CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
36-Mbit QDR™-II SRAM 4-Word
Burst Architecture
Features
Functional Description
■
Separate independent read and write data ports
❐ Supports concurrent transactions
■
300 MHz clock for high bandwidth
■
4-word burst for reducing address bus frequency
■
Double Data Rate (DDR) interfaces on both read and write ports
(data transferred at 600 MHz) at 300 MHz
■
Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■
Single multiplexed address input bus latches address inputs
for both read and write ports
■
Separate port selects for depth expansion
■
Synchronous internally self-timed writes
■
Available in x8, x9, x18, and x36 configurations
■
Full data coherency, providing most current data
The CY7C1411AV18, CY7C1426AV18, CY7C1413AV18, and
CY7C1415AV18 are 1.8V Synchronous Pipelined SRAMs,
equipped with QDR™-II architecture. QDR-II architecture
consists of two separate ports to access the memory array. The
read port has dedicated data outputs to support the read operations and the write port has dedicated data inputs to support the
write operations. QDR-II architecture has separate data inputs
and data outputs to completely eliminate the need to
“turn-around” the data bus required with common IO devices.
Access to each port is through a common address bus.
Addresses for read and write addresses are latched on alternate
rising edges of the input (K) clock. Accesses to the QDR-II read
and write ports are completely independent of one another. To
maximize data throughput, read and write ports are equipped
with DDR interfaces. Each address location is associated with
four
8-bit
words
(CY7C1411AV18),
9-bit
words
(CY7C1426AV18), 18-bit words (CY7C1413AV18), or 36-bit
words (CY7C1415AV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus “turn-arounds.”
■
Core VDD = 1.8 (±0.1V); IO VDDQ = 1.4V to VDD
■
Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
■
Offered in both Pb-free and non Pb-free packages
■
Variable drive HSTL output buffers
■
JTAG 1149.1 compatible test access port
■
Delay Lock Loop (DLL) for accurate data placement
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on chip
synchronous self-timed write circuitry.
Configurations
CY7C1411AV18 – 4M x 8
CY7C1426AV18 – 4M x 9
CY7C1413AV18 – 2M x 18
CY7C1415AV18 – 1M x 36
Selection Guide
Description
300 MHz
278 MHz
250 MHz
200 MHz
167 MHz
Unit
300
278
250
200
167
MHz
x8
885
815
745
620
535
mA
x9
900
830
760
620
535
Maximum Operating Frequency
Maximum Operating Current
x18
940
865
790
655
565
x36
1040
950
870
715
615
Cypress Semiconductor Corporation
Document Number: 38-05614 Rev. *D
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 13, 2008
[+] Feedback
CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
Logic Block Diagram (CY7C1411AV18)
DOFF
Write
Reg
Address
Register
Read Add. Decode
1M x 8 Array
K
CLK
Gen.
Write
Reg
1M x 8 Array
K
Write
Reg
1M x 8 Array
Address
Register
Write
Reg
1M x 8 Array
A(19:0)
20
8
Write Add. Decode
D[7:0]
20
A(20:0)
RPS
Control
Logic
C
Read Data Reg.
C
CQ
32
VREF
WPS
16
Control
Logic
Reg.
16
NWS[1:0]
Reg.
CQ
Reg. 8
8
8
8
8
Q[7:0]
Logic Block Diagram (CY7C1426AV18)
9
A(19:0)
20
Write
Reg
1M x 9 Array
DOFF
Write
Reg
1M x 9 Array
K
CLK
Gen.
Write
Reg
1M x 9 Array
K
1M x 9 Array
Address
Register
Write Add. Decode
Write
Reg
Address
Register
Read Add. Decode
D[8:0]
20
A(19:0)
RPS
Control
Logic
Read Data Reg.
C
C
CQ
36
VREF
WPS
18
Control
Logic
BWS[0]
Document Number: 38-05614 Rev. *D
18
Reg.
Reg.
Reg. 9
9
9
9
CQ
9
Q[8:0]
Page 2 of 31
[+] Feedback
CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
Logic Block Diagram (CY7C1413AV18)
DOFF
Address
Register
Read Add. Decode
Write
Reg
512K x 18 Array
K
CLK
Gen.
Write
Reg
512K x 18 Array
K
Write
Reg
512K x 18 Array
Address
Register
Write
Reg
512K x 18 Array
A(18:0)
19
18
Write Add. Decode
D[17:0]
19
A(18:0)
RPS
Control
Logic
C
Read Data Reg.
C
CQ
72
VREF
WPS
36
Control
Logic
Reg.
