FM25L16B-GTR

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Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.com FM25L16B 16-Kbit (2K × 8) Serial (SPI) F-RAM 16-Kbit (2K × 8) Serial (SPI) F-RAM Features Functional Description ■ 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See Data Retention and Endurance on page 12) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process The FM25L16B is a 16-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. ■ Very fast serial peripheral interface (SPI) ❐ Up to 20 MHz frequency ❐ Direct hardware replacement for serial flash and EEPROM ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1) ■ Sophisticated write protection scheme ❐ Hardware protection using the Write Protect (WP) pin ❐ Software protection using Write Disable instruction ❐ Software block protection for 1/4, 1/2, or entire array Unlike serial flash and EEPROM, the FM25L16B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. The FM25L16B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. ■ Low power consumption ❐ 200 A active current at 1 MHz ❐ 3 A (typ) standby current ■ Low-voltage operation: VDD = 2.7 V to 3.6 V ■ Industrial temperature: –40 C to +85 C ■ Packages ❐ 8-pin small outline integrated circuit (SOIC) package ❐ 8-pin thin dual flat no leads (DFN) package ■ Restriction of hazardous substances (RoHS) compliant These capabilities make the FM25L16B ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss. The FM25L16B provides substantial benefits to users of serial EEPROM or flash as a hardware drop-in replacement. The FM25L16B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. The device specifications are guaranteed over an industrial temperature range of –40 C to +85 C. For a complete list of related documentation, click here. Logic Block Diagram WP Instruction Decoder Clock Generator Control Logic Write Protect CS HOLD SCK 2Kx8 F-RAM Array Instruction Register Address Register Counter 11 8 SI Data I/O Register SO 3 Nonvolatile Status Register Cypress Semiconductor Corporation Document Number: 001-84485 Rev. *J • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised November 12, 2018 FM25L16B Contents Pinouts .............................................................................. 3 Pin Definitions .................................................................. 3 Functional Overview ........................................................ 4 Memory Architecture ........................................................ 4 Serial Peripheral Interface – SPI Bus .............................. 4 SPI Overview ............................................................... 4 SPI Modes ................................................................... 5 Power Up to First Access ............................................ 6 Command Structure .................................................... 6 WREN - Set Write Enable Latch ................................. 6 WRDI - Reset Write Enable Latch ............................... 6 Status Register and Write Protection ............................. 6 RDSR - Read Status Register ..................................... 7 WRSR - Write Status Register .................................... 7 Memory Operation ............................................................ 8 Write Operation ........................................................... 8 Read Operation ........................................................... 8 HOLD Pin Operation ................................................... 9 Endurance ................................................................. 10 Maximum Ratings ........................................................... 11 Operating Range ............................................................. 11 Document Number: 001-84485 Rev. *J DC Electrical Characteristics ........................................ 11 Data Retention and Endurance ..................................... 12 Capacitance .................................................................... 12 Thermal Resistance ........................................................ 12 AC Test Conditions ........................................................ 12 AC Switching Characteristics ....................................... 13 Power Cycle Timing ....................................................... 15 Ordering Information ...................................................... 16 Ordering Code Definitions ......................................... 16 Package Diagrams .......................................................... 17 Acronyms ........................................................................ 19 Document Conventions ................................................. 19 Units of Measure ....................................................... 19 Document History Page ................................................. 