CY7C1512AV18-250BZXIT

CY7C1512AV18 CY7C1514AV18 72-Mbit QDR® II SRAM 2-Word Burst Architecture Features Configurations ■ Separate independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1512AV18 – 4M x 18 ■ 250 MHz Clock for high Bandwidth Functional Description ■ 2-word Burst on all Accesses ■ Double Data Rate (DDR) Interfaces on both Read and Write Ports (data transferred at 500 MHz) at 250 MHz ■ Two Input Clocks (K and K) for precise DDR Timing ❐ SRAM uses rising edges only ■ Two Input Clocks for Output Data (C and C) to minimize Clock Skew and Flight Time mismatches ■ Echo Clocks (CQ and CQ) simplify Data Capture in High Speed Systems ■ Single Multiplexed Address Input Bus latches Address Inputs for both Read and Write Ports ■ Separate Port Selects for Depth Expansion ■ Synchronous Internally Self-timed Writes ■ QDR® II operates with 1.5 Cycle Read Latency when Delay Lock Loop (DLL) is enabled ■ Operates as a QDR I device with one Cycle Read Latency in DLL Off Mode ■ Available in x 18, and x 36 Configurations ■ Full Data Coherency, providing Most Current Data ■ Core VDD = 1.8V (±0.1V); I/O VDDQ = 1.4V to VDD ■ Available in 165-Ball FBGA Package (15 x 17 x 1.4 mm) ■ Offered in both Pb-free and non Pb-free Packages ■ Variable Drive HSTL Output Buffers ■ JTAG 1149.1 compatible Test Access Port ■ Delay Lock Loop (DLL) for Accurate Data Placement CY7C1514AV18 – 2M x 36 The CY7C1512AV18, and CY7C1514AV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR II architecture. QDR II architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II architecture has separate data inputs and data outputs to completely eliminate the need to ‘turnaround’ the data bus that exists with common I/O devices. Access to each port is through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR II read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with two 18-bit words (CY7C1512AV18), or 36-bit words (CY7C1514AV18) that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks (K and K and C and C), memory bandwidth is maximized while simplifying system design by eliminating bus turnarounds. Depth expansion is accomplished with port selects, which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the C or C (or K or K in a single clock domain) input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. Selection Guide Description Maximum Operating Frequency Maximum Operating Current 250 MHz 200 MHz 167 MHz Unit 250 200 167 MHz mA x18 900 800 750 x36 1100 900 800 Cypress Semiconductor Corporation Document #: 001-06984 Rev. *E • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised August 24, 2009 [+] Feedback CY7C1512AV18 CY7C1514AV18 Logic Block Diagram (CY7C1512AV18) K CLK Gen. DOFF 21 Address Register Read Add. Decode K Write Reg 2M x 18 Array Address Register Write Reg 2M x 18 Array A(20:0) 21 18 Write Add. Decode D[17:0] A(20:0) RPS Control Logic C Read Data Reg. C CQ 36 VREF WPS BWS[1:0] 18 Control Logic 18 Reg. Reg. 18 Reg. 18 CQ 18 Q[17:0] Logic Block Diagram (CY7C1514AV18) K CLK Gen. DOFF 20 Address Register Read Add. Decode K Write Reg 1M x 36 Array Address Register Write Reg 1M x 36 Array A(19:0) 20 36 Write Add. Decode D[35:0] A(19:0) RPS Control Logic C Read Data Reg. C CQ 72 VREF WPS BWS[3:0] 36 Control Logic Document #: 001-06984 Rev. *E 36 Reg. Reg. 36 Reg. 36 CQ 36 Q[35:0] Page 2 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 Pin Configuration The pin configuration for CY7C1512AV18 and CY7C1514AV18 follow. [1] 165-Ball FBGA (15 x 17 x 1.4 mm) Pinout CY7C1512AV18 (4M x 18) 1 2 3 4 5 6 7 8 9 10 11 A CQ NC/144M A WPS BWS1 K NC/288M RPS A A CQ B NC Q9 D9 A NC K BWS0 A NC NC Q8 C NC NC D10 VSS A A A VSS NC Q7 D8 D NC D11 Q10 VSS VSS VSS VSS VSS NC NC D7 E NC NC Q11 VDDQ VSS VSS VSS VDDQ NC D6 Q6 F NC Q12 D12 VDDQ VDD VSS VDD VDDQ NC NC Q5 G NC D13 Q13 VDDQ VDD VSS VDD VDDQ NC NC D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC D14 VDDQ VDD VSS VDD VDDQ NC Q4 D4 K NC NC Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 L NC Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS A A A VSS NC NC D1 P NC NC Q17 A A C A A NC D0 Q0 R TDO TCK A A A C A A A TMS TDI CY7C1514AV18 (2M x 36) 1 2 3 4 5 6 7 8 9 10 11 A CQ NC/288M A WPS BWS2 K BWS1 RPS A NC/144M CQ B Q27 Q18 D18 A BWS3 K BWS0 A D17 Q17 Q8 C D27 Q28 D19 VSS A A A VSS D16 Q7 D8 D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7 E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ Q15 D6 Q6 F Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ D14 Q14 Q5 G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 D4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 Q3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 Q2 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2 N D34 