CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
®
16K/8K/4K × 16 MoBL ADM
Asynchronous Dual-Port Static RAM
16K/8K/4K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM
Features
■
True dual-ported memory block that allow simultaneous
independent access
❐ One port with dedicated time multiplexed address and data
(ADM) interface
❐ One port configurable to standard SRAM or time multiplexed
address and data interface
■
16 K/8 K/4 K × 16 memory configuration
■
High speed access
❐ 65 ns or 90 ns ADM interface
❐ 40 ns or 60 ns standard SRAM interface
■
Fully asynchronous operation
■
Port independent 1.8 V, 2.5 V, and 3.0 V IOs
■
Ultra low operating power
❐ Active: ICC = 15 mA (typical) at 90 ns
❐ Active: ICC = 25 mA (typical) at 65 ns
❐ Standby: ISB3 = 2 A (typical)
■
Port independent power-down
■
On-chip arbitration logic
■
Mailbox interrupt for port to port communication
■
Input Read and Output Drive registers
■
Upper byte and lower byte control
■
Small package: 6 × 6 mm, 100-ball Pb-free BGA
■
Industrial temperature range
Block Diagram
SFEN#
I/OL15-I/OL8
I/OL7-I/OL0
ADV#L
UB#L
LB#L
DataL
Mux'ed
Address /
Data
I/O Control
IRR1-IRR0 [note 2]
ODR4-ODR0
IRR/ODR
DataR
Dual Ported
Memory Array
16k/8k/4k x 16
AddrL
Mux'ed
Address/
Data
I/O Control
AddrR
I/OR15-I/OR8
I/OR7-I/OR0
ADV#R
UB#R
LB#R
A13-A0 [note 1]
Address
Decode
CS#L
OE#L
WE#L
Address
Decode
MSEL
CS#R
OE#R
WE#R
Control Logic
BUSY#L
INT#L
BUSY#R
INT#R
Notes
1. A13-A0 for CYDMX256A16 and CYDMX256B16; A12-A0 for CYDMX128A16 and CYDMX128B16; and A11-A0 for CYDMX064A16 and CYDMX064B16.
2. IRR1 and IRR2 not available for CYDMX256A16 and CYDMX256B16.
Cypress Semiconductor Corporation
Document Number: 001-08090 Rev. *J
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised July 28, 2017
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Contents
Pin Configurations ........................................................... 3
Pin Definitions .................................................................. 4
Functional Description ..................................................... 4
Power Supply .............................................................. 4
ADM Interface Read or Write Operation ..................... 4
Standard SRAM Interface Read
or Write Operation .............................................................. 5
Byte Select Operation ................................................. 5
Chip Select Operation ................................................. 5
Output Enable Operation ............................................. 5
Mailbox Interrupts ........................................................ 5
Arbitration Logic .......................................................... 5
Input Read Register .................................................... 5
Output Drive Register .................................................. 5
Architecture ...................................................................... 6
Maximum Ratings ............................................................. 8
Operating Range ............................................................... 8
Electrical Characteristics for VCC = 1.8 V ...................... 8
Electrical Characteristics for VCC = 2.5 V .................... 10
Electrical Characteristics for 3.0 V ............................... 11
Capacitance .................................................................... 12
AC Test Loads and Waveforms ..................................... 12
Document Number: 001-08090 Rev. *J
Switching Characteristics for VCC = 1.8 V ................... 13
Switching Waveforms .................................................... 16
Ordering Information ...................................................... 22
16K × 16 MoBL ADM
Asynchronous Dual-Port SRAM ....................................... 22
8K × 16 MoBL ADM
Asynchronous Dual-Port SRAM ....................................... 22
4K × 16 MoBL ADM
Asynchronous Dual-Port SRAM ....................................... 22
Ordering Code Definitions ......................................... 22
Package Diagram ............................................................ 23
Acronyms ........................................................................ 24
Document Conventions ................................................. 24
Units of Measure ....................................................... 24
Document History Page ................................................. 25
Sales, Solutions, and Legal Information ...................... 26
Worldwide Sales and Design Support ....................... 26
Products .................................................................... 26
PSoC® Solutions ...................................................... 26
Cypress Developer Community ................................. 26
Technical Support ..................................................... 26
Page 2 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Pin Configurations
Figure 1. 100-ball BGA pinout (Top View)
1
2
3
4
5
6
7
8
9
10
A
A5
A8
A11
UB#R
VSS
ADV#R
I/OR15
I/OR12
I/OR10
VSS
B
A3
A4
A7
A9
CE#R
WE#R
OE#R
VDDIOR
I/OR9
I/OR6 B
C
A0
A1
A2
A6
LB#R
IRR1[3]
I/OR14
I/OR11
I/OR7
VSS
D
ODR4
A10
A12[4]
I/OR13
I/OR8
I/OR5
I/O2R D
E
VSS
I/OR1
VSS
F SFEN#
ODR2 BUSY#R INT#R
A
C
DNU
ODR3
INT#L
VSS
VSS
I/OR4
VDDIOR
ODR1
BUSY#L
DNU
VCC
VSS
I/OR3
I/OR0
I/OL15 VDDIOL F
E
G
ODR0
DNU
DNU
DNU
OE#L
I/OL3
I/OL11
I/OL12
I/OL14
I/OL13 G
H
DNU
DNU
DNU
LB#L
CE#L
I/OL1
VDDIOL
MSEL
DNU
I/OL10 H
J
DNU
DNU
DNU
IRR0[5]
VCC
VSS
I/OL4
I/OL6
I/OL8
I/OL9
J
K
DNU
DNU
DNU
UB#L
ADV#L
WE#L
I/OL0
I/OL2
I/OL5
I/OL7
K
1
2
3
4
5
6
7
8
9
10
Notes
3. This pin is A13 for CYDMX256A16 and CYDMX256B16.
4. This pin is DNU for CYDMX064A16 and CYDMX064B16.
5. This pin is DNU for CYDMX256A16 and CYDMX256B16.
6. DNU pins are “do not use” pins. No trace or power component can be connected to these pins.
Document Number: 001-08090 Rev. *J
Page 3 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Pin Definitions
Left Port
Right Port
CS#L
CS#R
Chip select
WE#L
WE#R
Read/Write Enable
OE#L
OE#R
A0–A13
MSEL
Description
Output Enable
Address (A0–A11 for 4K device; A0–A12 for 8K device; A0–A13 for 16K device)
Right port interface mode select (0: Standard SRAM; 1: Address/Data Mux)
IOL0–IOL15
IOR0–IOR15
ADV#L
ADV#R
UB#L
UB#R
Upper byte select (IO8–IO15)
LB#L
LB#R
Lower byte select (IO0–IO7)
INT#L
INT#R
Interrupt Flag
BUSY#L
BUSY#R
SFEN#
IRR0-IRR1
ODR0-ODR4
Address/Data Bus Input/Output
Address Latch Enable; ADV#R only use when R-port is in ADM mode
Busy Flag
Special Function Enable Signal
Input signals for input read registers for CYDMX128A16, CYDMX128B16,
CYDMX064A16 and CYDMX064B16;
IRR0 is DNU and IRR1 is A13 for CYDMX256A16 and CYDMX256B16.