36
BWS[1:0]
Reg.
CQ
Reg. 18
18
18
18
18
Q[17:0]
Logic Block Diagram (CY7C1415AV18)
DOFF
Write
Reg
Address
Register
Read Add. Decode
256K x 36 Array
K
CLK
Gen.
Write
Reg
256K x 36 Array
K
Write
Reg
256K x 36 Array
Address
Register
Write
Reg
256K x 36 Array
A(17:0)
18
36
Write Add. Decode
D[35:0]
18
A(17:0)
RPS
Control
Logic
Read Data Reg.
C
C
CQ
144
VREF
WPS
72
Control
Logic
BWS[3:0]
Document Number: 38-05614 Rev. *D
72
Reg.
Reg.
Reg. 36
36
36
36
CQ
36
Q[35:0]
Page 3 of 31
[+] Feedback
CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
Pin Configuration
The pin configuration for CY7C1411AV18, CY7C1426AV18, CY7C1413AV18, and CY7C1415AV18 follow. [1]
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1411AV18 (4M x 8)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/72M
A
WPS
NWS1
K
NC/144M
RPS
A
A
CQ
B
NC
NC
NC
A
NC/288M
K
NWS0
A
NC
NC
Q3
C
NC
NC
NC
VSS
A
NC
A
VSS
NC
NC
D3
D
NC
D4
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
Q4
VDDQ
VSS
VSS
VSS
VDDQ
NC
D2
Q2
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
D5
Q5
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q1
D1
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
Q6
D6
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q0
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
D0
N
NC
D7
NC
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
Q7
A
A
C
A
A
NC
NC
NC
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
CY7C1426AV18 (4M x 9)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/72M
A
WPS
NC
K
NC/144M
RPS
A
A
CQ
B
NC
NC
NC
A
NC/288M
K
BWS0
A
NC
NC
Q4
C
NC
NC
NC
VSS
A
NC
A
VSS
NC
NC
D4
D
NC
D5
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
Q5
VDDQ
VSS
VSS
VSS
VDDQ
NC
D3
Q3
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
D6
Q6
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q2
D2
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
Q7
D7
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q1
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
D1
N
NC
D8
NC
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
Q8
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Note
1. NC/72M, NC/144M, and NC/288M are not connected to the die and can be tied to any voltage level.
Document Number: 38-05614 Rev. *D
Page 4 of 31
[+] Feedback
CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
Pin Configuration
(continued)
The pin configuration for CY7C1411AV18, CY7C1426AV18, CY7C1413AV18, and CY7C1415AV18 follow. [1]
165-Ball FBGA (15 x 17 x 1.4 mm) Pinout
CY7C1413AV18 (2M x 18)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/144M
A
WPS
BWS1
K
NC/288M
RPS
A
NC/72M
CQ
B
NC
Q9
D9
A
NC
K
BWS0
A
NC
NC
Q8
C
NC
NC
D10
VSS
A
NC
A
VSS
NC
Q7
D8
D
NC
D11
Q10
VSS
VSS
VSS
VSS
VSS
NC
NC
D7
E
NC
NC
Q11
VDDQ
VSS
VSS
VSS
VDDQ
NC
D6
Q6
F
NC
Q12
D12
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
Q5
G
NC
D13
Q13
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
D5
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
D14
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q4
D4
K
NC
NC
Q14
VDDQ
VDD
VSS
VDD
VDDQ
NC
D3
Q3
L
NC
Q15
D15
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q2
M
NC
NC
D16
VSS
VSS
VSS
VSS
VSS
NC
Q1
D2
N
NC
D17
Q16
VSS
A
A
A
VSS
NC
NC
D1
P
NC
NC
Q17
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
CY7C1415AV18 (1M x 36)
1
2
4
5
6
7
8
9
10
11
WPS
BWS2
K
BWS1
RPS
A
NC/144M
CQ
D18
A
BWS3
K
BWS0
A
D17
Q17
Q8
Q28
D19
VSS
A
NC
A
VSS
D16
Q7
D8
D28
D20
Q19
VSS
VSS
VSS
VSS
VSS
Q16
D15
D7
Q29
D29
Q20
VDDQ
VSS
VSS
VSS
VDDQ
Q15
D6
Q6
Q30
Q21
D21
VDDQ
VDD
VSS
VDD
VDDQ
D14
Q14
Q5
G
D30
D22
Q22
VDDQ
VDD
VSS
VDD
VDDQ
Q13
D13
D5
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
D31
Q31
D23
VDDQ
VDD
VSS
VDD
VDDQ
D12
Q4
D4
K
Q32
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
Q3
L
Q33
Q24
D24
VDDQ
VSS
VSS
VSS
VDDQ
D11
Q11
Q2
M
D33
Q34
D25
VSS
VSS
VSS
VSS
VSS
D10
Q1
D2
N
D34
D26
Q25
VSS
A
A
A
VSS
Q10
D9
D1
P
Q35
D35
Q26
A
A
C
A
A
Q9
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
A
CQ
B
Q27
Q18
C
D27
D
E
F
3
NC/288M NC/72M
Document Number: 38-05614 Rev. *D
Page 5 of 31
[+] Feedback
CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
Pin Definitions
Pin Name
IO
Pin Description
D[x:0]
InputData Input Signals. Sampled on the rising edge of K and K clocks when valid write operations are active.
