S25FL116K/S25FL132K/S25FL164K
16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/
64-Mbit (8 Mbyte), 3.0 V, SPI Flash Memory
This product family has been retired and is not recommended for designs. For new and current designs, S25FL064L supersede the
S25FL1-K family. These are the factory-recommended migration paths. Please refer to the S25FL-L Family datasheets for
specifications and ordering information.
Features
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Cypress Semiconductor Corporation
Document Number: 002-00497 Rev. *H
– 8-Byte Unique ID for each device
– Non-volatile Status Register bits control protection modes
– Software command protection
– Hardware input signal protection
– Lock-Down until power cycle protection
– OTP protection of security registers
90 nm Floating Gate Technology
Single Supply Voltage
– 2.7 V to 3.6 V (Industrial, Industrial Plus, and Extended
temperature range)
– 2.6 V to 3.6 V (Extended temperature range)
Temperature Ranges
– Industrial (40 °C to +85 °C)
– Industrial Plus (40 °C to +105 °C)
– Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)
– Automotive, AEC-Q100 Grade 2 (–40°C to +105°C))
Package Options
– S25FL116K
– 8-lead SOIC (150 mil) – SOA008
– 8-lead SOIC (208 mil) – SOC008
– 8-contact WSON 5 mm x 6 mm – WND008
– 24-ball BGA 6 mm 8 mm – FAB024 and FAC024
– KGD / KGW
– S25FL132K
– 8-lead SOIC (150 mil) – SOA008
– 8-lead SOIC (208 mil) – SOC008
– 8-contact USON 4 mm 4 mm – UNF008
– 8-contact WSON 5 mm 6 mm – WND008
– 24-ball BGA 6 mm 8 mm – FAB024 and FAC024
– KGD / KGW
– S25FL164K
– 8-lead SOIC (208 mil) – SOC008
– 16-lead SOIC (300 mil) – SO3016
– 8-contact WSON 5 mm 6 mm – WND008
– 24-ball BGA 6 mm 8 mm – FAB024 and FAC024
D
ed
Serial Peripheral Interface (SPI) with Multi-I/O
– SPI Clock polarity and phase modes 0 and 3
– Command subset and footprint compatible with S25FL-K
Read
– Normal Read (Serial):
– 50 MHz clock rate (40 °C to +85 °C/105 °C)
– Fast Read (Serial):
– 108 MHz clock rate (40 °C to +85 °C/105 °C)
– Dual Read:
– 108 MHz clock rate (40 °C to +85 °C/105 °C)
– Quad Read:
– 108 MHz clock rate (40 °C to +85 °C/105 °C)
– 54 MB/s maximum continuous data transfer rate
(40 °C to +85 °C/105 °C)
– Efficient Execute-In-Place (XIP)
– Continuous and wrapped read modes
– Serial Flash Discoverable Parameters (SFDP)
Program
– Serial-input Page Program (up to 256 bytes)
– Program Suspend and Resume
Erase
– Uniform sector erase (4 kB)
– Uniform block erase (64 kB)
– Chip erase
– Erase Suspend and Resume
Cycling Endurance
– 100K Program-Erase cycles, minimum
Data Retention
– 20-year data retention, minimum
Security
– Three 256-byte Security Registers with OTP protection
– Low supply voltage protection of the entire memory
– Pointer-based security protection feature (S25FL132K and
S25FL164K)
– Top / Bottom relative Block Protection Range, 4 kB to all of
memory
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised May 19, 2017
S25FL116K/S25FL132K/S25FL164K
Logic Block Diagram
X Decoders
CS#
SCK
SI/IO0
SO/IO1
Control
Logic
I/O
Memory
Y Decoders
Data Latch
WP#/IO2
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HOLD#/IO3
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Data Path
Maximum Read Rates (VCC = 2.7 V to 3.6 V, 85 °C/105 °C)
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Command
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Performance Summary
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Read
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Fast Read
Dual Read
Mbytes/s
50
6.25
108
13.5
108
27
108
54
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Quad Read
Clock Rate (MHz)
Typical Program and Erase Rates (VCC = 2.7 V to 3.6 V, 85 °C/105 °C)
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Operation
Page Programming (256-byte page buffer)
64-kbyte Sector Erase
365
ot
81
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4-kbyte Sector Erase
kbytes/s
131
Typical Current Consumption (VCC = 2.7 V to 3.6 V, 85 °C/105 °C)
Operation
Current (mA)
Serial Read 50 MHz
7
Serial Read 108 MHz
12
Dual Read 108 MHz
14
Quad Read 108 MHz
16
Program
20
Erase
20
Standby
0.015
Deep-Power Down
0.002
Document Number: 002-00497 Rev. *H
Page 2 of 90
S25FL116K/S25FL132K/S25FL164K
Contents
4.
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
Electrical Characteristics ..........................................
Absolute Maximum Ratings .........................................
Thermal Resistance .....................................................
Operating Ranges........................................................
DC Electrical Characteristics .......................................
AC Measurement Conditions .......................................
