Please note that Cypress is an Infineon Technologies Company.
The document following this cover page is marked as “Cypress” document as this is the
company that originally developed the product. Please note that Infineon will continue
to offer the product to new and existing customers as part of the Infineon product
portfolio.
Continuity of document content
The fact that Infineon offers the following product as part of the Infineon product
portfolio does not lead to any changes to this document. Future revisions will occur
when appropriate, and any changes will be set out on the document history page.
Continuity of ordering part numbers
Infineon continues to support existing part numbers. Please continue to use the
ordering part numbers listed in the datasheet for ordering.
www.infineon.com
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
144-Mbit QDR® II SRAM Two-Word
Burst Architecture
CY7C1625KV18/CY7C1612KV18/CY7C1614KV18, 144-Mbit QDR® II SRAM Two-Word Burst Architecture
Features
Configurations
Separate independent read and write data ports
❐ Supports concurrent transactions
CY7C1625KV18 – 16M × 9
■
360-MHz clock for high bandwidth
CY7C1614KV18 – 4M × 36
■
Two-word burst on all accesses
Functional Description
■
Double data rate (DDR) interfaces on both read and write ports
(data transferred at 720 MHz) at 360 MHz
■
Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■
Two input clocks for output data (C and C) to minimize clock
skew and flight time mismatches
■
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■
Single multiplexed address input bus latches address inputs
for both read and write ports
■
Separate port selects for depth expansion
■
Synchronous internally self-timed writes
■
Quad data rate (QDR®) II operates with 1.5-cycle read latency
when DOFF is asserted high
■
CY7C1612KV18 – 8M × 18
The CY7C1625KV18, CY7C1612KV18, and CY7C1614KV18
are 1.8 V synchronous pipelined SRAMs, equipped with QDR II
architecture. QDR II architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II architecture has separate data inputs and
data outputs to completely eliminate the need to ‘turn around’ the
data bus that exists with common I/O devices. Access to each
port is through a common address bus. Addresses for read and
write addresses are latched on alternate rising edges of the input
(K) clock. Accesses to the QDR II read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with two 9-bit
words (CY7C1625KV18), 18-bit words (CY7C1612KV18), or
36-bit words (CY7C1614KV18) that burst sequentially into or out
of the device. Because data can be transferred into and out of
the device on every rising edge of both input clocks (K and K and
C and C), memory bandwidth is maximized while simplifying
system design by eliminating bus turnarounds.
■
Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted low
■
Available in × 9, × 18, and × 36 configurations
■
Full data coherency, providing most current data
■
Core VDD = 1.8 V (± 0.1 V); I/O VDDQ = 1.4 V to VDD
❐ Supports both 1.5 V and 1.8 V I/O supply
■
Available in 165-ball fine-pitch ball grid array (FBGA) package
(15 × 17 × 1.4 mm)
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self-timed write circuitry.
■
Offered in both Pb-free and non Pb-free packages
For a complete list of related documentation, click here.
■
Variable drive high-speed transceiver logic (HSTL) output
buffers
■
JTAG 1149.1 compatible test access port
■
Phase Locked Loop (PLL) for accurate data placement
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
Selection Guide
Description
360 MHz
333 MHz
300 MHz
250 MHz
Unit
360
333
300
250
MHz
× 9 Not Offered
950
880
780
mA
× 18
970
910
800
1160
1080
950
Maximum operating frequency
Maximum operating current
1025
× 36 Not Offered
Cypress Semiconductor Corporation
Document Number: 001-16238 Rev. *P
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised May 4, 2020
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Logic Block Diagram – CY7C1625KV18
K
CLK
Gen.
DOFF
23
Address
Register
Read Add. Decode
K
Write
Reg
8M x 9 Array
Address
Register
Write
Reg
8M x 9 Array
A(22:0)
23
9
Write Add. Decode
D[8:0]
A(22:0)
RPS
Control
Logic
C
Read Data Reg.
C
CQ
18
VREF
WPS
BWS[0]
9
Control
Logic
Document Number: 001-16238 Rev. *P
9
Reg.
Reg.
Reg.
CQ
9
9
9
Q[8:0]
Page 2 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Logic Block Diagram – CY7C1612KV18
K
CLK
Gen.
DOFF
22
Address
Register
Read Add. Decode
K
Write
Reg
4M x 18 Array
Address
Register
Write
Reg
4M x 18 Array
A(21:0)
22
18
Write Add. Decode
D[17:0]
A(21:0)
RPS
Control
Logic
C
Read Data Reg.
C
CQ
36
VREF
WPS
BWS[1:0]
18
Control
Logic
18
Reg.
Reg. 18
Reg.
18
CQ
18
Q[17:0]
Logic Block Diagram – CY7C1614KV18
K
CLK
Gen.
DOFF
21
Address
Register
Read Add. Decode
K
Write
Reg
2M x 36 Array
Address
Register
Write
Reg
2M x 36 Array
A(20:0)
21
36
Write Add. Decode
D[35:0]
A(20:0)
RPS
Control
Logic
C
Read Data Reg.
C
CQ
72
VREF
WPS
BWS[3:0]
36
Control
Logic
Document Number: 001-16238 Rev. *P
36
Reg.
Reg. 36
Reg.
36
CQ
36
Q[35:0]
Page 3 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Contents
Pin Configurations ........................................................... 5
Pin Definitions .................................................................. 7
Functional Overview ........................................................ 9
Read Operations ......................................................... 9
Write Operations ......................................................... 9
Byte Write Operations ................................................. 9
Single Clock Mode ...................................................... 9
Concurrent Transactions ............................................. 9
Depth Expansion ......................................................... 9
Programmable Impedance .......................................... 9
Echo Clocks .............................................................. 10
PLL ............................................................................ 10
Application Example ...................................................... 10
Truth Table ...................................................................... 11
Write Cycle Descriptions ............................................... 11
Write Cycle Descriptions ............................................... 12
Write Cycle Descriptions ............................................... 12
IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 13
Disabling the JTAG Feature ...................................... 13
Test Access Port ....................................................... 13
Performing a TAP Reset ........................................... 13
TAP Registers ........................................................... 13
TAP Instruction Set ................................................... 13
TAP Controller State Diagram ....................................... 15
TAP Controller Block Diagram ...................................... 16
TAP Electrical Characteristics ...................................... 16
TAP AC Switching Characteristics ............................... 17
TAP Timing and Test Conditions .................................. 18
Identification Register Definitions ................................ 19
Scan Register Sizes ....................................................... 19
Document Number: 001-16238 Rev. *P
Instruction Codes ........................................................... 19
Boundary Scan Order .................................................... 20
Power Up Sequence in QDR II SRAM ........................... 21
Power Up Sequence ................................................. 21
PLL Constraints ......................................................... 21
Maximum Ratings ........................................................... 22
Operating Range ............................................................. 22
Neutron Soft Error Immunity ......................................... 22
Electrical Characteristics ............................................... 22
DC Electrical Characteristics ..................................... 22
AC Electrical Characteristics ..................................... 24
Capacitance .................................................................... 24
Thermal Resistance ........................................................ 24
AC Test Loads and Waveforms ..................................... 24
Switching Characteristics .............................................. 25
Switching Waveforms .................................................... 27
Ordering Information ...................................................... 28
Ordering Code Definitions ......................................... 28
Package Diagram ............................................................ 29
Acronyms ........................................................................ 30
Document Conventions ................................................. 30
Units of Measure ....................................................... 30
Document History Page ................................................. 31
Sales, Solutions, and Legal Information ...................... 33
Worldwide Sales and Design Support ....................... 33
Products .................................................................... 33
PSoC® Solutions ....................................................... 33
Cypress Developer Community ................................. 33
Technical Support ..................................................... 33
Page 4 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Pin Configurations
The pin configuration for CY7C1625KV18, CY7C1612KV18, and CY7C1614KV18 follow: [1]
