CY7C1399BN
256-Kbit (32 K × 8) Static RAM
256-Kbit (32 K × 8) Static RAM
Features
Functional Description
■
Temperature Ranges
❐ Industrial: –40 °C to 85 °C
❐ Commercial: 0 °C to 70 °C
❐ Automotive-A: –40 °C to 85 °C
The CY7C1399BN is a high-performance 3.3 V CMOS Static
RAM organized as 32,768 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE) and
active LOW Output Enable (OE) and tristate drivers. The device
has an automatic power-down feature, reducing the power
consumption by more than 95% when deselected.
■
Single 3.3 V power supply
■
Ideal for low-voltage cache memory applications
■
High speed: 12 ns
■
Low active power
❐ 180 mW (max)
■
Low-power alpha immune 6T cell
■
Available in pb-free and non pb-free plastic SOJ and TSOP- I
packages
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O0 through I/O7) is written into the memory location addressed
by the address present on the address pins (A0 through A14).
Reading the device is accomplished by selecting the device and
enabling the outputs, CE and OE active LOW, while WE remains
inactive or HIGH. Under these conditions, the contents of the
location addressed by the information on address pins is present
on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable (WE)
is HIGH. The CY7C1399BN is available in 28-pin standard
300-mil-wide SOJ and TSOP Type I packages.
For a complete list of related documentation, click here.
Logic Block Diagram
g
I/O0
INPUT BUFFER
I/O1
ROW DECODER
I/O2
SENSE AMPS
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
32K x 8
ARRAY
I/O3
I/O4
I/O5
CE
WE
POWER
DOWN
COLUMN
DECODER
I/O7
•
A 14
A 12
A 13
A 11
A 10
OE
Cypress Semiconductor Corporation
Document Number: 001-06490 Rev. *I
I/O6
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised January 4, 2018
CY7C1399BN
Contents
Pin Configurations ........................................................... 3
Selection Guide ................................................................ 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 5
Data Retention Waveform ................................................ 5
Switching Characteristics ................................................ 6
Switching Waveforms ...................................................... 7
Truth Table ...................................................................... 10
Ordering Information ...................................................... 11
Ordering Code Definitions ......................................... 11
Document Number: 001-06490 Rev. *I
Package Diagrams .......................................................... 12
Acronyms ........................................................................ 14
Document Conventions ................................................. 14
Units of Measure ....................................................... 14
Document History Page ................................................. 15
Sales, Solutions, and Legal Information ...................... 16
Worldwide Sales and Design Support ....................... 16
Products .................................................................... 16
PSoC® Solutions ....................................................... 16
Cypress Developer Community ................................. 16
Technical Support ..................................................... 16
Page 2 of 16
CY7C1399BN
Pin Configurations
Figure 1. 28-pin TSOP pinout (Top View)
TSOP
Top View
OE
A1
A2
A3
A4
WE
VCC
A5
A6
A7
A8
A9
A10
A11
21
22
23
20
19
18
17
16
15
14
13
12
11
10
9
8
24
25
26
27
28
1
2
3
4
5
6
7
A0
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A14
A13
A12
Figure 2. 28-pin SOJ pinout (Top View)
SOJ
Top View
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A4
A3
A2
A1
OE
A0
CE
I/O7
I/O6
I/O5
I/O4
I/O3
Selection Guide
Description
Condition
Maximum access time (ns)
Maximum operating current (mA)
Maximum CMOS standby current (A)
Commercial
-15
12
15
55
50
500
–
Commercial (L)
50
–
Industrial
500
500
–
500
Automotive-A
Document Number: 001-06490 Rev. *I
-12
Page 3 of 16
CY7C1399BN
Maximum Ratings
Output current into outputs (LOW) ............................. 20 mA