Power-Up Timing .........................................................
Power-On (Cold) Reset................................................
AC Electrical Characteristics........................................
5.
5.1
Physical Interface ...................................................... 29
Connection Diagrams .................................................. 29
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Document Number: 002-00497 Rev. *H
Functional Description ............................................... 60
SPI Operations ............................................................. 60
Write Protection ............................................................ 61
Status Registers ........................................................... 61
8.
8.1
8.2
8.3
8.4
8.5
8.6
Commands .................................................................. 62
Configuration and Status Commands ........................... 64
Program and Erase Commands ................................... 67
Read Commands .......................................................... 70
Reset Commands ......................................................... 75
ID and Security Commands .......................................... 77
Set Block / Pointer Protection (39h)
— S25FL132K and S25FL164K ................................... 81
9.
9.1
9.2
9.3
Data Integrity............................................................... 83
Erase Endurance .......................................................... 83
Data Retention .............................................................. 83
Initial Delivery State ...................................................... 83
10.
Ordering Information .................................................. 84
ed
12
12
12
16
19
19
7.
7.1
7.2
7.3
20
20
21
21
22
23
24
25
25
n
Signal Protocols.........................................................
SPI Clock Modes .........................................................
Command Protocol ......................................................
Interface States............................................................
Status Register Effects on the Interface ......................
Data Protection ............................................................
6.5
6.6
Address Space Maps.................................................. 38
Overview....................................................................... 38
Flash Memory Array...................................................... 38
Security Registers......................................................... 39
Security Register 0 — Serial Flash
Discoverable Parameters
(SFDP — JEDEC JESD216B) ...................................... 39
Status Registers ........................................................... 49
Device Identification...................................................... 59
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3.
3.1
3.2
3.3
3.4
3.5
6.
6.1
6.2
6.3
6.4
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Signal Descriptions ..................................................... 8
Input / Output Summary................................................. 8
Address and Data Configuration.................................... 9
Serial Clock (SCK) ......................................................... 9
Chip Select (CS#) .......................................................... 9
Serial Input (SI) / IO0 ..................................................... 9
Serial Output (SO) / IO1................................................. 9
Write Protect (WP#) / IO2 .............................................. 9
HOLD# / IO3 ................................................................ 10
Core and I/O Signal Voltage Supply (VCC) .................. 10
Supply and Signal Ground (VSS) ................................. 10
Not Connected (NC) .................................................... 10
Reserved for Future Use (RFU)................................... 10
Do Not Use (DNU) ....................................................... 11
Block Diagrams............................................................ 11
Physical Diagrams ........................................................ 31
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2.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2.10
2.11
2.12
2.13
2.14
5.2
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General Description.....................................................
Migration Notes..............................................................
Glossary.........................................................................
Other Resources............................................................
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5
6
7
1.
1.1
1.2
1.3
11. Revision History.......................................................... 87
Document History Page 87
Sales, Solutions, and Legal Information .......................... 90
Worldwide Sales and Design Support ........................... 90
Products ........................................................................ 90
PSoC® Solutions .......................................................... 90
Cypress Developer Community ..................................... 90
Technical Support ......................................................... 90
Page 3 of 90
S25FL116K/S25FL132K/S25FL164K
1.
General Description
The S25FL1-K of non-volatile flash memory devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI
single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O
or QIO) serial protocols. This multiple width interface is called SPI Multi-I/O or MIO.
The SPI-MIO protocols use only 4 to 6 signals:
Chip Select (CS#)
Serial Clock (SCK)
– IO0 (SI)
– IO1 (SO)
– IO2 (WP#)
– IO3 (HOLD#)
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Serial Data
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The SIO protocol uses Serial Input (SI) and Serial Output (SO) for data transfer. The DIO protocols use IO0 and IO1 to input or
output two bits of data in each clock cycle.
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The Write Protect (WP#) input signal option allows hardware control over data protection. Software controlled commands can also
manage data protection.
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The HOLD# input signal option allows commands to be suspended and resumed on any clock cycle.
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The QIO protocols use all of the data signals (IO0 to IO3) to transfer 4 bits in each clock cycle. When the QIO protocols are enabled
the WP# and HOLD# inputs and features are disabled.
Single bit data path = 13.5 Mbytes/s
Dual bit data path = 27 Mbytes/s
Quad bit data path = 54 Mbytes/s
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Clock frequency of up to 108 MHz is supported, allowing data transfer rates up to:
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The S25FL1-K:
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Executing code directly from flash memory is often called execute-In-Place or XIP. By using S25FL1-K devices at the higher clock
rates supported, with QIO commands, the command read transfer rate can match or exceed traditional x8 or x16 parallel interface,
asynchronous, NOR flash memories, while reducing signal count dramatically. The Continuous Read Mode allows for random
memory access with as few as 8-clocks of overhead for each access, providing efficient XIP operation. The Wrapped Read mode
provides efficient instruction or data cache refill via a fast read of the critical byte that causes a cache miss, followed by reading all
other bytes in the same cache line in a single read command.