Synchronous CY7C1411AV18 − D[7:0]
CY7C1426AV18 − D[8:0]
CY7C1413AV18 − D[17:0]
CY7C1415AV18 − D[35:0]
WPS
InputWrite Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a
Synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0].
NWS0,
NWS1,
InputNibble Write Select 0, 1 − Active LOW (CY7C1411AV18 Only). Sampled on the rising edge of the K
Synchronous and K clocks when write operations are active. Used to select which nibble is written into the device during
the current portion of the write operations. NWS0 controls D[3:0] and NWS1 controls D[7:4].
All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select
ignores the corresponding nibble of data and it is not written into the device.
BWS0,
BWS1,
BWS2,
BWS3
InputByte Write Select 0, 1, 2, and 3 − Active LOW. Sampled on the rising edge of the K and K clocks when
Synchronous write operations are active. Used to select which byte is written into the device during the current portion
of the write operations. Bytes not written remain unaltered.
CY7C1426AV18 − BWS0 controls D[8:0]
CY7C1413AV18 − BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C1415AV18 − BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls
D[35:27].
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device.
A
InputAddress Inputs. Sampled on the rising edge of the K clock during active read and write operations. These
Synchronous address inputs are multiplexed for both read and write operations. Internally, the device is organized as
4M x 8 (4 arrays each of 1M x 8) for CY7C1411AV18, 4M x 9 (4 arrays each of 1M x 9) for CY7C1426AV18,
2M x 18 (4 arrays each of 512K x 18) for CY7C1413AV18 and 1M x 36 (4 arrays each of 256K x 36) for
CY7C1415AV18. Therefore, only 20 address inputs are needed to access the entire memory array of
CY7C1411AV18 and CY7C1426AV18, 19 address inputs for CY7C1413AV18 and 18 address inputs for
CY7C1415AV18. These inputs are ignored when the appropriate port is deselected.
Q[x:0]
OutputsData Output Signals. These pins drive out the requested data when the read operation is active. Valid
Synchronous data is driven out on the rising edge of the C and C clocks during read operations or K and K, when in
single clock mode. On deselecting the read port, Q[x:0] are automatically tri-stated.
CY7C1411AV18 − Q[7:0]
CY7C1426AV18 − Q[8:0]
CY7C1413AV18 − Q[17:0]
CY7C1415AV18 − Q[35:0]
RPS
InputRead Port Select − Active LOW. Sampled on the rising edge of positive input clock (K). When active, a
Synchronous read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is
allowed to complete and the output drivers are automatically tri-stated following the next rising edge of
the C clock. Each read access consists of a burst of four sequential transfers.
C
Input Clock
Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board back
to the controller. See Application Example on page 9 for further details.
C
Input Clock
Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board back
to the controller. See Application Example on page 9 for further details.
K
Input Clock
Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising
edge of K.
K
Input Clock
Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q[x:0] when in single clock mode.
Document Number: 38-05614 Rev. *D
Page 6 of 31
[+] Feedback
CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
Pin Definitions
Pin Name
(continued)
IO
Pin Description
CQ
Echo Clock
CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock
for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks are shown in the Switching Characteristics on page 23.
CQ
Echo Clock
CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock
for output data (C) of the QDR-II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks are shown in the Switching Characteristics on page 23.
ZQ
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus
impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected
between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the
minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF
Input
DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device. The
timings in the DLL turned off operation differs from those listed in this data sheet.
TDO
Output
TCK
Input
TCK Pin for JTAG.
TDI
Input
TDI Pin for JTAG.
TMS
Input
TMS Pin for JTAG.
NC
N/A
Not Connected to the Die. Can be tied to any voltage level.