Figure 1. 165-ball FBGA (15 × 17 × 1.4 mm) pinout
CY7C1625KV18 (16M × 9)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
A
A
WPS
NC
K
A
RPS
A
A
CQ
B
NC
NC
NC
A
NC/288M
K
BWS0
A
NC
NC
Q4
C
NC
NC
NC
VSS
A
A
A
VSS
NC
NC
D4
D
NC
D5
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
Q5
VDDQ
VSS
VSS
VSS
VDDQ
NC
D3
Q3
F
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
G
NC
D6
Q6
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q2
D2
K
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
L
NC
Q7
D7
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q1
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
NC
D1
N
NC
D8
NC
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
Q8
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Note
1. NC/288M is not connected to the die and can be tied to any voltage level.
Document Number: 001-16238 Rev. *P
Page 5 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Pin Configurations (continued)
The pin configuration for CY7C1625KV18, CY7C1612KV18, and CY7C1614KV18 follow: [1]
Figure 1. 165-ball FBGA (15 × 17 × 1.4 mm) pinout
CY7C1612KV18 (8M × 18)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
A
A
WPS
BWS1
K
NC/288M
RPS
A
A
CQ
B
NC
Q9
D9
A
NC
K
BWS0
A
NC
NC
Q8
C
NC
NC
D10
VSS
A
A
A
VSS
NC
Q7
D8
D
NC
D11
Q10
VSS
VSS
VSS
VSS
VSS
NC
NC
D7
E
NC
NC
Q11
VDDQ
VSS
VSS
VSS
VDDQ
NC
D6
Q6
F
NC
Q12
D12
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
Q5
G
NC
D13
Q13
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
D5
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
D14
VDDQ
VDD
VSS
VDD
VDDQ
NC
Q4
D4
K
NC
NC
Q14
VDDQ
VDD
VSS
VDD
VDDQ
NC
D3
Q3
L
NC
Q15
D15
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
Q2
M
NC
NC
D16
VSS
VSS
VSS
VSS
VSS
NC
Q1
D2
N
NC
D17
Q16
VSS
A
A
A
VSS
NC
NC
D1
P
NC
NC
Q17
A
A
C
A
A
NC
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
CY7C1614KV18 (4M × 36)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/288M
A
WPS
BWS2
K
BWS1
RPS
A
A
CQ
B
Q27
Q18
D18
A
BWS3
K
BWS0
A
D17
Q17
Q8
C
D27
Q28
D19
VSS
A
A
A
VSS
D16
Q7
D8
D
D28
D20
Q19
VSS
VSS
VSS
VSS
VSS
Q16
D15
D7
E
Q29
D29
Q20
VDDQ
VSS
VSS
VSS
VDDQ
Q15
D6
Q6
F
Q30
Q21
D21
VDDQ
VDD
VSS
VDD
VDDQ
D14
Q14
Q5
G
D30
D22
Q22
VDDQ
VDD
VSS
VDD
VDDQ
Q13
D13
D5
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
D31
Q31
D23
VDDQ
VDD
VSS
VDD
VDDQ
D12
Q4
D4
K
Q32
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
Q3
L
Q33
Q24
D24
VDDQ
VSS
VSS
VSS
VDDQ
D11
Q11
Q2
M
D33
Q34
D25
VSS
VSS
VSS
VSS
VSS
D10
Q1
D2
N
D34
D26
Q25
VSS
A
A
A
VSS
Q10
D9
D1
P
Q35
D35
Q26
A
A
C
A
A
Q9
D0
Q0
R
TDO
TCK
A
A
A
C
A
A
A
TMS
TDI
Document Number: 001-16238 Rev. *P
Page 6 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Pin Definitions
Pin Name
I/O
Pin Description
D[x:0]
InputData input signals. Sampled on the rising edge of K and K clocks during valid write operations.
Synchronous CY7C1625KV18 − D[8:0]
CY7C1612KV18 − D[17:0]
CY7C1614KV18 − D[35:0]
WPS
InputWrite port select − Active low. Sampled on the rising edge of the K clock. When asserted active, a
Synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0].
BWS0,
BWS1,
BWS2,
BWS3
InputByte write select (BWS) 0, 1, 2, and 3 − Active low. Sampled on the rising edge of the K and K clocks
Synchronous during write operations. Used to select which byte is written into the device during the current portion of
the write operations. Bytes not written remain unaltered.
CY7C1625KV18 − BWS0 controls D[8:0].
CY7C1612KV18 − BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C1614KV18 − BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3
controls D[35:27].
All the byte write selects are sampled on the same edge as the data. Deselecting a BWS ignores the
corresponding byte of data and it is not written into the device.
A
InputAddress inputs. Sampled on the rising edge of the K (read address) and K (write address) clocks during
Synchronous active read and write operations. These address inputs are multiplexed for both read and write
operations. Internally, the device is organized as 16M × 9 (two arrays each of 8M × 9) for
CY7C1625KV18, 8M × 18 (two arrays each of 4M × 18) for CY7C1612KV18, and 4M × 36 (two arrays
each of 2M × 36) for CY7C1614KV18. Therefore, only 23 address inputs are needed to access the entire
memory array of CY7C1625KV18, 22 address inputs for CY7C1612KV18, and 21 address inputs for
CY7C1614KV18. These inputs are ignored when the appropriate port is deselected.
Q[x:0]
OutputData output signals. These pins drive out the requested data during a read operation. Valid data is
Synchronous driven out on the rising edge of the C and C clocks during read operations, or K and K when in single
clock mode. When the read port is deselected, Q[x:0] are automatically tristated.
CY7C1625KV18 − Q[8:0]
CY7C1612KV18 − Q[17:0]
CY7C1614KV18 − Q[35:0]
RPS
InputRead port select − Active low. Sampled on the rising edge of positive input clock (K). When active, a
Synchronous read operation is initiated. Deasserting deselects the read port. When deselected, the pending access
is allowed to complete and the output drivers are automatically tristated following the next rising edge
of the C clock. Each read access consists of a burst of two sequential transfers.
C
Input Clock
Positive input clock for output data. C is used in conjunction with C to clock out the read data from
the device. Use C and C together to deskew the flight times of various devices on the board back to the
controller. See Application Example on page 10 for further details.
C
Input Clock
Negative input clock for output data. C is used in conjunction with C to clock out the read data from
the device. Use C and C together to deskew the flight times of various devices on the board back to the
controller. See Application Example on page 10 for further details.
K
Input Clock
Positive input clock input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising
edge of K.
K
Input Clock
Negative input clock input. K is used to capture synchronous inputs being presented to the device and
to drive out data through Q[x:0] when in single clock mode.
CQ
Echo Clock
CQ referenced with respect to C. This is a free-running clock and is synchronized to the input clock
for output data (C) of the QDR II. In single clock mode, CQ is generated with respect to K. The timing
for the echo clocks is shown in Switching Characteristics on page 25.
