CY7C1470V33-200AXCT

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Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.com CY7C1470V33 CY7C1472V33 CY7C1474V33 72-Mbit (2M × 36/4M × 18/1M × 72) Pipelined SRAM with NoBL™ Architecture 72-Mbit (2M × 36/4M × 18/1M × 72) Pipelined SRAM with NoBL™ Architecture Features Functional Description ■ Pin compatible and functionally equivalent to ZBT The CY7C1470V33, CY7C1472V33, and CY7C1474V33 are 3.3 V, 2M × 36/4M × 18/1M × 72 synchronous pipelined burst SRAMs with No Bus Latency™ (NoBL™) logic, respectively. They are designed to support unlimited true back-to-back read/write operations with no wait states. The CY7C1470V33, CY7C1472V33, and CY7C1474V33 are equipped with the advanced (NoBL) logic required to enable consecutive read/write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data in systems that require frequent write/read transitions. The CY7C1470V33, CY7C1472V33, and CY7C1474V33 are pin compatible and functionally equivalent to ZBT devices. ■ Supports 200 MHz Bus operations with zero wait states ❐ Available speed grades are 200 and 167 MHz ■ Internally self timed output buffer control to eliminate the need to use asynchronous OE ■ Fully registered (inputs and outputs) for pipelined operation ■ Byte write capability ■ Single 3.3 V power supply ■ 3.3 V/2.5 V I/O power supply ■ Fast clock-to-output time ❐ 3.0 ns (for 200 MHz device) ■ Clock enable (CEN) pin to suspend operation ■ Synchronous self timed writes All synchronous inputs pass through input registers controlled by the rising edge of the clock. All data outputs pass through output registers controlled by the rising edge of the clock. The clock input is qualified by the clock enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. ■ CY7C1470V33 available in JEDEC-standard Pb-free 100-pin TQFP, and non Pb-free 165-ball FBGA package. CY7C1472V33 available in JEDEC-standard Pb-free 100-pin TQFP. CY7C1474V33 available in non Pb-free 209-ball FBGA package Write operations are controlled by the byte write selects (BWa–BWh for CY7C1474V33, BWa–BWd for CY7C1470V33 and BWa–BWb for CY7C1472V33) and a write enable (WE) input. All writes are conducted with on-chip synchronous self timed write circuitry. ■ IEEE 1149.1 JTAG boundary scan compatible ■ Burst capability – linear or interleaved burst order ■ “ZZ” sleep mode option and stop clock option Three synchronous chip enables (CE1, CE2, CE3) and an asynchronous output enable (OE) provide for easy bank selection and output tristate control. In order to avoid bus contention, the output drivers are synchronously tristated during the data portion of a write sequence. For a complete list of related documentation, click here. Selection Guide 200 MHz 167 MHz Unit Maximum access time Description 3.0 3.4 ns Maximum operating current 500 450 mA Maximum CMOS standby current 120 120 mA Errata: For information on silicon errata, see Errata on page 35. Details include trigger conditions, devices affected, and proposed workaround. Cypress Semiconductor Corporation Document Number: 38-05289 Rev. *Y • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised March 28, 2019 CY7C1470V33 CY7C1472V33 CY7C1474V33 Logic Block Diagram – CY7C1470V33 A0, A1, A ADDRESS REGISTER 0 A1 A1' D1 Q1 A0 A0' BURST D0 Q0 LOGIC MODE ADV/LD C C CLK CEN WRITE ADDRESS REGISTER 1 WRITE ADDRESS REGISTER 2 ADV/LD WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC BW a BW b BW c BW d WRITE DRIVERS O U T P U T S E N S E MEMORY ARRAY R E G I S T E R S A M P S WE S T E E R I N G E INPUT REGISTER 1 OE CE1 CE2 CE3 INPUT REGISTER 0 E O U T P U T D A T A B U F F E R S DQ s DQ Pa DQ Pb DQ Pc DQ Pd E E READ LOGIC SLEEP CONTROL ZZ Logic Block Diagram – CY7C1472V33 A0, A1, A ADDRESS REGISTER 0 A1 A1' D1 Q1 A0 A0' BURST D0 Q0 LOGIC MODE CLK CEN ADV/LD C C WRITE ADDRESS REGISTER 1 WRITE ADDRESS REGISTER 2 S E N S E ADV/LD BW a WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC WRITE DRIVERS MEMORY ARRAY A M P S BW b WE O U T P U T R E G I S T E R S O U T P U T D A T A B U F F E R S S T E E R I N G E INPUT REGISTER 1 OE CE1 CE2 CE3 ZZ Document Number: 38-05289 Rev. *Y E DQ s DQ Pa DQ Pb E INPUT REGISTER 0 E READ LOGIC Sleep Control Page 2 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Logic Block Diagram – CY7C1474V33 A0, A1, A ADDRESS REGISTER 0 A1 A1' D1 Q1 A0 A0' BURST D0 Q0 LOGIC MODE CLK CEN ADV/LD C C WRITE ADDRESS REGISTER 1 WRITE ADDRESS REGISTER 2 S E N S E ADV/LD BW a BW b BW c BW d BW e BW f BW g BW h WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC WRITE DRIVERS MEMORY ARRAY A M P S O U T P U T R E G I S T E R S O U T P U T D A T A B U F F E R S S T E E R I N G E E DQ s DQ Pa DQ Pb DQ Pc DQ Pd DQ Pe DQ Pf DQ Pg DQ Ph WE INPUT REGISTER 1 OE CE1 CE2 CE3 ZZ Document Number: 38-05289 Rev. *Y E INPUT REGISTER 0 E READ LOGIC Sleep Control Page 3 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Contents Pin Configurations ........................................................... 5 Pin Definitions .................................................................. 8 Functional Overview ...................................................... 10 Single Read Accesses .............................................. 10 Burst Read Accesses ................................................ 10 Single Write Accesses ............................................... 10 Burst Write Accesses ................................................ 11 Sleep Mode ............................................................... 11 Interleaved Burst Address Table ............................... 11 Linear Burst Address Table ....................................... 11 ZZ Mode Electrical Characteristics ............................ 11 Truth Table ...................................................................... 12 Partial Write Cycle Description ..................................... 13 Partial Write Cycle Description ..................................... 13 Partial Write Cycle Description ..................................... 14 IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 15 Disabling the JTAG Feature ...................................... 15 Test Access Port (TAP) ............................................. 15 PERFORMING A TAP RESET .................................. 15 TAP REGISTERS ...................................................... 15 TAP Instruction Set ................................................... 15 TAP Controller State Diagram ....................................... 17 TAP Controller Block Diagram ...................................... 18 TAP Timing Diagram ...................................................... 18 TAP AC Switching Characteristics ............................... 19 3.3 V TAP AC Test Conditions ....................................... 20 3.3 V TAP AC Output Load Equivalent ......................... 20 2.5 V TAP AC Test Conditions ....................................... 20 2.5 V TAP AC Output Load Equivalent ......................... 20 TAP DC Electrical Characteristics and Operating Conditions ............................................. 20 Identification Register Definitions ................................ 21 Document Number: 38-05289 Rev. *Y Scan Register Sizes ....................................................... 21 Identification Codes ....................................................... 21 Boundary Scan Exit Order ............................................. 22 Boundary Scan Exit Order ............................................. 23 Maximum Ratings ........................................................... 24 Operating Range ............................................................. 24 Neutron Soft Error Immunity ......................................... 24 Electrical Characteristics ............................................... 24 Capacitance .................................................................... 25 Thermal Resistance ........................................................ 25 AC Test Loads and Waveforms ..................................... 26 Switching Characteristics .............................................. 27 Switching Waveforms .................................................... 28 Ordering Information ...................................................... 30 Ordering Code Definitions ......................................... 