CY7C25682KV18
CY7C25702KV18
72-Mbit DDR II+ SRAM Two-Word Burst Architecture
(2.5 Cycle Read Latency) with ODT
72-Mbit DDR II+ SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
Features
Configurations
■
72-Mbit density (4M × 18, 2M × 36)
With Read Cycle Latency of 2.5 cycles:
■
550 MHz clock for high bandwidth
CY7C25682KV18 – 4M × 18
■
Two-word burst for reducing address bus frequency
CY7C25702KV18 – 2M × 36
■
Double data rate (DDR) interfaces (data transferred at
1100 MHz) at 550 MHz
Functional Description
■
Available in 2.5 clock cycle latency
■
Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■
Echo Clocks (CQ and CQ) simplify data capture in high speed
systems
■
Data valid pin (QVLD) to indicate valid data on the output
■
On-die termination (ODT) feature
❐ Supported for D[x:0], BWS[x:0], and K/K inputs
■
Synchronous internally self-timed writes
■
DDR II+ operates with 2.5 cycle read latency when DOFF is
asserted HIGH
■
Operates similar to DDR I Device with 1 cycle read latency
when DOFF is asserted LOW
■
Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD[1]
❐ Supports both 1.5 V and 1.8 V I/O supply
■
HSTL inputs and variable drive HSTL output buffers
■
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
■
Offered in both Pb-free and non Pb-free packages
■
JTAG 1149.1 compatible test access port
■
Phase-locked loop (PLL) for accurate data placement
The CY7C25682KV18, and CY7C25702KV18 are 1.8 V
Synchronous Pipelined SRAMs equipped with DDR II+
architecture. The DDR II+ consists of an SRAM core with
advanced synchronous peripheral circuitry. Addresses for read
and write are latched on alternate rising edges of the input (K)
clock. Write data is registered on the rising edges of both K and
K. Read data is driven on the rising edges of K and K. Each
address location is associated with two 18-bit words
(CY7C25682KV18), or 36-bit words (CY7C25702KV18) that
burst sequentially into or out of the device.
These devices have an On-Die Termination feature supported
for D[x:0], BWS[x:0], and K/K inputs, which helps eliminate
external termination resistors, reduce cost, reduce board area,
and simplify board routing.
Asynchronous inputs include an output impedance matching
input (ZQ). Synchronous data outputs (Q, sharing the same
physical pins as the data inputs D) are tightly matched to the two
output echo clocks CQ/CQ, eliminating the need for separately
capturing data from each individual DDR SRAM in the system
design.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
For a complete list of related documentation, click here.
Selection Guide
Description
550 MHz
500 MHz
450 MHz
400 MHz
Unit
550
500
450
400
MHz
× 18
760
700
650
590
mA
× 36
970
890
820
750
Maximum Operating Frequency
Maximum Operating Current
Note
1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support VDDQ = 1.4 V to VDD.
Cypress Semiconductor Corporation
Document Number: 001-66483 Rev. *F
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised March 11, 2016
CY7C25682KV18
CY7C25702KV18
Logic Block Diagram – CY7C25682KV18
Write
Reg
CLK
Gen.
DOFF
R/W
BWS[1:0]
18
Output
Logic
Control
R/W
Read Data Reg.
36
VREF
Read Add. Decode
K
2M x 18 Array
K
Write
Reg
2M x 18 Array
LD
Address
Register
Write Add. Decode
21
A(20:0)
Control
Logic
18
18
Reg.
Reg. 18
Reg.
18
CQ
CQ
18
DQ[17:0]
QVLD
Logic Block Diagram – CY7C25702KV18
Write
Reg
CLK
Gen.
DOFF
VREF
R/W
BWS[3:0]
Read Add. Decode
K
1M x 36 Array
K
Write
Reg
1M x 36 Array
LD
Address
Register
Write Add. Decode
20
A(19:0)
36
Output
Logic
Control
R/W
Read Data Reg.
72
Control
Logic
36
36
Reg.
Reg. 36
Reg.
36
CQ
CQ
36
DQ[35:0]
QVLD
Document Number: 001-66483 Rev. *F
Page 2 of 29
CY7C25682KV18
CY7C25702KV18
Contents
Pin Configurations ........................................................... 4
Pin Definitions .................................................................. 5
Functional Overview ........................................................ 6
Read Operations ......................................................... 6
Write Operations ......................................................... 7
Byte Write Operations ................................................. 7
DDR Operation ............................................................ 7
Depth Expansion ......................................................... 7
Programmable Impedance .......................................... 7
Echo Clocks ................................................................ 7
Valid Data Indicator (QVLD) ........................................ 7
On-Die Termination (ODT) .......................................... 7
PLL .............................................................................. 7
Application Example ........................................................ 8
Truth Table ........................................................................ 9
Write Cycle Descriptions ................................................. 9
Write Cycle Descriptions ............................................... 10
IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 11
Disabling the JTAG Feature ...................................... 11
Test Access Port ....................................................... 11
Performing a TAP Reset ........................................... 11
TAP Registers ........................................................... 11
TAP Instruction Set ................................................... 11
TAP Controller State Diagram ....................................... 13
TAP Controller Block Diagram ...................................... 14
TAP Electrical Characteristics ...................................... 14
TAP AC Switching Characteristics ............................... 15
TAP Timing and Test Conditions .................................. 16
Identification Register Definitions ................................ 17
Scan Register Sizes ....................................................... 17
Document Number: 001-66483 Rev. *F
Instruction Codes ........................................................... 17
Boundary Scan Order .................................................... 18
Power Up Sequence in DDR II+ SRAM ......................... 19
Power Up Sequence ................................................. 19
PLL Constraints ......................................................... 19
