Please note that Cypress is an Infineon Technologies Company.
The document following this cover page is marked as “Cypress” document as this is the
company that originally developed the product. Please note that Infineon will continue
to offer the product to new and existing customers as part of the Infineon product
portfolio.
Continuity of document content
The fact that Infineon offers the following product as part of the Infineon product
portfolio does not lead to any changes to this document. Future revisions will occur
when appropriate, and any changes will be set out on the document history page.
Continuity of ordering part numbers
Infineon continues to support existing part numbers. Please continue to use the
ordering part numbers listed in the datasheet for ordering.
www.infineon.com
FM28V020
256-Kbit (32K × 8) F-RAM Memory
256-Kbit (32K × 8) F-RAM Memory
Features
■
256-Kbit ferroelectric random access memory (F-RAM)
logically organized as 32K × 8
14
❐ High-endurance 100 trillion (10 ) read/writes
❐ 151-year data retention (see Data Retention and Endurance
on page 8)
❐ NoDelay™ writes
❐ Page mode operation
❐ Advanced high-reliability ferroelectric process
■
SRAM compatible
❐ Industry-standard 32K × 8 SRAM pinout
❐ 70-ns access time, 140-ns cycle time
■
Superior to battery-backed SRAM modules
❐ No battery concerns
❐ Monolithic reliability
❐ True surface mount solution, no rework steps
❐ Superior for moisture, shock, and vibration
❐ Resistant to negative voltage undershoots
■
Low power consumption
❐ Active current 5 mA (typ)
❐ Standby current 90 A (typ)
■
Low-voltage operation: VDD = 2.0 V to 3.6 V
■
Industrial temperature: –40 C to +85 C
■
Packages:
❐ 28-pin small outline integrated circuit (SOIC) package
❐ 28-pin thin small outline package (TSOP) Type I
❐ 32-pin thin small outline package (TSOP) Type I
■
Restriction of hazardous substances (RoHS) compliant
Functional Description
The FM28V020 is a 32K × 8 nonvolatile memory that reads and
writes similar to a standard SRAM. A ferroelectric random
access memory or F-RAM is nonvolatile, which means that data
is retained after power is removed. It provides data retention for
over 151 years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing and high
write endurance make the F-RAM superior to other types of
memory.
The FM28V020 operation is similar to that of other RAM devices
and therefore, it can be used as a drop-in replacement for a
standard SRAM in a system. Read and write cycles may be
triggered by CE or simply by changing the address. The F-RAM
memory is nonvolatile due to its unique ferroelectric memory
process. These features make the FM28V020 ideal for
nonvolatile memory applications requiring frequent or rapid
writes.
The device is available in a 28-pin SOIC, 28-pin TSOP I and
32-pin TSOP I surface mount packages. Device specifications
are guaranteed over the industrial temperature range –40 °C to
+85 °C.
For a complete list of related documentation, click here.
A 2-0
...
A 14-3
Address Latch
A14-0
Row Decoder
Logic Block Diagram
32 K x 8
F-RAM Array
...