Output signals for output drive registers; These are open drained outputs.
VCC
Core power supply
GND
Ground
VDDIOL
Left port IO power supply
VDDIOR
Right port IO power supply
DNU
No Connect; Do not connect trace or power component to these pins.
Functional Description
The CYDMX256A16, CYDMX128A16, CYDMX064A16,
CYDMX256B16, CYDMX128B16, and CYDMX064B16 are low
power CMOS 16K/8K/4K × 16 dual-port static RAMs. The two
ports are: one dedicated time multiplexed address and data
(ADM) interface and one configurable standard SRAM or ADM
interface. The two ports permit independent, asynchronous read
and write access to any memory locations. Each port has
independent control pins: Chip Select (CS#), Write Enable
(WE#), and Output Enable (OE#). Two output flags are provided
on each port (BUSY# and INT#). BUSY# flag is triggered when
the port is trying to access the same memory location currently
being accessed by the other port. The Interrupt flag (INT#)
permits communication between ports or systems by means of
a mailbox. Power-down feature is controlled independently on
each port by a Chip Select (CS#) pin.
The CYDMX256A16, CYDMX128A16, CYDMX064A16,
CYDMX256B16, CYDMX128B16, and CYDMX064B16 are
available in 100-ball 0.5-mm pitch Ball Grid Array (BGA)
packages. Application areas include interprocessor and
multiprocessor designs, communications status buffering, and
dual-port video and graphics memory.
Document Number: 001-08090 Rev. *J
Power Supply
The core voltage (VCC) can be 1.8 V, 2.5 V, or 3.0 V, as long as
it is lower than or equal to the IO voltage. Each port operates on
independent IO voltages. This is determined by what is
connected to the VDDIOL and VDDIOR pins. The supported IO
standards are 1.8 V and 2.5 V LVCMOS and 3.0 V LVTTL.
ADM Interface Read or Write Operation
This description is applicable to both the left ADM port and right
port configured as an ADM port.
Three control signals, ADV#, WE#, and CS# are used to perform
the read and write operations. Address signals are first applied
to the IO bus along with CS# LOW. The addresses are loaded
from the IO bus in response to the rising edge of the Address
Latch Enable (ADV#) signal. It is necessary to meet the setup
(tAVDS) and hold (tAVDH) times given in the AC specifications with
valid address information to properly latch the addresses.
After the address signals are latched in, a read operation is
issued when WE# stays HIGH. The IO bus becomes High Z
when the address signals meet tAVDH. The read data is driven on
the IO bus tOE after the OE# is asserted LOW, and held until
tHZOE or tHZCS after the rising edge of OE# or CS#, whichever
comes first.
Page 4 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
A write operation is issued when WE# is asserted LOW. The
write data is applied to the IO bus right after address meets the
hold time (tAVDH). And write data is written with the rising edge
of either WE# or CS#, whichever comes first, and meets data
setup (tSD) and hold (tHD) times.
CYDMX256A16 and CYDMX256B16) is the mailbox for the left
port. When one port writes to the opposite port’s mailbox, an
interrupt signal is generated to the opposite port. The interrupt
resets when the owner reads the contents of its own mailbox.
The message written to the mailbox is user defined.
Standard SRAM Interface Read or Write Operation
Each port reads the other port’s mailbox without resetting the
interrupt. The active state of the busy signal (to a port) prevents
the port from setting the interrupt to the winning port. Also, an
active busy to a port prevents that port from reading its own
mailbox and resetting the interrupt to it.
This description is applicable to the right access port configured
as standard SRAM port. Read and write operations with
standard SRAM interface configuration is the same as the ADM
port except addresses are presented on the A bus. Operation is
controlled by CS#, OE#, and WE#. A read operation is issued
when WE# is asserted HIGH. A write operation is issued when
WE# is asserted LOW. The IO bus is the destination for read data
and the source for write data when the read operation is issued.
However, write data must be driven to IO when the write
operation is issued.
Byte Select Operation
The fundamental word size is 16 bits. Each word is broken up
into two 8-bit bytes. Each port has two active LOW byte enables:
UB# and LB#. Activating or deactivating the byte enables alters
the result of read and write operations to the port. During a write,
byte enable asserted HIGH inhibits the corresponding byte to be
updated in the addressed memory location. During a read, both
byte enables are inputs to the asynchronous output enable
control logic. When a byte enable is asserted HIGH, the
corresponding data byte is tristated. Subsequently, when the
byte enable is asserted LOW, the corresponding data byte is
driven with the read data.
Chip Select Operation
Each port has one active LOW chip select signal, CS#. CS# must
be asserted LOW for the port to be considered active. To issue
a valid read or write operation, the chip select input must be
asserted LOW throughout the read or write cycle. When CS# is
deasserted HIGH during a write, if tWRL, tSD, and tHD are not met,
the contents of the addressed location is not altered.
An automatic power-down feature controlled by deactivating the
chip select (CS# HIGH) permits the on-chip circuitry of each port
to enter a very low standby power mode.
Output Enable Operation
Each port has one output enable signal, OE#. When OE# is
asserted HIGH, IO bus is tri-stated after tHZOE. When OE# is
asserted LOW, control of the IO bus is assumed by the
asynchronous output enable logic (the logic is controlled by
inputs WE#, CS#, UB#, and LB#).
Mailbox Interrupts
The upper two memory locations are used for message passing.
The highest memory location (0xFFF for CYDMX064A16 and
CYDMX064B16, 0x1FFF for CYDMX128A16 and CYDMX128B16,
and 0x3FFF for CYDMX256A16 and CYDMX256B16) is the
mailbox for the right port. The second highest memory location
(0xFFE for CYDMX064A16 and CYDMX064B16, 0x1FFE for
CYDMX128A16 and CYDMX128B16, and 0x3FFE for
Document Number: 001-08090 Rev. *J
On power-up, both interrupts are set by default. An initialization
program must be run to reset the interrupts.