NC/72M
N/A
Not Connected to the Die. Can be tied to any voltage level.
NC/144M
N/A
Not Connected to the Die. Can be tied to any voltage level.
NC/288M
N/A
Not Connected to the Die. Can be tied to any voltage level.
VREF
VDD
VSS
VDDQ
InputReference
TDO for JTAG.
Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC
measurement points.
Power Supply Power Supply Inputs to the Core of the Device.
Ground
Ground for the Device.
Power Supply Power Supply Inputs for the Outputs of the Device.
Document Number: 38-05614 Rev. *D
Page 7 of 31
[+] Feedback
CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
Functional Overview
The CY7C1411AV18, CY7C1426AV18, CY7C1413AV18, and
CY7C1415AV18 are synchronous pipelined burst SRAMs with a
read port and a write port. The read port is dedicated to read
operations and the write port is dedicated to write operations.
Data flows into the SRAM through the write port and flows out
through the read port. These devices multiplex the address
inputs to minimize the number of address pins required. By
having separate read and write ports, the QDR-II completely
eliminates the need to turn-around the data bus and avoids any
possible data contention, thereby simplifying system design.
Each access consists of four 8-bit data transfers in the case of
CY7C1411AV18, four 9-bit data transfers in the case of
CY7C1426AV18, four 18-bit data transfers in the case of
CY7C1413AV18, and four 36-bit transfers data in the case of
CY7C1415AV18 in two clock cycles.
Accesses for both ports are initiated on the positive input clock
(K). All synchronous input timing is referenced from the rising
edge of the input clocks (K and K) and all output timing is referenced to the output clocks (C and C or K and K when in single
clock mode).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the input clocks (K and K). All synchronous data
outputs (Q[x:0]) pass through output registers controlled by the
rising edge of the output clocks (C and C or K and K when in
single clock mode).
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass
through input registers controlled by the rising edge of the input
clocks (K and K).
CY7C1413AV18 is described in the following sections. The same
basic descriptions apply to CY7C1411AV18, CY7C1426AV18,
and CY7C1415AV18.
Read Operations
The CY7C1413AV18 is organized internally as four arrays of
512K x 18. Accesses are completed in a burst of four sequential
18-bit data words. Read operations are initiated by asserting
RPS active at the rising edge of the positive input clock (K). The
address presented to address inputs are stored in the read
address register. Following the next K clock rise, the corresponding lowest order 18-bit word of data is driven onto the
Q[17:0] using C as the output timing reference. On the subsequent rising edge of C, the next 18-bit data word is driven onto
the Q[17:0]. This process continues until all four 18-bit data words
have been driven out onto Q[17:0]. The requested data is valid
0.45 ns from the rising edge of the output clock (C or C, or K or
K when in single clock mode). To maintain the internal logic, each
read access must be allowed to complete. Each read access
consists of four 18-bit data words and takes two clock cycles to
complete. Therefore, read accesses to the device can not be
initiated on two consecutive K clock rises. The internal logic of
the device ignores the second read request. Read accesses can
be initiated on every other K clock rise. Doing so pipelines the
data flow such that data is transferred out of the device on every
rising edge of the output clocks (C and C, or K and K when in
single clock mode).
When the read port is deselected, the CY7C1413AV18 first
completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the outputs following the next
Document Number: 38-05614 Rev. *D
rising edge of the positive output clock (C). This enables for a
transition between devices without the insertion of wait states in
a depth expanded memory.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the following K
clock rise the data presented to D[17:0] is latched and stored into
the lower 18-bit write data register, provided BWS[1:0] are both
asserted active. On the subsequent rising edge of the negative
input clock (K), the information presented to D[17:0] is also stored
into the write data register, provided BWS[1:0] are both asserted
active. This process continues for one more cycle until four 18-bit
words (a total of 72 bits) of data are stored in the SRAM. The 72
bits of data are then written into the memory array at the specified
location. Therefore, write accesses to the device can not be
initiated on two consecutive K clock rises. The internal logic of
the device ignores the second write request. Initiate write access
on every other rising edge of the positive input clock (K). Doing
so pipelines the data flow such that 18 bits of data transfers into
the device on every rising edge of the input clocks (K and K).
When deselected, the write port ignores all inputs after the
pending write operations have been completed.
Byte Write Operations
Byte write operations are supported by the CY7C1413AV18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS0 and
BWS1, which are sampled with each set of 18-bit data words.
