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FM25V10
1-Mbit (128K × 8) Serial (SPI) F-RAM
1-Mbit (128K × 8) Serial (SPI) F-RAM
Features
Functional Description
■
1-Mbit ferroelectric random access memory (F-RAM) logically
organized as 128K × 8
14
❐ High-endurance 100 trillion (10 ) read/writes
❐ 151-year data retention (See Data Retention and Endurance
on page 16)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
The FM25V10 is a 1-Mbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
■
Very fast serial peripheral interface (SPI)
❐ Up to 40-MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■
Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
Unlike serial flash and EEPROM, the FM25V10 performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25V10 is capable of supporting
1014 read/write cycles, or 100 million times more write cycles
than EEPROM.
■
Device ID and Serial Number
❐ Manufacturer ID and Product ID
❐ Unique Serial Number (FM25VN10)
■
Low power consumption
❐ 300 A active current at 1 MHz
❐ 90 A (typ) standby current
❐ 5 A sleep mode current
■
Low-voltage operation: VDD = 2.0 V to 3.6 V
■
Industrial temperature: –40 C to +85 C
■
Packages
❐ 8-pin small outline integrated circuit (SOIC) package
❐ 8-pin dual flat no-leads (DFN) package
■
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
These capabilities make the FM25V10 ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25V10 provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25V10 uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The
FM25VN10 is offered with a unique serial number that is
read-only and can be used to identify a board or system. Both
the devices incorporates a read-only Device ID that allows the
host to determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
industrial temperature range of –40 C to +85 C.
For a complete list of related documentation, click here.
WP
Instruction Decoder
Clock Generator
Control Logic
Write Protect
CS
HOLD
SCK
128 K x 8
F-RAM Array
Instruction Register
Address Register
Counter
17
8
SI
Data I/O Register
SO
3
Nonvolatile Status
Register
Cypress Semiconductor Corporation
Document Number: 001-84499 Rev. *K
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised November 12, 2018
FM25V10
Contents
Pinouts .............................................................................. 3
Pin Definitions .................................................................. 3
Functional Overview ........................................................ 4
Memory Architecture ........................................................ 4
Serial Peripheral Interface – SPI Bus .............................. 4
SPI Overview ............................................................... 4
SPI Modes ................................................................... 5
Power Up to First Access ............................................ 6
Command Structure .................................................... 6
WREN - Set Write Enable Latch ................................. 6
WRDI - Reset Write Enable Latch ............................... 6
Status Register and Write Protection ............................. 7
RDSR - Read Status Register ..................................... 8
WRSR - Write Status Register .................................... 8
Memory Operation ............................................................ 8
Write Operation ........................................................... 8
Read Operation ........................................................... 9
Fast Read Operation ................................................... 9
HOLD Pin Operation ................................................. 10
Sleep Mode ............................................................... 11
Device ID ................................................................... 11
Unique Serial Number (FM25VN10 only) .................. 12
Function to Calculate CRC ........................................ 13
Endurance ................................................................. 14
Document Number: 001-84499 Rev. *K
Maximum Ratings ........................................................... 15
Operating Range ............................................................. 15
DC Electrical Characteristics ........................................ 15
Data Retention and Endurance ..................................... 16
Capacitance .................................................................... 16
Thermal Resistance ........................................................ 16
AC Test Conditions ........................................................ 16
AC Switching Characteristics ....................................... 17
Power Cycle Timing ....................................................... 19
Ordering Information ...................................................... 20
Ordering Code Definitions ......................................... 20
Package Diagrams .......................................................... 21
Acronyms ........................................................................ 23
Document Conventions ................................................. 23
Units of Measure ....................................................... 23
Document History Page ................................................. 24
Sales, Solutions, and Legal Information ...................... 26
Worldwide Sales and Design Support ....................... 26
Products .................................................................... 26
PSoC® Solutions ...................................................... 26
Cypress Developer Community ................................. 26
Technical Support ..................................................... 26
Page 2 of 26
FM25V10
Pinouts
Figure 1. 8-pin SOIC pinout
CS
1
SO
2
WP
3
VSS
Top View
not to scale
4
8
VDD
7
HOLD
6
SCK
5
SI
Figure 2. 8-pin DFN pinout
O
CS
1
SO
2
8
VDD
7
HOLD
EXPOSED
PAD
WP
3
6
SCK
VSS
4
5
SI
Top View
not to scale
Pin Definitions
Pin Name
I/O Type
Description
CS
Input
Chip Select. This active LOW input activates the device. When HIGH, the device enters low-power
standby mode, ignores other inputs, and the output is tristated. When LOW, the device internally
activates the SCK signal. A falling edge on CS must occur before every opcode.
SCK
Input
Serial Clock. All I/O activity is synchronized to the serial clock. Inputs are latched on the rising edge
and outputs occur on the falling edge. Because the device is synchronous, the clock frequency may
be any value between 0 and 40 MHz and may be interrupted at any time.
SI [1]
Input
Serial Input. All data is input to the device on this pin. The pin is sampled on the rising edge of SCK
and is ignored at other times. It should always be driven to a valid logic level to meet IDD specifications.
SO [1]
Output
Serial Output. This is the data output pin. It is driven during a read and remains tristated at all other
times including when HOLD is LOW. Data transitions are driven on the falling edge of the serial clock.
WP
Input
Write Protect. This Active LOW pin prevents write operation to the Status Register when WPEN is
set to ‘1’. This is critical because other write protection features are controlled through the Status
Register. A complete explanation of write protection is provided in Status Register and Write Protection
on page 7. This pin must be tied to VDD if not used.
HOLD
Input
HOLD Pin. The HOLD pin is used when the host CPU must interrupt a memory operation for another
task. When HOLD is LOW, the current operation is suspended. The device ignores any transition on
SCK or CS. All transitions on HOLD must occur while SCK is LOW. This pin has a weak internal pull-up
(Refer DC Electrical Characteristics on page 15 for RIN spec). However, if it is not used, the HOLD
pin should be tied to VDD.
VSS
Power supply Ground for the device. Must be connected to the ground of the system.
VDD
Power supply Power supply input to the device.
EXPOSED
PAD
No connect
The EXPOSED PAD on the bottom of 8-pin DFN package is not connected to the die. The EXPOSED
PAD should not be soldered on the PCB.
