Please note that Cypress is an Infineon Technologies Company.
The document following this cover page is marked as “Cypress” document as this is the
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The fact that Infineon offers the following product as part of the Infineon product
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www.infineon.com
THIS SPEC IS OBSOLETE
Spec No: 001-85935
Spec Title: FM25H20, 2-MBIT (256 K X 8) SERIAL (SPI) FRAM (PRELIMINARY)
Sunset Owner: Girija Chougala (GVCH)
Replaced by: None
PRELIMINARY
FM25H20
2-Mbit (256 K × 8) Serial (SPI) F-RAM
2-Mbit (256 K × 8) Serial (SPI) F-RAM
Functional Overview
■
2-Mbit ferroelectric random access memory (F-RAM) logically
organized as 256 K × 8
14
❐ High-endurance 100 trillion (10 ) read/writes
❐ 151-year data retention (See the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
The FM25H20 is a 2-Mbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
■
Very fast serial peripheral interface (SPI)
❐ Up to 40-MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■
Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
Unlike serial flash and EEPROM, the FM25H20 performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25H20 is capable of supporting
1014 read/write cycles, or 100 million times more write cycles
than EEPROM.
■
Low power consumption
❐ 1 mA active current at 1 MHz
❐ 80 A (typ) standby current
❐ 3 A sleep mode current
These capabilities make the FM25H20 ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
■
Low-voltage operation: VDD = 2.7 V to 3.6 V
■
Industrial temperature –40 C to +85 C
■
Packages
❐ 8-pin small outline integrated circuit (SOIC) package
❐ 8-pin thin dual flat no leads (TDFN) package
The FM25H20 provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25H20 uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
specifications are guaranteed over an industrial temperature
range of –40 C to +85 C.
■
Restriction of hazardous substances (RoHS) compliant
For a complete list of related documentation, click here.
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Features
Logic Block Diagram
WP
Instruction Decoder
Clock Generator
Control Logic
Write Protect
CS
HOLD
SCK
256 K x 8
F-RAM Array
Instruction Register
18
Address Register
Counter
SI
8
Data I/O Register
SO
3
Nonvolatile Status
Register
Cypress Semiconductor Corporation
Document Number: 001-85935 Rev. *G
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 3, 2015
PRELIMINARY
FM25H20
Contents
e
Operating Range ............................................................. 12
DC Electrical Characteristics ........................................ 12
Data Retention and Endurance ..................................... 13
Capacitance .................................................................... 13
Thermal Resistance ........................................................ 13
AC Test Conditions ........................................................ 13
AC Switching Characteristics ....................................... 14
Power Cycle Timing ....................................................... 16
Ordering Information ...................................................... 17
Ordering Code Definitions ......................................... 17
Package Diagrams .......................................................... 18
Acronyms ........................................................................ 20
Document Conventions ................................................. 20
Units of Measure ....................................................... 20
Document History Page ................................................. 21
Sales, Solutions, and Legal Information ...................... 22
Worldwide Sales and Design Support ....................... 22
Products .................................................................... 22
PSoC® Solutions ...................................................... 22
Cypress Developer Community ................................. 22
Technical Support ..................................................... 22
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Pinouts .............................................................................. 3
Pin Definitions .................................................................. 3
Overview ............................................................................ 4
Memory Architecture ........................................................ 4
Serial Peripheral Interface – SPI Bus .............................. 4
SPI Overview ............................................................... 4
SPI Modes ................................................................... 5
Power Up to First Access ............................................ 6
Command Structure .................................................... 6
WREN - Set Write Enable Latch ................................. 6
WRDI - Reset Write Enable Latch ............................... 6
Status Register and Write Protection ............................. 7
RDSR - Read Status Register ..................................... 8
WRSR - Write Status Register .................................... 8
Memory Operation ............................................................ 8
Write Operation ........................................................... 8
Read Operation ........................................................... 9
HOLD Pin Operation ................................................. 10
Sleep Mode ............................................................... 10
Endurance ................................................................. 11
Maximum Ratings ........................................................... 12
Document Number: 001-85935 Rev. *G
Page 2 of 22
PRELIMINARY
FM25H20
Pinouts
Figure 1. 8-pin SOIC pinout
CS
1
SO
2
WP
3
VSS
4
Top View
not to scale
8
VDD
7
HOLD
6
SCK
5
SI
Figure 2. 8-pin TDFN pinout
SO
2
WP
3
VSS
4
8
VDD
e
1
EXPOSED
PAD
7
HOLD
6
SCK
5
SI
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CS
Top View
not to scale
Pin Definitions
Pin Name
I/O Type
Description
CS
Input
Chip Select. This active LOW input activates the device. When HIGH, the device enters low-power
standby mode, ignores other inputs, and the output is tristated. When LOW, the device internally
activates the SCK signal. A falling edge on CS must occur before every opcode.