20 Sales, Solutions, and Legal Information ...................... 22 Worldwide Sales and Design Support ....................... 22 Products .................................................................... 22 PSoC® Solutions ...................................................... 22 Cypress Developer Community ................................. 22 Technical Support ..................................................... 22 Page 2 of 22 FM25L16B Pinouts Figure 1. 8-pin SOIC pinout CS 1 SO 2 WP 3 VSS 4 Top View not to scale 8 VDD 7 HOLD 6 SCK 5 SI Figure 2. 8-pin DFN pinout O CS 1 SO 2 8 VDD 7 HOLD EXPOSED PAD WP 3 6 SCK VSS 4 5 SI Top View not to scale Pin Definitions Pin Name I/O Type Description CS Input Chip Select. This active LOW input activates the device. When HIGH, the device enters low-power standby mode, ignores other inputs, and tristates the output. When LOW, the device internally activates the SCK signal. A falling edge on CS must occur before every opcode. SCK Input Serial Clock. All I/O activity is synchronized to the serial clock. Inputs are latched on the rising edge and outputs occur on the falling edge. Because the device is synchronous, the clock frequency may be any value between 0 and 20 MHz and may be interrupted at any time. SI[1] Input Serial Input. All data is input to the device on this pin. The pin is sampled on the rising edge of SCK and is ignored at other times. It should always be driven to a valid logic level to meet IDD specifications. SO[1] Output Serial Output. This is the data output pin. It is driven during a read and remains tristated at all other times including when HOLD is LOW. Data transitions are driven on the falling edge of the serial clock. WP Input Write Protect. This active LOW pin prevents write operation to the Status Register when WPEN is set to ‘1’. This is critical because other write protection features are controlled through the Status Register. A complete explanation of write protection is provided in Status Register and Write Protection on page 7. This pin must be tied to VDD if not used. HOLD Input HOLD Pin. The HOLD pin is used when the host CPU must interrupt a memory operation for another task. When HOLD is LOW, the current operation is suspended. The device ignores any transition on SCK or CS. All transitions on HOLD must occur while SCK is LOW. This pin must be tied to VDD if not used. VSS Power supply Ground for the device. Must be connected to the ground of the system. VDD Power supply Power supply input to the device. EXPOSED PAD No connect The EXPOSED PAD on the bottom of 8-pin DFN package is not connected to the die. The EXPOSED PAD should not be soldered on the PCB. Note 1. SI may be connected to SO for a single pin data interface. Document Number: 001-84485 Rev. *J Page 3 of 22 FM25L16B Functional Overview The FM25L16B is a serial F-RAM memory. The memory array is logically organized as 2,048 × 8 bits and is accessed using an industry standard serial peripheral interface (SPI) bus. The functional operation of the F-RAM is similar to serial flash and serial EEPROMs. The major difference between the FM25L16B and a serial flash or EEPROM with the same pinout is the F-RAM's superior write performance, high endurance, and low power consumption. Memory Architecture When accessing the FM25L16B, the user addresses 2K locations of eight data bits each. These eight data bits are shifted in or out serially. The addresses are accessed using the SPI protocol, which includes a chip select (to permit multiple devices on the bus), an opcode, and a two-byte address. The upper 5 bits of the address range are 'don't care' values. The complete address of 11 bits specifies each byte address uniquely. Most functions of the FM25L16B are either controlled by the SPI interface or handled by on-board circuitry. The access time for the memory operation is essentially zero, beyond the time needed for the serial protocol. That is, the memory is read or written at the speed of the SPI bus. Unlike a serial flash or EEPROM, it is not necessary to poll the device for a ready condition because writes occur at bus speed. By the time a new bus transaction can be shifted into the device, a write operation is complete. This is explained in more detail in the interface section. Note The FM25L16B contains no power management circuits other than a simple internal power-on reset circuit. It is the user’s responsibility to ensure that VDD is within datasheet tolerances to prevent incorrect operation. It is recommended that the part is not powered down with chip enable active. Serial Peripheral Interface – SPI Bus The FM25L16B is a SPI slave device and operates at speeds up to 20 MHz. This high-speed serial bus provides high-performance serial communication to a SPI master. Many common microcontrollers have hardware SPI ports allowing a direct