CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
®
36-Mbit QDR II SRAM Four-Word
Burst Architecture
36-Mbit QDR® II SRAM Four-Word Burst Architecture
Features
Configurations
Separate independent read and write data ports
❐ Supports concurrent transactions
CY7C1411KV18 – 4M × 8
■
333 MHz clock for high bandwidth
CY7C1413KV18 – 2M × 18
■
Four-word burst for reducing address bus frequency
CY7C1415KV18 – 1M × 36
■
Double data rate (DDR) Interfaces on both read and write ports
(data transferred at 666 MHz) at 333 MHz
Functional Description
■
Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
■
Single multiplexed address input bus latches address inputs
for read and write ports
■
Separate port selects for depth expansion
■
Synchronous internally self-timed writes
■
QDR® II operates with 1.5 cycle read latency when DOFF is
asserted HIGH
■
CY7C1426KV18 – 4M × 9
■
Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted LOW
■
Available in × 8, × 9, × 18, and × 36 configurations
■
Full data coherency, providing most current data
The CY7C1411KV18, CY7C1426KV18, CY7C1413KV18, and
CY7C1415KV18 are 1.8 V synchronous pipelined SRAMs,
equipped with QDR II architecture. QDR II architecture consists
of two separate ports: the read port and the write port to access
the memory array. The read port has dedicated data outputs to
support read operations and the write port has dedicated data
inputs to support write operations. QDR II architecture has
separate data inputs and data outputs to completely eliminate
the need to “turnaround” the data bus that exists with common
I/O devices. Each port can be accessed through a common
address bus. Addresses for read and write addresses are
latched on alternate rising edges of the input (K) clock. Accesses
to the QDR II read and write ports are independent of one
another. To maximize data throughput, both read and write ports
are equipped with DDR interfaces. Each address location is
associated with four 8-bit words (CY7C1411KV18), 9-bit words
(CY7C1426KV18), 18-bit words (CY7C1413KV18), or 36-bit
words (CY7C1415KV18) that burst sequentially into or out of the
device. Because data can be transferred into and out of the
device on every rising edge of both input clocks (K and K and C
and C), memory bandwidth is maximized while simplifying
system design by eliminating bus ‘turnarounds’.
■
Core VDD = 1.8 V (±0.1 V); I/O VDDQ = 1.4 V to VDD
❐ Supports both 1.5 V and 1.8 V I/O supply
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
■
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■
Offered in both Pb-free and non Pb-free Packages
■
Variable drive HSTL output buffers
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
■
JTAG 1149.1 compatible test access port
For a complete list of related documentation, click here.
■
Phase locked loop (PLL) for accurate data placement
Selection Guide
Description
333 MHz
300 MHz
250 MHz
Unit
333
300
250
MHz
×8
Not Offered
520
460
mA
×9
560
520
460
× 18
570
540
470
× 36
790
730
640
Maximum operating frequency
Maximum operating current
Cypress Semiconductor Corporation
Document Number: 001-57826 Rev. *L
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised November 21, 2017
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Logic Block Diagram – CY7C1411KV18
DOFF
Write
Reg
Address
Register
Read Add. Decode
1M x 8 Array
K
CLK
Gen.
Write
Reg
1M x 8 Array
K
Write
Reg
1M x 8 Array
Address
Register
Write
Reg
1M x 8 Array
A(19:0)
20
8
Write Add. Decode
D[7:0]
20
A(19:0)
RPS
Control
Logic
C
Read Data Reg.
C
CQ
32
VREF
WPS
NWS[1:0]
16
Control
Logic
Reg.
16
Reg.
CQ
Reg. 8
8
8
8
8
Q[7:0]
Logic Block Diagram – CY7C1426KV18
DOFF
Write
Reg
Address
Register
Read Add. Decode
1M x 9 Array
K
CLK
Gen.
Write
Reg
1M x 9 Array
K
Write
Reg
1M x 9 Array
Address
Register
Write
Reg
1M x 9 Array
A(19:0)
20
9
Write Add. Decode
D[8:0]
Control
Logic
Read Data Reg.
20
A(19:0)
RPS
C
C
CQ
36
VREF
WPS
BWS[0]
18
Control
Logic
Document Number: 001-57826 Rev. *L
18
Reg.
Reg.
Reg. 9
9
9
9
CQ
9
Q[8:0]
Page 2 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Logic Block Diagram – CY7C1413KV18
DOFF
Address
Register
Read Add. Decode
Write
Reg
512K x 18 Array
K
CLK
Gen.
Write
Reg
512K x 18 Array
K
Write
Reg
512K x 18 Array
Address
Register
Write
Reg
512K x 18 Array
A(18:0)
19
18
Write Add. Decode
D[17:0]
Control
Logic
19
A(18:0)
RPS
C
Read Data Reg.
C
CQ
72
VREF
WPS
BWS[1:0]
36
Control
Logic
Reg.
36
Reg.
CQ
Reg. 18
18
18
18
18
Q[17:0]
Logic Block Diagram – CY7C1415KV18
DOFF
Address
Register
Read Add. Decode
Write
Reg
256K x 36 Array
K
CLK
Gen.
Write
Reg
256K x 36 Array
K
Write
Reg
256K x 36 Array
Address
Register
Write
Reg
256K x 36 Array
A(17:0)
18
36
Write Add. Decode
D[35:0]
Control
Logic
Read Data Reg.
18
A(17:0)
RPS
C
C
CQ
144
VREF
WPS
BWS[3:0]
72
Control
Logic
Document Number: 001-57826 Rev. *L
72
Reg.
Reg.