D26 Q25 VSS A A A VSS Q10 D9 D1 P Q35 D35 Q26 A A C A A Q9 D0 Q0 R TDO TCK A A A C A A A TMS TDI Note 1. NC/144M and NC/288M are not connected to the die and can be tied to any voltage level. Document #: 001-06984 Rev. *E Page 3 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 Pin Definitions Pin Name I/O Pin Description D[x:0] InputData Input Signals. Sampled on the rising edge of K and K clocks during valid write operations. Synchronous CY7C1512AV18 − D[17:0] CY7C1514AV18 − D[35:0] WPS InputWrite Port Select − Active LOW. Sampled on the rising edge of the K clock. When asserted active, a Synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0]. BWS0, BWS1, BWS2, BWS3 InputByte Write Select 0, 1, 2, and 3 − Active LOW. Sampled on the rising edge of the K and K clocks during Synchronous write operations. Used to select which byte is written into the device during the current portion of the write operations. Bytes not written remain unaltered. CY7C1512AV18 − BWS0 controls D[8:0] and BWS1 controls D[17:9]. CY7C1514AV18 − BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls D[35:27]. All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select ignores the corresponding byte of data and it is not written into the device. A InputAddress Inputs. Sampled on the rising edge of the K (read address) and K (write address) clocks during Synchronous active read and write operations. These address inputs are multiplexed for both read and write operations. Internally, the device is organized as 4M x 18 (2 arrays each of 2M x 18) for CY7C1512AV18, and 2M x 36 (2 arrays each of 1M x 36) for CY7C1514AV18. Therefore, only 21 address inputs are needed to access the entire memory array of CY7C1512AV18, and 20 address inputs for CY7C1514AV18. These inputs are ignored when the appropriate port is deselected. Q[x:0] OutputData Output Signals. These pins drive out the requested data during a read operation. Valid data is Synchronous driven out on the rising edge of the C and C clocks during read operations, or K and K when in single clock mode. When the read port is deselected, Q[x:0] are automatically tristated. CY7C1512AV18 − Q[17:0] CY7C1514AV18 − Q[35:0] RPS InputRead Port Select − Active LOW. Sampled on the rising edge of positive input clock (K). When active, a Synchronous read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is allowed to complete and the output drivers are automatically tristated following the next rising edge of the C clock. Each read access consists of a burst of four sequential transfers. C Input Clock Positive Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. Use C and C together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 7 for further details. C Input Clock Negative Input Clock for Output Data. C is used in conjunction with C to clock out the read data from the device. Use C and C together to deskew the flight times of various devices on the board back to the controller. See Application Example on page 7 for further details. K Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising edge of K. K Input Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and to drive out data through Q[x:0] when in single clock mode. CQ Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock for output data (C) of the QDR II. In single clock mode, CQ is generated with respect to K. The timing for the echo clocks is shown in Switching Characteristics on page 20. CQ Echo Clock CQ Referenced with Respect to C. This is a free running clock and is synchronized to the input clock for output data (C) of the QDR II. In single clock mode, CQ is generated with respect to K. The timing for the echo clocks is shown in the Switching Characteristics on page 20. ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected between ZQ and ground. Alternatively, connect this pin directly to VDDQ, which enables the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected. Document #: 001-06984 Rev. *E Page 4 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 Pin Definitions Pin Name DOFF (continued) I/O Pin Description Input DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device. The timing in the operation with the DLL turned off differs from those listed in this data sheet. For normal operation, connect this pin to a pull up through a 10 KΩ or less pull up resistor. The device behaves in QDR I mode when the DLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz with QDR I timing. TDO Output TCK Input TCK Pin for JTAG. TDI Input TDI Pin for JTAG. TMS Input TMS Pin for JTAG. NC N/A Not Connected to the Die. Can be tied to any voltage level. NC/144M Input Not Connected to the Die. Can be tied to any voltage level. NC/288M Input Not Connected to the Die. Can be tied to any voltage level. VREF VDD VSS VDDQ InputReference TDO for JTAG. Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC measurement points. Power Supply Power Supply Inputs to the Core of the Device. Ground Ground for the device. Power Supply Power Supply Inputs for the Outputs of the Device. Document #: 001-06984 Rev. *E Page 5 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 Functional Overview The CY7C1512AV18, and CY7C1514AV18 are synchronous pipelined Burst SRAMs with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and flows out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the QDR II completely eliminates the need to turn-around the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of two 18-bit data transfers in the case of CY7C1512AV18, and two 36-bit data transfers in the case of CY7C1514AV18 in one clock cycle. This device operates with a read latency of one and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS then the device behaves in QDR I mode with a read latency of one clock cycle. Accesses for both ports are initiated on the rising edge of the positive input clock (K). All synchronous input timing is referenced from the rising edge of the input clocks (K and K) and all output timing is referenced to the output clocks (C and C, or K and K when in single clock mode). All synchronous data inputs (D[x:0]) pass through input registers controlled by the input clocks (K and K). All synchronous data outputs (Q[x:0]) pass through output registers controlled by the rising edge of the output clocks (C and C, or K and K when in single clock mode). All synchronous control (RPS, WPS, BWS[x:0]) inputs pass through input registers controlled by the rising edge of the input clocks (K and K). CY7C1512AV18 is described in the following sections. The same basic descriptions apply to CY7C1514AV18. Read Operations The CY7C1512AV18 is organized internally as two arrays of 2M x 18. Accesses are completed in a burst of two sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the positive input clock (K). The address is latched on the rising edge of the K clock. The address presented to the address inputs is stored in the read address register. Following the next K clock rise, the corresponding lowest order 18-bit word of data is driven onto the Q[17:0] using C as the output timing reference. On the subsequent rising edge of C, the next 18-bit data word is driven onto the Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the output clock (C and C or K and K when in single clock mode). Synchronous internal circuitry automatically tristates the outputs following the next rising edge of the output clocks (C/C). This enables for a seamless transition between devices without the insertion of wait states in a depth expanded memory. Write Operations Write operations are initiated by asserting WPS active at the rising edge of the positive input clock (K). On the same K clock rise the data presented to D[17:0] is latched and stored into the lower 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative Document #: 001-06984 Rev. *E input clock (K), the address is latched and the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. The 36 bits of data are then written into the memory array at the specified location. When deselected, the write port ignores all inputs after the pending write operations have been completed. Byte Write Operations Byte write operations are supported by the CY7C1512AV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate Byte Write Select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the Byte write select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature can be used to simplify read, modify, or write operations to a byte write operation. Single Clock Mode The CY7C1510AV18 can be used with a single clock that controls both the input and output registers. In this mode the device recognizes only a single pair of input clocks (K and K) that control both the input and output registers. This operation is identical to the operation if the device had zero skew between the K/K and C/C clocks. All timing parameters remain the same in this mode. To use this mode of operation, the user must tie C and C HIGH at power on. This function is a strap option and not alterable during device operation. Concurrent Transactions The read and write ports on the CY7C1512AV18 operate completely independently of one another. As each port latches the address inputs on different clock edges, the user can read or write to any location, regardless of the transaction on the other port. The user can start reads and writes in the same clock cycle. If the ports access the same location at the same time, the SRAM delivers