Maximum Ratings ........................................................... 20
Operating Range ............................................................. 20
Neutron Soft Error Immunity ......................................... 20
Electrical Characteristics ............................................... 20
DC Electrical Characteristics ..................................... 20
AC Electrical Characteristics ..................................... 22
Capacitance .................................................................... 22
Thermal Resistance ........................................................ 22
AC Test Loads and Waveforms ..................................... 22
Switching Characteristics .............................................. 23
Switching Waveforms .................................................... 24
Read/Write/Deselect Sequence ................................ 24
Ordering Information ...................................................... 25
Ordering Code Definitions ......................................... 25
Package Diagram ............................................................ 26
Acronyms ........................................................................ 27
Document Conventions ................................................. 27
Units of Measure ....................................................... 27
Document History Page ................................................. 28
Sales, Solutions, and Legal Information ...................... 29
Worldwide Sales and Design Support ....................... 29
Products .................................................................... 29
PSoC® Solutions ...................................................... 29
Cypress Developer Community ................................. 29
Technical Support ..................................................... 29
Page 3 of 29
CY7C25682KV18
CY7C25702KV18
Pin Configurations
The pin configuration for CY7C25682KV18, and CY7C25702KV18 follow. [2]
Figure 1. 165-ball FBGA (13 × 15 × 1.4 mm) pinout
CY7C25682KV18 (4M × 18)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
A
A
R/W
BWS1
K
NC/144M
LD
A
A
CQ
B
NC
DQ9
NC
A
NC/288M
K
BWS0
A
NC
NC
DQ8
C
NC
NC
NC
VSS
A
NC
A
VSS
NC
DQ7
NC
D
NC
NC
DQ10
VSS
VSS
VSS
VSS
VSS
NC
NC
NC
E
NC
NC
DQ11
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ6
F
NC
DQ12
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ5
G
NC
NC
DQ13
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ4
NC
K
NC
NC
DQ14
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ3
L
NC
DQ15
NC
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ2
M
NC
NC
NC
VSS
VSS
VSS
VSS
VSS
NC
DQ1
NC
N
NC
NC
DQ16
VSS
A
A
A
VSS
NC
NC
NC
P
NC
NC
DQ17
A
A
QVLD
A
A
NC
NC
DQ0
R
TDO
TCK
A
A
A
ODT
A
A
A
TMS
TDI
CY7C25702KV18 (2M × 36)
1
2
3
4
5
6
7
8
9
10
11
A
CQ
NC/144M
A
R/W
BWS2
K
BWS1
LD
A
A
CQ
B
NC
DQ27
DQ18
A
BWS3
K
BWS0
A
NC
NC
DQ8
C
NC
NC
DQ28
VSS
A
NC
A
VSS
NC
DQ17
DQ7
D
NC
DQ29
DQ19
VSS
VSS
VSS
VSS
VSS
NC
NC
DQ16
E
NC
NC
DQ20
VDDQ
VSS
VSS
VSS
VDDQ
NC
DQ15
DQ6
F
NC
DQ30
DQ21
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ5
G
NC
DQ31
DQ22
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ14
H
DOFF
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
NC
NC
DQ32
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ13
DQ4
K
NC
NC
DQ23
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ12
DQ3
L
NC
DQ33
DQ24
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ2
M
NC
NC
DQ34
VSS
VSS
VSS
VSS
VSS
NC
DQ11
DQ1
N
NC
DQ35
DQ25
VSS
A
A
A
VSS
NC
NC
DQ10
P
NC
NC
DQ26
A
A
QVLD
A
A
NC
DQ9
DQ0
R
TDO
TCK
A
A
A
ODT
A
A
A
TMS
TDI
Note
2. NC/144M and NC/288M are not connected to the die and can be tied to any voltage level.
Document Number: 001-66483 Rev. *F
Page 4 of 29
CY7C25682KV18
CY7C25702KV18
Pin Definitions
Pin Name
I/O
Pin Description
DQ[x:0]
Input Output- Data Input Output Signals. Inputs are sampled on the rising edge of K and K clocks during valid write
Synchronous operations. These pins drive out the requested data when the read operation is active. Valid data is
driven out on the rising edge of both the K and K clocks during read operations. When read access is
deselected, Q[x:0] are automatically tri-stated.
CY7C25682KV18 DQ[17:0]
CY7C25702KV18 DQ[35:0]
LD
InputSynchronous Load. Sampled on the rising edge of the K clock. This input is brought LOW when a bus
Synchronous cycle sequence is defined. This definition includes address and read/write direction. All transactions
operate on a burst of 2 data. LD must meet the setup and hold times around edge of K.
BWS0,
BWS1,
BWS2,
BWS3
InputByte Write Select 0, 1, 2, and 3 Active LOW. Sampled on the rising edge of the K and K clocks during
Synchronous write operations. Used to select which byte is written into the device during the current portion of the
write operations. Bytes not written remain unaltered.
CY7C25682KV18 BWS0 controls D[8:0] and BWS1 controls D[17:9].
CY7C25702KV18 BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3
controls D[35:27].
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
ignores the corresponding byte of data and it is not written into the device.
A
InputAddress Inputs. Sampled on the rising edge of the K clock during active read and write operations.
Synchronous These address inputs are multiplexed for both read and write operations. Internally, the device is
organized as 4M × 18 (2 arrays each of 2M × 18) for CY7C25682KV18, and 2M × 36 (2 arrays each of
1M × 36) for CY7C25702KV18.
R/W
InputSynchronous Read or Write input. When LD is LOW, this input designates the access type (read when
Synchronous R/W is HIGH, write when R/W is LOW) for loaded address. R/W must meet the setup and hold times
around edge of K.
QVLD
Valid output Valid Output Indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ.
indicator
ODT [3]
On-Die Termination Input. This pin is used for On-Die termination of the input signals. ODT range
On-Die
Termination selection is made during power up initialization. A LOW on this pin selects a low range that follows
RQ/3.33 for 175 < RQ < 350 (where RQ is the resistor tied to ZQ pin)A HIGH on this pin selects a
input pin
high range that follows RQ/1.66 for 175 < RQ < 250 (where RQ is the resistor tied to ZQ pin). When
left floating, a high range termination value is selected by default.