CE
WE
OE
Cypress Semiconductor Corporation
Document Number: 001-86204 Rev. *H
Column Decoder
Control
Logic
•
I/O Latch & Bus Driver
198 Champion Court
•
DQ 7-0
San Jose, CA 95134-1709
•
408-943-2600
Revised November 20, 2018
FM28V020
Contents
Pinouts .............................................................................. 3
Pin Definitions .................................................................. 4
Device Operation .............................................................. 5
Memory Operation ....................................................... 5
Read Operation ........................................................... 5
Write Operation ........................................................... 5
Page Mode Operation ................................................. 5
Pre-charge Operation .................................................. 5
SRAM Drop-In Replacement ....................................... 6
Endurance ................................................................... 6
Maximum Ratings ............................................................. 7
Operating Range ............................................................... 7
DC Electrical Characteristics .......................................... 7
Data Retention and Endurance ....................................... 8
Capacitance ...................................................................... 8
Thermal Resistance .......................................................... 8
AC Test Conditions .......................................................... 8
AC Switching Characteristics ......................................... 9
SRAM Read Cycle ...................................................... 9
Document Number: 001-86204 Rev. *H
SRAM Write Cycle ..................................................... 10
Power Cycle Timing ....................................................... 13
Functional Truth Table ................................................... 14
Ordering Information ...................................................... 15
Ordering Code Definitions ......................................... 15
Package Diagrams .......................................................... 16
Acronyms ........................................................................ 19
Document Conventions ................................................. 19
Units of Measure ....................................................... 19
Document History Page ................................................. 20
Sales, Solutions, and Legal Information ...................... 22
Worldwide Sales and Design Support ....................... 22
Products .................................................................... 22
PSoC® Solutions ...................................................... 22
Cypress Developer Community ................................. 22
Technical Support ..................................................... 22
Page 2 of 22
FM28V020
Pinouts
Figure 1. 28-pin SOIC pinout
A14
1
28
VDD
A12
2
3
27
26
WE
A13
4
5
25
24
23
A8
22
21
OE
A10
20
CE
DQ7
A7
A6
A5
A4
A3
6
7
28-pin SOIC
(x 8)
A2
A1
8
9
Top view
(not to scale)
A0
10
11
19
18
12
17
13
16
14
15
DQ0
DQ1
DQ2
VSS
A9
A11
DQ6
DQ5
DQ4
DQ3
Figure 2. 28-pin TSOP I pinout
OE
A11
A9
A8
A13
WE
VDD
A14
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
28-pin TSOP I
(x 8)
Top view
(not to scale)
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
NC
Figure 3. 32-pin TSOP I pinout
NC
OE
A11
A9
A8
A13
WE
VDD
A14
A12
A7
A6
A5
A4
A3
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Document Number: 001-86204 Rev. *H
32-pin TSOP I
(x 8)
Top view
(not to scale)
Page 3 of 22
FM28V020
Pin Definitions
Pin Name
I/O Type
Description
A14–A0
Input
Address inputs: The 15 address lines select one of 32,768 bytes in the F-RAM array. The lowest two
address lines A2–A0 may be used for page mode read and write operations.
DQ7–DQ0
Input/Output Data I/O Lines: 8-bit bidirectional data bus for accessing the F-RAM array.
WE
Input
Write Enable: A write cycle begins when WE is asserted. The rising edge causes the FM28V020 to write
the data on the DQ bus to the F-RAM array. The falling edge of WE latches a new column address for
page mode write cycles.
CE
Input
Chip Enable: The device is selected and a new memory access begins on the falling edge of CE. The
entire address is latched internally at this point. Subsequent changes to the A2–A0 address inputs allow
page mode operation.
OE
Input
Output Enable: When OE is LOW, the FM28V020 drives the data bus when the valid read data is
available. Deasserting OE HIGH tristates the DQ pins.
VSS
Ground
VDD
NC
Ground for the device. Must be connected to the ground of the system.
Power supply Power supply input to the device.
No connect
No connect. This pin is not connected to the die.
Document Number: 001-86204 Rev. *H
Page 4 of 22
FM28V020
Device Operation
The FM28V020 is a bytewide F-RAM memory logically
organized as 32,768 × 8 and accessed using an
industry-standard parallel interface. All data written to the part is
immediately nonvolatile with no delay. The device offers page
mode operation, which provides high-speed access to
addresses within a page (row). Access to a different page
requires that either CE transitions LOW or the upper address
(A14–A3) changes. See the Functional Truth Table on page 14
for a complete description of read and write modes.
Memory Operation
Users access 32,768 memory locations, each with 8 data bits
through a parallel interface. The F-RAM array is organized as
eight blocks, each having 512 rows. Each row has eight column
locations, which allow fast access in page mode operation.
When an initial address is latched by the falling edge of CE,
subsequent column locations may be accessed without the need
to toggle CE. When CE is deasserted HIGH, a pre-charge
operation begins. Writes occur immediately at the end of the
access with no delay. The WE pin must be toggled for each write
operation. The write data is stored in the nonvolatile memory
array immediately, which is a feature unique to F-RAM called
NoDelay writes.