Reg. 36
36
36
36
CQ
36
Q[35:0]
Page 3 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Contents
Pin Configurations ........................................................... 5
Pin Definitions .................................................................. 7
Functional Overview ........................................................ 8
Read Operations ......................................................... 8
Write Operations ......................................................... 9
Byte Write Operations ................................................. 9
Single Clock Mode ...................................................... 9
Concurrent Transactions ............................................. 9
Depth Expansion ......................................................... 9
Programmable Impedance .......................................... 9
Echo Clocks ................................................................ 9
PLL ............................................................................ 10
Application Example ...................................................... 10
Truth Table ...................................................................... 11
Write Cycle Descriptions ............................................... 12
Write Cycle Descriptions ............................................... 12
Write Cycle Descriptions ............................................... 13
IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 14
Disabling the JTAG Feature ...................................... 14
Test Access Port ....................................................... 14
Performing a TAP Reset ........................................... 14
TAP Registers ........................................................... 14
TAP Instruction Set ................................................... 14
TAP Controller State Diagram ....................................... 16
TAP Controller Block Diagram ...................................... 17
TAP Electrical Characteristics ...................................... 17
TAP AC Switching Characteristics ............................... 18
TAP Timing and Test Conditions .................................. 19
Identification Register Definitions ................................ 20
Scan Register Sizes ....................................................... 20
Document Number: 001-57826 Rev. *L
Instruction Codes ........................................................... 20
Boundary Scan Order .................................................... 21
Power Up Sequence in QDR II SRAM ........................... 22
Power Up Sequence ................................................. 22
PLL Constraints ......................................................... 22
Maximum Ratings ........................................................... 23
Operating Range ............................................................. 23
Neutron Soft Error Immunity ......................................... 23
Electrical Characteristics ............................................... 23
DC Electrical Characteristics ..................................... 23
AC Electrical Characteristics ..................................... 25
Capacitance .................................................................... 25
Thermal Resistance ........................................................ 25
AC Test Loads and Waveforms ..................................... 25
Switching Characteristics .............................................. 26
Switching Waveforms .................................................... 28
Ordering Information ...................................................... 29
Ordering Code Definitions ......................................... 29
Package Diagram ............................................................ 30
Acronyms ........................................................................ 31
Document Conventions ................................................. 31
Units of Measure ....................................................... 31
Document History Page ................................................. 32
Sales, Solutions, and Legal Information ...................... 33
Worldwide Sales and Design Support ....................... 33
Products .................................................................... 33
PSoC®Solutions ....................................................... 33
Cypress Developer Community ................................. 33
Technical Support ..................................................... 33
Page 4 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Pin Configurations
The pin configurations for CY7C1411KV18, CY7C1426KV18, CY7C1413KV18, and CY7C1415KV18 follows. [1]
Figure 1. 165-ball FBGA (13 × 15 × 1.4 mm) pinout
CY7C1411KV18 (4M × 8)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/72M
A
WPS
NWS1
K
NC/144M
RPS
A
A
CQ
B
NC
NC
NC
A
NC/288M
K
NWS0
A
NC
NC
Q3
C
NC
NC
NC
VSS
A
NC
A
VSS
NC
NC
D3
D
NC
D4
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
Q4
VDDQ
VSS
VSS
VSS
VDDQ
NC
D2
Q2
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
D5
Q5
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q1
D1
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
Q6
D6
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q0
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
D0
N
NC
D7
NC
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
Q7
A
A
C
A
A
NC
NC
NC
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
CY7C1426KV18 (4M × 9)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/72M
A
WPS
NC
K
NC/144M
RPS
A
A
CQ
B
NC
NC
NC
A
NC/288M
K
BWS0
A
NC
NC
Q4
C
NC
NC
NC
VSS
A
NC
A
VSS
NC
NC
D4
D
NC
D5
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
Q5
VDDQ
VSS
VSS
VSS
VDDQ
NC
D3
Q3
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
D6
Q6
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q2
D2
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
Q7
D7
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q1
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
D1
N
NC
D8
NC
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
Q8
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Note
1. NC/72M, NC/144M, and NC/288M are not connected to the die and can be tied to any voltage level.
Document Number: 001-57826 Rev. *L
Page 5 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Pin Configurations (continued)
The pin configurations for CY7C1411KV18, CY7C1426KV18, CY7C1413KV18, and CY7C1415KV18 follows. [1]
Figure 1. 165-ball FBGA (13 × 15 × 1.4 mm) pinout
CY7C1413KV18 (2M × 18)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/144M
A
WPS
BWS1
K
NC/288M
RPS
A
NC/72M
CQ
B
NC
Q9
D9
A
NC
K
BWS0
A
NC
NC
Q8
C
NC
NC
D10
VSS
A
NC
A
VSS
NC
Q7
D8
D
NC
D11
Q10
VSS
VSS
VSS
VSS
VSS
NC
NC
D7
E
NC
NC
Q11
VDDQ
VSS
VSS
VSS
VDDQ
NC
D6
Q6
F
NC
Q12
D12
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
Q5
G
NC
D13
Q13
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
D5
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
D14
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q4
D4
K
NC
NC
Q14
VDDQ
VDD
VSS
VDD
VDDQ
NC
D3
Q3
L
NC
Q15
D15
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q2
M
NC
NC
D16
VSS
VSS
VSS
VSS
VSS
NC
Q1
D2
N
NC
D17
Q16
VSS
A
A
A
VSS
NC
NC
D1
P
NC
NC
Q17
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
9
10
11
CY7C1415KV18 (1M × 36)
1
2
3
NC/288M NC/72M
4
5
6
7
8
A
CQ
WPS
BWS2
K
BWS1
RPS
A
NC/144M
CQ
B
Q27
Q18
D18
A
BWS3
K
BWS0
A
D17
Q17
Q8
C
D27
Q28
D19
VSS
A
NC
A
VSS
D16
Q7
D8
D
D28
D20
Q19
VSS
VSS
VSS
VSS
VSS
Q16
D15
D7
E
Q29
D29
Q20
VDDQ
VSS
VSS
VSS
VDDQ
Q15
D6
Q6
F
Q30
Q21
D21
VDDQ
VDD
VSS
VDD
VDDQ
D14
Q14
Q5
G
D30
D22
Q22
VDDQ
VDD
VSS
VDD
VDDQ
Q13
D13
D5
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
D31
Q31
D23
VDDQ
VDD
VSS
VDD
VDDQ
D12
Q4
D4
K
Q32
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
Q3
L
Q33
Q24
D24
VDDQ
VSS
VSS
VSS
VDDQ
D11
Q11
Q2
M
D33
Q34
D25
VSS
VSS
VSS
VSS
VSS
D10
Q1
D2
N
D34
D26
Q25
VSS
A
A
A
VSS
Q10
D9
D1
P
Q35
D35
Q26
A
A
C
A
A
Q9
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Document Number: 001-57826 Rev. *L
Page 6 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Pin Definitions
Pin Name
I/O
Pin Description
D[x:0]
InputData input signals. Sampled on the rising edge of K and K clocks when valid write operations are active.
synchronous CY7C1411KV18 D[7:0]
CY7C1426KV18 D[8:0]
CY7C1413KV18 D[17:0]
CY7C1415KV18 D[35:0]
WPS
InputWrite port select active LOW. Sampled on the rising edge of the K clock. When asserted active, a
synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0].
NWS0,
NWS1
InputNibble write select 0, 1 active LOW (CY7C1411KV18 only). Sampled on the rising edge of the K
synchronous and K clocks when write operations are active. Used to select which nibble is written into the device
during the current portion of the write operations. NWS0 controls D[3:0] and NWS1 controls D[7:4].
All the nibble write selects are sampled on the same edge as the data. Deselecting a nibble write select
ignores the corresponding nibble of data and it is not written into the device.
BWS0,
BWS1,
BWS2,
BWS3
InputByte write select 0, 1, 2, and 3 active LOW. Sampled on the rising edge of the K and K clocks when
synchronous write operations are active. Used to select which byte is written into the device during the current portion
of the write operations. Bytes not written remain unaltered.
CY7C1426KV18 BWS0 controls D[8:0]
CY7C1413KV18 BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C1415KV18 BWS0 controls D[8:0], BWS1 controls D[17:9],
BWS2 controls D[26:18] and BWS3 controls D[35:27].
All the byte write selects are sampled on the same edge as the data. Deselecting a byte write select
ignores the corresponding byte of data and it is not written into the device.
A
InputAddress inputs. Sampled on the rising edge of the K clock during active read and write operations.
synchronous These address inputs are multiplexed for both read and write operations. Internally, the device is
organized as 4M × 8 (4 arrays each of 1M × 8) for CY7C1411KV18, 4M × 9 (4 arrays each of 1M × 9)
for CY7C1426KV18, 2M × 18 (4 arrays each of 512K × 18) for CY7C1413KV18 and 1M × 36 (4 arrays
each of 256K × 36) for CY7C1415KV18. Therefore, only 20 address inputs are needed to access the
entire memory array of CY7C1411KV18 and CY7C1426KV18, 19 address inputs for CY7C1413KV18
and 18 address inputs for CY7C1415KV18. These inputs are ignored when the appropriate port is
deselected.