K
Input Clock
Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0]. All accesses are initiated on the rising edge of K.
K
Input Clock
Negative Input Clock Input. K is used to capture synchronous data being presented to the device and
to drive out data through Q[x:0].
Note
3. On-Die Termination (ODT) feature is supported for D[x:0], BWS[x:0], and K/K inputs.
Document Number: 001-66483 Rev. *F
Page 5 of 29
CY7C25682KV18
CY7C25702KV18
Pin Definitions (continued)
Pin Name
I/O
Pin Description
CQ
Echo Clock
Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock
(K) of the DDR II+. The timing for the echo clocks is shown in the Switching Characteristics on page 23.
CQ
Echo Clock
Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock
(K) of the DDR II+. The timing for the echo clocks is shown in the Switching Characteristics on page 23.
ZQ
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 × RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which
enables the minimum impedance mode. This pin cannot be connected directly to GND or left
unconnected.
DOFF
Input
PLL Turn Off Active LOW. Connecting this pin to ground turns off the PLL inside the device. The
timing in the PLL turned off operation differs from those listed in this data sheet. For normal operation,
this pin can be connected to a pull up through a 10 K or less pull up resistor. The device behaves in
DDR I mode when the PLL is turned off. In this mode, the device can be operated at a frequency of up
to 167 MHz with DDR I timing.
TDO
Output
TDO Pin for JTAG.
TCK
Input
TCK Pin for JTAG.
TDI
Input
TDI Pin for JTAG.
TMS
Input
TMS Pin for JTAG.
NC
N/A
Not Connected to the Die. Can be tied to any voltage level.
NC/144M
Input
Not Connected to the Die. Can be tied to any voltage level.
NC/288M
Input
Not Connected to the Die. Can be tied to any voltage level.
VREF
VDD
VSS
VDDQ
InputReference
Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC
measurement points.
Power Supply Power Supply Inputs to the Core of the Device.
Ground
Ground for the Device.
Power Supply Power Supply Inputs for the Outputs of the Device.
Functional Overview
The CY7C25682KV18, and CY7C25702KV18 are synchronous
pipelined Burst SRAMs equipped with a DDR interface, which
operates with a read latency of two and half cycles when DOFF
pin is tied HIGH. When DOFF pin is set LOW or connected to
VSS the device behaves in DDR I mode with a read latency of
one clock cycle.
Accesses are initiated on the rising edge of the positive input
clock (K). All synchronous input and output timing is referenced
from the rising edge of the input clocks (K and K).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the rising edge of the input clocks (K and K). All
synchronous data outputs (Q[x:0]) pass through output registers
controlled by the rising edge of the input clocks (K and K).
All synchronous control (R/W, LD, BWS[X:0]) inputs pass through
input registers controlled by the rising edge of the input clock (K).
CY7C25682KV18 is described in the following sections. The
same basic descriptions apply to CY7C25702KV18.
Document Number: 001-66483 Rev. *F
Read Operations
The CY7C25682KV18 is organized internally as two arrays of
2M × 18. Accesses are completed in a burst of 2 sequential 18-bit
data words. Read operations are initiated by asserting R/W
HIGH and LD LOW at the rising edge of the positive input clock
(K). The address presented to the address inputs is stored in the
read address register. Following the next two K clock rise, the
corresponding 18-bit word of data from this address location is
driven onto the Q[17:0] using K as the output timing reference. On
the subsequent rising edge of K, the next 18-bit data word is
driven onto the Q[17:0]. The requested data is valid 0.45 ns from
the rising edge of the input clock (K and K). To maintain the
internal logic, each read access must be allowed to complete.
Read accesses can be initiated on every rising edge of the
positive input clock (K).
When read access is deselected, the CY7C25682KV18 first
completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the output following the next
rising edge of the negative input clock (K). This enables for a
transition between devices without the insertion of wait states in
a depth expanded memory.
Page 6 of 29
CY7C25682KV18
CY7C25702KV18
Write Operations
Programmable Impedance
Write operations are initiated by asserting R/W LOW and LD
LOW at the rising edge of the positive input clock (K). The
address presented to address inputs is stored in the write
address register. On the following K clock rise, the data
presented to D[17:0] is latched and stored into the 18-bit write
data register, provided BWS[1:0] are both asserted active. On the
subsequent rising edge of the negative input clock (K) the
information presented to D[17:0] is also stored into the write data
register, provided BWS[1:0] are both asserted active. The 36 bits
of data are then written into the memory array at the specified
location. Write accesses can be initiated on every rising edge of
the positive input clock (K). Doing so pipelines the data flow such
that 18 bits of data can be transferred into the device on every
rising edge of the input clocks (K and K).
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to allow the SRAM to adjust its output
driver impedance. The value of RQ must be 5 × the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175 and 350, with VDDQ = 1.5 V. The
output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.
When the write access is deselected, the device ignores all
inputs after the pending write operations have been completed.
Byte Write Operations
Byte write operations are supported by the CY7C25682KV18. A
write operation is initiated as described in the Write Operations
section. The bytes that are written are determined by BWS0 and
BWS1, which are sampled with each set of 18-bit data words.
Asserting the appropriate Byte Write Select input during the data
portion of a write latches the data being presented and writes it
into the device. Deasserting the Byte Write Select input during
the data portion of a write enables the data stored in the device
for that byte to remain unaltered. This feature can be used to
simplify read, modify, or write operations to a byte write
operation.
DDR Operation
The CY7C25682KV18 enables high-performance operation
through high clock frequencies (achieved through pipelining) and
DDR mode of operation. The CY7C25682KV18 requires two No
Operation (NOP) cycle during transition from a read to a write
cycle. At higher frequencies, some applications require third
NOP cycle to avoid contention.