SCK
Input
Serial Clock. All I/O activity is synchronized to the serial clock. Inputs are latched on the rising
edge and outputs occur on the falling edge. Because the device is synchronous, the clock
frequency may be any value between 0 and 40 MHz and may be interrupted at any time.
SI[1]
Input
Serial Input. All data is input to the device on this pin. The pin is sampled on the rising edge of
SCK and is ignored at other times. It should always be driven to a valid logic level to meet IDD
specifications.
SO[1]
Output
Serial Output. This is the data output pin. It is driven during a read and remains tristated at all
other times including when HOLD is LOW. Data transitions are driven on the falling edge of the
serial clock.
WP
Input
Write Protect. This Active LOW pin prevents write operation to the Status Register when WPEN
is set to ‘1’. This is critical because other write protection features are controlled through the Status
Register. A complete explanation of write protection is provided in “Status Register and Write
Protection” on page 7. This pin must be tied to VDD if not used.
HOLD
Input
HOLD Pin. The HOLD pin is used when the host CPU must interrupt a memory operation for
another task. When HOLD is LOW, the current operation is suspended. The device ignores any
transition on SCK or CS. All transitions on HOLD must occur while SCK is LOW. This pin must be
tied to VDD if not used.
VSS
Power supply Ground for the device. Must be connected to the ground of the system.
VDD
Power supply Power supply input to the device.
EXPOSED PAD
No connect
The EXPOSED PAD on the bottom of 8-pin TDFN package is not connected to the die. The
EXPOSED PAD should be left floating.
Note
1. SI may be connected to SO for a single pin data interface.
Document Number: 001-85935 Rev. *G
Page 3 of 22
PRELIMINARY
The FM25H20 is a serial F-RAM memory. The memory array is
logically organized as 262,144 × 8 bits and is accessed using an
industry-standard serial peripheral interface (SPI) bus. The
functional operation of the F-RAM is similar to serial flash and
serial EEPROMs. The major difference between the FM25H20
and a serial flash or EEPROM with the same pinout is the
F-RAM's superior write performance, high endurance, and low
power consumption.
Memory Architecture
Most functions of the FM25H20 are either controlled by the SPI
interface or handled by on-board circuitry. The access time for
the memory operation is essentially zero, beyond the time
needed for the serial protocol. That is, the memory is read or
written at the speed of the SPI bus. Unlike a serial flash or
EEPROM, it is not necessary to poll the device for a ready
condition because writes occur at bus speed. By the time a new
bus transaction can be shifted into the device, a write operation
is complete. This is explained in more detail in the interface
section.
Serial Peripheral Interface – SPI Bus
The FM25H20 is a SPI slave device and operates at speeds up
to 40 MHz. This high-speed serial bus provides
high-performance serial communication to a SPI master. Many
common microcontrollers have hardware SPI ports allowing a
direct interface. It is quite simple to emulate the port using
ordinary port pins for microcontrollers that do not. The FM25H20
operates in SPI Mode 0 and 3.
SPI Overview
SPI Master
The SPI master device controls the operations on a SPI bus. An
SPI bus may have only one master with one or more slave
devices. All the slaves share the same SPI bus lines and the
master may select any of the slave devices using the CS pin. All
of the operations must be initiated by the master activating a
slave device by pulling the CS pin of the slave LOW. The master
also generates the SCK and all the data transmission on SI and
SO lines are synchronized with this clock.
SPI Slave
The SPI slave device is activated by the master through the Chip
Select line. A slave device gets the SCK as an input from the SPI
master and all the communication is synchronized with this
clock. An SPI slave never initiates a communication on the SPI
bus and acts only on the instruction from the master.
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When accessing the FM25H20, the user addresses 256K
locations of eight data bits each. These eight data bits are shifted
in or out serially. The addresses are accessed using the SPI
protocol, which includes a chip select (to permit multiple devices
on the bus), an opcode, and a three-byte address. The upper 6
bits of the address range are 'don't care' values. The complete
address of 18 bits specifies each byte address uniquely.
master is the opcode. Following the opcode, any addresses and
data are then transferred. The CS must go inactive after an
operation is complete and before a new opcode can be issued.
The commonly used terms in the SPI protocol are as follows:
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Overview
FM25H20
The SPI is a four-pin interface with Chip Select (CS), Serial Input
(SI), Serial Output (SO), and Serial Clock (SCK) pins.
The SPI is a synchronous serial interface, which uses clock and
data pins for memory access and supports multiple devices on
the data bus. A device on the SPI bus is activated using the CS
pin.
The relationship between chip select, clock, and data is dictated
by the SPI mode. This device supports SPI modes 0 and 3. In
both of these modes, data is clocked into the F-RAM on the rising
edge of SCK starting from the first rising edge after CS goes
active.
The SPI protocol is controlled by opcodes. These opcodes
specify the commands from the bus master to the slave device.
After CS is activated, the first byte transferred from the bus
Document Number: 001-85935 Rev. *G
The FM25H20 operates as an SPI slave and may share the SPI
bus with other SPI slave devices.