If an application does not require message passing, do not
connect the interrupt pin to the processor’s interrupt request
input pin.
Arbitration Logic
The CYDMX256A16, CYDMX128A16, CYDMX064A16,
CYDMX256B16, CYDMX128B16, and CYDMX064B16 provide
on-chip arbitration to resolve simultaneous memory location
access (collision). If both ports’ CS# signals are asserted and an
address match occurs within each other, the busy logic
determines which port has access. If tPS is violated, one of the
two ports gains permission to the location, but it is not predictable
which port gets the permission. BUSY# is asserted tBLA after an
address match or tBLC after CS# is taken LOW.
Input Read Register
The Input Read Register (IRR) feature is available only for
CYDMX128A16, CYDMX128B16, CYDMX064A16, and
CYDMX064B16 devices. When SFEN# = VIL, the IRR captures
the status of two external devices connected to the Input Read
pins (IRR0 and IRR1) to address location 0x0000. Address
0x0000 is not available for standard memory accesses when
SFEN# = VIL. When SFEN# = VIH, address 0x0000 is available
for normal memory accesses. Either port accesses the contents
of IRR with normal read operation from address 0x0000. During
reads from the IRR, IO are valid bits and IO are
don’t care. The IRR inputs are 1.8 V and 2.5 V LVCMOS or 3.0 V
LVTTL, depending on the core voltage supply (VCC).
Output Drive Register
The Output Drive Register (ODR) determines the state of up to
five external binary state devices by providing a path to VSS for
the external circuit. These outputs are open drain. The five
external
devices
operates
at
different
voltages
(1.5 V VDDIO 3.5 V) but the combined current cannot exceed
40 mA (8 mA maximum for each external device). The status of
the ODR bits are set using standard write accesses from either
port to address 0x0001 with a ‘1’ corresponding to on and ‘0’
corresponding to off. The status of the ODR bits are read with a
normal read access to address 0x0001. When SFEN# = VIL, the
ODR is active and address 0x0001 is not available for memory
accesses. When SFEN# = VIH, the ODR is inactive and address
0x0001 is used for standard accesses. During reads and writes
to ODR, IO are valid and IO are don’t care.
Page 5 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Architecture
The CYDMX256A16, CYDMX128A16, CYDMX064A16,
CYDMX256B16, CYDMX128B16, and CYDMX064B16 consist
of an array of 16K, 8K, and 4K words of 16 dual-ported SRAM
cells, IO, address lines, and control signals (CS#, ADV#, OE#,
and WE#). Between the two access ports, one is a dedicated
time multiplexed address and data interface; the other is a pin
selectable port to either standard SRAM or time multiplexed
address and data interface. Independent control signals for each
port permit simultaneous access to any location in memory. To
handle the situation of writing and reading to the same location,
a BUSY# pin is provided on each port. For port to port
communication, an Interrupt (INT#) pin is also available on each
port.
Table 1. ADM Interface Read/Write with Byte Select Operations
ADV#
CS#
WE#
OE#
UB#
LB#
X
H
X
X
X
X
IO0–IO15
X
X
X
H
X
X
High Z
Output disable
X
X
X
X
H
H
High Z
Upper and lower byte
deselected
Pulse
L
H
L
L
L
Data Out (IO0–IO15)
Read upper and lower bytes
Pulse
L
H
L
H
L
Data Out (IO0–IO7)
High Z (IO8–IO15)
Read lower byte only
Pulse
L
H
L
L
H
High Z (IO0–IO7)
Data Out (IO8–IO15)
Read upper byte only
Pulse
L
L
X
L
L
Data In (IO0–IO15)
Write upper and lower bytes
Pulse
L
L
X
H
L
Data In (IO0–IO7)
High Z (IO8–IO15)
Write lower byte only
Pulse
L
L
X
L
H
High Z (IO0–IO7)
Data In (IO8–IO15)
Write upper byte only
High Z
Mode
Deselected or power-down
Table 2. Standard SRAM Interface Read/Write with Byte Select Operations
CS#
WE#
OE#
UB#
H
X
X
X
X
High Z
Deselected or power-down
X
X
H
X
X
High Z
Output disable
X
X
X
H
H
High Z
Upper and lower byte deselected
L
H
L
L
L
Data Out (IO0–IO15)
Read upper and lower bytes
L
H
L
H
L
Data Out (IO0–IO7)
High Z (IO8–IO15)
Read lower byte only
L
H
L
L
H
High Z (IO0–IO7)
Data Out (IO8–IO15)
Read upper byte only
L
L
X
L
L
Data In (IO0–IO15)
Write upper and lower bytes
L
L
X
H
L
Data In (IO0–IO7)
High Z (IO8–IO15)
Write lower byte only
L
L
X
L
H
High Z (IO0–IO7)
Data In (IO8–IO15)
Write upper byte only
Document Number: 001-08090 Rev. *J
LB#
IO0-IO15
Mode
Page 6 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Table 3. Interrupt Operation Example (Assumes BUSY#L = BUSY#R = HIGH)
Left Port
Function
WE#L CS#L OE#L
Set Right INT#R Flag
L
L
Right Port
AddressL
INT#L WE#R CS#R OE#R
0x3FFF[7]
X
X
X
X
AddressR
INT#R
X
L
X
[7]
H
Reset Right INT#R Flag
X
X
X
X
X
X
L
L
0x3FFF
Set Left INT#L Flag
X
X
X
X
L
L
L
X
0x3FFE[8]
X
H
X
X
X
X
X
Reset Left INT#L Flag
X
L
L
0x3FFE
[8]
Table 4. Arbitration Winning Port
CS#L
CS#R
Address Match
Left/Right Port
BUSY#L
BUSY#R
Function
X
X
No Match
H
H
Normal
H
X
Match
H
H
Normal
X
H
Match
H
H
Normal
L
L
Match
See Note[9]
See Note[9]
Write Inhibit[10]
Table 5. Input Read Register Operation[11]
SFEN#
CS#
WE#
OE#
UB#
LB#
ADDR
IO0–IO1
IO2–IO15
VALID[12]
H
L
H
L
L
L
x0000-Max
VALID[12]
L
L
H
L
X
L
x0000
VALID[13]
X
ADDR
IO0–IO4
IO5–IO15
Mode
Standard Memory Access
IRR Read
Table 6. Output Drive Register[15]
SFEN#
CS#
WE#
OE#
UB#
LB#
H
L
H
X[16]
L[12]
L[12]
L
L
L
X
X
L
L
L
H
L
X
L
Mode
x0000-Max VALID[12] VALID[12] Standard Memory Access
x0001
VALID[13]
X
ODR Write[17]
x0001
VALID[13]
X
ODR Read
Notes
7. 0x3FFF for CYDMX256A16 and CYDMX256B16, 0x1FFF for CYDMX128A16 and CYDMX128B16, 0xFFF for CYDMX064A16 and CYDMX064B16.