If a read occurs after a write cycle, address and data for the write
are stored in registers. The write information is stored because
the SRAM cannot perform the last word write to the array without
conflicting with the read. The data stays in this register until the
next write cycle occurs. On the first write cycle after the read(s),
the stored data from the earlier write is written into the SRAM
array. This is called a Posted write.
If a read is performed on the same address on which a write is
performed in the previous cycle, the SRAM reads out the most
current data. The SRAM does this by bypassing the memory
array and reading the data from the registers.
Depth Expansion
Depth expansion requires replicating the LD control signal for
each bank. All other control signals can be common between
banks as appropriate.
Document Number: 001-66483 Rev. *F
Echo Clocks
Echo clocks are provided on the DDR II+ to simplify data capture
on high-speed systems. Two echo clocks are generated by the
DDR II+. CQ is referenced with respect to K and CQ is
referenced with respect to K. These are free-running clocks and
are synchronized to the input clock of the DDR II+. The timing for
the echo clocks is shown in the Switching Characteristics on
page 23.
Valid Data Indicator (QVLD)
QVLD is provided on the DDR II+ to simplify data capture on high
speed systems. The QVLD is generated by the DDR II+ device
along with data output. This signal is also edge aligned with the
echo clock and follows the timing of any data pin. This signal is
asserted half a cycle before valid data arrives.
On-Die Termination (ODT)
These devices have an On-Die Termination feature for Data
inputs (D[x:0]), Byte Write Selects (BWS[x:0]), and Input Clocks (K
and K). The termination resistors are integrated within the chip.
The ODT range selection is enabled through ball R6 (ODT pin).
The ODT termination tracks value of RQ where RQ is the resistor
tied to the ZQ pin. ODT range selection is made during power up
initialization. A LOW on this pin selects a low range that follows
RQ/3.33 for 175< RQ < 350(where RQ is the resistor tied to
ZQ pin) A HIGH on this pin selects a high range that follows
RQ/1.66 for 175< RQ < 250(where RQ is the resistor tied to
ZQ pin). When left floating, a high range termination value is
selected by default. For a detailed description on the ODT
implementation, refer to the application note, On-Die Termination
for QDRII+/DDRII+ SRAMs.
PLL
These chips use a PLL that is designed to function between
120 MHz and the specified maximum clock frequency. During
power up, when the DOFF is tied HIGH, the PLL is locked after
20 s of stable clock. The PLL can also be reset by slowing or
stopping the input clock K and K for a minimum of 30 ns.
However, it is not necessary to reset the PLL to lock to the
desired frequency. The PLL automatically locks 20 s after a
stable clock is presented. The PLL may be disabled by applying
ground to the DOFF pin. When the PLL is turned off, the device
behaves in DDR I mode (with one cycle latency and a longer
access time). For information, refer to the application note, PLL
Considerations in QDRII/DDRII/QDRII+/DDRII+.
Page 7 of 29
CY7C25682KV18
CY7C25702KV18
Application Example
Figure 2 shows two DDR II+ used in an application.
Figure 2. Application Example (Width Example)
SRAM#1
DQ[x:0]
A
LD
R/W
ZQ
CQ/CQ
BWS K
K
RQ
SRAM#2
DQ[x:0]
A
LD
R/W
ZQ
CQ/CQ
BWS K
RQ
K
DQ[2x:0]
ADDRESS
LD
R/W
BWS
CLKIN1/CLKIN1
CLKIN2/CLKIN2
SOURCE K
SOURCE K
FPGA / ASIC
Document Number: 001-66483 Rev. *F
Page 8 of 29
CY7C25682KV18
CY7C25702KV18
Truth Table
The truth table for the CY7C25682KV18, and CY7C25702KV18 follow. [4, 5, 6, 7, 8, 9]
Operation
K
LD
R/W
Write Cycle:
Load address; wait one cycle;
input write data on consecutive K and K rising edges.
L–H
L
L
D(A) at K(t + 1)
D(A+1) at K(t + 1)
Read Cycle: (2.5 cycle Latency)
Load address; wait two and half cycles;
read data on consecutive K and K rising edges.
L–H
L
H
Q(A) at K(t + 2)
Q(A+1) at K(t + 3)
NOP: No Operation
L–H
H
X
High Z
High Z
Stopped
X
X
Previous State
Previous State
Standby: Clock Stopped
DQ
DQ
Write Cycle Descriptions
The write cycle description table for CY7C25682KV18 follows. [4, 10]
BWS0
BWS1
K
K
L
L
L–H
–
L
L
–
L
H
L–H
L
H
–
H
L
L–H
H
L
–
H
H
L–H
H
H
–
Comments
During the data portion of a write sequence
CY7C25682KV18 both bytes (D[17:0]) are written into the device.
L-H During the data portion of a write sequence:
CY7C25682KV18 both bytes (D[17:0]) are written into the device.
–
During the data portion of a write sequence:
CY7C25682KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L–H During the data portion of a write sequence
CY7C25682KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
–
During the data portion of a write sequence
CY7C25682KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
L–H During the data portion of a write sequence
CY7C25682KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
–
No data is written into the devices during this portion of a write operation.
L–H No data is written into the devices during this portion of a write operation.
Notes
4. X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
5. Device powers up deselected with the outputs in a tri-state condition.
6. “A” represents address location latched by the devices when transaction was initiated. A + 1 represents the address sequence in the burst.
7. “t” represents the cycle at which a read/write operation is started. t + 1 and t + 2 are the first and second clock cycles succeeding the “t” clock cycle.
8. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges as well.
9. It is recommended that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.
10. Is based on a write cycle that was initiated in accordance with Truth Table. BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write cycle, as
long as the setup and hold requirements are achieved.