Input data must be valid when CE is deasserted HIGH. In a
WE-controlled write, the memory cycle begins on the falling edge
of CE. The WE signal falls some time later. Therefore, the
memory cycle begins as a read. The data bus will be driven if OE
is LOW; however, it will be HI-Z when WE is asserted LOW. The
CE and WE controlled write timing cases are shown on the
Figure 9 on page 12. In Figure 10 on page 12, the data bus is
shown as a hi-Z condition while the chip is write-enabled and
before the required setup time. Although this is drawn to look like
a mid-level voltage, it is recommended that all DQ pins comply
with the minimum VIH/VIL operating levels.
Write access to the array begins on the falling edge of WE after
the memory cycle is initiated. The write access terminates on the
rising edge of WE or CE, whichever comes first. A valid write
operation requires the user to meet the access time specification
before deasserting WE or CE. The data setup time indicates the
interval during which data cannot change before the end of the
write access (rising edge of WE or CE).
Unlike other nonvolatile memory technologies, there is no write
delay with F-RAM. Because the read and write access times of
the underlying memory are the same, the user experiences no
delay through the bus. The entire memory operation occurs in a
single bus cycle. Data polling, a technique used with EEPROMs
to determine if a write is complete, is unnecessary.
Read Operation
Page Mode Operation
A read operation begins on the falling edge of CE. The falling
edge of CE causes the address to be latched and starts a
memory read cycle if WE is HIGH. Data becomes available on
the bus after the access time is met. When the address is latched
and the access completed, a new access to a random location
(different row) may begin while CE is still LOW. The minimum
cycle time for random addresses is tRC. Note that unlike SRAMs,
the FM28V020's CE-initiated access time is faster than the
address access time.
The FM28V020 provides the user fast access to any data within
a row element. Each row has eight column-address locations.
Address inputs A2–A0 define the column address to be
accessed. An access can start anywhere within a row and other
column locations may be accessed without the need to toggle
the CE pin. For fast access reads, after the first data byte is
driven to the bus, the column address inputs A2–A0 may be
changed to a new value. A new data byte is then driven to the
DQ pins. For fast access writes, the first write pulse defines the
first write access. While CE is LOW, a subsequent write pulse
along with a new column address provides a page mode write
access.
The FM28V020 will drive the data bus when OE is asserted LOW
and the memory access time is met. If OE is asserted after the
memory access time is met, the data bus will be driven with valid
data. If OE is asserted before completing the memory access,
the data bus will not be driven until valid data is available. This
feature minimizes supply current in the system by eliminating
transients caused by invalid data being driven to the bus. When
OE is deasserted HIGH, the data bus will remain in a HI-Z state.
Write Operation
In the FM28V020, writes occur in the same interval as reads. The
FM28V020 supports both CE and WE controlled write cycles. In
both cases, the address is latched on the falling edge of CE.
In a CE-controlled write, the WE signal is asserted before
beginning the memory cycle. That is, WE is LOW when the
device is activated with the chip enable. In this case, the device
begins the memory cycle as a write. The FM28V020 will not drive
the data bus regardless of the state of OE as long as WE is LOW.
Document Number: 001-86204 Rev. *H
Pre-charge Operation
The pre-charge operation is an internal condition in which the
memory state is prepared for a new access. Pre-charge is
user-initiated by driving the CE signal HIGH. It must remain
HIGH for at least the minimum pre-charge time, tPC.
Pre-charge is also activated by changing the upper addresses,
A14–A3. The current row is first closed before accessing the new
row. The device automatically detects an upper order address
change, which starts a pre-charge operation. The new address
is latched and the new read data is valid within the tAA address
access time; see Figure 6 on page 11. A similar sequence occurs
for write cycles; see Figure 11 on page 12. The rate at which
random addresses can be issued is tRC and tWC, respectively.
Page 5 of 22
FM28V020
SRAM Drop-In Replacement
The FM28V020 is designed to be a drop-in replacement for
standard asynchronous SRAMs. The device does not require CE
to toggle for each new address. CE may remain LOW indefinitely
while VDD is applied. While CE is LOW, the device automatically
detects address changes and a new access begins. It also allows
page mode operation at speeds up to 15 MHz.
