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S25FL128LAGMFI013

S25FL128LAGMFI013

  • 厂商:

    CYPRESS(赛普拉斯)

  • 封装:

    SOIC-8_5.24X5.29MM

  • 描述:

    IC FLASH 128MBIT SPI/QUAD 8SOIC

  • 数据手册
  • 价格&库存
S25FL128LAGMFI013 数据手册
Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as “Cypress” document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.com S25FL256L/S25FL128L 256-Mb (32-MB)/128-Mb (16-MB), 3.0 V FL-L Flash Memory General Description The Cypress FL-L Family devices are Flash non-volatile memory products using: ■ Floating Gate technology ■ 65 nm process lithography The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO) and Quad Peripheral Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock. The architecture features a Page Programming Buffer that allows up to 256-bytes to be programmed in one operation and provides individual 4KB sector, 32KB half block, 64KB block, or entire chip erase. By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically. The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections, and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly (XIP), and storing re-programmable data. Features ■ Serial Peripheral Interface (SPI) with Multi-I/O ❐ Clock polarity and phase modes 0 and 3 ❐ Double Data Rate (DDR) option ❐ Quad peripheral Interface (QPI) option ❐ Extended Addressing: 24- or 32-bit address options ❐ Serial Command subset and footprint compatible with S25FL-A, S25FL1-K, S25FL-P, S25FL-S and S25FS-S SPI families ❐ Multi I/O Command subset and footprint compatible with S25FL-P, S25FL-S and S25FS-S SPI families ■ Read ❐ Commands: Normal, Fast, Dual I/O, Quad I/O, DualO, QuadO, DDR Quad I/O. ❐ Modes: Burst Wrap, Continuous (XIP), QPI ❐ Serial Flash Discoverable Parameters (SFDP) for configuration information. ■ Program Architecture ❐ 256 Bytes Page Programming buffer ❐ 3.0 V FL-L Flash Memory ❐ Program suspend and resume ■ Erase Architecture ❐ Uniform 4 KB Sector Erase ❐ Uniform 32 KB Half Block Erase ❐ Uniform 64 KB Block Erase ❐ Chip erase ❐ Erase suspend and resume ■ 100,000 Program/Erase Cycles, minimum ■ 20 Year Data Retention, minimum Cypress Semiconductor Corporation Document Number: 002-00124 Rev. *H • ■ Security features ❐ Status and Configuration Register Protection ❐ Four Security Regions of 256 bytes each outside the main Flash array ❐ Legacy Block Protection: Block range ❐ Individual and Region Protection • Individual Block Lock: Volatile individual Sector/Block • Pointer Region: Non-Volatile Sector/Block range • Power Supply Lock-down, Password, or Permanent protection of Security Regions 2 and 3 and Pointer Region ■ Technology ❐ 65 nm Floating Gate Technology ■ Single Supply Voltage with CMOS I/O ❐ 2.7 V to 3.6 V ■ Temperature Range / Grade ❐ Industrial (–40 °C to +85 °C) ❐ Industrial Plus (–40 °C to +105 °C) ❐ Automotive, AEC-Q100 Grade 3 (–40 °C to +85 °C) ❐ Automotive, AEC-Q100 Grade 2 (–40 °C to +105 °C) ❐ Automotive, AEC-Q100 Grade 1 (–40 °C to +125 °C) ■ Packages (all Pb-free) ❐ 8-pin SOIC 208 mil (SOC008) — S25FL128L only ❐ WSON 5  6 mm (WND008) — S25FL128L only ❐ WSON 6  8 mm (WNG008) — S25FL256L only ❐ 16-pin SOIC 300 mil (SO3016) ❐ BGA-24 6  8 mm • 5  5 ball (FAB024) footprint • 4  6 ball (FAC024) footprint 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised July 11, 2018 S25FL256L/S25FL128L Performance Summary Maximum Read Rates SDR Command Clock Rate (MHz) MBps Read 50 6.25 Fast Read 133 16.5 Dual Read 133 33 Quad Read 133 66 Clock Rate (MHz) MBps 66 66 Maximum Read Rates DDR Command DDR Quad Read Typical Program and Erase Rates Operation KBps Page Programming 854 4 KB Sector Erase 80 32 KB Half Block Erase 168 64 KB Block Erase 237 Typical Current Consumption, –40 °C to +85 °C Operation Typical Current Fast Read 5 MHz 10 Fast Read 10 MHz 10 Fast Read 20 MHz 10 Fast Read 50 MHz 15 Fast Read 108 MHz 25 Fast Read 133 MHz 30 Quad I/O / QPI Read 108 MHz 25 Quad I/O / QPI Read 133 MHz 30 Quad I/O / QPI DDR Read 33 MHz 15 Quad I/O / QPI DDR Read 66 MHz 30 Program 40 Erase 40 Standby SPI 20 Standby QPI 60 Deep Power Down 2 Document Number: 002-00124 Rev. *H Unit mA µA Page 2 of 160 S25FL256L/S25FL128L Contents 1. 1.1 Product Overview ........................................................ 4 Migration Notes.............................................................. 4 2. 2.1 2.2 2.3 2.4 Connection Diagrams.................................................. SOIC 16-Lead ................................................................ 8 Connector Packages................................................... BGA Ball Footprint ......................................................... Special Handling Instructions for FBGA Packages........ 3. 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 3.10 3.11 3.12 3.13 3.14 Signal Descriptions ..................................................... 7 Input/Output Summary................................................... 7 Multiple Input / Output (MIO).......................................... 8 Serial Clock (SCK) ......................................................... 8 Chip Select (CS#) .......................................................... 8 Serial Input (SI) / IO0 ..................................................... 8 Serial Output (SO) / IO1................................................. 8 Write Protect (WP#) / IO2 .............................................. 8 IO3 / RESET# ................................................................ 9 RESET# ......................................................................... 9 Voltage Supply (VCC)..................................................... 9 Supply and Signal Ground (VSS) ................................... 9 Not Connected (NC) ...................................................... 9 Reserved for Future Use (RFU)................................... 10 Do Not Use (DNU) ....................................................... 10 4. 4.1 Block Diagram............................................................ 11 System Block Diagrams............................................... 11 5. 5.1 5.2 5.3 5.4 Signal Protocols......................................................... SPI Clock Modes ......................................................... Command Protocol ...................................................... Interface States............................................................ Data Protection ............................................................ 6. 6.1 6.2 6.3 6.4 6.5 6.6 Address Space Maps................................................. 23 Overview ...................................................................... 23 Flash Memory Array..................................................... 23 ID Address Space ........................................................ 24 JEDEC JESD216 Serial Flash Discoverable Parameters (SFDP) Space.............................................................. 24 Security Regions Address Space ................................ 24 Registers...................................................................... 25 7. 7.1 7.2 7.3 7.4 7.5 7.6 7.7 Data Protection .......................................................... Security Regions.......................................................... Deep Power Down ....................................................... Write Enable Commands ............................................. Write Protect Signal ..................................................... Status Register Protect (SRP1, SRP0)........................ Array Protection ........................................................... Individual and Region Protection ................................. 43 43 43 44 44 45 46 53 8. 8.1 8.2 8.3 8.4 8.5 Commands ................................................................. Command Set Summary.............................................. Identification Commands ............................................. Register Access Commands........................................ Read Memory Array Commands ................................. Program Flash Array Commands ................................ 58 58 64 68 82 90 Document Number: 002-00124 Rev. *H 5 5 5 6 6 13 13 14 18 22 8.6 8.7 8.8 8.9 8.10 8.11 8.12 Erase Flash Array Commands...................................... 92 Security Regions Array Commands............................ 100 Individual Block Lock Commands ............................... 102 Pointer Region Command........................................... 107 Individual and Region Protection (IRP) Commands ... 108 Reset Commands ....................................................... 115 Deep Power Down Commands................................... 116 9. 9.1 9.2 Data Integrity ............................................................. 119 Erase Endurance ........................................................ 119 Data Retention ............................................................ 119 10. Software Interface Reference .................................. 120 10.1 JEDEC JESD216B Serial Flash Discoverable Parameters ................................................................. 120 10.2 Device ID Address Map .............................................. 129 10.3 Initial Delivery State .................................................... 129 11. 11.1 11.2 11.3 11.4 11.5 11.6 Electrical Specifications........................................... 130 Absolute Maximum Ratings ........................................ 130 Latchup Characteristics .............................................. 130 Thermal Resistance .................................................... 130 Operating Ranges....................................................... 131 Power-Up and Power-Down ....................................... 132 DC Characteristics ...................................................... 134 12. 12.1 12.2 12.3 12.4 12.5 12.6 Timing Specifications............................................... 137 Key to Switching Waveforms ...................................... 137 AC Test Conditions ..................................................... 137 Reset .......................................................................... 138 SDR AC Characteristics ............................................. 141 DDR AC Characteristics ............................................. 144 Embedded Algorithm Performance Tables ................. 146 13. Ordering Information ................................................ 147 13.1 Ordering Part Number................................................. 147 14. 14.1 14.2 14.3 14.4 14.5 14.6 Physical Diagrams .................................................... 150 SOIC 16-Lead, 300-mil Body Width (SO3016) ........... 150 SOIC 8-Lead, 208 mil Body Width (SOC008)............. 151 WSON 8-Contact 5 x 6 mm Leadless (WND008) ....... 152 WSON 8-Contact 6 x 8 mm Leadless (WNG008)....... 153 Ball Grid Array 24-ball 6 x 8 mm (FAB024)................. 154 Ball Grid Array 24-ball 6 x 8 mm (FAC024) ................ 155 15. 15.1 15.2 15.3 15.4 Other Resources ....................................................... 156 Glossary...................................................................... 156 Link to Cypress Flash Roadmap................................. 157 Link to Software .......................................................... 157 Link to Application Notes ............................................ 157 16. Document History ..................................................... 158 Sales, Solutions, and Legal Information ......................... 160 Worldwide Sales and Design Support .......................... 160 Products ....................................................................... 160 PSoC® Solutions ......................................................... 160 Cypress Developer Community .................................... 160 Technical Support ........................................................ 160 Page 3 of 160 S25FL256L/S25FL128L 1. Product Overview 1.1 Migration Notes 1.1.1 Features Comparison The FL-L family is command subset and footprint compatible with prior generation FL-S, FL1-K and FL-P families. Table 1. Cypress SPI Families Comparison Parameter Technology Node FL-L FL-S FL1-K FL-P 65 nm 65 nm 90 nm 90 nm MirrorBit Eclipse™ Floating Gate MirrorBit® ® Architecture Floating Gate Release Date In Production In Production In Production In Production 256 Mb 128 Mb - 1 Gb 4 Mb - 64 Mb 32 Mb - 256 Mb x1, x2, x4 x1, x2, x4 x1, x2, x4 x1, x2, x4 2.7 V - 3.6 V 2.7 V - 3.6 V / 1.65 V - 3.6 V VIO 2.7 V - 3.6 V 2.7 V - 3.6 V 6 MBps (50 MHz) 6 MBps (50 MHz) 6 MBps (50 MHz) 5 MBps (40 MHz) Density Bus Width Supply Voltage Normal Read Speed Fast Read Speed 16.5 MBps (133 MHz) 17 MBps (133 MHz) 13 MBps (108 MHz) 13 MBps (104 MHz) Dual Read Speed 33 MBps (133 MHz) 26 MBps (104 MHz) 26 MBps (108 MHz) 20 MBps (80 MHz) Quad Read Speed 66 MBps (133 MHz) 52 MBps (104 MHz) 52 MBps (108 MHz) 40 MBps (80 MHz) Quad Read Speed (DDR) 66 MBps (66 MHz) 80 MBps (80 MHz) – – Program Buffer Size 256B 256B / 512B 256B 256B 4 KB / 32 KB / 64 KB 64 KB / 256 KB 4 KB / 64 KB 64 KB / 256 KB - 4 KB (option) – 4 KB Sector / Block Erase Rate (typ.) 80 KBps (4 KB) 168 KBps (32 KB 237 KBps (64 KB) 500 KBps 136 KBps (4 KB) 437 KBps (64 KB) 130 KBps Page Programming Rate (typ.) 854 KBps (256B) 1.2 MBps (256B) 1.5 MBps (512B) 365 KBps 170 KBps 1024B 1024B 768B (3  256B) 506B Erase Sector/Block Size Parameter Sector Size Security Region / OTP Individual and Region Protection or Advanced Sector Protection No Yes Erase Suspend/Resume Yes Program Suspend/Resume Operating Temperature No Yes –40 °C to +85 °C –40 °C to +105 °C –40 °C to +125 °C –40 °C to +85 °C –40 °C to +105 °C –40 °C to +85 °C –40 °C to +85 °C –40 °C to +105 °C Note 1. Refer to individual datasheets for further details. Document Number: 002-00124 Rev. *H Page 4 of 160 S25FL256L/S25FL128L 2. Connection Diagrams 2.1 SOIC 16-Lead Figure 1. 16-Lead SOIC Package (SO3016), Top View IO3 / RESET# 1 16 SCK VCC 2 15 SI / IO0 RESET# 3 14 RFU NC 4 13 DNU SOIC 16 NC 5 12 DNU RFU 6 11 DNU CS# 7 10 VSS SO / IO1 8 9 WP# / IO2 Note 2. The RESET# and IO3 / RESET# inputs have an internal pull-up and may be left unconnected in the system if quad mode, mode and hardware reset are not in use. 2.2 8 Connector Packages Figure 2. 8-Pin Plastic Small Outline Package (SOIC8) CS# 1 8 V CC SO  / IO 1 2 7 IO 3 / RESET# SO IC W P# / IO 2 3 6 SCK V SS 4 5 SI / IO 0 Figure 3. 8-Connector Package (WSON 6 x 8) (WSON 5 x 6), Top View C S# 1 8 VCC S O  / IO 1 2 7 IO 3  / R ES ET# W P #  / IO 2 3 6 SC K VSS 4 5 S I / IO 0 W SO N Note 3. The RESET# input has an internal pull-up and may be left unconnected in the system if quad mode and hardware reset are not in use. Document Number: 002-00124 Rev. *H Page 5 of 160 S25FL256L/S25FL128L 2.3 BGA Ball Footprint Figure 4. 24-Ball BGA, 5 x 5 Ball Footprint (FAB024), Top View 1 2 3 4 5 A NC NC RESET# NC DNU SCK VSS VCC NC DNU CS# RFU WP#/IO2 NC DNU SO/IO1 NC NC B C D SI/IO0 IO3/RESET# NC E NC RFU NC Notes 4. Signal connections are in the same relative positions as FAC024 BGA, allowing a single PCB footprint to use either package. 5. The RESET# input has an internal pull-up and may be left unconnected in the system if quad mode and hardware reset are not in use. Figure 5. 24-Ball BGA, 4 x 6 Ball Footprint (FAC024), Top View 1 2 3 4 NC NC NC RESET# DNU SCK VSS VCC DNU CS# RFU WP#/IO2 DNU SO/IO1 NC NC NC RFU NC NC NC NC A B C D SI/IO0 IO3/RESET# E F Note 6. The RESET# input has an internal pull-up and may be left unconnected in the system if quad mode and hardware reset are not in use. 2.4 Special Handling Instructions for FBGA Packages Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. Document Number: 002-00124 Rev. *H Page 6 of 160 S25FL256L/S25FL128L 3. Signal Descriptions Serial Peripheral Interface with Multiple Input / Output (SPI-MIO) Many memory devices connect to their host system with separate parallel control, address, and data signals that require a large number of signal connections and larger package size. The large number of connections increase power consumption due to so many signals switching and the larger package increases cost. The FL-L family reduces the number of signals for connection to the host system by serially transferring all control, address, and data information over 6 signals. This reduces the cost of the memory package, reduces signal switching power, and either reduces the host connection count or frees host connectors for use in providing other features. The FL-L family uses the industry standard single bit SPI and also supports optional extension commands for two bit (Dual) and four bit (Quad) wide serial transfers. This multiple width interface is called SPI Multi-I/O or SPI-MIO. 3.1 Input/Output Summary Table 2. Signal List Signal Name Type Description RESET# Input Hardware Reset: Low = device resets and returns to standby state, ready to receive a command. The signal has an internal pull-up resistor and may be left unconnected in the host system if not used. SCK Input Serial Clock. CS# Input SI / IO0 I/O SO / IO1 I/O Chip Select. Serial Input for single bit data commands or IO0 for Dual or Quad commands. Serial Output for single bit data commands. IO1 for Dual or Quad commands. Write Protect when not in Quad mode (CR1V[1] = 0 and SR1NV[7] = 1). IO2 when in Quad mode (CR1V[1] = 1). WP# / IO2 I/O The signal has an internal pull-up resistor and may be left unconnected in the host system if not used for Quad commands or write protection. If write protection is enabled by SR1NV[7] = 1 and CR1V[1] = 0, the host system is required to drive WP# high or low during a WRR or WRAR command. IO3 in Quad-I/O mode, when Configuration Register 1 QUAD bit, CR1V[1] =1, or in QPI mode, when Configuration Register 2 QPI bit, CR2V[3] =1 and CS# is low. IO3 / RESET# I/O RESET# when enabled by CR2V[7]=1 and not in Quad-I/O mode, CR1V[1] = 0, or when enabled in quad mode, CR1V[1] = 1 and CS# is high. The signal has an internal pull-up resistor and may be left unconnected in the host system if not used for Quad commands or RESET#. VCC Supply Power Supply. VSS Supply Ground. NC Unused Not Connected. No device internal signal is connected to the package connector nor is there any future plan to use the connector for a signal. The connection may safely be used for routing space for a signal on a Printed Circuit Board (PCB). However, any signal connected to an NC must not have voltage levels higher than VCC. RFU Reserved for Future Use. No device internal signal is currently connected to the package connector but there is Reserved potential future use of the connector for a signal. It is recommended to not use RFU connectors for PCB routing channels so that the PCB may take advantage of future enhanced features in compatible footprint devices. DNU Do Not Use. A device internal signal may be connected to the package connector. The connection may be used by Cypress for test or other purposes and is not intended for connection to any host system signal. Any DNU signal Reserved related function will be inactive when the signal is at VIL. The signal has an internal pull-down resistor and may be left unconnected in the host system or may be tied to VSS. Do not use these connections for PCB signal routing channels. Do not connect any host system signal to this connection. Note 7. Inputs with internal pull-ups or pull-downs drive less than 2 A. Only during power-up is the current larger at 150 A for 4 S. Resistance of pull-ups or pull-down resistors with the typical process at Vcc = 3.3 V at –40°C is ~4.5 M and at 90°C is ~6.6 M. Document Number: 002-00124 Rev. *H Page 7 of 160 S25FL256L/S25FL128L 3.2 Multiple Input / Output (MIO) Traditional SPI single bit wide commands (Single or SIO) send information from the host to the memory only on the Serial Input (SI) signal. Data may be sent back to the host serially on the Serial Output (SO) signal. Dual or Quad Input / Output (I/O) commands send instructions to the memory only on the SI/IO0 signal. Address or data is sent from the host to the memory as bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3. QPI mode transfers all instructions, addresses, and data from the host to the memory as four bit (nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as four bit (nibble) groups on IO0, IO1, IO2, and IO3. 3.3 Serial Clock (SCK) This input signal provides the synchronization reference for the SPI interface. Instructions, addresses, or data input are latched on the rising edge of the SCK signal. Data output changes after the falling edge of SCK, in SDR commands. 3.4 Chip Select (CS#) The chip select signal indicates when a command is transferring information to or from the device and the other signals are relevant for the memory device. When the CS# signal is at the logic high state, the device is not selected and all input signals are ignored and all output signals are high impedance. The device will be in the Standby Power mode, unless an internal embedded operation is in progress. An embedded operation is indicated by the Status Register 1 Write-In-Progress bit (SR1V[0]) set to 1, until the operation is completed. Some example embedded operations are: Program, Erase, or Write Registers (WRR) operations. Driving the CS# input to the logic low state enables the device, placing it in the Active Power mode. After Power-up, a falling edge on CS# is required prior to the start of any command. 3.5 Serial Input (SI) / IO0 This input signals used to transfer data serially into the device. It receives instructions, addresses, and data to be programmed. Values are latched on the rising edge of serial SCK clock signal. SI becomes IO0 - an input and output during Dual and Quad commands for receiving instructions, addresses, and data to be programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK, in SDR commands, and on every edge of SCK, in DDR commands). 3.6 Serial Output (SO) / IO1 This output signals used to transfer data serially out of the device. Data is shifted out on the falling edge of the serial SCK clock signal. SO becomes IO1 - an input and output during Dual and Quad commands for receiving addresses, and data to be programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK in SDR commands, and on every edge of SCK, in DDR commands). 