Document Number: 001-66483 Rev. *F
Page 9 of 29
CY7C25682KV18
CY7C25702KV18
Write Cycle Descriptions
The write cycle description table for CY7C25702KV18 follows. [11, 12]
BWS0
BWS1
BWS2
BWS3
K
K
Comments
L
L
L
L
L–H
–
During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
L
L
L
L
–
L
H
H
H
L–H
L
H
H
H
–
H
L
H
H
L–H
H
L
H
H
–
H
H
L
H
L–H
H
H
L
H
–
H
H
H
L
L–H
H
H
H
L
–
H
H
H
H
L–H
H
H
H
H
–
L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into
the device.
–
During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written
into the device. D[35:9] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into
the device. D[8:0] and D[35:18] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into
the device. D[17:0] and D[35:27] remains unaltered.
–
During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into
the device. D[26:0] remains unaltered.
–
No data is written into the device during this portion of a write operation.
L–H No data is written into the device during this portion of a write operation.
Notes
11. X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, represents rising edge.
12. Is based on a write cycle that was initiated in accordance with Truth Table on page 9. BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write
cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-66483 Rev. *F
Page 10 of 29
CY7C25682KV18
CY7C25702KV18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan Test Access
Port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard #1149.1-2001. The TAP operates using JEDEC
standard 1.8 V I/O logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are
internally pulled up and may be unconnected. They may
alternatively be connected to VDD through a pull up resistor. TDO
must be left unconnected. Upon power up, the device comes up
in a reset state, which does not interfere with the operation of the
device.
Test Access Port
Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select (TMS)
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. This pin may be left
unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and can be connected to the input of any of the registers. The
register between TDI and TDO is chosen by the instruction that
is loaded into the TAP instruction register. For information on
loading the instruction register, see TAP Controller State
Diagram on page 13. TDI is internally pulled up and can be
unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data out from the
registers. The output is active, depending upon the current state
of the TAP state machine (see Instruction Codes on page 17).
The output changes on the falling edge of TCK. TDO is
connected to the least significant bit (LSB) of any register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This Reset does not affect the operation of the
SRAM and can be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a High Z state.
TAP Registers
Registers are connected between the TDI and TDO pins to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction registers. Data
is serially loaded into the TDI pin on the rising edge of TCK. Data
is output on the TDO pin on the falling edge of TCK.
Document Number: 001-66483 Rev. *F
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO pins, as shown in TAP Controller Block Diagram on
page 14. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This enables shifting of data through the SRAM
with minimal delay. The bypass register is set LOW (VSS) when
the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several No Connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The boundary scan register is loaded with the contents of the
RAM input and output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. The
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can
be used to capture the contents of the input and output ring.
The Boundary Scan Order on page 18 shows the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected to
TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 17.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in Instruction
Codes on page 17. Three of these instructions are listed as
RESERVED and must not be used. The other five instructions
are described in this section in detail.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO pins. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
Page 11 of 29
CY7C25682KV18
CY7C25702KV18
IDCODE
The IDCODE instruction loads a vendor-specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO pins and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register at
power up or whenever the TAP controller is supplied a
Test-Logic-Reset state.
SAMPLE Z
The SAMPLE Z instruction connects the boundary scan register
between the TDI and TDO pins when the TAP controller is in a
Shift-DR state. The SAMPLE Z command puts the output bus
into a High Z state until the next command is supplied during the
Update IR state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the input and output pins is captured
in the boundary scan register.
PRELOAD places an initial data pattern at the latched parallel
outputs of the boundary scan register cells before the selection
of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required, that is, while the data
captured is shifted out, the preloaded data can be shifted in.
BYPASS
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
EXTEST
The EXTEST instruction drives the preloaded data out through
the system output pins. This instruction also connects the
boundary scan register for serial access between the TDI and
TDO in the Shift-DR controller state.
EXTEST OUTPUT BUS TRI-STATE
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tri-state mode.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
during the Capture-DR state, an input or output undergoes a
transition. The TAP may then try to capture a signal while in
transition (metastable state). This does not harm the device, but
there is no guarantee as to the value that is captured.
Repeatable results may not be possible.
The boundary scan register has a special bit located at bit #108.
When this scan cell, called the “extest output bus tri-state,” is
latched into the preload register during the Update-DR state in
the TAP controller, it directly controls the state of the output
(Q-bus) pins, when the EXTEST is entered as the current
instruction. When HIGH, it enables the output buffers to drive the
output bus. When LOW, this bit places the output bus into a
High Z condition.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller's capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
during a SAMPLE/PRELOAD instruction. If this is an issue, it is
still possible to capture all other signals and simply ignore the
value of the CK and CK captured in the boundary scan register.
This bit can be set by entering the SAMPLE/PRELOAD or
EXTEST command, and then shifting the desired bit into that cell,
during the Shift-DR state. During Update-DR, the value loaded
into that shift-register cell latches into the preload register. When
the EXTEST instruction is entered, this bit directly controls the
output Q-bus pins. Note that this bit is preset HIGH to enable the
output when the device is powered up, and also when the TAP
controller is in the Test-Logic-Reset state.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
Reserved
Document Number: 001-66483 Rev. *F
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Page 12 of 29
CY7C25682KV18
CY7C25702KV18
TAP Controller State Diagram
The state diagram for the TAP controller follows. [13]
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
SELECT
DR-SCAN
1
1
SELECT
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-IR
0
0
SHIFT-DR
0
SHIFT-IR
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-IR
1
0
1
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-IR
UPDATE-DR
1
1
0
PAUSE-DR
0
0
0
1
0
Note
13. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document Number: 001-66483 Rev. *F
Page 13 of 29
CY7C25682KV18
CY7C25702KV18
TAP Controller Block Diagram
0
Bypass Register
2
Selection
Circuitry
TDI
1
0
Selection
Circuitry
Instruction Register
31
30
29
.
.
2
1
0
1
0
TDO
Identification Register
108
.
.
.
.