A typical application is shown in Figure 4. It shows a pull-up
resistor on CE, which will keep the pin HIGH during power
cycles, assuming the MCU / MPU pin tristates during the reset
condition.The pull-up resistor value should be chosen to ensure
the CE pin tracks VDD to a high enough value, so that the current
drawn when CE is LOW is not an issue. A 10-k resistor draws
330 µA when CE is LOW and VDD = 3.3 V.
Figure 4. Use of Pull-up Resistor on CE
VDD
FM28V020
CE
WE
OE
MCU / MPU
A 14-0
DQ 7-0
Note that if CE is tied to ground, the user must be sure WE is not
LOW at power-up or power-down events. If CE and WE are both
LOW during power cycles, data will be corrupted. Figure 5 shows
a pull-up resistor on WE, which will keep the pin HIGH during
power cycles, assuming the MCU/MPU pin tristates during the
reset condition.The pull-up resistor value should be chosen to
ensure the WE pin tracks VDD to a high enough value, so that
the current drawn when WE is LOW is not an issue. A 10-k
resistor draws 330 µA when WE is LOW and VDD = 3.3 V.
For applications that require the lowest power consumption, the
CE signal should be active only during memory accesses. Due
to the external pull-up resistor, some supply current will be drawn
while CE is LOW. When CE is HIGH, the device draws no more
than the maximum standby current ISB.
CE toggling LOW on every address access is perfectly
acceptable in FM28V020.
Endurance
The FM28V020 is capable of being accessed at least 1014 times
– reads or writes. An F-RAM memory operates with a read and
restore mechanism. Therefore, an endurance cycle is applied on
a row basis. The F-RAM architecture is based on an array of
rows and columns. Rows are defined by A14–3 and column
addresses by A2–A0. The array is organized as 4K rows of eight
bytes each. The entire row is internally accessed once whether
a single byte or all eight bytes are read or written. Each byte in
the row is counted only once in an endurance calculation if the
addressing is contiguous in nature.
The user may choose to write CPU instructions and run them
from a certain address space. Table 1 shows endurance
calculations for a 256-byte repeating loop, which includes a
starting address, seven-page mode accesses, and a CE
pre-charge. The number of bus clock cycles needed to complete
a eight-byte read transaction is 1 + 7 + 1 or 9 clocks. The entire
loop causes each byte to experience only one endurance cycle.
The F-RAM read and write endurance is virtually unlimited.
Table 1. Time to Reach 100 Trillion Cycles for Repeating
256-byte Loop
Bus
Freq
(MHz)
Years
Bus
256-byte
to
Cycle Transaction Endurance Endurance Reach
Time Time (s) Cycles/sec Cycles/yr
1014
(ns)
Cycles
10
100
28.8
34,720
1.09 × 1012
91.7
5
200
57.6
17,360
5.47 × 1011
182.8
Figure 5. Use of Pull-up Resistor on WE
VDD
FM28V020
CE
WE
MCU / MPU
OE
A 14-0
DQ 7-0
Document Number: 001-86204 Rev. *H
Page 6 of 22
FM28V020
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +125 °C
Maximum accumulated storage time
At 125 °C ambient temperature ................................. 1000 h
At 85 °C ambient temperature ................................ 10 Years
Package power dissipation capability
(TA = 25 °C) ................................................................. 1.0 W
Surface mount Pb soldering temperature
(3 seconds) .............................................................. +260 C
DC output current
(1 output at a time, 1s duration) .................................. 15 mA
Ambient temperature
with power applied ................................... –55 °C to +125 °C
Static discharge voltage
Human Body Model (AEC-Q100-002 Rev. E) ............ 2 kV
Charged Device Model (AEC-Q100-011 Rev. B) .. 1.25 kV
Machine Model (AEC-Q100-003 Rev. E) ................. 200 V
Supply voltage on VDD relative to VSS ........–1.0 V to + 4.5 V
Latch-up current ................................................... > 140 mA
Voltage applied to outputs
in High Z state .................................... –0.5 V to VDD + 0.5 V
Operating Range
Range
Input voltage .......... –1.0 V to + 4.5 V and VIN < VDD + 1.0 V
Transient voltage (< 20 ns)
on any pin to ground potential ............ –2.0 V to VCC + 2.0 V
Industrial
Ambient Temperature (TA)
VDD
–40 C to +85 C
2.0 V to 3.6 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
Min
Typ [1]
Max
Unit
2.0
3.3
3.6
V
VDD
Power supply voltage
IDD
VDD supply current
VDD = 3.6 V, CE cycling at min. cycle time. All
inputs toggling at CMOS levels
(0.2 V or VDD – 0.2 V), all DQ pins unloaded.
