CY7C1393JV18-300BZXC

CY7C1393JV18 CY7C1394JV18 18 Mbit DDR II SIO SRAM Two Word Burst Architecture Features Functional Description ■ 18 Mbit Density (1M x 18, 512K x 36) ■ 300 MHz Clock for High Bandwidth ■ Two word Burst for reducing Address Bus Frequency ■ Double Data Rate (DDR) Interfaces (data transferred at 600 MHz) at 300 MHz ■ Two Input Clocks (K and K) for Precise DDR Timing ❐ SRAM uses rising edges only ■ Two Input Clocks for Output Data (C and C) to Minimize Clock Skew and Flight Time mismatches ■ Echo Clocks (CQ and CQ) simplify Data Capture in High Speed Systems ■ Synchronous Internally self timed Writes ■ DDR II operates with 1.5 cycle Read Latency when the DLL is enabled ■ Operates similar to a DDR I Device with one Cycle Read Latency in DLL Off Mode The CY7C1393JV18, and CY7C1394JV18 are 1.8V Synchronous Pipelined SRAMs, equipped with Double Data Rate Separate IO (DDR II SIO) architecture. The DDR II SIO consists of two separate ports: the read port and the write port to access the memory array. The read port has data outputs to support read operations and the write port has data inputs to support write operations. The DDR II SIO has separate data inputs and data outputs to completely eliminate the need to ‘turnaround’ the data bus required with common IO devices. Access to each port is accomplished through a common address bus. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C or C is not provided. Each address location is associated with two 18-bit words in the case of CY7C1393JV18, and two 36-bit words in the case of CY7C1394JV18 that burst sequentially into or out of the device. ■ 1.8V Core Power Supply with HSTL Inputs and Outputs ■ Variable Drive HSTL Output Buffers ■ Expanded HSTL Output Voltage (1.4V–VDD) ■ Available in 165-Ball FBGA Package (13 x 15 x 1.4 mm) ■ Offered in both Pb-free and non Pb-free packages ■ JTAG 1149.1 compatible Test Access Port ■ Delay Lock Loop (DLL) for Accurate Data Placement Asynchronous inputs include an output impedance matching input (ZQ). Synchronous data outputs are tightly matched to the two output echo clocks CQ/CQ, eliminating the need to capture data separately from each individual DDR II SIO SRAM in the system design. Output data clocks (C/C) enable maximum system clocking and data synchronization flexibility. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K/K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self timed write circuitry. Configurations CY7C1393JV18 – 1M x 18 CY7C1394JV18 – 512K x 36 Selection Guide Description Maximum Operating Frequency Maximum Operating Current Cypress Semiconductor Corporation Document #: 001-44698 Rev. *C • 300 MHz 250 MHz Unit 300 250 MHz x18 865 725 mA x36 935 770 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised August 25, 2009 [+] Feedback CY7C1393JV18 CY7C1394JV18 Logic Block Diagram (CY7C1393JV18) K K CLK Gen. DOFF LD LD Control Logic R/W C Read Data Reg. C CQ 36 R/W VREF 512K x 18 Array Address Register Write Data Reg Read Add. Decode 19 Write Data Reg 512K x 18 Array A(18:0) 18 Write Add. Decode D[17:0] 18 Control Logic 18 Reg. Reg. 18 Reg. 18 CQ 18 Q[17:0] BWS[1:0] Logic Block Diagram (CY7C1394JV18) K K CLK Gen. DOFF LD LD Control Logic R/W C Read Data Reg. C CQ 72 R/W VREF 256K x 18 Array Address Register Write Data Reg Read Add. Decode 18 Write Data Reg 256K x 18 Array A(17:0) 36 Write Add. Decode D[35:0] 36 Control Logic 36 Reg. Reg. 36 Reg. 36 CQ 36 Q[35:0] BWS[3:0] Document #: 001-44698 Rev. *C Page 2 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Pin Configuration The pin configurations for CY7C1393JV18, and CY7C1394JV18 follow. [1] 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C1393JV18 (1M x 18) 1 2 3 NC/144M NC/36M 4 5 6 7 8 9 10 11 R/W BWS1 K NC/288M LD A NC/72M CQ A CQ B NC Q9 D9 A NC K BWS0 A NC NC Q8 C NC NC D10 VSS A A A VSS NC Q7 D8 D NC D11 Q10 VSS VSS VSS VSS VSS NC NC D7 E NC NC Q11 VDDQ VSS VSS VSS VDDQ NC D6 Q6 F NC Q12 D12 VDDQ VDD VSS VDD VDDQ NC NC Q5 G NC D13 Q13 VDDQ VDD VSS VDD VDDQ NC NC D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC D14 VDDQ VDD VSS VDD VDDQ NC Q4 D4 K NC NC Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 L NC Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS A A A VSS NC NC D1 P NC NC Q17 A A C A A NC D0 Q0 R TDO TCK A A A C A A A TMS TDI 9 10 CY7C1394JV18 (512K x 36) 1 2 4 5 6 7 8 R/W BWS2 K BWS1 LD D18 A BWS3 K BWS0 A D17 Q17 Q8 Q28 D19 VSS A A A VSS D16 Q7 D8 D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7 Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q15 D6 Q6 Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ D14 Q14 Q5 G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 D4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 Q3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 Q2 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2 N D34 D26 Q25 VSS A A A VSS Q10 D9 D1 P Q35 D35 Q26 A A C A A Q9 D0 Q0 R TDO TCK A A A C A A A TMS TDI A CQ B Q27 Q18 C D27 D E F 3 NC/288M NC/72M 11 NC/36M NC/144M CQ Note 1. NC/36M, NC/72M, NC/144M, and NC/288M are not connected to the die and can be tied to any voltage level. Document #: 001-44698 Rev. *C Page 3 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Pin