Chip Select (CS)
To select any slave device, the master needs to pull down the
corresponding CS pin. Any instruction can be issued to a slave
device only while the CS pin is LOW. When the device is not
selected, data through the SI pin is ignored and the serial output
pin (SO) remains in a high-impedance state.
Note A new instruction must begin with the falling edge of CS.
Therefore, only one opcode can be issued for each active Chip
Select cycle.
Serial Clock (SCK)
The Serial Clock is generated by the SPI master and the
communication is synchronized with this clock after CS goes
LOW.
The FM25H20 enables SPI modes 0 and 3 for data
communication. In both of these modes, the inputs are latched
by the slave device on the rising edge of SCK and outputs are
issued on the falling edge. Therefore, the first rising edge of SCK
signifies the arrival of the first bit (MSB) of a SPI instruction on
the SI pin. Further, all data inputs and outputs are synchronized
with SCK.
Data Transmission (SI/SO)
The SPI data bus consists of two lines, SI and SO, for serial data
communication. SI is also referred to as Master Out Slave In
(MOSI) and SO is referred to as Master In Slave Out (MISO). The
master issues instructions to the slave through the SI pin, while
the slave responds through the SO pin. Multiple slave devices
may share the SI and SO lines as described earlier.
The FM25H20 has two separate pins for SI and SO, which can
be connected with the master as shown in Figure 3.
Page 4 of 22
PRELIMINARY
For a microcontroller that has no dedicated SPI bus, a
general-purpose port may be used. To reduce hardware
resources on the controller, it is possible to connect the two data
pins (SI, SO) together and tie off (HIGH) the HOLD and WP pins.
Figure 4 shows such a configuration, which uses only three pins.
FM25H20
Serial Opcode
After the slave device is selected with CS going LOW, the first
byte received is treated as the opcode for the intended operation.
FM25H20 uses the standard opcodes for memory accesses.
Invalid Opcode
Most Significant Bit (MSB)
If an invalid opcode is received, the opcode is ignored and the
device ignores any additional serial data on the SI pin until the
next falling edge of CS, and the SO pin remains tristated.
The SPI protocol requires that the first bit to be transmitted is the
Most Significant Bit (MSB). This is valid for both address and
data transmission.
Status Register
The 2-Mbit serial F-RAM requires a 3-byte address for any read
or write operation. Because the address is only 18 bits, the first
six bits, which are fed in are ignored by the device. Although
these six bits are ‘don’t care’, Cypress recommends that these
bits be set to 0s to enable seamless transition to higher memory
densities.
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FM25H20 has an 8-bit Status Register. The bits in the Status
Register are used to configure the device. These bits are
described in Table 3 on page 7.
Figure 3. System Configuration with SPI Port
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SCK
MOSI
MISO
SCK
SPI
Microcontroller
SI
SO
SCK
FM25H20
CS HOLD WP
SI
SO
FM25H20
CS HOLD WP
CS1
HO LD 1
WP1
CS2
HO LD 2
WP2
Figure 4. System Configuration without SPI Port
P1.0
P1.1
SCK
SI
SO
Microcontroller
FM25H20
CS HOLD WP
P1.2
SPI Modes
FM25H20 may be driven by a microcontroller with its SPI
peripheral running in either of the following two modes:
■
SPI Mode 0 (CPOL = 0, CPHA = 0)
■
SPI Mode 3 (CPOL = 1, CPHA = 1)
Document Number: 001-85935 Rev. *G
For both these modes, the input data is latched in on the rising
edge of SCK starting from the first rising edge after CS goes
active. If the clock starts from a HIGH state (in mode 3), the first
rising edge after the clock toggles is considered. The output data
is available on the falling edge of SCK.
Page 5 of 22
PRELIMINARY
The two SPI modes are shown in Figure 5 on page 6 and Figure
6 on page 6. The status of the clock when the bus master is not
transferring data is:
■
SCK remains at 0 for Mode 0
■
SCK remains at 1 for Mode 3
The device detects the SPI mode from the status of the SCK pin
when the device is selected by bringing the CS pin LOW. If the
SCK pin is LOW when the device is selected, SPI Mode 0 is
assumed and if the SCK pin is HIGH, it works in SPI Mode 3.
Figure 5. SPI Mode 0
CS
1
2
3
5
4
6
7
WREN - Set Write Enable Latch
The FM25H20 will power up with writes disabled. The WREN
command must be issued before any write operation. Sending
the WREN opcode allows the user to issue subsequent opcodes
for write operations. These include writing the Status Register
(WRSR) and writing the memory (WRITE).
Sending the WREN opcode causes the internal Write Enable
Latch to be set. A flag bit in the Status Register, called WEL,
indicates the state of the latch. WEL = ’1’ indicates that writes are
permitted. Attempting to write the WEL bit in the Status Register
has no effect on the state of this bit – only the WREN opcode can
set this bit. The WEL bit will be automatically cleared on the rising
edge of CS following a WRDI, a WRSR, or a WRITE operation.