Support JEDEC standard manufacturer and device type identification.
Program pages of 256 bytes each. One to 256 bytes can be programmed in each Page Program operation. Pages can be
erased in groups of 16 (4-kB aligned sector erase), groups of 256 (64-kB aligned block erase), or the entire chip (chip erase).
The S25FL1-K devices operate on a single 2.6V/2.7V to 3.6V power supply and all devices are offered in space-saving
packages.
Provides an ideal storage solution for systems with limited space, signal connections, and power. These memories offer
flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing
code directly (XIP), and storing reprogrammable data.
Document Number: 002-00497 Rev. *H
Page 4 of 90
S25FL116K/S25FL132K/S25FL164K
1.1
Migration Notes
1.1.1
Features Comparison
The S25FL1-K is command set and footprint compatible with prior generation FL-K and FL-P families.
Table 1. FL Generations Comparison
S25FL-K
S25FL-P
90 nm
90 nm
90 nm
Architecture
Floating Gate
Floating Gate
MirrorBit®
Release Date
In Production
In Production
In Production
16 Mbit - 64 Mbit
4 Mbit - 128 Mbit
32 Mbit - 256 Mbit
x1, x2, x4
x1, x2, x4
x1, x2, x4
Supply Voltage
2.6V / 2.7V - 3.6V
2.7V - 3.6V
2.7V - 3.6V
Normal Read Speed
6 MB/s (50 MHz)
6 MB/s (50 MHz)
5 MB/s (40 MHz)
Fast Read Speed
13.5 MB/s (108 MHz)
13 MB/s (104 MHz)
13 MB/s (104 MHz)
Dual Read Speed
27 MB/s (108 MHz)
26 MB/s (104 MHz)
20 MB/s (80 MHz)
Quad Read Speed
54 MB/s (108 MHz at 85°C/105°C)
52 MB/s (104 MHz)
40 MB/s (80 MHz)
256B
256B
700 µs (256B)
1500 µs (256B)
Yes
No
4 kB / 64 kB
4 kB / 32 kB / 64 kB
64 kB / 256 kB
N/A
N/A
4 kB
30 ms (4 kB), 150 ms (64 kB)
500 ms (64 kB)
Yes
Yes
No
768B (3 x 256B)
768B (3 x 256B)
506B
-40°C to +85°C / +105°C
-40°C to +85°C
-40°C to +85°C / +105°C
Page Programming Time
(typ.)
m
Parameter Sector Size
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Yes
Erase Sector Size
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50 ms (4 kB), 500 ms (64 kB)
Erase Suspend / Resume
R
OTP Size
Operating Temperature
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700 µs (256B)
Program Suspend / Resume
Sector Erase Time (typ.)
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256B
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Bus Width
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Density
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S25FL1-K
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Parameter
Technology Node
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Notes:
1. S25FL-K family devices can erase 4-kB sectors in groups of 32 kB or 64 kB.
2. S25FL1-K family devices can erase 4-kB sectors in groups of 64 kB.
3. S25FL-P has either 64-kB or 256-kB uniform sectors depending on an ordering option.
4. Refer to individual data sheets for further details.
1.1.2
1.1.2.1
Known Feature Differences from Prior Generations
Secure Silicon Region (OTP)
The size and format (address map) of the One Time Program area is the same for the S25FL1-K and the S25FL-K but different for
the S25FL-P.
Document Number: 002-00497 Rev. *H
Page 5 of 90
S25FL116K/S25FL132K/S25FL164K
1.1.2.2
Commands Not Supported
The following S25FL-K and S25FL-P commands are not supported:
Quad Page PGM (32h)
Half-Block Erase 32K (52h)
Word read Quad I/O (E7)
Octal Word Read Quad I/O (E3h)
MFID dual I/O (92h)
MFID quad I/O (94h)
Read Unique ID (4Bh)
1.1.2.3
New Features
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The S25FL1-K introduces new features to low density SPI category memories:
Variable read latency (number of dummy cycles) for faster initial access time or higher clock rate read commands
Industrial Plus and Extended temperature range
Volatile configuration option in addition to legacy non-volatile configuration
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Glossary
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1.2
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Command. All information transferred between the host system and memory during one period while CS# is low. This includes
the instruction (sometimes called an operation code or opcode) and any required address, mode bits, latency cycles, or data.
Flash. The name for a type of Electrical Erase Programmable Read Only Memory (EEPROM) that erases large blocks of
memory bits in parallel, making the erase operation much faster than early EEPROM.
High. A signal voltage level ≥ VIH or a logic level representing a binary one (1).
Instruction. The 8-bit code indicating the function to be performed by a command (sometimes called an operation code or
opcode). The instruction is always the first 8 bits transferred from host system to the memory in any command.
Low. A signal voltage level VIL or a logic level representing a binary zero (0).
LSB. Least Significant Bit. Generally the right most bit, with the lowest order of magnitude value, within a group of bits of a
register or data value.