3.7 Write Protect (WP#) / IO2 When WP# is driven Low (VIL), when the Status Register Protect 0 (SRP0_NV) or (SRP0) bit of Status Register 1 (SR1NV[7]) or (SR1V[7]) is set to a 1, it is not possible to write to Status Registers, Configuration Registers or DLR registers. In this situation, the command selecting SR1NV, SR1V, CR1NV,CR1V, CR2NV, CR2V, CR3NV, DLRNV and DLRV is ignored, and no error is set. This prevents any alteration of the Legacy Block Protection settings. As a consequence, all the data bytes in the memory area that are protected by the Legacy Block Protection feature are also hardware protected against data modification if WP# is Low during commands changing Status Registers, Configuration Registers or DLR registers, with SRP0_NV set to 1. Similarly, the Security Region Lock Bits (LB3-LB0) are protected against programming. The WP# function is not available when the Quad mode is enabled (CR1V[1]=1) or QPI mode is enabled (CR2V[3]=1). The WP# function is replaced by IO2 for input and output during Quad mode or QPI mode is enabled (CR2V[3]=1) for receiving addresses, and data to be programmed (values are latched on rising edge of the SCK signal) as well as shifting out data on the falling edge of SCK, in SDR commands, and on every edge of SCK, in DDR commands). WP# has an internal pull-up resistance; when unconnected, WP# is at VIH and may be left unconnected in the host system if not used for Quad mode or QPI mode or protection. Document Number: 002-00124 Rev. *H Page 8 of 160 S25FL256L/S25FL128L 3.8 IO3 / RESET# IO3 is used for input and output during Quad mode (CR1V[1]=1) or QPI mode is enabled (CR2V[3]=1) for receiving addresses, and data to be programmed (values are latched on rising edge of the SCK signal) as well as shifting out data (on the falling edge of SCK, in SDR commands, and on every edge of SCK, in DDR commands). The IO3 / RESET# input may also be used to initiate the hardware reset function when the IO3 / RESET# feature is enabled by writing Configuration Register 2 non-volatile bit 7 (CR2NV[7]=1). The input is only treated as RESET# when the device is not in Quad modes (114,144,444), CR1V[1] = 0, or when CS# is high. When Quad modes are in use, CR1V[1]=1or QPI mode is enabled (CR2V[3]=1), and the device is selected with CS# low, the IO3 / RESET# is used only as IO3 for information transfer. When CS# is high, the IO3 / RESET# is not in use for information transfer and is used as the reset input. By conditioning the reset operation on CS# high during Quad modes (114,144,444), the reset function remains available during Quad modes (114,144,444). When the system enters a reset condition, the CS# signal must be driven high as part of the reset process and the IO3 / RESET# signal is driven low. When CS# goes high the IO3 / RESET# input transitions from being IO3 to being the reset input. The reset condition is then detected when CS# remains high and the IO3 / RESET# signal remains low for tRP. If a reset is not intended, the system is required to actively drive IO3 / RESET# to high along with CS# being driven high at the end of a transfer of data to the memory. Following transfers of data to the host system, the memory will drive IO3 high during tCS. This will ensure that IO3 / RESET# is not left floating or being pulled slowly to high by the internal or an external passive pull-up. Thus, an unintended reset is not triggered by the IO3 / RESET# not being recognized as high before the end of tRP. The IO3 / RESET# input reset feature is disabled when (CR2V[7]=0). The IO3 / RESET# input has an internal pull-up resistor and may be left unconnected in the host system if not used for Quad mode or the reset function. The internal pull-up will hold IO3 / RESET# high after the host system has actively driven the signal high and then stops driving the signal. Note that IO3 / RESET# input cannot be shared by more than one SPI-MIO memory if any of them are operating in Quad I/O mode as IO3 being driven to or from one selected memory may look like a reset signal to a second non-selected memory sharing the same IO3 / RESET# signal. 3.9 RESET# The RESET# input provides a hardware method of resetting the device to standby state, ready for receiving a command. When RESET# is driven to logic low (VIL) for at least a period of tRP, the device starts the hardware reset process. RESET# causes the same initialization process as is performed when power comes up and requires tPU time. RESET# may be asserted low at any time. To ensure data integrity any operation that was interrupted by a hardware reset should be reinitiated once the device is ready to accept a command sequence. RESET# has an internal pull-up resistor and may be left unconnected in the host system if not used. The internal pull-up will hold Reset high after the host system has actively driven the signal high and then stops driving the signal. The RESET# input is not available on all packages options. When not available the RESET# input of the device is tied to the inactive state. 3.10 Voltage Supply (VCC) VCC is the voltage source for all device internal logic. It is the single voltage used for all device internal functions including read, program, and erase. 3.11 Supply and Signal Ground (VSS) VSS is the common voltage drain and ground reference for the device core, input signal receivers, and output drivers. 3.12 Not Connected (NC) No device internal signal is connected to the package connector nor is there any future plan to use the connector for a signal. The connection may safely be used for routing space for a signal on a Printed Circuit Board (PCB). Document Number: 002-00124 Rev. *H Page 9 of 160 S25FL256L/S25FL128L 3.13 Reserved for Future Use (RFU) No device internal signal is currently connected to the package connector but there is potential future use of the connector. It is recommended to not use RFU connectors for PCB routing channels so that the PCB may take advantage of future enhanced features in compatible footprint devices. 3.14 Do Not Use (DNU) A device internal signal may be connected to the package connector. The connection may be used by Cypress for test or other purposes and is not intended for connection to any host system signal. Any DNU signal related function will be inactive when the signal is at VIL. The signal has an internal pull-down resistor and may be left unconnected in the host system or may be tied to VSS. Do not use these connections for PCB signal routing channels. Do not connect any host system signal to these connections. Document Number: 002-00124 Rev. *H Page 10 of 160 S25FL256L/S25FL128L 4. Block Diagram Figure 6. Logic Block Diagram X Decoders CS# SCK SI/IO0 SO/IO1 Memory Array Y Decoders I/O Data Latch WP#/IO2 Control Logic RESET#/IO3 Data Path RESET# 4.1 System Block Diagrams Figure 7. Bus Master and Memory Devices on the SPI Bus — Single Bit Data Path RESET# WP# RESET# WP# SI SO SCK SI SO SCK CS2# CS1# CS# CS# SPI Bus Master SPI Flash SPI Flash Figure 8. Bus Master and Memory Devices on the SPI Bus — Dual Bit Data Path RESET# WP# RESET# WP# IO1 IO0 SCK IO1 IO0 SCK CS2# CS1# SPI Bus Master Document Number: 002-00124 Rev. *H CS# CS# SPI Flash SPI Flash Page 11 of 160 S25FL256L/S25FL128L Figure 9. Bus Master and Memory Devices on the SPI Bus — Quad Bit Data Path — Separate RESET# RESET# IO3 IO2 IO1 IO0 SCK RESET# IO3 IO2 IO1 IO0 SCK CS2# CS1# SPI Bus Master CS# CS# SPI Flash SPI Flash Figure 10. Bus Master and Memory Devices on the SPI Bus — Quad Bit Data Path — I/O3 / RESET# IO3 / RESET# IO2 IO1 IO0 SCK CS# SPI Bus Master Document Number: 002-00124 Rev. *H IO3 / RESET# IO2 IO1 IO0 SCK CS# SPI Flash Page 12 of 160 S25FL256L/S25FL128L 5. 5.1 Signal Protocols SPI Clock Modes 5.1.1 Single Data Rate (SDR) The FL-L family can be driven by an embedded micro-controller (bus master) in either of the two following clocking modes. ■ Mode 0 with Clock Polarity (CPOL) = 0 and, Clock Phase (CPHA) = 0 ■ Mode 3 with CPOL = 1 and, CPHA = 1 For these two modes, input data into the device is always latched in on the rising edge of the SCK signal and the output data is always available from the falling edge of the SCK clock signal. The difference between the two modes is the clock polarity when the bus master is in standby mode and not transferring any data. ■ SCK will stay at logic low state with CPOL = 0, CPHA = 0 ■ SCK will stay at logic high state with CPOL = 1, CPHA = 1 Figure 11. SPI SDR Modes Supported CPOL=0_CPHA=0_SCLK CPOL=1_CPHA=1_SCLK CS# SI_IO0 MSb SO_IO1 MSb Timing diagrams throughout the remainder of the document are generally shown as both mode 0 and 3 by showing SCK as both high and low at the fall of CS#. In some cases a timing diagram may show only mode 0 with SCK low at the fall of CS#. In such a case, mode 3 timing simply means clock is high at the fall of CS# so no SCK rising edge set up or hold time to the falling edge of CS# is needed for mode 3. SCK cycles are measured (counted) from one falling edge of SCK to the next falling edge of SCK. In mode 0 the beginning of the first SCK cycle in a command is measured from the falling edge of CS# to the first falling edge of SCK because SCK is already low at the beginning of a command. 5.1.2 Double Data Rate (DDR) Mode 0 and Mode 3 are also supported for DDR commands. In DDR commands, the instruction bits are always latched on the rising edge of clock, the same as in SDR commands. However, the address and input data that follow the instruction are latched on both the rising and falling edges of SCK. The first address bit is latched on the first rising edge of SCK following the falling edge at the end of the last instruction bit. The first bit of output data is driven on the falling edge at the end of the last access latency (dummy) cycle. SCK cycles are measured (counted) in the same way as in SDR commands, from one falling edge of SCK to the next falling edge of SCK. In mode 0 the beginning of the first SCK cycle in a command is measured from the falling edge of CS# to the first falling edge of SCK because SCK is already low at the beginning of a command. Figure 12. SPI DDR Modes Supported CPOL=0_CPHA=0_SCLK CPOL=1_CPHA=1_SCLK CS# Transfer_Phase IO0 Instruction Inst. 0 Mode Dummy / DLP A28 A24 A0 M4 M0 DLP. DLP. D0 D1 IO1 A29 A25 A1 M5 M1 DLP. DLP. D0 D1 IO2 A30 A26 A2 M6 M2 DLP. DLP. D0 D1 IO3 A31 A27 A3 M7 M3 DLP. DLP. D0 D1 Document Number: 002-00124 Rev. *H Inst. 7 Address Page 13 of 160 S25FL256L/S25FL128L 5.2 Command Protocol All communication between the host system and FL-L family memory devices is in the form of units called commands. See Section 8. Commands on page 58 for definition and details for all commands. All commands begin with an 8-bit instruction that selects the type of information transfer or device operation to be performed. Commands may also have an address, instruction modifier, latency period, data transfer to the memory, or data transfer from the memory. All instruction, address, and data information is transferred sequentially between the host system and memory device. Command protocols are also classified by a numerical nomenclature using three numbers to reference the transfer width of three command phases: ■ instruction; ■ address and instruction modifier (continuous read mode bits); ■ data. Single bit wide commands start with an instruction and may provide an address or data, all sent only on the SI signal. Data may be sent back to the host serially on the SO signal. This is referenced as a 1-1-1 command protocol for single bit width instruction, single bit width address and modifier, single bit data. Dual-O or Quad-O commands provide an address sent from the host as serial on SI (IO0) then followed by dummy cycles. Data is returned to the host as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0, IO1, IO2, and IO3. This is referenced as 1-1-2 for Dual-O and 1-1-4 for Quad-O command protocols. Dual or Quad Input / Output (I/O) commands provide an address sent from the host as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0, IO1, IO2, and IO3 then followed by dummy cycles. Data is returned to the host similarly as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0, IO1, IO2, and IO3. This is referenced as 1-2-2 for Dual I/O and 1-4-4 for Quad I/O command protocols. The FL-L family also supports a QPI mode in which all information is transferred in 4-bit width, including the instruction, address, modifier, and data. This is referenced as a 4-4-4 command protocol. Commands are structured as follows: ■ Each command begins with CS# going low and ends with CS# returning high. The memory device is selected by the host driving the Chip Select (CS#) signal low throughout a command. ■ The serial clock (SCK) marks the transfer of each bit or group of bits between the host and memory. ■ Each command begins with an eight bit (byte) instruction. The instruction selects the type of information transfer or device operation to be performed. The instruction transfers occur on SCK rising edges. However, some read commands are modified by a prior read command, such that the instruction is implied from the earlier command. This is called Continuous Read Mode. When the device is in continuous read mode, the instruction bits are not transmitted at the beginning of the command because the instruction is the same as the read command that initiated the Continuous Read Mode. In Continuous Read mode the command will begin with the read address. Thus, Continuous Read Mode removes eight instruction bits from each read command in a series of same type read commands. ■ The instruction may be stand alone or may be followed by address bits to select a location within one of several address spaces in the device. The instruction determines the address space used. The address may be either a 24-bit or a 32-bit, byte boundary, address. The address transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands. ■ In legacy SPI mode, the width of all transfers following the instruction are determined by the instruction sent. Following transfers may continue to be single bit serial on only the SI or Serial Output (SO) signals, they may be done in two bit groups per (dual) transfer on the IO0 and IO1 signals, or they may be done in 4-bit groups per (quad) transfer on the IO0-IO3 signals. Within the dual or quad groups the least significant bit is on IO0. More significant bits are placed in significance order on each higher numbered IO signal. Single bits or parallel bit groups are transferred in most to LSb order. ■ In QPI mode, the width of all transfers is a 4-bit wide (quad) transfer on the IO0-IO3 signals. ■ Dual and Quad I/O read instructions send an instruction modifier called Continuous Read mode bits, following the address, to indicate whether the next command will be of the same type with an implied, rather than an explicit, instruction. These mode bits initiate or end the continuous read mode. In continuous read mode, the next command thus does not provide an instruction byte, only a new address and mode bits. This reduces the time needed to send each command when the same command type is repeated in a sequence of commands. The mode bit transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands. Document Number: 002-00124 Rev. *H Page 14 of 160 S25FL256L/S25FL128L ■ The address or mode bits may be followed by write data to be stored in the memory device or by a read latency period before read data is returned to the host. ■ Write data bit transfers occur on SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands. ■ SCK continues to toggle during any read access latency period. The latency may be zero to several SCK cycles (also referred to as dummy cycles). At the end of the read latency cycles, the first read data bits are driven from the outputs on SCK falling edge at the end of the last read latency cycle. The first read data bits are considered transferred to the host on the following SCK rising edge. Each following transfer occurs on the next SCK rising edge, in SDR commands, or on every SCK edge, in DDR commands. ■ If the command returns read data to the host, the device continues sending data transfers until the host takes the CS# signal high. The CS# signal can be driven high after any transfer in the read data sequence. This will terminate the command. ■ At the end of a command that does not return data, the host drives the CS# input high. The CS# signal must go high after the eighth bit, of a stand alone instruction or, of the last write data byte that is transferred. That is, the CS# signal must be driven high when the number of bits after the CS# signal was driven low is an exact multiple of eight bits. If the CS# signal does not go high exactly at the eight bit boundary of the instruction or write data, the command is rejected and not executed. ■ All instruction, address, and mode bits are shifted into the device with the MSb first. The data bits are shifted in and out of the device MSb first. All data is transferred in byte units with the lowest address byte sent first. Following bytes of data are sent in lowest to highest byte address order i.e. the byte address increments. ■ All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations) are ignored. The embedded operation will continue to execute without any affect. A very limited set of commands are accepted during an embedded operation. These are discussed in the individual command descriptions. ■ Depending on the command, the time for execution varies. A command to read status information from an executing command is available to determine when the command completes execution and whether the command was successful. 5.2.1 Command Sequence Examples Figure 13. Stand Alone Instruction Command CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1-IO3 Phase Instruction Figure 14. Single Bit Wide Input Command CS# SCLK SO_IO1-IO3 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO Phase Instruction Input Data Figure 15. Single Bit Wide Output Command without Latency CS# SCLK SI 7 6 5 4 3 SO Phase 2 1 0 7 Instruction Document Number: 002-00124 Rev. *H 6 5 4 3 Data 1 2 1 0 7 6 5 4 3 2 1 0 Data 2 Page 15 of 160 S25FL256L/S25FL128L Figure 16. Single Bit Wide I/O Command with Latency CS# SCLK SI 7 6 5 4 3 2 1 0 31 1 0 SO 7 Phase Instruction Address 6 5 Dummy Cycles 4 3 2 1 0 Data 1 Figure 17. Dual Output Read Command CS# SCK IO0 7 6 5 4 3 2 1 0 31 1 0 IO1 Phase Instruction Address 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 Dummy Cycles Data 1 Data 2 Figure 18. Quad Output Read Command CS# SCK IO0 4 0 4 0 4 0 4 0 4 0 4 IO1 7 6 5 4 5 1 5 1 5 1 5 1 5 1 5 IO2 6 2 6 2 6 2 6 2 6 2 6 IO3 7 3 7 3 7 3 7 3 7 3 7 Phase 3 2 1 0 31 Instruction 1 0 Address Dummy D1 D2 D3 D4 D5 Figure 19. Dual I/O Command CS# SCK IO0 7 6 5 4 3 2 1 IO1 Phase 0 30 2 0 6 4 2 0 6 4 2 0 6 4 2 0 31 3 1 7 5 3 1 7 5 3 1 7 5 3 1 Instruction Address Mode Dum Data 1 Data 2 Figure 20. Quad I/O Command CS# SCLK IO0 0 28 4 0 4 0 4 0 4 0 4 0 4 0 IO1 29 5 1 5 1 5 1 5 1 5 1 5 1 IO2 30 6 2 6 2 6 2 6 2 6 2 6 2 IO3 31 7 3 7 3 7 3 7 3 7 3 7 3 Phase 7 6 5 4 3 Instruction 2 1 Address Mode Dummy D1 D2 D3 D4 Note 8. The gray bits are optional, the host does not have to drive bits during that cycle. Document Number: 002-00124 Rev. *H Page 16 of 160 S25FL256L/S25FL128L Figure 21. Quad I/O Read Command in QPI Mode CS# SCLK IO0 4 0 28 4 0 4 0 4 0 4 0 4 0 4 0 IO1 5 1 29 5 1 5 1 5 1 5 1 5 1 5 1 IO2 6 2 30 6 2 6 2 6 2 6 2 6 2 6 2 IO3 7 3 31 7 3 7 3 7 3 7 3 7 3 7 3 Phase Instruct. Address Mode Dummy D1 D2 D3 D4 Note 9. The gray bits are optional, the host does not have to drive bits during that cycle. Figure 22. DDR Quad I/O Read Command CS# SCK IO0 7 6 5 A-3 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0 IO1 A-2 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1 IO2 A-1 2 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2 IO3 A 3 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3 Phase 4 3 2 1 0 Instruction Address Mode Dummy DLP D1 D2 Figure 23. DDR Quad I/O Read Command QPI Mode CS# SCLK IO0 4 0 A-3 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0 IO1 5 1 A-2 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1 IO2 6 2 A-1 2 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2 IO3 7 3 A 3 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3 Phase Instruct. Address Mode Dummy DLP D1 D2 Additional sequence diagrams, specific to each command, are provided in Section 8. Commands on page 58. Document Number: 002-00124 Rev. *H Page 17 of 160 S25FL256L/S25FL128L 5.3 Interface States This section describes the input and output signal levels as related to the SPI interface behavior. Table 3. Interface States Summary Interface State VCC SCK CS# RESET# IO3 / RESET# WP# / IO2 SO / IO1 SI / IO0 Power-Off 50 MHz), an LC that provides 1 or more dummy cycles should be selected to allow additional time for the host to stop driving before the memory starts driving data, to minimize I/O driver conflict. When using DDR I/O commands with the DLP enabled, an LC that provides 5 or more dummy cycles should be selected to allow 1 cycle of additional time for the host to stop driving before the memory starts driving the 4 cycle DLP. Each read command ends when CS# is returned High at any point during data return. CS# must not be returned High during the mode or dummy cycles before data returns as this may cause mode bits to be captured incorrectly; making it indeterminate as to whether the device remains in continuous read mode. Document Number: 002-00124 Rev. *H Page 82 of 160 S25FL256L/S25FL128L 8.4.1 Read (Read 03h or 4READ 13h) The instruction  03h (CR2V[0]=0) is followed by a 3-byte address (A23-A0) or  03h (CR2V[0]=1) is followed by a 4-byte address (A31-A0) or  13h is followed by a 4-byte address (A31-A0) Then the memory contents, at the address given, are shifted out on SO/IO1. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. Figure 65. Read Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 7 Phase Instruction Address 6 5 4 3 2 1 0 7 6 5 Data 1 4 3 2 1 0 Data N Note 31. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1 or command 13h. 8.4.2 Fast Read (FAST_READ 0Bh or 4FAST_READ 0Ch) The instruction  0Bh (CR2V[0]=0) is followed by a 3-byte address (A23-A0) or  0Bh (CR2V[0]=1) is followed by a 4-byte address (A31-A0) or  0Ch is followed by a 4-byte address (A31-A0) The address is followed by dummy cycles depending on the latency code set in the Configuration Register CR3V[3:0]. The dummy cycles allow the device internal circuits additional time for accessing the initial address location. During the dummy cycles the data value on SO/IO1 is “don’t care” and may be high impedance. Then the memory contents, at the address given, are shifted out on SO/IO1. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. Figure 66. Fast Read (FAST_READ) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction Address Dummy Cycles Data 1 Note 32. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1 or command 0Ch. Document Number: 002-00124 Rev. *H Page 83 of 160 S25FL256L/S25FL128L 8.4.3 Dual Output Read (DOR 3Bh or 4DOR 3Ch) The instruction  3Bh (CR2V[0]=0) is followed by a 3-byte address (A23-A0) or  3Bh (CR2V[0]=1) is followed by a 4-byte address (A31-A0) or  3Ch is followed by a 4-byte address (A31-A0) The address is followed by dummy cycles depending on the latency code set in the Configuration Register CR3V[3:0]. The dummy cycles allow the device internal circuits additional time for accessing the initial address location. During the dummy cycles the data value on IO0 (SI) and IO1 (S0) is “don’t care” and may be high impedance. Then the memory contents, at the address given, is shifted out two bits at a time through IO0 (SI) and IO1 (SO). Two bits are shifted out at the SCK frequency by the falling edge of the SCK signal. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. For Dual Output Read commands, there are dummy cycles required after the last address bit is shifted into IO0 (SI) before data begins shifting out of IO0 and IO1. Figure 67. Dual Output Read Command Sequence CS# SCK IO0 7 6 5 4 3 2 1 0 A 1 0 IO1 Phase Instruction Address Dummy Cycles 6 4 2 0 6 4 2 0 7 5 3 1 7 5 3 1 Data 1 Data 2 Note 33. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1 or command 3Ch. 8.4.4 Quad Output Read (QOR 6Bh or 4QOR 6Ch) The instruction  6Bh (CR2V[0]=0) is followed by a 3-byte address (A23-A0) or  6Bh (CR2V[0]=1) is followed by a 4-byte address (A31-A0) or  6Ch is followed by a 4-byte address (A31-A0) The address is followed by dummy cycles depending on the latency code set in the Configuration Register CR3V[3:0]. The dummy cycles allow the device internal circuits additional time for accessing the initial address location. During the dummy cycles the data value on IO0 - IO3 is “don’t care” and may be high impedance. Then the memory contents, at the address given, is shifted out four bits at a time through IO0 - IO3. Each nibble (4 bits) is shifted out at the SCK frequency by the falling edge of the SCK signal. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. For Quad Output Read commands, there are dummy cycles required after the last address bit is shifted into IO0 before data begins shifting out of IO0 - IO3. Document Number: 002-00124 Rev. *H Page 84 of 160 S25FL256L/S25FL128L Figure 68. Quad Output Read Command Sequence CS# SCK IO0 4 0 4 0 4 0 4 0 4 0 4 IO1 5 1 5 1 5 1 5 1 5 1 5 IO2 6 2 6 2 6 2 6 2 6 2 6 IO3 7 3 7 3 7 3 7 3 7 3 7 D1 D2 D3 D4 D5 Phase 7 6 5 4 3 2 1 Instruction 0 A 1 0 Address Dummy Note 34. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1 or command 6Ch. 8.4.5 Dual I/O Read (DIOR BBh or 4DIOR BCh) The instruction  BBh (CR2V[0]=0) is followed by a 3-byte address (A23-A0) or  BBh (CR2V[0]=1) is followed by a 4-byte address (A31-A0) or  BCh is followed by a 4-byte address (A31-A0) The Dual I/O Read commands improve throughput with two I/O signals — IO0 (SI) and IO1 (SO). This command takes input of the address and returns read data two bits per SCK rising edge. In some applications, the reduced address input and data output time might allow for code execution in place (XIP) i.e. directly from the memory device. The Dual I/O Read command has continuous read mode bits that follow the address so, a series of Dual I/O Read commands may eliminate the 8 bit instruction after the first Dual I/O Read command sends a mode bit pattern of Axh that indicates the following command will also be a Dual I/O Read command. The first Dual I/O Read command in a series starts with the 8 bit instruction, followed by address, followed by four cycles of mode bits, followed by an optional latency period. If the mode bit pattern is Axh the next command is assumed to be an additional Dual I/O Read command that does not provide instruction bits. That command starts with address, followed by mode bits, followed by optional latency. Variable latency may be added after the mode bits are shifted into SI and SO before data begins shifting out of IO0 and IO1. This latency period (dummy cycles) allows the device internal circuitry enough time to access data at the initial address. During the dummy cycles, the data value on SI and SO are “don’t care” and may be high impedance. The number of dummy cycles is determined by the frequency of SCK. The latency is configured in CR3V[3:0]. The continuous read feature removes the need for the instruction bits in a sequence of read accesses and greatly improves code execution (XIP) performance. The upper nibble (bits 7-4) of the Mode bits control the length of the next Dual I/O Read command through the inclusion or exclusion of the first byte instruction code. The lower nibble (bits 3-0) of the Mode bits are “don’t care” (“x”) and may be high impedance. If the Mode bits equal Axh, then the device remains in Dual I/O Continuous Read Mode and the next address can be entered (after CS# is raised high and then asserted low) without the BBh or BCh instruction, as shown in Figure 70; thus, eliminating eight cycles of the command sequence. The following sequences will release the device from Dual I/O Continuous Read mode; after which, the device can accept standard SPI commands: 1. During the Dual I/O continuous read command sequence, if the Mode bits are any value other than Axh, then the next time CS# is raised high the device will be released from Dual I/O conti nous read mode. 2. Send the Mode Reset command. Note that the four mode bit cycles are part of the device’s internal circuitry latency time to access the initial address after the last address cycle that is clocked into IO0 (SI) and IO1 (SO). It is important that the I/O signals be set to high-impedance at or before the falling edge of the first data out clock. At higher clock speeds the time available to turn off the host outputs before the memory device begins to drive (bus turn around) is diminished. It is allowed and may be helpful in preventing I/O signal contention, for the host system to turn off the I/O signal outputs (make them high impedance) during the last two “don’t care” mode cycles or during any dummy cycles. Document Number: 002-00124 Rev. *H Page 85 of 160 S25FL256L/S25FL128L Following the latency period the memory content, at the address given, is shifted out two bits at a time through IO0 (SI) and IO1 (SO). Two bits are shifted out at the SCK frequency at the falling edge of SCK signal. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. CS# should not be driven high during mode or dummy bits as this may make the mode bits indeterminate. Figure 69. Dual I/O Read Command Sequence CS# SCK IO0 7 6 5 4 3 2 1 IO1 0 A-1 A Phase Instruction 2 0 6 4 2 0 6 4 2 0 6 4 2 0 3 1 7 5 3 1 7 5 3 1 7 5 3 1 Address Mode Dum Data 1 Data 2 Notes 35. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1 or command BCh. 36. Least significant 4 bits of Mode are don’t care and it is optional for the host to drive these bits. The host may turn off drive during these cycles to increase bus turn around time between Mode bits from host and returning data from the memory. Figure 70. Dual I/O Continuous Read Command Sequence CS# SCK IO0 6 4 2 0 A-1 2 0 6 4 2 0 6 4 2 0 6 4 2 0 IO1 7 5 3 1 A 3 1 7 5 3 1 7 5 3 1 7 5 3 1 Phase Data N Address Mode Dum Data 1 Data 2 Note 37. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1 or command BCh. 8.4.6 Quad I/O Read (QIOR EBh or 4QIOR ECh) The instruction,  EBh (CR2V[0]=0) is followed by a 3-byte address (A23-A0) or  EBh (CR2V[0]=1) is followed by a 4-byte address (A31-A0) or  ECh is followed by a 4-byte address (A31-A0) The Quad I/O Read command improves throughput with four I/O signals IO0-IO3. It allows input of the address bits four bits per serial SCK clock. In some applications, the reduced instruction overhead might allow for code execution (XIP) directly from FL-L family devices. The QUAD bit of the Configuration Register 1 must be set (CR1V[1]=1) or the QPI bit of Configuration Register 2 must be set (CR2V[1]=1 to enable the Quad capability of FL-L family devices. For the Quad I/O Read command, there is a latency required after the mode bits (described below) before data begins shifting out of IO0-IO3. This latency period (i.e., dummy cycles) allows the device’s internal circuitry enough time to access data at the initial address. During latency cycles, the data value on IO0-IO3 are “don’t care” and may be high impedance. The number of dummy cycles is determined by the frequency of SCK. The latency is configured in CR3V[3:0]. Following the latency period, the memory contents at the address given, is shifted out four bits at a time through IO0-IO3. Each nibble (4 bits) is shifted out at the SCK frequency by the falling edge of the SCK signal. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. Document Number: 002-00124 Rev. *H Page 86 of 160 S25FL256L/S25FL128L Address jumps can be done without the need for additional Quad I/O Read instructions. This is controlled through the setting of the Mode bits (after the address sequence, as shown in Figure 71 on page 87. This added feature removes the need for the instruction sequence and greatly improves code execution (XIP). The upper nibble (bits 7-4) of the Mode bits control the length of the next Quad I/O instruction through the inclusion or exclusion of the first byte instruction code. The lower nibble (bits 3-0) of the Mode bits are “don’t care” (“x”). If the Mode bits equal Axh, then the device remains in Quad I/O High Performance Read Mode and the next address can be entered (after CS# is raised high and then asserted low) without requiring the EBh or ECh instruction, as shown in Figure 73 on page 88; thus, eliminating eight cycles for the command sequence. The following sequences will release the device from Quad I/O High Performance Read mode; after which, the device can accept standard SPI commands: 1. During the Quad I/O Read Command Sequence, if the Mode bits are any value other than Axh, then the next time CS# is raised high the device will be released from Quad I/O High Performance Read mode. 2. Send the Mode Reset command. Note that the two mode bit clock cycles and additional wait states (i.e., dummy cycles) allow the device’s internal circuitry latency time to access the initial address after the last address cycle that is clocked into IO0-IO3. It is important that the IO0-IO3 signals be set to high-impedance at or before the falling edge of the first data out clock. At higher clock speeds the time available to turn off the host outputs before the memory device begins to drive (bus turn around) is diminished. It is allowed and may be helpful in preventing IO0-IO3 signal contention, for the host system to turn off the IO0-IO3 signal outputs (make them high impedance) during the last “don’t care” mode cycle or during any dummy cycles. CS# should not be driven high during mode or dummy bits as this may make the mode bits indeterminate. In QPI mode (CR2V[3]=1) the Quad I/O instructions are sent 4 bits per SCK rising edge. The remainder of the command protocol is identical to the Quad I/O commands. Figure 71. Quad I/O Read Initial Access Command Sequence CS# SCLK IO0 7 6 0 A-3 4 0 4 0 4 0 4 0 4 0 4 0 IO1 A-2 5 1 5 1 5 1 5 1 5 1 5 1 IO2 A-1 6 2 6 2 6 2 6 2 6 2 6 2 IO3 A 7 3 7 3 7 3 7 3 7 3 7 3 Phase 5 4 3 2 1 Instruction Address Mode Dummy D1 D2 D3 D4 Note 38. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1 or command ECh. Figure 72. Quad I/O Read Initial Access Command Sequence QPI Mode CS# SCLK IO0 4 0 A-3 4 0 4 0 4 0 4 0 4 0 4 0 IO1 5 1 A-2 5 1 5 1 5 1 5 1 5 1 5 1 IO2 6 2 A-1 6 2 6 2 6 2 6 2 6 2 6 2 IO3 7 3 A 7 3 7 3 7 3 7 3 7 3 7 3 Phase Instruct. Address Mode Dummy D1 D2 D3 D4 Note 39. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1 or command ECh. Document Number: 002-00124 Rev. *H Page 87 of 160 S25FL256L/S25FL128L Figure 73. Continuous Quad I/O Read Command Sequence CS# SCK IO0 4 0 4 0 A-3 4 0 4 0 4 0 4 0 6 4 2 0 IO1 5 1 5 1 A-2 5 1 5 1 5 1 5 1 7 5 3 1 IO2 6 2 6 2 A-1 6 2 6 2 6 2 6 1 7 5 3 1 IO3 7 3 7 3 A 7 3 7 3 3 7 1 7 5 3 Phase DN-1 DN Address Mode 7 Dummy D1 D2 D3 1 D4 Notes 40. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1 or command ECh. 41. The same sequence is used in QPI mode. 8.4.7 DDR Quad I/O Read (EDh, EEh) The DDR Quad I/O Read command improves throughput with four I/O signals IO0-IO3. It is similar to the Quad I/O Read command but allows input of the address four bits on every edge of the clock. In some applications, the reduced instruction overhead might allow for code execution (XIP) directly from FL-L Family devices. The QUAD bit of the Configuration Register 1 must be set (CR1V[1]=1) or the QPI bit of Configuration Register 2 must be set (CR2V[1]=1 to enable the Quad capability of FL-L family devices. The instruction  EDh (CR2V[0]=0) is followed by a 3-byte address (A23-A0) or  EDh (CR2V[0]=1) is followed by a 4-byte address (A31-A0) or  EEh is followed by a 4-byte address (A31-A0) The address is followed by mode bits. Then the memory contents, at the address given, is shifted out, in a DDR fashion, with four bits at a time on each clock edge through IO0-IO3. The maximum operating clock frequency for DDR Quad I/O Read command is 66 MHz. For DDR Quad I/O Read, there is a latency required after the last address and mode bits are shifted into the IO0-IO3 signals before data begins shifting out of IO0-IO3. This latency period (dummy cycles) allows the device’s internal circuitry enough time to access the initial address. During these latency cycles, the data value on IO0-IO3 are “don’t care” and may be high impedance. When the Data Learning Pattern (DLP) is enabled the host system must not drive the IO signals during the dummy cycles. The IO signals must be left high impedance by the host so that the memory device can drive the DLP during the dummy cycles. The number of dummy cycles is determined by the frequency of SCK. The latency is configured in CR3V[3:0]. Mode bits allow a series of Quad I/O DDR commands to eliminate the 8 bit instruction after the first command sends a complementary mode bit pattern. This feature removes the need for the eight bit SDR instruction sequence and dramatically reduces initial access times (improves XIP performance). The Mode bits control the length of the next DDR Quad I/O Read operation through the inclusion or exclusion of the first byte instruction code. If the upper nibble (IO[7:4]) and lower nibble (IO[3:0]) of the Mode bits are complementary (i.e. 5h and Ah) the device transitions to Continuous DDR Quad I/O Read Mode and the next address can be entered (after CS# is raised high and then asserted low) without requiring the EDh or EEh instruction, thus eliminating eight cycles from the command sequence. The following sequences will release the device from Continuous DDR Quad I/O Read mode; after which, the device can accept standard SPI commands: 1. During the DDR Quad I/O Read Command Sequence, if the Mode bits are not complementary the next time CS# is raised high and then asserted low the device will be released from DDR Quad I/O Read mode. 2. Send the Mode Reset command. The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back to 000000h, allowing the read sequence to be continued indefinitely. CS# should not be driven high during mode or dummy bits as this may make the mode bits indeterminate. Note that the memory devices may drive the IOs with a preamble prior to the first data value. The preamble is a Data Learning Pattern (DLP) that is used by the host controller to optimize data capture at higher frequencies. The preamble drives the IO bus for the four clock cycles immediately before data is output. The host must be sure to stop driving the IO bus prior to the time that the memory starts outputting the preamble. Document Number: 002-00124 Rev. *H Page 88 of 160 S25FL256L/S25FL128L The preamble is intended to give the host controller an indication about the round trip time from when the host drives a clock edge to when the corresponding data value returns from the memory device. The host controller will skew the data capture point during the preamble period to optimize timing margins and then use the same skew time to capture the data during the rest of the read operation. The optimized capture point will be determined during the preamble period of every read operation. This optimization strategy is intended to compensate for both the PVT (process, voltage, temperature) of both the memory device and the host controller as well as any system level delays caused by flight time on the PCB. Although the data learning pattern (DLP) is programmable, the following example shows example of the DLP of 34h. The DLP 34h (or 00110100) will be driven on each of the active outputs (i.e. all four IOs). This pattern was chosen to cover both “DC” and “AC” data transition scenarios. The two DC transition scenarios include data low for a long period of time (two half clocks) followed by a high going transition (001) and the complementary low going transition (110). The two AC transition scenarios include data low for a short period of time (one half clock) followed by a high going transition (101) and the complementary low going transition (010). The DC transitions will typically occur with a starting point closer to the supply rail than the AC transitions that may not have fully settled to their steady state (DC) levels. In many cases the DC transitions will bound the beginning of the data valid period and the AC transitions will bound the ending of the data valid period. These transitions will allow the host controller to identify the beginning and ending of the valid data eye. Once the data eye has been characterized the optimal data capture point can be chosen. In QPI mode (CR2V[3]=1) the DDR Quad I/O instructions are sent 4 bits at SCK rising edge. The remainder of the command protocol is identical to the DDR Quad I/O commands. Figure 74. DDR Quad I/O Read Initial Access CS# SCK IO0 7 6 5 4 A-3 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0 IO1 A-2 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1 IO2 A-1 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2 IO3 A 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3 Phase 3 2 1 0 Instruction Address Mode Dummy DLP D1 D2 Notes 42. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1 or command EEh 43. Example DLP of 34h (or 00110100) Figure 75. DDR Quad I/O Read Initial Access QPI Mode CS# SCLK IO0 4 0 A-3 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0 IO1 5 1 A-2 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1 IO2 6 2 A-1 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2 IO3 7 3 A 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3 Phase Instruct. Address Mode Dummy DLP D1 D2 Notes 44. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1 or command EEh. 45. Example DLP of 34h (or 00110100). Document Number: 002-00124 Rev. *H Page 89 of 160 S25FL256L/S25FL128L Figure 76. Continuous DDR Quad I/O Read Subsequent Access CS# SCK IO0 A-3 8 4 0 4 0 7 6 5 4 3 2 1 0 4 0 4 0 IO1 A-2 9 5 1 5 1 7 6 5 4 3 2 1 0 5 1 5 1 IO2 A-1 10 6 2 6 2 7 6 5 4 3 2 1 0 6 2 6 2 IO3 A 11 7 3 7 3 7 6 5 4 3 2 1 0 7 3 7 3 Phase Address Mode Dummy DLP D1 D2 Notes 46. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1 or command EEh. 47. The same sequence is used in QPI mode. 48. Example DLP of 34h (or 00110100). 8.5 Program Flash Array Commands 8.5.1 Program Granularity 8.5.1.1 Page Programming Page Programming is done by loading a Page Buffer with data to be programmed and issuing a programming command to move data from the buffer to the memory array. This sets an upper limit on the amount of data that can be programmed with a single programming command. Page Programming allows up to a page size 256bytes to be programmed in one operation. The page is aligned on the page size address boundary. It is possible to program from one bit up to a page size in each Page programming operation. For the very best performance, programming should be done in full pages of 256bytes aligned on 256byte boundaries with each Page being programmed only once. 8.5.1.2 Single Byte Programming Single Byte Programming allows full backward compatibility to the legacy standard SPI Page Programming (PP) command by allowing a single byte to be programmed anywhere in the memory array. 8.5.2 Page Program (PP 02h or 4PP 12H) The Page Program (PP) command allows bytes to be programmed in the memory (changing bits from 1 to 0). Before the Page Program (PP) commands can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device. After the Write Enable (WREN) command has been decoded successfully, the device sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The instruction  02h (CR2V[0]=0) is followed by a 3-byte address (A23-A0) or  02h (CR2V[0]=1) is followed by a 4-byte address (A31-A0) or  12h is followed by a 4-byte address (A31-A0) and at least one data byte on SI/IO0. Up to a page can be provided on SI/IO0 after the 3-byte address with instruction 02h or 4-byte address with instruction 12h has been provided. As with the write and erase commands, the CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Page Program command will not be executed. After CS# is driven high, the self-timed Page Program command will commence for a time duration of tPP. Using the Page Program (PP) command to load an entire page, within the page boundary, will save overall programming time versus loading less than a page into the program buffer. The programming process is managed by the Flash memory device internal control logic. After a programming command is issued, the programming operation status can be checked using the Read Status Register 1 command. The WIP bit (SR1V[0]) will indicate when the programming operation is completed. The P_ERR bit (SR2V[5]) will indicate if an error occurs in the programming operation that prevents successful completion of programming. This includes attempted programming of a protected area. Document Number: 002-00124 Rev. *H Page 90 of 160 S25FL256L/S25FL128L Figure 77. Page Program (PP 02h or 4PP 12h) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction Address Input Data 1 Input Data 2 Note 49. A = MSb of address = A23 for PP 02h with CR2V[0]=0, or A31 for PP 02h with CR2V[0] = 1, or for 4PP 12h. This command is also supported in QPI mode. In QPI mode, the instruction, address and data is shifted in on IO0-IO3. Figure 78. Page Program (PP 02h or 4PP 12h) QPI Mode Command Sequence CS# SCLK IO0 4 0 A-3 4 0 4 0 4 0 4 0 4 0 IO1 5 1 A-2 5 1 5 1 5 1 5 1 5 1 IO2 6 2 A-1 6 2 6 2 6 2 6 2 6 2 IO3 7 3 A 7 3 7 3 7 3 7 3 7 3 Phase Instruct. Address Input D1 Input D2 Input D3 Input D4 Note 50. A = MSb of address = A23 for PP 02h with CR2V[0]=0, or A31 for PP 02h with CR2V[0] = 1, or for 4PP 12h. 8.5.3 Quad Page Program (QPP 32h or 4QPP 34h) The Quad-input Page Program (QPP) command allows bytes to be programmed in the memory (changing bits from 1 to 0). The Quad-input Page Program (QPP) command allows up to a page of data to be loaded into the Page Buffer using four signals: IO0IO3. QPP can improve performance for PROM Programmer and applications that have slower clock speeds (< 12 MHz) by loading 4 bits of data per clock cycle. Systems with faster clock speeds do not realize as much benefit for the QPP command since the inherent page program time becomes greater than the time it takes to clock-in the data. The maximum frequency for the QPP command is 133MHz. To use Quad Page Program the Quad Enable Bit in the Configuration Register must be set (QUAD=1). A Write Enable command must be executed before the device will accept the QPP command (Status Register 1, WEL=1). The instruction  32h (CR2V[0]=0) is followed by a 3-byte address (A23-A0) or  32h (CR2V[0]=1) is followed by a 4-byte address (A31-A0) or  34h is followed by a 4-byte address (A31-A0) and at least one data byte, into the IO signals. Data must be programmed at previously erased (FFh) memory locations. All other functions of QPP are identical to Page Program. The QPP command sequence is shown in the figure below. Document Number: 002-00124 Rev. *H Page 91 of 160 S25FL256L/S25FL128L Figure 79. Quad Page Program Command Sequence CS# SCK IO0 4 0 4 0 4 0 4 0 4 0 4 IO1 7 6 5 1 5 1 5 1 5 1 5 1 5 IO2 6 2 6 2 6 2 6 2 6 2 6 IO3 7 3 7 3 7 3 7 3 7 3 7 Phase 5 4 3 2 1 0 A Instruction 1 0 Address Data 1 Data 2 Data 3 Data 4 Data 5 ... Note 51. A = MSb of address = A23 for QPP 32h with CR2V[0]=0, or A31 for QPP 32h with CR2V[0]=1, or for 4QPP 34h. 8.6 Erase Flash Array Commands 8.6.1 Sector Erase (SE 20h or 4SE 21h) The Sector Erase (SE) command sets all bits in the addressed sector to 1 (all bytes are FFh). Before the Sector Erase (SE) command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The instruction  20h [CR2V[0]=0] is followed by a 3-byte address (A23-A0), or  20h [CR2V[0]=1] is followed by a 4-byte address (A31-A0), or  21h is followed by a 4-byte address (A31-A0) CS# must be driven into the logic high state after the twenty-fourth or thirty-second bit of the address has been latched in on SI/IO0. This will initiate the beginning of internal erase cycle, which involves the pre-programming and erase of the chosen sector of the flash memory array. If CS# is not driven high after the last bit of address, the sector erase operation will not be executed. As soon as CS# is driven high, the internal erase cycle will be initiated. With the internal erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to determine when the operation has been completed. The WIP bit will indicate a “1”. when the erase cycle is in progress and a “0” when the erase cycle has been completed. A SE or 4SE command applied to a sector that has been write protected through the Legacy Block Protection, Individual Block Lock or Pointer Region Protection will not be executed and will set the E_ERR status. Figure 80. Sector Erase (SE 20h or 4SE 21h) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 Phase Instruction Address Note 52. A = MSb of address = A23 for SE 20h with CR2V[0]=0, or A31 for SE 20h with CR2V[0]=1 or for 4SE 21h. This command is also supported in QPI mode. In QPI mode, the instruction and address is shifted in on IO0-IO3. Document Number: 002-00124 Rev. *H Page 92 of 160 S25FL256L/S25FL128L Figure 81. Sector Erase (SE 20h or 4SE 21h) QPI Mode Command Sequence CS# SCLK IO0 4 0 A-3 4 0 IO1 5 1 A-2 5 1 IO2 6 2 A-1 6 2 IO3 7 3 A 7 3 Phase Instructtion Address Note 53. A = MSb of address = A23 for SE 20h with CR2V[0]=0, or A31 for SE 20h with CR2V[0]=1 or for 4SE 21h. 8.6.2 Half Block Erase (HBE 52h or 4HBE 53h) The Half Block Erase (HBE) command sets all bits in the addressed half block to 1 (all bytes are FFh). Before the Half Block Erase (HBE) command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The instruction  52h [CR2V[0]=0] is followed by a 3-byte address (A23-A0), or  52h [CR2V[0]=1] is followed by a 4-byte address (A31-A0), or  53h is followed by a 4-byte address (A31-A0) CS# must be driven into the logic high state after the twenty-fourth or thirty-second bit of address has been latched in on SI/IO0. This will initiate the erase cycle, which involves the pre-programming and erase of each sector of the chose block. If CS# is not driven high after the last bit of address, the half block erase operation will not be executed. As soon as CS# is driven into the logic high state, the internal erase cycle will be initiated. With the internal erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to check if the operation has been completed. The WIP bit will indicate a “1” when the erase cycle is in progress and a “0” when the erase cycle has been completed. A Half Block Erase (HBE) command applied to a Block that has been Write Protected through the Legacy Block Protection, Individual Block Lock or Pointer Region Protection will not be executed and will set the E_ERR status. If a half block erase command is applied and if any region, sector or block in the half block erase area is protected the erase will not be executed on the 32 KB range and will set the E_ERR status. Figure 82. Half Block Erase (HBE 52h or 4HBE 53h) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 Phase Instruction Address Notes 54. A = MSb of address = A23 for HBE 52h with CR2V[0]=0, or A31 for HBE 52h with CR2V[0]=1 or 4HBE 53h. 55. When A[15]=0 the sectors 0-7 of Block are erased and A[15]=1 then sectors 8-15 of Block are erased. This command is also supported in QPI mode. In QPI mode, the instruction and address is shifted in on IO0-IO3. Document Number: 002-00124 Rev. *H Page 93 of 160 S25FL256L/S25FL128L Figure 83. Half Block Erase (HBE 52h or 4HBE 53h) QPI Mode Command Sequence CS# SCLK IO0 4 0 A-3 4 0 IO1 5 1 A-2 5 1 IO2 6 2 A-1 6 2 IO3 7 3 A 7 3 Phase Instructtion Address Notes 56. A = MSb of address = A23 for HBE 52h with CR2V[0]=0, or A31 for HBE 52h with CR2V[0]=1 or 4HBE 53h. 57. When A[15]=0 the sectors 0-7 of Block are erased and A[15]=1 then sectors 8-15 of Block are erased. 