Q[x:0]
OutputsData output signals. These pins drive out the requested data when the read operation is active. Valid
synchronous data is driven out on the rising edge of the C and C clocks during read operations, or K and K when in
single clock mode. On deselecting the read port, Q[x:0] are automatically tristated.
CY7C1411KV18 Q[7:0]
CY7C1426KV18 Q[8:0]
CY7C1413KV18 Q[17:0]
CY7C1415KV18 Q[35:0]
RPS
InputRead port select active LOW. Sampled on the rising edge of positive input clock (K). When active, a
synchronous read operation is initiated. Deasserting deselects the read port. When deselected, the pending access
is allowed to complete and the output drivers are automatically tristated following the next rising edge
of the C clock. Each read access consists of a burst of four sequential transfers.
C
Input clock
Positive input clock for output data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board
back to the controller. See Application Example on page 10 for further details.
C
Input clock
Negative input clock for output data. C is used in conjunction with C to clock out the read data from
the device. C and C can be used together to deskew the flight times of various devices on the board
back to the controller. See Application Example on page 10 for further details.
K
Input clock
Positive input clock input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising
edge of K.
K
Input clock
Negative input clock input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q[x:0] when in single clock mode.
Document Number: 001-57826 Rev. *L
Page 7 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Pin Definitions (continued)
Pin Name
I/O
Pin Description
CQ
Echo clock
CQ referenced with respect to C. This is a free running clock and is synchronized to the input clock
for output data (C) of the QDR II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks are shown in the Switching Characteristics on page 26.
CQ
Echo clock
CQ referenced with respect to C. This is a free running clock and is synchronized to the input clock
for output data (C) of the QDR II. In the single clock mode, CQ is generated with respect to K. The timings
for the echo clocks are shown in the Switching Characteristics on page 26.
ZQ
Input
Output impedance matching input. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 × RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which
enables the minimum impedance mode. This pin cannot be connected directly to GND or left
unconnected.
DOFF
Input
PLL turn off active LOW. Connecting this pin to ground turns off the PLL inside the device. The timings
in the PLL turned off operation differs from those listed in this data sheet. For normal operation, this pin
is connected to a pull up through a 10 K or less pull-up resistor. The device behaves in QDR I mode
when the PLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz
with QDR I timing.
TDO
Output
TDO pin for JTAG.
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG.
TMS
Input
TMS pin for JTAG.
NC
N/A
Not connected to the die. Can be tied to any voltage level.
NC/72M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/144M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/288M
N/A
Not connected to the die. Can be tied to any voltage level.
VREF
VDD
VSS
VDDQ
Inputreference
Reference voltage input. Static input used to set the reference level for HSTL inputs, outputs, and AC
measurement points.
Power supply Power supply inputs to the core of the device.
Ground
Ground for the device.
Power supply Power supply inputs for the outputs of the device.
Functional Overview
The CY7C1411KV18, CY7C1426KV18, CY7C1413KV18,
CY7C1415KV18 are synchronous pipelined burst SRAMs with a
read port and a write port. The read port is dedicated to read
operations and the write port is dedicated to write operations.
Data flows into the SRAM through the write port and flows out
through the read port. These devices multiplex the address
inputs to minimize the number of address pins required. By
having separate read and write ports, the QDR II completely
eliminates the need to turn around the data bus and avoids any
possible data contention, thereby simplifying system design.
Each access consists of four 8-bit data transfers in the case of
CY7C1411KV18, four 9-bit data transfers in the case of
CY7C1426KV18, four 18-bit data transfers in the case of
CY7C1413KV18, and four 36-bit data transfers in the case of
CY7C1415KV18 in two clock cycles.
This device operates with a read latency of one and half cycles
when DOFF pin is tied HIGH. When DOFF pin is set LOW or
connected to VSS then device behaves in QDR I mode with a
read latency of one clock cycle.
Document Number: 001-57826 Rev. *L
Accesses for both ports are initiated on the positive input clock
(K). All synchronous input timing is referenced from the rising
edge of the input clocks (K and K) and all output timing is
referenced to the output clocks (C and C, or K and K when in
single clock mode).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the input clocks (K and K). All synchronous data
outputs (Q[x:0]) pass through output registers controlled by the
rising edge of the output clocks (C and C, or K and K when in
single clock mode).
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass
through input registers controlled by the rising edge of the input
clocks (K and K).
CY7C1413KV18 is described in the following sections. The
same basic descriptions apply to CY7C1411KV18,
CY7C1426KV18 and CY7C1415KV18.
Read Operations
The CY7C1413KV18 is organized internally as four arrays of
512K × 18. Accesses are completed in a burst of four sequential
Page 8 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
18-bit data words. Read operations are initiated by asserting
RPS active at the rising edge of the positive input clock (K). The
address presented to the address inputs is stored in the read
address register. Following the next K clock rise, the
corresponding lowest order 18-bit word of data is driven onto the
Q[17:0] using C as the output timing reference. On the
subsequent rising edge of C, the next 18-bit data word is driven
onto the Q[17:0]. This process continues until all four 18-bit data
words are driven out onto Q[17:0]. The requested data is valid
0.45 ns from the rising edge of the output clock (C or C, or K or
K when in single clock mode). To maintain the internal logic, each
read access must be enabled to complete. Each read access
consists of four 18-bit data words and takes two clock cycles to
complete. Therefore, read accesses to the device cannot be
initiated on two consecutive K clock rises. The internal logic of
the device ignores the second read request. Read accesses can
be initiated on every other K clock rise. Doing so pipelines the
data flow such that data is transferred out of the device on every
rising edge of the output clocks (C and C, or K and K when in
single clock mode).
When the read port is deselected, the CY7C1413KV18 first
completes the pending read transactions. Synchronous internal
circuitry automatically tristates the outputs following the next
rising edge of the positive output clock (C). This enables a
seamless transition between devices without the insertion of wait
states in a depth expanded memory.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the following K
clock rise the data presented to D[17:0] is latched and stored into
the lower 18-bit write data register, provided BWS[1:0] are both
asserted active. On the subsequent rising edge of the negative
input clock (K) the information presented to D[17:0] is also stored
into the write data register, provided BWS[1:0] are both asserted
active. This process continues for one more cycle until four 18-bit
words (a total of 72 bits) of data are stored in the SRAM. The
72 bits of data are then written into the memory array at the
specified location. Therefore, write accesses to the device
cannot be initiated on two consecutive K clock rises. The internal
logic of the device ignores the second write request. Write
accesses can be initiated on every other rising edge of the
positive input clock (K). Doing so pipelines the data flow such
that 18 bits of data can be transferred into the device on every
rising edge of the input clocks (K and K).
When deselected, the write port ignores all inputs after the
pending write operations are completed.
Byte Write Operations
Byte write operations are supported by the CY7C1413KV18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS0 and
BWS1, which are sampled with each set of 18-bit data words.
Asserting the appropriate byte write select input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the byte write select input during the
data portion of a write enables the data stored in the device for
that byte to remain unaltered. This feature is used to simplify
read, modify, or write operations to a byte write operation.