MSB. Most Significant Bit. Generally the left most bit, with the highest order of magnitude value, within a group of bits of a
register or data value.
Non-Volatile. No power is needed to maintain data stored in the memory.
OPN. Ordering Part Number. The alphanumeric string specifying the memory device type, density, package, factory non-volatile
configuration, etc. used to select the desired device.
Page. 256-byte aligned and length group of data.
PCB. Printed Circuit Board.
Register Bit References. Are in the format: Register_name[bit_number] or Register_name[bit_range_MSB: bit_range_LSB].
Sector. Erase unit size; all sectors are physically 4-kbytes aligned and length. Depending on the erase command used, groups
of physical sectors may be erased as a larger logical sector of 64 kbytes.
Write. An operation that changes data within volatile or non-volatile registers bits or non-volatile flash memory. When changing
non-volatile data, an erase and reprogramming of any unchanged non-volatile data is done, as part of the operation, such that
the non-volatile data is modified by the write operation, in the same way that volatile data is modified – as a single operation.
The non-volatile data appears to the host system to be updated by the single write command, without the need for separate
commands for erase and reprogram of adjacent, but unaffected data.
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Document Number: 002-00497 Rev. *H
Page 6 of 90
S25FL116K/S25FL132K/S25FL164K
1.3
1.3.1
Other Resources
Cypress Flash Memory Roadmap
www.cypress.com/product-roadmaps/cypress-flash-memory-roadmap
1.3.2
Links to Software
www.cypress.com/software-and-drivers-cypress-flash-memory
1.3.3
Links to Application Notes
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www.cypress.com/cypressappnotes
Document Number: 002-00497 Rev. *H
Page 7 of 90
S25FL116K/S25FL132K/S25FL164K
Hardware Interface
Serial Peripheral Interface with Multiple Input / Output (SPI-MIO)
Many memory devices connect to their host system with separate parallel control, address, and data signals that require a large
number of signal connections and larger package size. The large number of connections increase power consumption due to so
many signals switching and the larger package increases cost.
The S25FL1-K reduces the number of signals for connection to the host system by serially transferring all control, address, and data
information over 4 to 6 signals. This reduces the cost of the memory package, reduces signal switching power, and either reduces
the host connection count or frees host connectors for use in providing other features.
The S25FL1-K uses the industry standard single bit Serial Peripheral Interface (SPI) and also supports commands for two bit (Dual)
and four bit (Quad) wide serial transfers. This multiple width interface is called SPI Multi-I/O or SPI-MIO.
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Input / Output Summary
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2.1
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2. Signal Descriptions
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Table 2. Signal List
Description
SCK
Input
Serial Clock.
CS#
Input
Chip Select.
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Type
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Signal Name
I/O
Serial Input for single bit data commands. IO0 for Dual or Quad commands.
I/O
Serial Output for single bit data commands. IO1 for Dual or Quad commands.
WP# (IO2)
I/O
Write Protect in single bit or Dual data commands. IO2 in Quad mode. The signal has an internal
pull-up resistor and may be left unconnected in the host system if not used for Quad commands.
HOLD# (IO3)
I/O
Hold (pause) serial transfer in single bit or Dual data commands. IO3 in Quad-I/O mode. The
signal has an internal pull-up resistor and may be left unconnected in the host system if not used
for Quad commands.
VCC
Supply
Core and I/O Power Supply.
VSS
Supply
Ground.
NC
Unused
Not Connected. No device internal signal is connected to the package connector nor is there
any future plan to use the connector for a signal. The connection may safely be used for routing
space for a signal on a Printed Circuit Board (PCB). However, any signal connected to an NC
must not have voltage levels higher than VCC.
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SI (IO0)
SO (IO1)
RFU
Reserved
Reserved for Future Use. No device internal signal is currently connected to the package
connector but there is potential future use of the connector for a signal. It is recommended to not
use RFU connectors for PCB routing channels so that the PCB may take advantage of future
enhanced features in compatible footprint devices.
DNU
Reserved
Do Not Use. Do not use these connections for PCB signal routing channels. Do not connect any
host system signal to this connection.
Note:
1. A signal name ending with the # symbol is active when low.
Document Number: 002-00497 Rev. *H
Page 8 of 90
S25FL116K/S25FL132K/S25FL164K
2.2
Address and Data Configuration
Traditional SPI single bit wide commands (Single or SIO) send information from the host to the memory only on the SI signal. Data
may be sent back to the host serially on the Serial Output (SO) signal.
Dual or Quad Output commands send information from the host to the memory only on the SI signal. Data will be returned to the
host as a sequence of bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Dual or Quad Input / Output (I/O) commands send information from the host to the memory as bit pairs on IO0 and IO1 or four bit
(nibble) groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or four bit (nibble) groups
on IO0, IO1, IO2, and IO3.
2.3
Serial Clock (SCK)
2.4
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This input signal provides the synchronization reference for the SPI interface. Instructions, addresses, or data input are latched on
the rising edge of the SCK signal. Data output changes after the falling edge of SCK.