8.6.3 Block Erase (BE D8h or 4BE DCh) The Block Erase (BE) command sets all bits in the addressed block to 1 (all bytes are FFh). Before the Block Erase (BE) command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The instruction  D8h [CR2V[0]=0] is followed by a 3-byte address (A23-A0), or  D8h [CR2V[0]=1] is followed by a 4-byte address (A31-A0), or  DCh is followed by a 4-byte address (A31-A0) CS# must be driven into the logic high state after the twenty-fourth or thirty-second bit of address has been latched in on SI/IO0. This will initiate the erase cycle, which involves the pre-programming and erase of each sector of the chosen block. If CS# is not driven high after the last bit of address, the block erase operation will not be executed. As soon as CS# is driven into the logic high state, the internal erase cycle will be initiated. With the internal erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to check if the operation has been completed. The WIP bit will indicate a “1” when the erase cycle is in progress and a “0” when the erase cycle has been completed. A Block Erase (BE) command applied to a Block that has been Write Protected through the Legacy Block Protection, Individual Block Lock or Pointer Region Protection will not be executed and will set the E_ERR status. If a block erase command is applied and if any region or sector area is protected the erase will not be executed on the 64 KB range and will set the E_ERR status. Figure 84. Block Erase (BE D8h or 4BE DCh) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 Phase Instruction Address Note 58. A = MSb of address = A23 for BE D8h with CR2V[0]=0, or A31 for BE D8h with CR2V[0]=1 or 4BE DCh. This command is also supported in QPI mode. In QPI mode, the instruction and address is shifted in on IO0-IO3. Document Number: 002-00124 Rev. *H Page 94 of 160 S25FL256L/S25FL128L Figure 85. Block Erase (BE D8h or 4BE DCh) QPI Mode Command Sequence CS# SCLK IO0 4 0 A-3 4 0 IO1 5 1 A-2 5 1 IO2 6 2 A-1 6 2 IO3 7 3 A 7 3 Phase Instructtion Address Note 59. A = MSb of address = A23 for BE D8h with CR2V[0]=0, or A31 for BE D8h with CR2V[0]=1 or 4BE DCh. 8.6.4 Chip Erase (CE 60h or C7h) The Chip Erase (CE) command sets all bits to 1 (all bytes are FFh) inside the entire flash memory array. Before the CE command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI/IO0. This will initiate the erase cycle, which involves the pre-programming and erase of the entire flash memory array. If CS# is not driven high after the last bit of instruction, the CE operation will not be executed. As soon as CS# is driven into the logic high state, the erase cycle will be initiated. With the erase cycle in progress, the user can read the value of the Write-In Progress (WIP) bit to determine when the operation has been completed. The WIP bit will indicate a “1” when the erase cycle is in progress and a “0” when the erase cycle has been completed. A CE command will not be executed when the Legacy Block Protection, Individual Block Lock or Pointer Region Protection set to protect any sector or block and this will set the E_ERR status bit. Figure 86. Chip Erase Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction This command is also supported in QPI mode. In QPI mode, the instruction is shifted in on IO0-IO3. Figure 87. Chip Erase Command Sequence QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Document Number: 002-00124 Rev. *H Instruction Page 95 of 160 S25FL256L/S25FL128L 8.6.5 Program or Erase Suspend (PES 75h) The PES command allows the system to interrupt a programming or erase operation and then read from any other non-erasesuspended sector or non-program-suspended-page. Program or Erase Suspend is valid only during a programming or sector erase, half block erase or block erase operation. A Chip Erase operation cannot be suspended. The Write in Progress (WIP) bit in Status Register 1 (SR1V[0]) must be checked to know when the programming or erase operation has stopped. The Program Suspend Status bit in the Status Register 2 (SR2[0]) can be used to determine if a programming operation has been suspended or was completed at the time WIP changes to 0. The Erase Suspend Status bit in the Status Register 2 (SR2[1]) can be used to determine if an erase operation has been suspended or was completed at the time WIP changes to 0. The time required for the suspend operation to complete is tSL, see Table 65 on page 146. An Erase can be suspended to allow a program operation or a read operation. During an erase suspend, the IBL array may be read to examine sector protection and written to remove or restore protection on a sector to be programmed. The protection bits will not be rechecked when the operation is resumed so any changes made will not impact current in progress operation. A program operation may be suspended to allow a read operation. A new suspend operation is not allowed with-in an already suspended erase or program operation. The suspend command is ignored in this situation. Table 44. Commands Allowed During Program or Erase Suspend Instruction Name Instruction Code (Hex) Allowed During Erase Suspend Allowed During Program Suspend READ 03 X X All array reads allowed in suspend RDSR1 05 X X Needed to read WIP to determine end of suspend process RDAR 65 X X Alternate way to read WIP to determine end of suspend process RDSR2 07 X X Needed to read suspend status to determine whether the operation is suspended or complete. RDCR1 35 X X Needed to read Configuration Register 1 RDCR2 15 X X Needed to read Configuration Register 2 RDCR3 33 X X Needed to read Configuration Register 3 RUID 4B X X Needed to read Unique Id RDID 9F X X Needed to read Device Id Comment RDQID AF X X Needed to read Quad Device Id RSFDP 5A X X Needed to read SFDP SBL 77 X X Needed to set Burst Length WREN 06 X X Required for program command within erase suspend WRDI 04 X X Required for program command within erase suspend PP 4PP QPP 02 12 32 X Required for array program during erase suspend. Only allowed if there is no other program suspended program operation (SR2V[0]=0). A program command will be ignored while there is a suspended program. If a program command is sent for a location within an erase suspended sector the program operation will fail with the P_ERR bit set. X Required for array program during erase suspend. Only allowed if there is no other program suspended program operation (SR2V[0]=0). A program command will be ignored while there is a suspended program. If a program command is sent for a location within an erase suspended sector the program operation will fail with the P_ERR bit set. X Required for array program during erase suspend. Only allowed if there is no other program suspended program operation (SR2V[0]=0). A program command will be ignored while there is a suspended program. If a program command is sent for a location within an erase suspended sector the program operation will fail with the P_ERR bit set. Document Number: 002-00124 Rev. *H Page 96 of 160 S25FL256L/S25FL128L Table 44. Commands Allowed During Program or Erase Suspend (Continued) Instruction Name Instruction Code (Hex) Allowed During Erase Suspend Allowed During Program Suspend Comment Required for array program during erase suspend. Only allowed if there is no other program suspended program operation (SR2V[0]=0). A program command will be ignored while there is a suspended program. If a program command is sent for a location within an erase suspended sector the program operation will fail with the P_ERR bit set. 4QPP 34 X 4READ 13 X X All array reads allowed in suspend CLSR 30 X X Clear status may be used if a program operation fails during erase suspend. EPR 7A X X Required to resume from erase or program suspend. RSTEN 66 X X Reset allowed anytime RST 99 X X Reset allowed anytime FAST_READ 0B X X All array reads allowed in suspend 4FAST_READ 0C X X All array reads allowed in suspend DOR 3B X X All array reads allowed in suspend 4DOR 3C X X All array reads allowed in suspend DIOR BB X X All array reads allowed in suspend 4DIOR BC X X All array reads allowed in suspend IBLRD 3D X X It may be necessary to remove and restore Individual Block Lock during erase suspend to allow programming during erase suspend. 4IBLRD E0 X X It may be necessary to remove and restore Individual Block Lock during erase suspend to allow programming during erase suspend. IBL 36 X X It may be necessary to restore Individual Block Lock during erase suspend to allow programming during erase suspend. 4IBL E1 X X It may be necessary to restore Individual Block Lock during erase suspend to allow programming during erase suspend. IBUL 39 X X It may be necessary to remove Individual Block Lock during erase suspend to allow programming during erase suspend. 4IBUL E2 X X It may be necessary to remove Individual Block Lock during erase suspend to allow programming during erase suspend. QOR 6B X X Read Quad Output (3 or 4 Byte Address)[60] 4QOR 6C X X Read Quad Output (4 Byte Address)[60] QIOR EB X X All array reads allowed in suspend[60] 4QIOR EC X X All array reads allowed in suspend[60] DDRQIOR ED X X All array reads allowed in suspend[60] DDR4QIOR ED X X All array reads allowed in suspend[60] X May need to reset a read operation during suspend MBR FF X SECRP 42 X SECRR 48 X All Security Regions program allowed in erase suspend X All Security Regions reads allowed in suspend Note 60. For all Quad commands the Quad Enable CR1V[1] bit (SeeTable 13 on page 31) needs to be set to “1” before initial program or erase, since the WRR/WRAR commands are not allowed inside of the suspend state. Document Number: 002-00124 Rev. *H Page 97 of 160 S25FL256L/S25FL128L All command not included in Table 44 on page 96 are not allowed during Erase or Program Suspend. The WRR, WRAR, or SPRP commands are not allowed during Erase or Program Suspend, it is therefore not possible to alter the Legacy Block Protection bits or Pointer Region Protection during Erase Suspend. Reading at any address within an erase-suspended sector or program-suspended page produces undetermined data. After an erase-suspended program operation is complete, the device returns to the erase-suspend mode. The system can determine the status of the program operation by reading the WIP bit in the Status Register, just as in the standard program operation. Figure 88. Program or Erase Suspend Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction This command is also supported in QPI mode. In QPI mode, the instruction is shifted in on IO0-IO3. Figure 89. Program or Erase Suspend Command Sequence QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Instruction Figure 90. Program or Erase Suspend Command with Continuing Instruction Commands Sequence tSL CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO Phase 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 Suspend Instruction Phase Document Number: 002-00124 Rev. *H Read Status Instruction Status Instr. During Suspend Repeat Status Read Until Suspended Page 98 of 160 S25FL256L/S25FL128L 8.6.6 Erase or Program Resume (EPR 7Ah) After program or read operations are completed during a program or erase suspend the Erase or Program Resume command is sent to continue the suspended operation. After an Erase or Program Resume command is issued, the WIP bit in the Status Register 1 will be set to a 1 and the suspended operation will resume if one is suspended. If there is no suspended program or erase operation the resume command is ignored. Program or erase operations may be interrupted as often as necessary e.g. a program suspend command could immediately follow a program resume command but, but in order for a program or erase operation to progress to completion there must be some periods of time between resume and the next suspend command greater than or equal to tRNS. See Table 65 on page 146. The Program Suspend Status bit in the Status Register 2 (SR2[0]) can be used to determine if a programming operation has been suspended or was completed at the time WIP changes to 0. The Erase Suspend Status bit in the Status Register 2 (SR2[1]) can be used to determine if an erase operation has been suspended or was completed at the time WIP changes to 0. See Section 6.6.2 Status Register 2 Volatile (SR2V) on page 29. An Erase or Program Resume command must be written to resume a suspended operation. Figure 91. Erase or Program Resume command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction This command is also supported in QPI mode. In QPI mode, the instruction is shifted in on IO0-IO3. Figure 92. Erase or Program Resume command Sequence QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Document Number: 002-00124 Rev. *H Instruction Page 99 of 160 S25FL256L/S25FL128L 8.7 Security Regions Array Commands The Security Regions commands select which region to use by address A15 to A8 as shown below.  Security Region 0: A23-16 = 00h; A15-8 = 00h; A7-0 = byte address  Security Region 1: A23-16 = 00h; A15-8 = 01h; A7-0 = byte address  Security Region 2: A23-16 = 00h; A15-8 = 02h; A7-0 = byte address  Security Region 3: A23-16 = 00h; A15-8 = 03h; A7-0 = byte address 8.7.1 Security Region Erase (SECRE 44h) The Security Region Erase command erases data in the Security Region, which is in a different address space from the main array data. The Security Region is 1024 bytes so, the address bits for S25FL128L (A23 to A10) and S25FL256L (A24 to A10) must be zero for this command. Each region can be individually erased. Refer to Section 6.5 Security Regions Address Space on page 24 for details on the Security Region. Before the Security Region Erase command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The WIP bit in SR1V may be checked to determine when the operation is completed. The E_ERR bit in SR2V may be checked to determine if any error occurred during the operation. The Security Region Lock Bits (CR1NV[2-5]) in the Configuration Register 1 can be used to protect the Security Regions for erase. Once a lock bit is set to 1, the corresponding Security Region will be permanently locked, Attempting to erase a region that is locked will fail with the E_ERR bit in SR2V[6] set to “1”. When the Protection Register NVLOCK Bit = “0”, Security Regions 2 and 3 are protected from program or erase. Attempting to erase in a region that locked will fail with the E_ERR bits in SR2V[6] set to “1”. See Section 7.7.2.1 NVLOCK Bit (PR[0]) on page 56. The Password Protection Mode Lock Bit (IRP[2]) allows regions 2 and 3 to be protected from erase operations until the correct password is provided to enable erasing of these Security Regions. Attempting to erase in a region that is password locked will fail with the E_ERR bit in SR2V[6] set to “1”. Section 7.7.4 Security Region Read Password Protection on page 57. The protocol of the Security Region Erase command is the same as the Sector Erase command. See Section 8.6.1 Sector Erase (SE 20h or 4SE 21h) on page 92 for the command sequence. QPI Mode is supported. 8.7.2 Security Region Program (SECRP 42h) The Security Region Program command programs data in the Security Region, which is in a different address space from the main array data. The Security Region is 1024 bytes so, the address bits for S25FL128L (A23 to A10) and S25FL256L (A24 to A10) must be zero for this command. Refer to Section 6.5 Security Regions Address Space on page 24 for details on the Security Region. Before the Security Region Program command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The WIP bit in SR1V may be checked to determine when the operation is completed. The P_ERR bit in SR2V may be checked to determine if any error occurred during the operation. To program the Security Region array in bit granularity, the rest of the bits within a data byte can be set to “1”. Each region in the Security Region memory space can be programmed one or more times, provided that the region is not locked. However, for the best data integrity, it is recommended that one or more 16 byte length and aligned groups of bytes be programed together and programmed only once between erase operations within each region. The Security Region Lock Bits (CR1NV[2-5]) in the Configuration Register 1 can be used to protect the Security Regions for Programming. Once a lock bit is set to 1, the corresponding Security Region will be permanently locked. Attempting to program zeros or ones in a region that is locked (protected) will fail with the P_ERR bit in SR2V[5] set to “1”. Programming ones in a unprotected area does not cause an error and does not set P_ERR. (see Section 6.6.3 Configuration Register 1 on page 30 for detail descriptions). When the Protection Register NVLOCK Bit = “0”, Security Regions 2 and 3 are protected from program or erase. Attempting to program in a region that locked will fail with the P_ERR bit in SR2V[5] set to “1”. See Section 7.7.2.1 NVLOCK Bit (PR[0]) on page 56. Document Number: 002-00124 Rev. *H Page 100 of 160 S25FL256L/S25FL128L The Password Protection Mode Lock Bit (IRP[2]) allows regions 2 and 3 to be protected from programming operations until the correct password is provided to enable programming of these Security Regions 2 and 3. Attempting to program in a region that is password locked will fail with the P_ERR bit in SR2V[5] set to “1”. See Section 7.7.3 Password Protection Mode on page 56. The protocol of the Security Region Program command is the same as the Page Program command. See Section 8.5.1.1 Page Programming on page 90 for the command sequence. QPI Mode is supported. 8.7.3 Security Regions Read (SECRR 48h) The Security Region Read (SECRR) command provides a way to read data from the Security Regions. The Security Region is 1024 bytes so, the address bits for S25FL128L (A23 to A10) and S25FL256L (A24 to A10) must be zero for this command. Refer to Section 6.5 Security Regions Address Space on page 24 for details on the Security Regions. The instruction is followed by a 3 or 4 Byte address (depending on the address length configuration CR2V[0], followed by a number of latency (dummy) cycles set by CR3V[3:0]. Then the selected register data are returned. The protocol of the Security Region Read command will not wrap to the starting address after the Security Region address is at its maximum; instead, the data beyond the maximum address will be undefined. The Security Region Read command read latency is set by the latency value in CR3V[3:0]. The Security Region Read Password Mode Enable Bit (IRP[6]) allows regions 3 to be protected from read operations until the correct password is provided to enable reading of this Security Region. Attempting to read in region 3 that is password locked will return invalid and undefined data. See Section 7.7.4 Security Region Read Password Protection on page 57. Figure 93. Security Regions Read Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 7 Phase Instruction Address 6 5 4 Dummy Cycles 3 2 1 0 Data 1 Note 61. A = MSb of address = 23 for Address length CR2V[0] = 0, or 31 for CR2V[0]=1. This command is also supported in QPI mode. In QPI mode, the instruction and address is shifted in and returning data out on IO0IO3. Figure 94. Security Regions Read Command Sequence QPI Mode CS# SCLK IO0 4 0 A-3 4 0 4 0 4 0 4 0 4 0 IO1 5 1 A-2 5 1 5 1 5 1 5 1 5 1 IO2 6 2 A-1 6 2 6 2 6 2 6 2 6 2 IO3 7 3 A 7 3 7 3 7 3 7 3 7 3 Phase Instruct. Address Dummy D1 D2 D3 D4 Note 62. A = MSb of address = 23 for CR2V[0]=0, or 31 for CR2V[0]=1. Document Number: 002-00124 Rev. *H Page 101 of 160 S25FL256L/S25FL128L 8.8 Individual Block Lock Commands In order to use Individual Block Lock, the IBL protection scheme must be selected by the WPS bit in Configuration Register 2 CR2V[2]=1. If if IBL protection scheme is not selected CR2V[2]=0 the IBL commands are ignored. Individual Block Lock Bits (IBL) are volatile, with one for each sector / block, and can be individually modified. By issuing the IBL or GBL commands, a IBL bit is set to “0” protecting each related sector / block. By issuing the IBUL or GUL commands, a IBL bit is cleared to “1” unprotecting each related sector or block. By issuing the IBLRD command the state of each IBL bit protection can be read. 8.8.1 IBL Read (IBLRD 3Dh or 4IBLRD E0h) The IBLRD/4IBLRD command allows reading the state of each IBL bit protection. The instruction is latched into SI by the rising edge of the SCK signal. The instruction is followed by the 24- or 32-Bit address, depending on the address length configuration CR2V[0], selecting location zero within the desired sector. Then the 8-bit IBL access register contents are shifted out on the serial output SO/IO1. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible to read the same IBL access register continuously by providing multiples of eight clock cycles. The address of the IBL register does not increment so this is not a means to read the entire IBL array. Each location must be read with a separate IBL Read command. Figure 95. IBLRD Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 7 Phase Instruction Address 6 Dummy Cycles 5 4 3 2 1 0 Output IBL Notes 63. A = MSb of address = 23 for Address length (CR2V[0] = 0, or 31 for CR2V[0]=1 with command 3Dh. 64. A = MSb of address = 31 with command E0h. This command is also supported in QPI mode. In QPI mode, the instruction and address is shifted in and returning data out on IO0IO3. Figure 96. IBLRD Command Sequence QPI CS# SCLK IO0 4 0 A-3 4 0 4 0 4 0 IO1 5 1 A-2 5 1 5 1 5 1 IO2 6 2 A-1 6 2 6 2 6 2 IO3 7 3 A 7 3 7 3 7 3 Phase Instruct. Address Dummy IBL Repeat IBL Notes 65. A = MSb of address = 23 for Address length (CR2V[0] = 0, or 31 for CR2V[0]=1 with command 3Dh. 66. A = MSb of address = 31 with command E0h. Document Number: 002-00124 Rev. *H Page 102 of 160 S25FL256L/S25FL128L 8.8.2 IBL Lock (IBL 36h or 4IBL E1h) The IBL/4IBL commands sets the selected IBL bit to “0” protecting each related sector / block. The IBL command is entered by driving CS# to the logic low state, followed by the instruction, followed by the 24- or 32-Bit address, depending on the address length configuration CR2V[0]. The IBL command affects the WIP bits of the Status and Configuration Registers in the same manner as any other programming operation. CS# must be driven to the logic high state after the 24- or 32-Bit address (depending on the address length configuration CR2V[0]) has been latched in. As soon as CS# is driven to the logic high state, the self-timed IBL operation is initiated. While the IBL operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a “1” during the self-timed IBL operation, and is a “0” when it is completed. Figure 97. IBL Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 Phase Instruction Address Notes 67. A = MSb of address = 23 for Address length (CR2V[0] = 0, or 31 for CR2V[0]=1 with command 36h. 68. A = MSb of address = 31 with command E1h This command is also supported in QPI mode. In QPI mode, the instruction and address is shifted in on IO0-IO3. Figure 98. IBL Command Sequence QPI Mode CS# SCLK IO0 4 0 A-3 4 0 IO1 5 1 A-2 5 1 IO2 6 2 A-1 6 2 IO3 7 3 A 7 3 Phase Instructtion Address Notes 69. A = MSb of address = 23 for Address length (CR2V[0] = 0, or 31 for CR2V[0]=1 with command 36h. 70. A = MSb of address = 31 with command E1h. Document Number: 002-00124 Rev. *H Page 103 of 160 S25FL256L/S25FL128L 8.8.3 IBL Unlock (IBUL 39h or 4IBUL E2h) The IBUL/4IBULcommands clears the selected IBL bit to “1” unprotecting each related sector / block. The IBUL command is entered by driving CS# to the logic low state, followed by the instruction, followed by the 24- or 32-Bit address, depending on the address length configuration CR2V[0]. The IBUL command affects the WIP bits of the Status and Configuration Registers in the same manner as any other programming operation. CS# must be driven to the logic high state after the 24- or 32-Bit address (depending on the address length configuration CR2V[0]) has been latched in. As soon as CS# is driven to the logic high state, the self-timed IBL operation is initiated. While the IBUL operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a “1” during the self-timed IBUL operation, and is a “0” when it is completed. Figure 99. IBUL Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 Phase Instruction Address Notes 71. A = MSb of address = 23 for Address length (CR2V[0] = 0, or 31 for CR2V[0]=1 with command 39h. 72. A = MSb of address = 31 with command E2h. This command is also supported in QPI mode. In QPI mode, the instruction and address is shifted in on IO0-IO3. Figure 100. IBUL Command Sequence QPI Mode CS# SCLK IO0 4 0 A-3 4 0 IO1 5 1 A-2 5 1 IO2 6 2 A-1 6 2 IO3 7 3 A 7 3 Phase Instructtion Address Notes 73. A = MSb of address = 23 for Address length (CR2V[0] = 0, or 31 for CR2V[0]=1 with command 39h. 74. A = MSb of address = 31 with command E2h. Document Number: 002-00124 Rev. *H Page 104 of 160 S25FL256L/S25FL128L 8.8.4 Global IBL Lock (GBL 7Eh) The GBL commands sets all the IBL bits to “0” protecting all sectors / blocks. CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI. This will initiate the GBL. If CS# is not driven high after the last bit of instruction, the GBL operation will not be executed. As soon as CS# is driven into the logic high state, the GBL will be initiated. With the GBL in progress, the user can read the value of the Write-In Progress (WIP) bit to determine when the operation has been completed. The WIP bit will indicate a “1” when the GBL is in progress and a “0” when the GBL has been completed. Figure 101. Global IBL Lock (GBL) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction This command is also supported in QPI mode. In QPI mode, the instruction is shifted in on IO0-IO3. Figure 102. Global IBL Lock (GBL) Command Sequence QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Document Number: 002-00124 Rev. *H Instruction Page 105 of 160 S25FL256L/S25FL128L 8.8.5 Global IBL Unlock (GBUL 98h) The GBUL commands clears all the IBL bits to “1” unprotecting all sectors / blocks. CS# must be driven into the logic high state after the eighth bit of the instruction byte has been latched in on SI. This will initiate the GBUL If CS# is not driven high after the last bit of instruction, the GBUL operation will not be executed. As soon as CS# is driven into the logic high state, the GBL will be initiated. With the GBL in progress, the user can read the value of the Write-In Progress (WIP) bit to determine when the operation has been completed. The WIP bit will indicate a “1” when the GBUL is in progress and a “0” when the GBUL has been completed. Figure 103. Global IBL Unlock (GBUL) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction This command is also supported in QPI mode. In QPI mode, the instruction is shifted in on IO0-IO3. Figure 104. Global IBL Unlock (GBUL) Command Sequence QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Document Number: 002-00124 Rev. *H Instruction Page 106 of 160 S25FL256L/S25FL128L 8.9 Pointer Region Command 8.9.1 Set Pointer Region Protection (SPRP FBh or 4SPRP E3h) The SPRP or 4SPRP command is ignored during a suspend operation because the pointer value cannot be erased and reprogrammed during a suspend. The SPRP or 4SPRP command is ignored if default Power Supply Lock-down protection NVLOCK PR[0] = 0 or Power Supply Lockdown protection enabled IRP[1] = 0 or Password Protection enabled IRP[2] = 0 and NVLOCK PR[0] = 0. The S25FL256L device must have 4 Byte addressing enabled (CR2V[0] = 1) to set the Pointer Region Protection register PRPR (see Section 6.6.10 Pointer Region Protection Register (PRPR) on page 41) this ensures that A24 and A25 are set correctly. The S25FL128L device can have 4 Byte addressing enabled (CR2V[0] = 1) or 3 Byte addressing enabled (CR2V[0] = 0). Before the SPRP or 4SPRP command can be accepted by the device, a Write Enable (WREN) command must be issued. After the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to enable any write operations. The SPRP or 4SPRP command is entered by driving CS# to the logic low state, followed by the instruction, followed by the 24- or 32-Bit address, depending on the address length configuration CR2V[0], see Section 7.6.3 Pointer Region Protection (PRP) on page 52 for details on address values to select protection options. CS# must be driven to the logic high state after the last bit of address has been latched in. If not, the SPRP command is not executed. As soon as CS# is driven to the logic high state, the self-timed SPRP operation is initiated. While the SPRP operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a “1” during the self-timed SPRP operation, and is a “0” when it is completed. When the SPRP operation is completed, the Write Enable Latch (WEL) is set to a “0”. The SPRP or 4SPRP command will set the P_ERR or E_ERR bits if there is a failure in the Set Pointer Region Protection operation. For details on the address pointer defining a sector boundary between protected and unprotected regions in the memory, see Section 7.6.3 Pointer Region Protection (PRP) on page 52. Figure 105. SPRP Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 A 1 0 SO_IO1 Phase Instruction Address Notes 75. A = MSb of address = 23 for Address length (CR2V[0] = 0, or 31 for CR2V[0]=1 with command FDh. 76. A = MSb of address = 31 with command E3h. This command is also supported in QPI mode. In QPI mode, the instruction and address is shifted in on IO0-IO3. Figure 106. SPRP Command Sequence QPI Mode CS# SCLK IO0 4 0 A-3 4 0 IO1 5 1 A-2 5 1 IO2 6 2 A-1 6 2 IO3 7 3 A 7 3 Phase Instructtion Address Notes 77. A = MSb of address = 23 for Address length (CR2V[0] = 0, or 31 for CR2V[0]=1 with command FDh. 78. A = MSb of address = 31 with command E3h. Document Number: 002-00124 Rev. *H Page 107 of 160 S25FL256L/S25FL128L 8.10 Individual and Region Protection (IRP) Commands 8.10.1 IRP Register Read (IRPRD 2Bh) The IRP Register Read instruction 2Bh is shifted into SI/IO0 by the rising edge of the SCK signal followed by one dummy cycle. This latency period allows the device’s internal circuitry enough time to access data at the initial address. During latency cycles, the data value on IO0-IO3 are “don’t care” and may be high impedance. Then the 16-bit IRP register contents are shifted out on the serial output S0/IO1, LSB first. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible to read the IRP register continuously by providing multiples of 16 clock cycles. Figure 107. IRPRD Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 Phase 7 Instruction DY 6 5 4 3 2 1 0 7 Output IRP Low Byte 6 5 4 3 2 1 0 Output IRP High Byte This command is also supported in QPI mode. In QPI mode, the instruction is shifted in and returning data out on IO0-IO3. Figure 108. IRPRD Command Sequence – QPI Mode CS# SCLK IO0 4 0 4 0 4 0 IO1 5 1 5 1 5 1 IO2 6 2 6 2 6 2 IO3 7 3 7 3 7 3 Phase Document Number: 002-00124 Rev. *H Instruct. Dummy IRP Low Byte IRP High Byte Page 108 of 160 S25FL256L/S25FL128L 8.10.2 IRP Program (IRPP 2Fh) Before the IRP Program (IRPP) command can be accepted by the device, a Write Enable (WREN) command must be issued. After the Write Enable (WREN) command has been decoded, the device will set the Write Enable Latch (WEL) in the Status Register to enable any write operations. The IRPP command is entered by driving CS# to the logic low state, followed by the instruction and two data bytes on SI, LSB first. The IRP Register is two data bytes in length. The IRPP command affects the P_ERR and WIP bits of the Status and Configuration Registers in the same manner as any other programming operation. CS# input must be driven to the logic high state after the sixteenth bit of data has been latched in. If not, the IRPP command is not executed. As soon as CS# is driven to the logic high state, the self-timed IRPP operation is initiated. While the IRPP operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a “1” during the self-timed IRPP operation, and is a “0” when it is completed. When the IRPP operation is completed, the Write Enable Latch (WEL) is set to a “0”. Figure 109. IRP Program (IRPP) Command CS# SCK SI_IO0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction Input IRP Low Byte Input IRP High Byte This command is also supported in QPI mode. In QPI mode, the instruction and data is shifted in on IO0-IO3. Figure 110. IRP Program (IRPP) Command QPI CS# SCLK IO0 4 0 4 0 C 8 IO1 5 1 5 1 D 9 IO2 6 2 6 2 E A IO3 7 3 7 3 F B Phase Document Number: 002-00124 Rev. *H Instruct. IRP Low Byte IRP High Byte Page 109 of 160 S25FL256L/S25FL128L 8.10.3 Protection Register Read (PRRD A7h) The Protection Register Read (PRRD) command allows the Protection Register contents to be read out of SO/IO1. The Read instruction A7h is shifted into SI by the rising edge of the SCK signal followed by one dummy cycle. This latency period allows the device’s internal circuitry enough time to access data at the initial address. During latency cycles, the data value on IO0-IO3 are “don’t care” and may be high impedance. Then the 8-bit Protection Register contents are shifted out on the serial output SO/IO1. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible to read the Protection register continuously by providing multiples of eight clock cycles. The Protection Register contents may only be read when the device is in standby state with no other operation in progress. Figure 111. Protection Register Read (PRRD) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 Phase 7 Instruction DY 6 5 4 3 2 1 0 7 Register Read 6 5 4 3 2 1 0 Repeat Register Read This command is also supported in QPI mode. In QPI mode, the instruction is shifted in and returning data out on IO0-IO3. Figure 112. Protection Register Read (PRRD) Command Sequence – QPI Mode CS# SCLK IO0 4 0 4 0 4 0 IO1 5 1 5 1 5 1 IO2 6 2 6 2 6 2 IO3 7 3 7 3 7 3 Phase Document Number: 002-00124 Rev. *H Instruct. Dummy Register Read Register Read Page 110 of 160 S25FL256L/S25FL128L 8.10.4 Protection Register Lock (PRL A6h) The Protection Register Lock (PRL) command clears the NVLOCK bit (PR[0]) to zero and loads the IRP[6] value in to SECRRP (PR[6]). See Section 6.6.8 Protection Register (PR) on page 40. Before the PRL command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device, which sets the Write Enable Latch (WEL) in the Status Register to enable any write operations. The PRL command is entered by driving CS# to the logic low state, followed by the instruction. CS# must be driven to the logic high state after the eighth bit of instruction has been latched in. If not, the PRL command is not executed. As soon as CS# is driven to the logic high state, the self-timed PRL operation is initiated. While the PRL operation is in progress, the Status Register may still be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a “1” during the self-timed PRL operation, and is a “0” when it is completed. When the PRL operation is completed, the Write Enable Latch (WEL) is set to a “0”. Figure 113. Protection Register Lock (PRL) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction This command is also supported in QPI mode. In QPI mode, the instruction is shifted in on IO0-IO3. Figure 114. Protection Register Lock (PRL) Command Sequence – QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Document Number: 002-00124 Rev. *H Instruction Page 111 of 160 S25FL256L/S25FL128L 8.10.5 Password Read (PASSRD E7h) The correct password value may be read only after it is programmed and before the Password Mode has been selected by programming the Password Protection Mode bit to 0 in the IRP Register (IRP[2]). After the Password Protection Mode is selected the password is no longer readable, the PASSRD command will output undefined data. The PASSRD command is shifted into SI followed by one dummy cycle. This latency period allows the device’s internal circuitry enough time to access data at the initial address. During latency cycles, the data value on are “don’t care” and may be high impedance. Then the 64-bit Password is shifted out on the serial output, LSB first, MSb of each byte first. Each bit is shifted out at the SCK frequency by the falling edge of the SCK signal. It is possible to read the Password continuously by providing multiples of 64 clock cycles. Figure 115. Password Read (PASSRD) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 IO2-IO3 Phase Instruction DY Data 1 Data 8 This command is also supported in QPI mode. In QPI mode, the instruction is shifted in and returning data out on IO0-IO3. Figure 116. Password Read (PASSRD) Command Sequence – QPI Mode CS# SCLK IO0 4 0 4 0 4 0 4 0 IO1 5 1 5 1 5 1 5 1 IO2 6 2 6 2 6 2 6 2 IO3 7 3 7 3 7 3 7 3 Phase Instruct. Document Number: 002-00124 Rev. *H Dummy Data 1 Data 8 Page 112 of 160 S25FL256L/S25FL128L 8.10.6 Password Program (PASSP E8h) Before the Password Program (PASSP) command can be accepted by the device, a Write Enable (WREN) command must be issued and decoded by the device. After the Write Enable (WREN) command has been decoded, the device sets the Write Enable Latch (WEL) to enable the PASSP operation. The password can only be programmed before the Password Mode is selected by programming the Password Protection Mode bit to 0 in the IRP Register (IRP[2]). After the Password Protection Mode is selected the PASSP command is ignored. The PASSP command is entered by driving CS# to the logic low state, followed by the instruction and the password data bytes on SI/IO0, LSB first, MSb of each byte first. The password is sixty-four (64) bits in length. CS# must be driven to the logic high state after the sixty-fourth (64th) bit of data has been latched. If not, the PASSP command is not executed. As soon as CS# is driven to the logic high state, the self-timed PASSP operation is initiated. While the PASSP operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a “1” during the self-timed PASSP cycle, and is a “0” when it is completed. The PASSP command can report a program error in the P_ERR bit of the status register. When the PASSP operation is completed, the Write Enable Latch (WEL) is set to a “0”. Figure 117. Password Program (PASSP) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction Password Byte 1 Password Byte 8 This command is also supported in QPI mode. In QPI mode, the instruction and data is shifted in on IO0-IO3. Figure 118. Password Program (PASSP) Command Sequence QPI Mode CS# SCLK IO0 4 0 4 0 4 0 4 0 IO1 5 1 5 1 5 1 5 1 IO2 6 2 6 2 6 2 6 2 IO3 7 3 7 3 7 3 7 3 Phase Instruct. Document Number: 002-00124 Rev. *H Password Byte 1 Password Byte 8 Page 113 of 160 S25FL256L/S25FL128L 8.10.7 Password Unlock (PASSU EAh) The PASSU command is entered by driving CS# to the logic low state, followed by the instruction and the password data bytes on SI, LSB first, MSb of each byte first. The password is sixty-four (64) bits in length. CS# must be driven to the logic high state after the sixty-fourth (64th) bit of data has been latched. If not, the PASSU command is not executed. As soon as CS# is driven to the logic high state, the self-timed PASSU operation is initiated. While the PASSU operation is in progress, the Status Register may be read to check the value of the Write-In Progress (WIP) bit. The Write-In Progress (WIP) bit is a “1” during the self-timed PASSU cycle, and is a “0” when it is completed. If the PASSU command supplied password does not match the hidden password in the Password Register, an error is reported by setting the P_ERR bit to 1. The WIP bit of the status register also remains set to 1. It is necessary to use the CLSR command to clear the status register, the software reset command (RSTEN 66h followed by RST 99h) to reset the device, or drive the RESET# and IO3 / RESET# input to initiate a hardware reset, in order to return the P_ERR and WIP bits to 0. This returns the device to standby state, ready for new commands such as a retry of the PASSU command. If the password does match, the NVLOCK bit is set to “1”. Figure 119. Password Unlock (PASSU) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction Password Byte 1 Password Byte 8 This command is also supported in QPI mode. In QPI mode, the instruction and data is shifted in on IO0-IO3. Figure 120. Password Unlock (PASSU) Command Sequence QPI Mode CS# SCLK IO0 4 0 4 0 4 0 4 0 IO1 5 1 5 1 5 1 5 1 IO2 6 2 6 2 6 2 6 2 IO3 7 3 7 3 7 3 7 3 Phase Instruct. Document Number: 002-00124 Rev. *H Password Byte 1 Password Byte 8 Page 114 of 160 S25FL256L/S25FL128L 8.11 Reset Commands Software controlled Reset commands restore the device to its initial power up state, by reloading volatile registers from non-volatile default values. If a software reset is initiated during a Erase, Program or writing of a Register operation the data in that Sector, Page or Register is not stable, the operation that was interrupted needs to be initiated again. However, the volatile SRP1 bit in the Configuration register CR1V[0] and the volatile NVLOCK bit in the Protection Register are not changed by a software reset. The software reset cannot be used to circumvent the SRP1 or NVLOCK bit protection mechanisms for the other security configuration bits. The SRP1 bit and the NVLOCK bit will remain set at their last value prior to the software reset. To clear the SRP1 bit and set the NVLOCK bit to its protection mode selected power on state, a full power-on-reset sequence or hardware reset must be done. A software reset command (RSTEN 66h followed by RST 99h) is executed when CS# is brought high at the end of the instruction and requires tRPH time to execute. In the case of a previous Power-up Reset (POR) failure to complete, a reset command triggers a full power up sequence requiring tPU to complete. Figure 121. Software / Mode Bit Reset Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction This command is also supported in QPI mode. In QPI mode, the instruction is shifted in on IO0-IO3. Figure 122. Software Reset / Mode Bit Command Sequence – QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Instruction 8.11.1 Software Reset Enable (RSTEN 66h) The Reset Enable (RSTEN) command is required immediately before a software reset command (RST 99h) such that a software reset is a sequence of the two commands. Any command other than RST following the RSTEN command, will clear the reset enable condition and prevent a later RST command from being recognized. 8.11.2 Software Reset (RST 99h) The Reset (RST) command immediately following a RSTEN command, initiates the software reset process. Any command other than RST following the RSTEN command, will clear the reset enable condition and prevent a later RST command from being recognized. Document Number: 002-00124 Rev. *H Page 115 of 160 S25FL256L/S25FL128L 8.11.3 Mode Bit Reset (MBR FFh) The Mode Bit Reset (MBR) command is used to return the device from continuous high performance read mode back to normal standby awaiting any new command. Because the hardware RESET# input may be disabled and a device that is in a continuous high performance read mode may not recognize any normal SPI command, a system hardware reset or software reset command may not be recognized by the device. It is recommended to use the MBR command after a system reset when the RESET# signal is not available or, before sending a software reset, to ensure the device is released from continuous high performance read mode. The MBR command sends Ones on SI/IO0for eight SCK cycles. IO1-IO3 are “don’t care” during these cycles. 8.12 Deep Power Down Commands 8.12.1 Deep Power-Down (DPD B9h) Although the standby current during normal operation is relatively low, standby current can be further reduced with the Deep PowerDown command. The lower power consumption makes the Deep Power-down (DPD) command especially useful for battery powered applications (see ICC1 and ICC2 in Section 11.6 DC Characteristics on page 134). The command is initiated by driving the CS# pin low and shifting the instruction code “B9h”. The CS# pin must be driven high after the eighth bit has been latched. If this is not done the Deep Power-Down command will not be executed. After CS# is driven high, the power-down state will be entered within the time duration of tDP (Table 62 on page 141). While in the power-down state only the Release from Deep Power-Down / Device ID command, which restores the device to normal operation, will be recognized. All other commands are ignored. This includes the Read Status Register command, which is always available during normal operation. Ignoring all but one command also makes the Power Down state a useful condition for securing maximum write protection. While in the deep power-down mode the device will only accept a hardware reset which will initiate a Power on Reset that will restore the device to normal operation. The device always powers-up in the normal operation with the standby current of ICC1. Figure 123. Deep Power Down (DPD) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction This command is also supported in QPI mode. In QPI mode, the instruction is shifted in on IO0-IO3. Figure 124. Deep Power Down (DPD) Command Sequence – QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 Phase Document Number: 002-00124 Rev. *H 3 Instruction Page 116 of 160 S25FL256L/S25FL128L 8.12.2 Release from Deep Power-Down / Device ID (RES ABh) The Release from Deep Power-Down /Device ID command is a multi-purpose command. It can be used to release the device from the Deep Power-Down state, or obtain the devices electronic identification (ID) number. To release the device from the Deep Power-Down state, the command is issued by driving the CS# pin low, shifting the instruction code “ABh” and driving CS# high. Release from Deep Power-Down will take the time duration of tRES (Table 62 on page 141) before the device will resume normal operation and other commands are accepted. The CS# pin must remain high during the tRES time duration. When used only to obtain the Device ID while not in the Deep Power-Down state, the command is initiated by driving the CS# pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID bits are then shifted out on the falling edge of CLK with MSb first. The Device ID values for the S25FL-L Family is listed in and Table 51 on page 129. Continued shifting of output beyond the end of the defined ID address space will provide undefined data. The command is completed by driving CS# high. When used to release the device from the Deep Power-Down state and obtain the Device ID, the command is the same as previously described, and shown in Figure 127 and Figure 128, except that after CS# is driven high it must remain high for a time duration of tRES. After this time duration the device will resume normal operation and other commands will be accepted. If the Release from Deep Power-Down / Device ID command is issued while an Erase, Program or Write cycle is in process (when BUSY equals 1) the command is ignored and will not have any effects on the current cycle. Figure 125. Release from Deep Power Down (RES) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 SO_IO1 Phase Instruction This command is also supported in QPI mode. In QPI mode, the instruction is shifted in on IO0-IO3. Figure 126. Release from Deep Power Down (RES) Command Sequence – QPI Mode CS# SCLK IO0 4 0 IO1 5 1 IO2 6 2 IO3 7 3 Phase Instruction Figure 127. Read Identification (RES) Command Sequence CS# SCK SI_IO0 7 6 5 4 3 2 1 0 23 1 SO_IO1 Phase 0 7 Instruction Document Number: 002-00124 Rev. *H Dummy 6 5 4 3 Dev ID 2 1 0 7 1 0 Dev ID Page 117 of 160 S25FL256L/S25FL128L This command is also supported in QPI mode. In QPI mode, the instruction is shifted in on IO0-IO3 and the returning data is shifted out on IO0-IO3. Figure 128. Read Identification (RES) QPI Mode Command CS# SCLK IO0 4 0 IO1 5 1 IO2 6 IO3 7 Phase 4 0 4 0 4 5 5 1 5 1 5 2 6 6 2 6 2 6 3 7 7 3 7 3 7 Instruction Document Number: 002-00124 Rev. *H 23 22 4 Dummy 0 Dev ID Dev ID Page 118 of 160 S25FL256L/S25FL128L 9. 