30 Package Diagrams .......................................................... 31 Acronyms ........................................................................ 34 Document Conventions ................................................. 34 Units of Measure ....................................................... 34 Errata ............................................................................... 35 Part Numbers Affected .............................................. 35 Product Status ........................................................... 35 Ram9 NoBL ZZ Pin Issues Errata Summary ............. 35 Document History Page ................................................. 36 Sales, Solutions, and Legal Information ...................... 40 Worldwide Sales and Design Support ....................... 40 Products .................................................................... 40 PSoC® Solutions ...................................................... 40 Cypress Developer Community ................................. 40 Technical Support ..................................................... 40 Page 4 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Pin Configurations CY7C1470V33 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 CY7C1472V33 (4M × 18) 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 A NC NC VDDQ VSS NC DQPa DQa DQa VSS VDDQ DQa DQa VSS NC VDD ZZ DQa DQa VDDQ VSS DQa DQa NC NC VSS VDDQ NC NC NC A A A A A A A A VSS VDD A NC(288) NC(144) A A A A A A A A A VSS VDD 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 NC DQPb NC DQb NC DQb VDDQ VDDQ VSS VSS NC DQb DQb NC DQb DQb DQb DQb VSS VSS VDDQ VDDQ DQb DQb DQb DQb NC VSS VDD NC NC VDD VSS ZZ DQb DQa DQa DQb VDDQ VDDQ VSS VSS DQa DQb DQa DQb DQa DQPb DQa NC VSS VSS VDDQ VDDQ NC DQa DQa NC DQPa NC MODE A A A A A1 A0 (2M × 36) NC(288) NC(144) DQc DQc NC VDD NC VSS DQd DQd VDDQ VSS DQd DQd DQd DQd VSS VDDQ DQd DQd DQPd 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 VSS DQc DQc DQc DQc VSS VDDQ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE A A A A A1 A0 DQPc DQc DQc VDDQ A A A A CE1 CE2 NC NC BWb BWa CE3 VDD VSS CLK WE CEN OE ADV/LD A A A A 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 A A CE1 CE2 BWd BWc BWb BWa CE3 VDD VSS CLK WE CEN OE ADV/LD A A Figure 1. 100-pin TQFP (14 × 20 × 1.4 mm) pinout [1] Note 1. Errata: The ZZ pin (Pin 64) needs to be externally connected to ground. For more information, see Errata on page 35. Document Number: 38-05289 Rev. *Y Page 5 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Pin Configurations (continued) Figure 2. 165-ball FBGA (15 × 17 × 1.4 mm) pinout [2] CY7C1470V33 (2M × 36) 1 2 A B C D E F G H J K L M N P NC/576M A 3 NC/1G A DQPc DQc NC DQc VDDQ VDDQ VSS VDD DQc DQc VDDQ R CE1 CE2 4 5 6 BWc BWb CE3 BWd BWa VSS CLK VSS VDD 7 8 9 10 11 CEN WE ADV/LD A A NC OE A A NC VSS VSS VSS VSS VSS VDD VDDQ VDDQ NC DQb DQPb DQb VSS VSS VSS VDD VDDQ DQb DQb DQc DQc VDDQ VDD VSS VSS VSS VDD VDDQ DQb DQb DQc NC DQd DQc NC DQd VDDQ NC VDDQ VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDDQ NC VDDQ DQb NC DQa DQb ZZ DQa DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa DQd DQd VDDQ VDD VSS VSS VSS VDD VDDQ DQa DQa DQd DQPd DQd NC VDDQ VDDQ VDD VSS VSS NC VSS NC VSS NC VDD VSS VDDQ VDDQ DQa NC DQa DQPa NC/144M A A A TDI A1 TDO A A A MODE A A A TMS A0 TCK A A A NC/288M A Note 2. Errata: The ZZ ball (H11) needs to be externally connected to ground. For more information, see Errata on page 35. Document Number: 38-05289 Rev. *Y Page 6 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Pin Configurations (continued) Figure 3. 209-ball FBGA (14 × 22 × 1.76 mm) pinout [3] CY7C1474V33 (1M × 72) 1 2 3 4 5 6 7 8 9 10 11 A DQg DQg A CE2 A ADV/LD A CE3 A DQb DQb B DQg DQg BWSc BWSg NC WE A BWSb BWSf DQb DQb C DQg DQg BWSh BWSd NC/576M CE1 NC BWSe BWSa DQb DQb D DQg DQg VSS NC NC/1G OE NC NC VSS DQb DQb E DQPg DQPc VDDQ VDDQ VDD VDD VDD VDDQ VDDQ DQPf DQPb F DQc DQc VSS VSS VSS NC VSS VSS VSS DQf DQf G DQc DQc VDDQ VDDQ VDD NC VDD VDDQ VDDQ DQf DQf H DQc DQc VSS VSS VSS NC VSS VSS VSS DQf DQf VDDQ DQf DQf J DQc DQc VDDQ VDDQ VDD NC VDD VDDQ K NC NC CLK NC VSS CEN VSS NC NC NC NC L DQh DQh VDDQ VDDQ VDD NC VDD VDDQ VDDQ DQa DQa M DQh DQh VSS VSS VSS NC VSS VSS VSS DQa DQa N DQh DQh VDDQ VDDQ VDD NC VDD VDDQ VDDQ DQa DQa P DQh DQh VSS VSS VSS ZZ VSS VSS VSS DQa DQa VDDQ VDD VDD VDD VDDQ VDDQ DQPa DQPe R DQPd DQPh VDDQ T DQd DQd VSS NC NC MODE NC NC VSS DQe DQe A A A A NC/288M DQe DQe U DQd DQd NC/144M A V DQd DQd A A A A1 A A A DQe DQe W DQd DQd TMS TDI A A0 A TDO TCK DQe DQe Note 3. Errata: The ZZ ball (P6) needs to be externally connected to ground. For more information, see Errata on page 35. Document Number: 38-05289 Rev. *Y Page 7 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Pin Definitions Pin Name A0, A1, A I/O Type Pin Description InputAddress inputs used to select one of the address locations. Sampled at the rising edge of the CLK. synchronous BWa, BWb, InputByte write select inputs, active LOW. Qualified with WE to conduct writes to the SRAM. Sampled on BWc, BWd, synchronous the rising edge of CLK. BWa controls DQa and DQPa, BWb controls DQb and DQPb, BWc controls DQc BWe, BWf, and DQPc, BWd controls DQd and DQPd, BWe controls DQe and DQPe, BWf controls DQf and DQPf, BWg, BWh BWg controls DQg and DQPg, BWh controls DQh and DQPh. WE InputWrite enable input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This signal synchronous must be asserted LOW to initiate a write sequence. ADV/LD InputAdvance/load input used to advance the on-chip address counter or load a new address. When synchronous HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address can be loaded into the device for an access. After being deselected, ADV/LD should be driven LOW in order to load a new address. CLK Inputclock Clock input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK is only recognized if CEN is active LOW. CE1 InputChip enable 1 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2 synchronous and CE3 to select/deselect the device. CE2 InputChip enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 synchronous and CE3 to select/deselect the device. CE3 InputChip enable 3 input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 synchronous and CE2 to select/deselect the device. OE InputOutput enable, active LOW. Combined with the synchronous logic block inside the device to control asynchronous the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are tristated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state and when the device has been deselected. CEN InputClock enable input, active LOW. When asserted LOW the clock signal is recognized by the SRAM. synchronous When deasserted HIGH the clock signal is masked. Since deasserting CEN does not deselect the device, CEN can be used to extend the previous cycle when required. DQS I/OBidirectional data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the synchronous rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by A[17:0] during the previous clock rise of the read cycle. The direction of the pins is controlled by OE and the internal control logic. When OE is asserted LOW, the pins can behave as outputs. When HIGH, DQa–DQd are placed in a tristate condition. The outputs are automatically tristated during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. DQPX I/OBidirectional data parity I/O lines. Functionally, these signals are identical to DQX. During write synchronous sequences, DQPa is controlled by BWa, DQPb is controlled by BWb, DQPc is controlled by BWc, and DQPd is controlled by BWd, DQPe is controlled by BWe, DQPf is controlled by BWf, DQPg is controlled by BWg, DQPh is controlled by BWh. MODE Input strap pin Mode input. Selects the burst order of the device. Tied HIGH selects the interleaved burst order. Pulled LOW selects the linear burst order. MODE should not change states during operation. When left floating MODE will default HIGH, to an interleaved burst order. TDO JTAG serial Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. output synchronous TDI JTAG serial Serial data-in to the JTAG circuit. Sampled on the rising edge of TCK. input Synchronous Document Number: 38-05289 Rev. *Y Page 8 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Pin Definitions (continued) Pin Name TMS TCK VDD VDDQ I/O Type Pin Description