CY7C194B-25VC

CY7C194B CY7C195B 256 Kb (64K x 4) Static RAM General Description1 Features • Fast access time: 12 ns, 15 ns, and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Available in 24 DIP, 24 SOJ, 28 DIP, and 28 SOJ The CY7C194B-CY7C195B is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected. Output enable (OE) is supported only in CY7C195B.2 See the Truth Table in this data sheet for a complete description of read and write modes. The CY7C194B-CY7C195B is available in 24 DIP, 24 SOJ, 28 DIP, and 28 SOJ package(s). Logic Block Diagram RAM Array Sense Amps Row Decoder Input Buffer I/Ox CE Column Decoder WE Power Down Circuit OE (7C195 only) X A X Product Portfolio 12 ns 15 ns 25 ns Unit Maximum Access Time 12 15 25 ns Maximum Operating Current 90 80 80 mA Maximum CMOS Standby Current 10 10 10 mA Notes: 1. For best-practice recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. 2. All OE-specific descriptions and parameters in this datasheet pertain to CY7C195 only. Cypress Semiconductor Corporation Document #: 38-05409 Rev. *A • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised September 17, 2003 CY7C194B CY7C195B Pin Layout and Specifications CY7C195B 28 DIP (6.9 × 35.6 × 3.5 mm) – P21 NC 1 28 VCC A6 2 27 A5 A7 3 26 A4 A8 4 25 A3 A9 5 24 A2 A10 6 23 A1 A11 7 22 A0 A12 8 21 NC A13 9 20 NC A14 10 19 I/O3 A15 11 18 I/O2 CE 12 17 I/O1 OE 13 16 I/O0 GND 14 15 WE CY7C195B 28 SOJ (8 × 18 × 3.5 mm) – V21 Document #: 38-05409 Rev. *A NC 1 28 VCC A6 2 27 A5 A7 3 26 A4 A8 4 25 A3 A9 5 24 A2 A10 6 23 A1 A11 7 22 A0 A12 8 21 NC A13 9 20 NC A14 10 19 I/O3 A15 11 18 I/O2 CE 12 17 I/O1 OE 13 16 I/O0 GND 14 15 WE Page 2 of 13 CY7C194B CY7C195B Pin Layout and Specifications (continued) CY7C194B 24 SOJ (8 × 15 × 3.5 mm) – V13 A6 1 24 VCC A7 2 23 A5 A8 3 22 A4 A9 4 21 A3 A10 5 20 A2 A11 6 19 A1 A12 7 18 A0 A13 8 17 I/O3 A14 9 16 I/O2 A15 10 15 I/O1 CE 11 14 I/O0 GND 12 13 WE CY7C194B 24 DIP (6.6 × 31.8 × 3.5 mm) – P13 Document #: 38-05409 Rev. *A A6 1 24 VCC A7 2 23 A5 A8 3 22 A4 A9 4 21 A3 A10 5 20 A2 A11 6 19 A1 A12 7 18 A0 A13 8 17 I/O3 A14 9 16 I/O2 A15 10 15 I/O1 CE 11 14 I/O0 GND 12 13 WE Page 3 of 13 CY7C194B CY7C195B Pin Description Pin Type Description AX Input Address Inputs. CE Control Chip Enable. I/OX Input or Output Data Input/Outputs. NC – No Connect. Pins are not internally connected to the die. 28 DIP 24 DIP 24 SOJ 28 SOJ 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 22, 23, 24, 25, 26, 27 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 18, 19, 20, 21, 22, 23 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 18, 19, 20, 21, 22, 23 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 22, 23, 24, 25, 26, 27 12 11 11 12 16, 17, 18, 19 14, 15, 16, 17 14, 15, 16, 17 16, 17, 18, 19 1, 20, 21 – – 1, 20, 21 OE Control Output Enable (CY7C195 only). 13 – – 13 VCC Supply Power (5.0V). 28 24 24 28 WE Control Write Enable. 15 13 13 15 CY7C195B Truth Table CE OE WE I/Ox Mode Power H X X High Z Deselect / Power-Down Standby (ISB) L L H Data Out Read Active (ICC ) L X L Data In Write Active (ICC ) L H H High Z Selected, outputs disabled Active (ICC ) CY7C194B Truth Table CE WE Input/Output Mode Power H X High Z Power-Down Standby (I SB ) L H Data Out Read Active (I CC ) L L Data In W rite Active (I CC ) Document #: 38-05409 Rev. *A Page 4 of 13 CY7C194B CY7C195B Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Value Unit TSTG Parameter Storage Temperature Description –65 to +150 °C TAMB Ambient Temperature with Power Applied (i.e. case temperature) –55 to +125 °C VCC Core