Definitions Pin Name IO Pin Description D[x:0] InputSynchronous Data Input Signals. Sampled on the rising edge of K and K clocks during valid write operations. CY7C1393JV18 - D[17:0] CY7C1394JV18 - D[35:0] LD InputSynchronous Synchronous Load. This input is brought LOW when a bus cycle sequence is defined. This definition includes address and read/write direction. All transactions operate on a burst of 2 data (one clock period of bus activity). BWS0, BWS1, BWS2, BWS3 InputSynchronous Byte Write Select 0, 1, 2 and 3 − Active LOW. Sampled on the rising edge of the K and K clocks during write operations. Used to select which byte is written into the device during the current portion of the write operations. Bytes not written remain unaltered. CY7C1393JV18 − BWS0 controls D[8:0], BWS1 controls D[17:9]. CY7C1394JV18 − BWS0 controls D[8:0], BWS1 controls D[17:9],BWS2 controls D[26:18] and BWS3 controls D[35:27]. All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select ignores the corresponding byte of data and is not written into the device. A InputSynchronous Address Inputs. Sampled on the rising edge of the K clock during active read and write operations. These address inputs are multiplexed for both read and write operations. Internally, the device is organized as 1M x 18 (2 arrays each of 512K x 18) for CY7C1393JV18, and 512K x 36 (2 arrays each of 256K x 36) for CY7C1394JV18. Therefore, only 19 address inputs are needed to access the entire memory array of CY7C1393JV18 and 18 address inputs for CY7C1394JV18. These inputs are ignored when the appropriate port is deselected. Q[x:0] OutputsSynchronous Data Output Signals. These pins drive out the requested data during a read operation. Valid data is driven out on the rising edge of both the C and C clocks during read operations, or K and K when in single clock mode. When the read port is deselected, Q[x:0] are automatically tri-stated. CY7C1393JV18 − Q[17:0] CY7C1394JV18 − Q[35:0] R/W InputSynchronous Synchronous Read/Write Input. When LD is LOW, this input designates the access type (read when R/W is HIGH, write when R/W is LOW) for the loaded address. R/W must meet the setup and hold times around the edge of K. C Input Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C are used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 7 for further details. C Input Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. C and C are used together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 7 for further details. K Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising edge of K. K Input Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and to drive out data through Q[x:0] when in single clock mode. CQ Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock for output data (C) of the DDR II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks are shown in the table Switching Characteristics on page 20. CQ Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock for output data (C) of the DDR II. In the single clock mode, CQ is generated with respect to K. The timings for the echo clocks are shown in the table Switching Characteristics on page 20. ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected between ZQ and ground. Alternatively, this pin is connected directly to VDDQ, which enables the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected. Document #: 001-44698 Rev. *C Page 4 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Pin Definitions Pin Name (continued) IO Pin Description DOFF Input DLL Turn Off − Active Low. Connecting this pin to ground turns off the DLL inside the device. The timing in the DLL turned off operation differs from those listed in this data sheet. For normal operation, this pin is connected to a pull up through a 10 Kohm or less pull up resistor. The device behaves in DDR I mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz with DDR I timing. TDO Output TDO for JTAG. TCK Input TCK Pin for JTAG. TDI Input TDI Pin for JTAG. TMS Input TMS Pin for JTAG. NC N/A Not Connected to the Die. Can be tied to any voltage level. NC/36M N/A Not Connected to the Die. Can be tied to any voltage level. NC/72M N/A Not Connected to the Die. Can be tied to any voltage level. NC/144M N/A Not Connected to the Die. Can be tied to any voltage level. NC/288M N/A Not Connected to the Die. Can be tied to any voltage level. VREF InputReference Reference Voltage Input. Static input used to set the reference level for HSTL inputs, Outputs, and AC measurement points. VDD Power Supply Power Supply Inputs to the Core of the Device. VSS Ground VDDQ Power Supply Power Supply Inputs for the Outputs of the Device. Ground for the Device. Document #: 001-44698 Rev. *C Page 5 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Functional Overview The CY7C1393JV18, and CY7C1394JV18 are synchronous pipelined Burst SRAMs equipped with a DDR II Separate IO interface, which operates with a read latency of one and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS the device behaves in DDR I mode with a read latency of one clock cycle. Accesses are initiated on the rising edge of the positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is referenced to the rising edge of the output clocks (C/C, or K/K when in single clock mode). All synchronous data inputs (D[x:0]) pass through input registers controlled by the rising edge of the input clocks (K and K). All synchronous data outputs (Q[x:0]) pass through output registers controlled by the rising edge of the output clocks (C/C or K/K when in single-clock mode). All synchronous control (R/W, LD, BWS[0:X]) inputs pass through input registers controlled by the rising edge of the input clock (K). CY7C1393JV18 is described in the following sections. The same basic descriptions apply to CY7C1394JV18. Read Operations The CY7C1393JV18 is organized internally as two arrays of 512K x 18. Accesses are completed in a burst of two sequential 18-bit data words. Read operations are initiated by asserting R/W HIGH and LD LOW at the rising edge of the positive input clock (K). The address presented to address inputs is stored in the read address register. Following the next K clock rise, the corresponding lowest order 18-bit word of data is driven onto the Q[17:0] using C as the output timing reference. On the subsequent rising edge of C, the next 18-bit data word is driven onto the Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the output clock (C/C, or K/K when in single clock mode). Read accesses are initiated on every rising edge of the positive input clock (K). This pipelines the data flow such that data is transferred out of the device on every rising edge of the output clocks, C/C (or K/K when in single clock mode). The CY7C1393JV18 first completes the pending read transactions, when read access is deselected. Synchronous internal circuitry automatically tri-states the output following the next rising edge of the positive output clock (C). Write Operations Write operations are initiated by asserting R/W LOW and LD LOW at the rising edge of the positive input clock (K). The address presented to address inputs is stored in the write address register. On the following K clock rise the data presented to D[17:0] is latched and stored into the 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative input clock (K) the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. The 36 bits of data are then written into the memory array at the specified location. Write accesses are initiated on every rising edge of the positive Document #: 001-44698 Rev. *C input clock (K). This pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K). When Write access is deselected, the device ignores all inputs after the pending write operations are completed. Byte Write Operations Byte write operations are supported by the CY7C1393JV18. A write operation is initiated as described in the section Write Operations on page 6. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate Byte Write Select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the Byte Write Select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature is used to simplify read, modify, and write operations to a byte write operation. Single Clock Mode The CY7C1393JV18 is used with a single clock that controls both the input and output registers. In this mode the device recognizes only a single pair of input clocks (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remain the same in this mode. To use this mode of operation, tie C and C HIGH at power on. This function is a strap option and not alterable during device operation. DDR Operation The CY7C1393JV18 enables high performance operation through high clock frequencies (achieved through pipelining) and double data rate mode of operation. If a read occurs after a write cycle, address and data for the write are stored in registers. Store the write information because the SRAM cannot perform the last word write to the array without conflicting with the read. The data stays in this register until the next write cycle occurs. On the first write cycle after the reads, the stored data from the earlier write is written into the SRAM array. This is called a posted write. Depth Expansion Depth expansion requires replicating the LD control signal for each bank. All other control signals are common between banks as appropriate. Programmable Impedance Connect an external resistor, RQ, between the ZQ pin on the SRAM and VSS to enable the SRAM to adjust its output driver impedance. The value of RQ is five times the value of the intended line impedance driven by the SRAM. The allowable range of RQ to guarantee impedance matching with a tolerance of ±15 percent is between 175Ω and 350Ω, with VDDQ = 1.5V. The output impedance is adjusted every 1024 cycles at power up to account for drifts in supply voltage and temperature. Page 6 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Echo Clocks DLL Echo clocks are provided on the DDR II to simplify data capture on high speed systems. Two echo clocks are generated by the DDR II. CQ is referenced with respect to C and CQ is referenced with respect to C. These are free running clocks and are synchronized to the output clock of the DDR II. In the single clock mode, CQ is generated with respect to K and CQ is generated with respect to