Note
1. SI may be connected to SO for a single pin data interface.
Document Number: 001-84499 Rev. *K
Page 3 of 26
FM25V10
Functional Overview
The FM25V10 is a serial F-RAM memory. The memory array is
logically organized as 131,072 × 8 bits and is accessed using an
industry-standard serial peripheral interface (SPI) bus. The
functional operation of the F-RAM is similar to serial flash and
serial EEPROMs. The major difference between the FM25V10
and a serial flash or EEPROM with the same pinout is the
F-RAM’s superior write performance, high endurance, and low
power consumption.
Memory Architecture
When accessing the FM25V10, the user addresses 64K
locations of eight data bits each. These eight data bits are shifted
in or out serially. The addresses are accessed using the SPI
protocol, which includes a chip select (to permit multiple devices
on the bus), an opcode, and a three-byte address. The upper
7 bits of the address range are 'don't care' values. The complete
address of 17 bits specifies each byte address uniquely.
Most functions of the FM25V10 are either controlled by the SPI
interface or handled by on-board circuitry. The access time for
the memory operation is essentially zero, beyond the time
needed for the serial protocol. That is, the memory is read or
written at the speed of the SPI bus. Unlike a serial flash or
EEPROM, it is not necessary to poll the device for a ready
condition because writes occur at bus speed. By the time a new
bus transaction can be shifted into the device, a write operation
is complete. This is explained in more detail in the interface
section.
Serial Peripheral Interface – SPI Bus
The FM25V10 is a SPI slave device and operates at speeds up
to 40 MHz. This high-speed serial bus provides
high-performance serial communication to a SPI master. Many
common microcontrollers have hardware SPI ports allowing a
direct interface. It is quite simple to emulate the port using
ordinary port pins for microcontrollers that do not. The FM25V10
operates in SPI Mode 0 and 3.
SPI Overview
The SPI is a four-pin interface with Chip Select (CS), Serial Input
(SI), Serial Output (SO), and Serial Clock (SCK) pins.
The SPI is a synchronous serial interface, which uses clock and
data pins for memory access and supports multiple devices on
the data bus. A device on the SPI bus is activated using the CS
pin.
The relationship between chip select, clock, and data is dictated
by the SPI mode. This device supports SPI modes 0 and 3. In
both of these modes, data is clocked into the F-RAM on the rising
edge of SCK starting from the first rising edge after CS goes
active.
The SPI protocol is controlled by opcodes. These opcodes
specify the commands from the bus master to the slave device.
After CS is activated, the first byte transferred from the bus
master is the opcode. Following the opcode, any addresses and
data are then transferred. The CS must go inactive after an
Document Number: 001-84499 Rev. *K
operation is complete and before a new opcode can be issued.
The commonly used terms in the SPI protocol are as follows:
SPI Master
The SPI master device controls the operations on a SPI bus. An
SPI bus may have only one master with one or more slave
devices. All the slaves share the same SPI bus lines and the
master may select any of the slave devices using the CS pin. All
of the operations must be initiated by the master activating a
slave device by pulling the CS pin of the slave LOW. The master
also generates the SCK and all the data transmission on SI and
SO lines are synchronized with this clock.
SPI Slave
The SPI slave device is activated by the master through the Chip
Select line. A slave device gets the SCK as an input from the SPI
master and all the communication is synchronized with this
clock. An SPI slave never initiates a communication on the SPI
bus and acts only on the instruction from the master.
The FM25V10 operates as an SPI slave and may share the SPI
bus with other SPI slave devices.
Chip Select (CS)
To select any slave device, the master needs to pull down the
corresponding CS pin. Any instruction can be issued to a slave
device only while the CS pin is LOW. When the device is not
selected, data through the SI pin is ignored and the serial output
pin (SO) remains in a high-impedance state.
Note A new instruction must begin with the falling edge of CS.
Therefore, only one opcode can be issued for each active Chip
Select cycle.
Serial Clock (SCK)
The Serial Clock is generated by the SPI master and the communication is synchronized with this clock after CS goes LOW.
The FM25V10 enables SPI modes 0 and 3 for data communication. In both of these modes, the inputs are latched by the
slave device on the rising edge of SCK and outputs are issued
on the falling edge. Therefore, the first rising edge of SCK
signifies the arrival of the first bit (MSB) of a SPI instruction on
the SI pin. Further, all data inputs and outputs are synchronized
with SCK.
Data Transmission (SI/SO)
The SPI data bus consists of two lines, SI and SO, for serial data
communication. SI is also referred to as Master Out Slave In
(MOSI) and SO is referred to as Master In Slave Out (MISO). The
master issues instructions to the slave through the SI pin, while
the slave responds through the SO pin. Multiple slave devices
may share the SI and SO lines as described earlier.
The FM25V10 has two separate pins for SI and SO, which can
be connected with the master as shown in Figure 3 on page 5.
For a microcontroller that has no dedicated SPI bus, a
general-purpose port may be used. To reduce hardware
resources on the controller, it is possible to connect the two data
pins (SI, SO) together and tie off (HIGH) the HOLD and WP pins.
Figure 4 on page 5 shows such a configuration, which uses only
three pins.
Page 4 of 26
FM25V10
Most Significant Bit (MSB)
Serial Opcode
The SPI protocol requires that the first bit to be transmitted is the
Most Significant Bit (MSB). This is valid for both address and
data transmission.
After the slave device is selected with CS going LOW, the first
byte received is treated as the opcode for the intended operation.
FM25V10 uses the standard opcodes for memory accesses.
The 1-Mbit serial F-RAM requires a 3-byte address for any read
or write operation. Because the address is only 17 bits, the first
seven bits, which are fed in are ignored by the device. Although
these seven bits are ‘don’t care’, Cypress recommends that
these bits be set to 0s to enable seamless transition to higher
memory densities.
Invalid Opcode
If an invalid opcode is received, the opcode is ignored and the
device ignores any additional serial data on the SI pin until the
next falling edge of CS, and the SO pin remains tristated.
Status Register
FM25V10 has an 8-bit Status Register. The bits in the Status
Register are used to configure the device. These bits are
described in Table 3 on page 7.