Document Number: 001-57826 Rev. *L
Single Clock Mode
The CY7C1411KV18 is used with a single clock that controls
both the input and output registers. In this mode the device
recognizes only a single pair of input clocks (K and K) that control
both the input and output registers. This operation is identical to
the operation if the device had zero skew between the K/K and
C/C clocks. All timing parameters remain the same in this mode.
To use this mode of operation, the user must tie C and C HIGH
at power on. This function is a strap option and not alterable
during device operation.
Concurrent Transactions
The read and write ports on the CY7C1413KV18 operate
independently of one another. As each port latches the address
inputs on different clock edges, the user can read or write to any
location, regardless of the transaction on the other port. If the
ports access the same location when a read follows a write in
successive clock cycles, the SRAM delivers the most recent
information associated with the specified address location. This
includes forwarding data from a write cycle that was initiated on
the previous K clock rise.
Read access and write access must be scheduled such that one
transaction is initiated on any clock cycle. If both ports are
selected on the same K clock rise, the arbitration depends on the
previous state of the SRAM. If both ports are deselected, the
read port takes priority. If a read was initiated on the previous
cycle, the write port takes priority (as read operations cannot be
initiated on consecutive cycles). If a write was initiated on the
previous cycle, the read port takes priority (as write operations
cannot be initiated on consecutive cycles). Therefore, asserting
both port selects active from a deselected state results in alternating read or write operations being initiated, with the first
access being a read.
Depth Expansion
The CY7C1413KV18 has a port select input for each port. This
enables for easy depth expansion. Both port selects are sampled
on the rising edge of the positive input clock only (K). Each port
select input can deselect the specified port. Deselecting a port
does not affect the other port. All pending transactions (read and
write) are completed before the device is deselected.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to allow the SRAM to adjust its output
driver impedance. The value of RQ must be 5 × the value of the
intended line impedance driven by the SRAM, the allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175 and 350 , with VDDQ = 1.5 V. The
output impedance is adjusted every 1024 cycles upon power-up
to account for drifts in supply voltage and temperature.
Echo Clocks
Echo clocks are provided on the QDR II to simplify data capture
on high speed systems. Two echo clocks are generated by the
QDR II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free running clocks and are
synchronized to the output clock of the QDR II. In the single clock
mode, CQ is generated with respect to K and CQ is generated
with respect to K. The timing for the echo clocks is shown in the
Switching Characteristics on page 26.
Page 9 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
PLL
These chips use a PLL that is designed to function between
120 MHz and the specified maximum clock frequency. During
power up, when the DOFF is tied HIGH, the PLL is locked after
20 s of stable clock. The PLL can also be reset by slowing or
stopping the input clocks K and K for a minimum of 30 ns.
However, it is not necessary to reset the PLL to lock to the
desired frequency. The PLL automatically locks 20 s after a
stable clock is presented. The PLL may be disabled by applying
ground to the DOFF pin. When the PLL is turned off, the device
behaves in QDR I mode (with one cycle latency and a longer
access time).
Application Example
Figure 2 shows four QDR II used in an application.
Figure 2. Application Example (Width Expansion)
SRAM#1
CQ/CQ
Q[x:0]
RPS WPS BWS C C K K
D[x:0]
A
ZQ
RQ
SRAM#2
CQ/CQ
Q[x:0]
RPS WPS BWS C C K K
D[x:0]
A
ZQ
RQ
DATA IN[2x:0]
DATA OUT [2x:0]
ADDRESS
RPS
WPS
BWS
CLKIN1/CLKIN1
CLKIN2/CLKIN2
SOURCE K
SOURCE K
DELAYED K
DELAYED K
FPGA / ASIC
Document Number: 001-57826 Rev. *L
Page 10 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Truth Table
The truth table for CY7C1411KV18, CY7C1426KV18, CY7C1413KV18, and CY7C1415KV18 follows.[2, 3, 4, 5, 6, 7]
Operation
K
RPS WPS
[8]
DQ
DQ
DQ
DQ
[9]
D(A) at K(t + 1) D(A + 1) at K(t + 1) D(A + 2) at K(t + 2) D(A + 3) at K(t + 2)
Write cycle:
Load address on the rising
edge of K; input write data
on two consecutive K and
K rising edges.
L–H
H
Read cycle:
Load address on the rising
edge of K; wait one and a
half cycle; read data on
two consecutive C and C
rising edges.
L–H
L[9]
X
Q(A) at C(t + 1) Q(A + 1) at C(t + 2) Q(A + 2) at C(t + 2) Q(A + 3) at C(t + 3)
NOP: No operation
L–H
H
H
D=X
Q = High Z
D=X
Q = High Z
D=X
Q = High Z
D=X
Q = High Z
Stopped
X
X
Previous state
Previous state
Previous state
Previous state
Standby: Clock stopped
L
Notes
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
3. Device powers up deselected with the outputs in a tristate condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A +3 represents the address sequence in the burst.
5. “t” represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. Ensure that when the clock is stopped K = K and C = C = HIGH. This is not essential, but permits most rapid restart by overcoming transmission line charging
symmetrically.
8. If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.
9. This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the
second read or write request.
Document Number: 001-57826 Rev. *L
Page 11 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Write Cycle Descriptions
The write cycle description table for CY7C1411KV18 and CY7C1413KV18 follows. [10, 11]
BWS0/ BWS1/
K
K
L
L–H
–
L
L
–
L
H
L–H
L
H
–
H
L
L–H
H
L
–
H
H
L–H
H
H
–
NWS0
NWS1
L
Comments
During the data portion of a write sequence
CY7C1411KV18 both nibbles (D[7:0]) are written into the device.
CY7C1413KV18 both bytes (D[17:0]) are written into the device.
L–H During the data portion of a write sequence:
CY7C1411KV18 both nibbles (D[7:0]) are written into the device.
CY7C1413KV18 both bytes (D[17:0]) are written into the device.
–
During the data portion of a write sequence:
CY7C1411KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1413KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L–H During the data portion of a write sequence
CY7C1411KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1413KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
–
During the data portion of a write sequence
CY7C1411KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1413KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
L–H During the data portion of a write sequence
CY7C1411KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1413KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
–
No data is written into the devices during this portion of a write operation.
L–H No data is written into the devices during this portion of a write operation.
Write Cycle Descriptions
The write cycle description table for CY7C1426KV18 follows. [10, 11]
BWS0
K
K
L
L–H
–
L
–
H
L–H
H
–
Comments
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
L–H During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Notes
10. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
11. Is based on a write cycle that was initiated in accordance with the Truth Table on page 11. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on different
portions of a write cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-57826 Rev. *L
Page 12 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Write Cycle Descriptions
The write cycle description table for CY7C1415KV18 follows. [12, 13]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L–H
–
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
–
L
H
H
H
L–H
L
H
H
H
–
H
L
H
H
L–H
H
L
H
H
–
H
H
L
H
L–H
H
H
L
H
–
H
H
H
L
L–H
H
H
H
L
–
H
H
H
H
L–H
H
H
H
H
–
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
–
During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[17:9]) is written into the
device. D[8:0] and D[35:18] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into the
device. D[8:0] and D[35:18] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Notes
12. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
13. Is based on a write cycle that was initiated in accordance with the Truth Table on page 11. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on different
portions of a write cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-57826 Rev. *L
Page 13 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8 V I/O logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternatively be connected to VDD through a pull up resistor. TDO
must be left unconnected. Upon power-up, the device comes up
in a reset state, which does not interfere with the operation of the
device.