8. 0x3FFE for CYDMX256A16 and CYDMX256B16, 0x1FFE for CYDMX128A16 and CYDMX128B16, 0xFFE for CYDMX064A16 and CYDMX064B16.
9. If it meets tPS, "L" if the CS# and address of the opposite port become stable BEFORE the current port; "H" if the CS# and address of the opposite port become
stable AFTER the current port. If tPS is not met, either BUSY#L or BUSY#R results “L”. BUSY#L and BUSY#R cannot be “L” simultaneously.
10. Write operations to the left port are internally ignored when BUSY#L is driving LOW regardless of actual logic level on the pin; Write operations to the right port are
internally ignored when BUSY#R is driving LOW regardless of actual logic level on the pin.
11. SFEN# = VIL for IRR reads.
12. UB# or LB# = VIL. If LB# = VIL, then IO are valid. If UB# = VIL then IO are valid.
13. LB# must be active (LB# = VIL) for these bits to be valid.
14. SFEN# active when either CS#L = VIL or CS#R = VIL. It is inactive when CS#L = CS#R = VIH.
15. SFEN# = VIL for ODR reads and writes.
16. Output enable must be low (OE# = VIL) during reads for valid data to be output.
17. During ODR writes data is also written to the memory.
Document Number: 001-08090 Rev. *J
Page 7 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Maximum Ratings
Output Current into Outputs (LOW) ............................ 90 mA
Static Discharge Voltage ........................................ > 2000 V
Exceeding maximum ratings[18] may shorten the useful life of the
device. User guidelines are not tested.
Latch-up Current ................................................... > 200 mA
Storage Temperature ............................... –65 °C to +150 °C
Operating Range
Ambient Temperature with
Power Applied ......................................... –55 °C to +125 °C
Range
Industrial
Supply Voltage to Ground Potential .............–0.5 V to +3.3 V
Ambient Temperature
–40 °C to +85 °C
DC Voltage Applied to
Outputs in High Z State ...................... –0.5 V to VCC + 0.5 V
VCC
1.8 V ± 100 mV
2.5 V ± 100 mV
3.0 V ± 300 mV
DC Input Voltage[19] ............................ –0.5 V to VCC + 0.5 V
Electrical Characteristics for VCC = 1.8 V
Parameter
Over the Operating Range
VOH
VOL
VOL
ODR
VIH
VIL
IOZ
ICEX
ODR
CYDMX256A16
CYDMX128A16
CYDMX256B16
CYDMX128B16
CYDMX064B16
CYDMX256A16
CYDMX128A16
CYDMX064A16
–65
–65
–90
Description
P1 IO P2 IO
Voltage Voltage
Output HIGH voltage
(IOH = –100 A)
Min
1.8 V (any port) VDDIO
– 0.2
Unit
Typ
Max
Min
Typ
Max
Min
Typ Max
–
–
VDDIO
– 0.2
–
–
VDDIO
– 0.2
–
–
V
Output HIGH voltage (IOH = –2 mA) 2.5 V (any port)
2.0
–
–
2.0
–
–
2.0
–
–
V
Output HIGH voltage (IOH = –2 mA) 3.0 V (any port)
2.1
–
–
2.1
–
–
2.1
–
–
V
Output LOW voltage (IOL = 100 A 1.8 V (any port)
–
–
0.2
–
–
0.2
–
–
0.2
V
Output HIGH voltage (IOH = 2 mA)
2.5 V (any port)
–
–
0.4
–
–
0.4
–
–
0.4
V
Output HIGH voltage (IOH = 2 mA)
3.0 V (any port)
–
–
0.4
–
–
0.4
–
–
0.4
V
ODR output LOW voltage
(IOL = 8 mA
1.8 V (any port)
–
–
0.2
–
–
0.2
–
–
0.2
V
2.5 V (any port)
–
–
0.2
–
–
0.2
–
–
0.2
V
3.0 V (any port)
–
–
0.2
–
–
0.2
–
–
0.2
V
1.8 V (any port)
1.2
–
VDDIO
+ 0.2
1.2
–
VDDIO
+ 0.2
1.2
–
VDDIO
+ 0.2
V
2.5 V (any port)
1.7
–
VDDIO
+ 0.3
1.7
–
VDDIO
+ 0.3
1.7
–
VDDIO
+ 0.3
V
3.0 V (any port)
2.0
–
VDDIO
+ 0.2
2.0
–
VDDIO
+ 0.2
2.0
–
VDDIO
+ 0.2
V
1.8 V (any port)
–0.2
–
0.4
–0.2
–
0.4
–0.2
–
0.4
V
Input HIGH voltage
Input LOW voltage
Output leakage current
ODR output leakage current.
VOUT = VDDIO
2.5 V (any port)
–0.3
–
0.6
–0.3
–
0.6
–0.3
–
0.6
V
3.0 V (any port)
–0.2
–
0.7
–0.2
–
0.7
–0.2
–
0.7
V
1.8 V
1.8 V
–1
–
1
–1
–
1
–1
–
1
A
2.5 V
2.5 V
–1
–
1
–1
–
1
–1
–
1
A
3.0 V
3.0 V
–1
–
1
–1
–
1
–1
–
1
A
1.8 V
1.8 V
–1
–
1
–1
–
1
–1
–
1
A
2.5 V
2.5 V
–1
–
1
–1
–
1
–1
–
1
A
3.0 V
3.0 V
–1
–
1
–1
–
1
–1
–
1
A
Notes
18. The voltage on any input or IO pin cannot exceed the power pin during power-up.
19. Pulse width < 20 ns.
Document Number: 001-08090 Rev. *J
Page 8 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Electrical Characteristics for VCC = 1.8 V (continued)
Parameter
Over the Operating Range (continued)
IIX
CYDMX256A16
CYDMX128A16
CYDMX256B16
CYDMX128B16
CYDMX064B16
CYDMX256A16
CYDMX128A16
CYDMX064A16
–65
–65
–90
Description
P1 IO P2 IO
Voltage Voltage
Input leakage current
Min
Typ
Max
Min
Typ
Max
Min
Unit
Typ Max
1.8 V
1.8 V
–1
–
1
–1
–
1
–1
–
1
A
2.5 V
2.5 V
–1
–
1
–1
–
1
–1
–
1
A
3.0 V
3.0 V
–1
–
1
–1
–
1
–1
–
1
A
ICC
Operating current
(VCC = Max, IOUT = 0 mA)
outputs disabled
Ind.