CQ
Echo Clock
CQ referenced with respect to C. This is a free-running clock and is synchronized to the input clock
for output data (C) of the QDR II. In single clock mode, CQ is generated with respect to K. The timing
for the echo clocks is shown in the Switching Characteristics on page 25.
Document Number: 001-16238 Rev. *P
Page 7 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Pin Definitions (continued)
Pin Name
I/O
Pin Description
ZQ
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 × RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, connect this pin directly to VDDQ, which enables the
minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
DOFF
Input
PLL turn off − Active low. Connecting this pin to ground turns off the PLL inside the device. The timing
in the operation with the PLL turned off differs from those listed in this data sheet. For normal operation,
connect this pin to a pull-up through a 10 KΩ or less pull-up resistor. The device behaves in QDR I mode
when the PLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz
with QDR I timing.
TDO
Output
TCK
Input
Test clock (TCK) pin for JTAG.
TDI
Input
Test data-in (TDI) pin for JTAG.
TMS
Input
Test mode select (TMS) pin for JTAG.
NC
N/A
Not connected to the die. Can be tied to any voltage level.
NC/288M
VREF
VDD
VSS
VDDQ
Input
InputReference
Test data-out (TDO) pin for JTAG.
Not connected to the die. Can be tied to any voltage level.
Reference voltage input. Static input used to set the reference level for HSTL inputs, outputs, and AC
measurement points.
Power Supply Power supply inputs to the core of the device.
Ground
Ground for the device.
Power Supply Power supply inputs for the outputs of the device.
Document Number: 001-16238 Rev. *P
Page 8 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Functional Overview
The CY7C1625KV18, CY7C1612KV18, and CY7C1614KV18
are synchronous pipelined burst SRAMs with a read port and a
write port. The read port is dedicated to read operations and the
write port is dedicated to write operations. Data flows into the
SRAM through the write port and flows out through the read port.
These devices multiplex the address inputs to minimize the
number of address pins required. By having separate read and
write ports, the QDR II completely eliminates the need to turn
around the data bus and avoids any possible data contention,
thereby simplifying system design. Each access consists of two
9-bit data transfers in the case of CY7C1625KV18, two 18-bit
data transfers in the case of CY7C1612KV18, and two 36-bit
data transfers in the case of CY7C1614KV18 in one clock cycle.
This device operates with a read latency of one and half cycles
when DOFF pin is tied high. When DOFF pin is set low or
connected to VSS then the device behaves in QDR I mode with
a read latency of one clock cycle.
Accesses for both ports are initiated on the rising edge of the
positive input clock (K). All synchronous input timing is
referenced from the rising edge of the input clocks (K and K) and
all output timing is referenced to the output clocks (C and C, or
K and K when in single clock mode).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the input clocks (K and K). All synchronous data
outputs (Q[x:0]) pass through output registers controlled by the
rising edge of the output clocks (C and C, or K and K when in
single clock mode).
All synchronous control (RPS, WPS, BWS[x:0]) inputs pass
through input registers controlled by the rising edge of the input
clocks (K and K).
CY7C1612KV18 is described in the following sections. The
same basic descriptions apply to CY7C1625KV18, and
CY7C1614KV18.
Read Operations
The CY7C1612KV18 is organized internally as two arrays of
4M × 18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
RPS active at the rising edge of the positive input clock (K). The
address is latched on the rising edge of the K clock. The address
presented to the address inputs is stored in the read address
register. Following the next K clock rise, the corresponding
lowest order 18-bit word of data is driven onto the Q[17:0] using
C as the output timing reference. On the subsequent rising edge
of C, the next 18-bit data word is driven onto the Q[17:0]. The
requested data is valid 0.45 ns from the rising edge of the output
clock (C and C or K and K when in single clock mode).
Synchronous internal circuitry automatically tristates the outputs
following the next rising edge of the output clocks (C/C). This
enables for a seamless transition between devices without the
insertion of wait states in a depth expanded memory.
Write Operations
Write operations are initiated by asserting WPS active at the
rising edge of the positive input clock (K). On the same K clock
rise the data presented to D[17:0] is latched and stored into the
Document Number: 001-16238 Rev. *P
lower 18-bit write data register, provided BWS[1:0] are both
asserted active. On the subsequent rising edge of the negative
input clock (K), the address is latched and the information
presented to D[17:0] is also stored into the write data register,
provided BWS[1:0] are both asserted active. The 36 bits of data
are then written into the memory array at the specified location.
When deselected, the write port ignores all inputs after the
pending write operations have been completed.
Byte Write Operations
Byte write operations are supported by the CY7C1612KV18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS0 and
BWS1, which are sampled with each set of 18-bit data words.
Asserting the appropriate Byte Write Select input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the Byte write select input during the
data portion of a write enables the data stored in the device for
that byte to remain unaltered. This feature can be used to
simplify read, modify, or write operations to a byte write
operation.
Single Clock Mode
In this mode the device recognizes only a single pair of input
clocks (K and K) that control both the input and output registers.
This operation is identical to the operation if the device had zero
skew between the K/K and C/C clocks. All timing parameters
remain the same in this mode. To use this mode of operation, the
user must tie C and C high at power on. This function is a strap
option and not alterable during device operation.
Concurrent Transactions
The read and write ports on the CY7C1612KV18 operate
completely independent of one another. As each port latches the
address inputs on different clock edges, the user can read or
write to any location, regardless of the transaction on the other
port. The user can start reads and writes in the same clock cycle.
If the ports access the same location at the same time, the SRAM
delivers the most recent information associated with the
specified address location. This includes forwarding data from a
write cycle that was initiated on the previous K clock rise.
Depth Expansion
The CY7C1612KV18 has a port select input for each port. This
enables for easy depth expansion. Both port selects are sampled
on the rising edge of the positive input clock only (K). Each port
select input can deselect the specified port. Deselecting a port
does not affect the other port. All pending transactions (read and
write) are completed before the device is deselected.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to enable the SRAM to adjust its output
driver impedance. The value of RQ must be 5 × the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175 Ω and 350 Ω, with VDDQ = 1.5 V. The
output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.
Page 9 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Echo Clocks
PLL
Echo clocks are provided on the QDR II to simplify data capture
on high-speed systems. Two echo clocks are generated by the
QDR II. CQ is referenced with respect to C and CQ is referenced
with respect to C. These are free-running clocks and are
synchronized to the output clock of the QDR II. In the single clock
mode, CQ is generated with respect to K and CQ is generated
with respect to K. The timing for the echo clocks is shown in
Switching Characteristics on page 25.
These chips use a PLL that is designed to function between
120 MHz and the specified maximum clock frequency. During
power up, when the DOFF is tied high, the PLL is locked after
20 μs of stable clock. The PLL can also be reset by slowing or
stopping the input clocks K and K for a minimum of 30 ns.
However, it is not necessary to reset the PLL to lock to the
desired frequency. The PLL automatically locks 20 μs after a
stable clock is presented. The PLL may be disabled by applying
ground to the DOFF pin. When the PLL is turned off, the device
behaves in QDR I mode (with one cycle latency and a longer
access time).
Application Example
Figure 2 shows two QDR II used in an application.