Figure 3. System Configuration with SPI Port
SCK
MOSI
MISO
SCK
SPI
Microcontroller
SI
SO
FM25V10
SCK
SI
SO
FM25V10
CS HOLD WP
CS HOLD WP
CS1
HO LD 1
WP1
CS2
HO LD 2
WP2
Figure 4. System Configuration without SPI Port
P1.0
P1.1
SCK
SI
SO
Microcontroller
FM25V10
CS HOLD WP
P1.2
SPI Modes
FM25V10 may be driven by a microcontroller with its SPI
peripheral running in either of the following two modes:
■
SPI Mode 0 (CPOL = 0, CPHA = 0)
■
SPI Mode 3 (CPOL = 1, CPHA = 1)
For both these modes, the input data is latched in on the rising
edge of SCK starting from the first rising edge after CS goes
active. If the clock starts from a HIGH state (in mode 3), the first
Document Number: 001-84499 Rev. *K
rising edge after the clock toggles is considered. The output data
is available on the falling edge of SCK.
The two SPI modes are shown in Figure 5 on page 6 and
Figure 6 on page 6. The status of the clock when the bus master
is not transferring data is:
■
SCK remains at 0 for Mode 0
■
SCK remains at 1 for Mode 3
Page 5 of 26
FM25V10
The device detects the SPI mode from the status of the SCK pin
when the device is selected by bringing the CS pin LOW. If the
SCK pin is LOW when the device is selected, SPI Mode 0 is
assumed and if the SCK pin is HIGH, it works in SPI Mode 3.
Figure 5. SPI Mode 0
1
2
3
5
4
6
7
SCK
SI
7
6
5
4
3
2
1
0
MSB
The FM25V10 will power up with writes disabled. The WREN
command must be issued before any write operation. Sending
the WREN opcode allows the user to issue subsequent opcodes
for write operations. These include writing the Status Register
(WRSR) and writing the memory (WRITE).
Sending the WREN opcode causes the internal Write Enable
Latch to be set. A flag bit in the Status Register, called WEL,
indicates the state of the latch. WEL = ‘1’ indicates that writes are
permitted. Attempting to write the WEL bit in the Status Register
has no effect on the state of this bit – only the WREN opcode can
set this bit. The WEL bit will be automatically cleared on the rising
edge of CS following a WRDI, a WRSR, or a WRITE operation.
This prevents further writes to the Status Register or the F-RAM
array without another WREN command. Figure 7 illustrates the
WREN command bus configuration.
CS
0
WREN - Set Write Enable Latch
LSB
Figure 7. WREN Bus Configuration
Figure 6. SPI Mode 3
CS
CS
0
1
2
3
5
4
6
7
SCK
0
7
6
5
4
3
2
MSB
1
The FM25V10 is not accessible for a tPU time after power-up.
Users must comply with the timing parameter, tPU, which is the
minimum time from VDD (min) to the first CS LOW.
Command Structure
There are ten commands, called opcodes, that can be issued by
the bus master to the FM25V10. They are listed in Table 1.
These opcodes control the functions performed by the memory.
Table 1. Opcode Commands
Description
Opcode
WREN
Set write enable latch
0000 0110b
WRDI
Reset write enable latch
0000 0100b
RDSR
Read Status Register
0000 0101b
WRSR
Write Status Register
0000 0001b
READ
Read memory data
0000 0011b
FSTRD
Fast read memory data
0000 1011b
WRITE
Write memory data
0000 0010b
SLEEP
Enter sleep mode
1011 1001b
RDID
Read device ID
1001 1111b
SNR
Read S/N
1100 0011b
Document Number: 001-84499 Rev. *K
0
0
0
3
0
0
LSB
Power Up to First Access
Name
2
4
5
6
7
SCK
SI
SI
1
0
1
1
0
HI-Z
SO
WRDI - Reset Write Enable Latch
The WRDI command disables all write activity by clearing the
Write Enable Latch. The user can verify that writes are disabled
by reading the WEL bit in the Status Register and verifying that
WEL is equal to ‘0’. Figure 8 illustrates the WRDI command bus
configuration.
Figure 8. WRDI Bus Configuration
CS
0
1
2
3
4
5
6
7
SCK
SI
SO
0
0
0
0
0
1
0
0
HI-Z
Page 6 of 26
FM25V10
Status Register and Write Protection
The write protection features of the FM25V10 are multi-tiered
and are enabled through the status register. The Status Register
is organized as follows. (The default value shipped from the
factory for bit 0, WEL, BP0, BP1, bits 4–5, WPEN is ‘0’, and for
bit 6 is ‘1’).
Table 2. Status Register
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
WPEN (0)
X (1)
X (0)
X (0)
BP1 (0)
BP0 (0)
WEL (0)
X (0)
Table 3. Status Register Bit Definition
Bit
Definition
Description
Bit 0
Don’t care
This bit is non-writable and always returns ‘0’ upon read.
Bit 1 (WEL)
Write Enable
WEL indicates if the device is write enabled. This bit defaults to ‘0’ (disabled) on power-up.
WEL = ‘1’ --> Write enabled
WEL = ‘0’ --> Write disabled
Bit 2 (BP0)
Block Protect bit ‘0’
Used for block protection. For details, see Table 4 on page 7.
Bit 3 (BP1)
Block Protect bit ‘1’
Used for block protection. For details, see Table 4 on page 7.
Bit 4–5
Don’t care
These bits are non-writable and always return ‘0’ upon read.
Bit 6
Don’t care
This bit is non-writable and always return ‘1’ upon read.
Bit 7 (WPEN)
Write Protect Enable bit Used to enable the function of Write Protect Pin (WP). For details, see Table 5 on page 7.
Bits 0 and 4–5 are fixed at ‘0’ and bit 6 is fixed at ‘1’; none of these
bits can be modified. Note that bit 0 (“Ready or Write in progress”
bit in serial flash and EEPROM) is unnecessary, as the F-RAM
writes in real-time and is never busy, so it reads out as a ‘0’. An
exception to this is when the device is waking up from sleep
mode, which is described in Sleep Mode on page 11. The BP1
and BP0 control the software write-protection features and are
nonvolatile bits. The WEL flag indicates the state of the Write
Enable Latch. Attempting to directly write the WEL bit in the
Status Register has no effect on its state. This bit is internally set
and cleared via the WREN and WRDI commands, respectively.
BP1 and BP0 are memory block write protection bits. They
specify portions of memory that are write-protected as shown in
Table 4.
Table 4. Block Memory Write Protection
The BP1 and BP0 bits and the Write Enable Latch are the only
mechanisms that protect the memory from writes. The remaining
write protection features protect inadvertent changes to the block
protect bits.
The write protect enable bit (WPEN) in the Status Register
controls the effect of the hardware write protect (WP) pin. When
the WPEN bit is set to ‘0’, the status of the WP pin is ignored.