1.8 V
1.8 V
–
25
40
–
25
40
–
15
25
mA
ISB1
Standby current
Ind.
(both ports TTL level)
CE#L and CE#R VCC – 0.2,
f = fMAX
1.8 V
1.8 V
–
2
6
–
2
6
–
2
6
A
ISB2
Standby current
Ind.
(One Port TTL level)
CE#L or CE#R VIH, f = fMAX
1.8 V
1.8 V
–
8.5
18
–
8.5
18
–
8.5
14
mA
ISB3
Ind.
Standby current
(both ports CMOS level) CE#L
and CE#R VCC 0.2 V, f = 0
1.8 V
1.8 V
–
2
6
–
2
6
–
2
6
A
ISB4
Standby current
(one port CMOS level)
CE#L or CE#R VIH,
f = fMAX[20]
1.8 V
1.8 V
–
8.5
18
–
8.5
18
–
8.5
14
mA
Ind.
Note
20. fMAX = 1/tRC = All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby
ISB3.
Document Number: 001-08090 Rev. *J
Page 9 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Electrical Characteristics for VCC = 2.5 V
Parameter
Over the Operating Range
CYDMX256A16
CYDMX128A16
CYDMX256B16
CYDMX128B16
CYDMX064B16
CYDMX256A16
CYDMX128A16
CYDMX064A16
–65
–65
–90
Description
Unit
P1 IO
P2 IO
Voltage Voltage
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
–
2.0
–
–
2.0
–
–
V
VOH
Output HIGH voltage
(IOH = –2 mA)
2.5 V (any port)
2.0
–
3.0 V (any port)
2.1
–
–
2.1
–
–
2.1
–
–
V
VOL
Output LOW voltage
(IOL = 2 mA)
2.5 V (any port)
–
–
0.4
–
–
0.4
–
–
0.4
V
3.0 V (any port)
–
–
0.4
–
–
0.4
–
–
0.4
V
VOL
ODR
ODR Output LOW voltage
(IOL = 8 mA
2.5 V (any port)
–
–
0.2
–
–
0.2
–
–
0.2
V
3.0 V (any port)
–
–
0.2
–
–
0.2
–
–
0.2
V
VIH
Input HIGH voltage
2.5 V (any port)
1.7
–
VDDIO
+ 0.3
1.7
–
VDDIO
+ 0.3
1.7
–
VDDIO
+ 0.3
V
3.0 V (any port)
2.0
–
VDDIO
+ 0.2
2.0
–
VDDIO
+ 0.2
2.0
–
VDDIO
+ 0.2
V
2.5 V (any port)
–0.3
–
0.6
–0.3
–
0.6
–0.3
–
0.6
V
3.0 V (any port)
VIL
Input LOW voltage
IOZ
Output leakage current
–0.2
–
0.7
–0.2
–
0.7
–0.2
–
0.7
V
2.5 V
2.5 V
–1
–
1
–1
–
1
–1
–
1
A
3.0 V
3.0 V
–1
–
1
–1
–
1
–1
–
1
A
2.5 V
–1
–
1
–1
–
1
–1
–
1
A
ICEX
ODR
ODR output leakage current.
VOUT = VCC
2.5 V
3.0 V
3.0 V
–1
–
1
–1
–
1
–1
–
1
A
IIX
Input leakage current
2.5 V
2.5 V
–1
–
1
–1
–
1
–1
–
1
A
3.0 V
3.0 V
–1
–
1
–1
–
1
–1
–
1
A
ICC
Operating current
Ind.
(VCC = Max, IOUT = 0 mA)
outputs disabled
2.5 V
2.5 V
–
39
55
–
39
55
–
28
40
mA
ISB1
Standby current
(both ports TTL level)
CE#L and
CE#R VCC – 0.2,
f = fMAX
Ind.
2.5 V
2.5 V
–
6
8
–
6
8
–
6
8
A
ISB2
Standby current
Ind.
(one port TTL level) CE#L
or CE#R VIH,
f = fMAX
2.5 V
2.5 V
–
21
30
–
21
30
–
18
25
mA
ISB3
Standby current
Ind.
(both ports CMOS level)
CE#L and
CE#R VCC 0.2 V, f = 0
2.5 V
2.5 V
–
4
6
–
4
6
–
4
6
A
ISB4
Standby current
(one port CMOS level)
CE#L or CE#R VIH,
f = fMAX[21]
2.5 V
2.5 V
–
21
30
–
21
30
–
18
25
mA
Ind.
Note
21. fMAX = 1/tRC = All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby ISB3.
Document Number: 001-08090 Rev. *J
Page 10 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Electrical Characteristics for 3.0 V
Parameter
Over the Operating Range
CYDMX256A16
CYDMX128A16
CYDMX256B16
CYDMX128B16
CYDMX064B16
CYDMX256A16
CYDMX128A16
CYDMX064A16
–65
–65
–90
Description
P1 IO P2 IO
Voltage Voltage Min Typ
Unit
Max
Min
Typ
Max
Min
Typ
Max
VOH
Output HIGH voltage (IOH = –2 mA)
3.0 V (any port)
2.1
–
–
2.1
–
–
2.1
–
–
V
VOL
Output LOW voltage (IOL = 2 mA
3.0 V (any port)
–
–
0.4
–
–
0.4
–
–
0.4
V
VOL
ODR
ODR output LOW voltage (IOL = 8 mA 3.0 V (any port)
–
–
0.2
–
–
0.2
–
–
0.2
V
VIH
Input HIGH voltage
3.0 V (any port)
2.0
–
VDDIO
+ 0.2
2.0
–
–
VDDIO
+ 0.2
V
VIL
Input LOW voltage
3.0 V (any port) –0.2
–
0.7
–0.2
–
0.7
–0.2
–
0.7
V
IOZ
Output leakage current
3.0 V
3.0 V
–1
–
1
–1
–
1
–1
–
1
A
ICEX
ODR
ODR output leakage current.
VOUT = VCC
3.0 V
3.0 V
–1
–
1
–1
–
1
–1
–
1
A
VDDIO 2.0
+ 0.2
IIX
Input leakage current
3.0 V
3.0 V
–1
–
1
–1
–
1
–1
–
1
A
ICC
Ind.