Figure 2. Application Example (Width Expansion)
SRAM#1
ZQ
CQ/CQ
D[x:0]
Q[x:0]
A RPS WPS BWS C C K K
RQ
SRAM#2
ZQ
CQ/CQ
D[x:0]
Q[x:0]
A RPS WPS BWS C C K K
RQ
DATA IN[2x:0]
DATA OUT [2x:0]
ADDRESS
RPS
WPS
BWS
CLKIN1/CLKIN1
CLKIN2/CLKIN2
SOURCE K
SOURCE K
DELAYED K
DELAYED K
FPGA / ASIC
Document Number: 001-16238 Rev. *P
Page 10 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Truth Table
The truth table for CY7C1625KV18, CY7C1612KV18, and CY7C1614KV18 follow. [2, 3, 4, 5, 6, 7]
Operation
K
RPS WPS
DQ
DQ
Write cycle:
Load address on the rising edge of K;
input write data on K and K rising edges.
L–H
X
L
D(A + 0) at K(t) ↑
Read cycle:
Load address on the rising edge of K;
wait one and a half cycle; read data on C and C rising edges.
L–H
L
X
Q(A + 0) at C(t + 1) ↑ Q(A + 1) at C(t + 2) ↑
NOP: No operation
L–H
H
H
D=X
Q = High Z
D=X
Q = High Z
Stopped
X
X
Previous state
Previous state
Standby: Clock stopped
D(A + 1) at K(t) ↑
Write Cycle Descriptions
The write cycle description table for CY7C1612KV18 follow. [2, 8]
BWS0
BWS1
K
K
L
L
L–H
–
L
L
–
L
H
L–H
L
H
–
H
L
L–H
H
L
–
H
H
L–H
H
H
–
Comments
During the data portion of a write sequence:
CY7C1612KV18 − both bytes (D[17:0]) are written into the device.
L–H During the data portion of a write sequence:
CY7C1612KV18 − both bytes (D[17:0]) are written into the device.
–
During the data portion of a write sequence:
CY7C1612KV18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L–H During the data portion of a write sequence:
CY7C1612KV18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
–
During the data portion of a write sequence:
CY7C1612KV18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
L–H During the data portion of a write sequence:
CY7C1612KV18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
–
No data is written into the devices during this portion of a write operation.
L–H No data is written into the devices during this portion of a write operation.
Notes
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, ↑represents rising edge.
3. Device powers up deselected with the outputs in a tristate condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 0, A + 1 represents the internal address sequence in the burst.
5. “t” represents the cycle at which a Read/Write operation is started. t + 1, and t + 2 are the first, and second clock cycles respectively succeeding the “t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. Ensure that when clock is stopped K = K and C = C = high. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.
8. Is based on a write cycle that was initiated in accordance with the Truth Table. BWS0, BWS1, BWS2 ,and BWS3 can be altered on different portions of a write cycle, as
long as the setup and hold requirements are achieved.
Document Number: 001-16238 Rev. *P
Page 11 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Write Cycle Descriptions
The write cycle description table for CY7C1625KV18 follow. [9, 10]
BWS0
K
K
L
L–H
–
L
–
H
L–H
H
–
Comments
During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
L–H During the data portion of a write sequence, the single byte (D[8:0]) is written into the device.
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Write Cycle Descriptions
The write cycle description table for CY7C1614KV18 follow. [9, 10]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L–H
–
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
–
L
H
H
H
L–H
L
H
H
H
–
H
L
H
H
L–H
H
L
H
H
–
H
H
L
H
L–H
H
H
L
H
–
H
H
H
L
L–H
H
H
H
L
–
H
H
H
H
L–H
H
H
H
H
–
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
–
During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[17:9]) is written into the
device. D[8:0] and D[35:18] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into the
device. D[8:0] and D[35:18] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Notes
9. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, ↑represents rising edge.
10. Is based on a write cycle that was initiated in accordance with the Truth Table on page 11. BWS0, BWS1, BWS2 ,and BWS3 can be altered on different portions of a
write cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-16238 Rev. *P
Page 12 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8 V I/O logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied low
(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternatively be connected to VDD through a pull-up resistor. TDO
must be left unconnected. Upon power up, the device comes up
in a reset state, which does not interfere with the operation of the
device.
Test Access Port
Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a Logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information about
loading the instruction register, see the TAP Controller State
Diagram on page 15. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 19).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS high (VDD) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a High Z state.
TAP Registers
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Document Number: 001-16238 Rev. *P
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in TAP Controller Block Diagram on
page 16. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set low (VSS) when the
BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.
The Boundary Scan Order on page 20 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 19.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
Codes on page 19. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in this section in detail.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Page 13 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
IDCODE
BYPASS
The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power up or whenever the TAP controller is supplied a
Test-Logic-Reset state.
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
SAMPLE Z
The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a High Z state until the next command is supplied during the
Update IR state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.
Note that the TAP controller clock can only operate at a
frequency up to 20 MHz, while the SRAM clock operates more
than an order of magnitude faster. Because there is a large
difference in the clock frequencies, it is possible that during the
Capture-DR state, an input or output undergoes a transition. The
TAP may then try to capture a signal while in transition
(metastable state). This does not harm the device, but there is
no guarantee as to the value that is captured. Repeatable results
may not be possible.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
EXTEST
The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.
EXTEST OUTPUT BUS TRISTATE
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tristate mode.
The boundary scan register has a special bit located at bit #108.
When this scan cell, called the “extest output bus tristate,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When high, it enables the output buffers to drive the
output bus. When low, this bit places the output bus into a High Z
condition.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that cell,
during the Shift-DR state. During Update-DR, the value loaded
into that shift-register cell latches into the preload register. When
the EXTEST instruction is entered, this bit directly controls the
output Q-bus pins. Note that this bit is pre-set low to enable the
output when the device is powered up, and also when the TAP
controller is in the Test-Logic-Reset state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.
Document Number: 001-16238 Rev. *P
Page 14 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
TAP Controller State Diagram
The state diagram for the TAP controller follows. [11]
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
SELECT
DR-SCAN
1
1
SELECT
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
SHIFT-DR
0
SHIFT-IR
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-IR
1
0
1
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-IR
UPDATE-DR
1
1
0
PAUSE-DR
0
0
0
1
0
Note
11. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document Number: 001-16238 Rev. *P
Page 15 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
TAP Controller Block Diagram
0
Bypass Register
2
Selection
Circuitry
TDI
1
0
Selection
Circuitry
Instruction Register
31
30
29
.
.
2
1
0
1
0
TDO
Identification Register
108
.
.
.
.
2
Boundary Scan Register
TCK
TAP Controller
TMS
TAP Electrical Characteristics
Over the Operating Range
Parameter [12, 13, 14]
Description
Test Conditions
Min
Max
Unit
VOH1
Output high voltage
IOH = −2.0 mA
1.4
–
V
VOH2
Output high voltage
IOH = −100 μA
1.6
–
V
VOL1
Output low voltage
IOL = 2.0 mA
–
0.4
V
VOL2
Output low voltage
IOL = 100 μA
–
0.2
V
VIH
Input high voltage
–
VIL
Input low voltage
–
IX
Input and output load current
GND ≤ VI ≤ VDD
0.65 × VDD VDD + 0.3
V
–0.3
0.35 × VDD
V
–5
5
μA
Notes
12. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics on page 22.
13. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > −1.5 V (Pulse width less than tCYC/2).
