CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
36-Mbit (1M × 36/2M × 18)
Pipelined SRAM
with NoBL™ Architecture (With ECC)
36-Mbit (1M × 36/2M × 18) Pipelined SRAM with NoBL™ Architecture (With ECC)
Features
Functional Description
■
Pin-compatible and functionally equivalent to ZBT™
■
Supports 250 MHz bus operations with zero wait states
❐ Available speed grades are 250 MHz, 200 MHz, and 167 MHz
■
Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
■
Fully registered (inputs and outputs) for pipelined operation
■
Byte Write capability
■
2.5 V core power supply
■
2.5 V I/O power supply
■
Fast clock-to-output times
❐ 2.5 ns (for 250 MHz device)
■
Clock enable (CEN) pin to suspend operation
■
Synchronous self-timed writes
■
CY7C1460KV25, CY7C1462KV25, CY7C1460KVE25 and
CY7C1462KVE25 available in JEDEC-standard Pb-free
100-pin TQFP, and Pb-free and non Pb-free 165-ball FBGA
packages.
■
IEEE 1149.1 JTAG-Compatible Boundary Scan
■
Burst capability — linear or interleaved burst order
■
“ZZ” sleep mode option
■
On-chip error correction code (ECC) to reduce soft error rate
(SER)
The CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/
CY7C1462KVE25 are 2.5 V, 1M × 36/2M × 18 synchronous
pipelined burst SRAMs with No Bus Latency™ (NoBL™) logic,
respectively. They are designed to support unlimited true
back-to-back read/write operations with no wait states. The
CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/
CY7C1462KVE25 are equipped with the advanced NoBL logic
required to enable consecutive read/write operations with data
being transferred on every clock cycle. This feature dramatically
improves the throughput of data in systems that require frequent
write/read transitions. The CY7C1460KV25/CY7C1462KV25/
CY7C1460KVE25/CY7C1462KVE25 are pin-compatible and
functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the clock enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle. Write operations are controlled by the byte write selects
for
CY7C1460KV25/CY7C1460KVE25
and
BWa–BWd
BWa–BWb for CY7C1462KV25/CY7C1462KVE25 and a write
enable (WE) input. All writes are conducted with on-chip
synchronous self-timed write circuitry.
Three synchronous chip enables (CE1, CE2, CE3) and an
asynchronous output enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
Selection Guide
Description
250 MHz
200 MHz
167 MHz
Unit
2.5
3.2
3.4
ns
× 18
220
190
170
mA
× 36
240
210
190
Maximum access time
Maximum operating current
Cypress Semiconductor Corporation
Document Number: 001-66679 Rev. *J
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised February 7, 2018
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Logic Block Diagram – CY7C1460KV25
ADDRESS
REGISTER 0
A0, A1, A
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
MODE
ADV/LD
C
C
CLK
CEN
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
ADV/LD
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
BWa
BWb
BWc
BWd
WRITE
DRIVERS
O
U
T
P
U
T
S
E
N
S
E
MEMORY
ARRAY
R
E
G
I
S
T
E
R
S
A
M
P
S
WE
S
T
E
E
R
I
N
G
E
INPUT
REGISTER 1 E
OE
CE1
CE2
CE3
O
U
T
P
U
T
D
A
T
A
INPUT
REGISTER 0
B
U
F
F
E
R
S
DQs
DQPa
DQPb
DQPc
DQPd
E
E
READ LOGIC
SLEEP
CONTROL
ZZ
Logic Block Diagram – CY7C1462KV25
A0, A1, A
ADDRESS
REGISTER 0
A1
A1'
D1
Q1
A0
BURST A0'
D0
Q0
LOGIC
MODE
CLK
CEN
ADV/LD
C
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
ADV/LD
BWa
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
BWb
WE
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
D
A
T
A
S
T
E
E
R
I
N
G
E
INPUT
REGISTER 1 E
OE
CE1
CE2
CE3
ZZ
Document Number: 001-66679 Rev. *J
O
U
T
P
U
T
B
U
F
F
E
R
S
DQs
DQPa
DQPb
E
INPUT
REGISTER 0 E
READ LOGIC
Sleep
Control
Page 2 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Logic Block Diagram – CY7C1460KVE25
ADDRESS
REGISTER 0
A0, A1, A
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
MODE
CLK
CEN
ADV/LD
C
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
S
E
N
S
E
ADV/LD
BWA
BWB
BWC
BWD
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
A
M
P
S
WE
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
E
ECC
ENCODER
OE
CE1
CE2
CE3
ZZ
Document Number: 001-66679 Rev. *J
INPUT
REGISTER 1
E
D
A
T
A
E
C
C
D
E
C
O
D
E
R
S
T
E
E
R
I
N
G
INPUT
REGISTER 0
O
U
T
P
U
T
B
U
F
F
E
R
S
DQs
DQPA
DQPB
DQPC
DQPD
E
E
READ LOGIC
SLEEP
CONTROL
Page 3 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Logic Block Diagram – CY7C1462KVE25
ADDRESS
REGISTER 0
A0, A1, A
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
MODE
CLK
CEN
ADV/LD
C
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
ADV/LD
BWA
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
BWB
WE
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
D
A
T
A
S
T
E
E
R
I
N
G
E
ECC
ENCODER
OE
CE1
CE2
CE3
ZZ
Document Number: 001-66679 Rev. *J
INPUT
REGISTER 1 E
E
C
C
O
U
T
P
U
T
D
E
C
O
D
E
R
B
U
F
F
E
R
S
DQs
DQPA
DQPB
E
INPUT
REGISTER 0 E
READ LOGIC
Sleep
Control
Page 4 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Contents
Pin Configurations ........................................................... 6
Pin Definitions .................................................................. 8