Asserting the appropriate Byte Write Select input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the Byte Write Select input during
the data portion of a write enables the data stored in the device
for that byte to remain unaltered. This feature can be used to
simplify read, modify, or write operations to a byte write
operation.
Single Clock Mode
The CY7C1411AV18 can be used with a single clock that
controls both the input and output registers. In this mode the
device recognizes only a single pair of input clock (K and K) that
control both the input and output registers. This operation is
identical to the operation if the device had zero skew between
the K/K and C/C clocks. All timing parameters remains the same
in this mode. To use this mode of operation, the user must tie C
and C HIGH at power on. This function is a strap option and not
alterable during device operation.
Concurrent Transactions
The read and write ports on the CY7C1413AV18 operates
independently of one another. As each port latches the address
inputs on different clock edges, the user can read or write to any
location, regardless of the transaction on the other port. If the
ports access the same location when a read follows a write in
successive clock cycles, the SRAM delivers the most recent
information associated with the specified address location. This
includes forwarding data from a write cycle that was initiated on
the previous K clock rise.
Read accesses and write access must be scheduled such that
one transaction is initiated on any clock cycle. If both ports are
selected on the same K clock rise, the arbitration depends on the
Page 8 of 31
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CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
previous state of the SRAM. If both ports were deselected, the
read port takes priority. If a read was initiated on the previous
cycle, the write port takes priority (as read operations can not be
initiated on consecutive cycles). If a write was initiated on the
previous cycle, the read port takes priority (as write operations
can not be initiated on consecutive cycles). Therefore, asserting
both port selects active from a deselected state results in alternating read or write operations being initiated, with the first
access being a read.
Depth Expansion
The CY7C1413AV18 has a port select input for each port. This
enables for easy depth expansion. Both port selects are sampled
on the rising edge of the positive input clock only (K). Each port
select input can deselect the specified port. Deselecting a port
does not affect the other port. All pending transactions (read and
write) completes prior to the device being deselected.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to allow the SRAM to adjust its output
driver impedance. The value of RQ must be 5X the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175Ω and 350Ω, with VDDQ = 1.5V. The
output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.
Echo Clocks
Echo clocks are provided on the QDR-II to simplify data capture
on high-speed systems. Two echo clocks are generated by the
QDR-II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free running clocks and are synchronized to the output clock of the QDR-II. In the single clock mode,
CQ is generated with respect to K and CQ is generated with
respect to K. The timings for the echo clocks are shown in the
Switching Characteristics on page 23.
DLL
These chips use a Delay Lock Loop (DLL) that is designed to
function between 120 MHz and the specified maximum clock
frequency. During power up, when the DOFF is tied HIGH, the
DLL gets locked after 1024 cycles of stable clock. The DLL can
also be reset by slowing or stopping the input clock K and K for
a minimum of 30 ns. However, it is not necessary to reset the
DLL to lock to the desired frequency. The DLL automatically
locks 1024 clock cycles after a stable clock is presented. The
DLL may be disabled by applying ground to the DOFF pin. For
information refer to the application note AN5062, DLL Considerations in QDRII/DDRII/QDRII+/DDRII+.
Application Example
Figure 1 shows four QDR-II used in an application.
Figure 1. Application Example
SRAM #1
Vt
R
D
A
R
P
S
#
W
P
S
#
B
W
S
#
ZQ
CQ/CQ#
Q
C C# K K#
DATA IN
DATA OUT
Address
RPS#
BUS
WPS#
MASTER
BWS#
(CPU CLKIN/CLKIN#
or
Source K
ASIC)
Source K#
R = 250ohms
SRAM #4
R
P
S
#
D
A
R
W
P
S
#
B
W
S
#
ZQ R = 250ohms
CQ/CQ#
Q
C C# K K#
Vt
Vt
Delayed K
Delayed K#
R
R = 50ohms Vt = Vddq/2
Document Number: 38-05614 Rev. *D
Page 9 of 31
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CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
Truth Table
The truth table for CY7C1411AV18, CY7C1426AV18, CY7C1413AV18, and CY7C1415AV18 follows. [2, 3, 4, 5, 6, 7]
Operation
K
RPS WPS
[8]
[9]
DQ
DQ
DQ
DQ
Write Cycle:
Load address on the rising
edge of K; input write data
on two consecutive K and
K rising edges.
L-H
H
Read Cycle:
Load address on the rising
edge of K; wait one and a
half cycle; read data on
two consecutive C and C
rising edges.