interface. It is quite simple to emulate the port using ordinary port pins for microcontrollers that do not. The FM25L16B operates in SPI Mode 0 and 3. SPI Overview The SPI is a four-pin interface with Chip Select (CS), Serial Input (SI), Serial Output (SO), and Serial Clock (SCK) pins. The SPI is a synchronous serial interface, which uses clock and data pins for memory access and supports multiple devices on the data bus. A device on the SPI bus is activated using the CS pin. The relationship between chip select, clock, and data is dictated by the SPI mode. This device supports SPI modes 0 and 3. In both of these modes, data is clocked into the F-RAM on the rising Document Number: 001-84485 Rev. *J edge of SCK starting from the first rising edge after CS goes active. The SPI protocol is controlled by opcodes. These opcodes specify the commands from the bus master to the slave device. After CS is activated, the first byte transferred from the bus master is the opcode. Following the opcode, any addresses and data are then transferred. The CS must go inactive after an operation is complete and before a new opcode can be issued. The commonly used terms in the SPI protocol are as follows: SPI Master The SPI master device controls the operations on a SPI bus. An SPI bus may have only one master with one or more slave devices. All the slaves share the same SPI bus lines and the master may select any of the slave devices using the CS pin. All of the operations must be initiated by the master activating a slave device by pulling the CS pin of the slave LOW. The master also generates the SCK and all the data transmission on SI and SO lines are synchronized with this clock. SPI Slave The SPI slave device is activated by the master through the Chip Select line. A slave device gets the SCK as an input from the SPI master and all the communication is synchronized with this clock. An SPI slave never initiates a communication on the SPI bus and acts only on the instruction from the master. The FM25L16B operates as an SPI slave and may share the SPI bus with other SPI slave devices. Chip Select (CS) To select any slave device, the master needs to pull down the corresponding CS pin. Any instruction can be issued to a slave device only while the CS pin is LOW. When the device is not selected, data through the SI pin is ignored and the serial output pin (SO) remains in a high-impedance state. Note A new instruction must begin with the falling edge of CS. Therefore, only one opcode can be issued for each active Chip Select cycle. Serial Clock (SCK) The Serial Clock is generated by the SPI master and the communication is synchronized with this clock after CS goes LOW. The FM25L16B enables SPI modes 0 and 3 for data communication. In both of these modes, the inputs are latched by the slave device on the rising edge of SCK and outputs are issued on the falling edge. Therefore, the first rising edge of SCK signifies the arrival of the first bit (MSB) of a SPI instruction on the SI pin. Further, all data inputs and outputs are synchronized with SCK. Data Transmission (SI/SO) The SPI data bus consists of two lines, SI and SO, for serial data communication. SI is also referred to as Master Out Slave In (MOSI) and SO is referred to as Master In Slave Out (MISO). The master issues instructions to the slave through the SI pin, while Page 4 of 22 FM25L16B these three bits are ‘don’t care’, Cypress recommends that these bits be set to 0s to enable seamless transition to higher memory densities. the slave responds through the SO pin. Multiple slave devices may share the SI and SO lines as described earlier. The FM25L16B has two separate pins for SI and SO, which can be connected with the master as shown in Figure 3. Serial Opcode For a microcontroller that has no dedicated SPI bus, a general-purpose port may be used. To reduce hardware resources on the controller, it is possible to connect the two data pins (SI, SO) together and tie off (HIGH) the HOLD and WP pins. Figure 4 shows such a configuration, which uses only three pins. After the slave device is selected with CS going LOW, the first byte received is treated as the opcode for the intended operation. FM25L16B uses the standard opcodes for memory accesses. Invalid Opcode If an invalid opcode is received, the opcode is ignored and the device ignores any additional serial data on the SI pin until the next falling edge of CS, and the SO pin remains tristated. Most Significant Bit (MSB) The SPI protocol requires that the first bit to be transmitted is the Most Significant Bit (MSB). This is valid for both address and data transmission. Status Register The 16-Kbit serial F-RAM requires a 2-byte address for any read or write operation. Because the address is only 11 bits, the first five bits which are fed in are ignored by the device. Although FM25L16B has