14. All voltage referenced to ground.
Document Number: 001-16238 Rev. *P
Page 16 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
TAP AC Switching Characteristics
Over the Operating Range
Parameter [15, 16]
Description
Min
Max
Unit
50
–
ns
tTCYC
TCK clock cycle time
tTF
TCK clock frequency
–
20
MHz
tTH
TCK clock high
20
–
ns
tTL
TCK clock low
20
–
ns
tTMSS
TMS setup to TCK clock rise
5
–
ns
tTDIS
TDI setup to TCK clock rise
5
–
ns
tCS
Capture setup to TCK rise
5
–
ns
Setup Times
Hold Times
tTMSH
TMS hold after TCK clock rise
5
–
ns
tTDIH
TDI hold after clock rise
5
–
ns
tCH
Capture hold after clock rise
5
–
ns
tTDOV
TCK clock low to TDO valid
–
10
ns
tTDOX
TCK clock low to TDO invalid
0
–
ns
Output Times
Notes
15. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
16. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.
Document Number: 001-16238 Rev. *P
Page 17 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
TAP Timing and Test Conditions
Figure 3 shows the TAP timing and test conditions. [17]
Figure 3. TAP Timing and Test Conditions
0.9 V
All Input Pulses
1.8 V
0.9 V
50 Ω
TDO
0V
Z0 = 50 Ω
(a)
CL = 20 pF
tTH
GND
tTL
Test Clock
TCK
tTMSH
tTMSS
tTCYC
Test Mode Select
TMS
tTDIS
tTDIH
Test Data In
TDI
Test Data Out
TDO
tTDOV
tTDOX
Note
17. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.
Document Number: 001-16238 Rev. *P
Page 18 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Identification Register Definitions
Value
Instruction Field
CY7C1625KV18
Revision Number (31:29)
CY7C1612KV18
CY7C1614KV18
Description
000
000
000
Cypress Device ID (28:12)
11010011010001011
11010011010010011
11010011010100011
Version number.
Cypress JEDEC ID (11:1)
00000110100
00000110100
00000110100
Allows unique
identification of SRAM
vendor.
ID Register Presence (0)
1
1
1
Indicates the presence
of an ID register.
Defines the type of
SRAM.
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary Scan
109
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a High Z state.
RESERVED
011
Do not use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Does not affect the SRAM operation.
RESERVED
101
Do not use: This instruction is reserved for future use.
RESERVED
110
Do not use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Document Number: 001-16238 Rev. *P
Page 19 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
28
10G
56
6A
84
1J
1
6P
29
9G
57
5B
85
2J
2
6N
30
11F
58
5A
86
3K
3
7P
31
11G
59
4A
87
3J
4
7N
32
9F
60
5C
88
2K
5
7R
33
10F
61
4B
89
1K
6
8R
34
11E
62
3A
90
2L
7
8P
35
10E
63
2A
91
3L
8
9R
36
10D
64
1A
92
1M
9
11P
37
9E
65
2B
93
1L
10
10P
38
10C
66
3B
94
3N
11
10N
39
11D
67
1C
95
3M
12
9P
40
9C
68
1B
96
1N
13
10M
41
9D
69
3D
97
2M
14
11N
42
11B
70
3C
98
3P
15
9M
43
11C
71
1D
99
2N
16
9N
44
9B
72
2C
100
2P
17
11L
45
10B
73
3E
101
1P
18
11M
46
11A
74
2D
102
3R
19
9L
47
10A
75
2E
103
4R
20
10L
48
9A
76
1E
104
4P
21
11K
49
8B
77
2F
105
5P
22
10K
50
7C
78
3F
106
5N
23
9J
51
6C
79
1G
107
5R
24
9K
52
8A
80
1F
108
Internal
25
10J
53
7A
81
3G
26
11J
54
7B
82
2G
27
11H
55
6B
83
1H
Document Number: 001-16238 Rev. *P
Page 20 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Power Up Sequence in QDR II SRAM
PLL Constraints
QDR II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
■
PLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var.
■
The PLL functions at frequencies down to 120 MHz.
■
If the input clock is unstable and the PLL is enabled, then the
PLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide 20 μs of stable clock to
relock to the desired clock frequency.
Power Up Sequence
■
Apply power and drive DOFF either high or low (all other inputs
can be high or low).
❐ Apply VDD before VDDQ.
❐ Apply VDDQ before VREF or at the same time as VREF.
❐ Drive DOFF high.
■
Provide stable DOFF (high), power and clock (K, K) for 20 μs
to lock the PLL
~
~
Figure 4. Power Up Waveforms
K
K
~
~
Unstable Clock
> 20μs Stable clock
Start Normal
Operation
Clock Start (Clock Starts after V DD / V DDQ Stable)
VDD / VDDQ
DOFF
Document Number: 001-16238 Rev. *P
V DD / V DDQ Stable (< +/- 0.1V DC per 50ns )
Fix HIGH (or tie to VDDQ)
Page 21 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Maximum Ratings
Operating Range
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Range
Ambient
Temperature (TA)
VDD [19]
VDDQ [19]
0 °C to +70 °C
1.8 ± 0.1 V
1.4 V to
VDD
Storage temperature ................................ –65 °C to +150 °C
Commercial
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Industrial
Supply voltage on VDD relative to GND .......–0.5 V to +2.9 V
Neutron Soft Error Immunity
Supply voltage on VDDQ relative to GND ..... –0.5 V to + VDD
DC applied to outputs in High Z ........ –0.5 V to VDDQ + 0.5 V
DC input voltage
[18]
........................... –0.5 V to VDD + 0.5 V
Current into outputs (low) ........................................... 20 mA
Static discharge voltage
(MIL-STD-883, M. 3015) ......................................... > 2001 V
Parameter
-40 °C to +85 °C
Description
Test
Conditions Typ
Max*
Unit
LSBU
Logical
single-bit
upsets
25 °C
197
216
FIT/
Mb
LMBU
Logical
multi-bit
upsets
25 °C
0
0.01
FIT/
Mb
Single event
latch up
85 °C
0
0.1
FIT/
Dev
Latch up current ..................................................... > 200 mA
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical χ2, 95% confidence limit calculation. For more details refer to Application
Note Accelerated Neutron SER Testing and Calculation of Terrestrial Failure
Rates – AN54908.
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Over the Operating Range
Parameter [20]
Description
Test Conditions
Min
Typ
Max
Unit
1.7
1.8
1.9
V
VDD
Power supply voltage
VDDQ
I/O supply voltage
1.4
1.5
VDD
V
VOH
Output high voltage
Note 21
VDDQ/2 – 0.12
–
VDDQ/2 + 0.12
V
VOL
Output low voltage
Note 22
VDDQ/2 – 0.12
–
VDDQ/2 + 0.12
V
VOH(LOW)
Output high voltage
IOH = −0.1 mA, Nominal impedance
VDDQ – 0.2
–
VDDQ
V
VOL(LOW)
Output low voltage
IOL = 0.1 mA, Nominal impedance
VSS
–
0.2
V
VIH
Input high voltage
VREF + 0.1
–
VDDQ + 0.3
V
VIL
Input low voltage
–0.3
–
VREF – 0.1
V
IX
Input leakage current
GND ≤ VI ≤ VDDQ
−5
–
5
μA
IOZ
Output leakage current
GND ≤ VI ≤ VDDQ, Output disabled
VREF
Input reference voltage [23] Typical value = 0.75 V
−5
–
5
μA
0.68
0.75
0.95
V
Notes
18. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > −1.5 V (Pulse width less than tCYC/2).
19. Power up: Assumes a linear ramp from 0 V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
20. All voltage referenced to ground.
21. Output are impedance controlled. IOH = −(VDDQ/2)/(RQ/5) for values of 175 Ω < RQ < 350 Ω.
22. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 Ω < RQ < 350 Ω.