Operating current
(VCC = Max, IOUT = 0 mA) outputs
disabled
3.0 V
3.0 V
–
49
70
–
49
70
–
42
60
mA
ISB1
Standby current
(both ports TTL level)
CE#L and CE#R VCC – 0.2,
f = fMAX
Ind.
3.0 V
3.0 V
7
10
7
10
7
10
A
Ind.
3.0 V
3.0 V
28
40
28
40
25
35
mA
Standby current
(one port TTL level)
CE#L or CE#R VIH, f = fMAX
Ind.
3.0 V
3.0 V
6
8
6
8
6
8
A
Ind.
3.0 V
3.0 V
28
40
28
40
25
35
mA
ISB2
ISB3
ISB4
Document Number: 001-08090 Rev. *J
Page 11 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Capacitance
Parameter [22]
Description
CIN
Input capacitance
COUT
Output capacitance
Test Conditions
TA = 25 °C, f = 1 MHz, VCC = 3.0 V
Max
Unit
9
pF
10
pF
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
3.0 V/2.5 V/1.8 V
3.0 V/2.5 V/1.8 V
R1
RTH = 6 k
OUTPUT
OUTPUT
R1
OUTPUT
C = 30 pF
C = 30 pF
R2
C = 5 pF
VTH = 0.8 V
(a) Normal Load
(b) Thévenin Equivalent (Load 1)
3.0 V/2.5 V
1.8 V
R1
1022
13500
R2
792
10800
GND
10%
90%
3 ns
(c) Three-State Delay (Load 2)
(Used for tLZ, tHZ, tHZWE, and tLZWE
including scope and jig)
ALL INPUT PULSES
1.8 V
R2
90%
10%
3 ns
Note
22. Tested initially and after any design or process changes that may affect these parameters.
Document Number: 001-08090 Rev. *J
Page 12 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Switching Characteristics for VCC = 1.8 V
Over the Operating Range [23]
Parameter
CYDMX256A16
CYDMX128A16
CYDMX256B16
CYDMX128B16
CYDMX064B16
CYDMX256A16
CYDMX128A16
CYDMX064A16
–65
–65
–90
Description
Min
AD Mux Port Read Cycle
Max
Min
Max
Min
Unit
Max
[24]
tRC
Read cycle time
65
–
65
–
90
–
ns
tACC1
Random access ADV# Low to data valid
–
65
–
65
–
90
ns
tACC2
Random access Address to data valid
–
65
–
65
–
90
ns
tACC3
Random access CS# to data valid
–
65
–
65
–
90
ns
tAVDA
Random access ADV# High to data valid
–
35
–
35
–
50
ns
tAVD
ADV# low pulse
15
–
15
–
20
–
ns
tAVDS
Address setup to ADV# rising edge
15
–
15
–
20
–
ns
tAVDH
Address hold from ADV# rising edge
3
–
3
–
5
–
ns
tCSS
CS# setup to ADV# rising edge
7
–
7
–
10
–
ns
tOE
OE# Low to data valid
–
35
–
35
–
50
ns
OE# Low to IO Low Z
3
–
3
–
5
–
ns
tHZOE
OE# High to IO High Z
–
15
–
15
–
25
ns
tHZCS
CS# High to IO High Z
–
15
–
15
–
25
ns
tDBE
UB#/LB# Low to IO Valid
–
35
–
35
–
50
ns
tLZBE
UB#/LB# Low to IO Low Z
3
–
3
–
5
–
ns
tHZBE
UB#/LB# High to IO High Z
–
15
–
15
–
25
ns
tAVOE
ADV# High to OE# Low
0
–
0
–
0
–
ns
tLZOE
[25]
Notes
23. All timing parameters are measured with Load 2 specified in Figure 2 on page 12.
24. AD Mux port timing applies to left AD Mux port and right port configured to AD Mux port.
25. This parameter is guaranteed by not tested.
Document Number: 001-08090 Rev. *J
Page 13 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Switching Characteristics for VCC = 1.8 V (continued)
Over the Operating Range [23] (continued)
Parameter
CYDMX256A16
CYDMX128A16
CYDMX256B16
CYDMX128B16
CYDMX064B16
CYDMX256A16
CYDMX128A16
CYDMX064A16
–65
–65
–90
Description
AD Mux Port Write Cycle
Min
Max
Min
Max
Min
Max
Unit
[26]
tWC
Write cycle time
65
–
65
–
90
–
ns
tSCS
CS# Low to write end
65
–
65
–
90
–
ns
tAVD
ADV# Low pulse
15
–
15
–
20
–
ns
tAVDS
Address setup to ADV# rising edge
15
–
15
–
20
–
ns
tAVDH
Address hold from ADV# rising edge
3
–
3
–
5
–
ns
tCSS
CS# setup to ADV# rising edge
7
–
7
–
10
–
ns
tWRL
WE# pulse width
28
–
28
–
45
–
ns
tBW
UB#/LB# Low to write end
28
–
28
–
45
–
ns
tSD
Data setup to write end
20
–
20
–
30
–
ns
tHD
Data hold from write end
0
–
0
–
0
–
ns
tLZWE
WE# High to IO Low Z
0
–
0
–
0
–
ns
tAVWE
ADV# High to WE# Low
0
–
0
–
0
–
ns
Standard Port Read Cycle[27]
tRC
Read cycle time
40
–
60
–
60
–
ns
tAA
Address to data valid
–
40
–
60
–
60
ns
tOHA
Output hold from address change
5
–
5
–
5
–
ns
tACS
CS# to data valid
–
40
–
60
–
60
ns
OE# Low to data valid
–
25
–
35
–
35
ns
OE# Low to data Low Z
5
–
5
–
5
–
ns
tHZOE
OE# High to data High Z
–
10
–
30
–
30
ns
tLZCS
CS# Low to data Low Z
5
–
5
–
5
–
ns
tHZCS
CS# High to data High Z
–
10
–
30
–
30
ns
tLZBE
UB#/LB# Low to data Low Z
5
–
5
–
5
–
ns
tHZBE
UB#/LB# High to data High Z
–
10
–
30
–
30
ns
tABE
UB#/LB# access time
–
40
–
60
–
60
ns
tDOE
tLZOE
[28]