an 8-bit Status Register. The bits in the Status Register are used to configure the device. These bits are described in Table 3 on page 7. Figure 3. System Configuration with SPI port SCK MOSI MISO SCK SPI Microcontroller SI SO FM25L16B CS HOLD WP SCK SI SO FM25L16B CS HOLD WP CS1 HO LD 1 WP1 CS2 HO LD 2 WP2 Figure 4. System Configuration without SPI port P1.0 P1.1 SCK SI SO Microcontroller FM25L16B CS HOLD WP P1.2 SPI Modes FM25L16B may be driven by a microcontroller with its SPI peripheral running in either of the following two modes: ■ SPI Mode 0 (CPOL = 0, CPHA = 0) ■ SPI Mode 3 (CPOL = 1, CPHA = 1) Document Number: 001-84485 Rev. *J For both these modes, the input data is latched in on the rising edge of SCK starting from the first rising edge after CS goes active. If the clock starts from a HIGH state (in mode 3), the first rising edge after the clock toggles is considered. The output data is available on the falling edge of SCK. Page 5 of 22 FM25L16B The two SPI modes are shown in Figure 5 and Figure 6. The status of the clock when the bus master is not transferring data is: ■ SCK remains at 0 for Mode 0 ■ SCK remains at 1 for Mode 3 The device detects the SPI mode from the status of the SCK pin when the device is selected by bringing the CS pin LOW. If the SCK pin is LOW when the device is selected, SPI Mode 0 is assumed and if the SCK pin is HIGH, it works in SPI Mode 3. Figure 5. SPI Mode 0 CS 0 1 2 3 5 4 6 7 SCK SI 7 6 5 4 3 2 1 The FM25L16B will power up with writes disabled. The WREN command must be issued before any write operation. Sending the WREN opcode allows the user to issue subsequent opcodes for write operations. These include writing the Status Register (WRSR) and writing the memory (WRITE). Sending the WREN opcode causes the internal Write Enable Latch to be set. A flag bit in the Status Register, called WEL, indicates the state of the latch. WEL = ‘1’ indicates that writes are permitted. Attempting to write the WEL bit in the Status Register has no effect on the state of this bit – only the WREN opcode can set this bit. The WEL bit will be automatically cleared on the rising edge of CS following a WRDI, a WRSR, or a WRITE operation. This prevents further writes to the Status Register or the F-RAM array without another WREN command. Figure 7 illustrates the WREN command bus configuration. Figure 7. WREN Bus Configuration 0 MSB WREN - Set Write Enable Latch CS LSB 0 Figure 6. SPI Mode 3 SI CS 0 1 2 3 4 5 6 7 SCK 1 2 3 4 5 6 7 0 0 0 0 1 1 0 HI-Z SO SCK 0 WRDI - Reset Write Enable Latch SI 7 6 5 4 3 MSB 2 1 The WRDI command disables all write activity by clearing the Write Enable Latch. The user can verify that writes are disabled by reading the WEL bit in the Status Register and verifying that WEL is equal to ‘0’. Figure 8 illustrates the WRDI command bus configuration. 0 LSB Power Up to First Access The FM25L16B is not accessible for a tPU time after power up. Users must comply with the timing parameter tPU, which is the minimum time from VDD (min) to the first CS LOW. CS Command Structure There are six commands, called opcodes, that can be issued by the bus master to the FM25L16B. They are listed in Table 1. These opcodes control the functions performed by the memory. Name Description Set write enable latch Opcode 0000 0110b WRDI Write disable 0000 0100b RDSR Read Status Register 0000 0101b WRSR Write Status Register 0000 0001b READ Read memory data 0000 0011b WRITE Write memory data 0000 0010b Document Number: 001-84485 Rev. *J 0 1 2 3 4 5 6 7 SCK SI Table 1. Opcode commands WREN Figure 8. WRDI Bus Configuration SO 0 0 0 0 0 1 0 0 HI-Z Page 6 of 22 FM25L16B Status Register and Write Protection The write protection features of the FM25L16B are multi-tiered and are enabled through the status register. The Status Register is organized as follows. (The default value shipped from the factory for bits in the Status Register is ‘0’.) Table 2. Status Register Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 WPEN (0) X (0) X (0) X (0) BP1 (0) BP0 (0) WEL (0) X (0) Table 3. Status Register Bit Definition Bit Definition Description Bit 0 Don’t care This bit is non-writable and always returns ‘0’ upon read. Bit 1 (WEL) Write Enable Latch WEL indicates if the device is write enabled. This bit defaults to ‘0’ (disabled) on power-up. WEL = ‘1’ --> Write enabled WEL = ‘0’ --> Write disabled Bit 2 (BP0) Block Protect bit ‘0’ Used for block protection. For details, see Table 4. Bit 3 (BP1) Block Protect bit ‘1’ Used for block protection. For details, see Table 4. Bit 4-6 Don’t care These bits are non-writable and always return ‘0’ upon read. Bit 7 (WPEN) Write Protect Enable bit Used to enable the function of Write Protect Pin (WP). For details, see Table 5. Bits 0 and 4-6 are fixed at ‘0’; none of these bits can be modified. Note that bit 0 (“Ready or Write in progress” bit