K. The timing for the echo clocks is shown in Switching Characteristics on page 20. These chips use a Delay Lock Loop (DLL) that is designed to function between 120 MHz and the specified maximum clock frequency. During power up, when the DOFF is tied HIGH, the DLL is locked after 1024 cycles of stable clock. The DLL is also reset by slowing or stopping the input clocks K and K for a minimum of 30 ns. However, it is not necessary to reset the DLL to lock it to the desired frequency. The DLL automatically locks 1024 clock cycles after a stable clock is presented. Disable the DLL by applying ground to the DOFF pin. When the DLL is turned off, the device behaves in DDR I mode (with one cycle latency and a longer access time). For information refer to the application note AN5062 ‘DLL Considerations in QDRII/DDRII/QDRII+/DDRII+’. Application Example Figure 1 shows four DDR II SIO used in an application. Figure 1. Application Example SRAM 1 Vt D R BUS MASTER (CPU or ASIC) A B WB S LD R/W W LDR/W ## ## ## DATA IN DATA OUT Address LD# R/W# BWS# ZQ Q CQ CQ# C C# K K# SRAM 4 R = 250Ohms B W LD R/W S # # # D A R ZQ Q CQ CQ# C C# K K# R = 250Ohms Vt Vt SRAM 1 Input CQ SRAM 1 Input CQ# SRAM 4 Input CQ SRAM 4 Input CQ# Source K Source K# Delayed K Delayed K# R Document #: 001-44698 Rev. *C R = 50Ohms Vt = VREF Page 7 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Truth Table The truth table for CY7C1393JV18, and CY7C1394JV18 follows. [2, 3, 4, 5, 6, 7] Operation K LD R/W Write Cycle: Load address; wait one cycle; input write data on consecutive K and K rising edges. L-H L L D(A + 0) at K(t + 1)↑ D(A + 1) at K(t + 1)↑ Read Cycle: Load address; wait one and a half cycle; read data on consecutive C and C rising edges. L-H L H Q(A + 0) at C(t + 1)↑ Q(A + 1) at C(t + 2)↑ NOP: No Operation L-H H X High Z High Z Stopped X X Previous State Previous State Standby: Clock Stopped DQ DQ Write Cycle Descriptions The write cycle description table for CY7C1393JV18 follows. [2, 8] BWS0 BWS1 K K L L L–H – L L – L H L–H L H – H L L–H H L – H H L–H H H – Comments During the data portion of a write sequence: Both bytes (D[17:0]) are written into the device. L-H During the data portion of a write sequence: Both bytes (D[17:0]) are written into the device. – During the data portion of a write sequence: Only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. L–H During the data portion of a write sequence: Only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. – During the data portion of a write sequence: Only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. L–H During the data portion of a write sequence: Only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. – No data is written into the devices during this portion of a write operation. L–H No data is written into the devices during this portion of a write operation. Notes 2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, ↑represents rising edge. 3. Device powers up deselected with the outputs in a tri-state condition. 4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst. 5. “t” represents the cycle at which a Read/Write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle. 6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode. 7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 8. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. BWS0, BWS1, BWS2 and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved. Document #: 001-44698 Rev. *C Page 8 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Write Cycle Descriptions The write cycle description table for CY7C1394JV18 follows. [2, 8] BWS0 BWS1 BWS2 BWS3 K K Comments L L L L L–H – During the data portion of a write sequence, all four bytes (D[35:0]) are written into the device. L L L L – L H H H L–H L H H H – H L H H L–H H L H H – H H L H L–H H H L H – H H H L L–H H H H L – H H H H L–H H H H H – Document #: 001-44698 Rev. *C L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into the device. – During the data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. – During the data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. – During the data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. – During the data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. – No data is written into the device during this portion of a write operation. L–H No data is written into the device during this portion of a write operation. Page 9 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 IEEE 1149.1 Serial Boundary Scan (JTAG) Instruction Register These SRAMs incorporate a serial boundary scan Test Access Port (TAP) in the FBGA package. This part is fully compliant with IEEE Standard 1149.1-2001. The TAP operates using JEDEC standard 1.8V IO logic levels. Three-bit instructions are serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins, as shown in on page 13. Upon power up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state, as described in the previous section. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, tie TCK LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternatively be connected to VDD through a pull up resistor. Leave TDO unconnected. Upon power up, the device comes up in a reset state, which does not interfere with the operation of the device. Test Access Port—Test Clock The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. Leave this pin unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI pin is used to serially input information into the registers and is connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see the TAP Controller State Diagram on page 12. TDI is internally pulled up and is unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) on any register. Test Data-Out (TDO) The TDO output pin is used to serially clock data out from the registers. The output is active, depending upon the current state of the TAP state machine (see Instruction Codes on page 15). The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. Performing a TAP Reset A reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This reset does not affect the operation of the SRAM and is performed while the SRAM is operating. At power up, the TAP is reset internally to ensure that TDO comes up in a High Z state. TAP Registers Registers are connected between the TDI and TDO pins to scan the data in and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binar ‘01’ pattern to enable the fault isolation of the board level serial test path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This enables shifting of data through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all of the input and output pins on the SRAM. Several No Connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The boundary scan register is loaded with the contents of the RAM input and output ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions are used to capture the contents of the input and output ring. The Boundary Scan Order on page 16 shows the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and is shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in Identification Register Definitions on page 15. TAP Instruction Set Eight different instructions are possible with the three-bit instruction register. All combinations are listed in Instruction Codes on page 15. Do not use three of these instructions that are listed as RESERVED. The other five instructions are described in this section in detail. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction after it is shifted in, move the TAP controller into the Update-IR state. IDCODE The IDCODE instruction loads a vendor-specific, 32-bit code into the instruction register. It also places the instruction register Document #: 001-44698 Rev. *C Page 10 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 between the TDI and TDO pins and shifts the IDCODE out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register at power up or whenever the TAP controller is supplied a Test-Logic-Reset state. SAMPLE Z BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. EXTEST The SAMPLE Z instruction connects the boundary scan register between the TDI and TDO pins when the TAP controller is in a Shift-DR state. The SAMPLE Z command puts the output bus into a High Z state until the next command is supplied during the Update IR state. The EXTEST instruction drives the preloaded data out through the system output pins. This instruction also connects the boundary scan register for serial access between the TDI and TDO in the Shift-DR controller state. SAMPLE/PRELOAD EXTEST OUTPUT BUS TRI-STATE SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the input and output pins is captured in the boundary scan register. IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tri-state mode. The TAP controller clock only operates at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output undergoes a transition. The TAP then tries to capture a signal while in transition (metastable state). This does not harm the device, but there is no guarantee as to the value that is captured. Repeatable results may not be possible. To guarantee that the boundary scan register captures the correct value of a signal, stabilize the SRAM signal long enough to meet the TAP controller's capture setup plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the boundary scan register. After the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. The boundary scan register has a special bit located at bit 47. When this scan cell, called the ‘extest output bus tri-state’, is latched into the preload register during the Update-DR state in the TAP controller, it directly controls the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it enables the output buffers to drive the output bus. When LOW, this bit places the output bus into a High Z condition. This bit is set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the Shift-DR state. During Update-DR, the value loaded into that shift-register cell latches into the preload register. When the EXTEST instruction is entered, this bit directly controls the output Q-bus pins. Note that this bit is pre-set LOW to enable the output when the device is powered up, and also when the TAP controller is in the Test-Logic-Reset state. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. The shifting of data for the SAMPLE and PRELOAD phases occurs concurrently when required, that is, while the data captured is shifted out, the preloaded data is shifted in. Document #: 001-44698 Rev. *C Page 11 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 TAP Controller State Diagram The state diagram for the TAP controller follows. [9] 1 TEST-LOGIC RESET 0 0 TEST-LOGIC/ IDLE 1 SELECT DR-SCAN 1 1 SELECT IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 SHIFT-DR 0 SHIFT-IR 1 1 EXIT1-DR 1 EXIT1-IR 0 1 0 PAUSE-DR 0 PAUSE-IR 1 0 1 0 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 0 0 1 0 Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 001-44698 Rev. *C Page 12 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 TAP Controller Block Diagram 0 Bypass Register 2 Selection Circuitry TDI 1 0 Selection Circuitry Instruction Register 31 30 29 . . 2 1 0 1 0 TDO Identification Register 106 . . . . 2 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics Over the Operating Range [10, 11, 12] Parameter Description Test Conditions Min Max Unit VOH1 Output HIGH Voltage IOH = −2.0 mA 1.4 V VOH2 Output HIGH Voltage IOH = −100 μA 1.6 V VOL1 Output LOW Voltage IOL = 2.0 mA 0.4 V VOL2 Output LOW Voltage IOL = 100 μA 0.2 V VIH Input HIGH Voltage VIL Input LOW Voltage IX Input and Output Load Current 0.65VDD VDD + 0.3 GND ≤ VI ≤ VDD V –0.3 0.35VDD V –5 5 μA Notes 10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table. 11. Overshoot: VIH(AC) < VDDQ + 0.85V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > −1.5V (Pulse width less than tCYC/2). 12. All Voltage referenced to Ground. Document #: 001-44698 Rev. *C Page 13 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 TAP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min Max Unit 20 MHz tTCYC TCK Clock Cycle Time tTF TCK Clock Frequency 50 ns tTH TCK Clock HIGH 20 ns tTL TCK Clock LOW 20 ns tTMSS TMS Setup to TCK Clock Rise 5 ns tTDIS TDI Setup to TCK Clock Rise 5 ns tCS Capture Setup to TCK Rise 5 ns Setup Times Hold Times tTMSH TMS Hold after TCK Clock Rise 5 ns tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Output Times tTDOV TCK Clock LOW to TDO Valid tTDOX TCK Clock LOW to TDO Invalid 10 0 ns ns TAP Timing and Test Conditions Figure 2 shows the TAP timing and test conditions. [14] Figure 2. TAP Timing and Test Conditions 0.9V ALL INPUT PULSES 1.8V 50Ω 0.9V TDO 0V Z0 = 50Ω (a) CL = 20 pF tTH GND tTL Test Clock TCK tTCYC tTMSH tTMSS Test Mode Select TMS tTDIS tTDIH Test Data In TDI Test Data Out TDO tTDOV tTDOX Notes 13. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 14. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document #: 001-44698 Rev. *C Page 14 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Identification Register Definitions Value Instruction Field Description CY7C1393JV18 CY7C1394JV18 000 000 Cypress Device ID (28:12) 11010100010010101 11010100010100101 Cypress JEDEC ID (11:1) 00000110100 00000110100 Allows unique identification of SRAM vendor. ID Register Presence (0) 1 1 Indicates the presence of an ID register. Revision Number (31:29) Version number. Defines the type of SRAM. Scan Register Sizes Register Name Bit Size Instruction 3 Bypass 1 ID 32 Boundary Scan 107 Instruction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. SAMPLE Z 010 Captures the input and output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOA D 100 Captures the input and output ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document #: 001-44698 Rev. *C Page 15 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 2J 1 6P 29 9G 57 5B 85 3K 2 6N 30 11F 58 5A 86 3J 3 7P 31 11G 59 4A 87 2K 4 7N 32 9F 60 5C 88 1K 5 7R 33 10F 61 4B 89 2L 6 8R 34 11E 62 3A 90 3L 7 8P 35 10E 63 1H 91 1M 8 9R 36 10D 64 1A 92 1L 9 11P 37 9E 65 2B 93 3N 10 10P 38 10C 66 3B 94 3M 11 10N 39 11D 67 1C 95 1N 12 9P 40 9C 68 1B 96 2M 13 10M 41 9D 69 3D 97 3P 14 11N 42 11B 70 3C 98 2N 15 9M 43 11C 71 1D 99 2P 16 9N 44 9B 72 2C 100 1P 17 11L 45 10B 73 3E 101 3R 18 11M 46 11A 74 2D 102 4R 19 9L 47 Internal 75 2E 103 4P 20 10L 48 9A 76 1E 104 5P 21 11K 49 8B 77 2F 105 5N 22 10K 50 7C 78 3F 106 5R 23 9J 51 6C 79 1G 24 9K 52 8A 80 1F 25 10J 53 7A 81 3G 26 11J 54 7B 82 2G 27 11H 55 6B 83 1J Document #: 001-44698 Rev. *C Page 16 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Power Up Sequence in DDR II SRAM Power up and initialize DDR II SRAMs in a predefined manner to prevent undefined operations. Power Up Sequence ■ Apply power and drive DOFF either HIGH or LOW (All other inputs are HIGH or LOW). ❐ Apply VDD before VDDQ. ❐ Apply VDDQ before VREF or at the same time as VREF. ❐ Drive DOFF HIGH. ■ Provide stable DOFF (HIGH), power and clock (K, K) for 1024 cycles to lock the DLL. DLL Constraints ■ DLL uses K clock as its synchronizing input. The input has low phase jitter, which is specified as tKC Var. ■ The DLL functions at frequencies down to 120 MHz. ■ If the input clock is unstable and the DLL is enabled, then the DLL may lock onto an incorrect frequency, causing unstable SRAM behavior. To avoid this, provide1024 cycles stable clock to relock to the desired clock frequency. ~ ~ Figure 3. Power Up Waveforms K K ~ ~ Unstable Clock > 1024 Stable clock Start Normal Operation Clock Start (Clock Starts after V DD / V DDQ Stable) VDD / VDDQ DOFF Document #: 001-44698 Rev. *C V DD / V DDQ Stable (< +/- 0.1V DC per 50ns ) Fix High (or tie to VDDQ) Page 17 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Maximum Ratings Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied.. –55°C to +125°C Supply Voltage on VDD Relative to GND ........