–
5
8
mA
ISB
Standby current
VDD = 3.6 V, CE at VDD, All other pins are static
and at CMOS levels (0.2 V or VDD – 0.2 V)
–
90
150
µA
ILI
Input leakage current
VIN between VDD and VSS
–
–
+1
µA
ILO
Output leakage current
VOUT between VDD and VSS
–
–
+1
µA
VIH
Input HIGH voltage
0.7 × VDD
–
VDD + 0.3
V
VIL
Input LOW voltage
– 0.3
–
0.3 × VDD
V
VOH1
Output HIGH voltage
IOH = –1.0 mA, VDD > 2.7 V
2.4
–
–
V
VOH2
Output HIGH voltage
IOH = –100 µA
VDD – 0.2
–
–
V
VOL1
Output LOW voltage
IOL = 1 mA, VDD > 2.7 V
–
–
0.4
V
VOL2
Output LOW voltage
IOL = 150 µA
–
–
0.2
V
Note
1. Typical values are at 25 °C, VDD = VDD(typ). Not 100% tested.
Document Number: 001-86204 Rev. *H
Page 7 of 22
FM28V020
Data Retention and Endurance
Parameter
TDR
NVC
Description
Data retention
Endurance
Min
Max
Unit
At +85 C
Test condition
10
–
Years
At +75 C
38
–
At +65 C
151
–
14
–
Cycles
Max
Unit
8
pF
6
pF
Over operating temperature
10
Capacitance
Parameter
Description
CI/O
Input/Output capacitance (DQ)
CIN
Input capacitance
Test Conditions
TA = 25 C, f = 1 MHz, VDD = VDD(Typ)
Thermal Resistance
Parameter
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
Test Conditions
28-pin SOIC
28-pin TSOP I 32-pin TSOP I Unit
Test conditions follow
standard test methods
and procedures for
measuring
thermal
impedance,
in
accordance
with
EIA/JESD51.
59
108
84
C/W
30
29
26
C/W
AC Test Conditions
Input pulse levels ...................................................0 V to 3 V
Input rise and fall times (10%–90%) ........................... < 3 ns
Input and output timing reference levels ....................... 1.5 V
Output load capacitance ............................................... 30 pF
Document Number: 001-86204 Rev. *H
Page 8 of 22
FM28V020
AC Switching Characteristics
Over the Operating Range
Parameters [2]
Cypress
Parameter
Description
Alt Parameter
Min
Max
Unit
–
70
ns
140
–
ns
SRAM Read Cycle
tCE
tACE
Chip enable access time
tRC
–
Read cycle time
tAA
–
Address access time
–
140
ns
tOH
tOHA
Output hold time
20
–
ns
tAAP
–
Page mode address access time
–
40
ns
tOHP
–
Page mode output hold time
3
–
ns
tCA
–
Chip enable active time
70
–
ns
tPC
–
Pre-charge time
70
–
ns
tAS
tSA
Address setup time (to CE LOW)
0
–
ns
tAH
tHA
Address hold time (CE Controlled)
70
–
ns
tOE[3]
tDOE
Output enable access time
–
20
ns
tHZ[4, 5]
tHZCE
Chip Enable to output HI-Z
–
10
ns
tOHZ[4, 5]
tHZOE
Output enable HIGH to output HI-Z
–
10
ns
Notes
2. Test conditions assume a signal transition time of 3 ns or less, timing reference levels of 0.5 × VDD, input pulse levels of 0 to 3 V, output loading of the specified
IOL/IOH and load capacitance shown in AC Test Conditions on page 8.
3. For VDD < 2.7 V, tOE max is 25 ns.
4. tHZ and tOHZ are specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state.