in serial flash and EEPROM) is unnecessary, as the F-RAM writes in real-time and is never busy, so it reads out as a ‘0’. The BP1 and BP0 control the software write-protection features and are nonvolatile bits. The WEL flag indicates the state of the Write Enable Latch. Attempting to directly write the WEL bit in the Status Register has no effect on its state. This bit is internally set and cleared via the WREN and WRDI commands, respectively. BP1 and BP0 are memory block write protection bits. They specify portions of memory that are write-protected as shown in Table 4. Table 4. Block Memory Write Protection BP1 BP0 Protected Address Range 0 0 None 0 1 600h to 7FFh (upper 1/4) 1 0 400h to 7FFh (upper 1/2) 1 1 000h to 7FFh (all) The BP1 and BP0 bits and the Write Enable Latch are the only mechanisms that protect the memory from writes. The remaining write protection features protect inadvertent changes to the block protect bits. The write protect enable bit (WPEN) in the Status Register controls the effect of the hardware write protect (WP) pin. When the WPEN bit is set to ‘0’, the status of the WP pin is ignored. When the WPEN bit is set to ‘1’, a LOW on the WP pin inhibits a Document Number: 001-84485 Rev. *J write to the Status Register. Thus the Status Register is write-protected only when WPEN = ‘1’ and WP = ‘0’. Table 5 summarizes the write protection conditions. Table 5. Write Protection WEL WPEN WP Protected Unprotected Blocks Blocks Status Register 0 X X Protected Protected Protected 1 0 X Protected Unprotected Unprotected 1 1 0 Protected Unprotected Protected 1 1 1 Protected Unprotected Unprotected RDSR - Read Status Register The RDSR command allows the bus master to verify the contents of the Status Register. Reading the status register provides information about the current state of the write-protection features. Following the RDSR opcode, the FM25L16B will return one byte with the contents of the Status Register. WRSR - Write Status Register The WRSR command allows the SPI bus master to write into the Status Register and change the write protect configuration by setting the WPEN, BP0 and BP1 bits as required. Before issuing a WRSR command, the WP pin must be HIGH or inactive. Note that on the FM25L16B, WP only prevents writing to the Status Register, not the memory array. Before sending the WRSR command, the user must send a WREN command to enable writes. Executing a WRSR command is a write operation and therefore, clears the Write Enable Latch. Page 7 of 22 FM25L16B Figure 9. RDSR Bus Configuration CS 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SCK Opcode SI 0 0 0 0 0 1 0 1 0 Data HI-Z SO D7 D6 D5 D4 D3 D2 D1 D0 MSB LSB Figure 10. WRSR Bus Configuration (WREN not shown) CS 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 SCK Data Opcode SI 0 SO 0 0 0 0 0 0 1 D7 X MSB X X D3 D2 X X LSB HI-Z Memory Operation operations. F-RAM memories do not have page buffers because each byte is written to the F-RAM array immediately after it is clocked in (after the eighth clock). This allows any number of bytes to be written without page buffer delays. The SPI interface, which is capable of a high clock frequency, highlights the fast write capability of the F-RAM technology. Unlike serial flash and EEPROMs, the FM25L16B can perform sequential writes at bus speed. No page register is needed and any number of sequential writes may be performed. Note If the power is lost in the middle of the write operation, only the last completed byte will be written. Write Operation Read Operation All writes to the memory begin with a WREN opcode. The WRITE opcode is followed by a two-byte address containing the 11-bit address (A10–A0) of the first data byte to be written into the memory. The upper five bits of the two-byte address are ignored. Subsequent bytes are data bytes, which are written sequentially. Addresses are incremented internally as long as the bus master continues to issue clocks and keeps CS LOW. If the last address of 7FFh is reached, the counter will roll over to 000h. Data is written MSB first. The rising edge of CS terminates a write operation. A write operation is shown in Figure 11 on page 9. After the falling edge of CS, the bus master can issue a READ opcode. Following the READ command is a two-byte address containing the 11-bit address (A10–A0) of the first byte of the read operation. The upper five bits of the address are ignored. After the opcode and address are issued, the device drives out the read data on the next eight clocks. The SI input is ignored during read data bytes. Subsequent bytes are data bytes, which are read out sequentially. Addresses are incremented internally as long as the bus master continues to issue clocks and CS is LOW. If the last address of 7FFh is reached, the counter will roll over to 000h. Data is read MSB first. The