–0.5V to +2.9V Neutron Soft Error Immunity Parameter DC Input Voltage [11] Operating Range Range Commercial Industrial Ambient Temperature (TA) VDD [15] VDDQ [15] 0°C to +70°C 1.8 ± 0.1V 1.4V to VDD –40°C to +85°C Max* Unit 25°C 320 368 FIT/ Mb LMBU Logical Multi-Bit Upsets 25°C 0 0.01 FIT/ Mb Single Event Latchup 85°C 0 0.1 FIT/ Dev SEL Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V Latch-up Current.................................................... > 200 mA Typ Logical Single-Bit Upsets .............................. –0.5V to VDD + 0.3V Current into Outputs (LOW)......................................... 20 mA Test Conditions LSBU Supply Voltage on VDDQ Relative to GND.......–0.5V to +VDD DC Applied to Outputs in High Z ........ –0.5V to VDDQ + 0.3V Description * No LMBU or SEL events occurred during testing; this column represents a statistical χ2, 95% confidence limit calculation. For more details refer to Application Note AN 54908 “Accelerated Neutron SER Testing and Calculation of Terrestrial Failure Rates” Electrical Characteristics DC Electrical Characteristics Over the Operating Range [12] Parameter VDD VDDQ VOH VOL VOH(LOW) VOL(LOW) VIH VIL IX IOZ VREF IDD [19] Description Power Supply Voltage IO Supply Voltage Output HIGH Voltage Output LOW Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current Input Reference Voltage [18] VDD Operating Supply ISB1 Automatic Power down Current Test Conditions Note 16 Note 17 IOH = −0.1 mA, Nominal Impedance IOL = 0.1 mA, Nominal Impedance GND ≤ VI ≤ VDDQ GND ≤ VI ≤ VDDQ, Output Disabled Typical Value = 0.75V VDD = Max, 300 MHz (x18) IOUT = 0 mA, (x36) f = fMAX = 1/tCYC 250 MHz (x18) (x36) Max VDD, 300 MHz (x18) Both Ports Deselected, (x36) VIN ≥ VIH or VIN ≤ VIL 250 MHz (x18) f = fMAX = 1/tCYC, Inputs Static (x36) Min Typ Max Unit 1.7 1.8 1.9 V 1.4 1.5 VDD V VDDQ/2 – 0.12 VDDQ/2 + 0.12 V VDDQ/2 – 0.12 VDDQ/2 + 0.12 V VDDQ – 0.2 VDDQ V VSS 0.2 V VREF + 0.1 VDDQ + 0.3 V –0.3 VREF – 0.1 V −5 5 μA −5 5 μA 0.68 0.75 0.95 V 865 mA 935 725 770 285 mA 300 260 275 Notes 15. Power up: assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 16. Outputs are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω. 17. Outputs are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω. 18. VREF(min) = 0.68V or 0.46VDDQ, whichever is larger, VREF(max) = 0.95V or 0.54VDDQ, whichever is smaller. 19. The operation current is calculated with 50% read cycle and 50% write cycle. Document #: 001-44698 Rev. *C Page 18 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 AC Electrical Characteristics Over the Operating Range [11] Parameter Description Test Conditions Min Typ Max Unit VIH Input HIGH Voltage VREF + 0.2 – – V VIL Input LOW Voltage – – VREF – 0.2 V Capacitance Tested initially and after any design or process change that may affect these parameters. Parameter Description Max Unit 5 pF Clock Input Capacitance 6 pF Output Capacitance 7 pF CIN Input Capacitance CCLK CO Test Conditions TA = 25°C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V Thermal Resistance Tested initially and after any design or process change that may affect these parameters. Parameter Description ΘJA Thermal Resistance (Junction to Ambient) ΘJC Thermal Resistance (Junction to Case) Test Conditions 165 FBGA Package Unit Test conditions follow standard test methods and procedures for measuring thermal impedance, in accordance with EIA/JESD51. 18.7 °C/W 4.5 °C/W Figure 4. AC Test Loads and Waveforms VREF = 0.75V VREF 0.75V VREF OUTPUT Z0 = 50Ω Device Under Test RL = 50Ω VREF = 0.75V ZQ R = 50Ω ALL INPUT PULSES 1.25V 0.75V OUTPUT Device Under Test ZQ RQ = 250Ω (a) 0.75V INCLUDING JIG AND SCOPE 5 pF [20] 0.25V Slew Rate = 2 V/ns RQ = 250Ω (b) Note 20. Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250Ω, VDDQ = 1.5V, input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads and Waveforms. Document #: 001-44698 Rev. *C Page 19 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Switching Characteristics Over the Operating Range [20, 21] Cypress Consortium Parameter Parameter 300 MHz Description Min Max Min Max VDD(Typical) to the First Access [22] tPOWER 250 MHz 1 1 Unit ms tCYC tKHKH K Clock and C Clock Cycle Time 3.3 8.4 4.0 8.4 ns tKH tKHKL Input Clock (K/K; C/C) HIGH 1.32 – 1.6 – ns tKL tKLKH Input Clock (K/K; C/C) LOW 1.32 – 1.6 – ns tKHKH tKHKH K Clock Rise to K Clock Rise and C to C Rise (rising edge to rising edge) 1.49 tKHCH tKHCH K/K Clock Rise to C/C Clock Rise (rising edge to rising edge) – 1.8 – ns 0 1.45 0 1.8 ns – 0.5 – ns Setup Times tSA tAVKH Address Setup to K Clock Rise 0.4 tSC tIVKH Control Setup to K Clock Rise (LD, R/W) 0.4 – 0.5 – ns tSCDDR tIVKH Double Data Rate Control Setup to Clock (K/K) Rise (BWS0, BWS1, BWS2, 0.3 BWS3) – 0.35 – ns tSD tDVKH D[X:0] Setup to Clock (K/K) Rise 0.3 – 0.35 – ns Hold