9.1 Data Integrity Erase Endurance Table 45. Erase Endurance Parameter Min Program/Erase cycles per main Flash array sectors Unit 100K [79] Program/Erase cycles per Security Registers or non-volatile register array P/E cycle 1K Note 79. Each write command to a non-volatile register causes a P/E cycle on the entire non-volatile register array. 9.2 Data Retention Table 46. Data Retention Parameter Data Retention Time Test Conditions Minimum Time 10K Program/Erase Cycles 20 100K Program/Erase Cycles 2 Unit Years Contact Cypress Sales or an FAE representative for additional information regarding data integrity. Document Number: 002-00124 Rev. *H Page 119 of 160 S25FL256L/S25FL128L 10. Software Interface Reference 10.1 JEDEC JESD216B Serial Flash Discoverable Parameters This document defines the Serial Flash Discoverable Parameters (SFDP) revision B data structure used in the following Cypress Serial Flash Devices:  S25FL-L Family These data structure values are an update to the earlier revision SFDP data structure currently existing in the above devices. The Read SFDP (RSFDP) command (5Ah) reads information from a separate Flash memory address space for device identification, feature, and configuration information, in accord with the JEDEC JESD216B standard for Serial Flash Discoverable Parameters. The SFDP data structure consists of a header table that identifies the revision of the JESD216 header format that is supported and provides a revision number and pointer for each of the SFDP parameter tables that are provided. The parameter tables follow the SFDP header. However, the parameter tables may be placed in any physical location and order within the SFDP address space. The tables are not necessarily adjacent nor in the same order as their header table entries. The SFDP header points to the following parameter tables:  Basic Flash ❐ This is the original SFDP table. It has a few modified fields and new additional field added at the end of the table.  4 Byte Address Instruction ❐ This is the original SFDP table. It has a few modified fields and new additional field added at the end of the table. The physical order of the tables in the SFDP address space is: SFDP Header, Basic Flash Sector Map, 4 Byte Instruction. The SFDP address space is programmed by Cypress and read-only for the host system. 10.1.1 Serial Flash Discoverable Parameters (SFDP) Address Map The SFDP address space has a header starting at address zero that identifies the SFDP data structure and provides a pointer to each parameter. One Basic Flash parameter is mandated by the JEDEC JESD216B standard. Optional parameter tables for 4 Byte Address Instructions follow the Basic Flash table. Table 47. SFDP Overview Map Byte Address 0000h ,,, 0300h ... Description Location zero within JEDEC JESD216B SFDP space - start of SFDP header Remainder of SFDP header followed by undefined space Start of SFDP parameter Remainder of SFDP JEDEC parameter followed by undefined space Document Number: 002-00124 Rev. *H Page 120 of 160 S25FL256L/S25FL128L 10.1.2 SFDP Header Field Definitions Table 48. SFDP Header SFDP Byte Address SFDP Dword Name 00h 01h 02h Data 53h SFDP Header 1st DWORD 03h Description This is the entry point for Read SFDP (5Ah) command i.e. location zero within SFDP space ASCII “S” 46h ASCII “F” 44h ASCII “D” 50h ASCII “P” 06h SFDP Minor Revision (06h = JEDEC JESD216 Revision B) This revision is backward compatible with all prior minor revisions. SFDP reading and parsing software will work with higher minor revision numbers than the software was designed to handle. Software designed for a higher revisions must know how to handle earlier revisions. Example: SFDP reading and parsing software for minor revision 0 will still work with minor revision 6. SFDP reading and parsing software for minor revision 6 must be designed to also read minor revision 0 or 5. Do not do a simple compare on the minor revision number, looking only for a match with the revision number that the software is designed to handle. There is no problem with using a higher number minor revision. 05h 01h SFDP Major Revision This is the original major revision. This major revision is compatible with all SFDP reading and parsing software. 06h 01h Number of Parameter Headers (zero based, 01h = 2 parameters) 07h FFh Unused 08h 00h Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter) 04h SFDP Header 2nd DWORD 09h 0Ah Parameter Header 0 1st DWORD 0Bh 0Ch 0Dh 0Eh Parameter Header 0 2nd DWORD 0Fh 10h 11h 12h Parameter Header 1 1st DWORD 13h 14h 15h 16h 17h Parameter Header 1 2nd DWORD 06h Parameter Minor Revision (06h = JESD216 Revision B) 01h Parameter Major Revision (01h = The original major revision - all SFDP software is compatible with this major revision. 10h Parameter Table Length (in double words = Dwords = 4 byte units) 10h = 16 Dwords 00h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) JEDEC Basic SPI Flash parameter byte offset = 0300h address 03h Parameter Table Pointer Byte 1 00h Parameter Table Pointer Byte 2 FFh Parameter ID MSB (FFh = JEDEC defined Parameter) 84h Parameter ID LSB (84h = SFDP 4 Byte Address Instructions Parameter) 00h Parameter Minor Revision (00h = Initial version as defined in JESD216 Revision B) 01h Parameter Major Revision (01h = The original major revision - all SFDP software that recognizes this parameter’s ID is compatible with this major revision. 02h Parameter Table Length (in double words = Dwords = 4 byte units) (2h = 2 Dwords) 40h Parameter Table Pointer Byte 0 (Dword = 4 byte aligned) JEDEC parameter byte offset = 0340h 03h Parameter Table Pointer Byte 1 00h Parameter Table Pointer Byte 2 FFh Parameter ID MSB (FFh = JEDEC defined Parameter) Document Number: 002-00124 Rev. *H Page 121 of 160 S25FL256L/S25FL128L 10.1.3 JEDEC SFDP Basic SPI Flash Parameter Table 49. Basic SPI Flash Parameter, JEDEC SFDP Rev B SFDP Parameter Relative Byte Address SFDP Dword Name Data Description E5h Start of SFDP JEDEC parameter Bits 7:5 = unused = 111b Bit 4:3 = 05h is volatile status register write instruction and status register is default non-volatile= 00b Bit 2 = Program Buffer > 64Bytes = 1 Bits 1:0 = Uniform 4KB erase is supported through out the device = 01b 20h Bits 15:8 = Uniform 4KB erase instruction = 20h 02h FBh Bit 23 = Unused = 1b Bit 22 = Supports QOR (1-1-4) Read, Yes = 1b Bit 21 = Supports QIO (1-4-4) Read, Yes =1b Bit 20 = Supports DIO (1-2-2) Read, Yes = 1b Bit19 = Supports DDR, Yes = 1b Bit 18:17 = Number of Address Bytes, 3 or 4 = 01b Bit 16 = Supports Fast Read SIO and DIO Yes = 1b 03h FFh Bits 31:24 = Unused = FFh 04h FFh 00h 01h JEDEC Basic Flash Parameter Dword-1 05h 06h FFh JEDEC Basic Flash Parameter Dword-2 FFh Density in bits, zero based, 128Mb = 07FFFFFFh256Mb = 0FFFFFFFh512Mb = 1FFFFFFFh 07h 07h 128Mb0Fh 256Mb1Fh 512Mb 08h 48h Bits 7:5 = number of QIO Mode cycles = 010b Bits 4:0 = number of Fast Read QIO Dummy cycles = 01000b for default latency code EBh Fast Read QIO instruction code 08h Bits 23:21 = number of Quad Out Mode cycles = 000b Bits 20:16 = number of Quad Out Dummy cycles = 01000b for default latency code 0Bh 6Bh Quad Out instruction code 0Ch 08h Bits 7:5 = number of Dual Out Mode cycles = 000b Bits 4:0 = number of Dual Out Dummy cycles = 01000b for default latency code 3Bh Dual Out instruction code 88 h Bits 23:21 = number of Dual I/O Mode cycles = 100b Bits 20:16 = number of Dual I/O Dummy cycles = 01000b for default latency code 09h 0Ah 0Dh 0Eh JEDEC Basic Flash Parameter Dword-3 JEDEC Basic Flash Parameter Dword-4 0Fh BBh Dual I/O instruction code FEh Bits 7:5 RFU = 111b Bit 4 = QPI supported = 1b Bits 3:1 RFU = 111b Bit 0 = Dual All not supported = 0b FFh Bits 15:8 = RFU = FFh 12h FFh Bits 23:16 = RFU = FFh 13h FFh Bits 31:24 = RFU = FFh 10h 11h JEDEC Basic Flash Parameter Dword-5 14h FFh Bits 7:0 = RFU = FFh 15h FFh Bits 15:8 = RFU = FFh FFh Bits 23:21 = number of Dual All Mode cycles = 111b Bits 20:16 = number of Dual All Dummy cycles = 11111b FFh Dual All instruction code 16h JEDEC Basic Flash Parameter Dword-6 17h Document Number: 002-00124 Rev. *H Page 122 of 160 S25FL256L/S25FL128L Table 49. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued) SFDP Parameter Relative Byte Address SFDP Dword Name Data Description 18h FFh Bits 7:0 = RFU = FFh 19h FFh Bits 15:8 = RFU = FFh 48h Bits 23:21 = number of QPI Mode cycles = 010b Bits 20:16 = number of QPI Dummy cycles = 01000b for default latency code 1Ah JEDEC Basic Flash Parameter Dword-7 1Bh EBh QPI Fast Read instruction code (Same as QIO when QPI is enabled) 1Ch 0Ch Sector type 1 size 2^N Bytes = 4KB = 0Ch (for Uniform 4KB) 20h Sector type 1 instruction 0Fh Sector type 2 size 2^N Bytes = 32KB = 0Fh (for Uniform 32KB) 1Dh 1Eh JEDEC Basic Flash Parameter Dword-8 1Fh 52h Sector type 2 instruction 20h 10h Sector type 3 size 2^N Bytes = 64KB = 10h (for Uniform 64KB) D8h Sector type 3 instruction 00h Sector type 4 size 2^N Bytes = not supported = 00h 23h FFh Sector type 4 instruction = not supported = FFh 24h 21h Bits 31:30 = Sector Type 4 Erase, Typical time units (00b: 1 ms, 01b: 16 ms, 10b: 128 ms, 11b: 1 s) = RFU = 11b 21h 22h JEDEC Basic Flash Parameter Dword-9 25h 5Ah 26h C1h Bits 29:25 = Sector Type 4 Erase, Typical time count = RFU = 1_1111b (typ erase time = count +1 * units = RFU =11111) Bits 24:23 = Sector Type 3 Erase, Typical time units (00b: 1 ms, 01b: 16 ms, 10b: 128 ms, 11b: 1 s) = 16ms = 01b Bits 22:18 = Sector Type 3 Erase, Typical time count = 1_0000b (typ erase time = count +1 * units = 17 * 16ms = 272ms) Bits 17:16 = Sector Type 2 Erase, Typical time units (00b: 1 ms, 01b: 16 ms, 10b: 128 ms, 11b: 1 s) = 16ms = 01b JEDEC Basic Flash Parameter Dword10 27h Bits 15:11 = Sector Type 2 Erase, Typical time count = 0_1011b (typ erase time = count +1 * units = 12 * 16ms = 192ms) FEh Bits 10:9 = Sector Type 1 Erase, Typical time units (00b: 1 ms, 01b: 16 ms, 10b: 128 ms, 11b: 1 s) = 16ms = 01b Bits 8:4 = Sector Type 1 Erase, Typical time count = 0_0010b (typ erase time = count +1 * units = 3 * 16ms = 48ms) Bits 3:0 = Count = (Max Erase time / (2 * Typical Erase time))- 1 = 0001b Multiplier from typical erase time to maximum erase time = 4x multiplier Max Erase time = 2 * (Count +1) * Typ Erase time Binary Fields: 11-11111-01-10000-01-01011-01-00010-0001 Nibble Format: 1111_1110_1100_0001_0101_1010_0010_0001 Hex Format: FE_C1_5A_21 Document Number: 002-00124 Rev. *H Page 123 of 160 S25FL256L/S25FL128L Table 49. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued) SFDP Parameter Relative Byte Address SFDP Dword Name Data Description 28h 81h Bits 23 = Byte Program Typical time, additional byte units (0b:1us, 1b:8us) = 1us = 0b 29h E4h Bits 22:19 = Byte Program Typical time, additional byte count, (count+1) * units, count = 0101b, (typ Program time = count +1 * units = 6 * 1µs = 6µs Bits 18 = Byte Program Typical time, first byte units (0b:1µs, 1b:8µs) = 1µs = 0b Bits 17:14 = Byte Program Typical time, first byte count, (count+1) * units, count = 0111b, (typ Program time = count +1 * units = 8 * 1µs = 8µs Bits 13 = Page Program Typical time units (0b:8us, 1b:64us) = 64us = 1b Bits 12:8 = Page Program Typical time count, (count+1) * units, count = 00100b, (typ Program time = count +1 * units = 5 * 64µs = 320µs) 2Ah 29h Bits 7:4 = N = 1000b, Page size= 2^N = 256B page Bits 3:0 = Count = 0001b = (Max Page Program time / (2 * Typ Page Program time))- 1 Multiplier from typical Page Program time to maximum Page Program time = 4x multiplier Max Page Program time = 2 * (Count +1) * Typ Page Program time JEDEC Basic Flash Parameter Dword11 Binary Fields: 0-0101-0-0111-1-00100-1000-0001 Nibble Format: 0010_1001_1110_0100_1000_0001 Hex Format: 29_74_81 128Mb = 1101_0001b = D1h Bit 31 Reserved = 1b Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms, 10b: 4 s, 11b: 64 s) = 4s = 10b 2Bh D1h 128Mb E2h 256Mb Bits 28:24 = Chip Erase, Typical time count, (count+1)*units, count = 10001b, (typ Program time = count +1 * units = 18 * 4s = 72s 256Mb = 1110_0010b = E2h Bit 31 Reserved = 1b Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms, 10b: 4 s, 11b: 64 s) = 64s = 11b Bits 28:24 = Chip Erase, Typical time count, (count+1) * units, count = 00010b, (typ Program time = count +1 * units = 3 * 64s = 192s Document Number: 002-00124 Rev. *H Page 124 of 160 S25FL256L/S25FL128L Table 49. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued) SFDP Parameter Relative Byte Address SFDP Dword Name Data Description 2Ch CCh Bit 31 = Suspend and Resume supported = 0b 2Dh 83h 2Eh 18h Bits 30:29 = Suspend in-progress erase max latency units (00b: 128ns, 01b: 1us, 10b: 8µs, 11b: 64µs) = 8µs = 10b Bits 28:24 = Suspend in-progress erase max latency count = 00100b, max erase suspend latency = count +1 * units = 5 * 8µs = 40µs Bits 23:20 = Erase resume to suspend interval count = 0001b, interval = count +1 * 64µs = 2 * 64µs = 128µs Bits 19:18 = Suspend in-progress program max latency units (00b: 128ns, 01b: 1µs, 10b: 8µs, 11b: 64µs) = 8µs = 10b Bits 17:13 = Suspend in-progress program max latency count = 00100b, max erase suspend latency = count +1 * units = 5 * 8µs = 40 µs Bits 12:9 = Program resume to suspend interval count = 0001b, interval = count +1 * 64 µs = 2 * 64 µs = 128 µs Bit 8 = RFU = 1b JEDEC Basic Flash Parameter Dword12 2Fh 44h Bits 7:4 = Prohibited operations during erase suspend = xxx0b: May not initiate a new erase anywhere (erase nesting not permitted) + xx0xb: May not initiate a page program anywhere + x1xxb: May not initiate a read in the erase suspended sector size + 1xxxb: The erase and program restrictions in bits 5:4 are sufficient = 1100b Bits 3:0 = Prohibited Operations During Program Suspend = xxx0b: May not initiate a new erase anywhere (erase nesting not permitted) + xx0xb: May not initiate a new page program anywhere (program nesting not permitted) + x1xxb: May not initiate a read in the program suspended page size + 1xxxb: The erase and program restrictions in bits 1:0 are sufficient = 1100b Binary Fields: 0-10-00100-0001-10-00100-0001-1-1100-1100 Nibble Format: 0100_0100_0001_1000_1000_0011_1100_1100 Hex Format: 44_18_83_CC 30h 31h 32h 7Ah JEDEC Basic Flash Parameter Dword13 75h 7Ah Bits 31:24 = Erase Suspend Instruction = 75h Bits 23:16 = Erase Resume Instruction = 7Ah Bits 15:8 = Program Suspend Instruction = 75h Bits 7:0 = Program Resume Instruction = 7Ah 33h 75h 34h F7h Bit 31 = Deep Power Down Supported = supported = 0 35h A2h Bits 30:23 = Enter Deep Power Down Instruction = B9h = 1011_1001b 36h D5h Bits 22:15 = Exit Deep Power Down Instruction = ABh = 1010_1011b Bits 14:13 = Exit Deep Power Down to next operation delay units = (00b: 128ns, 01b: 1µs, 10b: 8µs, 11b: 64µs) = 1µs = 01b Bits 12:8 = Exit Deep Power Down to next operation delay count = 00010b, Exit Deep Power Down to next operation delay = (count+1) * units = 3 * 1µs = 3µs JEDEC Basic Flash Parameter Dword14 37h Bits 7:4 = RFU = Fh 5Ch Bit 3:2 = Status Register Polling Device Busy = 01b: Legacy status polling supported = Use legacy polling by reading the Status Register with 05h instruction and checking WIP bit[0] (0=ready; 1=busy). Bits 1:0 = RFU = 11b Binary Fields: 0-10111001-10101011-01-00010-1111-01-11 Nibble Format: 0101_1100_1101_0101_1010_0010_1111_0111 Hex Format: 5C_D5_A2_F7 Document Number: 002-00124 Rev. *H Page 125 of 160 S25FL256L/S25FL128L Table 49. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued) SFDP Parameter Relative Byte Address SFDP Dword Name Data 38h 22h 39h F6h 3Ah 5Dh Description Bits 31:24 = RFU = FFh Bit 23 = Hold and WP Disable = not supported = 0b Bits 22:20 = Quad Enable Requirements = 101b: QE is bit 1 of the status register 2. Status register 1 is read using Read Status instruction 05h. Status register 2 is read using instruction 35h. QE is set via Write Status instruction 01h with two data bytes where bit 1 of the second byte is one. It is cleared via Write Status with two data bytes where bit 1 of the second byte is zero. Bits 19:16 0-4-4 Mode Entry Method = xxx1b: Mode Bits[7:0] = A5h Note: QE must be set prior to using this mode + x1xxb: Mode Bits[7:0] = Axh + 1xxxb: RFU = 1101b JEDEC Basic Flash Parameter Dword15 3Bh FFh Bits 15:10 0-4-4 Mode Exit Method = xx_xxx1b: Mode Bits[7:0] = 00h will terminate this mode at the end of the current read operation + xx_1xxxb: Input Fh (mode bit reset) on DQ0-DQ3 for 8 clocks. This will terminate the mode prior to the next read operation. + 11_x1xx: RFU = 111101 Bit 9 = 0-4-4 mode supported = 1 Bits 8:4 = 4-4-4 mode enable sequences = 0_0010b: issue instruction 38h Bits 3:0 = 4-4-4 mode disable sequences = 0010b: 4-4-4 issues F5h instruction Binary Fields: 11111111-0-101-1101-111101-1-00010-0010 Nibble Format: 1111_1111_0101_1101_1111_0110_0010_0010 Hex Format: FF_5D_F6_22 Document Number: 002-00124 Rev. *H Page 126 of 160 S25FL256L/S25FL128L Table 49. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued) SFDP Parameter Relative Byte Address SFDP Dword Name Data Description Bits 31:24 = Enter 4-Byte Addressing = xxxx_xxx1b:issue instruction B7 (preceding write enable not required = xxxx_1xxxb: 8-bit volatile bank register used to define A[30:24] bits. MSb (bit[7]) is used to enable/disable 4-byte address mode. When MSb is set to ‘1’, 4-byte address mode is active and A[30:24] bits are don’t care. Read with instruction 16h. Write instruction is 17h with 1 byte of data. When MSb is cleared to ‘0’, select the active 128 Mb segment by setting the appropriate A[30:24] bits and use 3-Byte addressing. + xx1x_xxxxb: Supports dedicated 4-Byte address instruction set. Consult vendor data sheet for the instruction set definition or look for 4 Byte Address Parameter Table. + 1xxx_xxxxb: Reserved = 10100001b 3Ch E8h 3Dh 50h 3Eh F8h Bits 23:14 = Exit 4-Byte Addressing = xx_xxxx_xxx1b:issue instruction E9h to exit 4-Byte address mode (Write enable instruction 06h is not required) = xx_xxxx_1xxxb: 8-bit volatile bank register used to define A[30:24] bits. MSb (bit[7]) is used to enable/disable 4-byte address mode. When MSb is cleared to ‘0’, 3-byte address mode is active and A30:A24 are used to select the active 128 Mb memory segment. Read with instruction 16h. Write instruction is 17h, data length is 1 byte. + xx_xx1x_xxxxb: Hardware reset + xx_x1xx_xxxxb: Software reset (see bits 13:8 in this DWORD) + xx_1xxx_xxxxb: Power cycle + x1_xxxx_xxxxb: Reserved + 1x_xxxx_xxxxb: Reserved = 1111100001b JEDEC Basic Flash Parameter Dword16 3Fh A1h Bits 13:8 = Soft Reset and Rescue Sequence Support = x1_xxxxb: issue reset enable instruction 66h, then issue reset instruction 99h. The reset enable, reset sequence may be issued on 1,2, or 4 wires depending on the device operating mode = 010000b Bit 7 = RFU = 1 Bits 6:0 = Volatile or Non-Volatile Register and Write Enable Instruction for Status Register 1 = xxx_1xxxb: Non-Volatile/Volatile status register 1 powers-up to last written value in the non-volatile status register, use instruction 06h to enable write to non-volatile status register. Volatile status register may be activated after power-up to override the nonvolatile status register, use instruction 50h to enable write and activate the volatile status register. + x1x_xxxxb: Reserved + 1xx_xxxxb: Reserved = 1101000b Binary Fields: 10100001-1111100001-010000-1-1101000 Nibble Format: 1010_0001_1111_1000_0101_0000_1110_1000 Hex Format: A1_F8_60_E8 Document Number: 002-00124 Rev. *H Page 127 of 160 S25FL256L/S25FL128L 10.1.4 JEDEC SFDP 4-byte Address Instruction Table Table 50. 4-byte Address Instruction, JEDEC SFDP Rev B SFDP Parameter Relative Byte Address SFDP Dword Name Data 40h FBh 41h 8Eh 42h F3h 43h JEDEC 4 Byte Address Instructions Parameter Dword1h FFh Description Supported = 1, Not Supported = 0 Bits 31:20 = RFU = FFFh Bit 19 = Support for non-volatile individual sector lock write command, Instruction = E3h = 0 Bit 18 = Support for non-volatile individual sector lock read command, Instruction = E2h = 0 Bit 17 = Support for volatile individual sector lock Write command, Instruction = E1h = 1 Bit 16 = Support for volatile individual sector lock Read command, Instruction = E0h = 1 Bit 15 = Support for (1-4-4) DTR_Read Command, Instruction = EEh = 1 Bit 14 = Support for (1-2-2) DTR_Read Command, Instruction = BEh = 0 Bit 13 = Support for (1-1-1) DTR_Read Command, Instruction = 0Eh = 0 Bit 12 = Support for Erase Command – Type 4 = 0 Bit 11 = Support for Erase Command – Type 3 = 1 Bit 10 = Support for Erase Command – Type 2 = 1 Bit 9 = Support for Erase Command – Type 1 = 1 Bit 8 = Support for (1-4-4) Page Program Command, Instruction = 3Eh =0 Bit 7 = Support for (1-1-4) Page Program Command, Instruction = 34h = 1 Bit 6 = Support for (1-1-1) Page Program Command, Instruction = 12h = 1 Bit 5 = Support for (1-4-4) FAST_READ Command, Instruction = ECh = 1 Bit 4 = Support for (1-1-4) FAST_READ Command, Instruction = 6Ch = 1 Bit 3 = Support for (1-2-2) FAST_READ Command, Instruction = BCh = 1 Bit 2 = Support for (1-1-2) FAST_READ Command, Instruction = 3Ch = 0 Bit 1 = Support for (1-1-1) FAST_READ Command, Instruction = 0Ch = 1 Bit 0 = Support for (1-1-1) READ Command, Instruction = 13h = 1 Nibble Format: 1111_1111_1111_0011_1000_1110_1111_1011 Hex Format: FF_F3_8E_FB 44h 45h 46h 47h JEDEC 4 Byte Address Instructions Parameter Dword2h Document Number: 002-00124 Rev. *H 21h 52h DCh FFh Bits 31:24 = FFh = Instruction for Erase Type 4: RFU Bits 23:16 = DCh = Instruction for Erase Type 3 Block Bits 15:8 = 52h = Instruction for Erase Type 2 Half Block Bits 7:0 = 21h = Instruction for Erase Type 1 Sector Page 128 of 160 S25FL256L/S25FL128L 10.2 Device ID Address Map 10.2.1 Field Definitions Table 51. Manufacturer Device Type Byte Address Data 00h 01h Manufacturer ID for Cypress Description 01h 60h Device ID MSB - Memory Interface Type 02h 18h (128Mb) 19h (256Mb) 03h Undefined Device ID LSB - Density and Features Reserved for Future Use Table 52. Unique Device ID Byte Address Data 00h to 07 8 Byte Unique Device ID Description 64-bit unique ID number, see section Section 6.3.1 Device Unique ID on page 24. 10.3 Initial Delivery State The device is shipped from Cypress with non-volatile bits set as follows:  The entire memory array is erased: i.e. all bits are set to 1 (each byte contains FFh).  The Security Region address space has all bytes erased to FFh.  The SFDP address space contains the values as defined in the description of the SFDP address space.  The ID address space contains the values as defined in the description of the ID address space.  The Status Register 1 Non-volatile contains 00h (all SR1NV bits are cleared to 0’s).  The Configuration Register 1 Non-volatile contains 00h.  The Configuration Register 2 Non-volatile contains 60h.  The Configuration Register 3 Non-volatile contains 78h.  