This prevents further writes to the Status Register or the F-RAM
array without another WREN command. Figure 7 illustrates the
WREN command bus configuration.
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0
FM25H20
SCK
Figure 7. WREN Bus Configuration
7
6
5
MSB
4
3
2
1
0
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SI
CS
LSB
0
2
3
4
5
6
7
SCK
Figure 6. SPI Mode 3
SI
CS
0
1
1
SCK
2
3
5
4
6
7
0
0
0
0
0
1
1
0
HI-Z
SO
WRDI - Reset Write Enable Latch
SI
7
MSB
6
5
4
3
2
1
0
LSB
Power Up to First Access
The FM25V20 is not accessible for a tPU time after power-up.
Users must comply with the timing parameter, tPU, which is the
minimum time from VDD (min) to the first CS LOW.
There are seven commands, called opcodes, that can be issued
by the bus master to the FM25H20. They are listed in Table 1.
These opcodes control the functions performed by the memory.
WREN
Set write enable latch
Opcode
0000 0110b
WRDI
Reset write enable latch
0000 0100b
RDSR
Read Status Register
0000 0101b
WRSR
Write Status Register
0000 0001b
READ
Read memory data
0000 0011b
WRITE
Write memory data
0000 0010b
SLEEP
Enter sleep mode
1011 1001b
Document Number: 001-85935 Rev. *G
0
1
2
3
4
5
6
7
SCK
SI
Table 1. Opcode Commands
Description
Figure 8. WRDI Bus Configuration
CS
Command Structure
Name
The WRDI command disables all write activity by clearing the
Write Enable Latch. The user can verify that writes are disabled
by reading the WEL bit in the Status Register and verifying that
WEL is equal to ‘0’. Figure 8 illustrates the WRDI command bus
configuration.
SO
0
0
0
0
0
1
0
0
HI-Z
Page 6 of 22
PRELIMINARY
Status Register and Write Protection
The write protection features of the FM25H20 are multi-tiered
and are enabled through the status register. The Status Register
FM25H20
is organized as follows. (The default value shipped from the
factory for bit 0, WEL, BP0, BP1, bits 4–5, WPEN is ‘0’, and for
bit 6 is ‘1’.)
Table 2. Status Register
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
WPEN (0)
X (1)
X (0)
X (0)
BP1 (0)
BP0 (0)
WEL (0)
X (0)
Table 3. Status Register Bit Definition
Bit
Definition
Description
Don’t care
This bit is non-writable and always returns ‘0’ upon read.
Bit 1 (WEL)
Write Enable
WEL indicates if the device is write enabled. This bit defaults to ‘0’ (disabled) on power-up.
WEL = '1' --> Write enabled
WEL = '0' --> Write disabled
Bit 2 (BP0)
Block Protect bit ‘0’
Used for block protection. For details, see Table 4 on page 7.
Bit 3 (BP1)
Block Protect bit ‘1’
Used for block protection. For details, see Table 4 on page 7.
Bit 4-5
Don’t care
These bits are non-writable and always return ‘0’ upon read.
Bit 6
Don’t care
This bit is non-writable and always returns ‘1’ upon read.
Bit 7 (WPEN)
Write Protect Enable bit Used to enable the function of Write Protect Pin (WP). For details, see Table 5 on page 7.
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Bit 0
Bits 0 and 4-5 are fixed at ‘0’ and bit 6 is fixed at ‘1’; none of these
bits can be modified. Note that bit 0 ("Ready or Write in progress”
bit in serial flash and EEPROM) is unnecessary, as the F-RAM
writes in real-time and is never busy, so it reads out as a ‘0’. An
exception to this is when the device is waking up from sleep
mode, which is described in Sleep Mode on page 10. The BP1
and BP0 control the software write-protection features and are
nonvolatile bits. The WEL flag indicates the state of the Write
Enable Latch. Attempting to directly write the WEL bit in the
Status Register has no effect on its state. This bit is internally set
and cleared via the WREN and WRDI commands, respectively.
BP1 and BP0 are memory block write protection bits. They
specify portions of memory that are write-protected as shown in
Table 4.
Table 4. Block Memory Write Protection
BP1
BP0
Protected Address Range
0
0
None
0
1
30000h to 3FFFFh (upper 1/4)
1
0
20000h to 3FFFFh (upper 1/2)
1
1
00000h to 3FFFFh (all)
Document Number: 001-85935 Rev. *G
The BP1 and BP0 bits and the Write Enable Latch are the only
mechanisms that protect the memory from writes. The remaining
write protection features protect inadvertent changes to the block
protect bits.
The write protect enable bit (WPEN) in the Status Register
controls the effect of the hardware write protect (WP) pin. When
the WPEN bit is set to '0', the status of the WP pin is ignored.
When the WPEN bit is set to '1', a LOW on the WP pin inhibits a
write to the Status Register. Thus the Status Register is
write-protected only when WPEN = '1' and WP = '0'.
Table 5 summarizes the write protection conditions.