Notes
26. AD Mux port timing applies to left AD Mux port and right port configured to AD Mux port.
27. Standard SRAM port timing applies to right port configured to standard SRAM port.
28. This parameter is guaranteed by not tested.
Document Number: 001-08090 Rev. *J
Page 14 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Switching Characteristics for VCC = 1.8 V (continued)
Over the Operating Range [23] (continued)
Parameter
CYDMX256A16
CYDMX128A16
CYDMX256B16
CYDMX128B16
CYDMX064B16
CYDMX256A16
CYDMX128A16
CYDMX064A16
–65
–65
–90
Description
Min
Max
Min
Max
Min
Max
Unit
Standard SRAM Port Write Cycle
tWC
Write cycle time
40
–
60
–
60
–
ns
tSCS
CS# Low to Write End
30
–
50
–
50
–
ns
tAW
Address valid to write end
30
–
50
–
50
–
ns
tHA
Address hold from write end
0
–
0
–
0
–
ns
tSA
Address setup to write start
0
–
0
–
0
–
ns
tWRL
Write pulse width
25
–
45
–
45
–
ns
tSD
Data setup to write end
20
–
30
–
30
–
ns
tHD
Data hold from write end
0
–
0
–
0
–
ns
tHZWE
WE# Low to data High Z
–
15
–
25
–
25
ns
tLZWE
WE# High to data Low Z
0
–
0
–
0
–
ns
Arbitration Timing
tBLA
BUSY# Low from address match
–
30
–
50
–
50
ns
tBHA
BUSY# High from address mismatch
–
30
–
50
–
50
ns
tBLC
BUSY# Low from CS# Low
–
30
–
50
–
50
ns
tBHC
BUSY# High from CS# High
–
30
–
50
–
50
ns
tPS[29]
Port setup from priority
5
–
5
–
5
–
ns
tBDD
BUSY# High to data valid
–
30
–
50
–
50
ns
tWDD
Write pulse to data delay
–
55
–
85
–
85
ns
tDDD
Write data valid to read data valid
–
45
–
70
–
70
ns
Interrupt Timing
tINS
INT# set time
–
35
–
55
–
55
ns
tINR
INT# reset time
–
35
–
55
–
55
ns
Note
29. Add 2 ns to this parameter if VCC and VDDIOR are < 1.8 V, and VDDIOL is > 2.5 V at temperature < 0 °C.
Document Number: 001-08090 Rev. *J
Page 15 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Switching Waveforms
Figure 3. ADM Port Read Cycle (Either Port Access, WE# High)
tACC2
tAVD S
tAVDH
Valid Address
I/O[15:0]
Valid Data
tACC1
tAVD
ADV#
tAVDA
tHZC S
tACC3
t CSS
CS#
t HZOE
tOE
OE#
tAVOE
WE#
tHZ BE
tLZ BE
UB#, LB#
tDBE
Figure 4. ADM Port Write Cycle (Either Port Access, WE# Controlled, OE# High)
tAVD S
I/O[15:0]
ADV#
tAVDH
t SD
Addr1
tHD
WData1
tAVD
tSCS
CS#
t CSS
OE#
tWRL
WE#
t AVWE
UB#, LB#
Document Number: 001-08090 Rev. *J
tBW
Page 16 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Figure 5. ADM Port Write Cycle (Either Port Access, CS# Controlled, OE# High)
tAVD S
I/O[15:0]
ADV#
t SD
tAVDH
Addr1
tHD
WData1
tAVD
tSCS
CS#
t CSS
OE#
tWRL
WE#
t AVWE
UB#, LB#
tBW
Figure 6. Standard Port Read Cycle (Right Port Access, WE# High)
t RC
tAA
Address
t OHA
Valid Address
tACS
CS#
tLZCS
tHZ CS
tDOE
OE#
tLZOE
tHZOE
WE#
t ABE
UB#, LB#
Data Out
Document Number: 001-08090 Rev. *J
tLZ BE
tHZ BE
Valid Data
Page 17 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Figure 7. Standard Port Write Cycle (Right Port Access, WE# Controlled)
tWC
tAW
Valid Address
Address
t SA
tHA
CS#
OE#
tWRL
tH ZWE
WE#
UB#, LB#
tLZWE
t BW
tSD
tHD
Valid Data
Data
Figure 8. Standard Port Write Cycle (Right Port Access, CS# Controlled)
tWC
tAW
Valid Address
Address
t SA
CS#
tHA
tSCS
tLZCS
OE#
tWRL
WE#
UB#, LB#
tH ZWE
t BW
tSD
Data
Document Number: 001-08090 Rev. *J
tHD
Valid Data
Page 18 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Figure 9. Arbitration Timing
Address Match
Address L & R
CS#R
tPS
CS#L
tBLC
tBHC
BUSY#L
Figure 10. Arbitration Timing (Address Controlled with Left ADM and Right Standard Configuration
Left Address Valid First
I/OL[15:0]
ADV#L
t AVDH
Address L
(Internal)
Valid Left Address
t PS
Address Match
Address R
Mismatch
t BLA
tBH A
BUSY#R
Right Address Valid First
I/OL[15:0]
Valid Address
ADV#L
Data
Valid Address
t AVDH
tAVDH
Address L
(Internal)
Address Match
Mismatch
tPS
Address R
Valid Address
tBLA
tBHA
BUSY#L
Document Number: 001-08090 Rev. *J
Page 19 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Figure 11. Arbitration Timing (Address Controlled with Left ADM and Right ADM Configuration)
ADV#L
tAVDH
tAVDH
Address L
(Internal)
Mismatch
ADV#R
t PS
tAVDH
Address R
(internal)
Address Match
tBLA
tBHA
BUSY#R
Figure 12. Read with BUSY# Timing
I/OL[15:0]
Valid Address
Data
Valid Address
AVD#L
WE#L
Address R
Address Match
BUSY#R
tBDD
t DDD
Data Out R
Valid Data
tWDD
Document Number: 001-08090 Rev. *J
Page 20 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Figure 13. Interrupt Timing
Left Port Writes Right Mailbox to set INT#R
I/OL[15:0]
Right Mailbox Addr
Write D ata
tHD
OE#L
CS#L
WE#L
CS# or WE#, whichever
assert HIGH first
CS# or WE#, whichever
assert LOW later
t INS
INT#R
Right Port Reads Right Mailbox to Clear INT#R
Address R
Right Mailbox Addr
CS#R
OE#R
WE#R
CS#, OE# or WE#,
whichever assert latest
tINR
INT#R
Document Number: 001-08090 Rev. *J
Page 21 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Ordering Information
16K × 16 MoBL ADM Asynchronous Dual-Port SRAM
Speed
(ns)
Ordering Code
Package
Name
Package Type
Operating
Range
65
CYDMX256A16-65BVXI
BZ100
100-ball Pb-free 0.5 mm pitch BGA
Industrial
65
CYDMX256B16-65BVXI
BZ100
100-ball Pb-free 0.5 mm pitch BGA
Industrial
90
CYDMX256A16-90BVXI
BZ100
100-ball Pb-free 0.5 mm pitch BGA
Industrial
8K × 16 MoBL ADM Asynchronous Dual-Port SRAM
Speed
(ns)
Ordering Code
Package
Name
Package Type
Operating
Range
65
CYDMX128A16-65BVXI
BZ100