5. This parameter is characterized but not 100% tested.
Document Number: 001-86204 Rev. *H
Page 9 of 22
FM28V020
AC Switching Characteristics (continued)
Over the Operating Range
Parameters [2]
Cypress
Parameter
Description
Alt Parameter
Min
Max
Unit
SRAM Write Cycle
tWC
tWC
Write cycle time
140
–
ns
tCA
–
Chip enable active time
70
–
ns
tCW
tSCE
Chip enable to write enable HIGH
70
–
ns
tPC
–
Pre-charge time
70
–
ns
tPWC
–
Page mode write enable cycle time
35
–
ns
tWP
tPWE
Write enable pulse width
18
–
ns
tAS
tSA
Address setup time (to CE LOW)
0
–
ns
tAH
tHA
Address hold time (CE Controlled)
70
–
ns
tASP
–
Page mode address setup time (to WE LOW)
5
–
ns
tAHP
–
Page mode address hold time (to WE LOW)
20
–
ns
tWLC
tPWE
Write enable LOW to chip disabled
25
–
ns
tWLA
–
Write enable LOW to A14-3 change
25
–
ns
tAWH
–
A14-3 change to write enable HIGH
140
–
ns
tDS
tSD
Data input setup time
15
–
ns
tDH
tHD
Data input hold time
0
–
ns
tWZ[6, 7]
tHZWE
Write enable LOW to output HI-Z
–
10
ns
tWX[7]
–
Write enable HIGH to output driven
5
–
ns
tWS[7, 8]
–
Write enable to CE LOW setup time
0
–
ns
[7, 8]
–
Write enable to CE HIGH hold time
0
–
ns
tWH
Notes
6. tWZ is specified with a load capacitance of 5 pF. Transition is measured when the outputs enter a high impedance state.
7. This parameter is characterized but not 100% tested.
8. The relationship between CE and WE determines if a CE or WE controlled write occurs.
Document Number: 001-86204 Rev. *H
Page 10 of 22
FM28V020
Figure 6. Read Cycle Timing 1 (CE LOW, OE LOW)
tRC
A 14-0
tAA
tOH
DQ 7-0
tOH
Previous Data
Valid Data
Figure 7. Read Cycle Timing 2 (CE Controlled)
tCA
tPC
CE
tAH
tAS
A14-0
tHZ
tOE
OE
tOH
tCE
DQ 7-0
tOHZ
D out
Figure 8. Page Mode Read Cycle Timing [9]
tPC
tCA
CE
tAS
A14-3
A 2-0
Col 0
Col 1
tOE
OE
tAAP
tHZ
tOHP
tCE
DQ 7-0
Col 2
Data 0
tOHZ
Data 1
Data 2
Note
9. Although sequential column addressing is shown, it is not required.
Document Number: 001-86204 Rev. *H
Page 11 of 22
FM28V020
Figure 9. Write Cycle Timing 1 (WE Controlled) [10]
tCA
tPC
tCW
CE
tWLC
tAS
A14-0
tWP
tWX
WE
DQ 7-0
tDH
tDS
tHZ
tWZ
D out
D in
D out
Figure 10. Write Cycle Timing 2 (CE Controlled)
tPC
tCA
CE
tAS
A
tAH
14-0
tWH
tWS
WE
tDH
tDS
DQ 7-0
D in
Figure 11. Write Cycle Timing 3 (CE LOW) [10]