Functional Overview ........................................................ 9
Single Read Accesses ................................................ 9
Burst Read Accesses .................................................. 9
Single Write Accesses ............................................... 10
Burst Write Accesses ................................................ 10
Sleep Mode ............................................................... 10
On-Chip ECC ............................................................ 10
Interleaved Burst Address Table ............................... 11
Linear Burst Address Table ....................................... 11
ZZ Mode Electrical Characteristics ............................ 11
Truth Table ...................................................................... 12
Partial Write Cycle Description ..................................... 13
Partial Write Cycle Description ..................................... 13
IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 14
Disabling the JTAG Feature ...................................... 14
Test Access Port (TAP) ............................................. 14
PERFORMING A TAP RESET .................................. 14
TAP REGISTERS ...................................................... 14
TAP Instruction Set ................................................... 15
TAP Controller State Diagram ....................................... 16
TAP Controller Block Diagram ...................................... 16
TAP Timing ...................................................................... 16
TAP AC Switching Characteristics ............................... 17
2.5 V TAP AC Test Conditions ....................................... 18
2.5 V TAP AC Output Load Equivalent ......................... 18
TAP DC Electrical Characteristics
and Operating Conditions ............................................. 18
Document Number: 001-66679 Rev. *J
Identification Register Definitions ................................ 19
Scan Register Sizes ....................................................... 19
Identification Codes ....................................................... 19
Boundary Scan Order .................................................... 20
Maximum Ratings ........................................................... 21
Operating Range ............................................................. 21
Neutron Soft Error Immunity ......................................... 21
Electrical Characteristics ............................................... 21
Capacitance .................................................................... 23
Thermal Resistance ........................................................ 23
AC Test Loads and Waveforms ..................................... 23
Switching Characteristics .............................................. 24
Switching Waveforms .................................................... 25
Ordering Information ...................................................... 27
Ordering Code Definitions ......................................... 27
Package Diagrams .......................................................... 28
Acronyms ........................................................................ 30
Document Conventions ................................................. 30
Units of Measure ....................................................... 30
Document History Page ................................................. 31
Sales, Solutions, and Legal Information ...................... 32
Worldwide Sales and Design Support ....................... 32
Products .................................................................... 32
PSoC® Solutions ...................................................... 32
Cypress Developer Community ................................. 32
Technical Support ..................................................... 32
Page 5 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Pin Configurations
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
CY7C1462KV25
(2M × 18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
NC
NC
VDDQ
VSS
NC
DQPa
DQa
DQa
VSS
VDDQ
DQa
DQa
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
NC
NC
VSS
VDDQ
NC
NC
NC
A
A
A
A
A
A
A
A
NC/72M
VSS
VDD
A
A
A
A
A
A
A
A
NC/72M
VSS
VDD
NC/144M
NC/288M
MODE
A
A
A
A
A1
A0
Document Number: 001-66679 Rev. *J
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
NC/288M
(1M × 36)
NC
DQPb
NC
DQb
NC
DQb
VDDQ VDDQ
VSS
VSS
NC
DQb
DQb
NC
DQb
DQb
DQb
DQb
VSS
VSS
VDDQ VDDQ
DQb
DQb
DQb
DQb
NC
VSS
VDD
NC
NC
VDD
VSS
ZZ
DQb
DQa
DQa
DQb
VDDQ VDDQ
VSS
VSS
DQa
DQb
DQa
DQb
DQa DQPb
DQa
NC
VSS
VSS
VDDQ VDDQ
NC
DQa
DQa
NC
DQPa
NC
NC/144M
CY7C1460KV25/CY7C1460KVE25
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
DQc
DQc
NC
VDD
NC
VSS
DQd
DQd
VDDQ
VSS
DQd
DQd
DQd
DQd
VSS
VDDQ
DQd
DQd
DQPd
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
VSS
DQc
DQc
DQc
DQc
VSS
VDDQ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
DQPc
DQc
DQc
VDDQ
A
A
A
A
CE1
CE2
NC
NC
BWb
BWa
CE3
VDD
VSS
CLK
WE
CEN
OE
ADV/LD
A
A
A
A
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