2
Boundary Scan Register
TCK
TAP Controller
TMS
TAP Electrical Characteristics
Over the Operating Range
Parameter [14, 15, 16]
Description
Test Conditions
Min
Max
Unit
VOH1
Output HIGH Voltage
IOH =2.0 mA
1.4
–
V
VOH2
Output HIGH Voltage
IOH =100 A
1.6
–
V
VOL1
Output LOW Voltage
IOL = 2.0 mA
–
0.4
V
VOL2
Output LOW Voltage
IOL = 100 A
–
0.2
V
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IX
Input and Output Load Current
0.65 × VDD VDD + 0.3
GND VI VDD
V
–0.3
0.35 × VDD
V
–5
5
A
Notes
14. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics on page 20.
15. Overshoot: VIH(AC) < VDDQ + 0.3 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 0.3 V (Pulse width less than tCYC/2).
16. All Voltage referenced to Ground.
Document Number: 001-66483 Rev. *F
Page 14 of 29
CY7C25682KV18
CY7C25702KV18
TAP AC Switching Characteristics
Over the Operating Range
Parameter [17, 18]
Description
Min
Max
Unit
50
–
ns
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
–
20
MHz
tTH
TCK Clock HIGH
20
–
ns
tTL
TCK Clock LOW
20
–
ns
tTMSS
TMS Setup to TCK Clock Rise
5
–
ns
tTDIS
TDI Setup to TCK Clock Rise
5
–
ns
tCS
Capture Setup to TCK Rise
5
–
ns
tTMSH
TMS Hold after TCK Clock Rise
5
–
ns
tTDIH
TDI Hold after Clock Rise
5
–
ns
tCH
Capture Hold after Clock Rise
5
–
ns
tTDOV
TCK Clock LOW to TDO Valid
–
10
ns
tTDOX
TCK Clock LOW to TDO Invalid
0
–
ns
Setup Times
Hold Times
Output Times
Notes
17. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
18. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document Number: 001-66483 Rev. *F
Page 15 of 29
CY7C25682KV18
CY7C25702KV18
TAP Timing and Test Conditions
Figure 3 shows the TAP timing and test conditions. [19]
Figure 3. TAP Timing and Test Conditions
0.9 V
ALL INPUT PULSES
1.8 V
0.9 V
50
TDO
0V
Z0 = 50
(a)
CL = 20 pF
tTH
GND
tTL
Test Clock
TCK
tTMSH
tTMSS
tTCYC
Test Mode Select
TMS
tTDIS
tTDIH
Test Data In
TDI
Test Data Out
TDO
tTDOV
tTDOX
Note
19. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document Number: 001-66483 Rev. *F
Page 16 of 29
CY7C25682KV18
CY7C25702KV18
Identification Register Definitions
Value
Instruction Field
CY7C25682KV18
Revision Number (31:29)
Description
CY7C25702KV18
000
000
Cypress Device ID (28:12)
11010111000010100
11010111000100100
Cypress JEDEC ID (11:1)
00000110100
00000110100
ID Register Presence (0)
1
1
Version number.
Defines the type of SRAM.
Allows unique identification of
SRAM vendor.
Indicates the presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary Scan
109
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the input and output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the input and output contents. Places the boundary scan register between TDI and
TDO. Forces all SRAM output drivers to a High Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the input and output ring contents. Places the boundary scan register between TDI
and TDO. Does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operation.
Document Number: 001-66483 Rev. *F
Page 17 of 29
CY7C25682KV18
CY7C25702KV18
Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
28
10G
56
6A
84
1J
1
6P
29
9G
57
5B
85
2J
2
6N
30
11F
58
5A
86
3K
3
7P
31
11G
59
4A
87
3J
4
7N
32
9F
60
5C
88
2K
5
7R
33
10F
61
4B
89
1K
6
8R
34
11E
62
3A
90
2L
7
8P
35
10E
63
2A
91
3L
8
9R
36
10D
64
1A
92
1M
9
11P
37
9E
65
2B
93
1L
10
10P
38
10C
66
3B
94
3N
11
10N
39
11D
67
1C
95
3M
12
9P
40
9C
68
1B
96
1N
13
10M
41
9D
69
3D
97
2M
14
11N
42
11B
70
3C
98
3P
15
9M
43
11C
71
1D
99
2N
16
9N
44
9B
72
2C
100
2P
17
11L
45
10B
73
3E
101
1P
18
11M
46
11A
74
2D
102
3R
19
9L
47
10A
75
2E
103
4R
20
10L
48
9A
76
1E
104
4P
21
11K
49
8B
77
2F
105
5P
22
10K
50
7C
78
3F
106
5N
23
9J
51
6C
79
1G
107
5R
24
9K
52
8A
80
1F
108
Internal
25
10J
53
7A
81
3G
26
11J
54
7B
82
2G
27
11H
55
6B
83
1H
Document Number: 001-66483 Rev. *F
Page 18 of 29
CY7C25682KV18
CY7C25702KV18
Power Up Sequence in DDR II+ SRAM
PLL Constraints
DDR II+ SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
■
PLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var.
■
The PLL functions at frequencies down to 120 MHz.
■
If the input clock is unstable and the PLL is enabled, then the
PLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide 20 s of stable clock to
relock to the desired clock frequency.
Power Up Sequence
■
Apply power and drive DOFF either HIGH or LOW (All other
inputs can be HIGH or LOW).
❐ Apply VDD before VDDQ.
❐ Apply VDDQ before VREF or at the same time as VREF.
❐ Drive DOFF HIGH.