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Ambient temperature with
power applied .......................................... –55 C to +125 C
Supply voltage on
VCC to relative GND [1] ................................–0.5 V to +4.6 V
DC voltage applied to outputs
in high Z State [1] ................................. –0.5 V to VCC + 0.5 V
DC input voltage [1] ............................. –0.5 V to VCC + 0.5 V
Static discharge voltage
(per MIL-STD-883, Method 3015) .......................... >2001 V
Latch-up current .................................................... >200 mA
Operating Range
Range
Ambient Temperature
VCC
0C to +70C
3.3 V 300 mV
Commercial
Industrial
–40C to +85C
Automotive-A
–40C to +85C
Electrical Characteristics
Over the Operating Range
Parameter [1]
Description
Test Conditions
VOH
Output HIGH voltage
Min VCC, IOH = –2.0 mA
Min VCC, IOL = 4.0 mA
-12
-15
Unit
Min
Max
Min
Max
2.4
–
2.4
–
V
VOL
Output LOW voltage
–
0.4
–
0.4
V
VIH
Input HIGH voltage
2.2
VCC + 0.3
2.2
VCC + 0.3
V
VIL[1]
Input LOW voltage
–0.3
0.8
–0.3
0.8
V
IIX
Input leakage current
–1
+1
–1
+1
A
IOZ
Output leakage current
GND VIN VCC, Output disabled
–5
+5
–5
+5
A
ICC
VCC operating supply current
Max VCC, IOUT = 0 mA,
f = fMAX = 1/tRC
–
55
–
50
mA
ISB1
Automatic CE power-down
current – TTL inputs
Max VCC, CE VIH, Commercial
VIN VIH, or
Commercial (L)
VIN VIL,
f = fMAX
Industrial
Automotive-A
ISB2
Automatic CE Power-down
current – CMOS inputs [2]
–
5
–
–
mA
–
4
–
–
mA
–
5
–
5
mA
–
–
–
5
mA
Max VCC,
Commercial
–
500
–
–
A
CE VCC – 0.3 V,
Commercial (L)
–
50
–
–
A
–
500
–
500
A
–
–
–
500
A
Industrial
VIN VCC – 0.3 V, or
Automotive-A
VIN 0.3 V,
WE VCC – 0.3 V or
WE 0.3 V,
f = fMAX
Notes
1. Minimum voltage is equal to – 2.0 V for pulse durations of less than 20 ns.
2. Device draws low standby current regardless of switching on the addresses.
Document Number: 001-06490 Rev. *I
Page 4 of 16
CY7C1399BN
Capacitance
Parameter [3]
Description
Test Conditions
CIN: Addresses Input capacitance
Max
Unit
5
pF
6
pF
6
pF
TA = 25C, f = 1 MHz, VCC = 3.3 V
CIN: Controls
Output capacitance
COUT
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms [4]
R1 317
3.3 V
ALL INPUT PULSES
3.0 V
OUTPUT
INCLUDING
JIG AND
SCOPE
CL
R2
351
10%
GND
90%
90%
10%
Equivalent to:
THÉVENINEQUIVALENT
167
OUTPUT
1.73 V
3 ns
3 ns
Data Retention Characteristics
(Over the Operating Range - L version only)
Parameter
Description
Conditions
VDR
VCC for data retention
ICCDR
Data retention current
tCDR
Chip deselect to data retention
time
tR
Operation recovery time
Min
VCC = VDR = 2.0 V,
CE > VCC – 0.3 V,
VIN > VCC – 0.3 V or VIN < 0.3 V
Max
Unit
2.0
–
V
0
20
A
0
–
ns
tRC
–
ns
Data Retention Waveform
Figure 4. Data Retention Waveform
DATA RETENTION MODE
VCC
3.0 V
tCDR
VDR 2 V
3.0 V
tR
CE
Notes
3. Tested initially and after any design or process changes that may affect these parameters.
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified IOL/IOH
and capacitance CL = 30 pF.
Document Number: 001-06490 Rev. *I
Page 5 of 16
CY7C1399BN
Switching Characteristics
Over the Operating Range
Parameter [5]
Description
-12
-15
Min
Max
Min
Max
Unit
Read Cycle
tRC
Read cycle time
12
–
15
–
ns
tAA
Address to data valid
–
12
–
15
ns
tOHA
Data hold from address change
3
–
3
–
ns
tACE
CE LOW to data valid
–
12
–
15
ns
tDOE
OE LOW to data valid
–
5
–
6
ns
0
–
0
–
ns
–
5
–
6
ns
tLZOE
tHZOE
OE LOW to low Z
[6]
OE HIGH to high Z
[6, 7]
[6]
tLZCE
CE LOW to low Z
3
–
3
–
ns
tHZCE
CE HIGH to high Z [6, 7]
–
6
–
7
ns
tPU
CE LOW to power-up
0
–
0
–
ns
CE HIGH to power-down
–
12
–
15
ns
tPD
Write Cycle
[8, 9]
tWC
Write cycle time
12
–
15
–
ns
tSCE
CE LOW to write end
8
–
10
–
ns
tAW
Address setup to write end
8
–
10
–
ns
tHA
Address hold from write end
0
–
0
–
ns
tSA
Address setup to write start
0
–
0
–
ns
tPWE
WE pulse width
8
–
10
–
ns
tSD
Data setup to write end
7
–
8
–
ns
tHD
Data hold from write end
0
–
0
–
ns
tHZWE
WE low to high Z[8]
–
7
–
7
ns
tLZWE
[6]
3
–
3
–
ns
WE high to low Z
Notes
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output loading of the specified IOL/IOH
and capacitance CL = 30 pF.
