Test Data-Out (TDO) DON’T CARE UNDEFINED TAP AC Switching Characteristics Over the operating Range[9, 10] Parameter Clock tTCYC tTF tTH tTL tTDOV tTDOX tTMSS tTDIS tCS tTMSH tTDIH tCH TCK Clock Cycle Time TCK Clock Frequency TCK Clock HIGH time TCK Clock LOW time Output Times TCK Clock LOW to TDO Valid TCK Clock LOW to TDO Invalid Set-up Times TMS Set-up to TCK Clock Rise TDI Set-up to TCK Clock Rise Capture Set-up to TCK Rise Hold Times TMS hold after TCK Clock Rise TDI Hold after Clock Rise Capture Hold after Clock Rise 10 10 10 ns ns ns 10 10 10 ns ns 0 20 ns ns 40 40 100 10 ns MHz ns ns Description Min. Max. Unit Notes: 9. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 10. Test conditions are specified using the load in TAP AC test Conditions. tR/tF = 1ns. Document #: 38-05240 Rev. *C Page 17 of 33 CY7C1380CV25 CY7C1382CV25 2.5V TAP AC Test Conditions Input pulse levels ......................................... VSS to 2.5V Input rise and fall time..................................................... 1 ns Input timing reference levels .........................................1.25V Output reference levels.................................................1.25V Test load termination supply voltage.............................1.25V 2.5V TAP AC Output Load Equivalent 1.25V 50Ω TDO Z O= 50Ω 20pF TAP DC Electrical Characteristics And Operating Conditions (0°C < TA < +70°C; Vdd = 2.5V ±0.125V unless otherwise noted)[11] Parameter VOH1 VOH2 VOL1 VOL2 VIH VIL IX Description Output HIGH Voltage Output HIGH Voltage Output LOW Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Load Current GND < VIN < VDDQ Description IOH = -1.0 mA IOH = -100 µA IOL = 8.0 mA IOL = 100 µA Conditions VDDQ = 2.5V VDDQ = 2.5V VDDQ = 2.5V VDDQ = 2.5V VDDQ = 2.5V VDDQ = 2.5V 1.7 -0.3 -5 Min. 2.0 2.1 0.4 0.2 VDD + 0.3 0.7 5 Max. Unit V V V V V V µA Identification Register Definitions Instruction Field Revision Number (31:29) Device Depth (28:24) Architecture/Memory type(23:18) Bus Width/Density(17:12) Cypress JEDEC ID Code (11:1) ID Register Presence Indicator (0) CY7C1380CV25 (512Kx36) 010 01011 000000 100101 00000110100 1 CY7C1382CV25 (1Mx18) 010 01011 000000 010101 00000110100 1 Description Describes the version number. Reserved for internal use. Defines memory type and architecture. Defines width and density. Allows unique identification of SRAM vendor. Indicates the presence of an ID register. Scan Register Sizes Register Name Instruction Bypass ID Boundary Scan Order Bit Size (x36) 3 1 32 72 Bit Size (x18) 3 1 32 72 Identification Codes Instruction EXTEST IDCODE SAMPLE Z RESERVED Code 000 001 010 011 Description Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM outputs to High-Z state. This instruction is not 1149.1 compliant. Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operations. Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. Do Not Use: This instruction is reserved for future use. Note: 11. All voltages referenced to VSS (GND). Document #: 38-05240 Rev. *C Page 18 of 33 CY7C1380CV25 CY7C1382CV25 Identification Codes (continued) Instruction SAMPLE/PRELOAD Code 100 Description Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does not affect SRAM operation. This instruction does not implement 1149.1 preload function and is therefore not 1149.1 compliant. Do Not Use: This instruction is reserved for future use. Do Not Use: This instruction is reserved for future use. Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. RESERVED RESERVED BYPASS 101 110 111 119-Ball BGA Boundary Scan Order CY7C1380CV25 (512K x 36) Bit# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Ball ID K4 H4 M4 F4 B4 A4 G4 C6 A6 D6 D7 E6 G6 H7 E7 F6 G7 H6 T7 K7 L6 N6 P7 K6 L7 M6 N7 P6 B5 B3 C5 C3 Bit# 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 Ball ID B2 P4 N4 R6 T5 T3 R2 R3 P2 P1 N2 L2 K1 N1 M2 L1 K2 Not Bonded (Preset to1) H1 G2 E2 D1 H2 G1 F2 E1 D2 A5 A3 E4 Internal L3 Document #: 38-05240 Rev. *C Page 19 of 33 CY7C1380CV25 CY7C1382CV25 119-Ball BGA Boundary Scan Order (continued) 33 34 35 36 Bit# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 Bit# 32 33 34 35 36 C2 A2 T4 B6 Ball ID K4 H4 M4 F4 B4 A4 G4 C6 A6 T6 Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) D6 E7 F6 G7 H6 T7 K7 L6 N6 P7 Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) B5 B3 C5 Ball ID C3 C2 A2 T2 B6 69 70 71 72 CY7C1382CV25 (1M x 18) Bit# 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 CY7C1382CV25 (1M x 18) (continued) Bit# 68 69 70 71 72 Ball ID Not Bonded (Preset to 0) Internal G3 L5 Internal Ball ID B2 P4 N4 R6 T5 T3 R2 R3 Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) P2 N1 M2 L1 K2 Not Bonded (Preset to 1) H1 G2 E2 D1 Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) A5 A3 E4 Internal G3 G5 L5 Internal Document #: 38-05240 Rev. *C Page 20 of 33 CY7C1380CV25 CY7C1382CV25 165-Ball fBGA Boundary Scan Order CY7C1380CV25 (512K x 36) Bit# 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 Bit# 32 33 34 35 36 Bit# 1 2 3 4 5 Document #: 38-05240 Rev. *C Ball ID B6 B7 A7 B8 A8 B9 A9 B10 A10 C11 E10 F10 G10 D10 D11 E11 F11 Bit# 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 Ball ID N6 R6 P6 R4 R3 P4 P3 R1 N1 L2 K2 J2 M2 M1 L1 K1 J1 Not Bonded (Preset to1) G2 F2 E2 D2 G1 F1 E1 D1 C1 A2 B2 A3 B3 Ball ID B4 A4 A5 B5 A6 Ball ID N6 R6 P6 R4 R3 Page 21 of 33 G11 54 H11 55 J10 56 K10 57 L10 58 M10 59 J11 60 K11 61 L11 62 M11 63 N11 64 R11 65 R10 66 R9 67 CY7C1380CV25 (512K x 36) (continued) Ball ID Bit# R8 68 P10 69 P9 70 P8 71 P11 72 CY7C1382CV25 (1M x 18) Ball ID Bit# B6 37 B7 38 A7 39 B8 40 A8 41 CY7C1380CV25 CY7C1382CV25 165-Ball fBGA Boundary Scan Order (continued) 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 B9 A9 B10 A10 A11 Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) C11 D11 E11 F11 G11 H11 J10 K10 L10 M10 Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) R11 R10 R9 R8 P10 P9 P8 P11 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 P4 P3 R1 Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) N1 M1 L1 K1 J1 Not Bonded (Preset to 1) G2 F2 E2 D2 Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) Not Bonded (Preset to 0) A2 B2 A3 B3 Not Bonded (Preset to 0) Not Bonded (Preset to 0) A4 B5 A6 Document #: 38-05240 Rev. *C Page 22 of 33 CY7C1380CV25 CY7C1382CV25 Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VDD Relative to GND........ –0.3V to +4.6V DC Voltage Applied to Outputs in three-state ....................................... –0.5V to VDDQ + 0.5V DC Input Voltage ................................... –0.5V to VDD + 0.5V Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage.......................................... > 2001V (per MIL-STD-883, Method 3015)Latch-up Current > 200 mA Operating Range Range Commercial Industrial [12, 13] Ambient Temperature 0°C to +70°C VDD VDDQ 2.5V – 5%/+5% 2.5V – 5% to VDD –40°C to +85°C Electrical Characteristics Over the Operating Range Parameter VDD VDDQ VOH VOL VIH