the most recent information associated with the specified address location. This includes forwarding data from a write cycle that was initiated on the previous K clock rise. Depth Expansion The CY7C1512AV18 has a port select input for each port. This enables for easy depth expansion. Both port selects are sampled on the rising edge of the positive input clock only (K). Each port select input can deselect the specified port. Deselecting a port does not affect the other port. All pending transactions (read and write) are completed before the device is deselected. Programmable Impedance An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to enable the SRAM to adjust its output driver impedance. The value of RQ must be 5X the value of the intended line impedance driven by the SRAM. The allowable range of RQ to guarantee impedance matching with a tolerance of ±15% is between 175Ω and 350Ω, with VDDQ = 1.5V. The output impedance is adjusted every 1024 cycles upon power up to account for drifts in supply voltage and temperature. Page 6 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 Echo Clocks DLL Echo clocks are provided on the QDR II to simplify data capture on high-speed systems. Two echo clocks are generated by the QDR II. CQ is referenced with respect to C and CQ is referenced with respect to C. These are free running clocks and are synchronized to the output clock of the QDR II. In the single clock mode, CQ is generated with respect to K and CQ is generated with respect to K. The timing for the echo clocks is shown in Switching Characteristics on page 20. These chips use a DLL that is designed to function between 120 MHz and the specified maximum clock frequency. During power up, when the DOFF is tied HIGH, the DLL is locked after 1024 cycles of stable clock. The DLL can also be reset by slowing or stopping the input clocks K and K for a minimum of 30 ns. However, it is not necessary to reset the DLL to lock to the desired frequency. The DLL automatically locks 1024 clock cycles after a stable clock is presented. The DLL may be disabled by applying ground to the DOFF pin. When the DLL is turned off, the device behaves in QDR I mode (with one cycle latency and a longer access time). For information refer to the application note DLL Considerations in QDRII/DDRII.. Application Example Figure 1 shows two QDR II used in an application. Figure 1. Application Example SRAM #1 Vt R D A R P S # W P S # B W S # ZQ CQ/CQ# Q C C# K K# DATA IN DATA OUT Address RPS# BUS WPS# MASTER BWS# (CPU CLKIN/CLKIN# or Source K ASIC) Source K# R = 250ohms SRAM #2 R P S # D A R W P S # B W S # ZQ R = 250ohms CQ/CQ# Q C C# K K# Vt Vt Delayed K Delayed K# R Document #: 001-06984 Rev. *E R = 50ohms Vt = Vddq/2 Page 7 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 Truth Table The truth table for CY7C1512AV18, and CY7C1514AV18 follows.[2, 3, 4, 5, 6, 7] Operation K RPS WPS DQ DQ Write Cycle: Load address on the rising edge of K; input write data on K and K rising edges. L-H X L D(A + 0) at K(t) ↑ Read Cycle: Load address on the rising edge of K; wait one and a half cycle; read data on C and C rising edges. L-H L X Q(A + 0) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑ NOP: No Operation L-H H H D=X Q = High-Z D=X Q = High-Z Stopped X X Previous State Previous State Standby: Clock Stopped D(A + 1) at K(t) ↑ Write Cycle Descriptions The write cycle description table for CY7C1512AV18 follow.[2, 8] BWS0 BWS1 K K L L L–H – L L – L H L–H L H – H L L–H H L – H H L–H H H – Comments During the data portion of a write sequence : Both bytes (D[17:0]) are written into the device. L-H During the data portion of a write sequence : Both bytes (D[17:0]) are written into the device. – During the data portion of a write sequence : Only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. L–H During the data portion of a write sequence : Only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. – During the data portion of a write sequence : Only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. L–H During the data portion of a write sequence : Only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. – No data is written into the devices during this portion of a write operation. L–H No data is written into the devices during this portion of a write operation. Notes 2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, ↑represents rising edge. 3. Device powers up deselected with the outputs in a tristate condition. 