tWC
tAWH
A 14-0
tWLA
WE
tWZ
DQ
7-0
D out
tDH
tWX
tDS
D in
D out
D in
Note
10. OE (not shown) is LOW only to show the effect of WE on DQ pins.
Document Number: 001-86204 Rev. *H
Page 12 of 22
FM28V020
Figure 12. Page Mode Write Cycle Timing
tCA
tPC
tCW
CE
tWLC
tAS
A
14-3
tAH
A 2-0
tASP
tAHP
Col 0
Col 1
Col 2
tPWC
tWP
WE
OE
tDH
tDS
Data 0
DQ 7-0
Data 1
Data 2
Power Cycle Timing
Over the Operating Range
Parameter
tPU
Min
Max
Unit
250
–
µs
Last write (WE HIGH) to power down time
0
–
µs
VDD power-up ramp rate
50
–
µs/V
VDD power-down ramp rate
100
–
µs/V
Power-up (after VDD min. is reached) to first access time
tPD
tVR
Description
[11]
tVF[11]
Figure 13. Power Cycle Timing
VDD
VDD min
VDD min
1.0 V
1.0 V
t VR
t VF
t PU
t PD
Access Allowed
Note
11. Slope measured at any point on the VDD waveform.
Document Number: 001-86204 Rev. *H
Page 13 of 22
FM28V020
Functional Truth Table
Operation [12, 13]
CE
WE
A14–A3
A2–A0
H
X
X
X
Standby/Idle
↓
L
H
H
V
V
V
V
Read
L
H
No Change
Change
L
H
Change
V
Random Read
↓
L
L
L
V
V
V
V
CE-Controlled Write[13]
L
↓
V
V
WE-Controlled Write [13, 14]
L
↓
No Change
V
Page Mode Write [15]
↑
X
X
X
X
X
X
Starts pre-charge
L
Page Mode Read
Notes
12. H = Logic HIGH, L = Logic LOW, V = Valid Data, X = Don't Care, ↓ = toggle LOW, ↑ = toggle HIGH.
13. For write cycles, data-in is latched on the rising edge of CE or WE, whichever comes first.
14. WE-controlled write cycle begins as a Read cycle and then A14-A3 is latched.
15. Addresses A2-A0 must remain stable for at least 15 ns during page mode operation.
Document Number: 001-86204 Rev. *H
Page 14 of 22
FM28V020
Ordering Information
Access
time
(ns)
70
Ordering Code
Package
Diagram
FM28V020-SG
51-85026 28-pin SOIC
FM28V020-SGTR
51-85026 28-pin SOIC
FM28V020-T28G
001-91155 28-pin TSOP I
FM28V020-T28GTR
001-91155 28-pin TSOP I
FM28V020-TG
001-91156 32-pin TSOP I
FM28V020-TGTR
001-91156 32-pin TSOP I
Package Type
Operating
Range
Industrial
All the above parts are Pb-free.
Ordering Code Definitions
FM 28
V
020
-
XX X
Option: X = blank or TR
blank = Standard; TR = Tape and Reel
Package Type: XX = SG or T28G or TG
SG = 28-pin SOIC; T28G = 28-pin TSOP I; TG = 32-pin TSOP I
Density: 020 = 256-Kbit
Voltage: V = 2.0 V to 3.6 V
Parallel F-RAM
Cypress
Document Number: 001-86204 Rev. *H
Page 15 of 22
FM28V020
Package Diagrams
Figure 14. 28-pin SOIC Package Outline, 51-85026
51-85026 *H
Document Number: 001-86204 Rev. *H
Page 16 of 22
FM28V020
Package Diagrams (continued)
Figure 15. 28-pin TSOP I Package Outline, 001-91155
001-91155 **
Document Number: 001-86204 Rev. *H
Page 17 of 22
FM28V020
Package Diagrams (continued)
Figure 16. 32-pin TSOP I Package Outline, 001-91156
001-91156 **
Document Number: 001-86204 Rev. *H
Page 18 of 22
FM28V020
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CPU
Central Processing Unit
CMOS
Complementary Metal Oxide Semiconductor
°C
degree Celsius
JEDEC
Joint Electron Devices Engineering Council
Hz
hertz
JESD
JEDEC Standards
kHz
kilohertz
EIA
Electronic Industries Alliance
k
kilohm
F-RAM
Ferroelectric Random Access Memory
MHz
megahertz
I/O
Input/Output
A
microampere
MCU
Microcontroller Unit
F
microfarad
MPU
Microprocessor Unit
s
microsecond
RoHS
Restriction of Hazardous Substances
mA
milliampere
RW
Read and Write
ms
millisecond
SRAM
Static Random Access Memory
M
megaohm
ns
nanosecond
TSOP
Thin Small Outline Package
ohm
%
percent
pF
picofarad
V
volt
W
watt
Document Number: 001-86204 Rev. *H
Symbol
Unit of Measure
Page 19 of 22
FM28V020
Document History Page
Document Title: FM28V020, 256-Kbit (32K × 8) F-RAM Memory
Document Number: 001-86204
Rev.