23. VREF(min) = 0.68 V or 0.46 VVDDQ, whichever is larger, VREF(max) = 0.95 V or 0.54 VDDQ, whichever is smaller.
Document Number: 001-16238 Rev. *P
Page 22 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Electrical Characteristics (continued)
Over the Operating Range
DC Electrical Characteristics (continued)
Over the Operating Range
Parameter [20]
IDD
[24]
ISB1
Description
VDD operating supply
Automatic power down
current
Test Conditions
Min
Typ
Max
Unit
VDD = Max, IOUT = 0 mA, 360 MHz (× 18)
f = fMAX = 1/tCYC
333 MHz (× 9)
–
–
1025
mA
–
–
950
mA
(× 18)
–
–
970
(× 36)
–
–
1160
300 MHz (× 9)
–
–
880
(× 18)
–
–
910
(× 36)
–
–
1080
250 MHz (× 9)
–
–
780
(× 18)
–
–
800
mA
mA
(× 36)
–
–
950
Max VDD,
360 MHz (× 18)
Both Ports Deselected,
333 MHz (× 9)
VIN ≥ VIH or VIN ≤ VIL
(× 18)
f = fMAX = 1/tCYC,
Inputs Static
(× 36)
–
–
425
mA
–
–
410
mA
–
–
410
–
–
410
300 MHz (× 9)
–
–
390
(× 18)
–
–
390
(× 36)
–
–
390
250 MHz (× 9)
–
–
370
(× 18)
–
–
370
(× 36)
–
–
370
mA
mA
Note
24. The operation current is calculated with 50% read cycle and 50% write cycle.
Document Number: 001-16238 Rev. *P
Page 23 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
AC Electrical Characteristics
Over the Operating Range
Parameter [25]
Min
Typ
Max
Unit
VIH
Input high voltage
Description
Test Conditions
VREF + 0.2
–
–
V
VIL
Input low voltage
–
–
VREF – 0.2
V
Max
Unit
4
pF
4
pF
Capacitance
Parameter [26]
Description
CIN
Input capacitance
CO
Output capacitance
Test Conditions
TA = 25 °C, f = 1 MHz, VDD = 1.8 V, VDDQ = 1.5 V.
Thermal Resistance
Parameter [26]
ΘJA (0 m/s)
ΘJA (1 m/s)
Description
165-ball FBGA Unit
Package
Test Conditions
Thermal resistance
(junction to ambient)
Socketed on a 170 × 220 × 2.35 mm, eight-layer printed circuit
board
ΘJA (3 m/s)
12.23
°C/W
11.17
°C/W
10.42
°C/W
ΘJB
Thermal resistance
(junction to board)
9.34
°C/W
ΘJC
Thermal resistance
(junction to case)
2.10
°C/W
AC Test Loads and Waveforms
Figure 5. AC Test Loads and Waveforms
VREF = 0.75 V
VREF
0.75 V
VREF
OUTPUT
DEVICE
UNDER
TEST
ZQ
Z0 = 50 Ω
RL = 50 Ω
VREF = 0.75 V
RQ =
250 Ω
(a)
0.75 V
R = 50 Ω
OUTPUT
DEVICE
UNDER
TEST ZQ
INCLUDING
JIG AND
SCOPE
5 pF
ALL INPUT PULSES
1.25 V
0.75 V
[27]
0.25 V
SLEW RATE= 2 V/ns
RQ =
250 Ω
(b)
Notes
25. Overshoot: VIH(AC) < VDDQ + 0.85 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > −1.5 V (Pulse width less than tCYC/2).
26. Tested initially and after any design or process change that may affect these parameters.
27. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 Ω, VDDQ = 1.5 V, input
pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 5.
Document Number: 001-16238 Rev. *P
Page 24 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Switching Characteristics
Over the Operating Range
Parameters [28, 29]
Cypress Consortium
Parameter Parameter
360 MHz
Description
VDD(typical) to the first access [30]
tPOWER
333 MHz
300 MHz
250 MHz
Unit
Min
Max
Min
Max
Min
Max
Min
Max
1
–
1
–
1
–
1
–
ms
tCYC
tKHKH
K clock and C clock cycle time
2.8
8.4
3.0
8.4
3.3
8.4
4.0
8.4
ns
tKH
tKHKL
Input clock (K/K; C/C) high
1.12
–
1.20
–
1.32
–
1.6
–
ns
tKL
tKLKH
Input clock (K/K; C/C) low
1.12
–
1.20
–
1.32
–
1.6
–
ns
tKHKH
tKHKH
K clock rise to K clock rise and C
to C rise (rising edge to rising
edge)
1.26
–
1.35
–
1.49
–
1.8
–
ns
tKHCH
tKHCH
K/K clock rise to C/C clock rise
(rising edge to rising edge)
0
1.2
0
1.30
0
1.45
0
1.8
ns
Setup Times
tSA
tAVKH
Address setup to K clock rise
0.28
–
0.3
–
0.3
–
0.35
–
ns
tSC
tIVKH
Control setup to K clock rise
(RPS, WPS)
0.28
–
0.3
–
0.3
–
0.35
–
ns
tSCDDR
tIVKH
DDR control setup to clock (K/K)
rise (BWS0, BWS1, BWS2,
BWS3)
0.28
–
0.3
–
0.3
–
0.35
–
ns
tSD
tDVKH
D[X:0] setup to clock (K/K) rise
0.28
–
0.3
–
0.3
–
0.35
–
ns
tHA
tKHAX
Address hold after K clock rise
0.28
–
0.3
–
0.3
–
0.35
–
ns
tHC
tKHIX
Control hold after K clock rise
(RPS, WPS)
0.28
–
0.3
–
0.3
–
0.35
–
ns
tHCDDR
tKHIX
DDR control hold after clock (K/K)
Rise (BWS0, BWS1, BWS2,
BWS3)
0.28
–
0.3
–
0.3
–
0.35
–
ns
tHD
tKHDX
D[X:0] hold after clock (K/K) rise
0.28
–
0.3
–
0.3
–
0.35
–
ns
Hold Times
Notes
28. Unless otherwise noted, test conditions are based on signal transition time of 2 V/ns, timing reference levels of 0.75 V, Vref = 0.75 V, RQ = 250 Ω, VDDQ = 1.5 V, input
pulse levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 5 on page 24.
29. When a part with a maximum frequency above 167 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being
operated and outputs data with the output timings of that frequency range.
30. This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD minimum initially before initiating a read or write operation.