Table 5. Write Protection
WEL WPEN WP
Protected Unprotected
Blocks
Blocks
Status
Register
0
X
X
Protected
Protected
Protected
1
0
X
Protected
Unprotected
Unprotected
1
1
0
Protected
Unprotected
Protected
1
1
1
Protected
Unprotected
Unprotected
Page 7 of 22
PRELIMINARY
RDSR - Read Status Register
FM25H20
setting the WPEN, BP0 and BP1 bits as required. Before issuing
a WRSR command, the WP pin must be HIGH or inactive. Note
that on the FM25H20, WP only prevents writing to the Status
Register, not the memory array. Before sending the WRSR
command, the user must send a WREN command to enable
writes. Executing a WRSR command is a write operation and
therefore, clears the Write Enable Latch.
The RDSR command allows the bus master to verify the
contents of the Status Register. Reading the status register
provides information about the current state of the
write-protection features. Following the RDSR opcode, the
FM25H20 will return one byte with the contents of the Status
Register.
WRSR - Write Status Register
The WRSR command allows the SPI bus master to write into the
Status Register and change the write protect configuration by
Figure 9. RDSR Bus Configuration
CS
1
2
3
4
5
6
7
0
SCK
2
3
4
5
6
7
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Opcode
1
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0
0
SI
0
0
0
0
1
0
1
0
Data
HI-Z
SO
D7 D6 D5 D4 D3 D2 D1 D0
MSB
LSB
Figure 10. WRSR Bus Configuration (WREN not shown)
CS
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
Data
Opcode
SI
0
SO
0
0
0
0
0
0
1 D7 X
MSB
X D3 D2 X
X
LSB
HI-Z
Memory Operation
The SPI interface, which is capable of a high clock frequency,
highlights the fast write capability of the F-RAM technology.
Unlike serial flash and EEPROMs, the FM25H20 can perform
sequential writes at bus speed. No page register is needed and
any number of sequential writes may be performed.
Write Operation
All writes to the memory begin with a WREN opcode with CS
being asserted and deasserted. The next opcode is WRITE. The
WRITE opcode is followed by a three-byte address containing
the 18-bit address (A17-A0) of the first data byte to be written into
the memory. The upper six bits of the three-byte address are
ignored. Subsequent bytes are data bytes, which are written
sequentially. Addresses are incremented internally as long as
the bus master continues to issue clocks and keeps CS LOW. If
Document Number: 001-85935 Rev. *G
X
the last address of 3FFFFh is reached, the counter will roll over
to 00000h. Data is written MSB first. The rising edge of CS
terminates a write operation. A write operation is shown in
Figure 11.
Note When a burst write reaches a protected block address, the
automatic address increment stops and all the subsequent data
bytes received for write will be ignored by the device.
EEPROMs use page buffers to increase their write throughput.
This compensates for the technology's inherently slow write
operations. F-RAM memories do not have page buffers because
each byte is written to the F-RAM array immediately after it is
clocked in (after the eighth clock). This allows any number of
bytes to be written without page buffer delays.
Note If the power is lost in the middle of the write operation, only
the last completed byte will be written.
Page 8 of 22
PRELIMINARY
Read Operation
FM25H20
during read data bytes. Subsequent bytes are data bytes, which
are read out sequentially. Addresses are incremented internally
as long as the bus master continues to issue clocks and CS is
LOW. If the last address of 3FFFFh is reached, the counter will
roll over to 00000h. Data is read MSB first. The rising edge of CS
terminates a read operation and tristates the SO pin. A read
operation is shown in Figure 12.
After the falling edge of CS, the bus master can issue a READ
opcode. Following the READ command is a three-byte address
containing the 18-bit address (A17-A0) of the first byte of the
read operation. The upper six bits of the address are ignored.
After the opcode and address are issued, the device drives out
the read data on the next eight clocks. The SI input is ignored
Figure 11. Memory Write (WREN not shown) Operation
CS
1
2
3
4
5
6
7
0
1
2
3
4
5
6
0
0
0
0
0
20 21 22 23 0
1
e
Opcode
SI
7
~
~ ~
~
0
SCK
18-bit Address
0
1
0
X
X
X
X
X
X A17 A16
3
4
5
6
7
Data
A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0
LSB MSB
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MSB
2
LSB
HI-Z
SO
Figure 12. Memory Read Operation
0
1
SCK
2
3
4
5
6
7
0
1
2
3
4
Opcode
SI
0
0
0
0
0
6
7
20 21 22 23 0
1
2
3
4
5
6
7
18-bit Address
0
1
1
X
X
X
MSB
SO
5
~
~ ~
~
CS
X
X
X A17 A16
A3 A2 A1 A0
LSB
D7 D6 D5 D4 D3 D2 D1 D0
MSB
Document Number: 001-85935 Rev. *G
Data
HI-Z
LSB
Page 9 of 22
PRELIMINARY
HOLD Pin Operation
FM25H20
HIGH while SCK is LOW will resume an operation. The
transitions of HOLD must occur while SCK is LOW, but the SCK
and CS pin can toggle during a hold state.