100-ball BGA Pb-free
Industrial
65
CYDMX128B16-65BVXI
BZ100
100-ball BGA Pb-free
Industrial
4K × 16 MoBL ADM Asynchronous Dual-Port SRAM
Speed
(ns)
90
Ordering Code
CYDMX064A16-90BVXI
Package
Name
BZ100
Package Type
100-ball BGA Pb-free
Operating
Range
Industrial
Ordering Code Definitions
CYDM X XXX X XX - XX BV X I
Temperature Range: I = Industrial
X = Pb-free
Package Type:
BV = 100-ball BGA
Latency in ns: XX = 65 or 90
Bus Width
Version
Dual-Port density in Kb: XXX = 064 or 128 or 256
X = AD Mux interface
No X = standard SRAM interface
CYDM = Cypress MoBL Dual-Port
Document Number: 001-08090 Rev. *J
Page 22 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Package Diagram
Figure 14. 100-ball VFBGA (6 × 6 × 1.0 mm) BZ100 Package Outline, 51-85209
E1
2X
0.10 C
E
B
(datum B)
A1 CORNER
A
10 9 8 7 6 5 4 3 2 1
7
A1 CORNER
A
B
C
D
E
F
G
H
J
K
6
SD
D
0.10 C 2X
eD
6
D1
(datum A)
eE
SE
TOP VIEW
BOTTOM VIEW
DETAIL A
0.10 C
A1
0.08 C
A
C
100XØb
5
SIDE VIEW
Ø0.15 M C A B
Ø0.05 M C
DETAIL A
NOTES:
SYMBOL
1. ALL DIMENSIONS ARE IN MILLIMETERS.
DIMENSIONS
MIN.
NOM.
MAX.
A
-
-
1.00
A1
0.16
-
-
2. SOLDER BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
3. "e" REPRESENTS THE SOLDER BALL GRID PITCH.
4. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
D
6.00 BSC
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
E
6.00 BSC
N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX
D1
4.50 BSC
E1
4.50 BSC
MD
10
ME
10
N
100
b
SIZE MD X ME.
5. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE
0.25
eD
0.30
0.50 BSC
eE
0.50 BSC
SD
0.25 BSC
SE
0.25 BSC
PARALLEL TO DATUM C.
6. "SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND
DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
0.35
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW
"SD" OR "SE" = 0.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW,
"SD" = eD/2 AND "SE" = eE/2.
7. A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK
METALIZED MARK, INDENTATION OR OTHER MEANS.
8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED SOLDER
BALLS.
9. JEDEC SPECIFICATION NO. REF. : MO-195C.
51-85209 *F
Document Number: 001-08090 Rev. *J
Page 23 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Acronyms
Acronym
Document Conventions
Description
Units of Measure
BGA
Ball Grid Array
CMOS
Complementary Metal Oxide Semiconductor
°C
degree Celsius
CS
Chip Select
MHz
megahertz
I/O
Input/Output
µA
microampere
LVCMOS
Low Voltage Complementary Metal Oxide
Semiconductor
mA
milliampere
mm
millimeter
LVTTL
Low Voltage Transistor-Transistor Logic
ms
millisecond
ODR
Output Drive Register
mV
millivolt
OE
Output Enable
ns
nanosecond
SRAM
Static Random Access Memory
ohm
TTL
Transistor-Transistor Logic
%
percent
VFBGA
Very Fine-Pitch Ball Grid Array
WE
Write Enable
Document Number: 001-08090 Rev. *J
Symbol
Unit of Measure
pF
picofarad
V
volt
W
watt
Page 24 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Document History Page
Document Title: CYDMX256A16/CYDMX256B16/CYDMX128A16/CYDMX128B16/CYDMX064A16/CYDMX064B16,
16K/8K/4K × 16 MoBL® ADM Asynchronous Dual-Port Static RAM
Document Number: 001-08090
Rev.
ECN No.
Orig. of
Change
Submission
Date
Description of Change
**
462234
HKH
05/22/2006
New data sheet
*A
491702
HKH
08/23/2006
Updated Switching Characteristics for VCC = 1.8 V:
Removed none applicable timing tBW
Revised standard port timing numbers
Corrected typo
*B
500425
HKH
09/07/2006
Updated Electrical Characteristics for VCC = 1.8 V:
Updated DC data that are previously TBD.
Updated Electrical Characteristics for VCC = 2.5 V:
Updated DC data that are previously TBD.
Updated Switching Characteristics for VCC = 1.8 V:
Added note for tLZOE that is guaranteed by design by not tested
Updated tWC, tSCS to reflect bin spec
Added note for special condition of tPS
*C
2147866
YDT / HKH
/ AESA
02/27/2008
Relaxed -65 Standard port timing to match the standard port timing of -90.
Added new devices CYDMX256B16, CYDMX128B16 and CYDMX064B16.
*D
3031102
VED
09/15/2010
No technical updates.
Changed to post on the external web.
*E
3053582
HKH
10/08/2010
Updated Ordering Information:
Updated part numbers.
Added Ordering Code Definitions.
Updated to new template.
*F
3209987
HKH
03/30/2011
Updated Ordering Information:
Updated part numbers.
Updated Package Diagram:
spec 51-85209 – Changed revision from *C to *D.
Updated to new template.
*G
3246085
HKH
05/02/2011
Added Acronyms and Units of Measure.
*H
3401875
HKH
10/11/2011
Updated Ordering Information:
Updated part numbers.
*I
4418141
HBM
06/24/2014
Updated to new template.
Completing Sunset Review.
*J
5836836
RAJV
07/28/2017
Updated Package Diagram:
spec 51-85209 – Changed revision from *D to *F.
Updated to new template.
Completing Sunset Review.
Document Number: 001-08090 Rev. *J
Page 25 of 26
CYDMX256A16/CYDMX256B16
CYDMX128A16/CYDMX128B16
CYDMX064A16/CYDMX064B16
Sales, Solutions, and Legal Information
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© Cypress Semiconductor Corporation, 2006–2017. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document,
including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
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Document Number: 001-08090 Rev. *J
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Revised July 28, 2017
Page 26 of 26