When the WPEN bit is set to ‘1’, a LOW on the WP pin inhibits a
write to the Status Register. Thus the Status Register is
write-protected only when WPEN = ‘1’ and WP = ‘0’.
Table 5 summarizes the write protection conditions.
Table 5. Write Protection
WEL WPEN WP
Protected Unprotected
Blocks
Blocks
Status
Register
Protected
Protected
Protected
BP1
BP0
Protected Address Range
0
X
X
0
0
None
1
0
X
Protected
Unprotected
Unprotected
1
0
Protected
Unprotected
Protected
1
1
Protected
Unprotected
Unprotected
0
1
18000h to 1FFFFh (upper 1/4)
1
1
0
10000h to 1FFFFh (upper 1/2)
1
1
1
00000h to 1FFFFh (all)
Document Number: 001-84499 Rev. *K
Page 7 of 26
FM25V10
RDSR - Read Status Register
WRSR - Write Status Register
The RDSR command allows the bus master to verify the
contents of the Status Register. Reading the status register
provides information about the current state of the
write-protection features. Following the RDSR opcode, the
FM25V10 will return one byte with the contents of the Status
Register.
The WRSR command allows the SPI bus master to write into the
Status Register and change the write protect configuration by
setting the WPEN, BP0 and BP1 bits as required. Before issuing
a WRSR command, the WP pin must be HIGH or inactive. Note
that on the FM25V10, WP only prevents writing to the Status
Register, not the memory array. Before sending the WRSR
command, the user must send a WREN command to enable
writes. Executing a WRSR command is a write operation and
therefore, clears the Write Enable Latch.
Figure 9. RDSR Bus Configuration
CS
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
Opcode
0
SI
0
0
0
0
1
0
1
0
Data
HI-Z
SO
D7 D6 D5 D4 D3 D2 D1 D0
MSB
LSB
Figure 10. WRSR Bus Configuration (WREN not shown)
CS
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
Data
Opcode
SI
0
SO
0
0
0
0
0
0
1 D7 X
MSB
X D3 D2 X
X
LSB
HI-Z
Memory Operation
The SPI interface, which is capable of a high clock frequency,
highlights the fast write capability of the F-RAM technology.
Unlike serial flash and EEPROMs, the FM25V10 can perform
sequential writes at bus speed. No page register is needed and
any number of sequential writes may be performed.
Write Operation
All writes to the memory begin with a WREN opcode with CS
being asserted and deasserted. The next opcode is WRITE. The
WRITE opcode is followed by a three-byte address containing
the 17-bit address (A16–A0) of the first data byte to be written
into the memory. Subsequent bytes are data bytes, which are
written sequentially. Addresses are incremented internally as
long as the bus master continues to issue clocks and keeps CS
Document Number: 001-84499 Rev. *K
X
LOW. If the last address of 1FFFFh is reached, the counter will
roll over to 00000h. Data is written MSB first. The rising edge of
CS terminates a write operation. A write operation is shown in
Figure 11 on page 9.
Note When a burst write reaches a protected block address, the
automatic address increment stops and all the subsequent data
bytes received for write will be ignored by the device.
EEPROMs use page buffers to increase their write throughput.
This compensates for the technology’s inherently slow write
operations. F-RAM memories do not have page buffers because
each byte is written to the F-RAM array immediately after it is
clocked in (after the eighth clock). This allows any number of
bytes to be written without page buffer delays.
Note If the power is lost in the middle of the write operation, only
the last completed byte will be written.
Page 8 of 26
FM25V10
Read Operation
FAST READ opcode is followed by a three-byte address
containing the 17-bit address (A16-A0) of the first byte of the
read operation and then a dummy byte. The dummy byte inserts
a read latency of 8-clock cycle. The fast read operation is
otherwise the same as an ordinary read operation except that it
requires an additional dummy byte. After receiving opcode,
address, and a dummy byte, the FM25V10 starts driving its SO
line with data bytes, with MSB first, and continues transmitting
as long as the device is selected and the clock is available. In
case of bulk read, the internal address counter is incremented
automatically, and after the last address 1FFFFh is reached, the
counter rolls over to 00000h. When the device is driving data on
its SO line, any transition on its SI line is ignored. The rising edge
of CS terminates a fast read operation and tristates the SO pin.
A Fast Read operation is shown in Figure 13 on page 10.
After the falling edge of CS, the bus master can issue a READ
opcode. Following the READ command is a three-byte address
containing the 17-bit address (A16–A0) of the first byte of the
read operation. After the opcode and address are issued, the
device drives out the read data on the next eight clocks. The SI
input is ignored during read data bytes. Subsequent bytes are
data bytes, which are read out sequentially. Addresses are incremented internally as long as the bus master continues to issue
clocks and CS is LOW. If the last address of 1FFFFh is reached,
the counter will roll over to 00000h. Data is read MSB first. The
rising edge of CS terminates a read operation and tristates the
SO pin. A read operation is shown in Figure 12.
Fast Read Operation
The FM25V10 supports a FAST READ opcode (0Bh) that is
provided for code compatibility with serial flash devices. The
Figure 11. Memory Write (WREN not shown) Operation
CS
1
2
3
4
5
6
7
0
1
2
3
4
5
6
Opcode
SI
0
0
0
0
0
7
~
~ ~
~
0
SCK
20 21 22 23 0
1
1
0
X
X
X
X
X
X A16
X
MSB
3
4
5
6
7
Data
17-bit Address
0
2
A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0
LSB MSB
LSB
HI-Z
SO
Figure 12. Memory Read Operation
CS
1
2
3
4
5
6
7
0
1
2
3
4
5
6
Opcode
SI
0
0
0
0
0
7
~
~ ~
~
0
SCK
20 21 22 23 0
1
2
3
4
5
6
7
17-bit Address
0
1
1
X
X
X
MSB
SO
X
X
X
X
A16
A3 A2 A1 A0
LSB
Data
HI-Z
D7 D6 D5 D4 D3 D2 D1 D0
MSB
Document Number: 001-84499 Rev. *K
LSB
Page 9 of 26
FM25V10
Figure 13. Fast Read Operation
CS
1
2
3
4
5 6
7
0
1
2
3
4
5
Opcode
SI
0
0
0
0
1
6
7
~
~ ~
~
0
SCK
20 21 22 23 24 25 26 27 28 29 30 31 0
1 1
X X
X
X
X X X A16
MSB
A3 A2 A1 A0 X
X
X X
X
The HOLD pin can be used to interrupt a serial operation without
aborting it. If the bus master pulls the HOLD pin LOW while SCK
is LOW, the current operation will pause. Taking the HOLD pin
5
6
7
Data
D7 D6 D5 D4 D3 D2 D1 D0
MSB
HOLD Pin Operation
3 4
X X X
LSB
HI-Z
SO
2
Dummy Byte
17-bit Address
0
1
LSB
HIGH while SCK is LOW will resume an operation. The
transitions of HOLD must occur while SCK is LOW, but the SCK
and CS pin can toggle during a hold state.