VIL IX Description Power Supply Voltage I/O Supply Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage[12] Input LOW Voltage[12] Input Load Current except ZZ and MODE VDDQ = 2.5V Test Conditions Min. 2.375 2.375 2.0 Max. 2.625 VDD 0.4 Unit V V V V V V µA µA VDDQ = 2.5V, VDD = Min., IOH = –1.0 mA VDDQ = 2.5V, VDD = Min., IOL = 1.0 mA VDDQ = 2.5V VDDQ = 2.5V GND ≤ VI ≤ VDDQ 1.7 –0.3 –5 –30 VDD + 0.3V 0.7 5 Input Current of MODE Input = VSS Input = VDD Input Current of ZZ IOZ IDD Input = VSS Input = VDD Output Leakage Current GND ≤ VI ≤ VDDQ, Output Disabled VDD Operating Supply Current VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC 4.0-ns cycle, 250 MHz 4.4-ns cycle, 225 MHz 5.0-ns cycle, 200 MHz 6.0-ns cycle, 167 MHz 7.5-ns cycle, 133 MHz ISB1 Automatic CE Power-down Current—TTL Inputs VDD = Max, Device Deselected, VIN ≥ VIH or VIN ≤ VIL f = fMAX = 1/tCYC 4.0-ns cycle, 250 MHz 4.4-ns cycle, 225 MHz 5.0-ns cycle, 200 MHz 6.0-ns cycle, 167 MHz 7.5-ns cycle, 133 MHz ISB2 ISB3 Automatic CE VDD = Max, Device Deselected, VIN ≤ All speeds Power-down 0.3V or VIN > VDDQ – 0.3V, f = 0 Current—CMOS Inputs VDD = Max, Device Deselected, or VIN 4.0-ns cycle, 250 MHz Automatic CE Power-down ≤ 0.3V or VIN > VDDQ – 0.3V 4.4-ns cycle, 225 MHz Current—CMOS Inputs f = fMAX = 1/tCYC 5.0-ns cycle, 200 MHz 6.0-ns cycle, 167 MHz 7.5-ns cycle, 133 MHz ISB4 Automatic CE Power-down Current—TTL Inputs VDD = Max, Device Deselected, VIN ≥ VIH or VIN ≤ VIL, f = 0 All speeds 5 –30 5 –5 5 350 325 300 275 245 120 110 100 90 85 70 µA µA µA µA mA mA mA mA mA mA mA mA mA mA mA 105 100 95 85 80 80 mA mA mA mA mA mA Shaded areas contain advance information. Notes: 12. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > -2V (Pulse width less than tCYC/2). 13. TPower-up: Assumes a linear ramp from 0v to VDD(min.) within 200ms. During this time VIH < VDD and VDDQ < VDD. Document #: 38-05240 Rev. *C Page 23 of 33 CY7C1380CV25 CY7C1382CV25 Thermal Resistance[14] Parameter Description Thermal Resistance (Junction to Ambient) Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedence, per EIA / JESD51. TQFP Package 31 6 BGA Package 45 7 fBGA Package 46 3 Unit °C/W °C/W ΘJA ΘJC Capacitance[14] Parameter CIN CCLK CI/O Description Input Capacitance Clock Input Capacitance Input/Output Capacitance Test Conditions TA = 25°C, f = 1 MHz, VDD = 2.5V. VDDQ = 2.5V TQFP Package 5 5 5 BGA Package 8 8 8 fBGA Package 9 9 9 Unit pF pF pF AC Test Loads and Waveforms 2.5V I/O Test Load OUTPUT Z0 = 50Ω 2.5V OUTPUT RL = 50Ω VL = 1.25V R = 1667Ω VDD 5 pF GND R =1538Ω 10% ALL INPUT PULSES 90% 90% 10% ≤ 1ns (a) INCLUDING JIG AND SCOPE ≤ 1ns (b) (c) Switching Characteristics Over the Operating Range [19, 20] 250 MHz Parameter tPOWER Clock tCYC tCH tCL Output Times tCO tDOH tCLZ tCHZ tOEV tOELZ Data Output Valid After CLK Rise Data Output Hold After CLK Rise Clock to Low-Z[16, 17, 18] Clock to High-Z[16, 17, 18] OE LOW to Output Valid OE LOW to Output Low-Z[16, 17, 18] [16, 17, 18] 225 MHz 1 4.4 2.0 2.0 200 MHz 1 5 2.0 2.0 167 MHz 1 6 2.2 2.2 133 MHz Unit ms ns ns ns 4.2 1.3 1.3 ns ns ns 3.4 4.2 0 ns ns ns 1 7.5 2.5 2.5 Description VDD(Typical) to the first Clock Cycle Time Clock HIGH Clock LOW Access[15] Min. Max. Min. Max. Min. Max. Min. Max Min. Max 1 4.0 1.7 1.7 2.6 1.0 1.0 2.6 2.6 0 0 1.0 1.0 2.8 2.8 0 2.8 1.3 1.3 3.0 1.3 1.3 3.0 3.0 0 3.4 3.4 3.4 tOEHZ 2.6 2.8 3.0 3.4 4.0 ns OE HIGH to Output High-Z Shaded areas contain advance information. Notes: 14. Tested initially and after any design or process change that may affect these parameters 15. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially before a read or write operation can be initiated. 16. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage. 17. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions 18. This parameter is sampled and not 100% tested. 19. Timing reference level is 1.25V when VDDQ=2.5V. 20. Test conditions shown in (a) of AC Test Loads unless otherwise noted. Document #: 38-05240 Rev. *C Page 24 of 33 CY7C1380CV25 CY7C1382CV25 Switching Characteristics Over the Operating Range (continued)[19, 20] 250 MHz Parameter Set-up Times tAS tADS tADVS tWES tDS tCES Hold Times tAH tADH tADVH tWEH tDH tCEH Address Hold After CLK Rise ADSP , ADSC Hold After CLK Rise ADV Hold After CLK Rise GW,BWE, BWX Hold After CLK Rise Data Input Hold After CLK Rise Chip Enable Hold After CLK Rise 0.3 0.3 0.3 0.3 0.3 0.3 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.4 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 ns ns ns ns ns ns Address Set-up Before CLK Rise ADSC, ADSP Set-up Before CLK Rise ADV Set-up Before CLK Rise GW, BWE, BWX Set-up Before CLK Rise Data Input Set-up Before CLK Rise 1.2 1.2 1.2 1.2 1.2 1.4 1.4 1.4 1.4 1.4 1.4 1.4 1.4 1.4 1.4 1.4 1.4 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 ns ns ns ns ns ns Description 225 MHz 200 MHz 167 MHz 133 MHz Unit Min. Max. Min. Max. Min. Max. Min. Max Min. Max Chip Enable Set-Up Before CLK Rise 1.2 Document #: 38-05240 Rev. *C Page 25 of 33 CY7C1380CV25 CY7C1382CV25 Switching Waveforms Read Cycle Timing[21] t CYC CLK t CH t ADS ADSP tADS ADSC tAS A1 tWES GW, BWE, BWx tCES CE tADVS tADVH ADV ADV suspends burst. OE tOEV t OEHZ t CLZ Data Out (Q) High-Z Q(A1) t CO Burst wraps around to its initial state Single READ BURST READ t OELZ tCO tDOH Q(A2) Q(A2 + 1) Q(A2 + 2) Q(A2 + 3) Q(A2) t CHZ Q(A2 + 1) tCEH Deselect cycle tWEH tAH tADH t ADH t CL ADDRESS A2 A3 Burst continued with new base address DON’T CARE UNDEFINED Notes: 21. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH. 22. Full width write can be initiated by either GW LOW; or by GW HIGH, BWE LOW and BWX LOW. Document #: 38-05240 Rev. *C Page 26 of 33 CY7C1380CV25 CY7C1382CV25 Switching Waveforms (continued) Write Cycle Timing[21, 22] t CYC CLK tCH tADS ADSP ADSC extends burst tADS tADH tADH tCL tADS ADSC tAS A1 tAH tADH ADDRESS A2 Byte write signals are ignored for first cycle when ADSP initiates burst A3 tWES tWEH BWE, BWX tWES tWEH GW tCES CE t t ADVS ADVH ADV ADV suspends burst tCEH OE tDS tDH Data In (D) High-Z t OEHZ D(A1) D(A2) D(A2 + 1) D(A2 + 1) D(A2 + 2) D(A2 + 3) D(A3) D(A3 + 1) D(A3 + 2) Data Out (Q) BURST READ Single WRITE BURST WRITE Extended BURST WRITE DON’T CARE UNDEFINED Document #: 38-05240 Rev. *C Page 27 of 33 CY7C1380CV25 CY7C1382CV25 Switching Waveforms (continued) Read/Write Cycle Timing[21, 23, 24] tCYC CLK tCH tADS ADSP tADH tCL ADSC tAS tAH ADDRESS A1 A2 A3 tWES tWEH A4 A5 A6 BWE, BWX tCES CE tCEH ADV OE tCO tDS tDH tOELZ Data In (D) High-Z tCLZ Data Out (Q) High-Z Q(A1) Back-to-Back READs tOEHZ Q(A2) Single WRITE D(A3) D(A5) D(A6) Q(A4) Q(A4+1) BURST READ Q(A4+2) Q(A4+3) Back-to-Back WRITEs DON’T CARE UNDEFINED ZZ Mode Timing [25, 26] CLK t ZZ t ZZREC ZZ t ZZI I SUPPLY I DDZZ t RZZI DESELECT or READ Only ALL INPUTS (except ZZ) Outputs (Q) High-Z DON’T CARE Notes: 23. The data bus (Q) remains in high-Z following a WRITE cycle, unless a new read access is initiated by ADSP