■
Provide stable DOFF (HIGH), power and clock (K, K) for 20 s
to lock the PLL
~
~
Figure 4. Power Up Waveforms
K
K
~
~
Unstable Clock
> 20μs Stable clock
Start Normal
Operation
Clock Start (Clock Starts after V DD / V DDQ Stable)
VDD / VDDQ
DOFF
Document Number: 001-66483 Rev. *F
V DD / V DDQ Stable (< +/- 0.1V DC per 50ns )
Fix HIGH (or tie to VDDQ)
Page 19 of 29
CY7C25682KV18
CY7C25702KV18
Maximum Ratings
Operating Range
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Range
Storage Temperature ............................... –65 °C to +150 °C
Commercial
Ambient Temperature
with Power Applied .................................. –55 °C to +125 °C
Industrial
Ambient
Temperature (TA)
VDD [20]
VDDQ [20]
0 °C to +70 °C
1.8 ± 0.1 V
1.4 V to
VDD
–40 °C to +85 °C
Supply Voltage on VDD Relative to GND .....–0.5 V to +2.9 V
Supply Voltage on VDDQ Relative to GND ..... –0.5 V to +VDD
DC Applied to Outputs in High Z ......–0.5 V to VDDQ + 0.3 V
DC Input Voltage [15] ........................... –0.5 V to VDD + 0.3 V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage
(MIL-STD-883, M 3015) ......................................... >2,001 V
Latch up Current .................................................... >200 mA
Neutron Soft Error Immunity
Parameter
Description
Test
Conditions Typ
Max*
Unit
LSBU
Logical
Single-Bit
Upsets
25 °C
197
216
FIT/
Mb
LMBU
Logical
Multi-Bit
Upsets
25 °C
0
0.01
FIT/
Mb
Single Event
Latch up
85 °C
0
0.1
FIT/
Dev
SEL
* No LMBU or SEL events occurred during testing; this column represents a
statistical 2, 95% confidence limit calculation. For more details refer to Application
Note, Accelerated Neutron SER Testing and Calculation of Terrestrial Failure
Rates - AN54908.
Electrical Characteristics
Over the Operating Range
DC Electrical Characteristics
Over the Operating Range
Parameter [16]
Description
VDD
Power Supply Voltage
Test Conditions
Min
Typ
Max
Unit
1.7
1.8
1.9
V
VDDQ
I/O Supply Voltage
1.4
1.5
VDD
V
VOH
Output HIGH Voltage
Note 21
VDDQ/2 – 0.12
–
VDDQ/2 + 0.12
V
VOL
Output LOW Voltage
Note 22
VDDQ/2 – 0.12
–
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH Voltage
IOH =0.1 mA, Nominal Impedance
VDDQ – 0.2
–
VDDQ
V
IOL = 0.1 mA, Nominal Impedance
VOL(LOW)
Output LOW Voltage
VSS
–
0.2
V
VIH
Input HIGH Voltage
VREF + 0.1
–
VDDQ + 0.15
V
VIL
Input LOW Voltage
-0.15
–
VREF – 0.1
V
IX
Input Leakage Current
GND VI VDDQ
2
–
2
A
IOZ
Output Leakage Current
GND VI VDDQ, Output Disabled
VREF
Input Reference Voltage [23] Typical Value = 0.75 V
2
–
2
A
0.68
0.75
0.95
V
Notes
20. Power up: assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
21. Outputs are impedance controlled. IOH = -(VDDQ/2)/(RQ/5) for values of 175 < RQ < 350.
22. Outputs are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 < RQ < 350.
23. VREF(min) = 0.68 V or 0.46 VDDQ, whichever is larger, VREF(max) = 0.95 V or 0.54 VDDQ, whichever is smaller.
Document Number: 001-66483 Rev. *F
Page 20 of 29
CY7C25682KV18
CY7C25702KV18
Electrical Characteristics (continued)
Over the Operating Range
DC Electrical Characteristics (continued)
Over the Operating Range
Parameter [16]
IDD [24]
ISB1
Description
VDD Operating Supply
Automatic Power Down
Current
Test Conditions
Min
Typ
Max
Unit
VDD = Max, IOUT = 0 mA, 550 MHz (× 18)
f = fMAX = 1/tCYC
(× 36)
–
–
760
mA
–
–
970
500 MHz (× 18)
–
–
700
(× 36)
–
–
890
450 MHz (× 18)
–
–
650
(× 36)
–
–
820
400 MHz (× 18)
–
–
590
(× 36)
–
–
750
Max VDD,
550 MHz (× 18)
Both Ports Deselected,
(× 36)
VIN VIH or VIN VIL
f = fMAX = 1/tCYC,
500 MHz (× 18)
Inputs Static
(× 36)
–
–
380
–
–
380
–
–
360
–
–
360
450 MHz (× 18)
–
–
340
(× 36)
–
–
340
400 MHz (× 18)
–
–
320
(× 36)
–
–
320
mA
mA
mA
mA
mA
mA
mA
Note
24. The operation current is calculated with 50% read cycle and 50% write cycle.
Document Number: 001-66483 Rev. *F
Page 21 of 29
CY7C25682KV18
CY7C25702KV18
AC Electrical Characteristics
Over the Operating Range
Parameter [25]
Description
Test Conditions
Min
Typ
Max
Unit
VIH
Input HIGH Voltage
VREF + 0.2
–
VDDQ + 0.24
V
VIL
Input LOW Voltage
–0.24
–
VREF – 0.2
V
Max
Unit
4
pF
4
pF
Capacitance
Parameter [26]
Description
CIN
Input capacitance
CO
Output capacitance
Test Conditions
TA = 25 C, f = 1 MHz, VDD = 1.8 V, VDDQ = 1.5 V
Thermal Resistance
Parameter [26]
JA (0 m/s)
Description
Thermal resistance
(junction to ambient)
JA (1 m/s)
165-ball FBGA Unit
Package
Test Conditions
Socketed on a 170 × 220 × 2.35 mm, eight-layer printed
circuit board
JA (3 m/s)
14.43
°C/W
13.40
°C/W
12.66
°C/W
JB
Thermal resistance
(junction to board)
11.38
°C/W
JC
Thermal resistance
(junction to case)
3.30
°C/W
AC Test Loads and Waveforms
Figure 5. AC Test Loads and Waveforms
VREF = 0.75 V
VREF
0.75 V
VREF
OUTPUT
Z0 = 50
Device
Under
Test
ZQ
RL = 50
R = 50
ALL INPUT PULSES
1.25 V
0.75 V
OUTPUT
Device
Under
VREF = 0.75 V Test ZQ
RQ =
250
(a)
0.75 V
INCLUDING
JIG AND
SCOPE
5 pF
[27]
0.25 V
Slew Rate = 2 V/ns
RQ =
250
(b)
Notes
25. Overshoot: VIH(AC) < VDDQ + 0.3 V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 0.3 V (Pulse width less than tCYC/2).