CE1
CE2
BWd
BWc
BWb
BWa
CE3
VDD
VSS
CLK
WE
CEN
OE
ADV/LD
A
A
Figure 1. 100-pin TQFP Pinout
Page 6 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Pin Configurations (continued)
Figure(2. 165-ball FBGA Pinout
)
CY7C1460KV25/CY7C1460KVE25 (1M × 36)
1
2
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/576M
A
3
NC/1G
A
DQPc
DQc
NC
DQc
VDDQ
DQc
DQc
DQc
NC
DQd
R
MODE
4
5
6
7
8
9
10
11
A
NC
BWc
BWb
CE3
CEN
ADV/LD
A
BWa
VSS
VSS
CLK
WE
OE
A
A
NC
VDDQ
BWd
VSS
VDD
VSS
VSS
VSS
VSS
VSS
VDD
VDDQ
VDDQ
NC
DQb
DQPb
DQb
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
DQb
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
NC
VDDQ
DQb
DQc
NC
DQd
DQb
NC
DQa
DQb
ZZ
DQa
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
DQd
DQPd
DQd
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
NC
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQa
NC
DQa
DQPa
A
A
TDI
A1
TDO
A
A
A
A
A
TMS
A0
TCK
A
A
A
A
9
10
11
NC/144M NC/72M
A
CE1
CE2
NC/288M
CY7C1462KV25/CY7C1462KVE25 (2M × 18)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
2
3
4
5
6
7
8
CE1
CE2
BWb
NC
NC
CE3
CLK
CEN
ADV/LD
A
A
A
BWa
WE
VSS
OE
VSS
A
A
NC
VSS
VDD
VDDQ
VDDQ
NC
NC
DQPa
DQa
NC/576M
A
NC/1G
A
NC
NC
NC
DQb
VDDQ
VDDQ
VSS
VDD
VSS
VSS
VSS
VSS
NC
DQb
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
NC
NC
NC
DQb
DQb
VDDQ
VDDQ
NC
VDDQ
VDD
VDD
VDD
VDD
VDDQ
VDDQ
NC
VDDQ
NC
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
DQb
NC
NC
NC
NC
DQa
DQa
DQa
ZZ
NC
DQb
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
DQb
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
DQb
DQPb
NC
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
NC
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQa
NC
NC
NC
A
A
TDI
A1
TDO
A
A
A
A
A
TMS
A0
TCK
A
A
A
NC/144M NC/72M
MODE
A
Document Number: 001-66679 Rev. *J
NC/288M
A
Page 7 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Pin Definitions
Pin Name
A0, A1, A
I/O Type
Pin Description
Input-synchronous
Address inputs used to select one of the address locations. Sampled at the rising
edge of the CLK.
BWa, BWb, BWc, BWd Input-synchronous
Byte write select inputs, active LOW. Qualified with WE to conduct writes to the
SRAM. Sampled on the rising edge of CLK. BWa controls DQa and DQPa, BWb
controls DQb and DQPb, BWc controls DQc and DQPc, BWd controls DQd and DQPd
WE
Input-synchronous
Write enable input, active LOW. Sampled on the rising edge of CLK if CEN is active
LOW. This signal must be asserted LOW to initiate a write sequence.
ADV/LD
Input-synchronous
Advance/load input used to advance the on-chip address counter or load a new
address. When HIGH (and CEN is asserted LOW) the internal burst counter is
advanced. When LOW, a new address can be loaded into the device for an access.
After being deselected, ADV/LD should be driven LOW in order to load a new
address.
CLK
Input-clock
Clock input. Used to capture all synchronous inputs to the device. CLK is qualified
with CEN. CLK is only recognized if CEN is active LOW.
CE1
Input-synchronous
Chip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE2 and CE3 to select/deselect the device.
CE2
Input-synchronous
Chip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE3 to select/deselect the device.
CE3
Input-synchronous
Chip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in
conjunction with CE1 and CE2 to select/deselect the device.
OE
Input-asynchronous
Output enable, active LOW. Combined with the synchronous logic block inside the
device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to
behave as outputs. When deasserted HIGH, I/O pins are tristated, and act as input
data pins. OE is masked during the data portion of a write sequence, during the first
clock when emerging from a deselected state and when the device has been
deselected.
CEN
Input-synchronous
Clock enable input, active LOW. When asserted LOW the clock signal is recognized
by the SRAM. When deasserted HIGH the clock signal is masked. Since deasserting
CEN does not deselect the device, CEN can be used to extend the previous cycle
when required.
DQa, DQb, DQc, DQd
I/O-synchronous
Bidirectional data I/O lines. As inputs, they feed into an on-chip data register that
is triggered by the rising edge of CLK. As outputs, they deliver the data contained in
the memory location specified by AX during the previous read cycle. The direction of
the pins is controlled by OE and the internal control logic. When OE is asserted LOW,
the pins can behave as outputs. When HIGH, DQa–DQd are placed in a tristate
condition. The outputs are automatically tristated during the data portion of a write
sequence, during the first clock when emerging from a deselected state, and when
the device is deselected, regardless of the state of OE.
DQPa, DQPb, DQPc,
DQPd
I/O-synchronous
Bidirectional data parity I/O lines. Functionally, these signals are identical to
DQ[31:0]. During write sequences, DQPa is controlled by BWa, DQPb is controlled by
BWb, DQPc is controlled by BWc, and DQPd is controlled by BWd, DQPe is controlled
by BWe, DQPf is controlled by BWf, DQPg is controlled by BWg, DQPh is controlled
by BWh.