Test Access Port
Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information about
loading the instruction register, see the TAP Controller State
Diagram on page 16. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 20).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed when the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a high Z state.
TAP Registers
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Document Number: 001-57826 Rev. *L
Instruction Register
Three-bit instructions are serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in TAP Controller Block Diagram on
page 17. Upon power-up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that is placed between TDI and
TDO pins. This enables shifting of data through the SRAM with
minimal delay. The bypass register is set LOW (VSS) when the
BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions are
used to capture the contents of the input and output ring.
The Boundary Scan Order on page 21 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 20.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
Codes on page 20. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in this section in detail.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Page 14 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
IDCODE
The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power up or whenever the TAP controller is supplied a
Test-Logic-Reset state.
SAMPLE Z
The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a high Z state until the next command is supplied during the
Update IR state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.
The TAP controller clock can only operate at a frequency up to
20 MHz, while the SRAM clock operates more than an order of
magnitude faster. Because there is a large difference in the clock
frequencies, it is possible that during the Capture-DR state, an
input or output undergoes a transition. The TAP may then try to
capture a signal while in transition (metastable state). This does
not harm the device, but there is no guarantee as to the value
that is captured. Repeatable results may not be possible.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
Document Number: 001-57826 Rev. *L
PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
EXTEST
The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.
EXTEST OUTPUT BUS TRISTATE
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tristate mode.
The boundary scan register has a special bit located at bit #108.
When this scan cell, called the “extest output bus tristate,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a
high Z condition.
This bit is set by entering the SAMPLE/PRELOAD or EXTEST
command, and then shifting the desired bit into that cell, during
the Shift-DR state. During Update-DR, the value loaded into that
shift-register cell latches into the preload register. When the
EXTEST instruction is entered, this bit directly controls the output
Q-bus pins. Note that this bit is preset HIGH to enable the output
when the device is powered up, and also when the TAP controller
is in the Test-Logic-Reset state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Page 15 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
TAP Controller State Diagram
The state diagram for the TAP controller follows. [14]
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
SELECT
DR-SCAN
1
1
SELECT
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
SHIFT-DR
0
SHIFT-IR
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-IR
1
0
1
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-IR
UPDATE-DR
1
1
0
PAUSE-DR
0
0
0
1
0
Note
14. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document Number: 001-57826 Rev. *L
Page 16 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
TAP Controller Block Diagram
0
Bypass Register
2
Selection
Circuitry
TDI
1
0
Selection
Circuitry
Instruction Register
31
30
29
.
.
2
1
0
1
0
TDO
Identification Register
108
.
.
.
.
2
Boundary Scan Register
TCK
TAP Controller
TMS
TAP Electrical Characteristics
Over the Operating Range
Parameter [15, 16, 17]
Description
Test Conditions
Min
Max
Unit
VOH1
Output HIGH voltage
IOH =2.0 mA
1.4
–
V
VOH2
Output HIGH voltage
IOH =100 A
1.6
–
V
VOL1
Output LOW voltage
IOL = 2.0 mA
–
0.4
V
VOL2
Output LOW voltage
IOL = 100 A
–
0.2
V
VIH
Input HIGH voltage
VIL
Input LOW voltage
IX
Input and output load current
0.65 × VDD VDD + 0.3
GND VI VDD
V
–0.3
0.35 × VDD
V
–5
5
A
Notes
15. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics on page 23.
16. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2).
17. All voltage referenced to Ground.
Document Number: 001-57826 Rev. *L
Page 17 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
TAP AC Switching Characteristics
Over the Operating Range
Parameter [18, 19]
Description
Min
Max
Unit
50
–
ns
tTCYC
TCK clock cycle time
tTF
TCK clock frequency
–
20
MHz
tTH
TCK clock HIGH
20
–
ns
tTL
TCK clock LOW
20
–
ns
tTMSS
TMS set-up to TCK clock rise
5
–
ns
tTDIS
TDI set-up to TCK clock rise
5
–
ns
tCS
Capture set-up to TCK rise
5
–
ns
tTMSH
TMS hold after TCK clock rise
5
–
ns
tTDIH
TDI hold after clock rise
5
–
ns
tCH
Capture hold after clock rise
5
–
ns
tTDOV
TCK clock LOW to TDO valid
–
10
ns
tTDOX
TCK clock LOW to TDO invalid
0
–
ns
Setup Times
Hold Times
Output Times
Notes
18. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
19. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document Number: 001-57826 Rev. *L
Page 18 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
TAP Timing and Test Conditions
Figure 3 shows the TAP timing and test conditions. [20]
Figure 3. TAP Timing and Test Conditions
0.9V
ALL INPUT PULSES
1.8V
50
0.9V
TDO
0V
Z0 = 50
(a)
CL = 20 pF
tTH
GND
tTL
Test Clock
TCK
tTMSH
tTMSS
tTCYC
Test Mode Select
TMS
tTDIS
tTDIH
Test Data In
TDI
Test Data Out
TDO
tTDOV
tTDOX
Note
20. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document Number: 001-57826 Rev. *L
Page 19 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Identification Register Definitions
Instruction Field
Value
CY7C1411KV18
CY7C1426KV18
CY7C1413KV18
CY7C1415KV18
000
000
000
000
Revision number
(31:29)
Cypress device ID
(28:12)
Cypress JEDEC ID
(11:1)
Description
Version number.
11010011011000111 11010011011001111 11010011011010111 11010011011100111 Defines the type of
SRAM.
00000110100
00000110100
00000110100
00000110100
1
1
1
1
ID register
presence (0)
Allows unique
identification of
SRAM vendor.
Indicates the
presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary scan
109
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a high Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the input and output ring contents. Places the boundary scan register between TDI
and TDO. Does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Document Number: 001-57826 Rev. *L
Page 20 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
28
10G
56
6A
84
1J
1
6P
29
9G
57
5B
85
2J
2
6N
30
11F
58
5A
86
3K
3
7P
31
11G
59
4A
87
3J
4
7N
32
9F
60
5C
88
2K
5
7R
33
10F
61
4B
89
1K
6
8R
34
11E
62
3A
90
2L
7
8P
35
10E
63
2A
91
3L
8
9R
36
10D
64
1A
92
1M
9
11P
37
9E
65
2B
93
1L
10
10P
38
10C
66
3B
94
3N
11
10N
39
11D
67
1C
95
3M
12
9P
40
9C
68
1B
96
1N
13
10M
41
9D
69
3D
97
2M
14
11N
42
11B
70
3C
98
3P
15
9M
43
11C
71
1D
99
2N
16
9N
44
9B
72
2C
100
2P
17
11L
45
10B
73
3E
101
1P
18
11M
46
11A
74
2D
102
3R
19
9L
47
10A
75
2E
103
4R
20
10L
48
9A
76
1E
104
4P
21
11K
49
8B
77
2F
105
5P
22
10K
50
7C
78
3F
106
5N
23
9J
51
6C
79
1G
107
5R
24
9K
52
8A
80
1F
108
Internal
25
10J
53
7A
81
3G
26
11J
54
7B
82
2G
27
11H
55
6B
83
1H
Document Number: 001-57826 Rev. *L
Page 21 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Power Up Sequence in QDR II SRAM
PLL Constraints
QDR II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
■
PLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var.
■
The PLL functions at frequencies down to 120 MHz.