L-H
L [9]
X
Q(A) at C(t + 1)↑ Q(A + 1) at C(t + 2)↑ Q(A + 2) at C(t + 2)↑ Q(A + 3) at C(t + 3)↑
NOP: No Operation
L-H
H
H
D=X
Q = High-Z
D=X
Q = High-Z
D=X
Q = High-Z
D=X
Q = High-Z
Stopped
X
X
Previous State
Previous State
Previous State
Previous State
Standby: Clock Stopped
L
D(A) at K(t + 1)↑ D(A + 1) at K(t + 1)↑ D(A + 2) at K(t + 2)↑ D(A + 3) at K(t + 2)↑
Write Cycle Descriptions
The write cycle description table for CY7C1411AV18 and CY7C1413AV18 follows. [2, 10]
BWS0/ BWS1/
K
K
L
L–H
–
L
L
–
L
H
L–H
L
H
–
H
L
L–H
H
L
–
H
H
L–H
H
H
–
NWS0
NWS1
L
Comments
During the data portion of a write sequence:
CY7C1411AV18 − both nibbles (D[7:0]) are written into the device.
CY7C1413AV18 − both bytes (D[17:0]) are written into the device.
L-H During the data portion of a write sequence:
CY7C1411AV18 − both nibbles (D[7:0]) are written into the device.
CY7C1413AV18 − both bytes (D[17:0]) are written into the device.
–
During the data portion of a write sequence:
CY7C1411AV18 − only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1413AV18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L–H During the data portion of a write sequence:
CY7C1411AV18 − only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1413AV18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
–
During the data portion of a write sequence:
CY7C1411AV18 − only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1413AV18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
L–H During the data portion of a write sequence:
CY7C1411AV18 − only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1413AV18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
–
No data is written into the devices during this portion of a write operation.
L–H No data is written into the devices during this portion of a write operation.
Notes
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, ↑represents rising edge.
3. Device powers up deselected with the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A +3 represents the address sequence in the burst.
5. “t” represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically.
8. If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.
9. This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the
second read or write request.
10. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on
different portions of a write cycle, as long as the setup and hold requirements are achieved.
Document Number: 38-05614 Rev. *D
Page 10 of 31
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CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
Write Cycle Descriptions
The write cycle description table for CY7C1426AV18 follows. [2, 10]
BWS0
K
K
Comments
L
L–H
–
During the Data portion of a write sequence, the single byte (D[8:0]) is written into the device.
L
–
L–H
During the Data portion of a write sequence, the single byte (D[8:0]) is written into the device.
H
L–H
–
No data is written into the device during this portion of a write operation.
H
–
L–H
No data is written into the device during this portion of a write operation.
Write Cycle Descriptions
The write cycle description table for CY7C1415AV18 follows. [2, 10]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L–H
–
During the Data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
–
L
H
H
H
L–H
L
H
H
H
–
H
L
H
H
L–H
H
L
H
H
–
H
H
L
H
L–H
H
H
L
H
–
H
H
H
L
L–H
H
H
H
L
–
H
H
H
H
L–H
H
H
H
H
–
Document Number: 38-05614 Rev. *D
L–H During the Data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
–
During the Data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L–H During the Data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
–
During the Data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
L–H During the Data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
–
During the Data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
L–H During the Data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
–
During the Data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
L–H During the Data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Page 11 of 31
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CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-1900. The TAP operates using JEDEC
standard 1.8V IO logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternatively
be connected to VDD through a pull up resistor. TDO must be left
unconnected. Upon power up, the device comes up in a reset
state, which does not interfere with the operation of the device.
Test Access Port—Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see the TAP Controller State
Diagram on page 14. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Instruction Register
Three bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in TAP Controller Block Diagram on
page 15. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (VSS) when
the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.
The Boundary Scan Order on page 18 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Test Data-Out (TDO)
Identification (ID) Register
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 17).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
The ID register is loaded with a vendor specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 17.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a high-Z state.
TAP Registers
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Document Number: 38-05614 Rev. *D
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
Codes on page 17. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in this section in detail.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Page 12 of 31
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CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
IDCODE
The IDCODE instruction loads a vendor specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power up or whenever the TAP controller is supplied a
Test-Logic-Reset state.
SAMPLE Z
The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a High-Z state until the next command is supplied during the
Update IR state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output undergoes a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.
PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
EXTEST
The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.
EXTEST OUTPUT BUS TRI-STATE
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tri-state mode.
The boundary scan register has a special bit located at bit #108.