Chip Select (CS#)
2.5
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The chip select signal indicates when a command for the device is in process and the other signals are relevant for the memory
device. When the CS# signal is at the logic high state, the device is not selected and all input signals are ignored and all output
signals are high impedance. Unless an internal Program, Erase or Write Status Registers embedded operation is in progress, the
device will be in the Standby Power mode. Driving the CS# input to logic low state enables the device, placing it in the Active Power
mode. After Power-Up, a falling edge on CS# is required prior to the start of any command.
Serial Input (SI) / IO0
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This input signal is used to transfer data serially into the device. It receives instructions, addresses, and data to be programmed.
Values are latched on the rising edge of serial SCK clock signal.
2.6
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SI becomes IO0 - an input and output during Dual and Quad commands for receiving instructions, addresses, and data to be
programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK).
Serial Output (SO) / IO1
R
This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of the serial SCK clock
signal.
N
ot
SO becomes IO1, an input and output during Dual and Quad commands for receiving instructions, addresses, and data to be
programmed (values latched on rising edge of serial SCK clock signal) as well as shifting out data (on the falling edge of SCK).
2.7
Write Protect (WP#) / IO2
When WP# is driven Low (VIL), while the Status Register Protect bits (SRP1 and SRP0) of the Status Registers (SR2[0] and SR1[7])
are set to 0 and 1 respectively, it is not possible to write to the Status Registers. This prevents any alteration of the Status Registers.
As a consequence, all the data bytes in the memory area that are protected by the Block Protect, TB, SEC, and CMP bits in the
status registers, are also hardware protected against data modification while WP# remains Low.
The WP# function is not available when the Quad mode is enabled (QE) in Status Register-2 (SR2[1]=1). The WP# function is
replaced by IO2 for input and output during Quad mode for receiving addresses, and data to be programmed (values are latched on
rising edge of the SCK signal) as well as shifting out data (on the falling edge of SCK).
WP# has an internal pull-up resistance; when unconnected, WP# is at VIH and may be left unconnected in the host system if not
used for Quad mode.
Document Number: 002-00497 Rev. *H
Page 9 of 90
S25FL116K/S25FL132K/S25FL164K
2.8
HOLD# / IO3
The HOLD# signal is used to pause any serial communications with the device without deselecting the device or stopping the serial
clock.
To enter the Hold condition, the device must be selected by driving the CS# input to the logic low state. It is required that the user
keep the CS# input low state during the entire duration of the Hold condition. This is to ensure that the state of the interface logic
remains unchanged from the moment of entering the Hold condition.
The Hold condition starts on the falling edge of the Hold (HOLD#) signal, provided that this coincides with SCK being at the logic low
state. If the falling edge does not coincide with the SCK signal being at the logic low state, the Hold condition starts whenever the
SCK signal reaches the logic low state. Taking the HOLD# signal to the logic low state does not terminate any Write, Program or
Erase operation that is currently in progress.
During the Hold condition, SO is in high impedance and both the SI and SCK input are Don't Care.
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The Hold condition ends on the rising edge of the Hold (HOLD#) signal, provided that this coincides with the SCK signal being at the
logic low state. If the rising edge does not coincide with the SCK signal being at the logic low state, the Hold condition ends
whenever the SCK signal reaches the logic low state.
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Figure 1. Hold Condition
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CS#
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SCK
HOLD#
Hold Condition
Standard Use
SI_or_IO_(during_input)
SO_or_IO_(external)
A
Don’t Care
Valid Input
B
B
C
B
C
Don’t Care
Valid Input
D
E
D
E
m
A
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Valid Input
SO_or_IO_(internal)
Core and I/O Signal Voltage Supply (VCC)
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2.9
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Hold Condition
Non-standard Use
R
VCC is the voltage source for all device internal logic and input / output signals. It is the single voltage used for all device functions
including read, program, and erase.
Supply and Signal Ground (VSS)
ot
2.10
N
VSS is the common voltage drain and ground reference for the device core, input signal receivers, and output drivers.
2.11
Not Connected (NC)
No device internal signal is connected to the package connector nor is there any future plan to use the connector for a signal. The
connection may safely be used for routing space for a signal on a Printed Circuit Board (PCB).
2.12
Reserved for Future Use (RFU)
No device internal signal is currently connected to the package connector but is there potential future use for the connector for a
signal. It is recommended to not use RFU connectors for PCB routing channels so that the PCB may take advantage of future
enhanced features in compatible footprint devices.
Document Number: 002-00497 Rev. *H
Page 10 of 90
S25FL116K/S25FL132K/S25FL164K
2.13
Do Not Use (DNU)
A device internal signal may be connected to the package connector. The connection may be used by Cypress for test or other
purposes and is not intended for connection to any host system signal. Any DNU signal related function will be inactive when the
signal is at VIL. The signal has an internal pull-down resistor and may be left unconnected in the host system or may be tied to VSS.
Do not use these connections for PCB signal routing channels. Do not connect any host system signal to these connections.