rising edge of CS terminates a read operation and tristates the SO pin. A read operation is shown in Figure 12 on page 9. Note When a burst write reaches a protected block address, the automatic address increment stops and all the subsequent data bytes received for write will be ignored by the device. EEPROMs use page buffers to increase their write throughput. This compensates for the technology’s inherently slow write Document Number: 001-84485 Rev. *J Page 8 of 22 FM25L16B Figure 11. Memory Write (WREN not shown) CS 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 Opcode SI 0 0 0 0 0 ~ ~ ~ ~ 0 SCK 12 13 14 15 0 1 1 0 X X X X X A10 A9 A8 MSB 3 4 5 6 7 Data 11-bit Address 0 2 A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 LSB MSB LSB HI-Z SO Figure 12. Memory Read CS 1 2 3 4 5 6 7 0 1 2 3 4 Opcode SI 0 0 0 0 0 5 6 7 ~ ~ ~ ~ 0 SCK 12 13 14 15 0 1 2 3 4 5 6 7 11-bit Address 0 1 1 X X X X X A10 A9 A8 MSB A3 A2 A1 A0 LSB Data HI-Z SO D7 D6 D5 D4 D3 D2 D1 D0 MSB HOLD Pin Operation The HOLD pin can be used to interrupt a serial operation without aborting it. If the bus master pulls the HOLD pin LOW while SCK is LOW, the current operation will pause. Taking the HOLD pin LSB HIGH while SCK is LOW will resume an operation. The transitions of HOLD must occur while SCK is LOW, but the SCK and CS pin can toggle during a hold state. ~ ~ Figure 13. HOLD Operation[2] ~ ~ CS SI VALID IN SO VALID IN ~ ~ HOLD ~ ~ ~ ~ SCK Note 2. Figure shows HOLD operation for input mode and output mode. Document Number: 001-84485 Rev. *J Page 9 of 22 FM25L16B Endurance The FM25L16B devices are capable of being accessed at least 1014 times, reads or writes. An F-RAM memory operates with a read and restore mechanism. Therefore, an endurance cycle is applied on a row basis for each access (read or write) to the memory array. The F-RAM architecture is based on an array of rows and columns of 256 rows of 64-bits each. The entire row is internally accessed once whether a single byte or all eight bytes are read or written. Each byte in the row is counted only once in an endurance calculation. Table 6 shows endurance calculations for a 64-byte repeating loop, which includes an opcode, a starting address, and a sequential 64-byte data stream. This causes each byte to experience one endurance cycle through the loop. Document Number: 001-84485 Rev. *J F-RAM read and write endurance is virtually unlimited even at a 20 MHz clock rate. Table 6. Time to Reach Endurance Limit for Repeating 64-byte Loop SCK Freq (MHz) Endurance Cycles/sec Endurance Cycles/year Years to Reach Limit 20 37,310 1.18 × 1012 85.1 18,660 5.88 × 10 11 170.2 2.94 × 10 11 340.3 10 5 9,330 Page 10 of 22 FM25L16B Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. These user guidelines are not tested. Storage temperature ................................ –65 C to +125 C Maximum accumulated storage time At 125 °C ambient temperature ................................. 1000 h At 85 °C ambient temperature ................................ 10 Years Ambient temperature with power applied ................................... –55 °C to +125 °C Supply voltage on VDD relative to VSS .........–1.0 V to +5.0 V Package power dissipation capability (TA = 25 °C) ................................................................. 1.0 W Surface mount lead soldering temperature (3 seconds) .............................................................. +260 C DC output current (1 output at a time, 1s duration) .................................. 15 mA Electrostatic Discharge Voltage [3] Human Body Model (AEC-Q100-002 Rev. E) ................... 2 kV Charged Device Model (AEC-Q100-011 Rev. B) .............. 500 V Latch-up current .................................................... > 140 mA Input voltage ............. –1.0 V to +5.0 V and VIN < VDD+1.0 V Operating Range DC voltage applied to outputs in High Z state .................................... –0.5 V to VDD + 0.5 V Industrial Range Ambient Temperature (TA) VDD –40 C to +85 C 2.7 V to 3.6 V Transient voltage (< 20 ns) on any pin to ground potential ............ –2.0 V to VDD + 2.0 V DC Electrical Characteristics Over the Operating Range Parameter Description VDD Power supply IDD VDD supply current Min Typ [4] Max Unit 2.7 3.3 3.6 V fSCK = 1 MHz – – 0.2 mA fSCK = 20 MHz – – 3 mA Test Conditions SCK toggling between VDD – 0.3 V and VSS, other inputs VSS or VDD – 0.3 V. SO = Open. ISB VDD standby current CS = VDD. All other inputs VSS or VDD. – 3 6 A ILI Input leakage current VSS < VIN < VDD – – ±1 A ILO Output leakage current VSS < VOUT < VDD – – ±1 A VIH Input HIGH voltage 0.7 × VDD – VDD + 0.3 V VIL Input LOW voltage – 0.3 – 0.3 × VDD V VOH Output HIGH voltage IOH = –2 mA VDD – 0.8 – – V VOL Output LOW voltage IOL = 2 mA – – 0.4 V VHYS[5] Input Hysteresis (CS and SCK pin) 0.05 × VDD – – V Notes 3. Electrostatic Discharge voltages specified in the datasheet are the JEDEC standard limits used for qualifying the device. To know the maximum value device passes for, please refer to the device qualification report available on the website. 