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a
High-Z condition.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that cell,
during the Shift-DR state. During Update-DR, the value loaded
into that shift-register cell latches into the preload register. When
the EXTEST instruction is entered, this bit directly controls the
output Q-bus pins. Note that this bit is preset HIGH to enable the
output when the device is powered up, and also when the TAP
controller is in the Test-Logic-Reset state.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
Reserved
Document Number: 38-05614 Rev. *D
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Page 13 of 31
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CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
TAP Controller State Diagram
The state diagram for the TAP controller follows. [11]
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
SELECT
DR-SCAN
1
1
SELECT
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
SHIFT-DR
0
SHIFT-IR
1
1
EXIT1-DR
1
EXIT1-IR
0
1
0
PAUSE-DR
0
PAUSE-IR
1
0
1
0
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-IR
UPDATE-DR
1
0
0
1
0
Note
11. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document Number: 38-05614 Rev. *D
Page 14 of 31
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CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
TAP Controller Block Diagram
0
Bypass Register
2
Selection
Circuitry
TDI
1
0
Selection
Circuitry
Instruction Register
31
30
29
.
.
2
1
0
1
0
TDO
Identification Register
108
.
.
.
.
2
Boundary Scan Register
TCK
TAP Controller
TMS
TAP Electrical Characteristics
Over the Operating Range [12, 13, 14]
Parameter
Description
Test Conditions
Min
Max
Unit
VOH1
Output HIGH Voltage
IOH = −2.0 mA
1.4
V
VOH2
Output HIGH Voltage
IOH = −100 μA
1.6
V
VOL1
Output LOW Voltage
IOL = 2.0 mA
0.4
V
VOL2
Output LOW Voltage
IOL = 100 μA
0.2
V
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IX
Input and Output Load Current
0.65VDD VDD + 0.3
GND ≤ VI ≤ VDD
V
–0.3
0.35VDD
V
–5
5
μA
Notes
12. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.
13. Overshoot: VIH(AC) < VDDQ + 0.85V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > −1.5V (Pulse width less than tCYC/2).
14. All Voltage referenced to Ground.
Document Number: 38-05614 Rev. *D
Page 15 of 31
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CY7C1411AV18, CY7C1426AV18
CY7C1413AV18, CY7C1415AV18
TAP AC Switching Characteristics
Over the Operating Range [15, 16]
Parameter
Description
Min
Max
Unit
20
MHz
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH
20
ns
tTL
TCK Clock LOW
20
ns
tTMSS
TMS Setup to TCK Clock Rise
5
ns
tTDIS
TDI Setup to TCK Clock Rise
5
ns
tCS
Capture Setup to TCK Rise
5
ns
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
50
ns
Setup Times
Hold Times
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
0
ns
ns
TAP Timing and Test Conditions
Figure 2 shows the TAP timing and test conditions. [16]
Figure 2. TAP Timing and Test Conditions
0.9V
ALL INPUT PULSES
1.8V
50Ω
0.9V
TDO
0V
Z0 = 50Ω
(a)
CL = 20 pF
tTH
GND
tTL
Test Clock
TCK
tTCYC
tTMSH
tTMSS
Test Mode Select
TMS
tTDIS
tTDIH
Test Data In
TDI
Test Data Out
TDO
tTDOV
tTDOX
Notes
15. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
16. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document Number: 38-05614 Rev. *D
Page 16 of 31
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CY7C1413AV18, CY7C1415AV18
Identification Register Definitions
Instruction Field
Value
CY7C1411AV18
CY7C1426AV18
CY7C1413AV18
CY7C1415AV18
000
000
000
000
Revision Number
(31:29)
Description
Version number.
Cypress Device ID 11010011011000111 11010011011001111 11010011011010111 11010011011100111 Defines the type of
(28:12)
SRAM.
Cypress JEDEC ID
(11:1)
00000110100
00000110100
00000110100
00000110100
1
1
1
1
ID Register
Presence (0)
Allows unique
identification of
SRAM vendor.