The HOLD pin can be used to interrupt a serial operation without
aborting it. If the bus master pulls the HOLD pin LOW while SCK
is LOW, the current operation will pause. Taking the HOLD pin
~
~
Figure 13. HOLD Operation[2]
~
~
CS
~
~
e
SCK
~
~
Ob
so
let
HOLD
VALID IN
VALID IN
~
~
SI
SO
Sleep Mode
pin. On the next falling edge of CS, the device will return to
normal operation within tREC time. The SO pin remains in a HI-Z
state during the wakeup period. The device does not necessarily
respond to an opcode within the wakeup period. To start the
wakeup procedure, the controller may send a “dummy” read, for
example, and wait the remaining tREC time.
A low-power sleep mode is implemented on the FM25V20
device. The device will enter the low-power state when the
SLEEP opcode B9h is clocked in and a rising edge of CS is
applied. When in sleep mode, the SCK and SI pins are ignored
and SO will be HI-Z, but the device continues to monitor the CS
Figure 14. Sleep Mode Operation
Enters Sleep Mode
t REC Recovers from Sleep Mode
CS
0
1
2
3
4
5
6
7
t SU
SCK
SI
1
0
1
1
1
SO
0
0
1
VALID IN
HI-Z
Note
2. Figure shows HOLD operation for input mode and output mode.
Document Number: 001-85935 Rev. *G
Page 10 of 22
PRELIMINARY
Endurance
cycle through the loop. F-RAM read and write endurance is
virtually unlimited even at a 40-MHz clock rate.
Table 6. Time to Reach Endurance Limit for Repeating
256-byte Loop
SCK Freq
(MHz)
Endurance
Cycles/sec
Endurance
Cycles/year
Years to Reach
Limit
40
153,848
4.85 × 1012
20.6
76,924
2.43 ×
1012
41.2
1.21 ×
1012
82.4
6.06 ×
1011
164.8
20
10
5
38,462
19,231
Ob
so
let
e
The FM25H20 devices are capable of being accessed at least
1014 times, reads or writes. An F-RAM memory operates with a
read and restore mechanism. Therefore, an endurance cycle is
applied on a row basis for each access (read or write) to the
memory array. The F-RAM architecture is based on an array of
rows and columns of 32K rows of 64-bits each. The entire row is
internally accessed each time a byte in that row is read or written.
All 8 bytes in the row are counted separately for each access in
an endurance calculation. Table 7 shows endurance calculations
for a 256-byte repeating loop, which includes an opcode, a
starting address (3 bytes), and a sequential 256-byte data
stream. This causes each byte to experience eight endurance
FM25H20
Document Number: 001-85935 Rev. *G
Page 11 of 22
PRELIMINARY
FM25H20
Maximum Ratings
Surface mount lead soldering
temperature (3 seconds) ......................................... +260 C
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
DC output current (1 output at a time, 1s duration) .... 15 mA
Storage temperature ................................ –55 C to +125 C
Electrostatic Discharge Voltage
Human Body Model (JEDEC Std JESD22-A114-B) .............. 2 kV
Maximum junction temperature ................................... 95 C
Charged Device Model (JEDEC Std JESD22-C101-A) .......... 1 kV
Supply voltage on VDD relative to VSS .........–1.0 V to +4.5 V
Machine Model (JEDEC Std JESD22-A115-A) ...................... 200 V
Input voltage ........... –1.0 V to +4.5 V and VIN < VDD + 1.0 V
Latch-up current ...................................................... > 50 mA
DC voltage applied to outputs
in High-Z state .................................... –0.5 V to VDD + 0.5 V
Operating Range
Package power dissipation
capability (TA = 25 °C) ................................................. 1.0 W
Ambient Temperature (TA)
VDD
–40 C to +85 C
2.7 V to 3.6 V
Industrial
Ob
so
let
DC Electrical Characteristics
Range
e
Transient voltage (< 20 ns) on
any pin to ground potential ................. –2.0 V to VDD + 2.0 V
Over the Operating Range
Parameter
VDD
Power supply
IDD
VDD supply current
ISB
IZZ
Min
Typ[3]
Max
Unit
2.7
3.3
3.6
V
–
–
1
mA
–
–
10
mA
CS = VDD. All other TA = 25 C
inputs VSS or VDD.
TA = 85 C
–
80
150
A
–
–
270
A
TA = 25 C
CS = VDD.
All other inputs VSS or
TA = 85 C
VDD.
–
3
5
A
–
–
8
A
Description
VDD standby current
Sleep mode current
Test Conditions
SCK
toggling fSCK = 1 MHz;
between VDD – 0.2 V
f
= 40 MHz;
and VSS, other inputs SCK
VSS or VDD – 0.2 V.