6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
7. tHZOE, tHZCE, tHZWE are specified with CL = 5 pF as in AC Test Loads. Transition is measured ±500 mV from steady state voltage.
8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
9. The minimum write cycle time for Write Cycle No. 3 (WE Controlled, OE LOW) is the sum of tHZWE and tSD.
Document Number: 001-06490 Rev. *I
Page 6 of 16
CY7C1399BN
Switching Waveforms
Figure 5. Read Cycle No. 1 [10, 11]
tRC
ADDRESS
tAA
tOHA
DATA I/O
PREVIOUS DATA VALID
DATA OUT VALID
Figure 6. Read Cycle No. 2 [11, 12]
tRC
CE
tACE
OE
tHZOE
tHZCE
tDOE
DATA I/O
tLZOE
HIGH IMPEDANCE
tLZCE
VCC
SUPPLY
CURRENT
HIGH
IMPEDANCE
DATA OUT VALID
tPD
tPU
ICC
50%
50%
ISB
Notes
10. Device is continuously selected. OE, CE = VIL.
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE transition LOW.
Document Number: 001-06490 Rev. *I
Page 7 of 16
CY7C1399BN
Switching Waveforms (continued)
Figure 7. Write Cycle No. 1 (WE Controlled) [13, 14, 15]
tWC
ADDRESS
CE
tAW
tHA
tSA
WE
tPWE
OE
tSD
DATA I/O
NOTE 16
tHD
DATA IN VALID
tHZOE
Figure 8. Write Cycle No. 2 (CE Controlled) [13, 14, 15]
tWC
ADDRESS
tSCE
CE
tSA
tAW
tHA
WE
tSD
DATA I/O
tHD
DATA IN VALID
Notes
13. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
14. Data I/O is high impedance if OE = VIH.
15. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
16. During this period, the I/Os are in the output state and input signals should not be applied.
Document Number: 001-06490 Rev. *I
Page 8 of 16
CY7C1399BN
Switching Waveforms (continued)
Figure 9. Write Cycle No. 3 (WE Controlled, OE LOW) [17, 18]
tWC
ADDRESS
CE
tAW
WE
tHA
tSA
tSD
DATA I/O
tHD
DATA IN VALID
NOTE 19
tHZWE
tLZWE
Notes
17. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high-impedance state.
18. The minimum write cycle pulse width should be equal to the sum of tHZWE and tSD.
19. During this period, the I/Os are in the output state and input signals should not be applied.
Document Number: 001-06490 Rev. *I
Page 9 of 16
CY7C1399BN
Truth Table
CE
WE
OE
Input/Output
H
X
X
High Z
Deselect/Power-down
Standby (ISB)
L
H
L
Data Out
Read
Active (ICC)
L
L
X
Data In
Write
Active (ICC)
L
H
H
High Z
Deselect, Output disabled
Active (ICC)
Document Number: 001-06490 Rev. *I
Mode
Power
Page 10 of 16
CY7C1399BN
Ordering Information
Cypress offers other versions of this type of product in many different configurations and features. The following table contains only
the list of parts that are currently available.
For a complete listing of all options, visit the Cypress website at www.cypress.com and refer to the product summary page at
http://www.cypress.com/products or contact your local sales representative.
Cypress maintains a worldwide network of offices, solution centers, manufacturer's representatives and distributors. To find the office
closest to you, visit us at http://www.cypress.com/go/datasheet/offices.
Speed
(ns)
12
Ordering Code
CY7C1399BN-12ZXC
Package
Diagram
51-85071 28-pin TSOP I (Pb-free)
CY7C1399BNL-12ZXC
CY7C1399BN-12VXI
Package Type
Operating
Range
Commercial
28-pin TSOP I (Pb-free)
51-85031 28-pin molded SOJ (Pb-free)
Industrial
Contact your local sales representative regarding availability of these parts.