4. Typical values are at 25 °C, VDD = VDD(typ). Not 100% tested. 5. This parameter is characterized and not 100% tested. Document Number: 001-84485 Rev. *J Page 11 of 22 FM25L16B Data Retention and Endurance Parameter TDR NVC Description Data retention Endurance Min Max Unit TA = 85 C Test condition 10 – Years TA = 75 C 38 – TA = 65 C 151 – 14 – Over operating temperature 10 Cycles Capacitance Parameter [6] Description CO Output pin capacitance (SO) CI Input pin capacitance Test Conditions TA = 25 C, f = 1 MHz, VDD = VDD(typ) Max Unit 8 pF 6 pF Thermal Resistance Parameter [6] Description JA Thermal resistance (junction to ambient) JC Thermal resistance (junction to case) Test Conditions 8-pin SOIC 8-pin DFN Unit Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51. 147 19 C/W 47 30 C/W AC Test Conditions Input pulse levels .................................10% and 90% of VDD Input rise and fall times ...................................................5 ns Input and output timing reference levels ................0.5 × VDD Output load capacitance .............................................. 30 pF Note 6. This parameter is characterized and not 100% tested. Document Number: 001-84485 Rev. *J Page 12 of 22 FM25L16B AC Switching Characteristics Over the Operating Range Parameters [7] Cypress Parameter Description Alt. Parameter Min Max Unit fSCK – SCK Clock frequency 0 20 MHz tCH – Clock HIGH time 22 – ns tCL – Clock LOW time 22 – ns tCSU tCSS Chip select setup 10 – ns tCSH tCSH Chip select hold 10 – ns tHZCS Output disable time – 20 ns tODV tCO Output data valid time – 20 ns tOH – Output hold time 0 – ns tD tOD [8, 9] – Deselect time 60 – ns [10, 11] – Data in rise time – 50 ns tF[10, 11] – Data in fall time – 50 ns tSU tSD Data setup time 5 – ns tH tHD Data hold time 5 – ns tHS tSH HOLD setup time 10 – ns tHH tHH HOLD hold time 10 – ns tHZ[8, 9] tLZ[9] tHHZ HOLD LOW to HI-Z – 20 ns tHLZ HOLD HIGH to data active – 20 ns tR Notes 7. Test conditions assume a signal transition time of 5 ns or less, timing reference levels of 0.5 × VDD, input pulse levels of 10% to 90% of VDD, and output loading of the specified IOL/IOH and 30 pF load capacitance shown in AC Test Conditions on page 12. 8. tOD and tHZ are specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state. 9. This parameter is characterized and not 100% tested. 10. Rise and fall times measured between 10% and 90% of waveform. 11. These parameters are guaranteed by design and are not tested. Document Number: 001-84485 Rev. *J Page 13 of 22 FM25L16B Figure 14. Synchronous Data Timing (Mode 0) tD CS tCSU tCH tCL tCSH SCK tSU SI tH VALID IN VALID IN VALID IN tOH tODV SO HI-Z tOD HI-Z CS SCK tHH ~ ~ ~ ~ Figure 15. HOLD Timing tHS ~ ~ tHS VALID IN tHZ Document Number: 001-84485 Rev. *J VALID IN tLZ ~ ~ SO tSU ~ ~ HOLD SI tHH Page 14 of 22 FM25L16B Power Cycle Timing Over the Operating Range Parameter Description Min Max Unit tPU Power-up VDD(min) to first access (CS LOW) 1 – ms tPD Last access (CS HIGH) to power-down (VDD(min)) 0 – µs tVR [12] VDD power-up ramp rate 30 – µs/V tVF [12] VDD power-down ramp rate 30 – µs/V VDD ~ ~ Figure 16. Power Cycle Timing VDD(min) tVR CS tVF tPD ~ ~ tPU VDD(min) Note 12. Slope measured at any point on VDD waveform. Document Number: 001-84485 Rev. *J Page 15 of 22 FM25L16B Ordering Information Package Diagram Ordering Code Package Type FM25L16B-G 51-85066 8-pin SOIC FM25L16B-GTR 51-85066 8-pin SOIC FM25L16B-DG 001-85260 8-pin DFN FM25L16B-DGTR 001-85260 8-pin DFN Operating Range Industrial All these parts are Pb-free. Contact your local Cypress sales representative for availability of these parts. Ordering Code Definitions FM 25 L 16 B - X X Option: X = blank or TR blank = Standard; TR = Tape and Reel Package Type: X = G or DG G = 8-pin SOIC; DG = 8-pin DFN Die revision Density: 16 = 16-Kbit Voltage: L = 2.7 V to 3.6 V SPI F-RAM Cypress Document Number: 001-84485 Rev. *J Page 16 of 22 FM25L16B Package Diagrams Figure 17. 8-pin SOIC (150 Mils) Package Outline, 51-85066 51-85066 *I Document Number: 001-84485 Rev. *J Page 17 of 22 FM25L16B Package Diagrams (continued) Figure 18. 