SO = Open
ILI
Input leakage current
VSS < VIN < VDD
–
–
±1
A
ILO
Output leakage current
VSS < VOUT < VDD
–
–
±1
A
VIH
Input HIGH voltage
0.7 × VDD
–
VDD + 0.5
V
VIL
Input LOW voltage
– 0.4
–
0.3 × VDD
V
VOH
Output HIGH voltage
IOH = –100 A
VDD – 0.2
–
–
V
VOL
Output LOW voltage
IOL = 1.6 mA
–
–
0.4
V
Note
3. Typical values are at 25 °C, VDD = VDD (typ). Not 100% tested.
Document Number: 001-85935 Rev. *G
Page 12 of 22
PRELIMINARY
FM25H20
Data Retention and Endurance
Parameter
TDR
NVC
Description
Data retention
Endurance
Test condition
Min
Max
Unit
TA = 85 C
10
–
Years
TA = 75 C
38
–
TA = 65 C
151
–
14
–
Over operating temperature
10
Cycles
Capacitance
Description
Output pin capacitance (SO)
CI
Input pin capacitance
TA = 25 C, f = 1 MHz, VDD = VDD(typ)
Ob
so
let
CO
Test Conditions
e
Parameter [4]
Max
Unit
8
pF
6
pF
Thermal Resistance
Parameter
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
8-pin SOIC
8-pin TDFN
Unit
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA / JESD51.
112
16
C/W
37
10
C/W
AC Test Conditions
Input pulse levels .................................10% and 90% of VDD
Input rise and fall times ...................................................3 ns
Input and output timing reference levels ................0.5 × VDD
Output load capacitance .............................................. 30 pF
Note
4. This parameter is characterized but not 100% tested.
Document Number: 001-85935 Rev. *G
Page 13 of 22
PRELIMINARY
FM25H20
AC Switching Characteristics
Over the Operating Range
Parameters [5]
Cypress
Parameter
VDD = 2.7 V to 3.6 V
Description
Alt. Parameter
Min
Max
Unit
–
SCK clock frequency
0
40
MHz
tCH
–
Clock HIGH time
11
–
ns
tCL
–
Clock LOW time
11
–
ns
tCSU
tCSS
Chip select setup
10
–
ns
tCSH
tCSH
Chip select hold
10
–
ns
tHZCS
Output disable time
–
12
ns
tODV
tCO
Output data valid time
–
9
ns
tOH
–
Output hold time
0
–
ns
tD
–
Deselect time
40
–
ns
Data in rise time
–
50
ns
Data in fall time
–
50
ns
Data setup time
5
–
ns
Data hold time
5
–
ns
HOLD setup time
10
–
ns
HOLD hold time
10
–
ns
HOLD LOW to HI-Z
–
20
ns
HOLD HIGH to data active
–
20
ns
[8, 9]
–
tF[8, 9]
–
tSU
tSD
tH
tHD
tHS
tSH
tHH
tHH
tHZ[6, 7]
tLZ[7]
tHHZ
tR
tHLZ
Ob
so
let
tOD
[6, 7]
e
fSCK
Notes
5. Test conditions assume a signal transition time of 3 ns or less, timing reference levels of 0.5 × VDD, input pulse levels of 10% to 90% of VDD, and output loading of
the specified IOL/IOH and 30 pF load capacitance shown in AC Test Conditions on page 13.
6. tOD and tHZ are specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state
7. This parameter is characterized but not 100% tested.
8. Rise and fall times measured between 10% and 90% of waveform.
9. These parameters are guaranteed by design and are not tested.
Document Number: 001-85935 Rev. *G
Page 14 of 22
PRELIMINARY
FM25H20
Figure 15. Synchronous Data Timing (Mode 0)
tD
CS
tCSU
tCH
tCL
tCSH
SCK
tSU
SI
tH
VALID IN
VALID IN
VALID IN
tOH
tODV
HI-Z
HI-Z
e
SO
tOD
SCK
~
~
tHH
~
~
CS
Ob
so
let
Figure 16. HOLD Timing
tHS
SI
~
~
tHS
VALID IN
tHZ
Document Number: 001-85935 Rev. *G
VALID IN
tLZ
~
~
SO
tSU
~
~
HOLD
tHH
Page 15 of 22
PRELIMINARY
FM25H20
Power Cycle Timing
Over the Operating Range
Parameter
Description
Min
Max
Unit
Power-up VDD(min) to first access (CS LOW)
1
–
ms
tPD
Last access (CS HIGH) to power-down (VDD(min))
0
–
µs
tVR [10]
VDD power-up ramp rate
50
–
µs/V
tVF [10]
VDD power-down ramp rate
100
–
µs/V
tREC [11]
Recovery time from sleep mode
–
450
µs
e
tPU
Ob
so
let
~
~
Figure 17. Power Cycle Timing
VDD
VDD(min)
tVR
CS
tVF
tPD
~
~
tPU
VDD(min)