4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst. 5. “t” represents the cycle at which a Read/Write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle. 6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode. 7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 8. Is based on a write cycle that was initiated in accordance with the Write Cycle Descriptions table. BWS0, BWS1, BWS2 and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved. Document #: 001-06984 Rev. *E Page 8 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 Write Cycle Descriptions The write cycle description table for CY7C1514AV18 follow.[2, 8] BWS0 BWS1 BWS2 BWS3 K K Comments L L L L L–H – During the data portion of a write sequence, all four bytes (D[35:0]) are written into the device. L L L L – L H H H L–H L H H H – H L H H L–H H L H H – H H L H L–H H H L H – H H H L L–H H H H L – H H H H L–H H H H H – Document #: 001-06984 Rev. *E L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into the device. – During the data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. – During the data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. – During the data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. – During the data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. – No data is written into the device during this portion of a write operation. L–H No data is written into the device during this portion of a write operation. Page 9 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 IEEE 1149.1 Serial Boundary Scan (JTAG) These SRAMs incorporate a serial boundary scan Test Access Port (TAP) in the FBGA package. This part is fully compliant with IEEE Standard #1149.1-2001. The TAP operates using JEDEC standard 1.8V I/O logic levels. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternatively be connected to VDD through a pull up resistor. TDO must be left unconnected. Upon power up, the device comes up in a reset state, which does not interfere with the operation of the device. Test Access Port—Test Clock The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. This pin may be left unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI pin is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see the TAP Controller State Diagram on page 12. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) on any register. Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins, as shown in TAP Controller Block Diagram on page 13. Upon power up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state, as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board level serial test path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This enables shifting of data through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all of the input and output pins on the SRAM. Several No Connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The boundary scan register is loaded with the contents of the RAM input and output ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can be used to capture the contents of the input and output ring. The Boundary Scan Order on page 16 shows the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Test Data-Out (TDO) Identification (ID) Register The TDO output pin is used to serially clock data out from the registers. The output is active, depending upon the current state of the TAP state machine (see Instruction Codes on page 15). The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in Identification Register Definitions on page 15. Performing a TAP Reset A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This Reset does not affect the operation of the SRAM and can be performed while the SRAM is operating. At power up, the TAP is reset internally to ensure that TDO comes up in a high-Z state. TAP Registers Registers are connected between the TDI and TDO pins to scan the data in and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. Document #: 001-06984 Rev. *E TAP Instruction Set Eight different instructions are possible with the three-bit instruction register. All combinations are listed in Instruction Codes on page 15. Three of these instructions are listed as RESERVED and must not be used. The other five instructions are described in this section in detail. Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction after it is shifted in, the TAP controller must be moved into the Update-IR state. Page 10 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 IDCODE BYPASS The IDCODE instruction loads a vendor-specific, 32-bit code into the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register at power up or whenever the TAP controller is supplied a Test-Logic-Reset state. When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. SAMPLE Z The SAMPLE Z instruction connects the boundary scan register between the TDI and TDO pins when the TAP controller is in a Shift-DR state. The SAMPLE Z command puts the output bus into a High-Z state until the next command is