26. Tested initially and after any design or process change that may affect these parameters.
27. Unless otherwise noted, test conditions assume signal transition time of 2 V/ns, timing reference levels of 0.75 V, VREF = 0.75 V, RQ = 250, VDDQ = 1.5 V, input pulse
levels of 0.25 V to 1.25 V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 5 on page 22.
Document Number: 001-66483 Rev. *F
Page 22 of 29
CY7C25682KV18
CY7C25702KV18
Switching Characteristics
Over the Operating Range [27, 28]
Cypress Consortium
Parameter Parameter
Description
VDD(typical) to the first access [29]
tPOWER
550 MHz
500 MHz
450 MHz
400 MHz
Min Max Min Max Min Max Min Max
Unit
1
–
1
–
1
–
1
–
ms
tCYC
tKHKH
K clock cycle time
1.81
8.4
2.0
8.4
2.2
8.4
2.5
8.4
ns
tKH
tKHKL
Input clock (K/K) HIGH
0.4
–
0.4
–
0.4
–
0.4
–
ns
tKL
tKLKH
Input clock (K/K) LOW
0.4
–
0.4
–
0.4
–
0.4
–
ns
tKHKH
tKHKH
K clock rise to K clock rise (rising edge to rising
edge)
0.77
–
0.85
–
0.94
–
1.06
–
ns
Setup Times
tSA
tAVKH
Address setup to K clock rise
0.23
–
0.25
–
0.275
–
0.4
–
ns
tSC
tIVKH
Control setup to K clock rise (LD, R/W)
0.23
–
0.25
–
0.275
–
0.4
–
ns
tSCDDR
tIVKH
Double data rate control setup to clock (K/K) rise 0.18
(BWS0, BWS1, BWS2, BWS3)
–
0.20
–
0.22
–
0.28
–
ns
tSD
tDVKH
D[X:0] setup to clock (K/K) rise
0.18
–
0.20
–
0.22
–
0.28
–
ns
Hold Times
tHA
tKHAX
Address hold after K clock rise
0.23
–
0.25
–
0.275
–
0.4
–
ns
tHC
tKHIX
Control hold after K clock rise (LD, R/W)
0.23
–
0.25
–
0.275
–
0.4
–
ns
tHCDDR
tKHIX
Double data rate control hold after clock (K/K) rise 0.18
(BWS0, BWS1, BWS2, BWS3)
–
0.20
–
0.22
–
0.28
–
ns
tHD
tKHDX
D[X:0] hold after clock (K/K) rise
0.18
–
0.20
–
0.22
–
0.28
–
ns
–
0.45
–
0.45
–
0.45
–
0.45
ns
–
–0.45
–
–0.45
–
–0.45
–
ns
0.45
–
0.45
–
0.45
–
0.45
ns
–0.45
–
–0.45
–
–0.45
–
–0.45
–
ns
–
0.15
–
0.15
–
0.15
–
0.20
ns
Output Times
tCO
tCHQV
K/K clock rise to data valid
tDOH
tCHQX
Data output hold after output K/K clock rise (active –0.45
to active)
tCCQO
tCHCQV
K/K clock rise to echo clock valid
tCQOH
tCHCQX
Echo clock hold after K/K clock rise
tCQD
tCQHQV
Echo clock high to data valid
tCQDOH
tCQHQX
Echo clock high to data invalid
–0.15
–
–0.15
–
–0.15
–
–0.20
–
ns
tCQH
tCQHCQL
Output clock (CQ/CQ) HIGH [30]
0.655
–
0.75
–
0.85
–
1.00
–
ns
tCQHCQH
tCQHCQH
tCHZ
tCHQZ
CQ clock rise to CQ clock rise (rising edge to
0.655 –
0.75
–
0.85
–
1.00
–
rising edge) [30]
Clock (K/K) rise to high Z (active to high Z) [31, 32] –
0.45
–
0.45
–
0.45
–
0.45
tCLZ
tCHQX1
Clock (K/K) rise to low Z
tQVLD
tCQHQVLD
[31, 32]
Echo clock high to QVLD valid [33]
–
–0.45
–
–0.45
–
–0.45
–
–0.45
–
–0.15 0.15 –0.15 0.15 –0.15 0.15 –0.20 0.20
ns
ns
ns
ns
PLL Timing
tKC Var
tKC Var
Clock phase jitter
–
0.15
–
0.15
–
0.15
–
0.20
ns
tKC lock
tKC lock
PLL lock time (K)
20
–
20
–
20
–
20
–
s
tKC Reset
tKC Reset
K static to PLL reset [34]
30
–
30
–
30
–
30
–
ns
Notes
28. When a part with a maximum frequency above 400 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being
operated and outputs data with the output timings of that frequency range.
29. This part has an internal voltage regulator; tPOWER is the time that the power is supplied above VDD min initially before a read or write operation can be initiated.
30. These parameters are extrapolated from the input timing parameters (tCYC/2 - 250 ps, where 250 ps is the internal jitter). These parameters are only guaranteed by
design and are not tested in production.
31. tCHZ, tCLZ are specified with a load capacitance of 5 pF as in (b) of Figure 5 on page 22. Transition is measured 100 mV from steady-state voltage.
32. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.
33. tQVLD specification is applicable for both rising and falling edges of QVLD signal.
34. Hold to >VIH or
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