Test mode This pin controls the test access port state machine. Sampled on the rising edge of TCK. select synchronous JTAG clock Clock input to the JTAG circuitry. Power supply Power supply inputs to the core of the device. I/O power supply Power supply for the I/O circuitry. VSS Ground NC – No connects. This pin is not connected to the die. NC (144M, 288M, 576M, 1G) – These pins are not connected. They will be used for expansion to the 144M, 288M, 576M, and 1G densities. ZZ[4] Ground for the device. Should be connected to ground of the system. InputZZ “Sleep” input. This active HIGH input places the device in a non-time critical “sleep” condition with asynchronous data integrity preserved. During normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down. Note 4. Errata: The ZZ pin needs to be externally connected to ground. For more information, see Errata on page 35. Document Number: 38-05289 Rev. *Y Page 9 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Functional Overview The CY7C1470V33, CY7C1472V33, and CY7C1474V33 are synchronous-pipelined burst NoBL SRAMs designed specifically to eliminate wait states during write/read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock signal is qualified with the clock enable input signal (CEN). If CEN is HIGH, the clock signal is not recognized and all internal states are maintained. All synchronous operations are qualified with CEN. All data outputs pass through output registers controlled by the rising edge of the clock. Maximum access delay from the clock rise (tCO) is 3.0 ns (200 MHz device). Accesses can be initiated by asserting all three chip enables (CE1, CE2, CE3) active at the rising edge of the clock. If clock enable (CEN) is active LOW and ADV/LD is asserted LOW, the address presented to the device will be latched. The access can either be a read or write operation, depending on the status of the write enable (WE). BW[x] can be used to conduct byte write operations. Write operations are qualified by the write enable (WE). All writes are simplified with on-chip synchronous self timed write circuitry. Three synchronous chip enables (CE1, CE2, CE3) and an asynchronous output enable (OE) simplify depth expansion. All operations (reads, writes, and deselects) are pipelined. ADV/LD should be driven LOW after the device has been deselected in order to load a new address for the next operation. Single Read Accesses A read access is initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are all asserted active, (3) the write enable input signal WE is deasserted HIGH, and (4) ADV/LD is asserted LOW. The address presented to the address inputs is latched into the address register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the rising edge of the next clock the requested data is allowed to propagate through the output register and onto the data bus within 3.0 ns (200 MHz device) provided OE is active LOW. After the first clock of the read access the output buffers are controlled by OE and the internal control logic. OE must be driven LOW in order for the device to drive out the requested data. During the second clock, a subsequent operation (read/write/deselect) can be initiated. Deselecting the device is also pipelined. Therefore, when the SRAM is deselected at clock rise by one of the chip enable signals, its output will tristate following the next clock rise. Burst Read Accesses The CY7C1470V33, CY7C1472V33, and CY7C1474V33 have an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four reads without reasserting the address inputs. ADV/LD must be driven LOW in order to load a new address into the SRAM, as described in Single Read Accesses. The sequence of the burst counter is Document Number: 38-05289 Rev. *Y determined by the MODE input signal. A LOW input on MODE selects a linear burst mode, a HIGH selects an interleaved burst sequence. Both burst counters use A0 and A1 in the burst sequence, and will wrap-around when incremented sufficiently. A HIGH input on ADV/LD will increment the internal burst counter regardless of the state of chip enables inputs or WE. WE is latched at the beginning of a burst cycle. Therefore, the type of access (read or write) is maintained throughout the burst sequence. Single Write Accesses Write accesses are initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are all asserted active, and (3) the write signal WE is asserted LOW. The address presented to the address inputs is loaded into the address register. The write signals are latched into the control logic block. On the subsequent clock rise the data lines are automatically tristated regardless of the state of the OE input signal. This allows the external logic to present the data on DQ and DQP (DQa,b,c,d,e,f,g,h/DQPa,b,c,d,e,f,g,h for CY7C1474V33, DQa,b,c,d/DQPa,b,c,d for CY7C1470V33 and DQa,b/DQPa,b for CY7C1472V33). In addition, the address for the subsequent access (read/write/deselect) is latched into the address register (provided the appropriate control signals are asserted). On the next clock rise the data presented to DQ and DQP (DQa,b,c,d,e,f,g,h/DQPa,b,c,d,e,f,g,h for CY7C1474V33, DQa,b,c,d/DQPa,b,c,d for CY7C1470V33 and DQa,b/DQPa,b for CY7C1472V33) (or a subset for byte write operations, see Write Cycle Description table for details) inputs is latched into the device and the write is complete. The data written during the write operation is controlled by BW (BWa,b,c,d,e,f,g,h for CY7C1474V33, BWa,b,c,d for CY7C1470V33 and BWa,b for CY7C1472V33) signals. The CY7C1470V33, CY7C1472V33, and CY7C1474V33 provides byte write capability that is described in the Write Cycle Description table. Asserting the write enable input (WE) with the selected byte write select (BW) input will selectively write to only the desired bytes. Bytes not selected during a byte write operation will remain unaltered. A synchronous self timed Write mechanism has been provided to simplify the write operations. Byte write capability has been included in order to greatly simplify read/modify/write sequences, which can be reduced to simple byte write operations. Because the CY7C1470V33, CY7C1472V33, and CY7C1474V33 are common I/O devices, data should not be driven into the device while the outputs are active. The output enable (OE) can be deasserted HIGH before presenting data to the DQ and DQP (DQa,b,c,d,e,f,g,h/DQPa,b,c,d,e,f,g,h for CY7C1474V33, DQa,b,c,d/DQPa,b,c,d for CY7C1470V33 and DQa,b/DQPa,b for CY7C1472V33) inputs. Doing so will tristate the output drivers. As a safety precaution, DQ and DQP for CY7C1474V33, (DQa,b,c,d,e,f,g,h/DQPa,b,c,d,e,f,g,h DQa,b,c,d/DQPa,b,c,d for CY7C1470V33 and DQa,b/DQPa,b for CY7C1472V33) are automatically tristated during the data portion of a write cycle, regardless of the state of OE. Page 10 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Burst Write Accesses Interleaved Burst Address Table The CY7C1470V33, CY7C1472V33, and CY7C1474V33 has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four write operations without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial address, as described in Single Write Accesses on page 10. When ADV/LD is driven HIGH on the subsequent clock rise, the chip enables (CE1, CE2, and CE3) and WE inputs are ignored and the burst counter is incremented. The correct BW (BWa,b,c,d,e,f,g,h for CY7C1474V33, BWa,b,c,d for CY7C1470V33 and BWa,b for CY7C1472V33) inputs must be driven in each cycle of the burst write in order to write the correct bytes of data. (MODE = Floating or VDD) First Address A1:A0 Second Address A1:A0 Third Address A1:A0 Fourth Address A1:A0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 Fourth Address A1:A0 Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CE1, CE2, and CE3, must remain inactive for the duration of tZZREC after the ZZ input returns LOW. Linear Burst Address Table (MODE = GND) First Address A1:A0 Second Address A1:A0 Third Address A1:A0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 ZZ Mode Electrical Characteristics Parameter Description Test Conditions Min Max Unit IDDZZ Sleep mode standby current ZZ  VDD 0.2 V – 120 mA tZZS Device operation to ZZ ZZ VDD  0.2 V – 2tCYC ns tZZREC ZZ recovery time ZZ  0.2 V 2tCYC – ns tZZI ZZ active to sleep current This parameter is sampled – 2tCYC ns tRZZI ZZ Inactive to exit sleep current This parameter is sampled 0 – ns Document Number: 38-05289 Rev. *Y Page 11 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Truth Table The Truth Table for parts CY7C1470V33/CY7C1472V33/CY7C1474V33 is as follows. [5, 6, 7, 8, 9, 10, 11] Operation Address Used CE ZZ ADV/LD WE BWx OE CEN CLK DQ Deselect cycle None H L L X X X L L–H Tri-state Continue deselect cycle None X L H X X X L L–H Tri-state Read cycle (begin burst) External L L L H X L L L–H Data out (Q) Next X L H X X L L L–H Data out (Q) External L L L H X H L L–H Tri-state Next X L H X X H L L–H Tri-state External L L L L L X L L–H Data in (D) Write cycle (continue burst) Next X L H X L X L L–H Data in (D) NOP/write abort (begin burst) None L L L L H X L L–H Tri-state Write abort (continue burst) Next X L H X H X L L–H Tri-state Current X L X X X X H L–H – None X H X X X X X X Tri-state Read cycle (continue burst) NOP/dummy read (begin burst) Dummy read (continue burst) Write cycle (begin burst) Ignore clock edge (stall) Sleep mode Notes 5. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for all chip enables active. BWx = 0 signifies at least one byte write select is active, BWx = valid signifies that the desired byte write selects are asserted, see Write Cycle Description table for details. 6. Write is defined by WE and BW[a:d]. See Write Cycle Description table for details. 7. When a write cycle is detected, all I/Os are tristated, even during byte writes. 8. The DQ and DQP pins are controlled by the current cycle and the OE signal. 9. CEN = H inserts wait states. 10. Device will power-up deselected and the I/Os in a tristate condition, regardless of OE. 11. OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle DQs and DQP[a:d] = tristate when OE is inactive or when the device is deselected, and DQs= data when OE is active. Document Number: 38-05289 Rev. *Y Page 12 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Partial Write Cycle Description The partial write cycle description for part CY7C1470V33 is as follows. [12, 13, 14, 15] Function (CY7C1470V33) WE BWd BWc BWb BWa Read H X X X X Write – no bytes written L H H H H Write byte a – (DQa and DQPa) L H H H L Write byte b – (DQb and DQPb) L H H L H Write bytes b, a L H H L L Write byte c – (DQc and DQPc) L H L H H Write bytes c, a L H L H L Write bytes c, b L H L L H Write bytes c, b, a L H L L L Write byte d – (DQd and DQPd) L L H H H Write bytes d, a L L H H L Write bytes d, b L L H L H Write bytes d, b, a L L H L L Write bytes d, c L L L H H Write bytes d, c, a L L L H L Write bytes d, c, b L L L L H Write all bytes L L L L L Partial Write Cycle Description The partial write cycle description for part CY7C1472V33 is as follows. [12, 13, 14, 15] Function (CY7C1472V33) WE BWb BWa Read H x x Write – no bytes written L H H Write byte a – (DQa and DQPa) L H L Write byte b – (DQb and DQPb) L L H Write both bytes L L L Notes 12. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for all chip enables active. BWx = 0 signifies at least one byte write select is active, BWx = valid signifies that the desired byte write selects are asserted, see Write Cycle Description table for details. 13. Write is defined by WE and BW[a:d]. See Write Cycle Description table for details. 14. When a write cycle is detected, all I/Os are tristated, even during byte writes. 15. Table only lists a partial listing of the Byte Write combinations. Any combination of BW[a:d] is valid. Appropriate write will be done based on which Byte Write is active. Document Number: 38-05289 Rev. *Y Page 13 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Partial Write Cycle Description The partial write cycle description for part CY7C1474V33 is as follows. [16, 17, 18, 19] Function (CY7C1474V33) WE BWx Read H x Write – no bytes written L H Write byte X(DQx and DQPx) L L Write all bytes L All BW = L Notes 16. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for all chip enables active. BWx = 0 signifies at least one byte write select is active, BWx = valid signifies that the desired byte write selects are asserted, see Write Cycle Description table for details. 17. Write is defined by WE and BW[a:d]. See Write Cycle Description table for details. 18. When a write cycle is detected, all I/Os are tristated, even during byte writes. 19. Table only lists a partial listing of the Byte Write combinations. Any combination of BW[a:d] is valid. Appropriate write will be done based on which Byte Write is active. Document Number: 38-05289 Rev. *Y Page 14 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1470V33, and CY7C1474V33 incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM. Note that the TAP controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant TAPs. The TAP operates using JEDEC-standard 3.3 V or 2.5 V I/O logic levels. The CY7C1470V33, and CY7C1474V33 contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull up resistor. TDO should be left unconnected. Upon power-up, the device will come up in a reset state which will not interfere with the operation of the device. Test Access Port (TAP) Test Clock (TCK) The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. It is allowable to leave this ball unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI ball is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see the TAP Controller State Diagram on page 17. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register. At power-up, the TAP is reset internally to ensure that TDO comes up in a high Z state. TAP Registers Registers are connected between the TDI and TDO balls and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. Instruction Register Three bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the TAP Controller Block Diagram on page 18. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test data path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all the input and bidirectional balls on the SRAM. The boundary scan register is loaded with the contents of the RAM I/O ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the I/O ring. The Boundary Scan Exit Order on page 22 and Boundary Scan Exit Order on page 23 show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI and the LSB is connected to TDO. Identification (ID) Register The TDO output ball is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine (see Identification Codes on page 21). The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in the Identification Register Definitions table. Performing a TAP Reset TAP Instruction Set A RESET is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. Overview Test Data-Out (TDO) Document Number: 38-05289 Rev. *Y Eight different instructions are possible with the three bit instruction register. All combinations are listed in Identification Page 15 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Codes on page 21. Three of these instructions are listed as RESERVED and should not be used. The other five instructions are described in detail below. The TAP controller used in this SRAM is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. The TAP controller cannot be used to load address data or control signals into the SRAM and cannot preload the I/O buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE/PRELOAD; rather, it performs a capture of the I/O ring when these instructions are executed. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction after it is shifted in, the TAP controller needs to be moved into the Update-IR state. EXTEST EXTEST is a mandatory 1149.1 instruction which is to be executed whenever the instruction register is loaded with all 0s. EXTEST is not implemented in this SRAM TAP controller, and therefore this device is not compliant to 1149.1. The TAP controller does recognize an all-0 instruction. When an EXTEST instruction is loaded into the instruction register, the SRAM responds as if a SAMPLE/PRELOAD instruction has been loaded. There is one difference between the two instructions. Unlike the SAMPLE/PRELOAD instruction, EXTEST places the SRAM outputs in a high Z state. IDCODE The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power up or whenever the TAP controller is given a test logic reset state. SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO balls when the TAP controller is in a Shift-DR state. It also places all SRAM outputs into a high Z state. Document Number: 38-05289 Rev. *Y SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The PRELOAD portion of this instruction is not implemented, so the device TAP controller is not fully 1149.1 compliant. When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. To guarantee that the boundary scan register will capture the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture setup plus hold time (tCS plus tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CLK captured in the boundary scan register. After the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO balls. Note that since the PRELOAD part of the command is not implemented, putting the TAP to the Update-DR state while performing a SAMPLE/PRELOAD instruction will have the same effect as the Pause-DR command. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO balls. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. Page 16 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 TAP Controller State Diagram 1 TEST-LOGIC RESET 0 0 RUN-TEST/ IDLE 1 SELECT DR-SCA N 1 SELECT IR-SCAN 0 1 0 1 CAPTURE-DR CAPTURE-IR 0 0 SHIFT-DR 0 SHIFT-IR 1 1 EXIT1-IR 0 1 0 PAUSE-DR 0 PAUSE-IR 1 0 1 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-DR 1 0 1 EXIT1-DR 0 1 0 UPDATE-IR 1 0 The 0/1 next to each state represents the value of TMS at the rising edge of TCK. Document Number: 38-05289 Rev. *Y Page 17 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 TAP Controller Block Diagram 0 Bypass Register 2 1 0 TDI Selection Circuitry Instruction Register Selection Circuitry TDO 5 6 31 30 29 . . . 2 1 0 Identification Register x . . . . . 2 1 0 Boundary Scan Register TCK TAP CONTROLLER TM S TAP Timing Diagram 1 2 Test Clock (TCK ) 3 t TH t TM SS t TM SH t TDIS t TDIH t TL 4 t CY C Test M ode Select (TM S) Test Data-In (TDI) t TDOV t TDOX Test Data-Out (TDO) DON’T CA RE Document Number: 38-05289 Rev. *Y UNDEFINED Page 18 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 TAP AC Switching Characteristics Over the Operating Range Parameter [20, 21] Description Min Max Unit Clock tTCYC TCK clock cycle time 50 – ns tTF TCK clock frequency – 20 MHz tTH TCK clock HIGH time 20 – ns tTL TCK clock LOW time 20 – ns tTDOV TCK clock LOW to TDO valid – 10 ns tTDOX TCK clock LOW to TDO invalid 0 – ns tTMSS TMS setup to TCK clock rise 5 – ns tTDIS TDI setup to TCK clock rise 5 – ns tCS Capture setup to TCK rise 5 – ns tTMSH TMS hold after TCK clock rise 5 – ns tTDIH TDI hold after clock rise 5 – ns tCH Capture hold after clock rise 5 – ns Output Times Setup Times Hold Times Notes 20. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 21. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document Number: 38-05289 Rev. *Y Page 19 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 3.3 V TAP AC Test Conditions 2.5 V TAP AC Test Conditions Input pulse levels ...............................................VSS to 3.3 V Input pulse levels ............................................... VSS to 2.5 V Input rise and fall times ...................................................1 ns Input rise and fall time ....................................................1 ns Input timing reference levels ......................................... 1.5 V Input timing reference levels ....................................... 1.25 V Output reference levels ................................................ 1.5 V Output reference levels .............................................. 1.25 V Test load termination supply voltage ............................ 1.5 V Test load termination supply voltage .......................... 1.25 V 3.3 V TAP AC Output Load Equivalent 2.5 V TAP AC Output Load Equivalent 1.5V 1.25V 50Ω 50Ω TDO TDO Z O= 50Ω 20pF Z O= 50Ω 20pF TAP DC Electrical Characteristics and Operating Conditions (0 °C < TA < +70 °C; VDD = 3.135 V to 3.6 V unless otherwise noted) Parameter [22] Description Test Conditions Min Max Unit VOH1 Output HIGH voltage IOH = –4.0 mA,VDDQ = 3.3 V 2.4 – V IOH = –1.0 mA,VDDQ = 2.5 V 2.0 – V VOH2 Output HIGH voltage IOH = –100 µA VDDQ = 3.3 V 2.9 – V VDDQ = 2.5 V 2.1 – V VDDQ = 3.3 V – 0.4 V VOL1 Output LOW voltage IOL = 8.0 mA IOL = 1.0 mA VDDQ = 2.5 V – 0.4 V VOL2 Output LOW voltage IOL = 100 µA VDDQ = 3.3 V – 0.2 V VDDQ = 2.5 V – 0.2 V VDDQ = 3.3 V 2.0 VDD + 0.3 V VDDQ = 2.5 V 1.7 VDD + 0.3 V VDDQ = 3.3 V –0.3 0.8 V VDDQ = 2.5 V –0.3 0.7 V –5 5 µA VIH Input HIGH voltage VIL Input LOW voltage IX Input load current GND < VIN < VDDQ Note 22. All voltages referenced to VSS (GND). Document Number: 38-05289 Rev. *Y Page 20 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Identification Register Definitions CY7C1470V33 (2M × 36) Instruction Field CY7C1474V33 (1M × 72) Description Revision number (31:29) 000 000 Device depth (28:24) [23] 01011 01011 Architecture/memory type (23:18) 001000 001000 Defines memory type and architecture Bus width/density (17:12) 100100 110100 Defines width and density 00000110100 00000110100 1 1 Cypress JEDEC ID code (11:1) ID register presence indicator (0) Describes the version number Reserved for internal use Allows unique identification of SRAM vendor Indicates the presence of an ID register Scan Register Sizes Register Name Bit Size (× 36) Bit Size (× 72) Instruction 3 3 Bypass 1 1 ID 32 32 Boundary scan order – 165-ball FBGA 71 – Boundary scan order – 209-ball FBGA – 110 Identification Codes Instruction Code Description EXTEST 000 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM outputs to high Z state. This instruction is not 1149.1 compliant. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operations. SAMPLE Z 010 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a high Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does not affect SRAM operation. This instruction does not implement 1149.1 preload function and is therefore not 1149.1 compliant. RESERVED 101 Do Not Use: This instruction is reserved for future use. Note 23. Bit #24 is “1” in the ID Register Definitions for both 2.5 V and 3.3 V versions of this device. Document Number: 38-05289 Rev. *Y Page 21 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Boundary Scan Exit Order (2M × 36) Bit # 165-ball ID Bit # 165-ball ID Bit # 165-ball ID Bit # 165-ball ID 1 C1 21 R3 2 D1 22 P2 41 J11 61 B7 42 K10 62 B6 3 E1 23 R4 43 J10 63 A6 4 D2 24 P6 44 H11 64 B5 5 E2 25 R6 45 G11 65 A5 6 F1 26 R8 46 F11 66 A4 7 G1 27 P3 47 E11 67 B4 8 F2 28 P4 48 D10 68 B3 9 G2 29 P8 49 D11 69 A3 10 J1 30 P9 50 C11 70 A2 11 K1 31 P10 51 G10 71 B2 12 L1 32 R9 52 F10 13 J2 33 R10 53 E10 14 M1 34 R11 54 A9 15 N1 35 N11 55 B9 16 K2 36 M11 56 A10 17 L2 37 L11 57 B10 18 M2 38 M10 58 A8 19 R1 39 L10 59 B8 20 R2 40 K11 60 A7 Document Number: 38-05289 Rev. *Y Page 22 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Boundary Scan Exit Order (1M × 72) Bit # 209-ball ID Bit # 209-ball ID Bit # 209-ball ID Bit # 209-ball ID 1 A1 29 T1 57 U10 85 B11 2 A2 30 T2 58 T11 86 B10 3 B1 31 U1 59 T10 87 A11 4 B2 32 U2 60 R11 88 A10 5 C1 33 V1 61 R10 89 A7 6 C2 34 V2 62 P11 90 A5 7 D1 35 W1 63 P10 91 A9 8 D2 36 W2 64 N11 92 U8 9 E1 37 T6 65 N10 93 A6 10 E2 38 V3 66 M11 94 D6 11 F1 39 V4 67 M10 95 K6 12 F2 40 U4 68 L11 96 B6 13 G1 41 W5 69 L10 97 K3 14 G2 42 V6 70 P6 98 A8 15 H1 43 W6 71 J11 99 B4 16 H2 44 V5 72 J10 100 B3 17 J1 45 U5 73 H11 101 C3 18 J2 46 U6 74 H10 102 C4 19 L1 47 W7 75 G11 103 C8 20 L2 48 V7 76 G10 104 C9 21 M1 49 U7 77 F11 105 B9 22 M2 50 V8 78 F10 106 B8 23 N1 51 V9 79 E10 107 A4 24 N2 52 W11 80 E11 108 C6 25 P1 53 W10 81 D11 109 B7 26 P2 54 V11 82 D10 110 A3 27 R2 55 V10 83 C11 28 R1 56 U11 84 C10 Document Number: 38-05289 Rev. *Y Page 23 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Maximum Ratings Operating Range Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Range Ambient Temperature VDD VDDQ 0 °C to +70 °C 3.3 V– 5% / + 10% 2.5 V – 5% to VDD Storage temperature ................................ –65 °C to +150 °C Commercial Ambient temperature with power applied ................................... –55 °C to +125 °C Industrial Supply voltage on VDD relative to GND .......–0.5 V to +4.6 V Neutron Soft Error Immunity Supply voltage on VDDQ relative to GND ...... –0.5 V to +VDD DC to outputs in tri-state ...................