■
If the input clock is unstable and the PLL is enabled, then the
PLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide 20 s of stable clock to
relock to the desired clock frequency.
Power Up Sequence
■
Apply power and drive DOFF either HIGH or LOW (All other
inputs can be HIGH or LOW).
❐ Apply VDD before VDDQ.
❐ Apply VDDQ before VREF or at the same time as VREF.
❐ Drive DOFF HIGH.
■
Provide stable DOFF (HIGH), power and clock (K, K) for 20 s
to lock the PLL.
~
~
Figure 4. Power Up Waveforms
K
K
~
~
Unstable Clock
> 20μs Stable clock
Start Normal
Operation
Clock Start (Clock Starts after V DD / V DDQ Stable)
VDD / VDDQ
DOFF
Document Number: 001-57826 Rev. *L
V DD / V DDQ Stable (< +/- 0.1V DC per 50ns )
Fix HIGH (or tie to VDDQ)
Page 22 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Maximum Ratings
Operating Range
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Range
Storage temperature ................................ –65 C to +150 C
Commercial
Ambient temperature
with power applied ................................... –55 C to +125 C
Industrial
Supply voltage on VDD relative to GND .......–0.5 V to +2.9 V
Supply voltage on VDDQ relative to GND ...... –0.5 V to +VDD
DC input voltage
VDD[22]
VDDQ[22]
0 C to +70 C
1.8 ± 0.1 V
1.4 V to
VDD
–40 °C to +85 °C
Neutron Soft Error Immunity
DC applied to outputs in high Z ........ –0.5 V to VDDQ + 0.3 V
[21]
Ambient
Temperature (TA)
........................... –0.5 V to VDD + 0.3 V
Current into outputs (LOW) ........................................ 20 mA
Static discharge voltage
(MIL-STD-883, M. 3015) ......................................... > 2001 V
Latch-up current .................................................... > 200 mA
Parameter
Description
Test
Conditions Typ
Max*
Unit
LSBU
Logical
single-bit
upsets
25 °C
197
216
FIT/
Mb
LMBU
Logical
multi-bit
upsets
25 °C
0
0.01
FIT/
Mb
Single event
latch-up
85 °C
0
0.1
FIT/
Dev
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical 2, 95% confidence limit calculation. For more details refer to Application
Note “Accelerated Neutron SER Testing and Calculation of Terrestrial Failure
Rates – AN54908”.
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Over the Operating Range
Parameter [23]
Description
VDD
Power supply voltage
Test Conditions
Min
Typ
Max
Unit
1.7
1.8
1.9
V
VDDQ
I/O supply voltage
1.4
1.5
VDD
V
VOH
Output HIGH voltage
Note 24
VDDQ/2 – 0.12
–
VDDQ/2 + 0.12
V
VOL
Output LOW voltage
Note 25
VDDQ/2 – 0.12
–
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH voltage
IOH =0.1 mA, Nominal Impedance
VDDQ – 0.2
–
VDDQ
V
IOL = 0.1 mA, Nominal Impedance
VOL(LOW)
Output LOW voltage
VSS
–
0.2
V
VIH
Input HIGH voltage
VREF + 0.1
–
VDDQ + 0.3
V
VIL
Input LOW voltage
–0.3
–
VREF – 0.1
V
IX
Input leakage current
GND VI VDDQ
5
–
5
A
IOZ
Output leakage current
GND VI VDDQ, Output Disabled
VREF
Input reference voltage [26] Typical Value = 0.75 V
5
–
5
A
0.68
0.75
0.95
V
Notes
21. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2).
22. Power-up: Assumes a linear ramp from 0 V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
23. All voltage referenced to Ground.
24. Output are impedance controlled. IOH = (VDDQ/2)/(RQ/5) for values of 175 ohms RQ 350 ohms.
25. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 ohms RQ 350 ohms.
26. VREF(min) = 0.68 V or 0.46 VDDQ, whichever is larger, VREF(max) = 0.95 V or 0.54 VDDQ, whichever is smaller.
Document Number: 001-57826 Rev. *L
Page 23 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Electrical Characteristics (continued)
Over the Operating Range
DC Electrical Characteristics (continued)
Over the Operating Range
Parameter [23]
IDD [27]
ISB1
Description
VDD operating supply
Automatic power-down
current
Test Conditions
Min
Typ
Max
Unit
VDD = Max, IOUT = 0 mA, 333 MHz (× 9)
f = fMAX = 1/tCYC
(× 18)
–
–
560
mA
–
–
570
(× 36)
–
–
790
300 MHz (× 8)
–
–
520
(× 9)
–
–
520
(× 18)
–
–
540
(× 36)
–
–
730
250 MHz (× 8)
–
–
460
(× 9)
–
–
460
(× 18)
–
–
470
(× 36)
–
–
640
333 MHz (× 9)
–
–
280
(× 18)
–
–
280
(× 36)
–
–
280
300 MHz (× 8)
–
–
270
Max VDD,
both ports deselected,
VIN VIH or VIN VIL
f = fMAX = 1/tCYC,
inputs static
(× 9)
–
–
270
(× 18)
–
–
270
(× 36)
–
–
270
250 MHz (× 8)
–
–
260
(× 9)
–
–
260
(× 18)
–
–
260
(× 36)
–
–
260
mA
mA
mA
mA
mA
Note
27. The operation current is calculated with 50% read cycle and 50% write cycle.
Document Number: 001-57826 Rev. *L
Page 24 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
AC Electrical Characteristics
Over the Operating Range
Parameter [28]
Description
Test Conditions
Min
Typ
Max
Unit
VIH
Input HIGH voltage
VREF + 0.2
–
–
V
VIL
Input LOW voltage
–
–
VREF – 0.2
V
Max
Unit
4
pF
4
pF
Capacitance
Parameter [29]
Description
CIN
Input capacitance
CO
Output capacitance
Test Conditions
TA = 25 C, f = 1 MHz, VDD = 1.8 V, VDDQ = 1.5 V
Thermal Resistance
Parameter [29]
JA (0 m/s)
Description
Thermal resistance
(junction to ambient)
JA (1 m/s)
165-ball FBGA Unit
Package
Test Conditions
Socketed on a 170 × 220 × 2.35 mm, eight-layer printed
circuit board
JA (3 m/s)
16.72
°C/W
15.67
°C/W
14.92
°C/W
JB
Thermal resistance
(junction to board)
13.67
°C/W
JC
Thermal resistance
(junction to case)
4.54
°C/W
AC Test Loads and Waveforms
Figure 5. AC Test Loads and Waveforms
VREF = 0.75 V
VREF
0.75 V
VREF
OUTPUT
Z0 = 50
Device
Under
Test
ZQ
RL = 50
R = 50
ALL INPUT PULSES
1.25 V
0.75 V
OUTPUT
Device
Under
VREF = 0.75 V Test ZQ
RQ =
250
(a)
0.75 V
INCLUDING
JIG AND
SCOPE
5 pF
[30]
0.25 V
Slew Rate = 2 V/ns
RQ =
250
(b)
Notes
28. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 1.5 V (Pulse width less than tCYC/2).
29. Tested initially and after any design or process change that may affect these parameters.
30. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , VDDQ = 1.5 V, input
pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 5.