The Password Register contains FFFFFFFF-FFFFFFFFh  The IRP Register bits are FFFDh for Standard Part and FFFFh for High Security Part.  The PRPR Register bits are FFFFFFh Document Number: 002-00124 Rev. *H Page 129 of 160 S25FL256L/S25FL128L 11. Electrical Specifications 11.1 Absolute Maximum Ratings (Note 80) Storage Temperature Plastic Packages.....................................................................................................................–65°C to +150°C Ambient Temperature with Power Applied.................................................................................................................–65°C to +125°C VCC...............................................................................................................................................................................–0.5 V to +4.0 V Input voltage with respect to Ground (VSS) (Note 1)...........................................................................................–0.5 V to VCC + 0.5 V Output Short Circuit Current (Note 2)...................................................................................................................................... 100 mA Notes 80. See Section 11.4.3 Input Signal Overshoot on page 131 for allowed maximums during signal transition. 81. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 82. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. 11.2 Latchup Characteristics Table 53. Latchup Specification Description Input voltage with respect to VSS on all input only connections Input voltage with respect to VSS on all I/O connections VCC Current Min Max Unit –1.0 VCC + 1.0 V –100 +100 mA Note 83. Excludes power supply VCC. Test conditions: VCC = 3.0 V, one connection at a time tested, connections not being tested are at VSS. 11.3 Thermal Resistance Table 54. Thermal Resistance Parameter Theta JA Description SO316 SOC008 WND008 WNG008 FAB024 FAC024 Unit Thermal resistance (junction to ambient) 38 53.27 32 18 39 39 °C/W Document Number: 002-00124 Rev. *H Page 130 of 160 S25FL256L/S25FL128L 11.4 Operating Ranges Operating ranges define those limits between which the functionality of the device is guaranteed. 11.4.1 Power Supply Voltages 2.7V to 3.6V VCC 11.4.2 Temperature Ranges Parameter Symbol Ambient Temperature Devices Min Max Industrial (I) +85 Industrial Plus (V) +105 Extended (N) TA Spec Automotive, AEC-Q100 Grade 3 (A) –40 +125 +85 Automotive, AEC-Q100 Grade 2 (B) +105 Automotive, AEC-Q100 Grade 1 (M) +125 Unit °C 11.4.3 Input Signal Overshoot During DC conditions, input or I/O signals should remain equal to or between VSS and VCC. During voltage transitions, inputs or I/Os may overshoot VSS to –1.0 V or overshoot to VCC +1.0 V, for periods up to 20 ns. Figure 129. Maximum Negative Overshoot Waveform VSS to VCC –1.0 V < = 20 ns Figure 130. Maximum Positive Overshoot Waveform < = 20 ns VCC + 1.0 V VSS to VCC Document Number: 002-00124 Rev. *H Page 131 of 160 S25FL256L/S25FL128L 11.5 Power-Up and Power-Down The device must not be selected at power-up or power-down (that is, CS# must follow the voltage applied on VCC) until VCC reaches the correct value as follows:  VCC (min) at power-up, and then for a further delay of tPU  VSS at power-down User is not allowed to enter any command until a valid delay of tPU has elapsed after the moment that VCC rises above the minimum VCC threshold. See Figure 131. However, correct operation of the device is not guaranteed if VCC returns below VCC (min) during tPU. No command should be sent to the device until the end of tPU. The device draws IPOR during tPU. After power-up (tPU), the device is in Standby mode, draws CMOS standby current (ISB), and the WEL bit is reset. During power-down or if supply voltage drops below VCC(cut-off), the supply voltage must stay below VCC(low) for a period of tPD for the part to initialize correctly on power-up. See Figure 132 on page 133. If during a voltage drop the VCC stays above VCC (cut-off) the part will stay initialized and will work correctly when VCC is again above VCC (min). In the event Power-on Reset (POR) did not complete correctly after power up, the assertion of the RESET# signal or receiving a software reset command (RSTEN 66h followed by RST 99h) will restart the POR process. If VCC drops below the VCC (Cut-off) during an embedded program or erase operation the embedded operation may be aborted and the data in that memory area may be incorrect. Normal precautions must be taken for supply rail decoupling to stabilize the VCC supply at the device. Each device in a system should have the VCC rail decoupled by a suitable capacitor close to the package supply connection (this capacitor is generally of the order of 0.1 µf). Table 55. Power-Up / Power-Down Voltage and Timing Symbol Parameter VCC (min) VCC (cut-off) VCC (low) Min Max VCC (minimum operation voltage) 2.7 – VCC (Cut 0ff where re-initialization is needed) 2.4 – VCC (low voltage for initialization to occur) 1.0 – – 300 10.0 – tPU VCC (min) to Read operation tPD VCC (low) time Unit V µs Figure 131. Power-up VCC (Max) VCC (Min) tPU Full Device Access Time Document Number: 002-00124 Rev. *H Page 132 of 160 S25FL256L/S25FL128L Figure 132. Power-down and Voltage Drop VCC (Max) No Device Access Allowed VCC (Min) tPU VCC (Cut-off) VCC (Low) tPD Time Document Number: 002-00124 Rev. *H Page 133 of 160 S25FL256L/S25FL128L 11.6 DC Characteristics Table 56. DC Characteristics — Operating Temperature Range –40°C to +85°C Symbol Parameter Test Conditions Min Typ[84] Max VIL Input Low Voltage – –0.5 – 0.3  VCC VIH Input High Voltage – 0.7  VCC – VCC+0.4 VOL Output Low Voltage IOL = 0.1 mA, VCC = VCC min – 0.2 VOH Output High Voltage IOH = –0.1 mA VCC - 0.2 – – – ±2 – – ±2 15 15 15 20 25 30 30 35 20 25 ILI Input Leakage Current VCC = VCC Max, VIN=VIH or VSS, CS# = VIH ILO Output Leakage Current VCC = VCC Max, VIN = VIH or VSS, CS# = VIH ICC1 Active Power Supply Current (READ)[85] Serial SDR @ 5 MHz Serial SDR @ 10 MHz Serial SDR @ 20 MHz Serial SDR @ 50 MHz Serial SDR @ 108 MHz Serial SDR @ 133 MHz QIO/QPI SDR @ 108 MHz QIO/QPI SDR @ 133 MHz QIO/QPI DDR @ 30 MHz QIO/QPI DDR @ 66 MHz – 10 10 10 15 20 22 25 30 15 22 ICC2 Active Power Supply Current (Page Program) CS# = VCC – 40 50 ICC3 Active Power Supply Current (WRR or WRAR) CS# = VCC – 24 30 ICC4 Active Power Supply Current (SE) CS# = VCC – 20 25 ICC5 Active Power Supply Current (HBE, BE) CS# = VCC – 25 35 RESET#, CS# = VCC; SI, SCK = VCC or VSS: SPI, Dual I/O and Quad I/O Modes – 20 35 RESET#, CS# = VCC; SI, SCK = VCC or VSS: QPI Mode – 40 60 ISB Standby Current IDPD Deep Power Down Current RESET#, CS# = VCC, VIN = GND or VCC – 2 20 IPOR Power On Reset Current RESET#, CS# = VCC; SI, SCK = VCC or VSS – 15 30 Unit V µA mA µA mA Notes 84. Typical values are at TAI = 25°C and VCC = 3.0 V. 85. Outputs unconnected during read data return. Output switching current is not included. Document Number: 002-00124 Rev. *H Page 134 of 160 S25FL256L/S25FL128L Table 57. DC Characteristics — Operating Temperature Range –40°C to +105°C Symbol Parameter Test Conditions Min Typ[86] Max VIL Input Low Voltage – –0.5 – 0.3  VCC VIH Input High Voltage – 0.7  VCC – VCC+0.4 VOL Output Low Voltage IOL = 0.1 mA, VCC = VCC min – – 0.2 VOH Output High Voltage IOH = –0.1 mA VCC - 0.2 – – ILI V = VCC Max, VIN = VIH or VSS, Input Leakage Current CC CS# = VIH – – ±4 ILO Output Leakage Current VCC = VCC Max, VIN = VIH or VSS, CS# = VIH – – ±4 ICC1 Active Power Supply Current (READ)[87] Serial SDR @ 5 MHz Serial SDR @ 10MHz Serial SDR @ 20 MHz Serial SDR @ 50 MHz Serial SDR @ 108Mhz Serial SDR @133MHz QIO/QPI SDR @ 108MHz QIO/QPI SDR @ 133 MHz QIO/QPI DDR @ 30MHz QIO/QPI DDR @ 66 MHz – 10 10 10 15 20 22 25 30 15 22 15 15 15 20 30 30 35 30 20 25 ICC2 Active Power Supply Current (Page Program) CS# = VCC – 40 50 ICC3 Active Power Supply Current (WRR or WRAR) CS# = VCC – 24 35 ICC4 Active Power Supply Current (SE) CS# = VCC – 20 30 ICC5 Active Power Supply Current (HBE, BE) CS# = VCC – 25 35 RESET#, CS# = VCC; SI, SCK = VCC or VSS: SPI, Dual I/O and Quad I/O Modes – 20 45 RESET#, CS# = VCC; SI, SCK = VCC or VSS: QPI Mode – 40 80 ISB Standby Current Unit V µA IDPD Deep Power Down Current RESET#, CS# = VCC, VIN = GND or VCC – 2 30 IPOR Power On Reset Current RESET#, CS# = VCC; SI, SCK = VCC or VSS – 15 30 mA µA mA Notes 86. Typical values are at TAI = 25°C and VCC = 3.0 V. 87. Outputs unconnected during read data return. Output switching current is not included. Document Number: 002-00124 Rev. *H Page 135 of 160 S25FL256L/S25FL128L Table 58. DC Characteristics — Operating Temperature Range –40°C to +125°C Symbol Parameter Test Conditions Min Typ[88] Max VIL Input Low Voltage – –0.5 – 0.3  VCC VIH Input High Voltage – 0.7  VCC – VCC+0.4 VOL Output Low Voltage IOL = 0.1 mA, VCC = VCC min – – 0.2 VOH Output High Voltage IOH = –0.1 mA VCC - 0.2 – – Input Leakage Current VCC = VCC Max, VIN = VIH or VSS, CS# = VIH – – ±4 Output Leakage Current VCC = VCC Max, VIN = VIH or VSS, CS# = VIH – – ±4 ICC1 Active Power Supply Current (READ)[89] Serial SDR @ 5 MHz Serial SDR @ 10MHz Serial SDR @ 20 MHz Serial SDR @ 50 MHz Serial SDR @ 108Mhz Serial SDR @ 133MHz QIO/QPI SDR @ 108MHz QIO/QPI SDR @ 133 MHz QIO/QPI DDR @ 30MHz QIO/QPI DDR @ 66 MHz – 10 10 10 15 20 22 25 30 15 22 15 15 15 20 30 30 35 35 20 25 ICC2 Active Power Supply Current (Page Program) CS# = VCC – 40 50 ICC3 Active Power Supply Current (WRR or WRAR) CS# = VCC – 24 35 ICC4 Active Power Supply Current (SE) CS# = VCC – 20 30 ICC5 Active Power Supply Current (HBE, BE) CS# = VCC – 25 35 – 20 70 Standby Current RESET#, CS# = VCC; SI, SCK = VCC or VSS: SPI, Dual I/O and Quad I/O Modes RESET#, CS# = VCC; SI, SCK = VCC or VSS: QPI Mode – 40 80 ILI ILO ISB Unit V µA IDPD Deep Power Down Current RESET#, CS# = VCC, VIN = GND or VCC – 2 50 IPOR Power On Reset Current RESET#, CS# = VCC; SI, SCK = VCC or VSS – 15 35 mA µA mA Notes 88. Typical values are at TAI = 25°C and VCC = 1.8 V. 89. Outputs unconnected during read data return. Output switching current is not included. 11.6.1 Active Power and Standby Power Modes The device is enabled and in the Active Power mode when Chip Select (CS#) is Low. When CS# is high, the device is disabled, but may still be in an Active Power mode until all program, erase, and write operations have completed. The device then goes into the Standby Power mode, and power consumption drops to ISB. 11.6.2 Deep Power Down Power Mode (DPD) The Deep Power Down mode is enabled by inputing the command instruction code “B9h” and the power consumption drops to IDPD. In DPD mode the device responds only to the Resume from DPD command (RES ABh) or Hardware reset (RESET# and IO3 / RESET#). All other commands are ignored during DPD mode. Document Number: 002-00124 Rev. *H Page 136 of 160 S25FL256L/S25FL128L 12. Timing Specifications 12.1 Key to Switching Waveforms Figure 133. Waveform Element Meanings Input Valid at logic high or low High Impedance Any change permitted Logic high Logic low Valid at logic high or low High Impedance Changing, state unknown Logic high Logic low Symbol Output 12.2 AC Test Conditions Figure 134. Test Setup Device Under Test CL Table 59. AC Measurement Conditions Symbol Parameter Min CL Load Capacitance – – Input Pulse Voltage 0.2  VCC – Input Timing Ref Voltage – Output Timing Ref Voltage Max 15 / 30 Unit [90] pF 0.8 VCC V 0.5 VCC Notes 90. Load Capacitance depends on the operation frequency or Mode of operation. 91. AC characteristics tables assume clock and data signals have the same slew rate (slope). See Section 62 SDR AC Characteristics on page 141 note [95] for Slew Rates at operating frequencies. Figure 135. Input, Output, and Timing Reference Levels Input Levels Output Levels VCC + 0.4V 0.8 x VCC 0.5 x VCC 0.2 x VCC - 0.5V Document Number: 002-00124 Rev. *H VCC - 0.2V Timing Reference Level 0.2V Page 137 of 160 S25FL256L/S25FL128L 12.2.1 Capacitance Characteristics Table 60. Capacitance Parameter Test Conditions Min Max CIN Input Capacitance (applies to SCK, CS#, RESET#, IO3 / RESET#) 1 MHz – 8 COUT Output Capacitance (applies to All I/O) 1 MHz – 8 Unit pF 12.3 Reset If a Hardware Reset is initiated during a Erase, Program or writing of a Register operation the data in that Sector, Page or Register is not stable, the operation that was interrupted needs to be initiated again. If a Hardware Reset is initiated during a Software Reset operation, the Hardware Reset might be ignored. 12.3.1 Power-On (Cold) Reset The device executes a Power-On Reset (POR) process until a time delay of tPU has elapsed after the moment that VCC rises above the minimum VCC threshold. See Figure 131 on page 132, Table 55 on page 132. The device must not be selected (CS# to go high with VCC) during power-up (tPU), i.e. no commands may be sent to the device until the end of tPU. RESET# and IO3 / RESET# reset function is ignored during POR. If RESET# or IO3 / RESET# is low during POR and remains low through and beyond the end of tPU, CS# must remain high until tRH after RESET# and IO3 / RESET# returns high. RESET# and IO3 / RESET# must return high for greater than tRS before returning low to initiate a hardware reset. The IO3 / RESET# input functions as the RESET# signal when CS# is high for more than tCS time or when Quad or QPI Mode is not enabled CR1V[1]=0 or CR2V[3]=0. Figure 136. Reset low at the end of POR VCC tPU RESET# If RESET# is low at tPU end tRH CS# CS# must be high at tPU end Figure 137. Reset high at the end of POR VCC tPU RESET# If RESET# is high at tPU end tPU CS# CS# may stay high or go low at tPU end Figure 138. POR followed by Hardware Reset VCC tPU tRS RESET# tPU CS# Document Number: 002-00124 Rev. *H Page 138 of 160 S25FL256L/S25FL128L 12.3.2 RESET # and IO3 / RESET# Input Initiated Hardware (Warm) Reset The RESET# and IO3 / RESET# inputs can function as the RESET# signal. Both inputs can initiate the reset operation under conditions. The RESET# input initiates the reset operation when transitions from VIH to VIL for > tRP, the device will reset register states in the same manner as power-on reset but, does not go through the full reset process that is performed during POR. The hardware reset process requires a period of tRPH to complete. The RESET# input is available only on the SOIC 16 lead and BGA ball packages. The IO3 / RESET# input initiates the reset operation under the following when CS# is high for more than tCS time or when Quad or QPI Mode is not enabled CR1V[1]=0 or CR2V[3]=0. The IO3 / RESET# input has an internal pull-up to VCC and may be left unconnected if Quad or QPI mode is not used. The tCS delay after CS# goes high gives the memory or host system time to drive IO3 high after its use as a Quad or QPI mode I/O signal while CS# was low. The internal pull-up to VCC will then hold IO3 / RESET# high until the host system begins driving IO3 / RESET#. The IO3 / RESET# input is ignored while CS# remains high during tCS, to avoid an unintended Reset operation. If CS# is driven low to start a new command, IO3 / RESET# is used as IO3. When the device is not in Quad or QPI mode or, when CS# is high, and IO3 / RESET# transitions from VIH to VIL for > tRP, following tCS, the device will reset register states in the same manner as power-on reset but, does not go through the full reset process that is performed during POR. The hardware reset process requires a period of tRPH to complete. If the POR process did not complete correctly for any reason during power-up (tPU), RESET# going low will initiate the full POR process instead of the hardware reset process and will require tPU to complete the POR process. The software reset command (RSTEN 66h followed by RST 99h) is independent of the state of RESET # and IO3 / RESET#. If RESET# and IO3 / RESET# is high or unconnected, and the software reset instructions are issued, the device will perform software reset. Additional notes:  If both RESET# and IO3 / RESET# input options are available use only one reset option in your system. IO3 / RESET# input reset operation can be disable by setting CR2NV[7] = 0 (see Table 14 on page 32) setting the IO3_RESET to only operate as IO3. The RESET# input can be disable by not connecting or tying the RESET# input to VIH. RESET# and IO3 / RESET# must be high for tRS following tPU or tRPH, before going low again to initiate a hardware reset.  When IO3 / RESET# is driven low for at least a minimum period of time (tRP), following tCS, the device terminates any operation in progress, makes all outputs high impedance, and ignores all read/write commands for the duration of tRPH. The device resets the interface to standby state.  If Quad or QPI mode and the IO3 / RESET# feature are enabled, the host system should not drive IO3 low during tCS, to avoid driver contention on IO3. Immediately following commands that transfer data to the host in Quad or QPI mode, e.g. Quad I/O Read, the memory drives IO3 / RESET# high during t CS, to avoid an unintended Reset operation. Immediately following commands that transfer data to the memory in Quad mode, e.g. Page Program, the host system should drive IO3 / RESET# high during tCS, to avoid an unintended Reset operation.  If Quad or QPI mode is not enabled, and if CS# is low at the time IO3 / RESET# is asserted low, CS# must return high during tRPH before it can be asserted low again after tRH. Table 61. Hardware Reset Parameters Parameter Description Limit tRS Reset Setup - Prior Reset end and RESET# high before RESET# low tRPH Reset Pulse Hold - RESET# low to CS# low tRP RESET# Pulse Width 200 tRH Reset Hold - RESET# high before CS# low 150 Min Time Unit 50 ns 100 µs ns Notes 92. RESET# and IO3 / RESET# Low is ignored during Power-up (tPU). If Reset# is asserted during the end of tPU, the device will remain in the reset state and tRH will determine when CS# may go Low. 93. If Quad or QPI mode is enabled, IO3 / RESET# Low is ignored during tCS 94. Sum of tRP and tRH must be equal to or greater than tRPH. Document Number: 002-00124 Rev. *H Page 139 of 160 S25FL256L/S25FL128L Figure 139. Hardware Reset using RESET# Input tRP RESET# Any prior reset tRH tRH tRPH tRS tRPH CS# Figure 140. Hardware Reset when Quad or QPI Mode is not enabled and IO3 / RESET# is Enabled tRP IO3_RESET# Any prior reset tRH tRH tRPH tRS tRPH CS# Figure 141. Hardware Reset when Quad or QPI Mode and IO3 / RESET# are Enabled tDIS IO3_RESET# tRP Reset Pulse tRH tCS CS# tRPH Prior access using IO3 for data Document Number: 002-00124 Rev. *H Page 140 of 160 S25FL256L/S25FL128L 12.4 SDR AC Characteristics Table 62. SDR AC Characteristics Symbol Parameter Min Max FSCK, R SCK Clock Frequency for READ and 4READ instructions DC 50 FSCK, C SCK Clock Frequency for the following dual and quad commands: QOR, 4QOR, DIOR, 4DIOR, QIOR, 4QIOR DC 133 PSCK MHz 1/ FSCK – tWH, tCH Clock High Time 50% PSCK ±5% – tWL, tCL Clock Low Time 50% PSCK ±5% – 0.1 – 0.1 – CS# High Time (Any Read Instructions) 20 – CS# High Time (All other Non-Read instructions) 50 – CS# Active Setup Time (relative to SCK) 3 – tCRT, tCLCH tCFT, tCHCL tCS tCSS SCK Clock Period Clock Rise Time (slew rate)[95] Clock Fall Time (slew rate) [95] tCSH CS# Active Hold Time (relative to SCK) 5 – tSU Data in Setup Time 3 – tHD Data in Hold Time 2 tV tHO Unit ns V/ns – [96] Clock Low to Output Valid – 8 6[97] Output Hold Time 1 – – 8 20[99] [98] – tDIS Output Disable Time Output Disable Time (when Reset feature and Quad mode are both enabled) tWPS WP# Setup Time[100] 20 – tWPH WP# Hold Time[100] 100 – TDP CS# High to Deep Power Down Mode – 3 TRES CS# High to Release from Deep Power Down Mode – 5 tQEN QIO or QPI Enter mode, time needed to issue next command – 1.5 tQEXN QIO or QPI Exit mode, time needed to issue next command – 1 ns µs Notes 95. tCRT, tCLCH Clock Rise and fall slew rate for Fast clock (108 MHz) min is 1.5 V/ns and for Slow Clock (50 MHz) min is 1.0 V/ns. 96. Full VCC range and CL = 30 pF. 97. Full VCC range and CL = 15 pF. 98. Output HI-Z is defined as the point where data is no longer driven. 99. tDIS require additional time when the Reset feature and Quad mode are enabled (CR2V[7] = 1 and CR1V[1] = 1). 100.Only applicable as a constraint for WRR or WRAR instruction when SRP0 is set to a 1. Document Number: 002-00124 Rev. *H Page 141 of 160 S25FL256L/S25FL128L 12.4.1 Clock Timing Figure 142. Clock Timing PSCK tCL tCH VIH min VCC / 2 VIL max tCFT tCRT 12.4.2 Input / Output Timing Figure 143. SPI Single Bit Input Timing tCS CS# tCSH tCSS SCK tSU tHD SI_IO0 MSb IN LSb IN SO Figure 144. SPI Single Bit Output Timing tCS CS# SCK SI tV SO Document Number: 002-00124 Rev. *H tHO MSb OUT tDIS LSb OUT Page 142 of 160 S25FL256L/S25FL128L Figure 145. SDR MIO Timing tCS CS# tCSH tCSS SCLK tSU tHD IO MSB IN tV LSB IN tHO tV MSB OUT. tDIS LSB OUT Figure 146. WP# Input Timing CS# tWPS tWPH WP# SCLK SI 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0 SO Phase WRR or WRAR Instruction Document Number: 002-00124 Rev. *H Input Data Page 143 of 160 S25FL256L/S25FL128L 12.5 DDR AC Characteristics Table 63. DDR AC Characteristics 66 MHz operation Symbol Parameter FSCK, R SCK Clock Frequency for DDR READ instruction PSCK, R SCK Clock Period for DDR READ instruction Min Max Unit DC 66 MHz 1/FSCK – ns tcrt Clock Rise Time (slew rate) 1.5 – tcft Clock Fall Time (slew rate) 1.5 – tWH, tCH Clock High Time 50% PSCK -5% – tWL, tCL Clock Low Time 50% PSCK -5% – tCS CS# High Time (Read Instructions) CS# High Time (Read Instructions when Reset feature is enabled) 20 50 – tCSS CS# Active Setup Time (relative to SCK) 3 – tSU IO in Setup Time 3 – tHD IO in Hold Time 2 – Clock Low to Output Valid – 8[101] 6[102] tHO Output Hold Time 1 – tDIS Output Disable Time Output Disable Time (when Reset feature is enabled) – 8 20 First IO to last IO data valid time – 600[103] tV tO_skew V/ns ns ps Notes 101.Full VCC range and CL = 30 pF. 102.Full VCC range and CL = 15 pF. 103.Not tested. 12.5.1 DDR Input Timing Figure 147. SPI DDR Input Timing tCS CS# tCSS SCK tHD tSU tHD tSU IO's Inst. MSB Document Number: 002-00124 Rev. *H MSB IN LSB IN Page 144 of 160 S25FL256L/S25FL128L 12.5.2 DDR Output Timing Figure 148. SPI DDR Output Timing tCS CS# SCK tHO IO's tV tV tDIS MSB LSB 12.5.3 DDR Data Valid Timing using DLP Figure 149. SPI DDR Data Valid Window p SCK t CL t CH SCK t IO_SKEW tV t OTT IO Slow Slow D1 Slow D2 tV IO Fast Fast D1 Fast D2 t V _min t HO t DV IO_valid D1 D2 The minimum data valid window (tDV) and tV minimum can be calculated as follows: tDV = Minimum half clock cycle time (tCLH[104]) - tOTT[106] - tIO_SKEW[105] tV _min = tHO + tIO_SKEW + tOTT Example:  66 MHz clock frequency = 15 ns clock period, DDR operations and duty cycle of 45% or higher ❐ tCLH = 0.45 x PSCK = 0.45 x 15 ns = 6.75 ns  tOTT calculation[107] is bus impedance of 45 ohm and capacitance of 37 pf, with timing reference of 0.75 VCC, the rise time from 0 to 1 or fall time 1 to 0 is 1.4[110] x RC time constant (Tau)[109] = 1.4 x 1.67 ns = 2.34 ns ❐ tOTT = rise time or fall time = 2.34 ns.  Data Valid Window ❐ tDV = tCLH - tIO_SKEW - tOTT = 6.75 ns - 600 ps - 2.34 ns = 3.81 ns  tV Minimum ❐ tV _min = tHO + tIO_SKEW + tOTT = 1.0 ns + 600 ps + 2.34 ns = 3.94 ns Notes 104.tCLH is the shorter duration of tCL or tCH. 105.tIO_SKEW is the maximum difference (delta) between the minimum and maximum tV (output valid) across all IO signals. 106.tOTT is the maximum Output Transition Time from one valid data value to the next valid data value on each IO. 107.tOTT is dependent on system level considerations including: a. Memory device output impedance (drive strength). b. System level parasitics on the IOs (primarily bus capacitance). c. Host memory controller input VIH and VIL levels at which 0 to 1 and 1 to 0 transitions are recognized. d. tOTT is not a specification tested by Cypress, it is system dependent and must be derived by the system designer based on the above considerations. 108.tDV is the data valid window. 109.Tau = R (Output Impedance) x C (Load capacitance). 