MODE
Input strap pin
Mode input. Selects the burst order of the device. Tied HIGH selects the interleaved
burst order. Pulled LOW selects the linear burst order. MODE should not change
states during operation. When left floating MODE will default HIGH, to an interleaved
burst order.
TDO
JTAG serial output
synchronous
Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK.
Document Number: 001-66679 Rev. *J
Page 8 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Pin Definitions (continued)
Pin Name
I/O Type
Pin Description
TDI
JTAG serial input
synchronous
Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK.
TMS
Test mode select
synchronous
This pin controls the Test Access Port state machine. Sampled on the rising edge
of TCK.
TCK
JTAG-clock
Clock input to the JTAG circuitry.
VDD
Power supply
Power supply inputs to the core of the device.
VDDQ
I/O power supply
Power supply for the I/O circuitry.
VSS
Ground
Ground for the device. Should be connected to ground of the system.
NC
N/A
No connects. This pin is not connected to the die.
NC/72M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/144M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/288M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/576M
N/A
Not connected to the die. Can be tied to any voltage level.
NC/1G
N/A
Not connected to the die. Can be tied to any voltage level.
ZZ
Input-asynchronous
ZZ “sleep” Input. This active HIGH input places the device in a non-time critical
“sleep” condition with data integrity preserved. During normal operation, this pin has
to be LOW or left floating. ZZ pin has an internal pull-down.
Functional Overview
The CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/
CY7C1462KVE25 are synchronous-pipelined burst NoBL
SRAMs designed specifically to eliminate wait states during
write/read transitions. All synchronous inputs pass through input
registers controlled by the rising edge of the clock. The clock
signal is qualified with the clock enable input signal (CEN). If
CEN is HIGH, the clock signal is not recognized and all internal
states are maintained. All synchronous operations are qualified
with CEN. All data outputs pass through output registers
controlled by the rising edge of the clock. Maximum access delay
from the clock rise (tCO) is 2.5 ns (250 MHz device).
Accesses can be initiated by asserting all three chip enables
(CE1, CE2, CE3) active at the rising edge of the clock. If clock
enable (CEN) is active LOW and ADV/LD is asserted LOW, the
address presented to the device will be latched. The access can
either be a read or write operation, depending on the status of
the write enable (WE). BW[x] can be used to conduct byte write
operations.
Write operations are qualified by the write enable (WE). All writes
are simplified with on-chip synchronous self-timed write circuitry.
Three synchronous chip enables (CE1, CE2, CE3) and an
asynchronous output enable (OE) simplify depth expansion. All
operations (reads, writes, and deselects) are pipelined. ADV/LD
should be driven LOW once the device has been deselected in
order to load a new address for the next operation.
Single Read Accesses
A read access is initiated when the following conditions are
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2,
and CE3 are all asserted active, (3) the write enable input signal
Document Number: 001-66679 Rev. *J
WE is deasserted HIGH, and (4) ADV/LD is asserted LOW. The
address presented to the address inputs is latched into the
address register and presented to the memory core and control
logic. The control logic determines that a read access is in
progress and allows the requested data to propagate to the input
of the output register. At the rising edge of the next clock the
requested data is allowed to propagate through the output
register and onto the data bus within 2.5 ns (200-MHz device)
provided OE is active LOW. After the first clock of the read
access the output buffers are controlled by OE and the internal
control logic. OE must be driven LOW in order for the device to
drive out the requested data. During the second clock, a
subsequent operation (read/write/deselect) can be initiated.
Deselecting the device is also pipelined. Therefore, when the
SRAM is deselected at clock rise by one of the chip enable
signals, its output will tristate following the next clock rise.
Burst Read Accesses
The CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/
CY7C1462KVE25 have an on-chip burst counter that allows the
user the ability to supply a single address and conduct up to four
reads without reasserting the address inputs. ADV/LD must be
driven LOW in order to load a new address into the SRAM, as
described in the Single Read Accesses section above. The
sequence of the burst counter is determined by the MODE input
signal. A LOW input on MODE selects a linear burst mode, a
HIGH selects an interleaved burst sequence. Both burst
counters use A0 and A1 in the burst sequence, and will
wrap-around when incremented sufficiently. A HIGH input on
ADV/LD will increment the internal burst counter regardless of
the state of chip enables inputs or WE. WE is latched at the
beginning of a burst cycle. Therefore, the type of access (Read
or Write) is maintained throughout the burst sequence.
Page 9 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Single Write Accesses
Write access are initiated when the following conditions are
satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2,
and CE3 are all asserted active, and (3) the write signal WE is
asserted LOW. The address presented to the address inputs is
loaded into the address register. The write signals are latched
into the control logic block.
On the subsequent clock rise the data lines are automatically
three-stated regardless of the state of the OE input signal. This
allows the external logic to present the data on DQ and DQP
(DQa,b,c,d/DQPa,b,c,d for CY7C1460KV25/CY7C1460KVE25
and DQa,b/DQPa,b for CY7C1462KV25/CY7C1462KVE25). In
addition, the address for the subsequent access
(read/write/deselect) is latched into the address register
(provided the appropriate control signals are asserted).