8-pin DFN (4.0 mm × 4.5 mm × 0.8 mm) Package Outline, 001-85260 001-85260 *B Document Number: 001-84485 Rev. *J Page 18 of 22 FM25L16B Acronyms Acronym AEC Document Conventions Description Units of Measure Symbol Automotive Electronics Council Unit of Measure CPHA Clock Phase °C CPOL Clock Polarity Hz hertz DFN Dual Flat No-lead kHz kilohertz EEPROM Electrically Erasable Programmable Read-Only Memory K kilohm Kbit kilobit EIA Electronic Industries Alliance kV kilovolt I/O Input/Output MHz megahertz JEDEC Joint Electron Devices Engineering Council A microampere JESD JEDEC Standards s microsecond LSB Least Significant Bit mA milliampere MSB Most Significant Bit ms millisecond F-RAM Ferroelectric Random Access Memory ns nanosecond RoHS Restriction of Hazardous Substances  ohm % percent SPI Serial Peripheral Interface pF picofarad SOIC Small Outline Integrated Circuit V volt W watt Document Number: 001-84485 Rev. *J degree Celsius Page 19 of 22 FM25L16B Document History Page Document Title: FM25L16B, 16-Kbit (2K × 8) Serial (SPI) F-RAM Document Number: 001-84485 Rev. ECN No. Orig. of Change Submission Date Description of Change ** 3902952 GVCH 02/25/2013 New spec. *A 3924523 GVCH 03/07/2013 Updated Power Cycle Timing: Changed minimum value of tPU parameter from 10 ms to 1 ms. *B 3994285 GVCH 05/14/2013 Added Appendix A - Errata for FM25L16B. *C 4045438 GVCH 06/30/2013 All errata items are fixed and the errata is removed. *D 4217167 GVCH 01/28/2014 Updated Pinouts: Updated Figure 2 (Added EXPOSED PAD details). Updated Pin Definitions: Added EXPOSED PAD pin and its corresponding details. Updated Maximum Ratings: Added “Maximum Junction Temperature” and its corresponding details. Added “DC voltage applied to outputs in High-Z state” and its corresponding details. Added “Transient voltage (< 20 ns) on any pin to ground potential” and its corresponding details. Added “Package power dissipation capability (TA = 25 °C)” and its corresponding details. Added “DC output current (1 output at a time, 1s duration)” and its corresponding details. Added “Latch-up Current” and its corresponding details. Removed “Package Moisture Sensitivity Level” and its corresponding details. Updated Data Retention and Endurance: Removed details of TDR parameter corresponding to “TA = +80 °C”. Added details of TDR parameter corresponding to “TA = 65 °C”. Added NVC parameter and its details. Added Thermal Resistance. Updated Package Diagrams: Removed Package Marking Scheme (top mark). Removed “Ramtron Revision History”. Updated to Cypress template. Completing Sunset Review. *E 4569028 GVCH 11/13/2014 Updated Functional Description: Added “For a complete list of related documentation, click here.” at the end. *F 4786822 GVCH 06/04/2015 Replaced “TDFN” with “DFN” in all instances across the document. Updated Pin Definitions: Updated details in “Description” column of “EXPOSED PAD” pin. Updated Package Diagrams: spec 51-85066 – Changed revision from *F to *G. spec 001-85260 – Changed revision from *A to *B. Updated to new template. *G 4878568 ZSK / PSR 08/10/2015 Updated Maximum Ratings: Removed “Maximum junction temperature” and its corresponding details. Added “Maximum accumulated storage time” and its corresponding details. Added “Ambient temperature with power applied” and its corresponding details. Document Number: 001-84485 Rev. *J Page 20 of 22 FM25L16B Document History Page (continued) Document Title: FM25L16B, 16-Kbit (2K × 8) Serial (SPI) F-RAM Document Number: 001-84485 Rev. ECN No. Orig. of Change Submission Date *H 5606837 GVCH 01/27/2017 Updated Maximum Ratings: Updated Electrostatic Discharge Voltage (in compliance with AEC-Q100 standard): Changed value of “Human Body Model” from 4 kV to 2 kV. Changed value of “Charged Device Model” from 1.25 kV to 500 V. Removed “Machine Model” related information. Updated Package Diagrams: spec 51-85066 – Changed revision from *G to *H. Updated to new template. Completing Sunset Review. *I 5713284 GVCH 04/26/2017 Updated Maximum Ratings: Added Note 3 and referred the same note in “Electrostatic Discharge Voltage”. Updated to new template. *J 6237906 GVCH 11/12/2018 Updated Maximum Ratings: Replaced “–55 °C to +125 °C” with “–65 °C to +125 °C” in ratings corresponding to “Storage temperature”. Updated Package Diagrams: spec 51-85066 – Changed revision from *H to *I. Updated to new template. Document Number: 001-84485 Rev. *J Description of Change Page 21 of 22 FM25L16B Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC® Solutions Products ® ® Arm Cortex Microcontrollers Automotive cypress.com/arm cypress.com/automotive Clocks & Buffers Interface cypress.com/clocks cypress.com/interface Internet of Things Memory Microcontrollers cypress.com/iot cypress.com/memory cypress.com/psoc Power Management ICs cypress.com/pmic USB Controllers Wireless Connectivity Cypress Developer Community Community | Projects | Video | Blogs | Training | Components Technical Support cypress.com/support cypress.com/mcu PSoC Touch Sensing PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6 MCU cypress.com/touch cypress.com/usb cypress.com/wireless © Cypress Semiconductor Corporation, 2013–2018. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC (“Cypress”). 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Document Number: 001-84485 Rev. *J Revised November 12, 2018 Page 22 of 22