110.Multiplier of Tau time for voltage to rise to 75% of VCC. Document Number: 002-00124 Rev. *H Page 145 of 160 S25FL256L/S25FL128L 12.6 Embedded Algorithm Performance Tables Table 64. Dual Quad Program and Erase Performance Symbol Parameter Min Typ (111) Max Unit ms tW Non-volatile Register Write Time – 145 750 tPP Page Programming (256 Bytes) – 300 1,200 tBP1 Byte Programming (First Byte)[113] – 50 60 6 20 [113] tBP2 Additional Byte Programming (After First Byte) – tSE Sector Erase Time (4KB physical sectors) – 50 250 tHBE Half Block Erase Time (32KB physical sectors) – 190 363 tBE Block Erase Time (64KB physical sectors) – 270 725 tCE Chip Erase Time (S25FL128L) – 70 180 tCE Chip Erase Time (S25FL256L) – 140 360 µs ms sec Notes 111.Typical program and erase times assume the following conditions: 25°C, VCC = 3.0 V; 10,000 cycles; checkerboard data pattern. 112.The programming time for any OTP programming command is the same as tPP. This includes IRPP 2Fh, PASSP E8h and PDLRNV 43h. 113.For multiple bytes after firs byte within a page tBPN = tBP1 + tBP2 * N (typical and tBPN = tBP1 = tBP2 * N (max), where N = number of bytes programmed. Table 65. Program or Erase Suspend AC Parameters Parameter Suspend Latency (tSL) Typical Max – 40 100 – Unit µs Resume to next Suspend (tRNS) Document Number: 002-00124 Rev. *H Comments The time from Suspend command until the WIP bit is 0. Is the time needed to issue the next Suspend command. Page 146 of 160 S25FL256L/S25FL128L 13. Ordering Information 13.1 Ordering Part Number The ordering part number is formed by a valid combination of the following: S25FL 256 L AG M F I 00 1 Packing Type 0 = Tray 1 = Tube 3 = 13” Tape and Reel Model Number (Additional Ordering Options) 00 = SOIC16 footprint (300 mil) 01 = SOIC8 (208 Mil) / 8-contact WSON footprint 02 = 5  5 ball BGA footprint 03 = 4  6 ball BGA footprint Temperature Range / Grade I = Industrial (–40°C to +85°C) V = Industrial Plus (–40°C to +105°C) A = Automotive, AEC-Q100 Grade 3 (–40°C to +85°C) B = Automotive, AEC-Q100 Grade 2 (–40°C to +105°C) M = Automotive, AEC-Q100 Grade 1 (–40°C to +125°C) Package Materials[115] F = Halogen-free, Lead (Pb)-free H = Halogen free, Lead (Pb)-free Package Type M = 16-pin SOIC / 8-Lead SOIC N = 8-contact WSON 6  8 mm / WSON 5  6 mm[114] B = 24-ball BGA 6  8 mm package, 1.00 mm pitch Speed AG = 133 MHz DP = 66 MHz DDR Device Technology L = 65 nm Floating Gate Process Technology Density 128 = 128 Mb 256 = 256 Mb Device Family S25FL Cypress Memory 3.0 Volt-only, SPI Flash Memory Note 114.WSON 6  8 mm is for S25FL256L only. WSON 5  6 mm is for S25FL128L only. 115.Halogen free definition is in accordance with IEC 61249-2-21 specification Document Number: 002-00124 Rev. *H Page 147 of 160 S25FL256L/S25FL128L Valid Combinations — Standard Valid Combinations list configurations planned to be supported in volume for this device. Contact your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. Table 66. Valid Combinations — Standard Valid Combinations — Standard Base Ordering Part Number S25FL128L S25FL256L Speed Option Package and Temperature Model Number Packing Type AG MFI, MFV 00 0, 1, 3 (Base) + A + (Temp) + F + (Model Number) AG MFI, MFV 01 0, 1, 3 (Base) + A + (Temp) + F + (Model Number) AG NFI, NFV 01 0, 1, 3 (Base) + A + (Temp) + F + (Model Number) AG BHI, BHV 02, 03 0, 3 (Base) + A + (Temp) + H + (Model Number) DP MFI, MFV 00 0, 1, 3 (Base) + D + (Temp) + F + (Model Number) DP MFI, MFV 01 0, 1, 3 (Base) + D + (Temp) + F + (Model Number) DP NFI, NFV 01 0, 1, 3 (Base) + D + (Temp) + F + (Model Number) DP BHI, BHV 02, 03 0, 3 (Base) + D + (Temp) + H + (Model Number) AG MFI, MFV 00 0, 1, 3 (Base) + A + (Temp) + F + (Model Number) Package Marking AG NFI, NFV 01 0, 1, 3 (Base) + A + (Temp) + F + (Model Number) AG BHI, BHV 02, 03 0, 3 (Base) + A + (Temp) + H + (Model Number) DP MFI, MFV 00 0, 1, 3 (Base) + D + (Temp) + F + (Model Number) DP NFI, NFV 01 0, 1, 3 (Base) + D + (Temp) + F + (Model Number) DP BHI, BHV 02, 03 0, 3 (Base) + D + (Temp) + H + (Model Number) Document Number: 002-00124 Rev. *H Page 148 of 160 S25FL256L/S25FL128L Valid Combinations — Automotive Grade / AEC-Q100 Table 67 lists configurations that are Automotive Grade / AEC-Q100 qualified and are planned to be available in volume. The table will be updated as new combinations are released. Contact your local sales representative to confirm availability of specific combinations and to check on newly released combinations. Production Part Approval Process (PPAP) support is only provided for AEC-Q100 grade products. Products to be used in end-use applications that require ISO/TS-16949 compliance must be AEC-Q100 grade products in combination with PPAP. Non–AEC-Q100 grade products are not manufactured or documented in full compliance with ISO/TS16949 requirements. AEC-Q100 grade products are also offered without PPAP support for end-use applications that do not require ISO/TS-16949 compliance. Table 67. Valid Combinations — Automotive Grade / AEC-Q100 Valid Combinations — Automotive Grade / AEC-Q100 Base Ordering Part Number S25FL128L S25FL256L Speed Option Package and Temperature Model Number Packing Type AG MFA, MFB, MFM 00 0, 1, 3 Package Marking (Base) + A + (Temp) + F + (Model Number) AG MFA, MFB, MFM 01 0, 1, 3 (Base) + A + (Temp) + F + (Model Number) AG NFA, NFB, NFM 01 0, 1, 3 (Base) + A + (Temp) + F + (Model Number) AG BHA, BHB, BHM 02, 03 0, 3 (Base) + A + (Temp) + H + (Model Number) DP MFA, MFB, MFM 00 0, 1, 3 (Base) + D + (Temp) + F + (Model Number) DP MFA, MFB, MFM 01 0, 1, 3 (Base) + D + (Temp) + F + (Model Number) DP NFA, NFB, NFM 01 0, 1, 3 (Base) + D + (Temp) + F + (Model Number) DP BHA, BHB, BHM 02, 03 0, 3 (Base) + D + (Temp) + H + (Model Number) AG MFA, MFB, MFM 00 0, 1, 3 (Base) + A + (Temp) + F + (Model Number) AG NFA, NFB, NFM 01 0, 1, 3 (Base) + A + (Temp) + F + (Model Number) AG BHA, BHB, BHM 02, 03 0, 3 (Base) + A + (Temp) + H + (Model Number) DP MFA, MFB, MFM 00 0, 1, 3 (Base) + D + (Temp) + F + (Model Number) DP NFA, NFB, NFM 01 0, 1, 3 (Base) + D + (Temp) + F + (Model Number) DP BHA, BHB, BHM 02, 03 0, 3 (Base) + D + (Temp) + H + (Model Number) Document Number: 002-00124 Rev. *H Page 149 of 160 S25FL256L/S25FL128L 14. Physical Diagrams 14.1 SOIC 16-Lead, 300-mil Body Width (SO3016) 0.20 C A-B 0.10 C D 2X 0.33 C 0.25 M C A-B D 0.10 C 0.10 C DIMENSIONS SYMBOL MIN. NOTES: NOM. MAX. 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2.65 2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE. D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H. 4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE PLASTIC BODY. 5. DATUMS A AND B TO BE DETERMINED AT DATUM H. 6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED PACKAGE LENGTH. 7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO 0.25 mm FROM THE LEAD TIP. 8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT A 2.35 - A1 0.10 - 0.30 A2 2.05 - 2.55 b 0.31 - 0.51 b1 c 0.27 - 0.48 0.20 - 0.33 c1 0.20 - 0.30 D 10.30 BSC E 10.30 BSC E1 7.50 BSC e L 1.27 BSC 0.40 - L1 1.40 REF L2 0.25 BSC 1.27 16 N h 0.25 - 0 0° - 8° 01 5° - 15° 02 0° - - Document Number: 002-00124 Rev. *H MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE LEAD FOOT. 9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1 IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED. 10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE SEATING PLANE. 0.75 Page 150 of 160 S25FL256L/S25FL128L 14.2 SOIC 8-Lead, 208 mil Body Width (SOC008) NOTES: DIMENSIONS SYMBOL NOM. MAX. 1.75 - 2.16 A1 0.05 - 0.25 A2 1.70 - 1.90 b 0.36 - 0.48 b1 0.33 - 0.46 c 0.19 - 0.24 c1 0.15 - 0.20 A MIN. D 5.28 BSC E 8.00 BSC E1 5.28 BSC e 1.27 BSC L - 0.51 L1 1.36 REF L2 0.25 BSC 0.76 8 N 0 0° - 8° 01 5° - 15° 02 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. 3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE. D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H. 4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF THE PLASTIC BODY. 5. DATUMS A AND B TO BE DETERMINED AT DATUM H. 6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED PACKAGE LENGTH. 7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO 0.25 mm FROM THE LEAD TIP. 8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE LEAD FOOT. 9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1 IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED. 10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE SEATING PLANE. 0-8° REF Document Number: 002-00124 Rev. *H Page 151 of 160 S25FL256L/S25FL128L 14.3 WSON 8-Contact 5 x 6 mm Leadless (WND008) NOTES: DIMENSIONS SYMBOL MIN. e MAX. 1.27 BSC. 8 N ND L NOM. 4 0.60 0.55 1. DIMENSIONING AND TOLERANCING CONFORMS TO ASME Y14.5M-1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. 4 DIMENSION "b" APPLIES TO METALLIZED TERMINAL AND IS MEASURED N IS THE TOTAL NUMBER OF TERMINALS. BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. IF THE TERMINAL HAS 0.65 THE OPTIONAL RADIUS ON THE OTHER END OF THE TERMINAL, THE b 0.35 0.40 0.45 D2 3.90 4.00 4.10 5 ND REFERS TO THE NUMBER OF TERMINALS ON D SIDE. E2 3.30 3.40 3.50 MAX. PACKAGE WARPAGE IS 0.05mm. PIN #1 ID ON TOP WILL BE LOCATED WITHIN THE INDICATED ZONE. DIMENSION "b" SHOULD NOT BE MEASURED IN THAT RADIUS AREA. D 5.00 BSC 6. 7. E 6.00 BSC 0.75 0.02 8 9 A A1 0.70 0.00 A3 0.20 REF K 0.20 MIN. Document Number: 002-00124 Rev. *H 0.80 0.05 MAXIMUM ALLOWABLE BURR IS 0.076mm IN ALL DIRECTIONS. BILATERAL COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK SLUG AS WELL AS THE TERMINALS. 10 A MAXIMUM 0.15mm PULL BACK (L1) MAY BE PRESENT. Page 152 of 160 S25FL256L/S25FL128L 14.4 WSON 8-Contact 6 x 8 mm Leadless (WNG008) NOTES: DIMENSIONS SYMBOL MIN. e MAX. 1.27 BSC. 8 N ND L NOM. 4 0.45 0.50 1. DIMENSIONING AND TOLERANCING CONFORMS TO ASME Y14.5M-1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. 4 DIMENSION "b" APPLIES TO METALLIZED TERMINAL AND IS MEASURED N IS THE TOTAL NUMBER OF TERMINALS. BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. IF THE TERMINAL HAS 0.55 THE OPTIONAL RADIUS ON THE OTHER END OF THE TERMINAL, THE b 0.35 0.40 0.45 D2 4.70 4.80 4.90 5 ND REFERS TO THE NUMBER OF TERMINALS ON D SIDE. E2 4.55 4.65 4.75 MAX. PACKAGE WARPAGE IS 0.05mm. PIN #1 ID ON TOP WILL BE LOCATED WITHIN THE INDICATED ZONE. DIMENSION "b" SHOULD NOT BE MEASURED IN THAT RADIUS AREA. D 6.00 BSC 6. 7. E 8.00 BSC 0.75 0.02 8 9 A A1 0.70 0.00 A3 0.20 REF K 0.20 MIN. Document Number: 002-00124 Rev. *H 0.80 0.05 MAXIMUM ALLOWABLE BURR IS 0.076mm IN ALL DIRECTIONS. BILATERAL COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK SLUG AS WELL AS THE TERMINALS. 10 A MAXIMUM 0.15mm PULL BACK (L1) MAY BE PRESENT. Page 153 of 160 S25FL256L/S25FL128L 14.5 Ball Grid Array 24-ball 6 x 8 mm (FAB024) NOTES: DIMENSIONS SYMBOL MIN. NOM. MAX. A - - 1.20 A1 0.20 - - 1. DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. 2. ALL DIMENSIONS ARE IN MILLIMETERS. 3. BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020. D 8.00 BSC E 6.00 BSC 4. e REPRESENTS THE SOLDER BALL GRID PITCH. D1 4.00 BSC 5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION. E1 4.00 BSC MD 5 ME 5 N SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION. N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME. 6 24 b 0.35 0.40 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 0.45 7 "SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE eE 1.00 BSC eD 1.00 BSC POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. SD 0.00 BSC WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0. SE 0.00 BSC WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND "SE" = eE/2. 8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 9. A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. Document Number: 002-00124 Rev. *H Page 154 of 160 S25FL256L/S25FL128L 14.6 Ball Grid Array 24-ball 6 x 8 mm (FAC024) NOTES: DIMENSIONS SYMBOL MIN. A - A1 0.25 NOM. MAX. 1. DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994. - 1.20 2. ALL DIMENSIONS ARE IN MILLIMETERS. - - 3. BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020. 4. e 5. SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION. 8.00 BSC D E 6.00 BSC D1 5.00 BSC E1 3.00 BSC MD 6 ME 4 N SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION. N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME. 6 24 b eE 0.35 0.40 1.00 BSC REPRESENTS THE SOLDER BALL GRID PITCH. DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 0.45 7 "SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. eD 1.00 BSC SD 0.50 BSC WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0. SE 0.50 BSC WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND "SE" = eE/2. 8. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 9. A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. Document Number: 002-00124 Rev. *H Page 155 of 160 S25FL256L/S25FL128L 15. Other Resources 15.1 Glossary BCD Binary Coded Decimal. A value in which each 4 bit nibble represents a decimal numeral. Command All information transferred between the host system and memory during one period while CS# is low. This includes the instruction (sometimes called an operation code or opcode) and any required address, mode bits, latency cycles, or data. DDP Dual Die Package = Two die stacked within the same package to increase the memory capacity of a single package. Often also referred to as a Multi-Chip Package (MCP). DDR Double Data Rate = When input and output are latched on every edge of SCK. Flash The name for a type of Electrical Erase Programmable Read Only Memory (EEPROM) that erases large blocks of memory bits in parallel, making the erase operation much faster than early EEPROM. High A signal voltage level ≥ VIH or a logic level representing a binary one (“1”). Instruction The 8 bit code indicating the function to be performed by a command (sometimes called an operation code or opcode). The instruction is always the first 8 bits transferred from host system to the memory in any command. Low A signal voltage level  VIL or a logic level representing a binary zero (“0”). LSb Least Significant bit, with the lowest order of magnitude value, within a group of bits of a register or data value. MSb Most Significant bit, with the highest order of magnitude value, within a group of bits of a register or data value. LSB Least Significant Byte. MSB Most Significant Byte N/A Not Applicable. A value is not relevant to situation described. Nonvolatile No power is needed to maintain data stored in the memory. OPN Ordering Part Number = The alphanumeric string specifying the memory device type, density, package, factory non-volatile configuration, etc. used to select the desired device. QPI Quad Peripheral Interface Page 256 Byte length and aligned group of data. PCB Printed Circuit Board Register Bit References In the format: Register_name[bit_number] or Register_name[bit_range_MSb: bit_range_LSb] Sector Erase unit size; depending on device model and sector location this may be 4KBytes, 32KBytes or 64KBytes SDR Single Data Rate = When input is latched on the rising edge and output on the falling edge of SCK. Write An operation that changes data within volatile or non-volatile registers bits or non-volatile Flash memory. When changing non-volatile data, an erase and reprogramming of any unchanged non-volatile data is done, as part of the operation, such that the non-volatile data is modified by the write operation, in the same way that volatile data is modified – as a single operation. The non-volatile data appears to the host system to be updated by the single write command, without the need for separate commands for erase and reprogram of adjacent, but unaffected data. Document Number: 002-00124 Rev. *H Page 156 of 160 S25FL256L/S25FL128L 15.2 Link to Cypress Flash Roadmap www.cypress.com/product-roadmaps/cypress-flash-memory-roadmap 15.3 Link to Software www.cypress.com/software-and-drivers-cypress-flash-memory 15.4 Link to Application Notes www.cypress.com/appnotes Document Number: 002-00124 Rev. *H Page 157 of 160 S25FL256L/S25FL128L 16. Document History Document Title: S25FL256L/S25FL128L, 256-Mb (32-MB)/128-Mb (16-MB), 3.0 V FL-L Flash Memory Document Number: 002-00124 Rev. ECN No. Orig. of Change Submission Date ** 4905743 BWHA 09/18/2015 Initial release. 02/22/2016 DC Characteristics – Industrial, Industrial Plus and Extended tables: changed ISB Max value SDR AC Characteristics table: changed Min values for tCH and tCL Embedded Algorithm Performance Tables: changed value for tPP Max Registers: added sentences; When volatile register bits are written, only the volatile version of the register has the appropriate bits updated. When either a non-volatile or volatile register is read, the volatile version of the register is delivered. Basic SPI Flash Parameter, JEDEC SFDP Rev B: changed 3Dh Data from 60h to 50h *A 5147318 BWHA Description of Change Restructured datasheet. Added S25FL128L related information in all instances across the document. Updated Section 9. Data Integrity on page 119: Updated Section 9.1 Erase Endurance on page 119: Updated Table 45. *B 5322980 BWHA 06/25/2016 Updated Section 9.2 Data Retention on page 119: Updated Table 46. Updated Section 11. Electrical Specifications on page 130: Added Section 11.3 Thermal Resistance on page 130. Updated Section 15. Other Resources on page 156. Added Section 15.2 Link to Cypress Flash Roadmap on page 157. Changed status from Advance to Final. Updated Features on page 1: Added Automotive Grade related information. Updated Section 9. Data Integrity on page 119. Updated Section 9.2 Data Retention on page 119. Updated Table 46. Updated Section 11. Electrical Specifications on page 130. Updated Section 11.3 Thermal Resistance on page 130. Updated Table 54. Updated Section 11.4 Operating Ranges on page 131. *C 5449210 ARVR 09/26/2016 Updated Section 11.4.2 Temperature Ranges on page 131: Added Automotive Grade related information. Updated Section 13. Ordering Information on page 147. Updated Section 13.1 Ordering Part Number on page 147. Updated details corresponding to “01” under “Model Number (Additional Ordering Options)”. Added Automotive Grade related information. Updated Section Valid Combinations — Standard on page 148. Added Section Valid Combinations — Automotive Grade / AEC-Q100 on page 149. Updated Section 14. Physical Diagrams on page 150. WSON 8-contact 6 x 8 mm Leadless (WNH008). Added Section 14.4 WSON 8-Contact 6 x 8 mm Leadless (WNG008) on page 153. *D 5548451 ARVR 01/11/2017 Document Number: 002-00124 Rev. *H Updated Sales information and Copyright. Updated links in Section 15. Other Resources on page 156. Page 158 of 160 S25FL256L/S25FL128L Document Title: S25FL256L/S25FL128L, 256-Mb (32-MB)/128-Mb (16-MB), 3.0 V FL-L Flash Memory Document Number: 002-00124 Rev. *E ECN No. 5677892 Orig. of Change ECAO Submission Date 05/15/2017 Description of Change Changed VDD to VCC. Added Table 37 on page 50 Updated SFDP parameter address byte 02h, Bit 22 description from “DOR” to “QOR” in Table 49 on page 122 Updated tSE value in Table 64 on page 146 Updated Package Material “F” option to “F = Halogen-free, Lead (Pb)-free” in Section 13.1 Ordering Part Number on page 147 Updated WSON 8-Contact 5 x 6 mm Leadless (WND008) on page 152 Updated WSON 8-Contact 6 x 8 mm Leadless (WNG008) on page 153 Updated Section Valid Combinations — Standard on page 148 for S25FL128L. Added Section Valid Combinations — Automotive Grade / AEC-Q100 on page 149 for S25FL128L. Updated package diagram for Section 14.1 SOIC 16-Lead, 300-mil Body Width (SO3016) on page 150 (spec 002-15547 Rev. ** to *A). Updated Cypress logo, Sales page, and Copyright information. Updated Section Features on page 1: Removed “S25FL256L”. Updated Table 53: Corrected Latchup Max Spec. *F 5846473 BWHA 08/07/2017 Updated Section 13.1 Ordering Part Number on page 147: Removed FL128L is not in production. Updated Table 66 and Table 67: Added SOIC 16 package for the FL128L. Updated Section 12.5.3 DDR Data Valid Timing using DLP on page 145: Updated Figure 22, Figure 23, Figure 74, Figure 75, and Figure 76. *G 6085424 BWHA 04/03/2018 Updated Table 52 on page 129. Updated Table 56 on page 134 - improved ICC and ISB current specifications. Updated Table 57 on page 135 - improved ICC and ISB current specifications. Updated Table 58 on page 136 - improved ICC and ISB current specifications. Updated Sales page. *H 6239780 BWHA 07/11/2018 Updated the Section 12.5.3 DDR Data Valid Timing using DLP on page 145 section. Changed Low-halogen to Halogen free in Section 13. Ordering Information on page 147 and added a Note” Halogen free definition is in accordance with IEC 61249-2-21 specification”. Added to Section 6.6 Registers on page 25 section “Special attention must be given when writing the non-volatile registers that there is a stable power supply with no disruption, this will guarantee the correct data is written to the register. “ Updated Section 15.1 Glossary on page 148 Definition of MSb & LSb. Document Number: 002-00124 Rev. *H Page 159 of 160 S25FL256L/S25FL128L Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC® Solutions Products Arm® Cortex® Microcontrollers Automotive cypress.com/arm cypress.com/automotive Clocks & Buffers Interface cypress.com/clocks cypress.com/interface Internet of Things Memory cypress.com/iot cypress.com/memory Microcontrollers cypress.com/mcu PSoC cypress.com/psoc Power Management ICs cypress.com/pmic Touch Sensing Cypress Developer Community Community | Projects | Video | Blogs | Training | Components Technical Support cypress.com/support cypress.com/touch USB Controllers Wireless Connectivity PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6 MCU cypress.com/usb cypress.com/wireless © Cypress Semiconductor Corporation, 2015-2018. This document is the property of Cypress Semiconductor Corporation and its subsidiaries, including Spansion LLC ("Cypress"). This document, including any software or firmware included or referenced in this document ("Software"), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress hereby grants you a personal, non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code form, to modify and reproduce the Software solely for use with Cypress hardware products, only internally within your organization, and (b) to distribute the Software in binary code form externally to end users (either directly or indirectly through resellers and distributors), solely for use on Cypress hardware product units, and (2) under those claims of Cypress's patents that are infringed by the Software (as provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. 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Cypress does not assume any liability arising out of the application or use of any product or circuit described in this document. Any information provided in this document, including any sample design information or programming code, is provided only for reference purposes. It is the responsibility of the user of this document to properly design, program, and test the functionality and safety of any application made of this information and any resulting product. Cypress products are not designed, intended, or authorized for use as critical components in systems designed or intended for the operation of weapons, weapons systems, nuclear installations, life-support devices or systems, other medical devices or systems (including resuscitation equipment and surgical implants), pollution control or hazardous substances management, or other uses where the failure of the device or system could cause personal injury, death, or property damage ("Unintended Uses"). A critical component is any component of a device or system whose failure to perform can be reasonably expected to cause the failure of the device or system, or to affect its safety or effectiveness. Cypress is not liable, in whole or in part, and you shall and hereby do release Cypress from any claim, damage, or other liability arising from or related to all Unintended Uses of Cypress products. You shall indemnify and hold Cypress harmless from and against all claims, costs, damages, and other liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products. Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners. Document Number: 002-00124 Rev. *H Revised July 11, 2018 Page 160 of 160
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