Document Number: 001-16238 Rev. *P
Page 25 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Switching Characteristics (continued)
Over the Operating Range
Parameters [28, 29]
Cypress Consortium
Parameter Parameter
360 MHz
Description
333 MHz
300 MHz
250 MHz
Unit
Min
Max
Min
Max
Min
Max
Min
Max
–
0.45
–
0.45
–
0.45
–
0.45
ns
–
–0.45
–
–0.45
–
–0.45
–
ns
–
0.45
–
0.45
–
0.45
–
0.45
ns
–0.45
–
–0.45
–
–0.45
–
–0.45
–
ns
–
0.25
–
0.25
–
0.27
–
0.30
ns
Output Times
tCO
tCHQV
C/C clock rise (or K/K in single
clock mode) to data valid
tDOH
tCHQX
Data output hold after output C/C –0.45
clock rise (active to active)
tCCQO
tCHCQV
C/C clock rise to echo clock valid
tCQOH
tCHCQX
Echo clock hold after C/C clock
rise
tCQD
tCQHQV
Echo clock high to data valid
tCQDOH
tCQHQX
Echo clock high to data invalid
-0.25
–
–0.25
–
–0.27
–
–0.30
–
ns
[31]
1.15
–
1.25
–
1.40
–
1.75
–
ns
1.15
–
1.25
–
1.40
–
1.75
–
ns
–
0.45
–
0.45
–
0.45
–
0.45
ns
–0.45
–
–0.45
–
–0.45
–
–0.45
–
ns
tCQH
tCQHCQL
Output clock (CQ/CQ) high
tCQHCQH
tCQHCQH
CQ clock rise to CQ clock rise
(rising edge to rising edge) [31]
tCHZ
tCHQZ
Clock (C/C) rise to High Z
(Active to High Z) [32, 33]
tCLZ
tCHQX1
Clock (C/C) rise to Low Z [32, 33]
tKC Var
tKC Var
Clock phase jitter
–
0.20
–
0.20
–
0.20
–
0.20
ns
tKC lock
tKC lock
PLL lock time (K, C)
20
–
20
–
20
–
20
–
μs
tKC Reset
tKC Reset
K static to PLL reset
30
–
30
–
30
–
30
–
ns
PLL Timing
Notes
31. These parameters are extrapolated from the input timing parameters (tCYC/2 – 250 ps, where 250 ps is the internal jitter). These parameters are only guaranteed by
design and are not tested in production.
32. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in part (b) of Figure 5 on page 24. Transition is measured ± 100 mV from steady state voltage.
33. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.
Document Number: 001-16238 Rev. *P
Page 26 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Switching Waveforms
Figure 6. Read/Write/Deselect Sequence [34, 35, 36]
READ
WRITE
READ
WRITE
READ
WRITE
NOP
WRITE
NOP
1
2
3
4
5
6
7
8
9
10
K
tKH
tKL
tKHKH
tCYC
K
RPS
tSC
t HC
WPS
A
D
A1
A2
tSA tHA
tSA tHA
D11
D30
A0
D10
A3
A4
A5
D31
D50
D51
tSD
Q00
t CLZ
C
tKL
tKH
tKHCH
D60
D61
tSD tHD
tHD
Q
tKHCH
A6
Q01
tDOH
tCO
Q20
Q21
Q41
Q40
tCQDOH
t CHZ
tCQD
t CYC
tKHKH
C
tCQOH
tCCQO
CQ
tCQOH
tCCQO
tCQH
tCQHCQH
CQ
DON’T CARE
UNDEFINED
Notes
34. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0 + 1.
35. Outputs are disabled (High Z) one clock cycle after a NOP.
36. In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram.
Document Number: 001-16238 Rev. *P
Page 27 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Ordering Information
The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local
sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at
http://www.cypress.com/products
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office
closest to you, visit us at http://www.cypress.com/go/datasheet/offices.
Speed
(MHz)
250
Ordering Code
CY7C1625KV18-250BZXC
Package
Diagram
Package Type
51-85195 165-ball FBGA (15 × 17 × 1.4 mm) Pb-free
Operating
Range
Commercial
CY7C1612KV18-250BZXC
CY7C1625KV18-250BZXI
Industrial
CY7C1612KV18-250BZXI
CY7C1614KV18-250BZI
165-ball FBGA (15 × 17 × 1.4 mm)
300
CY7C1612KV18-300BZXI
51-85195 165-ball FBGA (15 × 17 × 1.4 mm) Pb-free
Industrial
333
CY7C1625KV18-333BZXC
51-85195 165-ball FBGA (15 × 17 × 1.4 mm) Pb-free
Commercial
CY7C1612KV18-333BZXC
CY7C1614KV18-333BZC
165-ball FBGA (15 × 17 × 1.4 mm)
CY7C1612KV18-333BZC
360
CY7C1612KV18-360BZXC
51-85195 165-ball FBGA (15 × 17 × 1.4 mm) Pb-free
Commercial
Ordering Code Definitions
CY
7
C 16XX K V18 - XXX BZ
X
X
Temperature Grade: X = C or I
C = Commercial; I = Industrial
Pb-free
Package Type: BZ = 165-ball FBGA
Frequency Range: XXX = 250 or 300 or 333 or 360 MHz
V18 = 1.8 V
Die Revision
Part Identifier: 16XX = 1625 or 1612 or 1614
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 001-16238 Rev. *P
Page 28 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Package Diagram
Figure 7. 165-ball FBGA (15 × 17 × 1.40 mm (0.50 Ball Diameter)) Package Outline, 51-85195
51-85195 *E
Document Number: 001-16238 Rev. *P
Page 29 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Acronyms
Acronym
Document Conventions
Description
Units of Measure
BWS
Byte Write Select
DDR
Double Data Rate
°C
degree Celsius
DLL
Delay Lock Loop
FIT/Dev
failure in time per device
FBGA
Fine-Pitch Ball Grid Array
FIT/Mb
failure in time per mega bit
HSTL
High-Speed Transceiver Logic
µA
microampere
I/O
Input/Output
µs
microsecond
JTAG
Joint Test Action Group
MHz
megahertz
LSB
Least Significant Bit
mA
milliampere
LSBU
Logical Single-Bit Upsets
ms
millisecond
LMBU
Logical Multi-Bit Upsets
mm
millimeter
MSB
Most Significant Bit
ns
nanosecond
PLL
Phase Locked Loop
Ω
ohm
pF
picofarad
QDR
Quad Data Rate
V
volt
SEL
Single Event Latch-up
W
watt
SRAM
Static Random Access Memory
TAP
Test Access Port
TCK
Test Clock
TDI
Test Data-In
TDO
Test Data-Out
TMS
Test Mode Select
Document Number: 001-16238 Rev. *P
Symbol
Unit of Measure
Page 30 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Document History Page
Document Title: CY7C1625KV18/CY7C1612KV18/CY7C1614KV18, 144-Mbit QDR® II SRAM Two-Word Burst Architecture
Document Number: 001-16238
Rev.
ECN No.
Submission
Date
**
1184523
06/25/2007
New data sheet.
*A
2041828
01/30/2008
Changed status from Advance Information to Preliminary.
*B
2555945
08/22/2008
Updated Identification Register Definitions (Changed Revision Number [31:29] from 001 to
000).
Updated Power Up Sequence in QDR II SRAM (Updated description; and Power up
waveforms (Figure 4)).
Updated Maximum Ratings (Changed Ambient Temperature with Power Applied from “–10
°C to +85 °C” to “–55 °C to +125 °C”).
Updated Electrical Characteristics (Updated the maximum value of IDD and ISB1 parameters).
Updated Thermal Resistance (Included values for 165-ball FBGA package).
*C
2806011
11/12/2009
Added Neutron Soft Error Immunity.
Updated Capacitance (Changed maximum value of Input Capacitance (CIN) from 2 pF to 4
pF; changed maximum value of Output Capacitance (CO) from 3 pF to 4 pF).
Updated Ordering Information (Updated part numbers; and added disclaimer at the top of
table).
Updated Package Diagram:
spec 51-85195 – Changed revision from *A to *B.