On the next clock rise the data presented to DQ and DQP
(DQa,b,c,d/DQPa,b,c,d for CY7C1460KV25/CY7C1460KVE25
and DQa,b/DQPa,b for CY7C1462KV25/CY7C1462KVE25) (or a
subset for byte write operations, see Write Cycle Description
table for details) inputs is latched into the device and the write is
complete.
The data written during the write operation is controlled by BW
(BWa,b,c,d for CY7C1460KV25/CY7C1460KVE25 and BWa,b for
CY7C1462KV25/CY7C1462KVE25)
signals.
The
CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/
CY7C1462KVE25 provides byte write capability that is described
in the Write Cycle Description table. Asserting the write enable
input (WE) with the selected byte write select (BW) input will
selectively write to only the desired bytes. Bytes not selected
during a byte write operation will remain unaltered. A
synchronous self-timed write mechanism has been provided to
simplify the write operations. Byte write capability has been
included in order to greatly simplify read/modify/write
sequences, which can be reduced to simple byte write
operations.
Because the CY7C1460KV25/CY7C1462KV25/
CY7C1460KVE25/CY7C1462KVE25 are common I/O devices,
data should not be driven into the device while the outputs are
active. The output enable (OE) can be deasserted HIGH before
presenting data to the DQ and DQP (DQa,b,c,d/DQPa,b,c,d for
CY7C1460KV25/CY7C1460KVE25 and DQa,b/DQPa,b for
CY7C1462KV25/CY7C1462KVE25) inputs. Doing so will
three-state the output drivers. As a safety precaution, DQ and
DQP (DQa,b,c,d/DQPa,b,c,d for CY7C1460KV25/
CY7C1460KVE25 and DQa,b/DQPa,b for CY7C1462KV25/
Document Number: 001-66679 Rev. *J
CY7C1462KVE25) are automatically three-stated during the
data portion of a write cycle, regardless of the state of OE.
Burst Write Accesses
The CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/
CY7C1462KVE25 have an on-chip burst counter that allows the
user the ability to supply a single address and conduct up to four
WRITE operations without reasserting the address inputs.
ADV/LD must be driven LOW in order to load the initial address,
as described in the Single Write Accesses section above. When
ADV/LD is driven HIGH on the subsequent clock rise, the chip
enables (CE1, CE2, and CE3) and WE inputs are ignored and the
burst counter is incremented. The correct BW (BWa,b,c,d for
for
CY7C1460KV25/CY7C1460KVE25
and
BWa,b
CY7C1462KV25/CY7C1462KVE25) inputs must be driven in
each cycle of the burst write in order to write the correct bytes of
data.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places
the SRAM in a power conservation “sleep” mode. Two clock
cycles are required to enter into or exit from this “sleep” mode.
While in this mode, data integrity is guaranteed. Accesses
pending when entering the “sleep” mode are not considered valid
nor is the completion of the operation guaranteed. The device
must be deselected prior to entering the “sleep” mode. CE1, CE2,
and CE3, must remain inactive for the duration of tZZREC after the
ZZ input returns LOW.
On-Chip ECC
CY7C1460KVE25/CY7C1462KVE25 SRAMs include an on-chip
ECC algorithm that detects and corrects all single-bit memory
errors, including Soft Error Upset (SEU) events induced by
cosmic rays, alpha particles etc. The resulting Soft Error Rate
(SER) of these devices is anticipated to be 200 mA
Ambient
Temperature
VDD
VDDQ
0 °C to +70 °C
2.5 V+ 5%
2.5 V – 5% to
VDD
–40 °C to +85 °C
Neutron Soft Error Immunity
Parameter
LSBU
(Device
without
ECC)
Description
Test
Conditions Typ
Logical
Single-Bit
Upsets
25 °C
LSBU
(Device with
ECC)
LMBU (All
Devices)
SEL (All
Devices)
Max*
Unit
–2 V (Pulse width less than tCYC/2).