Notes
10. Slope measured at any point on the VDD waveform.
11. Guaranteed by design. Refer to Figure 14 for sleep mode recovery timing.
Document Number: 001-85935 Rev. *G
Page 16 of 22
PRELIMINARY
FM25H20
Ordering Information
Ordering Code
Package
Diagram
Package Type
FM25H20-G
001-85261
8-pin SOIC
FM25H20-GTR
001-85261
8-pin SOIC
FM25H20-DG
001-85579
8-pin TDFN
FM25H20-DGTR
001-85579
8-pin TDFN
Operating
Range
Industrial
All these parts are Pb-free. Contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
H
20 - DG TR
e
FM 25
Option:
blank = Standard; TR = Tape and Reel
Ob
so
let
Package Type:
G = 8-pin SOIC; DG = 8-pin TDFN
Density: 20 = 2-Mbit
Voltage: H = 2.7 V to 3.6 V
SPI F-RAM
Cypress
Document Number: 001-85935 Rev. *G
Page 17 of 22
PRELIMINARY
FM25H20
Package Diagrams
Ob
so
let
e
Figure 18. 8-pin SOIC (208 Mils) Package Outline, 001-85261
001-85261 **
Document Number: 001-85935 Rev. *G
Page 18 of 22
PRELIMINARY
FM25H20
Package Diagrams (continued)
Ob
so
let
e
Figure 19. 8-pin DFN (5 mm × 6 mm × 0.75 mm) Package Outline, 001-85579
001-85579 *A
Document Number: 001-85935 Rev. *G
Page 19 of 22
PRELIMINARY
Acronyms
FM25H20
Document Conventions
Acronym
Description
Units of Measure
CPHA
Clock Phase
CPOL
Clock Polarity
°C
degree Celsius
EEPROM
Electrically Erasable Programmable Read-Only
Memory
Hz
hertz
kHz
kilohertz
EIA
Electronic Industries Alliance
k
kilohm
F-RAM
Ferroelectric Random Access Memory
Mbit
megabit
I/O
Input/Output
MHz
megahertz
JEDEC
Joint Electron Devices Engineering Council
A
microampere
JESD
JEDEC Standards
F
microfarad
LSB
Least Significant Bit
s
microsecond
mA
milliampere
ms
millisecond
ns
nanosecond
ohm
%
percent
pF
picofarad
V
volt
W
watt
RoHS
Restriction of Hazardous Substances
SPI
Serial Peripheral Interface
SOIC
Small Outline Integrated Circuit
TDFN
Thin Dual Flat No-lead
e
Most Significant Bit
Unit of Measure
Ob
so
let
MSB
Symbol
Document Number: 001-85935 Rev. *G
Page 20 of 22
PRELIMINARY
FM25H20
Document History Page
Document Title: FM25H20, 2-Mbit (256 K × 8) Serial (SPI) F-RAM
Document Number: 001-85935
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
3902952
GVCH
02/25/13
New spec
*A
3924836
GVCH
03/07/13
Move datasheet to external web
*B
3994285
GVCH
05/14/2013
Added Appendix A - Errata for FM25H20
*C
4045438
GVCH
06/30/2013
All errata items are fixed and the errata is removed.
*D
4226252
GVCH
01/24/2014
Converted to Cypress standard format
Description of Change
e
Updated Pinouts
- Updated Figure 2 (Added EXPOSED PAD details)
Ob
so
let
Updated Pin Definitions
- Added EXPOSED PAD details.
Updated Maximum Ratings table
- Removed Moisture Sensitivity Level (MSL)
- Added junction temperature and latch up current
Updated Data Retention and Endurance table
- Added data retention value at 65 C and 75 C temperature
Added Thermal Resistance table
Updated Package Diagrams:
Removed Package Marking Scheme (top mark).
Updated Figure 19.
Removed Ramtron revision history.
Completing Sunset Review.
Added watermark as “Not Recommended for New Designs”.
*E
4462384
*F
4574376
*G
4785411
GVCH
07/31/2014
Updated Package Diagrams:
spec 001-85579 – Changed revision from ** to *A.
GVCH
11/19/2014
Added related documentation hyperlink in page 1.
GVCH
06/03/2015
Obsolete document.
Document Number: 001-85935 Rev. *G
Page 21 of 22
PRELIMINARY
FM25H20
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC® Solutions
Automotive
cypress.com/go/automotive
Clocks & Buffers
cypress.com/go/clocks
Interface
cypress.com/go/interface
Lighting & Power Control
cypress.com/go/powerpsoc
cypress.com/go/plc
PSoC
Touch Sensing
USB Controllers
Wireless/RF
cypress.com/go/memory
cypress.com/go/psoc
cypress.com/go/touch
cypress.com/go/USB
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP
Cypress Developer Community
Community | Forums | Blogs | Video | Training
Technical Support
cypress.com/go/support
Ob
so
let
Memory
psoc.cypress.com/solutions
e
Products
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2013-2015. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-85935 Rev. *G
Revised June 3, 2015
All products and company names mentioned in this document may be the trademarks of their respective holders.
Page 22 of 22
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