~
~
Figure 14. HOLD Operation [2]
~
~
CS
SI
VALID IN
SO
VALID IN
~
~
HOLD
~
~
~
~
SCK
Note
2. Figure shows HOLD operation for input mode and output mode.
Document Number: 001-84499 Rev. *K
Page 10 of 26
FM25V10
Sleep Mode
pin. On the next falling edge of CS, the device will return to
normal operation within tREC time. The SO pin remains in a HI-Z
state during the wakeup period. The device does not necessarily
respond to an opcode within the wakeup period. To start the
wakeup procedure, the controller may send a “dummy” read, for
example, and wait the remaining tREC time.
A low-power sleep mode is implemented on the FM25V10
device. The device will enter the low-power state when the
SLEEP opcode B9h is clocked in and a rising edge of CS is
applied. When in sleep mode, the SCK and SI pins are ignored
and SO will be HI-Z, but the device continues to monitor the CS
Figure 15. Sleep Mode Operation
Enters Sleep Mode
t REC Recovers from Sleep Mode
CS
0
1
2
3
4
5
6
t SU
7
SCK
SI
1
0
1
1
1
0
0
VALID IN
1
HI-Z
SO
Device ID
The FM25V10 device can be interrogated for its manufacturer,
product identification, and die revision. The RDID opcode 9Fh
allows the user to read the manufacturer ID and product ID, both
of which are read-only bytes.
The JEDEC-assigned manufacturer ID places the Cypress
(Ramtron) identifier in bank 7; therefore, there are six bytes of
the continuation code 7Fh followed by the single byte C2h. There
are two bytes of product ID, which includes a family code, a
density code, a sub code, and the product revision code.
Table 6. Device ID
Device ID Description
71–16
(56 bits)
Device ID
(9 bytes)
Device
15–13
(3 bits)
12–8
(5 bits)
Family
Density
7–6
(2 bits)
5–3
(3 bits)
2–0
(3 bits)
Sub
Rev
Rsvd
Product ID
Manufacturer ID
FM25V10
7F7F7F7F7F7FC22400h 0111111101111111011111110111
1111011111110111111111000010
001
00100
00
000
000
FM25VN10
7F7F7F7F7F7FC22401h 0111111101111111011111110111
1111011111110111111111000010
001
00100
00
000
001
Figure 16. Read Device ID
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
SCK
~
~
CS
44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71
Opcode
SO
1
0
0 1
1
1
1
1
HI-Z
D7 D6 D5 D4 D3 D2 D1 D0
~
~
SI
D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0
MSB
LSB
9-Byte Device ID
Document Number: 001-84499 Rev. *K
Page 11 of 26
FM25V10
Unique Serial Number (FM25VN10 only)
The FM25VN10 device incorporates a read-only 8-byte serial
number. It can be used to uniquely identify a pc board or system.
The serial number includes a 40-bit unique number, an 8-bit
CRC, and a 16-bit number that can be defined upon request by
the customer. If a customer-specific number is not requested, the
16-bit Customer Identifier is 0x0000.
The serial number is read by issuing the SNR op-code (C3h).
The 8-bit CRC value can be used to compare to the value
calculated by the controller. If the two values match, then the
communication between slave and master was performed
without errors. The function (shown below) is used to calculate
the CRC value. To perform the calculation, 7 bytes of data are
filled into a memory buffer in the same order as they are read
from the part – i.e. byte 7, byte 6, byte 5, byte 4, byte 3, byte 2,
byte 1 of the serial number. The calculation is performed on the
7 bytes, and the result should match the final byte out from the
part which is byte 0, the 8-bit CRC value.
Table 7. 8-Byte Serial Number (Read only)
Customer Identifier
SN (63:56)
SN (55:48)
40-bit Unique number
SN (47:40)
SN (39:32)
SN (31:24)
SN (23:16)
8-bit CRC
SN (15:8)
SN (7:0)
Note Contact factory for requesting a customer identifier number.
Document Number: 001-84499 Rev. *K
Page 12 of 26
FM25V10
Function to Calculate CRC
BYTE calcCRC8( BYTE* pData, int nBytes )
{
static BYTE crctable [256] = {
0x00,
0x07,
0x0E,
0x09,
0x1C,
0x1B,
0x12,
0x15,
0x38,
0x3F,
0x36,
0x31,
0x24,
0x23,
0x2A,
0x2D,
0x70,
0x77,
0x7E,
0x79,
0x6C,
0x6B,
0x62,
0x65,
0x48,
0x4F,
0x46,
0x41,
0x54,
0x53,
0x5A,
0x5D,
0xE0,
0xE7,
0xEE,
0xE9,
0xFC,
0xFB,
0xF2,
0xF5,
0xD8,
0xDF,
0xD6,
0xD1,
0xC4,
0xC3,
0xCA,
0xCD,
0x90,
0x97,
0x9E,
0x99,
0x8C,
0x8B,
0x82,
0x85,
0xA8,
0xAF,
0xA6,
0xA1,
0xB4,
0xB3,
0xBA,
0xBD,
0xC7,
0xC0,
0xC9,
0xCE, 0xDB,
0xDC,
0xD5,
0xD2,
0xFF,
0xF8,
0xF1,
0xF6,
0xE3,
0xE4,
0xED,
0xEA,
0xB7,
0xB0,
0xB9,
0xBE,
0xAB,
0xAC,
0xA5,
0xA2,
0x8F,
0x88,
0x81,
0x86,
0x93,
0x94,
0x9D,
0x9A,
0x27,
0x20,
0x29,
0x2E,
0x3B,
0x3C,
0x35,
0x32,
0x1F,
0x18,
0x11,
0x16,
0x03,
0x04,
0x0D,
0x0A,
0x57,
0x50,
0x59,
0x5E,
0x4B,
0x4C,
0x45,
0x42,
0x6F,
0x68,
0x61,
0x66,
0x73,
0x74,
0x7D,
0x7A,
0x89,
0x8E,
0x87,
0x80,
0x95,
0x92,
0x9B,
0x9C,
0xB1,