17. TPower-up: Assumes a linear ramp from 0 V to VDD (min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
Document Number: 001-66679 Rev. *J
Page 21 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Electrical Characteristics (continued)
Over the Operating Range
Parameter [16, 17]
IDD
ISB1
ISB2
ISB3
ISB4
Description
VDD operating supply
Automatic CE power-down
current – TTL inputs
Test Conditions
VDD = Max,
IOUT = 0 mA,
f = fMAX = 1/tCYC
Max VDD,
device deselected,
VIN VIH or VIN VIL,
f = fMAX = 1/tCYC
mA
–
220
× 36
–
240
5-ns cycle,
200 MHz
× 18
–
190
× 36
–
210
6-ns cycle,
167 MHz
× 18
–
170
× 36
–
190
4-ns cycle,
250 MHz
× 18
–
85
× 36
–
90
5-ns cycle,
200 MHz
× 18
–
85
× 36
–
90
6-ns cycle,
167 MHz
× 18
–
85
× 36
–
90
× 18
–
75
All speeds
Automatic CE power-down
current – CMOS inputs
Max VDD,
device deselected,
VIN 0.3 V or
VIN > VDDQ 0.3 V,
f = fMAX = 1/tCYC
4-ns cycle,
250 MHz
× 18
5-ns cycle,
200 MHz
× 18
6-ns cycle,
167 MHz
× 18
All speed
grades
Document Number: 001-66679 Rev. *J
Unit
× 18
Max VDD,
device deselected,
VIN 0.3 V or
VIN > VDDQ 0.3 V,
f=0
Max VDD,
device deselected,
VIN VIH or VIN VIL,
f=0
Max
4-ns cycle,
250 MHz
Automatic CE power-down
current – CMOS inputs
Automatic CE power-down
current – TTL inputs
Min
× 36
mA
mA
mA
mA
mA
mA
80
–
85
–
85
× 36
mA
90
× 36
mA
90
–
85
× 18
–
75
mA
× 36
–
80
mA
× 36
mA
90
Page 22 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Capacitance
Parameter [18]
Description
100-pin TQFP 165-ball FBGA Unit
Max
Max
Test Conditions
CIN
Input capacitance
CCLK
Clock input capacitance
CI/O
Input/output capacitance
TA = 25 °C, f = 1 MHz,
VDD = 2.5 V VDDQ = 2.5 V
5
5
pF
5
5
pF
5
5
pF
Thermal Resistance
Parameter [18]
JA
Description
Test
conditions With Still Air (0 m/s)
follow standard test
With Air Flow (1 m/s)
methods
and
procedures
for With Air Flow (3 m/s)
measuring thermal
–
impedance,
per
EIA/JESD51.
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
JB
Thermal resistance
(junction to board)
100-pin TQFP 165-ball FBGA Unit
Package
Package
Test Conditions
35.36
14.24
°C/W
31.30
12.47
°C/W
28.86
11.40
°C/W
7.52
3.92
°C/W
28.89
7.19
°C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
2.5 V I/O Test Load
2.5 V
OUTPUT
R = 1667
Z0 = 50
VT = 1.25 V
(a)
5 pF
INCLUDING
JIG AND
SCOPE
ALL INPUT PULSES
VDDQ
OUTPUT
RL = 50
GND
R = 1538
(b)
10%
90%
10%
90%
1 ns
2 V/ns
(c)
Note
18. Tested initially and after any design or process change that may affect these parameters.
Document Number: 001-66679 Rev. *J
Page 23 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Switching Characteristics
Over the Operating Range
Parameter [19, 20]
tPower[21]
Description
VCC (typical) to the first access read or write
–250
–200
–167
Unit
Min
Max
Min
Max
Min
Max
1
–
1
–
1
–
ms
4.0
–
5.0
–
6.0
–
ns
–
250
–
200
–
167
MHz
Clock
tCYC
Clock cycle time
FMAX
Maximum operating frequency
tCH
Clock HIGH
1.5
–
2.0
–
2.4
–
ns
tCL
Clock LOW
1.5
–
2.0
–
2.4
–
ns
–
2.5
–
3.2
–
3.4
ns
Output Times
tCO
Data output valid after CLK rise
tEOV
OE LOW to output valid
tDOH
Data output hold after CLK rise
tCHZ
tCLZ
tEOHZ
tEOLZ
Clock to high Z
Clock to low Z
[22, 23, 24]
[22, 23, 24]
OE HIGH to output high Z
OE LOW to output low Z
[22, 23, 24]
[22, 23, 24]
–
2.6
–
3.0
–
3.4
ns
1.0
–
1.5
–
1.5
–
ns
–
2.6
–
3.0
–
3.4
ns
1.0
–
1.3
–
1.5
–
ns
–
2.6
–
3.0
–
3.4
ns
0
–
0
–
0
–
ns
Set-up Times
tAS
Address set-up before CLK rise
1.2
–
1.4
–
1.5
–
ns
tDS
Data input set-up before CLK rise
1.2
–
1.4
–
1.5
–
ns
tCENS
CEN set-up before CLK rise
1.2
–
1.4
–
1.5
–
ns
tWES
WE, BWx set-up before CLK rise
1.2
–
1.4
–
1.5
–
ns
tALS
ADV/LD set-up before CLK rise
1.2
–
1.4
–
1.5
–
ns
tCES
Chip select set-up
1.2
–
1.4
–
1.5
–
ns
tAH
Address hold after CLK rise
0.3
–
0.4
–
0.5
–
ns
tDH
Data input hold after CLK rise
0.3
–
0.4
–
0.5
–
ns
tCENH
CEN hold after CLK rise
0.3
–
0.4
–
0.5
–
ns
tWEH
WE, BWx hold after CLK rise
0.3
–
0.4
–
0.5
–
ns
tALH
ADV/LD hold after CLK rise
0.3
–
0.4
–
0.5
–
ns
tCEH
Chip select hold after CLK rise
0.3
–
0.4
–
0.5
–
ns
Hold Times
Notes
19. Timing reference is 1.25 V when VDDQ = 2.5 V.
20. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
21. This part has a voltage regulator internally; tpower is the time power needs to be supplied above VDD minimum initially, before a read or write operation can be initiated.