Document Number: 001-57826 Rev. *L
Page 25 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Switching Characteristics
Over the Operating Range
Parameters [31, 32]
Cypress Consortium
Parameter Parameter
333 MHz
Description
VDD(typical) to the first access [33]
tPOWER
300 MHz
250 MHz
Unit
Min
Max
Min
Max
Min
Max
1
–
1
–
1
–
ms
tCYC
tKHKH
K clock and C clock cycle time
3.0
8.4
3.3
8.4
4.0
8.4
ns
tKH
tKHKL
Input clock (K/K; C/C) HIGH
1.20
–
1.32
–
1.6
–
ns
tKL
tKLKH
Input clock (K/K; C/C) LOW
1.20
–
1.32
–
1.6
–
ns
tKHKH
tKHKH
K clock rise to K clock rise and C
to C rise (rising edge to rising
edge)
1.35
–
1.49
–
1.8
–
ns
tKHCH
tKHCH
K/K clock rise to C/C clock rise
(rising edge to rising edge)
0
1.30
0
1.45
0
1.8
ns
Setup Times
tSA
tAVKH
Address set-up to K clock rise
0.4
–
0.4
–
0.5
–
ns
tSC
tIVKH
Control set-up to K clock rise
(RPS, WPS)
0.4
–
0.4
–
0.5
–
ns
tSCDDR
tIVKH
Double data rate control setup to
clock (K/K) rise (BWS0, BWS1,
BWS2, BWS3)
0.3
–
0.3
–
0.35
–
ns
tSD
tDVKH
D[X:0] set-up to clock (K/K) rise
0.3
–
0.3
–
0.35
–
ns
tHA
tKHAX
Address hold after K clock rise
0.4
–
0.4
–
0.5
–
ns
tHC
tKHIX
Control hold after K clock rise
(RPS, WPS)
0.4
–
0.4
–
0.5
–
ns
tHCDDR
tKHIX
Double data rate control hold
after clock (K/K) rise (BWS0,
BWS1, BWS2, BWS3)
0.3
–
0.3
–
0.35
–
ns
tHD
tKHDX
D[X:0] hold after clock (K/K) rise
0.3
–
0.3
–
0.35
–
ns
Hold Times
Notes
31. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 , VDDQ = 1.5 V, input
pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 5 on page 25.
32. When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is operated
and outputs data with the output timings of that frequency range.
33. This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD(minimum) initially before a read or write operation is initiated.
Document Number: 001-57826 Rev. *L
Page 26 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Switching Characteristics (continued)
Over the Operating Range
Parameters [31, 32]
Cypress Consortium
Parameter Parameter
333 MHz
Description
300 MHz
250 MHz
Min
Max
Min
Max
Min
Max
Unit
Output Times
tCO
tCHQV
C/C clock rise (or K/K in single
clock mode) to data valid
–
0.45
–
0.45
–
0.45
ns
tDOH
tCHQX
Data output hold after output C/C
clock rise (active to active)
–0.45
–
–0.45
–
–0.45
–
ns
tCCQO
tCHCQV
C/C clock rise to echo clock valid
–
0.45
–
0.45
–
0.45
ns
tCQOH
tCHCQX
Echo clock hold after C/C clock
rise
–0.45
–
–0.45
–
–0.45
–
ns
tCQD
tCQHQV
Echo clock high to data valid
0.30
ns
tCQDOH
tCQHQX
Echo clock high to data invalid
–0.25
–
–0.27
–
–0.30
–
ns
tCQH
tCQHCQL
Output clock (CQ/CQ) HIGH [34]
1.25
–
1.4
–
1.75
–
ns
tCQHCQH
tCQHCQH
CQ clock rise to CQ clock rise
(rising edge to rising edge) [34]
1.25
–
1.4
–
1.75
–
ns
tCHZ
tCHQZ
Clock (C/C) rise to high Z (active
to high Z) [35, 36]
–
0.45
–
0.45
–
0.45
ns
tCLZ
tCHQX1
Clock (C/C) rise to low Z [35, 36]
–0.45
–
–0.45
–
–0.45
–
ns
tKC Var
Clock phase jitter
–
0.20
–
0.20
–
0.20
ns
20
–
20
–
20
–
s
30
–
30
–
30
–
ns
0.25
0.27
PLL Timing
tKC Var
tKC lock
tKC lock
PLL lock time (K, C)
tKC Reset
tKC Reset
K static to PLL reset
[37]
Notes
34. These parameters are extrapolated from the input timing parameters (tCYC/2 – 250 ps, where 250 ps is the internal jitter). These parameters are only guaranteed by
design and are not tested in production
35. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of Figure 5 on page 25. Transition is measured ±100 mV from steady-state voltage.
36. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.
37. For frequencies 300 MHz or below, the Cypress QDR II devices surpass the QDR consortium specification for PLL lock time (tKC lock) of 20 µs (min. spec.) and will
lock after 1024 clock cycles (min. spec.), after a stable clock is presented, per the previous 90 nm version.
Document Number: 001-57826 Rev. *L
Page 27 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Switching Waveforms
Figure 6. Read/Write/Deselect Sequence [38, 39, 40]
NOP
1
WRITE
3
READ
2
READ
4
NOP
6
WRITE
5
7
K
t KH
t
tKL
t KHKH
CYC
K
RPS
t SC
tHC
t SC
t HC
WPS
A0
A
tSA
A1
A3
A2
t HD
t HA
t
t SD
SD
D
D10
D11
Q00
Q
t KHCH
t KHCH
t HD
D13
D12
Q01
Q02
tCO
Q03
D30
D31
Q20
D33
D32
Q22
Q21
Q23
t CHZ
tCQDOH
t CLZ
t DOH
t CQD
C
t CYC
t KHKH
t KH
t KL
C
t CCQO
t CQOH
CQ
t CQH
t CQHCQH
t CQOH
t CCQO
CQ
DON’T CARE
UNDEFINED
Notes
38. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
39. Outputs are disabled (high Z) one clock cycle after a NOP.
40. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11, Q22 = D12, and Q23 = D13. Write data is forwarded immediately as read results. This note
applies to the whole diagram.
Document Number: 001-57826 Rev. *L
Page 28 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Ordering Information
The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local
sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at
http://www.cypress.com/products
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office
closest to you, visit us at http://www.cypress.com/go/datasheet/offices.