*D
2884892
02/26/2010
Updated Switching Characteristics (Changed minimum value of tSA and tSC parameters from
0.7 ns to 0.5 ns for 167 MHz, from 0.6 ns to 0.4 ns for 200 MHz, from 0.5 ns to 0.35 ns for
250 MHz, and from 0.4 ns to 0.3 ns for 333 MHz and 300 MHz).
*E
3022441
09/03/2010
Changed status from Preliminary to Final.
Updated Ordering Information:
Updated part numbers.
Added Ordering Code Definitions.
Added Acronyms and Units of Measure.
Updated to new template.
*F
3239743
04/25/2011
Updated Ordering Information (Updated part numbers).
Updated to new template.
Description of Change
*G
3275033
06/06/2011
No technical updates.
*H
3430142
12/06/2011
Updated Ordering Information (Updated part numbers).
Updated Package Diagram:
spec 51-85195 – Changed revision from *B to *C.
Completing Sunset Review.
*I
3487788
03/08/2012
Updated Configurations (Removed CY7C1610KV18 related information).
Updated Functional Description (Removed CY7C1610KV18 related information).
Updated Selection Guide (Removed 167 MHz and 200 MHz related information).
Removed Logic Block Diagram – CY7C1610KV18.
Updated Pin Configurations (Removed CY7C1610KV18 related information).
Updated Pin Definitions (Removed CY7C1610KV18 related information).
*I (cont.)
3487788
03/08/2012
Updated Functional Overview (Removed CY7C1610KV18 related information).
Updated Truth Table (Removed CY7C1610KV18 related information).
Updated Write Cycle Descriptions (Removed CY7C1610KV18 related information).
Updated Identification Register Definitions (Removed CY7C1610KV18 related information).
Updated Electrical Characteristics (Updated DC Electrical Characteristics (Removed 167
MHz and 200 MHz related information)).
Updated Switching Characteristics (Removed 167 MHz and 200 MHz related information).
Updated Ordering Information (Updated part numbers).
*J
3564310
03/28/2012
Updated Ordering Information (Updated part numbers).
Document Number: 001-16238 Rev. *P
Page 31 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Document History Page (continued)
Document Title: CY7C1625KV18/CY7C1612KV18/CY7C1614KV18, 144-Mbit QDR® II SRAM Two-Word Burst Architecture
Document Number: 001-16238
Rev.
ECN No.
Submission
Date
*K
3800190
11/01/2012
No technical updates.
Completing Sunset Review.
*L
4330440
04/03/2014
Updated Features:
Included 360 MHz related information.
Updated Selection Guide:
Included 360 MHz related information.
Updated Application Example:
Updated Figure 2.
Updated Electrical Characteristics:
Updated DC Electrical Characteristics:
Included 360 MHz related information.
Updated Thermal Resistance:
Updated values of ΘJA and ΘJC parameters.
Added ΘJB parameter and its details.
Updated Switching Characteristics:
Included 360 MHz related information.
Updated Ordering Information (Updated part numbers).
Updated to new template.
*M
4575228
11/20/2014
Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
Completing Sunset Review.
*N
5071078
01/04/2016
Updated Package Diagram:
spec 51-85195 – Changed revision from *C to *D.
Updated to new template.
Completing Sunset Review.
*O
6067875
02/12/2018
Updated Ordering Information:
Updated part numbers.
Updated to new template.
Completing Sunset Review.
*P
6876128
05/04/2020
Updated Package Diagram:
spec 51-85195 – Changed revision from *D to *E.
Document Number: 001-16238 Rev. *P
Description of Change
Page 32 of 33
CY7C1625KV18
CY7C1612KV18
CY7C1614KV18
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC® Solutions
Products
Arm® Cortex® Microcontrollers
Automotive
cypress.com/arm
cypress.com/automotive
Clocks & Buffers
Interface
cypress.com/clocks
cypress.com/interface
Internet of Things
Memory
cypress.com/iot
cypress.com/memory
Microcontrollers
cypress.com/mcu
PSoC
cypress.com/psoc
Power Management ICs
Cypress Developer Community
Community | Code Examples | Projects | Video | Blogs |
Training | Components
Technical Support
cypress.com/support
cypress.com/pmic
Touch Sensing
cypress.com/touch
USB Controllers
Wireless Connectivity
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6 MCU
cypress.com/usb
cypress.com/wireless
© Cypress Semiconductor Corporation, 2007-2020. This document is the property of Cypress Semiconductor Corporation and its subsidiaries (“Cypress”). This document, including any software or
firmware included or referenced in this document (“Software”), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries worldwide. Cypress reserves
all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other intellectual property rights. If
the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress hereby grants you a personal,
non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code form, to modify and reproduce the Software
solely for use with Cypress hardware products, only internally within your organization, and (b) to distribute the Software in binary code form externally to end users (either directly or indirectly through
resellers and distributors), solely for use on Cypress hardware product units, and (2) under those claims of Cypress's patents that are infringed by the Software (as provided by Cypress, unmodified)
to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification, translation, or compilation of the Software is prohibited.
TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
OR ACCOMPANYING HARDWARE, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. No computing
device can be absolutely secure. Therefore, despite security measures implemented in Cypress hardware or software products, Cypress shall have no liability arising out of any security breach, such
as unauthorized access to or use of a Cypress product. CYPRESS DOES NOT REPRESENT, WARRANT, OR GUARANTEE THAT CYPRESS PRODUCTS, OR SYSTEMS CREATED USING
CYPRESS PRODUCTS, WILL BE FREE FROM CORRUPTION, ATTACK, VIRUSES, INTERFERENCE, HACKING, DATA LOSS OR THEFT, OR OTHER SECURITY INTRUSION (collectively, “Security
Breach”). Cypress disclaims any liability relating to any Security Breach, and you shall and hereby do release Cypress from any claim, damage, or other liability arising from any Security Breach. In
addition, the products described in these materials may contain design defects or errors known as errata which may cause the product to deviate from published specifications. To the extent permitted
by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any liability arising out of the application or use of any product or
circuit described in this document. Any information provided in this document, including any sample design information or programming code, is provided only for reference purposes. It is the responsibility
of the user of this document to properly design, program, and test the functionality and safety of any application made of this information and any resulting product. “High-Risk Device” means any
device or system whose failure could cause personal injury, death, or property damage. Examples of High-Risk Devices are weapons, nuclear installations, surgical implants, and other medical devices.
“Critical Component” means any component of a High-Risk Device whose failure to perform can be reasonably expected to cause, directly or indirectly, the failure of the High-Risk Device, or to affect
its safety or effectiveness. Cypress is not liable, in whole or in part, and you shall and hereby do release Cypress from any claim, damage, or other liability arising from any use of a Cypress product
as a Critical Component in a High-Risk Device. You shall indemnify and hold Cypress, its directors, officers, employees, agents, affiliates, distributors, and assigns harmless from and against all claims,
costs, damages, and expenses, arising out of any claim, including claims for product liability, personal injury or death, or property damage arising from any use of a Cypress product as a Critical
Component in a High-Risk Device. Cypress products are not intended or authorized for use as a Critical Component in any High-Risk Device except to the limited extent that (i) Cypress's published
data sheet for the product explicitly states Cypress has qualified the product for use in a specific High-Risk Device, or (ii) Cypress has given you advance written authorization to use the product as a
Critical Component in the specific High-Risk Device and you have signed a separate indemnification agreement.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 001-16238 Rev. *P
Revised May 4, 2020
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung.
Page 33 of 33
工商网监
湘ICP备2023018690号