2.14
Block Diagrams
Figure 2. Bus Master and Memory Devices on the SPI Bus – Single Bit Data Path
HOLD#
HOLD#
WP#
SI
WP#
es
ig
SCK
SCK
CS2#
CS2#
D
CS1#
SPI
ew
CS1#
n
SI
SO
SO
SPI
Flash
SPI
Flash
fo
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Bus Master
en
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ed
Figure 3. Bus Master and Memory Devices on the SPI Bus – Dual Bit Data Path
HOLD#
HOLD#
WP#
IO1
IO0
m
WP#
IO1
SCK
ec
om
IO0
SCK
CS2#
CS2#
CS1#
R
CS1#
SPI
Flash
ot
SPI
Flash
N
SPI
Bus Master
Figure 4. Bus Master and Memory Devices on the SPI Bus – Quad Bit Data Path
IO3
IO3
IO2
IO2
IO1
IO0
IO1
IO0
SCK
SCK
CS2#
CS2#
CS1#
SPI
Bus Master
Document Number: 002-00497 Rev. *H
CS1#
SPI
Flash
SPI
Flash
Page 11 of 90
S25FL116K/S25FL132K/S25FL164K
3.
3.1
Signal Protocols
SPI Clock Modes
The S25FL1-K can be driven by an embedded microcontroller (bus master) in either of the two following clocking modes.
Mode 0 with Clock Polarity (CPOL) = 0 and, Clock Phase (CPHA) = 0
Mode 3 with CPOL = 1 and, CPHA = 1
For these two modes, input data into the device is always latched in on the rising edge of the SCK signal and the output data is
always available from the falling edge of the SCK clock signal.
The difference between the two modes is the clock polarity when the bus master is in standby mode and not transferring any data.
SCK will stay at logic low state with CPOL = 0, CPHA = 0
SCK will stay at logic high state with CPOL = 1, CPHA = 1
D
Figure 5. SPI Modes Supported
es
ig
n
ew
CPOL=0_CPHA=0_SCK
CPOL=1_CPHA=1_SCK
SI
rN
CS#
MSB
MSB
ed
fo
SO
m
en
d
Timing diagrams throughout the remainder of the document are generally shown as both mode 0 and 3 by showing SCK as both
high and low at the fall of CS#. In some cases a timing diagram may show only mode 0 with SCK low at the fall of CS#. In such a
case, mode 3 timing simply means clock is high at the fall of CS# so no SCK rising edge set up or hold time to the falling edge of
CS# is needed for mode 3.
Command Protocol
ot
3.2
R
ec
om
SCK cycles are measured (counted) from one falling edge of SCK to the next falling edge of SCK. In mode 0 the beginning of the
first SCK cycle in a command is measured from the falling edge of CS# to the first falling edge of SCK because SCK is already low
at the beginning of a command.
N
All communication between the host system and S25FL1-K memory devices is in the form of units called commands.
All commands begin with an instruction that selects the type of information transfer or device operation to be performed. Commands
may also have an address, instruction modifier (mode), latency period, data transfer to the memory, or data transfer from the
memory. All instruction, address, and data information is transferred serially between the host system and memory device.
All instructions are transferred from host to memory as a single bit serial sequence on the SI signal.
Single bit wide commands may provide an address or data sent only on the SI signal. Data may be sent back to the host serially on
the SO signal.
Dual or Quad Output commands provide an address sent to the memory only on the SI signal. Data will be returned to the host as a
sequence of bit pairs on IO0 and IO1 or four bit (nibble) groups on IO0, IO1, IO2, and IO3.
Dual or Quad Input / Output (I/O) commands provide an address sent from the host as bit pairs on IO0 and IO1 or, four bit (nibble)
groups on IO0, IO1, IO2, and IO3. Data is returned to the host similarly as bit pairs on IO0 and IO1 or, four bit (nibble) groups on IO0,
IO1, IO2, and IO3.
Document Number: 002-00497 Rev. *H
Page 12 of 90
S25FL116K/S25FL132K/S25FL164K
Commands are structured as follows:
Each command begins with CS# going low and ends with CS# returning high. The memory device is selected by the host
driving the Chip Select (CS#) signal low throughout a command.
The serial clock (SCK) marks the transfer of each bit or group of bits between the host and memory.
Each command begins with an eight bit (byte) instruction. The instruction is always presented only as a single bit serial
sequence on the Serial Input (SI) signal with one bit transferred to the memory device on each SCK rising edge. The instruction
selects the type of information transfer or device operation to be performed.
The instruction may be stand alone or may be followed by address bits to select a location within one of several address spaces
in the device. The instruction determines the address space used. The address is a 24-bit, byte boundary, address. The
address transfers occur on SCK rising edge.
The width of all transfers following the instruction are determined by the instruction sent. Following transfers may continue to be
single bit serial on only the SI or Serial Output (SO) signals, they may be done in 2-bit groups per (dual) transfer on the IO0 and
IO1 signals, or they may be done in 4-bit groups per (quad) transfer on the IO0-IO3 signals. Within the dual or quad groups the
least significant bit is on IO0. More significant bits are placed in significance order on each higher numbered IO signal. SIngle
bits or parallel bit groups are transferred in most to least significant bit order.