Supply Voltage Relative to VSS –0.5 to +7.0 V VCC DC Voltage Applied to any Pin Relative to VSS IOUT Output Short-Circuit Current VESD Static Discharge Voltage (per MIL-STD-883, Method 3015) > 2001 V ILU Latch-up Current > 200 mA –0.5 to VCC + null V 20 mA Operating Range Range Ambient Temperature (TA) Voltage Range (VCC) Commercial 0°C to 70°C 5.0V ± 10% DC Electrical Characteristics3 12 ns Parameter Description Condition 15 ns 25 ns Min Max Min Max Min Max Unit VIH Input HIGH Voltage 2.2 VCC + 0.3 2.2 VCC + 0.3 2.2 VCC + 0.3 V VIL Input LOW Voltage –0.3 0.8 –0.3 0.8 –0.5 0.8 V VOH Output HIGH Volt- VCC = Min., loh = -4.0 ma age 2.4 – 2.4 – 2.4 – V VOL Output LOW Volt- VCC = Min., lol = 8.0 ma age – 0.4 – 0.4 – 0.4 V ICC VCC Operating Supply Current – 90 – 80 – 80 mA ISB1 Automatic CE VCC = Max., CE ≥ VIH, VIN ≥ VIH Power-down Cur- or VIN ≤ VIL, f = FMAX rent TTL Inputs – 30 – 30 – 30 mA ISB2 Automatic CE VCC = Max., CE ≥ VCC - 0.3v, Power-down Cur- VIN > VCC - 0.3v or VIN ≤ 0.3,f rent CMOS Inputs = 0 Commercial – 10 – 10 – 10 mA IOZ Output Leakage Current GND ≤ Vi ≤ VCC, Output Disabled –5 +5 –5 +5 –5 +5 uA IIX Input Load Current GND ≤ Vi ≤ VCC –5 +5 –5 +5 –5 +5 uA VCC = Max., IOUT = 0 mA, f = FMAX = 1 / tRC Capacitance4 Max Parameter Description CIN Input Capacitance COUT Output Capacitance Conditions ALL - PACKAGES Unit TA = 25C, f = 1 MHz, VCC = 5.0V 7 pF 10 Notes: 3. VIL (min) = –2.0V for pulse durations of less than 20 ns. 4. Tested initially and after any design or process change that may affect these parameters. Document #: 38-05409 Rev. *A Page 5 of 13 CY7C194B CY7C195B AC Test Loads Output Loads Output Loads for tHZOE, tHZCE & tHZWE R1 R3 VCC VCC Output C1 R2 C2 (A)* (B)* Thevenin Equivalent Output Rth R4 All Input Pulses VCC VT VSS 90% 90% 10% 10% Rise Time 1 V/ns Fall Time 1 V/ns * including scope and jig capacitance AC Test Conditions Parameter C1 Description Capacitor 1 Nom. Unit 30 pF C2 Capacitor 2 5 R1 Resistor 1 480 R2 Resistor 2 255 R3 Resistor 3 480 R4 Resistor 4 255 RTH Resistor Thevenin 167 VTH Voltage Thevenin 1.73 Ω V Thermal Resistance5 Parameter Description Conditions 28 SOJ 24 SOJ 28 DIP 24 DIP Unit ΘJA Thermal Resistance (Junction to Ambient) 69 TBD TBD TBD °C/W ΘJC Thermal Resistance (Junction to Case) Still Air, soldered on a 3 x 4.5 square inches, two-layer printed circuit board 29.84 TBD TBD TBD Notes: 5. Test Conditions assume a transition time of 3ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V Document #: 38-05409 Rev. *A Page 6 of 13 CY7C194B CY7C195B AC Electrical Characteristics2 6 7 8 12 ns Parameter Description Min 15 ns Max Min 25 ns Max Min Max Unit tRC Read Cycle Time 12 – 15 – 25 – ns tAA Address to Data Valid – 12 – 15 – 25 ns tOHA Data Hold from Address Change 3 – 3 – 3 – ns tACE CE to Data Valid – 12 – 15 – 25 ns tDOE OE to Data Valid – 6 – 7 – 10 ns tLZOE OE to Low Z 0 – 0 – 0 – ns tHZOE OE to High Z – 5 – 7 – 10 ns tLZCE CE to Low Z 3 – 3 – 3 – ns tHZCE CE to High Z – 5 – 7 – 10 ns tPU CE to Power-up 0 – 0 – 0 – ns tPD CE to Power-down – 12 – 15 – 25 ns tWC Write Cycle Time 12 – 15 – 25 – ns tSCE CE to Write End 9 – 10 – 18 – ns tAW Address Set-up to Write End 9 – 10 – 20 – ns tHA Address Hold from Write End 0 – 0 – 0 – ns tSA Address Set-up to Write Start 0 – 0 – 0 – ns tPWE WE Pulse Width 8 – 9 – 18 – ns tSD Data Set-Up to Write End 7 – 8 – 10 – ns tHD Data Hold from Write End 0 – 0 – 0 – ns tHZWE WE LOW to High Z – 6 – 7 - 10 ns tLZWE WE HIGH to Low Z 3 – 3 – 3 – ns Notes: 6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device. 7. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write. 8. tHZOE, tHZCE, tHZWE are specified as in part (b) of the A/C Test Loads. Transitions are measured ± 200 mV from steady state voltage Document #: 38-05409 Rev. *A Page 7 of 13 CY7C194B CY7C195B Timing Waveforms Read Cycle No. 1 9 10 tRC Address tAA tOHA Data Out Previous Data Valid Read Cycle No. 2 2 11 Data Valid 12 tRC Address CE tHZCE tACE OE tDOE tHZOE tLZOE High Z Data Out VCC Current ICC tLZCE tPU ISB High Z Data Valid tPD 50% 50% Notes: 9. Device is continuously selected. OE = VIL = CE. 10. WE is HIGH for Read Cycle. 11. This cycle is OE Controlled and WE is HIGH read cycle. 12. Address valid prior to or coincident with CE transition LOW. Document #: 38-05409 Rev. *A Page 8 of 13 CY7C194B CY7C195B Write Cycle No. 1 (WE Controlled) 2 13 14 15 tWC Address tSCE CE tAW tHA tPWE tSA WE OE tHZOE Data In/Out tSD Undefined Data-In Valid see footnotes Write Cycle No. 2 (CE Controlled)16 tHD 17 18 tWC Address tSCE CE tSA tHA tAW WE tSD Data In/Out High Z Data-In Valid tHD High Z Notes: 13. This cycle is WE controlled, OE is HIGH during write. 14. Data In/Out is high impedance if OE = VIH. 15. During this period the I/Os are in output state and input signals should not be applied. 16. This cycle is CE controlled. 17. Data In/Out is high impedance if OE = VIH. 18. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state. Document #: 38-05409 Rev. *A Page 9 of 13 CY7C194B CY7C195B Write Cycle No. 3 (WE Controlled, OE Low) 2 19 t WC Address tSCE CE tAW tHA tPWE tSA WE tSD Data In/Out Undefined tHD Undefined See Footnotes Data-In Valid see footnotes tHZWE tLZWE Ordering Information Speed Ordering Code Package Name Package Type Power Option Operating Range 12 ns CY7C195B-12VC V21 28 SOJ (8 x 18 x 3.5 mm) Standard Commercial 15 ns CY7C194B-15PC P13 24 DIP (6.6 x 31.8 x 3.5 mm) Standard Commercial 15 ns CY7C194B-15VC V13 24 SOJ (8 x 15 x 3.5 mm) Standard Commercial 15 ns CY7C195B-15VC V21 28 SOJ (8 x 18 x 3.5 mm) Standard Commercial 25 ns CY7C194B-25VC V13 24 SOJ (8 x 15 x 3.5 mm) Standard Commercial 25 ns CY7C195B-25PC P21 28 DIP (6.9 x 35.6 x 3.5 mm) Standard Commercial Notes: 19. The cycle is WE controlled, OE low. The minimum write cycle time is the sum of tHZWE and tSD. Document #: 38-05409 Rev. *A Page 10 of 13 CY7C194B CY7C195B Package Diagram 24-Lead (300-Mil) Molded SOJ V13 51-85030-A 28-Lead (300-Mil) Molded SOJ V21 MIN. MAX. DIMENSIONS IN INCHES PIN 1 ID 14 DETAIL A EXTERNAL LEAD DESIGN 1 0.291 0.300 15 0.330 0.350 OPTION 1 0.697 0.713 Document #: 38-05409 Rev. *A 0.014 0.020 OPTION 2 SEATING PLANE 0.120 0.140 0.050 TYP. 0.026 0.032 0.013 0.019 28 A 0.004 0.025 MIN. 0.007 0.013 0.262 0.272 51-85031-*B Page 11 of 13 CY7C194B CY7C195B Package Diagram (continued) 24-Lead (300-Mil) PDIP P13 51-85013-*B 28-Lead (300-Mil) Molded DIP P21 51-85014-*B All product and company names mentioned in this document may be the trademarks of their respective holders. Document #: 38-05409 Rev. *A Page 12 of 13 © Cypress Semiconductor Corporation, 2003. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C194B CY7C195B Document History Page Document Title: CY7C194B-CY7C195B 256 Kb (64K x 4) Static RAM Document Number: 38-05409 REV. ECN No. Issue Date Orig. of Change ** 129234 09/16/03 HGK New Data Sheet *A 129786 09/18/03 AJU Found typos in AC Electrical Characteristics table. Modified the following: tSCE from 10, 12 and 20 to 9, 10 and 18; tAW from 10, 12 and 20 to 9, 10 and 20; tPWE from 10, 12 and 20 to 8, 9 and 18. Document #: 38-05409 Rev. *A Description of Change Page 13 of 13