Indicates the
presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary Scan
109
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the input and output ring contents. Places the boundary scan register between TDI
and TDO. Does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Document Number: 38-05614 Rev. *D
Page 17 of 31
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CY7C1413AV18, CY7C1415AV18
Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
28
10G
56
6A
84
1J
1
6P
29
9G
57
5B
85
2J
2
6N
30
11F
58
5A
86
3K
3
7P
31
11G
59
4A
87
3J
4
7N
32
9F
60
5C
88
2K
5
7R
33
10F
61
4B
89
1K
6
8R
34
11E
62
3A
90
2L
7
8P
35
10E
63
2A
91
3L
8
9R
36
10D
64
1A
92
1M
9
11P
37
9E
65
2B
93
1L
10
10P
38
10C
66
3B
94
3N
3M
11
10N
39
11D
67
1C
95
12
9P
40
9C
68
1B
96
1N
13
10M
41
9D
69
3D
97
2M
14
11N
42
11B
70
3C
98
3P
15
9M
43
11C
71
1D
99
2N
16
9N
44
9B
72
2C
100
2P
17
11L
45
10B
73
3E
101
1P
18
11M
46
11A
74
2D
102
3R
19
9L
47
10A
75
2E
103
4R
20
10L
48
9A
76
1E
104
4P
21
11K
49
8B
77
2F
105
5P
22
10K
50
7C
78
3F
106
5N
23
9J
51
6C
79
1G
107
5R
24
9K
52
8A
80
1F
108
Internal
25
10J
53
7A
81
3G
26
11J
54
7B
82
2G
27
11H
55
6B
83
1H
Document Number: 38-05614 Rev. *D
Page 18 of 31
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Power Up Sequence in QDR-II SRAM
QDR-II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
Power Up Sequence
■
Apply power and drive DOFF either HIGH or LOW (All other
inputs can be HIGH or LOW).
❐ Apply VDD before VDDQ.
❐ Apply VDDQ before VREF or at the same time as VREF.
❐ Drive DOFF HIGH.
■
Provide stable DOFF (HIGH), power and clock (K, K) for 1024
cycles to lock the DLL.
DLL Constraints
■
DLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var.
■
The DLL functions at frequencies down to 120 MHz.
■
If the input clock is unstable and the DLL is enabled, then the
DLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide1024 cycles stable clock
to relock to the desired clock frequency.
~
~
Figure 3. Power Up Waveforms
K
K
~
~
Unstable Clock
> 1024 Stable clock
Start Normal
Operation
Clock Start (Clock Starts after V DD / V DDQ Stable)
VDD / VDDQ
DOFF
Document Number: 38-05614 Rev. *D
V DD / V DDQ Stable (< +/- 0.1V DC per 50ns )
Fix High (or tie to VDDQ)
Page 19 of 31
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Maximum Ratings
Current into Outputs (LOW) ........................................ 20 mA
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V
Latch-up Current ................................................... > 200 mA
Operating Range
Ambient Temperature with Power Applied.. –55°C to +125°C
Supply Voltage on VDD Relative to GND ........–0.5V to +2.9V
Range
Supply Voltage on VDDQ Relative to GND.......–0.5V to +VDD
Commercial
DC Applied to Outputs in High-Z ........ –0.5V to VDDQ + 0.3V
Industrial
DC Input Voltage
[13]
Ambient
Temperature (TA)
VDD [17]
VDDQ [17]
0°C to +70°C
1.8 ± 0.1V
1.4V to
VDD
–40°C to +85°C
.............................. –0.5V to VDD + 0.3V
Electrical Characteristics
DC Electrical Characteristics
Over the Operating Range [14]
Parameter
VDD
VDDQ
VOH
VOL
VOH(LOW)
VOL(LOW)
VIH
VIL
IX
IOZ
VREF
IDD [21]
Description
Power Supply Voltage
IO Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Input Reference Voltage [20]
VDD Operating Supply
Test Conditions
Note 18
Note 19
IOH = −0.1 mA, Nominal Impedance
IOL = 0.1 mA, Nominal Impedance
GND ≤ VI ≤ VDDQ
GND ≤ VI ≤ VDDQ, Output Disabled
Typical Value = 0.75V
VDD = Max,
300MHz
IOUT = 0 mA,
f = fMAX = 1/tCYC
278MHz
250MHz
(x8)
(x9)
(x18)
(x36)
(x8)
(x9)
(x18)
(x36)
(x8)
(x9)
(x18)
(x36)
Min
Typ
Max
Unit
1.7
1.8
1.9
V
1.4
1.5
VDD
V
VDDQ/2 – 0.12
VDDQ/2 + 0.12 V
VDDQ/2 – 0.12
VDDQ/2 + 0.12 V
VDDQ – 0.2
VDDQ
V
VSS
0.2
V
VREF + 0.1
VDDQ + 0.15
V
–0.3
VREF – 0.1
V
−5
5
μA
−5
5
μA
0.68
0.75
0.95
V
885
mA
900
940
1040
815
mA
830
865
950
745
mA
760
790
870
Notes
17. Power up: Assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
18. Output are impedance controlled. IOH = −(VDDQ/2)/(RQ/5) for values of 175 ohms