22. tCHZ, tCLZ, tEOLZ, and tEOHZ are specified with AC test conditions shown in (b) of Figure 3 on page 23. Transition is measured ± 200 mV from steady-state voltage.
23. At any given voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data
bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve
high Z prior to low Z under the same system conditions.
24. This parameter is sampled and not 100% tested.
Document Number: 001-66679 Rev. *J
Page 24 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Switching Waveforms
Figure 4. Read/Write/Timing [25, 26, 27]
1
2
3
t CYC
4
5
6
A3
A4
7
8
9
10
A5
A6
A7
CLK
tCENS
tCENH
tCH
tCL
CEN
tCES
tCEH
CE
ADV/LD
WE
BWx
A1
ADDRESS
A2
tCO
tAS
tDS
tAH
Data
In-Out (DQ)
tDH
D(A1)
tDOH
tCLZ
D(A2)
tOEV
Q(A3)
D(A2+1)
tCHZ
Q(A4+1)
Q(A4)
D(A5)
Q(A6)
tOEHZ
tDOH
tOELZ
OE
WRITE
D(A1)
WRITE
D(A2)
BURST
WRITE
D(A2+1)
READ
Q(A3)
READ
Q(A4)
DON’T CARE
BURST
READ
Q(A4+1)
WRITE
D(A5)
READ
Q(A6)
WRITE
D(A7)
DESELECT
UNDEFINED
Figure 5. NOP, STALL and DESELECT Cycles [25, 26, 28]
1
2
A1
A2
3
4
5
A3
A4
6
7
8
9
10
CLK
CEN
CE
ADV/LD
WE
BWx
ADDRESS
A5
tCHZ
D(A1)
Data
Q(A2)
D(A4)
Q(A3)
Q(A5)
In-Out (DQ)
WRITE
D(A1)
READ
Q(A2)
STALL
READ
Q(A3)
WRITE
D(A4)
STALL
DON’T CARE
NOP
READ
Q(A5)
DESELECT
CONTINUE
DESELECT
UNDEFINED
Notes
25. For this waveform ZZ is tied low.
26. When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
27. Order of the burst sequence is determined by the status of the MODE (0=Linear, 1=Interleaved). Burst operations are optional.
28. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrated CEN being used to create a pause. A write is not performed during this cycle.
Document Number: 001-66679 Rev. *J
Page 25 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Switching Waveforms (continued)
Figure 6. ZZ Mode Timing [29, 30]
CLK
t
ZZ
I
t
t
ZZ
ZZREC
ZZI
SUPPLY
I
t RZZI
DDZZ
ALL INPUTS
DESELECT or READ Only
(except ZZ)
Outputs (Q)
High-Z
DON’T CARE
Notes
29. Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device.
30. I/Os are in high Z when exiting ZZ sleep mode.
Document Number: 001-66679 Rev. *J
Page 26 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Ordering Information
Table 1 lists the ordering codes. The table contains only the parts that are currently available. If you do not see what you are looking
for, contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the
product summary page at http://www.cypress.com/products.
Table 1. Ordering Information
Speed
(MHz)
250
Ordering Code
Package
Diagram
CY7C1460KV25-250AXC
51-85050 100-pin TQFP (14 × 20 × 1.4 mm) Pb-free
CY7C1462KV25-250BZXC
51-85195 165-ball FBGA (15 × 17 × 1.4 mm) Pb-free
CY7C1460KV25-250BZC
200
51-85050 100-pin TQFP (14 × 20 × 1.4 mm) Pb-free
CY7C1460KV25-200BZXI
51-85195 165-ball FBGA (15 × 17 × 1.4 mm) Pb-free
Commercial
Industrial
165-ball FBGA (15 × 17 × 1.4 mm)
CY7C1460KVE25-200BZXI
165-ball FBGA (15 × 17 × 1.4 mm) Pb-free
CY7C1462KV25-200AXC
51-85050 100-pin TQFP (14 × 20 × 1.4 mm) Pb-free
CY7C1460KV25-167AXC
100-pin TQFP (14 × 20 × 1.4 mm) Pb-free
CY7C1460KVE25-167AXC
100-pin TQFP (14 × 20 × 1.4 mm) Pb-free
CY7C1460KV25-167BZXI
Operating
Range
165-ball FBGA (15 × 17 × 1.4 mm)
CY7C1460KVE25-250AXC
CY7C1460KV25-200BZI
167
Part and Package Type
51-85195 165-ball FBGA (15 × 17 × 1.4 mm) Pb-free
Commercial
Industrial
CY7C1460KV25-167BZC
165-ball FBGA (15 × 17 × 1.4 mm)
Commercial
CY7C1462KV25-167BZI
165-ball FBGA (15 × 17 × 1.4 mm)
Industrial
CY7C1462KVE25-167BZI
165-ball FBGA (15 × 17 × 1.4 mm)
Ordering Code Definitions
CY
7
C
14XX KV E
25 - XXX XX
X X
Temperature range: X = C or I
C = Commercial = 0 °C to +70 °C; I = Industrial = -40 °C to +85 °C
X = Pb-free; X Absent = Leaded
Package Type: XX = A or BZ
A = 100-pin TQFP
BZ = 165-ball FBGA
Speed Grade: XXX = 167 MHz or 200 MHz or 250 MHz
25 = 2.5 V VDD
E = Device with ECC; E Absent = Device without ECC
Process Technology: KV = 65 nm
Part Identifier: 14XX = 1460 or 1462
1460 = PL, 1M × 36 (36-Mbit)
1462 = PL, 2M × 18 (36-Mbit)
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 001-66679 Rev. *J
Page 27 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Package Diagrams
Figure 7. 100-pin TQFP (14 × 20 × 1.4 mm) A100RA Package Outline, 51-85050
ș2
ș1
ș
SYMBOL
DIMENSIONS
MIN. NOM. MAX.