Some instructions send an instruction modifier called mode bits, following the address, to indicate that the next command will be
of the same type with an implied, rather than an explicit, instruction. The next command thus does not provide an instruction
byte, only a new address and mode bits. This reduces the time needed to send each command when the same command type
is repeated in a sequence of commands. The mode bit transfers occur on SCK rising edge.
The address or mode bits may be followed by write data to be stored in the memory device or by a read latency period before
read data is returned to the host.
Write data bit transfers occur on SCK rising edge.
SCK continues to toggle during any read access latency period. The latency may be zero to several SCK cycles (also referred
to as dummy cycles). At the end of the read latency cycles, the first read data bits are driven from the outputs on SCK falling
edge at the end of the last read latency cycle. The first read data bits are considered transferred to the host on the following
SCK rising edge. Each following transfer occurs on the next SCK rising edge.
If the command returns read data to the host, the device continues sending data transfers until the host takes the CS# signal
high. The CS# signal can be driven high after any transfer in the read data sequence. This will terminate the command.
At the end of a command that does not return data, the host drives the CS# input high. The CS# signal must go high after the
eighth bit, of a stand alone instruction or, of the last write data byte that is transferred. That is, the CS# signal must be driven
high when the number of clock cycles after CS# signal was driven low is an exact multiple of eight cycles. If the CS# signal does
not go high exactly at the eight SCK cycle boundary of the instruction or write data, the command is rejected and not executed.
All instruction, address, and mode bits are shifted into the device with the most significant bits (MSB) first. The data bits are
shifted in and out of the device MSB first. All data is transferred in byte units with the lowest address byte sent first. Following
bytes of data are sent in lowest to highest byte address order i.e. the byte address increments.
All attempts to read the flash memory array during a program, erase, or a write cycle (embedded operations) are ignored. The
embedded operation will continue to execute without any affect. A very limited set of commands are accepted during an
embedded operation. These are discussed in the individual command descriptions.
Depending on the command, the time for execution varies. A command to read status information from an executing command
is available to determine when the command completes execution and whether the command was successful.
N
ot
R
ec
om
m
en
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ed
fo
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es
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Document Number: 002-00497 Rev. *H
Page 13 of 90
S25FL116K/S25FL132K/S25FL164K
3.2.1
Command Sequence Examples
Figure 6. Stand Alone Instruction Command
CS#
SCK
SI
7
6
5
4
3
2
1
0
SO
Phase
Instruction
n
Figure 7. Single Bit Wide Input Command
es
ig
CS#
7
6
5
4
3
2
1
0
7
6
SO
Phase
5
4
ew
SI
D
SCK
2
1
0
Input Data
fo
rN
Instruction
3
ed
Figure 8. Single Bit Wide Output Command
SCK
7
6
5
4
3
1
0
ec
om
SO
2
m
SI
en
d
CS#
Phase
7
6
5
4
2
1
0
7
6
5
4
Data 1
3
2
1
0
Data 2
R
Instruction
3
ot
Figure 9. Single Bit Wide I/O Command without Latency
N
CS#
SCK
SI
7
6
5
4
3
2
1
0 23
1
0
SO
7
Phase
Instruction
Address
6
5
4
3
2
1
0
7
6
5
Data 1
4
3
2
1
0
2
1
0
Data 2
Figure 10. Single Bit Wide I/O Command with Latency
CS#
SCK
SI
7
6
5
4
3
2
1
0 23
1
0
SO
Phase
7
Instruction
Document Number: 002-00497 Rev. *H
Address
Dummy Cycles
6
5
4
3
Data 1
Page 14 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 11. Dual Output Command
CS#
SCK
IO0
7
6
5
4
3
2
1
0 23 22 21 0
IO1
Phase
Address
Instruction
6
4
2
0
6
4
2
0
7
5
3
1
7
5
3
1
Dummy
Data 1
Data 2
Figure 12. Quad Output Command without Latency
SCK
6
5
4
3
2
1
0
23
1
0
4
0
IO1
5
1
IO2
6
7
Phase
2
rN
IO3
4
Address
3
Data 1
0
0
4
0
4
0
4
1
5
1
5
1
5
1
5
6
2
6
2
6
2
6
2
6
7
3
7
3
7
3
7
3
7
Data 5
...
5
Data 2
Data 3
Data 4
ed
fo
Instruction
4
ew
7
D
IO0
es
ig
n
CS#
en
d
Figure 13. Dual I/O Command
CS#
7
6
5
4
3
2
IO1
Phase
0
22
2
0
6
4
2
0
6
4
2
0
23
3
1
7
5
3
1
7
5
3
1
Address
Dummy
Data 1
Data 2
ot
R
Instruction
1
ec
om
IO0
m
SCK
N
Figure 14. Quad I/O Command
CS#
SCK
IO0
20
4
0
4
4
0
4
0
4
0
4
0
IO1
21
5
1
5
5
1
5
1
5
1
5
1
IO2
22
6
2
6
6
2
6
2
6
2
6
2
IO3
23
7
3
7
7
3
7
3
7
3
7
3
Phase
7
6
5
4
3
Instruction
2
1
0
Address
Mode
Dummy
D1
D2
D3
D4
Additional sequence diagrams, specific to each command, are provided in Commands on page 62.