supplied during the Update IR state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the input and output pins is captured in the boundary scan register. The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output undergoes a transition. The TAP may then try to capture a signal while in transition (metastable state). This does not harm the device, but there is no guarantee as to the value that is captured. Repeatable results may not be possible. To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller's capture setup plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the boundary scan register. EXTEST The EXTEST instruction drives the preloaded data out through the system output pins. This instruction also connects the boundary scan register for serial access between the TDI and TDO in the Shift-DR controller state. EXTEST OUTPUT BUS TRISTATE IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tristate mode. The boundary scan register has a special bit located at bit #108. When this scan cell, called the “extest output bus tristate,” is latched into the preload register during the Update-DR state in the TAP controller, it directly controls the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it enables the output buffers to drive the output bus. When LOW, this bit places the output bus into a High-Z condition. This bit can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the Shift-DR state. During Update-DR, the value loaded into that shift-register cell latches into the preload register. When the EXTEST instruction is entered, this bit directly controls the output Q-bus pins. Note that this bit is pre-set LOW to enable the output when the device is powered up, and also when the TAP controller is in the Test-Logic-Reset state. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. After the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required, that is, while the data captured is shifted out, the preloaded data can be shifted in. Document #: 001-06984 Rev. *E Page 11 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 TAP Controller State Diagram The state diagram for the TAP controller follows. [9] 1 TEST-LOGIC RESET 0 0 TEST-LOGIC/ IDLE 1 SELECT DR-SCAN 1 1 SELECT IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 SHIFT-DR 0 SHIFT-IR 1 1 EXIT1-DR 1 EXIT1-IR 0 0 PAUSE-IR 1 0 1 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 1 0 PAUSE-DR 0 0 0 1 0 Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 001-06984 Rev. *E Page 12 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 TAP Controller Block Diagram 0 Bypass Register 2 Selection Circuitry TDI 1 0 Selection Circuitry Instruction Register 31 30 29 . . 2 1 0 1 0 TDO Identification Register 108 . . . . 2 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics Over the Operating Range [10, 11, 12] Parameter Description Test Conditions Min Max Unit VOH1 Output HIGH Voltage IOH = −2.0 mA 1.4 V VOH2 Output HIGH Voltage IOH = −100 μA 1.6 V VOL1 Output LOW Voltage IOL = 2.0 mA 0.4 V VOL2 Output LOW Voltage IOL = 100 μA 0.2 V VIH Input HIGH Voltage VIL Input LOW Voltage IX Input and Output Load Current 0.65VDD VDD + 0.3 GND ≤ VI ≤ VDD V –0.3 0.35VDD V –5 5 μA Notes 10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics table. 11. Overshoot: VIH(AC) < VDDQ + 0.85V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > −1.5V (Pulse width less than tCYC/2). 12. All Voltage referenced to Ground. Document #: 001-06984 Rev. *E Page 13 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 TAP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min Max Unit 20 MHz tTCYC TCK Clock Cycle Time tTF TCK Clock Frequency tTH TCK Clock HIGH 20 ns tTL TCK Clock LOW 20 ns tTMSS TMS Setup to TCK Clock Rise 5 ns tTDIS TDI Setup to TCK Clock Rise 5 ns tCS Capture Setup to TCK Rise 5 ns tTMSH TMS Hold after TCK Clock Rise 5 ns tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns 50 ns Setup Times Hold Times Output Times tTDOV TCK Clock LOW to TDO Valid tTDOX TCK Clock LOW to TDO Invalid 10 0 ns ns TAP Timing and Test Conditions Figure 2 shows the TAP timing and test conditions. [14] Figure 2. TAP Timing and Test Conditions 0.9V ALL INPUT PULSES 1.8V 50Ω 0.9V TDO 0V Z0 = 50Ω (a) CL = 20 pF tTH GND tTL Test Clock TCK tTCYC tTMSH tTMSS Test Mode Select TMS tTDIS tTDIH Test Data In TDI Test Data Out TDO tTDOV tTDOX Notes 13. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 14. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document #: 001-06984 Rev. *E Page 14 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 Identification Register Definitions Value Instruction Field Description CY7C1512AV18 CY7C1514AV18 000 000 Cypress Device ID (28:12) 11010011010010100 11010011010100100 Cypress JEDEC ID (11:1) 00000110100 00000110100 Allows unique identification of SRAM vendor. ID Register Presence (0) 1 1 Indicates the presence of an ID register. Revision Number (31:29) Version number. Defines the type of SRAM. Scan Register Sizes Register Name Bit Size Instruction 3 Bypass 1 ID 32 Boundary Scan 109 Instruction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. SAMPLE Z 010 Captures the input and output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures the input and output contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document #: 001-06984 Rev. *E Page 15 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P 29 9G 57 5B 85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N 32 9F 60 5C 88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 3M 11 10N 39 11D 67 1C 95 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43 11C 71 1D 99 2N 16 9N 44 9B 72 2C 100 2P 17 11L 45 10B 73 3E 101 1P 18 11M 46 11A 74 2D 102 3R 19 9L 47 10A 75 2E 103 4R 20 10L 48 9A 76 1E 104 4P 21 11K 49 8B 77 2F 105 5P 22 10K 50 7C 78 3F 106 5N 23 9J 51 6C 79 1G 107 5R 24 9K 52 8A 80 1F 108 Internal 25 10J 53 7A 81 3G 26 11J 54 7B 82 2G 27 11H 55 6B 83 1H Document #: 001-06984 Rev. *E Page 16 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 Power Up Sequence in QDR II SRAM DLL Constraints QDR II SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. ■ DLL uses K clock as its synchronizing input. The input must have low phase jitter, which is specified as tKC Var. ■ The DLL functions at frequencies down to 120 MHz. ■ If the input clock is unstable and the DLL is enabled, then the DLL may lock onto an incorrect frequency, causing unstable SRAM behavior. To avoid this, provide1024 cycles stable clock to relock to the desired clock frequency. Power Up Sequence ■ Apply power and drive DOFF either HIGH or LOW (All other inputs can be HIGH or LOW). ❐ Apply VDD before VDDQ. ❐ Apply VDDQ before VREF or at the same time as VREF. ❐ Drive DOFF HIGH. ■ Provide stable DOFF (HIGH), power and clock (K, K) for 1024 cycles to lock the DLL. ~ ~ Figure 3. Power Up Waveforms K K ~ ~ Unstable Clock > 1024 Stable clock Start Normal Operation Clock Start (Clock Starts after V DD / V DDQ Stable) VDD / VDDQ DOFF Document #: 001-06984 Rev. *E V DD / V DDQ Stable (< +/- 0.1V DC per 50ns ) Fix High (or tie to VDDQ) Page 17 of 24 [+] Feedback CY7C1512AV18 CY7C1514AV18 Maximum Ratings Neutron Soft Error Immunity Exceeding maximum ratings may impair the useful life of the device. These user guidelines are not tested. Parameter Storage Temperature ................................. –65°C to +150°C LSBU Logical Single-Bit Upsets 25°C LMBU Logical Multi-Bit Upsets Single Event Latch up Ambient Temperature with Power Applied.. –55°C to +125°C Supply Voltage on VDD Relative to GND ........–0.5V to +2.9V Supply Voltage on VDDQ Relative to GND.......–0.5V to +VDD DC Applied to Outputs in High-Z ........ –0.5V to VDDQ + 0.5V DC Input Voltage [11] .............................. –0.5V to VDD + 0.5V Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V Latch up Current.................................................... > 200 mA SEL Description Test Con- Typ ditions Max* Unit 320 368 FIT/ Mb 25°C 0 0.01 FIT/ Mb 85°C 0 0.1 FIT/ Dev * No LMBU or SEL events occurred during testing; this column represents a statistical χ2, 95% confidence limit calculation. For more details refer to Application Note AN 54908 “Accelerated Neutron SER Testing and Calculation of Terrestrial Failure Rates” Operating Range Range Commercial Industrial Ambient Temperature (TA) VDD [15] VDDQ [15] 0°C to +70°C 1.8 ± 0.1V 1.4V to VDD –40°C to +85°C Electrical Characteristics DC Electrical Characteristics Over the Operating Range [12] Min Typ Max Unit VDD Parameter Power Supply Voltage Description 1.7 1.8 1.9 V VDDQ I/O Supply Voltage 1.4 1.5 VDD V VOH Output HIGH Voltage Note 16 VDDQ/2 – 0.12 VDDQ/2 + 0.12 V VOL Output LOW Voltage Note 17 VDDQ/2 – 0.12 VDDQ/2 + 0.12 V VOH(LOW) Output HIGH Voltage IOH = −0.1 mA, Nominal Impedance VDDQ – 0.2 VDDQ V VOL(LOW) Output LOW Voltage IOL = 0.1 mA, Nominal Impedance VSS 0.2 V VIH Input HIGH Voltage VREF + 0.1 VDDQ + 0.3 V VIL Input LOW Voltage IX Input Leakage Current IOZ Output Leakage Current VREF Input Reference Voltage IDD [19] VDD Operating Supply Test Conditions [18] –0.3 VREF – 0.1 V GND ≤ VI ≤ VDDQ −5 5 μA GND ≤ VI ≤ VDDQ, Output Disabled −5 5 μA Typical Value = 0.75V VDD = Max, IOUT = 0 mA, f = fMAX = 1/tCYC 0.95 V 250 MHz (x18) 0.68 0.75 900 mA (x36) 1100 200 MHz (x18) 800 (x36) 900 167 MHz (x18) 750 (x36) 800 Notes 15. Power up: Assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 16. Output are impedance controlled. IOH = −(VDDQ/2)/(RQ/5) for values of 175 ohms