0xB6,
0xBF,
0xB8,
0xAD,
0xAA,
0xA3,
0xA4,
0xF9,
0xFE,
0xF7,
0xF0,
0xE5,
0xE2,
0xEB,
0xEC,
0xC1,
0xC6,
0xCF,
0xC8,
0xDD,
0xDA,
0xD3,
0xD4,
0x69,
0x6E,
0x67,
0x60,
0x75,
0x72,
0x7B,
0x7C,
0x51,
0x56,
0x5F,
0x58,
0x4D,
0x4A,
0x43,
0x44,
0x19,
0x1E,
0x17,
0x10,
0x05,
0x02,
0x0B,
0x0C,
0x21,
0x26,
0x2F,
0x28,
0x3D,
0x3A,
0x33,
0x34,
0x4E,
0x49,
0x40,
0x47,
0x52,
0x55,
0x5C,
0x5B,
0x76,
0x71,
0x78,
0x7F,
0x6A,
0x6D,
0x64,
0x63,
0x3E,
0x39,
0x30,
0x37,
0x22,
0x25,
0x2C,
0x2B,
0x06,
0x01,
0x08,
0x0F,
0x1A,
0x1D,
0x14,
0x13,
0xAE,
0xA9,
0xA0,
0xA7,
0xB2,
0xB5,
0xBC,
0xBB,
0x96,
0x91,
0x98,
0x9F,
0x8A,
0x8D,
0x84,
0x83,
0xDE, 0xD9,
0xD0,
0xD7,
0xC2,
0xC5,
0xCC, 0xCB,
0xE6,
0xE8,
0xEF,
0xFA,
0xFD,
0xF4,
0xE1,
0xF3
};
BYTE crc = 0;
while( nBytes-- ) crc = crctable[crc ^ *pData++];
return crc;
}
Document Number: 001-84499 Rev. *K
Page 13 of 26
FM25V10
Endurance
The FM25V10 devices are capable of being accessed at least
1014 times, reads or writes. An F-RAM memory operates with a
read and restore mechanism. Therefore, an endurance cycle is
applied on a row basis for each access (read or write) to the
memory array. The F-RAM architecture is based on an array of
rows and columns of 16K rows of 64-bits each. The entire row is
internally accessed once, whether a single byte or all eight bytes
are read or written. Each byte in the row is counted only once in
an endurance calculation. Table 7 shows endurance calculations
for a 64-byte repeating loop, which includes an opcode, a starting
address, and a sequential 64-byte data stream. This causes
each byte to experience one endurance cycle through the loop.
F-RAM read and write endurance is virtually unlimited even at a
40-MHz clock rate.
Document Number: 001-84499 Rev. *K
Table 8. Time to Reach Endurance Limit for Repeating
64-byte Loop
SCK Freq
(MHz)
Endurance
Cycles/sec
Endurance
Cycles/year
Years to Reach
Limit
40
73,520
2.32 × 1012
43.2
36,760
1012
86.4
25
10
5
18,380
9,190
1.16 ×
5.79 × 10
11
172.7
2.90 × 10
11
345.4
Page 14 of 26
FM25V10
Maximum Ratings
Package power dissipation capability
(TA = 25 °C) ................................................................. 1.0 W
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Surface mount lead soldering temperature
(3 seconds) .............................................................. +260 C
Storage temperature ................................ –65 C to +125 C
DC output current
(1 output at a time, 1s duration) .................................. 15 mA
Maximum accumulated storage time
At 125 °C ambient temperature ................................. 1000 h
At 85 °C ambient temperature ................................ 10 Years
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Electrostatic Discharge Voltage
Human Body Model (AEC-Q100-002 Rev. E) ...................... 4kV
Charged Device Model (AEC-Q100-011 Rev. B) ............. 1.25 kV
Machine Model (AEC-Q100-003 Rev. E) ............................ 200 V
Supply voltage on VDD relative to VSS .........–1.0 V to +4.5 V
Latch-up current .................................................... > 140 mA
Input voltage ........... –1.0 V to +4.5 V and VIN < VDD + 1.0 V
Operating Range
DC voltage applied to outputs
in High-Z state .................................... –0.5 V to VDD + 0.5 V
Transient voltage (< 20 ns)
on any pin to ground potential ............ –2.0 V to VDD + 2.0 V
Range
Ambient Temperature (TA)
VDD
–40 C to +85 C
2.0 V to 3.6 V
Industrial
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
VDD
Power supply
IDD
VDD supply current
Min
Typ [3]
Max
Unit
2.0
3.3
3.6
V
fSCK = 1 MHz
–
–
0.3
mA
fSCK = 40 MHz
–
1.5
3.0
mA
Test Conditions
SCK toggling between
VDD – 0.2 V and VSS,
other inputs
VSS or VDD – 0.2 V.
SO = Open
ISB
VDD standby current
CS = VDD. All other inputs VSS or VDD.
–
90
150
A
IZZ
Sleep mode current
CS = VDD.
All other inputs VSS or VDD.
–
5
8
A
ILI
Input leakage current
(except HOLD pin)
VSS < VIN < VDD
–
–
±1
A
ILO
Output leakage current
VSS < VOUT < VDD
–
–
±1
A
VIH
Input HIGH voltage
0.7 × VDD
–
VDD + 0.3
V
VIL
Input LOW voltage
– 0.3
–
0.3 × VDD
V
VOH1
Output HIGH voltage
IOH = –1 mA, VDD = 2.7 V.
2.4
–
–
V
VOH2
Output HIGH voltage
IOH = –100 A
VDD – 0.2
–
–
V
VOL1
Output LOW voltage
IOL = 2 mA, VDD = 2.7 V
–
–
0.4
V
VOL2
Output LOW voltage
IOL = 150 A
–
–
0.2
V
Input resistance (HOLD pin)
For VIN = VIH(min)
40
–
–
k
For VIN = VIL(max)
1
–
–
M
RIN
[4]
Note
3. Typical values are at 25 °C, VDD = VDD(typ). Not 100% tested.
4. The input pull-up circuit is strong (> 40 k) when the input voltage is above VIH and weak (>1 M) when the input voltage is below VIL.