–0.5 V to VDDQ + 0.5 V DC input voltage ................................. –0.5 V to VDD + 0.5 V Parameter –40 °C to +85 °C Description Test Conditions Typ Max* Unit LSBU Logical single bit upsets 25 °C 361 394 FIT/ Mb Static discharge voltage (per MIL-STD-883, method 3015) .......................... > 2001 V LMBU Logical multi bit upsets 25 °C 0 0.01 FIT/ Mb Latch-up current .................................................... > 200 mA SEL Single event latch-up 85 °C 0 0.1 FIT/ Dev Current into outputs (LOW) ........................................ 20 mA * No LMBU or SEL events occurred during testing; this column represents a statistical 2, 95% confidence limit calculation. For more details refer to Application Note AN54908 “Accelerated Neutron SER Testing and Calculation of Terrestrial Failure Rates”. Electrical Characteristics Over the Operating Range Parameter [24, 25] Description VDD Power supply voltage VDDQ I/O supply voltage VOH Output HIGH voltage VOL Output LOW voltage Max Unit 3.135 3.6 V for 3.3 V I/O 3.135 VDD V for 2.5 V I/O 2.375 2.625 V for 3.3 V I/O, IOH =4.0 mA 2.4 – V for 2.5 V I/O, IOH=1.0 mA 2.0 – V – 0.4 V for 2.5 V I/O, IOL=1.0 mA – 0.4 V 2.0 VDD + 0.3 V for 2.5 V I/O 1.7 VDD + 0.3 V for 3.3 V I/O –0.3 0.8 V for 2.5 V I/O –0.3 0.7 V Input leakage current except ZZ GND  VI  VDDQ and MODE –5 5 A Input current of MODE Input = VSS –30 – A Input = VDD – 5 A Input = VSS –5 – A Input = VDD – 30 A GND  VI  VDDQ, output disabled –5 5 A [24] Input HIGH voltage VIL Input LOW voltage [24] Input current of ZZ IOZ Min for 3.3 V I/O, IOL=8.0 mA VIH IX Test Conditions Output leakage current for 3.3 V I/O Notes 24. Overshoot: VIH(AC) < VDD +1.5 V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2 V (Pulse width less than tCYC/2). 25. Tpower up: Assumes a linear ramp from 0 V to VDD(Min) within 200 ms. During this time VIH < VDD and VDDQ < VDD. Document Number: 38-05289 Rev. *Y Page 24 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Electrical Characteristics (continued) Over the Operating Range Parameter [24, 25] IDD Description VDD operating supply ISB1 Automatic CE power-down current – TTL inputs Test Conditions VDD = Max, IOUT = 0 mA, f = fMAX = 1/tCYC Max VDD, device deselected, VIN  VIH or VIN  VIL, f = fMAX = 1/tCYC Min Max Unit 5.0 ns cycle, 200 MHz – 500 mA 6.0 ns cycle, 167 MHz – 450 mA 5.0 ns cycle, 200 MHz – 245 mA 6.0 ns cycle, 167 MHz – 245 mA ISB2 Automatic CE power-down current – CMOS inputs Max VDD, device deselected, All speed VIN  0.3 V or VIN > VDDQ 0.3 V, grades f=0 – 120 mA ISB3 Automatic CE power-down current – CMOS inputs Max VDD, device deselected, 5.0 ns cycle, VIN  0.3 V or VIN > VDDQ 0.3 V, 200 MHz f = fMAX = 1/tCYC 6.0 ns cycle, 167 MHz – 245 mA – 245 mA Max VDD, device deselected, VIN  VIH or VIN  VIL, f=0 – 135 mA ISB4 Automatic CE power-down current – TTL inputs All speed grades Capacitance Parameter [26] Description CADDRESS Address input capacitance CDATA Data input capacitance CCTRL Control input capacitance CCLK CI/O Test Conditions TA = 25 C, f = 1 MHz, VDD = 3.3 V, VDDQ = 2.5 V 100-pin TQFP 165-ball FBGA 209-ball FBGA Unit Max Max Max 6 6 6 pF 5 5 5 pF 8 8 8 pF Clock input capacitance 6 6 6 pF Input/output capacitance 5 5 5 pF Thermal Resistance Parameter [26] Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 100-pin TQFP 165-ball FBGA 209-ball FBGA Unit Package Package Package 24.63 16.3 15.2 C/W 2.28 2.1 1.7 C/W Note 26. Tested initially and after any design or process changes that may affect these parameters. Document Number: 38-05289 Rev. *Y Page 25 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 AC Test Loads and Waveforms Figure 4. AC Test Loads and Waveforms 3.3 V I/O Test Load R = 317  3.3 V OUTPUT OUTPUT RL = 50  Z0 = 50  GND 5 pF R = 351  INCLUDING JIG AND SCOPE 10% 90% 10% 90%  1 ns  1 ns VL = 1.5 V (a) ALL INPUT PULSES VDDQ (c) (b) 2.5 V I/O Test Load R = 1667  2.5 V OUTPUT OUTPUT RL = 50  Z0 = 50  GND 5 pF R = 1538  VL = 1.25 V (a) Document Number: 38-05289 Rev. *Y ALL INPUT PULSES VDDQ INCLUDING JIG AND SCOPE (b) 10% 90% 10% 90%  1 ns  1 ns (c) Page 26 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Switching Characteristics Over the Operating Range Parameter [27, 28] tPower[29] Description VCC(typical) to the first access read or write -200 -167 Unit Min Max Min Max 1 – 1 – ms 5.0 – 6.0 – ns – 200 – 167 MHz Clock tCYC Clock cycle time FMAX Maximum operating frequency tCH Clock HIGH 2.0 – 2.2 – ns tCL Clock LOW 2.0 – 2.2 – ns – 3.0 – 3.4 ns Output Times tCO Data output valid after CLK rise tOEV OE LOW to output valid tDOH Data output hold after CLK rise tCHZ tCLZ Clock to high Z Clock to low Z [30, 31, 32] [30, 31, 32] [30, 31, 32] tEOHZ OE HIGH to output high Z tEOLZ OE LOW to output low Z [30, 31, 32] – 3.0 – 3.4 ns 1.3 – 1.5 – ns – 3.0 – 3.4 ns 1.3 – 1.5 – ns – 3.0 – 3.4 ns 0 – 0 – ns Setup Times tAS Address setup before CLK rise 1.4 – 1.5 – ns tDS Data input setup before CLK rise 1.4 – 1.5 – ns tCENS CEN setup before CLK rise 1.4 – 1.5 – ns tWES WE, BWx setup before CLK rise 1.4 – 1.5 – ns tALS ADV/LD setup before CLK rise 1.4 – 1.5 – ns tCES Chip select setup 1.4 – 1.5 – ns tAH Address hold after CLK rise 0.4 – 0.5 – ns tDH Data input hold after CLK rise 0.4 – 0.5 – ns tCENH CEN hold after CLK rise 0.4 – 0.5 – ns tWEH WE, BWx hold after CLK rise 0.4 – 0.5 – ns tALH ADV/LD hold after CLK rise 0.4 – 0.5 – ns tCEH Chip select hold after CLK rise 0.4 – 0.5 – ns Hold Times Notes 27. Timing reference is 1.5 V when VDDQ = 3.3 V and is 1.25 V when VDDQ = 2.5 V. 28. Test conditions shown in (a) of Figure 4 on page 26 unless otherwise noted. 29. This part has a voltage regulator internally; tpower is the time power needs to be supplied above VDD(minimum) initially, before a read or write operation can be initiated. 30. tCHZ, tCLZ, tEOLZ, and tEOHZ are specified with AC test conditions shown in (b) of Figure 4 on page 26. Transition is measured ±200 mV from steady-state voltage. 31. At any voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve high Z prior to low Z under the same system conditions. 32. This parameter is sampled and not 100% tested. Document Number: 38-05289 Rev. *Y Page 27 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Switching Waveforms Figure 5. Read/Write/Timing [33, 34, 35] 1 2 3 t CYC 4 5 6 A3 A4 7 8 9 A5 A6 10 CLK t CENS t CENH t CES t CEH t CH t CL CEN CE ADV/LD WE BW x A1 ADDRESS A2 A7 t CO t AS t DS t AH Data In-Out (DQ) t DH D(A1) t CLZ D(A2) D(A2+1) t DOH Q(A3) t OEV Q(A4) t CHZ Q(A4+1) D(A5) Q(A6) t OEHZ t DOH t OELZ OE WRITE D(A1) WRITE D(A2) BURST WRITE D(A2+1) READ Q(A3) DON’T CARE READ Q(A4) BURST READ Q(A4+1) WRITE D(A5) READ Q(A6) WRITE D(A7) DESELECT UNDEFINED Notes 33. For this waveform ZZ is tied LOW. 34. When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH. 35. Order of the burst sequence is determined by the status of the MODE (0 = Linear, 1= Interleaved). Burst operations are optional. Document Number: 38-05289 Rev. *Y Page 28 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Switching Waveforms (continued) Figure 6. NOP, STALL and DESELECT Cycles [36, 37, 38] 1 2 A1 A2 3 4 5 A3 A4 6 7 8 9 10 CLK CEN CE ADV/LD WE BWx ADDRESS A5 t CHZ D(A1) Data Q(A2) D(A4) Q(A3) Q(A5) In-Out (DQ) WRITE D(A1) READ Q(A2) STALL READ Q(A3) WRITE D(A4) STALL DON’T CARE NOP READ Q(A5) DESELECT CONTINUE DESELECT UNDEFINED Figure 7. ZZ Mode Timing [39, 40] CLK t ZZ ZZ I t t ZZREC ZZI SUPPLY I DDZZ t RZZI A LL INPUTS (except ZZ) Outputs (Q) DESELECT or READ Only High-Z DON’T CARE Notes 36. For this waveform ZZ is tied LOW. 37. When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH. 38. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrated CEN being used to create a pause. A write is not performed during this cycle. 39. Device must be deselected when entering ZZ mode. See cycle description table for all possible signal conditions to deselect the device. 