Times tHA tKHAX Address Hold after K Clock Rise 0.4 – 0.5 – ns tHC tKHIX Control Hold after K Clock Rise (LD, R/W) 0.4 – 0.5 – ns tHCDDR tKHIX Double Data Rate Control Hold after Clock (K/K) Rise (BWS0, BWS1, BWS2, BWS3) 0.3 – 0.35 – ns tHD tKHDX D[X:0] Hold after Clock (K/K) Rise 0.3 – 0.35 – ns Output Times tCO tCHQV C/C Clock Rise (or K/K in single clock mode) to Data Valid tDOH tCHQX Data Output Hold after Output C/C Clock Rise (Active to Active) tCCQO tCHCQV C/C Clock Rise to Echo Clock Valid tCQOH tCHCQX Echo Clock Hold after C/C Clock Rise tCQD tCQHQV Echo Clock High to Data Valid tCQDOH tCQHQX Echo Clock High to Data Invalid tCQH tCQHCQH tCQHCQL tCQHCQH Output Clock (CQ/CQ) HIGH CQ Clock Rise to CQ Clock Rise (rising edge to rising edge) tCHQZ Clock (C/C) Rise to High Z (Active to High Z) tCLZ tCHQX1 Clock (C/C) Rise to Low Z [24, 25] 0.45 – 0.45 ns – –0.45 – ns – 0.45 – 0.45 ns –0.45 – –0.45 – ns 0.27 [23] tCHZ – –0.45 [24, 25] [23] 0.30 ns –0.27 – –0.30 – ns 1.24 – 1.55 – ns 1.24 – 1.55 – ns – 0.45 – 0.45 ns –0.45 – –0.45 – ns – 0.20 – 0.20 ns – 1024 – Cycles DLL Timing tKC Var tKC Var Clock Phase Jitter tKC lock tKC lock DLL Lock Time (K, C) 1024 tKC Reset tKC Reset K Static to DLL Reset 30 30 ns Notes 21. When a part with a maximum frequency above 250 MHz is operating at a lower clock frequency, it requires the input timing of the frequency range in which it is being operated and outputs data with the output timings of that frequency range. 22. This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD minimum initially before a read or write operation can be initiated. 23. These parameters are extrapolated from the input timing parameters (tKHKH - 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (tKC Var) is already included in the tKHKH). These parameters are only guaranteed by design and are not tested in production 24. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads and Waveforms on page 19. Transition is measured ± 100 mV from steady-state voltage. 25. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO. Document #: 001-44698 Rev. *C Page 20 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Switching Waveforms Figure 5. Read/Write/Deselect Sequence [26, 27, 28] NOP READ (burst of 2) 2 1 READ (burst of 2) 3 WRITE (burst of 2) 5 WRITE (burst of 2) 4 READ (burst of 2) 6 NOP 7 8 K tKH tCYC tKL tKHKH K LD t SC tHC R/W A A0 tSA A1 A2 A3 A4 tHD tHD tHA tSD tSD D D20 Q00 Q t KHCH t Q01 tCQD t CLZ Q10 D21 D31 Q11 Q40 Q41 tDOH KHCH tCO D30 t CHZ tCQDOH C tKH tCYC tKL tKHKH C# tCQOH tCCQO CQ tCQOH tCCQO tCQH tCQHCQH CQ# DON’T CARE UNDEFINED Notes 26. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1. 27. Outputs are disabled (High Z) one clock cycle after a NOP. 28. In this example, if address A4 = A3, then data Q40 = D30 and Q41 = D31. Write data is forwarded immediately as read results. This note applies to the whole diagram. Document #: 001-44698 Rev. *C Page 21 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Ordering Information The table below contains only the parts that are currently available. If you don’t see what you are looking for, please contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices Table 1. Ordering Information Speed (MHz) 300 Ordering Code CY7C1393JV18-300BZXC Package Diagram Package Type Operating Range 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free Commercial Package Diagram Figure 6. 165-Ball FBGA (13 x 15 x 1.4 mm) 51-85180 *B Document #: 001-44698 Rev. *C Page 22 of 23 [+] Feedback CY7C1393JV18 CY7C1394JV18 Document History Page Document Title: CY7C1393JV18/CY7C1394JV18, 18 Mbit DDR II SIO SRAM Two Word Burst Architecture Document Number: 001-44698 Revision ECN Orig. of Change Submission Description of Change Date ** 2192568 VKN/PYRS See ECN New datasheet *A 2561974 VKN/PYRS 09/04/08 Converted from preliminary to final, Added 250 MHz speed bin, Changed JTAG ID [31:29] from 001 to 000, Updated power up sequence waveform and its description, Changed Ambient Temperature with Power Applied from “–10°C to +85°C” to “–55°C to +125°C” in the “Maximum Ratings “ on page 20, Changed ΘJA and ΘJC from 28.51 and 5.91 °C/W to 18.7 and 4.5 °C/W respectively. *B 2748221 NJY 08/04/09 Updated package diagram Post to external web *C 2755901 VKN 08/25/09 Removed x8 and x9 part number details Included Soft Error Immunity Data Modified Ordering Information table by including parts that are available and modified the disclaimer for the Ordering information. Updated Package Diagram. Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress.com/sales. Products PSoC Clocks & Buffers psoc.cypress.com clocks.cypress.com Wireless wireless.cypress.com Memories memory.cypress.com Image Sensors image.cypress.com © Cypress Semiconductor Corporation, 2008-2009. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign), United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without the express written permission of Cypress. Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document #: 001-44698 Rev. *C Revised August 25, 2009 Page 23 of 23 QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document are the trademarks of their respective holders. [+] Feedback