Document Number: 001-84499 Rev. *K
Page 15 of 26
FM25V10
Data Retention and Endurance
Parameter
TDR
NVC
Description
Data retention
Endurance
Min
Max
Unit
TA = 85 C
Test condition
10
–
Years
TA = 75 C
38
–
TA = 65 C
151
–
14
–
Cycles
Max
Unit
8
pF
6
pF
Over operating temperature
10
Capacitance
Parameter [5]
Description
CO
Output pin capacitance (SO)
CI
Input pin capacitance
Test Conditions
TA = 25 C, f = 1 MHz, VDD = VDD(typ)
Thermal Resistance
Parameter [5]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
Test Conditions
8-pin SOIC
8-pin DFN
Unit
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51.
138
31
C/W
40
35
C/W
AC Test Conditions
Input pulse levels .................................10% and 90% of VDD
Input rise and fall times ...................................................3 ns
Input and output timing reference levels ................0.5 × VDD
Output load capacitance .............................................. 30 pF
Note
5. This parameter is characterized and not 100% tested.
Document Number: 001-84499 Rev. *K
Page 16 of 26
FM25V10
AC Switching Characteristics
Over the Operating Range
Parameters [6]
Cypress
Parameter
VDD = 2.0 V to 2.7 V
Description
Alt. Parameter
VDD = 2.7 V to 3.6 V
Min
Max
Min
Max
Unit
fSCK
–
SCK clock frequency
0
25
0
40
MHz
tCH
–
Clock HIGH time
20
–
11
–
ns
tCL
–
Clock LOW time
20
–
11
–
ns
tCSU
tCSS
Chip select setup
12
–
10
–
ns
tCSH
tCSH
Chip select hold
12
–
10
–
ns
tHZCS
Output disable time
–
20
–
12
ns
tODV
tCO
Output data valid time
–
18
–
9
ns
tOH
–
Output hold time
0
–
0
–
ns
tD
tOD
[7, 8]
–
Deselect time
60
–
40
–
ns
[9, 10]
–
Data in rise time
–
50
–
50
ns
tF[9, 10]
–
Data in fall time
–
50
–
50
ns
tSU
tSD
Data setup time
8
–
5
–
ns
tH
tHD
Data hold time
8
–
5
–
ns
tHS
tSH
HOLD setup time
12
–
10
–
ns
tHH
tHH
HOLD hold time
12
–
10
–
ns
tHZ[7, 8]
tLZ[8]
tHHZ
HOLD LOW to HI-Z
–
25
–
20
ns
tHLZ
HOLD HIGH to data active
–
25
–
20
ns
tR
Notes
6. Test conditions assume a signal transition time of 3 ns or less, timing reference levels of 0.5 × VDD, input pulse levels of 10% to 90% of VDD, and output loading of
the specified IOL/IOH and 30 pF load capacitance shown in AC Test Conditions on page 16.
7. tOD and tHZ are specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state
8. This parameter is characterized and not 100% tested.
9. Rise and fall times measured between 10% and 90% of waveform.
10. These parameters are guaranteed by design and are not tested.
Document Number: 001-84499 Rev. *K
Page 17 of 26
FM25V10
Figure 17. Synchronous Data Timing (Mode 0)
tD
CS
tCSU
tCH
tCL
tCSH
SCK
tSU
SI
tH
VALID IN
VALID IN
VALID IN
tOH
tODV
SO
HI-Z
tOD
HI-Z
CS
SCK
tHH
~
~
~
~
Figure 18. HOLD Timing
tHS
~
~
tHS
VALID IN
tHZ
Document Number: 001-84499 Rev. *K
VALID IN
tLZ
~
~
SO
tSU
~
~
HOLD
SI
tHH
Page 18 of 26
FM25V10
Power Cycle Timing
Over the Operating Range
Parameter
Description
Min
Max
Unit
250
–
µs
tPU
Power-up VDD(min) to first access (CS LOW)
tPD
Last access (CS HIGH) to power-down (VDD(min))
0
–
µs
tVR [11, 12]
VDD power-up ramp rate
50
–
µs/V
tVF [11, 12]
VDD power-down ramp rate
100
–
µs/V
tREC [13]
Recovery time from sleep mode
–
400
µs
VDD
~
~
Figure 19. Power Cycle Timing
VDD(min)
tVR
CS
tVF
tPD
~
~
tPU
VDD(min)
Notes
11. Slope measured at any point on the VDD waveform.
12. This parameter is characterized and not 100% tested.
13. Guaranteed by design. Refer to Figure 15 on page 11 for sleep mode recovery timing.
Document Number: 001-84499 Rev. *K
Page 19 of 26
FM25V10
Ordering Information
Ordering Code
Package Diagram
Package Type
FM25V10-G
51-85066
8-pin SOIC
FM25V10-GTR
51-85066
8-pin SOIC
FM25V10-DG
001-85579
8-pin DFN
FM25V10-DGTR
001-85579
8-pin DFN
FM25VN10-G
51-85066
8-pin SOIC, Serial Number
FM25VN10-GTR
51-85066
8-pin SOIC, Serial Number
Operating Range
Industrial
All these parts are Pb-free. Contact your local Cypress sales representative for availability of these parts.
Ordering Code Definitions
FM 25
V N 10 - X
X
Option: X = blank or TR
blank = Standard; TR = Tape and Reel
Package Type: X = G or DG
G = 8-pin SOIC; DG-8-pin DFN
Density: 10 = 1-Mbit
N - Serial Number
Voltage: V = 2.0 V to 3.6 V
SPI F-RAM
Cypress
Document Number: 001-84499 Rev. *K
Page 20 of 26
FM25V10
Package Diagrams
Figure 20. 8-pin SOIC (150 Mils) Package Outline, 51-85066
51-85066 *I
Document Number: 001-84499 Rev. *K
Page 21 of 26
FM25V10
Package Diagrams (continued)
Figure 21. 8-pin DFN (5 mm × 6 mm × 0.75 mm) Package Outline, 001-85579
001-85579 *A
Document Number: 001-84499 Rev. *K
Page 22 of 26
FM25V10
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CPHA
Clock Phase
CPOL
Clock Polarity
°C
degree Celsius
DFN
Dual Flat No-lead
Hz
hertz
EEPROM
Electrically Erasable Programmable Read-Only
Memory
kHz
kilohertz
k
kilohm
EIA
Electronic Industries Alliance
Mbit
megabit
F-RAM
Ferroelectric Random Access Memory
MHz
megahertz
I/O
Input/Output
A
microampere
JEDEC
Joint Electron Devices Engineering Council
F
microfarad
JESD
JEDEC Standards
s
microsecond
LSB
Least Significant Bit
mA
milliampere
MSB
Most Significant Bit
ms
millisecond
RoHS
Restriction of Hazardous Substances
ns
nanosecond
SPI
Serial Peripheral Interface
ohm
SOIC
Small Outline Integrated Circuit
%
percent
pF
picofarad
V
volt
W
watt
Document Number: 001-84499 Rev. *K
Symbol
Unit of Measure
Page 23 of 26
FM25V10
Document History Page
Document Title: FM25V10, 1-Mbit (128K × 8) Serial (SPI) F-RAM
Document Number: 001-84499
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
3912930
GVCH
02/25/2013
New spec.