ECN No.
Orig. of
Change
Submission
Date
**
3912932
GVCH
02/25/2013
New spec.
*A
3924836
GVCH
03/07/2013
Changed to Production status
Added 28-pin TSOP package related information in all instances across the
document.
Updated DC Electrical Characteristics:
Changed typical value of IDD parameter from 7 mA to 5 mA.
Changed maximum value of IDD parameter from 12 mA to 8 mA.
Updated AC Switching Characteristics:
SRAM Read Cycle:
Changed maximum value of tAAP parameter from 60 ns to 40 ns.
Changed maximum value of tOE parameter from 15 ns to 20 ns.
SRAM Write Cycle:
Changed minimum value of tPWC parameter from 30 ns to 35 ns.
Changed minimum value of tAHP parameter from 15 ns to 20 ns.
Updated Ordering Information:
Updated part numbers
Description of Change
*B
4000965
GVCH
05/15/2013
Added Appendix A - Errata for FM28V020.
*C
4045491
GVCH
06/30/2013
All errata items are fixed and the errata is removed.
*D
4274812
GVCH
03/11/2014
Updated Maximum Ratings:
Added “Maximum Junction Temperature” and its corresponding details.
Added “DC voltage applied to outputs in High-Z state” and its corresponding
details.
Added “Transient voltage (< 20 ns) on any pin to ground potential” and its
corresponding details.
Added “Package power dissipation capability (TA = 25 °C)” and its
corresponding details.
Added “DC output current (1 output at a time, 1s duration)” and its
corresponding details.
Added “Latch-up Current” and its corresponding details.
Removed “Package Moisture Sensitivity Level” and its corresponding
details.
Updated Data Retention and Endurance:
Removed existing details of TDR parameter.
Added details of TDR parameter corresponding to “TA = 85 °C”, “TA = 75 °C”
and “TA = 65 °C”.
Added NVC parameter and its corresponding details.
Added Thermal Resistance.
Updated Package Diagrams:
Removed Package Marking Scheme (top mark).
Removed “Ramtron Revision History”.
Updated to Cypress template.
Completing Sunset Review.
Document Number: 001-86204 Rev. *H
Page 20 of 22
FM28V020
Document History Page (continued)
Document Title: FM28V020, 256-Kbit (32K × 8) F-RAM Memory
Document Number: 001-86204
Rev.
ECN No.
Orig. of
Change
Submission
Date
Description of Change
*E
4582540
GVCH
11/28/2014
Updated Functional Description:
Added “For a complete list of related documentation, click here.” at the end.
Updated Pinouts:
Updated Figure 3:
Fixed typo (Replaced VDD with NC for pin 32).
Updated Package Diagrams:
spec 51-85026 – Changed revision from *G to *H.
*F
4881722
ZSK / PSR
08/12/2015
Updated Maximum Ratings:
Removed “Maximum junction temperature” and its corresponding details.
Added “Maximum accumulated storage time” and its corresponding details.
Added “Ambient temperature with power applied” and its corresponding
details.
Updated to new template.
*G
5718305
AESATMP7
04/28/2017
Updated Cypress Logo and Copyright.
*H
6389368
GVCH
11/20/2018
Updated Maximum Ratings:
Replaced “–55 °C to +125 °C” with “–65 °C to +125 °C” in ratings
corresponding to “Storage temperature”.
Updated to new template.
Document Number: 001-86204 Rev. *H
Page 21 of 22
FM28V020
Sales, Solutions, and Legal Information
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All other trademarks or registered trademarks referenced herein are the property of their respective owners.
© Cypress Semiconductor Corporation, 2013–2018. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC (“Cypress”). This document,
including any software or firmware included or referenced in this document (“Software”), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries
worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other
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hereby grants you a personal, non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code form, to
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Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in
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Document Number: 001-86204 Rev. *H
Revised November 20, 2018
Page 22 of 22
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