40. I/Os are in high Z when exiting ZZ sleep mode. Document Number: 38-05289 Rev. *Y Page 29 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Ordering Information The table below contains only the parts that are currently available. If you don’t see what you are looking for, please contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices Speed (MHz) 167 200 Ordering Code Package Diagram Part and Package Type CY7C1470V33-167AXC 51-85050 100-pin TQFP (14 × 20 × 1.4 mm) Pb-free CY7C1470V33-167BZC 51-85165 165-ball FBGA (15 × 17 × 1.4mm) CY7C1474V33-167BGC 51-85167 209-ball FBGA (14 × 22 × 1.76 mm) CY7C1470V33-167AXI 51-85050 100-pin TQFP (14 × 20 × 1.4 mm) Pb-free CY7C1470V33-167BZI 51-85165 165-ball FBGA (15 × 17 × 1.4mm) CY7C1472V33-200AXC 51-85050 100-pin TQFP (14 × 20 × 1.4 mm) Pb-free CY7C1474V33-200BGC 51-85167 209-ball FBGA (14 × 22 × 1.76 mm) CY7C1470V33-200BZI 51-85165 165-ball FBGA (15 × 17 × 1.4mm) Operating Range Commercial lndustrial Commercial lndustrial Ordering Code Definitions CY 7 C 147X V33 - XXX XX X X Temperature Range: X = C or I C = Commercial; I = Industrial Pb-free Package Type: XX = A or BZ or BG A = 100-pin TQFP BZ = 165-ball FBGA BG = 209-ball FBGA Speed Grade: XXX = 167 MHz or 200 MHz V33 = 3.3 V 147X = 1470 or 1472 or 1474 1470 = PL, 2Mb × 36 (72Mb) 1472 = PL, 4Mb × 18 (72Mb) 1474 = PL, 1Mb × 72 (72Mb) Technology Code: C = CMOS Marketing Code: 7 = SRAM Company ID: CY = Cypress Document Number: 38-05289 Rev. *Y Page 30 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Package Diagrams Figure 8. 100-pin TQFP (16 × 22 × 1.6 mm) Package Outline, 51-85050 ș2 ș1 ș SYMBOL DIMENSIONS MIN. NOM. MAX. A A1 1.60 0.05 0.15 NOTE: 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. BODY LENGTH DIMENSION DOES NOT INCLUDE MOLD PROTRUSION/END FLASH. A2 1.35 1.40 1.45 D 15.80 16.00 16.20 MOLD PROTRUSION/END FLASH SHALL D1 13.90 14.00 14.10 E 21.80 22.00 22.20 NOT EXCEED 0.0098 in (0.25 mm) PER SIDE. BODY LENGTH DIMENSIONS ARE MAX PLASTIC E1 19.90 20.00 20.10 R1 0.08 0.20 R2 0.08 0.20 ș 0° 7° ș1 0° ș2 11° 13° 12° 0.20 c b 0.22 0.30 0.38 L 0.45 0.60 0.75 L1 L2 L3 e BODY SIZE INCLUDING MOLD MISMATCH. 3. JEDEC SPECIFICATION NO. REF: MS-026. 1.00 REF 0.25 BSC 0.20 0.65 TYP 51-85050 *G Document Number: 38-05289 Rev. *Y Page 31 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Package Diagrams (continued) Figure 9. 165-ball FBGA ((15 × 17 × 1.40 mm) 0.45 Ball Diameter) Package Outline, 51-85165 51-85165 *E Document Number: 38-05289 Rev. *Y Page 32 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Package Diagrams (continued) Figure 10. 209-ball FBGA (14 × 22 × 1.76 mm) Package Outline, 51-85167 51-85167 *C Document Number: 38-05289 Rev. *Y Page 33 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Acronyms Acronym Document Conventions Description Units of Measure BGA Ball Grid Array CMOS Complementary Metal Oxide Semiconductor °C degree Celsius CE Chip Enable MHz megahertz CEN Clock Enable µA microampere FBGA Fine-Pitch Ball Grid Array mA milliampere I/O Input/Output mm millimeter JTAG Joint Test Action Group ms millisecond NoBL No Bus Latency ns nanosecond OE Output Enable pF picofarad SRAM Static Random Access Memory V volt TCK Test Clock W watt TDI Test Data Input TMS Test Mode Select TDO Test Data Output TQFP Thin Quad Flat Pack WE Write Enable Document Number: 38-05289 Rev. *Y Symbol Unit of Measure Page 34 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Errata This section describes the Ram9 NoBL ZZ pin issues. Details include trigger conditions, the devices affected, proposed workaround and silicon revision applicability. Please contact your local Cypress sales representative if you have further questions. Part Numbers Affected Density & Revision Package Type Operating Range 72Mb-Ram9 NoBL SRAMs: CY7C147*V33 100-pin TQFP 165-ball FBGA Commercial/ Industrial 209-ball FBGA Commercial Product Status All of the devices in the Ram9 72Mb NoBL family are qualified and available in production quantities. Ram9 NoBL ZZ Pin Issues Errata Summary The following table defines the errata applicable to available Ram9 72Mb NoBL family devices. Item 1. Issues ZZ Pin Description Device Fix Status When asserted HIGH, the ZZ pin places device in a “sleep” condition with data integrity preserved.The ZZ pin currently does not have an internal pull-down resistor and hence cannot be left floating externally by the user during normal mode of operation. 72M-Ram9 (90 nm) For the 72M Ram9 (90 nm) devices, this issue was fixed in the new revision. Please contact your local sales rep for availability. 1. ZZ Pin Issue ■ PROBLEM DEFINITION The problem occurs only when the device is operated in the normal mode with ZZ pin left floating. The ZZ pin on the SRAM device does not have an internal pull-down resistor. Switching noise in the system may cause the SRAM to recognize a HIGH on the ZZ input, which may cause the SRAM to enter sleep mode. This could result in incorrect or undesirable operation of the SRAM. ■ TRIGGER CONDITIONS Device operated with ZZ pin left floating. ■ SCOPE OF IMPACT When the ZZ pin is left floating, the device delivers incorrect data. ■ WORKAROUND Tie the ZZ pin externally to ground. ■ FIX STATUS Fix was done for the 72M RAM9 NoBL SRAMs devices. Fixed devices have a new revision. The following table lists the devices affected and the new revision after the fix. Table 1. List of Affected Devices and the new revision Revision before the Fix New Revision after the Fix CY7C147*V33 CY7C147*BV33 Document Number: 38-05289 Rev. *Y Page 35 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Document History Page Document Title: CY7C1470V33/CY7C1472V33/CY7C1474V33, 72-Mbit (2M × 36/4M × 18/1M × 72) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05289 Rev. ECN Orig. of Change Submission Date Description of Change ** 114676 PKS 08/06/2002 New data sheet. *A 121520 CJM 01/27/2003 Changed status from Advanced Information to Preliminary. Updated Features (Updated package offering, removed 300 MHz frequency related information). Updated Selection Guide (Removed 300 MHz frequency related information). Updated Functional Overview (Removed 300 MHz frequency related information). Updated Electrical Characteristics (Removed 300 MHz frequency related information). Updated Switching Characteristics (Removed 300 MHz frequency related information, changed maximum value of tCO, tEOV, tCHZ, tEOHZ parameters from 2.4 ns to 2.6 ns for 250 MHz frequency, changed minimum value of tDOH, tCLZ parameters from 0.8 ns to 1.0 ns for 250 MHz frequency, changed minimum value of tDOH, tCLZ parameters from 1.0 ns to 1.3 ns for 200 MHz frequency). Updated Ordering Information (Updated part numbers). Updated Package Diagrams: spec 51-85115 – Changed revision from *A to *B. spec 51-85143 – Changed revision from *A to *B. *B 223721 NJY 05/14/2004 Updated Features (Removed 250 MHz frequency related information and included 225 MHz frequency related information). Updated Functional Description (Updated description). Updated Logic Block Diagram (Splitted Logic Block Diagram into three Logic Block Diagrams). Updated Functional Overview (Updated description). Updated Boundary Scan Exit Order (Replaced TBD with values for all packages). Updated Electrical Characteristics (Removed 250 MHz frequency related information and included 225 MHz frequency related information, replaced TBD with values for maximum values of IDD, ISB1, ISB2, ISB3, ISB4 parameters). Updated Capacitance (Replaced TBD with values for all packages). Updated Thermal Resistance (Replaced TBD with values for all packages). Updated Switching Characteristics (Removed 250 MHz frequency related information and included 225 MHz frequency related information). Updated Switching Waveforms. Updated Package Diagrams: spec 51-85165 – Changed revision from ** to *A. Added spec 51-85167 **. Removed spec 51-85115 *B. Removed spec 51-85143 *B. *C 235012 RYQ 06/17/2004 Minor Change (To match on the spec system and external web). *D 243572 NJY 07/20/2004 Updated Pin Configurations (Updated Figure 2 (Changed ball C11, D11, E11, F11, G11 from DQPb, DQb, DQb, DQb, DQb to DQPa, DQa, DQa, DQa, DQa (corresponding to CY7C1472V33))). Updated Capacitance (Splitted CIN parameter into CADDRESS, CDATA, CCLK parameters and also updated the values). Document Number: 38-05289 Rev. *Y Page 36 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Document History Page (continued) Document Title: CY7C1470V33/CY7C1472V33/CY7C1474V33, 72-Mbit (2M × 36/4M × 18/1M × 72) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05289 Rev. ECN Orig. of Change Submission Date Description of Change *E 299511 SYT / VBL 12/14/2004 Updated Features (Removed 225 MHz frequency related information and included 250 MHz frequency related information). Updated Selection Guide (Removed 225 MHz frequency related information and included 250 MHz frequency related information). Updated Electrical Characteristics (Removed 225 MHz frequency related information and included 250 MHz frequency related information). Updated