Description of Change
*A
3994285
GVCH
05/14/2013
Added Appendix A - Errata for FM25V10 and FM25VN10.
*B
4045438
GVCH
06/30/2013
Removed Errata (As all errata items are fixed).
*C
4227815
GVCH
01/24/2014
Updated Maximum Ratings:
Added “Maximum Junction Temperature” and its corresponding details.
Added “DC voltage applied to outputs in High-Z state” and its corresponding
details.
Added “Transient voltage (< 20 ns) on any pin to ground potential” and its
corresponding details.
Added “Package power dissipation capability (TA = 25 °C)” and its
corresponding details.
Added “DC output current (1 output at a time, 1s duration)” and its
corresponding details.
Added “Latch-up Current” and its corresponding details.
Removed “Package Moisture Sensitivity Level” and its corresponding
details.
Updated Data Retention and Endurance:
Removed existing details of TDR parameter.
Added details of TDR parameter corresponding to “TA = 85 °C”, “TA = 75 °C”
and “TA = 65 °C”.
Added NVC parameter and its corresponding details.
Added Thermal Resistance.
Updated Package Diagrams:
Removed Package Marking Scheme (top mark).
Removed “Ramtron Revision History”.
Updated to Cypress template.
Completing Sunset Review.
*D
4563141
GVCH
11/06/2014
Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
*E
4875900
ZSK / PSR
08/07/2015
Updated Maximum Ratings:
Removed “Maximum junction temperature” and its corresponding details.
Added “Maximum accumulated storage time” and its corresponding details.
Added “Ambient temperature with power applied” and its corresponding
details.
Updated Package Diagrams:
spec 51-85066 – Changed revision from *F to *G.
Updated to new template.
*F
5033012
GVCH
12/02/2015
Updated Status Register and Write Protection:
Updated Table 3 (Fixed typo error (Replaced “Bit 7” with “Bit 6” in “Bit”
column)).
Updated Package Diagrams:
spec 51-85066 – Changed revision from *G to *H.
*G
5327775
GVCH
06/28/2016
Added 8-pin DFN package related information in all instances across the
document.
Updated Ordering Information:
Updated part numbers.
Updated Package Diagrams:
Added spec 001-85260 *B.
Updated to new template.
Document Number: 001-84499 Rev. *K
Page 24 of 26
FM25V10
Document History Page (continued)
Document Title: FM25V10, 1-Mbit (128K × 8) Serial (SPI) F-RAM
Document Number: 001-84499
Rev.
ECN No.
Orig. of
Change
Submission
Date
*H
5420173
ZSK
08/30/2016
Updated Ordering Information:
No change in part numbers.
Replaced “001-85260” with “001-85579” in “Package Diagram” column.
Updated Package Diagrams:
Removed spec 001-85260 *B.
Added spec 001-85579 *A.
Updated to new template.
*I
5765019
AESATMP9
06/06/2017
Updated logo and copyright.
*J
5857370
GVCH
08/17/2017
Updated Memory Operation:
Updated Device ID:
Updated Table 6 (Added device FM25VN10 and its corresponding details).
Updated Package Diagrams:
spec 51-85066 – Changed revision from *H to *I.
*K
6381543
GVCH
11/12/2018
Updated Maximum Ratings:
Replaced “–55 °C to +125 °C” with “–65 °C to +125 °C” in ratings
corresponding to “Storage temperature”.
Updated to new template.
Document Number: 001-84499 Rev. *K
Description of Change
Page 25 of 26
FM25V10
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
PSoC® Solutions
Products
Arm® Cortex® Microcontrollers
Automotive
cypress.com/arm
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cypress.com/clocks
cypress.com/interface
Internet of Things
Memory
cypress.com/iot
cypress.com/memory
Microcontrollers
cypress.com/mcu
PSoC
cypress.com/psoc
Power Management ICs
Cypress Developer Community
Community | Projects | Video | Blogs | Training | Components
Technical Support
cypress.com/support
cypress.com/pmic
Touch Sensing
cypress.com/touch
USB Controllers
Wireless Connectivity
PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6 MCU
cypress.com/usb
cypress.com/wireless
© Cypress Semiconductor Corporation, 2013–2018. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC (“Cypress”). This document,
including any software or firmware included or referenced in this document (“Software”), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress
hereby grants you a personal, non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code form, to
modify and reproduce the Software solely for use with Cypress hardware products, only internally within your organization, and (b) to distribute the Software in binary code form externally to end users
(either directly or indirectly through resellers and distributors), solely for use on Cypress hardware product units, and (2) under those claims of Cypress’s patents that are infringed by the Software (as
provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification, translation, or compilation
of the Software is prohibited.
TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE
OR ACCOMPANYING HARDWARE, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. No computing
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such as unauthorized access to or use of a Cypress product. In addition, the products described in these materials may contain design defects or errors known as errata which may cause the product
to deviate from published specifications. To the extent permitted by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any
liability arising out of the application or use of any product or circuit described in this document. Any information provided in this document, including any sample design information or programming
code, is provided only for reference purposes. It is the responsibility of the user of this document to properly design, program, and test the functionality and safety of any application made of this
information and any resulting product. Cypress products are not designed, intended, or authorized for use as critical components in systems designed or intended for the operation of weapons, weapons
systems, nuclear installations, life-support devices or systems, other medical devices or systems (including resuscitation equipment and surgical implants), pollution control or hazardous substances
management, or other uses where the failure of the device or system could cause personal injury, death, or property damage (“Unintended Uses”). A critical component is any component of a device
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shall and hereby do release Cypress from any claim, damage, or other liability arising from or related to all Unintended Uses of Cypress products. You shall indemnify and hold Cypress harmless from
and against all claims, costs, damages, and other liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products.
Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners.
Document Number: 001-84499 Rev. *K
Revised November 12, 2018
Page 26 of 26
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