Ordering Code Definitions
CY 7 C 1 399 BN
L - XX
X X C
Temperature Range: X = C or I or A
C = Commercial
I = Industrial
A = Automotive-A
X = Pb-free
Package Type: X = V or Z
V = 28-pin Molded SOJ
Z = 28-pin TSOP I
Speed: XX = 12 ns or 15 ns
L = Low power
Process Technology:
BN = 0.25 µm
399 = 256-Kb density with data width × 8 bits
Family Code: 1 = Fast Asynchronous SRAM family
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 001-06490 Rev. *I
Page 11 of 16
CY7C1399BN
Package Diagrams
Figure 10. 28-pin SOJ (300 Mils) V28.3 (Molded SOJ V21) Package Outline, 51-85031
51-85031 *F
Document Number: 001-06490 Rev. *I
Page 12 of 16
CY7C1399BN
Package Diagrams (continued)
Figure 11. 28-pin TSOP I (8 × 13.4 × 1.2 mm) Z28 (Standard) Package Outline, 51-85071
51-85071 *J
Document Number: 001-06490 Rev. *I
Page 13 of 16
CY7C1399BN
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CE
Chip Enable
CMOS
Complementary Metal Oxide Semiconductor
°C
degree Celsius
I/O
Input/Output
MHz
megahertz
OE
Output Enable
µA
microampere
SRAM
Static Random Access Memory
mA
milliampere
TSOP
Thin Small Outline Package
mV
millivolt
WE
Write Enable
mW
milliwatt
ns
nanosecond
pF
picofarad
V
volt
W
watt
Document Number: 001-06490 Rev. *I
Symbol
Unit of Measure
Page 14 of 16
CY7C1399BN
Document History Page
Document Title: CY7C1399BN, 256-Kbit (32 K × 8) Static RAM
Document Number: 001-06490
Revision
ECN
Orig. of
Change
Submission
Date
**
423877
NXR
See ECN
New data sheet.
*A
498575
NXR
See ECN
Added Automotive-A range related information in all instances across the
document.
Updated Electrical Characteristics:
Removed IOS parameter and its details.
Updated Ordering Information.
*B
2896382
AJU
03/19/2010
Updated Ordering Information:
Removed obsolete part numbers.
Updated Package Diagrams.
*C
3053362
PRAS
10/08/2010
Updated Ordering Information:
Removed pruned part numbers CY7C1399BNL-15VXC and
CY7C1399BNL-15VXCT.
Added Ordering Code Definitions.
*D
3383869
TAVA
09/26/2011
Rearranged sections for better clarity.
Updated Features:
Added Commercial Temperature Range related information.
Updated Functional Description:
Removed Note “For guidelines on SRAM system design, please refer to the
‘System Design Guidelines’ Cypress application note, available on the internet
at www.cypress.com website.” and its reference.
Updated Switching Waveforms:
Modified the notes in figures under Read cycle and Write cycle sections.
Updated Package Diagrams.
Added Acronyms and Units of Measure.
Updated to new template.
*E
4121360
VINI
09/12/2013
Updated to new template.
Completing Sunset Review.
*F
4540416
VINI
10/16/2014
Updated Switching Waveforms:
Updated Note 18.
Updated Package Diagrams:
spec 51-85071 – Changed revision from *I to *J.
Completing Sunset Review.
*G
4578447
VINI
01/16/2015
Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
Updated Ordering Information:
Removed the prune part numbers CY7C1399BN-12VXC and
CY7C1399BN-15VXA.
Updated Package Diagrams:
spec 51-85031 – Changed revision from *E to *F.
Updated to new template.
*H
4985705
NILE
10/24/2015
No technical updates.
Completing Sunset Review.
*I
6013894
AESATMP9
01/04/2018
Updated logo and copyright.
Document Number: 001-06490 Rev. *I
Description of Change
Page 15 of 16
CY7C1399BN
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC® Solutions
Products
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Automotive
cypress.com/arm
cypress.com/automotive
Clocks & Buffers
Interface
Internet of Things
Memory
cypress.com/clocks
cypress.com/interface
cypress.com/iot
cypress.com/memory
Microcontrollers
cypress.com/mcu
PSoC
cypress.com/psoc
Power Management ICs
Touch Sensing
USB Controllers
Wireless Connectivity
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6 MCU
Cypress Developer Community
Community | Projects | Video | Blogs | Training | Components
Technical Support
cypress.com/support
cypress.com/pmic
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cypress.com/usb
cypress.com/wireless
© Cypress Semiconductor Corporation, 2006-2018. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document,
including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress
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provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification, translation, or compilation
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TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
OR ACCOMPANYING HARDWARE, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. No computing
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such as unauthorized access to or use of a Cypress product. In addition, the products described in these materials may contain design defects or errors known as errata which may cause the product
to deviate from published specifications. To the extent permitted by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any
liability arising out of the application or use of any product or circuit described in this document. Any information provided in this document, including any sample design information or programming
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management, or other uses where the failure of the device or system could cause personal injury, death, or property damage ("Unintended Uses"). A critical component is any component of a device
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shall and hereby do release Cypress from any claim, damage, or other liability arising from or related to all Unintended Uses of Cypress products. You shall indemnify and hold Cypress harmless from
and against all claims, costs, damages, and other liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 001-06490 Rev. *I
Revised January 4, 2018
Page 16 of 16