Speed
(MHz)
333
Ordering Code
CY7C1413KV18-333BZI
Package
Diagram
CY7C1426KV18-300BZC
Operating
Range
51-85180 165-ball FBGA (13 × 15 × 1.4 mm)
CY7C1413KV18-333BZXI
300
Package Type
Industrial
165-ball FBGA (13 × 15 × 1.4 mm) Pb-free
51-85180 165-ball FBGA (13 × 15 × 1.4 mm)
Commercial
CY7C1413KV18-300BZC
CY7C1411KV18-300BZC
CY7C1426KV18-300BZXC
165-ball FBGA (13 × 15 × 1.4 mm) Pb-free
CY7C1413KV18-300BZXC
CY7C1415KV18-300BZXC
CY7C1415KV18-300BZXI
250
CY7C1426KV18-250BZC
165-ball FBGA (13 × 15 × 1.4 mm) Pb-free
51-85180 165-ball FBGA (13 × 15 × 1.4 mm)
Industrial
Commercial
CY7C1413KV18-250BZC
CY7C1415KV18-250BZC
CY7C1411KV18-250BZC
CY7C1413KV18-250BZXC
165-ball FBGA (13 × 15 × 1.4 mm) Pb-free
CY7C1415KV18-250BZXC
CY7C1411KV18-250BZXC
CY7C1413KV18-250BZI
165-ball FBGA (13 × 15 × 1.4 mm)
Industrial
CY7C1415KV18-250BZI
CY7C1413KV18-250BZXI
165-ball FBGA (13 × 15 × 1.4 mm) Pb-free
CY7C1415KV18-250BZXI
Ordering Code Definitions
CY 7
C 14XX K V18 - XXX BZ X
X
Temperature Range: X = C or I
C = Commercial = 0 C to +70 C; I = Industrial = –40 °C to +85 °C
X = Pb-free; X Absent = Leaded
Package Type:
BZ = 165-ball FBGA
Speed Grade: XXX = 333 MHz or 300 MHz or 250 MHz
V18 = 1.8 V VDD
Process Technology: K = 65 nm
Part Identifier: 14XX = 1413 or 1415 or 1426 or 1411
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 001-57826 Rev. *L
Page 29 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Package Diagram
Figure 7. 165-ball FBGA (13 × 15 × 1.4 mm) BB165D/BW165D (0.5 Ball Diameter) Package Outline, 51-85180
51-85180 *G
Document Number: 001-57826 Rev. *L
Page 30 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Acronyms
Acronym
Document Conventions
Description
Units of Measure
DDR
Double Data Rate
FBGA
Fine-Pitch Ball Grid Array
°C
degree Celsius
HSTL
High-Speed Transceiver Logic
MHz
megahertz
I/O
Input/Output
µA
microampere
JTAG
Joint Test Action Group
µs
microsecond
LSB
Least Significant Bit
mA
milliampere
mm
millimeter
ms
millisecond
ns
nanosecond
MSB
Most Significant Bit
PLL
Phase Locked Loop
QDR
Quad Data Rate
SRAM
Static Random Access Memory
TAP
Test Access Port
TCK
Test Clock
TDI
Test Data-In
TDO
Test Data-Out
TMS
Test Mode Select
Document Number: 001-57826 Rev. *L
Symbol
Unit of Measure
ohm
%
percent
pF
picofarad
V
volt
W
watt
Page 31 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Document History Page
Document Title: CY7C1411KV18/CY7C1426KV18/CY7C1413KV18/CY7C1415KV18, 36-Mbit QDR® II SRAM Four-Word Burst
Architecture
Document Number: 001-57826
Rev.
ECN No.
Orig. of
Change
Submission
Date
Description of change
**
2816620
VKN / AESA
11/27/2009
New data sheet.
*A
3018546
NJY
10/21/2010
Changed status from Preliminary to Final.
Added Ordering Code Definitions.
Updated Package Diagram.
Minor edits.
Updated to new template.
*B
3165654
NJY
02/08/2011
Updated Switching Characteristics:
Added Note 37 and referred the same note in description of tKC lock parameter.
Updated Ordering Information (Updated part numbers).
Added Acronyms and Units of Measure.
*C
3425040
PRIT
10/28/2011
Updated Ordering Information (Updated part numbers).
*D
3722900
PRIT
08/24/2012
Updated Selection Guide (Removed 167 MHz and 200 MHz frequencies
related information, updated value of Maximum Operating Current as Not
Offered for CY7C1411KV18 for 333 MHz frequency).
Updated Electrical Characteristics (Updated DC Electrical Characteristics
(Removed 167 MHz and 200 MHz frequencies related information, removed
333 MHz frequency related information (corresponding to CY7C1411KV18))).
Updated Switching Characteristics (Removed 167 MHz and 200 MHz
frequencies related information).
Updated Ordering Information (Updated part numbers).
Updated Package Diagram (spec 51-85180 (Changed revision from *C to *E)).
*E
3793643
PRIT
10/25/2012
Updated Package Diagram (spec 51-85180 (Changed revision from *E to *F)).
*F
3860026
PRIT
01/10/2013
Updated Ordering Information (Updated part numbers).
*G
4373734
PRIT
05/08/2014
Updated Application Example:
Updated Figure 2.
Updated Thermal Resistance:
Updated values of JA parameter.
Included JB parameter and its details.
Updated to new template.
*H
4388215
PRIT
05/23/2014
Updated Ordering Information (Updated part numbers).
*I
4568760
PRIT
11/12/2014
Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
Updated Ordering Information:
Updated part numbers.
*J
5060318
PRIT
12/22/2015
Updated Package Diagram:
spec 51-85180 – Changed revision from *F to *G.
Updated to new template.
Completing Sunset Review.
*K
5522985
PRIT
11/16/2016
Updated Ordering Information:
Updated part numbers.
Updated to new template.
Completing Sunset Review.
*L
5973141
AESATMP8
11/21/2017
Updated logo and Copyright.
Document Number: 001-57826 Rev. *L
Page 32 of 33
CY7C1411KV18/CY7C1426KV18
CY7C1413KV18/CY7C1415KV18
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC®Solutions
Products
ARM® Cortex® Microcontrollers
Automotive
cypress.com/arm
cypress.com/automotive
Clocks & Buffers
Interface
cypress.com/clocks
cypress.com/interface
Internet of Things
Memory
cypress.com/iot
cypress.com/memory
Microcontrollers
cypress.com/mcu
PSoC
cypress.com/psoc
Power Management ICs
Cypress Developer Community
Forums | WICED IOT Forums | Projects | Video | Blogs |
Training | Components
Technical Support
cypress.com/support
cypress.com/pmic
Touch Sensing
cypress.com/touch
USB Controllers
Wireless Connectivity
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6
cypress.com/usb
cypress.com/wireless
© Cypress Semiconductor Corporation, 2009-2017. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC (“Cypress”). This document,
including any software or firmware included or referenced in this document (“Software”), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress
hereby grants you a personal, non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code form, to
modify and reproduce the Software solely for use with Cypress hardware products, only internally within your organization, and (b) to distribute the Software in binary code form externally to end users
(either directly or indirectly through resellers and distributors), solely for use on Cypress hardware product units, and (2) under those claims of Cypress's patents that are infringed by the Software (as
provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification, translation, or compilation
of the Software is prohibited.
TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
OR ACCOMPANYING HARDWARE, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. To the extent
permitted by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any liability arising out of the application or use of any
product or circuit described in this document. Any information provided in this document, including any sample design information or programming code, is provided only for reference purposes. It is
the responsibility of the user of this document to properly design, program, and test the functionality and safety of any application made of this information and any resulting product. Cypress products
are not designed, intended, or authorized for use as critical components in systems designed or intended for the operation of weapons, weapons systems, nuclear installations, life-support devices or
systems, other medical devices or systems (including resuscitation equipment and surgical implants), pollution control or hazardous substances management, or other uses where the failure of the
device or system could cause personal injury, death, or property damage (“Unintended Uses”). A critical component is any component of a device or system whose failure to perform can be reasonably
expected to cause the failure of the device or system, or to affect its safety or effectiveness. Cypress is not liable, in whole or in part, and you shall and hereby do release Cypress from any claim,
damage, or other liability arising from or related to all Unintended Uses of Cypress products. You shall indemnify and hold Cypress harmless from and against all claims, costs, damages, and other
liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 001-57826 Rev. *L
Revised November 21, 2017
Page 33 of 33
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