or ADSC. 24. GW is HIGH. Document #: 38-05240 Rev. *C Page 28 of 33 CY7C1380CV25 CY7C1382CV25 Ordering Information Speed (MHz) 250 Ordering Code CY7C1380CV25-250AC CY7C1382CV25-250AC CY7C1380CV25-250BGC CY7C1382CV25-250BGC CY7C1380CV25-250BZC CY7C1382CV25-250BZC 225 CY7C1380CV25-225AC CY7C1382CV25-225AC CY7C1380CV25-225BGC CY7C1382CV25-225BGC CY7C1380CV25-225BZC CY7C1382CV25-225BZC 200 CY7C1380CV25-200AC CY7C1382CV25-200AC CY7C1380CV25-200BGC CY7C1382CV25-200BGC CY7C1380CV25-200BZC CY7C1382CV25-200BZC 167 CY7C1380CV25-167AC CY7C1382CV25-167AC CY7C1380CV25-167BGC CY7C1382CV25-167BGC CY7C1380CV25-167BZC CY7C1382CV25-167BZC 133 CY7C1380CV25-133AC BB165A A101 165 fBGA 100-lead Thin Quad Flat Pack (14 x 20 x 1.4 mm) BG119 119 PBGA A101 100-lead Thin Quad Flat Pack (14 x 20 x 1.4 mm) BB165A 165 fBGA BG119 BB165A A101 BG119 119 PBGA 165 fBGA 100-lead Thin Quad Flat Pack (14 x 20 x 1.4 mm) 119 PBGA Package Name A101 BG119 BB165A A101 Part and Package Type 100-lead Thin Quad Flat Pack (14 x 20 x 1.4 mm) 119 PBGA 165 fBGA 100-lead Thin Quad Flat Pack (14 x 20 x 1.4 mm) Operating Range Commercial Notes: 25. Device must be deselected when entering ZZ mode. See Cycle Descriptions table for all possible signal conditions to deselect the device. 26. DQs are in high-Z when exiting ZZ sleep mode. 167 CY7C1380CV25-167AI CY7C1382CV25-167AI CY7C1380CV25-167BGI CY7C1382CV25-167BGI CY7C1380CV25-167BZI CY7C1382CV25-167BZI A101 BG119 BB165A 100-lead Thin Quad Flat Pack (14 x 20 x 1.4 mm) 119 PBGA 165 fBGA Industrial Shaded areas contain advance information. Please contact your local sales representative for availability of these parts. Document #: 38-05240 Rev. *C Page 29 of 33 CY7C1380CV25 CY7C1382CV25 Package Diagrams 100-Pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101 16.00±0.20 14.00±0.10 100 1 81 80 DIMENSIONS ARE IN MILLIMETERS. 1.40±0.05 0.30±0.08 22.00±0.20 20.00±0.10 0.65 TYP. 30 31 50 51 12°±1° (8X) SEE DETAIL A 0.20 MAX. 1.60 MAX. STAND-OFF 0.05 MIN. 0.15 MAX. 0.10 R 0.08 MIN. 0.20 MAX. 0° MIN. 0.25 GAUGE PLANE R 0.08 MIN. 0.20 MAX. SEATING PLANE 0°-7° 0.60±0.15 0.20 MIN. 1.00 REF. DETAIL A 51-85050-*A Document #: 38-05240 Rev. *C Page 30 of 33 CY7C1380CV25 CY7C1382CV25 Package Diagrams (continued) 119-Lead PBGA (14 x 22 x 2.4 mm) BG119 51-85115-*B Document #: 38-05240 Rev. *C Page 31 of 33 CY7C1380CV25 CY7C1382CV25 Package Diagrams (continued) 165-Ball FBGA (13 x 15 x 1.2 mm) BB165A 51-85122-*C i486 is a trademark, and Intel and Pentium are registered trademarks of Intel Corporation. PowerPC is a trademark of IBM Corporation. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05240 Rev. *C Page 32 of 33 © Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. CY7C1380CV25 CY7C1382CV25 Document History Page Document Title: CY7C1380CV25/CY7C1382CV25 18-Mbit (512K x 36/1M x 18) Pipelined SRAM Document Number: 38-05240 REV. ** *A *B *C ECN NO. 116280 121543 206081 230388 Issue Date 08/29/02 11/21/02 See ECN See ECN Orig. of Change SKX DSG RKF VBL New Data Sheet Updated package diagrams 51-85115 (BG119) to rev. *B and 51-85122 (BB165A) to rev. *C Final data sheet Update Ordering Info section: Shade Selection Guide and Characteristics table Changed the title for 119-BGA pin table for CY7C1382CV25 from “512K x 18” to “1M x 18” Modified Identification Register Definitions table: Changed Bit #24 from “0” to “1” and changed “Device Width” to “Architecture/Memory type” Description of Change Document #: 38-05240 Rev. *C Page 33 of 33