A
A1
1.60
0.05
0.15
NOTE:
1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. BODY LENGTH DIMENSION DOES NOT
INCLUDE MOLD PROTRUSION/END FLASH.
A2
1.35 1.40 1.45
D
15.80 16.00 16.20
MOLD PROTRUSION/END FLASH SHALL
D1
13.90 14.00 14.10
E
21.80 22.00 22.20
NOT EXCEED 0.0098 in (0.25 mm) PER SIDE.
BODY LENGTH DIMENSIONS ARE MAX PLASTIC
E1
19.90 20.00 20.10
R1
0.08
0.20
R2
0.08
0.20
ș
0°
7°
ș1
0°
ș2
11°
13°
12°
0.20
c
b
0.22 0.30 0.38
L
0.45 0.60 0.75
L1
L2
L3
e
BODY SIZE INCLUDING MOLD MISMATCH.
3. JEDEC SPECIFICATION NO. REF: MS-026.
1.00 REF
0.25 BSC
0.20
0.65 TYP
51-85050 *G
Document Number: 001-66679 Rev. *J
Page 28 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Package Diagrams (continued)
Figure 8. 165-ball FBGA (15 × 17 × 1.4 mm (0.5 Ball Diameter)) Package Outline, 51-85195
51-85195 *D
Document Number: 001-66679 Rev. *J
Page 29 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Acronyms
Document Conventions
Table 2. Acronyms Used in this Document
Units of Measure
Acronym
Description
Table 3. Units of Measure
CE
Chip Enable
CEN
Clock Enable
°C
degree Celsius
CMOS
Complementary Metal Oxide Semiconductor
MHz
megahertz
FBGA
Fine-Pitch Ball Grid Array
µA
microampere
I/O
Input/Output
mA
milliampere
JTAG
Joint Test Action Group
mm
millimeter
NoBL
No Bus Latency
ms
millisecond
OE
Output Enable
ns
nanosecond
SRAM
Static Random Access Memory
%
percent
TCK
Test Clock
pF
picofarad
TDI
Test Data-In
V
volt
TDO
Test Data-Out
W
watt
TMS
Test Mode Select
TQFP
Thin Quad Flat Pack
WE
Write Enable
ECC
Error Correcting Code
Document Number: 001-66679 Rev. *J
Symbol
Unit of Measure
Page 30 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Document History Page
Document Title: CY7C1460KV25/CY7C1462KV25/CY7C1460KVE25/CY7C1462KVE25, 36-Mbit (1M × 36/2M × 18) Pipelined
SRAM with NoBL™ Architecture (With ECC)
Document Number: 001-66679
Orig. of
Change
Submission
Date
Revision
ECN
Description of Change
*E
4680535
PRIT
04/10/2015
Changed status from Preliminary to Final.
*F
4757974
DEVM
05/07/2015
Updated Functional Overview:
Updated ZZ Mode Electrical Characteristics:
Changed maximum value of IDDZZ parameter from 89 mA to 75 mA.
*G
5028596
PRIT
11/26/2015
Added Errata.
*H
5210861
DEVM
04/07/2016
Removed Errata.
Updated to new template.
Completing Sunset Review.
*I
5337537
PRIT
07/05/2016
Updated Neutron Soft Error Immunity:
Updated values in “Typ” and “Max” columns corresponding to LSBU (Device
without ECC) parameter.
*J
6062214
CNX
02/07/2018
Updated Package Diagrams:
spec 51-85050 – Changed revision from *E to *G.
Updated to new template.
Document Number: 001-66679 Rev. *J
Page 31 of 32
CY7C1460KV25/CY7C1462KV25
CY7C1460KVE25/CY7C1462KVE25
Sales, Solutions, and Legal Information
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© Cypress Semiconductor Corporation, 2011-2018. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document,
including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress
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are not designed, intended, or authorized for use as critical components in systems designed or intended for the operation of weapons, weapons systems, nuclear installations, life-support devices or
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Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 001-66679 Rev. *J
Revised February 7, 2018
ZBT is a registered trademark of Integrated Device Technology, Inc. No Bus Latency and NoBL are trademarks of Cypress Semiconductor Corporation.
Page 32 of 32
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