Thermal Resistance (Changed value of JA from 16.8 C/W to 24.63 C/W, and changed value of JC from 3.3 C/W to 2.28 C/W for 100-pin TQFP Package). Updated Switching Characteristics (Removed 225 MHz frequency related information and included 250 MHz frequency related information, changed minimum value of tCYC from 4.4 ns to 4.0 ns for 250 MHz frequency). Updated Ordering Information (Updated part numbers (Removed 225 MHz frequency related information and included 250 MHz frequency related information, added Pb-free information for 100-pin TQFP Package and 165-ball FBGA Package, added Industrial Temperature Range part numbers), added comment of ‘Pb-free BG packages availability’ below the Ordering Information). *F 323039 PCI 02/23/2005 Changed status from Preliminary to Final. Updated Selection Guide (Unshaded 250 MHz frequency related information). Updated Pin Configurations (Address expansion pins/balls in the pinouts for all packages are modified as per JEDEC standard, updated Figure 3 (Changed package name from 209-ball PBGA to 209-ball FBGA)). Updated Pin Definitions (Added Address Expansion pins). Updated Electrical Characteristics (Updated Test Conditions of VOL, VOH parameters, unshaded 250 MHz frequency related information). Updated Switching Characteristics (Unshaded 250 MHz frequency related information). Updated Ordering Information (Updated part numbers, unshaded all shaded areas, removed comment of ‘Pb-free BG packages availability’ below the Ordering Information). *G 351937 PCI 04/19/2005 Updated Ordering Information (Updated part numbers). *H 416221 RXU 12/22/2005 Changed address of Cypress Semiconductor Corporation from “3901 North First Street” to “198 Champion Court”. Updated Electrical Characteristics (Updated Note 25 (Changed VDDQ < VDD to VDDQ < VDD), changed description of IX parameter from Input Load Current except ZZ and MODE to Input Leakage Current except ZZ and MODE, changed minimum value of IX parameter (corresponding to Input Current of MODE (Input = VSS)) from –5 µA to –30 µA, changed maximum value of IX parameter (corresponding to Input Current of MODE (Input = VDD)) from 30 µA to 5 µA, changed minimum value of IX parameter (corresponding to Input Current of ZZ (Input = VSS)) from –30 µA to –5 µA, changed maximum value of IX parameter (corresponding to Input Current of ZZ (Input = VDD)) from 5 µA to 30 µA). Updated Ordering Information (Updated part numbers, replaced Package Name column with Package Diagram in the Ordering Information table). Replaced Three-state with Tri-state in all instances across the document. Updated to new template. Document Number: 38-05289 Rev. *Y Page 37 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Document History Page (continued) Document Title: CY7C1470V33/CY7C1472V33/CY7C1474V33, 72-Mbit (2M × 36/4M × 18/1M × 72) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05289 Rev. ECN Orig. of Change Submission Date Description of Change *I 472335 VKN 06/27/2006 Updated Pin Configurations (Updated Figure 3 (Corrected the ball name for H9 from VSSQ to VSS). Updated TAP AC Switching Characteristics (Changed minimum value of tTH, tTL parameters from 25 ns to 20 ns, changed maximum value of tTDOV parameter from 5 ns to 10 ns). Updated Maximum Ratings (Added Maximum Rating for Supply Voltage on VDDQ Relative to GND). Updated Ordering Information (Updated part numbers). Updated Package Diagrams: spec 51-85050 – Changed revision from *A to *B. *J 2756998 VKN 08/28/2009 Added Neutron Soft Error Immunity. Updated Ordering Information (Updated part numbers (Including parts that are available), and modified the disclaimer for the Ordering information). Updated Package Diagrams: spec 51-85165 – Changed revision from *A to *B. Updated to new template. *K 2903057 NJY 04/01/2010 Updated Ordering Information (Updated part numbers). Updated Package Diagrams: spec 51-85050 – Changed revision from *B to *C. spec 51-85167 – Changed revision from ** to *A. *L 3033272 NJY 09/19/2010 Updated Ordering Information: No change in part numbers. Added Ordering Code Definitions. Added Acronyms and Units of Measure. Minor edits. Updated to new template. Completing Sunset Review. *M 3052882 NJY 10/08/2010 Updated Ordering Information (Updated part numbers). *N 3357114 PRIT 08/29/2011 Updated Package Diagrams: spec 51-85050 – Changed revision from *C to *D. spec 51-85165 – Changed revision from *B to *C. spec 51-85167 – Changed revision from *A to *B. Completing Sunset Review. *O 3403584 PRIT 10/12/2011 Updated Ordering Information (Updated part numbers). Updated Package Diagrams: spec 51-85165 – Changed revision from *C to *D. *P 3638614 PRIT 06/06/2012 Updated Features (Removed 250 MHz frequency related information, removed 165-ball FBGA package related information (corresponding to CY7C1472V33)). Updated Selection Guide (Removed 250 MHz frequency related information). Updated Pin Configurations (Updated Figure 2 (Removed CY7C1472V33 related information)). Updated Functional Overview (Removed 250 MHz frequency related information). Updated IEEE 1149.1 Serial Boundary Scan (JTAG) (Removed CY7C1472V33 related information). Updated Identification Register Definitions (Removed CY7C1472V33 related information). Updated Scan Register Sizes (Removed “Bit Size (× 18)” column). Removed Boundary Scan Exit Order (Corresponding to CY7C1472V33). Document Number: 38-05289 Rev. *Y Page 38 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Document History Page (continued) Document Title: CY7C1470V33/CY7C1472V33/CY7C1474V33, 72-Mbit (2M × 36/4M × 18/1M × 72) Pipelined SRAM with NoBL™ Architecture Document Number: 38-05289 Rev. ECN Orig. of Change Submission Date *P (cont.) 3638614 PRIT 06/06/2012 Updated Electrical Characteristics (Removed 250 MHz frequency related information). Updated Switching Characteristics (Removed 250 MHz frequency related information). Updated Ordering Information (Updated part numbers). *Q 3755966 PRIT 09/26/2012 Updated Package Diagrams: spec 51-85167 – Changed revision from *B to *C. Completing Sunset Review. *R 3971410 PRIT 04/18/2013 Updated Ordering Information (Updated part numbers). Added Errata. *S 4042037 PRIT 06/27/2013 Added Errata Footnotes. Updated to new template. *T 4146627 PRIT 10/04/2013 Updated Errata: Removed CY7C147* related information in all instances across the document. *U 4539205 PRIT 10/15/2014 Updated Package Diagrams: spec 51-85050 – Changed revision from *D to *E. Completing Sunset Review. *V 4571917 PRIT 12/29/2014 Updated Functional Description: Added “For a complete list of related documentation, click here.” at the end. Updated Package Diagrams: spec 51-85165 – Changed revision from *D to *E. *W 5513955 PRIT 11/08/2016 Updated Package Diagrams: spec 51-85050 – Changed revision from *E to *F. Updated to new template. Completing Sunset Review. *X 6015296 RMES 01/05/2018 Updated Package Diagrams: spec 51-85050 – Changed revision from *F to *G. Updated to new template. Completing Sunset Review. *Y 6524879 RMES 03/28/2019 Updated Ordering Information: Updated part numbers. Updated to new template. Document Number: 38-05289 Rev. *Y Description of Change Page 39 of 40 CY7C1470V33 CY7C1472V33 CY7C1474V33 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. 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You shall indemnify and hold Cypress, its directors, officers, employees, agents, affiliates, distributors, and assigns harmless from and against all claims, costs, damages, and expenses, arising out of any claim, including claims for product liability, personal injury or death, or property damage arising from any use of a Cypress product as a Critical Component in a High-Risk Device. Cypress products are not intended or authorized for use as a Critical Component in any High-Risk Device except to the limited extent that (i) Cypress’s published data sheet for the product explicitly states Cypress has qualified the product for use in a specific High-Risk Device, or (ii) Cypress has given you advance written authorization to use the product as a Critical Component in the specific High-Risk Device and you have signed a separate indemnification agreement. Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners. Document Number: 38-05289 Rev. *Y NoBL™ and No Bus Latency™ are trademarks of Cypress Semiconductor Corporation. Revised March 28, 2019 Page 40 of 40