Document Number: 002-00497 Rev. *H
Page 15 of 90
S25FL116K/S25FL132K/S25FL164K
3.3
Interface States
This section describes the input and output signal levels as related to the SPI interface behavior.
Table 3. Interface States Summary
VCC
SCK
CS#
HOLD# /
IO3
WP# /
IO2
SO /
IO1
SI / IO0
< VWI
X
X
X
X
Z
X
Power-On (Cold) Reset
≥ VCC (min)
X
HH
X
X
Z
X
Interface Standby
≥ VCC (min)
X
X
X
X
Z
X
Interface State
≥ VCC (min)
HT
HL
HH
HV
Z
HV
≥ VCC (min)
HV or HT
HL
HL
X
X
X
Single Input Cycle
Host to Memory Transfer
≥ VCC (min)
HT
HL
HH
n
X
Z
HV
Single Latency (Dummy) Cycle
≥ VCC (min)
HT
HL
HH
X
Z
X
Single Output Cycle
Memory to Host Transfer
≥ VCC (min)
HT
HL
HH
X
MV
X
Dual Input Cycle
Host to Memory Transfer
≥ VCC (min)
HT
HL
HH
X
HV
HV
Dual Latency (Dummy) Cycle
≥ VCC (min)
HT
HL
HH
X
X
X
Dual Output Cycle
Memory to Host Transfer
≥ VCC (min)
HT
HL
HH
X
MV
MV
Quad Input Cycle
Host to Memory Transfer
≥ VCC (min)
HT
HL
HV
HV
HV
HV
Quad Latency (Dummy) Cycle
≥ VCC (min)
HT
HL
X
X
X
X
Quad Output Cycle
Memory to Host Transfer
≥ VCC (min)
HT
HL
MV
MV
MV
MV
D
rN
fo
ed
en
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R
ot
N
Legend:
Z
= no driver - floating signal
HL = Host driving VIL
HH = Host driving VIH
HV = either HL or HH
X
= HL or HH or Z
HT = toggling between HL and HH
ML = Memory driving VIL
MH = Memory driving VIH
MV = either ML or MH
es
ig
Instruction Cycle
Hold Cycle
ew
Low Power
Hardware Data Protection
3.3.1
Low Power Hardware Data Protection
When VCC is less than VWI the memory device will ignore commands to ensure that program and erase operations can not start
when the core supply voltage is out of the operating range.
3.3.2
Power-On (Cold) Reset
When the core voltage supply remains at or below the VCC (Low) voltage for > tPD time, then rises
to ≥ VWI the device will begin its Power-On-Reset (POR) process. POR continues until the end of tPUW. During tPUW the device does
not react to write commands. Following the end of tPUW the device transitions to the Interface Standby state and can accept write
commands. For additional information on POR see Power-On (Cold) Reset on page 25.
Document Number: 002-00497 Rev. *H
Page 16 of 90
S25FL116K/S25FL132K/S25FL164K
3.3.3
Interface Standby
When CS# is high the SPI interface is in standby state. Inputs are ignored. The interface waits for the beginning of a new command.
The next interface state is Instruction Cycle when CS# goes low to begin a new command.
While in interface standby state the memory device draws standby current (ISB) if no embedded algorithm is in progress. If an
embedded algorithm is in progress, the related current is drawn until the end of the algorithm when the entire device returns to
standby current draw.
3.3.4
Instruction Cycle
When the host drives the MSB of an instruction and CS# goes low, on the next rising edge of SCK the device captures the MSB of
the instruction that begins the new command. On each following rising edge of SCK the device captures the next lower significance
bit of the 8-bit instruction. The host keeps CS# low, HOLD# high, and drives Write Protect (WP#) signal as needed for the
instruction. However, WP# is only relevant during instruction cycles of a Write Status Registers command and is otherwise ignored.
es
ig
n
Each instruction selects the address space that is operated on and the transfer format used during the remainder of the command.
The transfer format may be Single, Dual output, Quad output, Dual I/O, or Quad I/O. The expected next interface state depends on
the instruction received.
Hold
rN
3.3.5
ew
D
Some commands are stand alone, needing no address or data transfer to or from the memory. The host returns CS# high after the
rising edge of SCK for the eighth bit of the instruction in such commands. The next interface state in this case is Interface Standby.
en
d
ed
fo
When Quad mode is not enabled (SR2[1]=0) the HOLD# / IO3 signal is used as the HOLD# input. The host keeps HOLD# low, SCK
may be at a valid level or continue toggling, and CS# is low. When HOLD# is low a command is paused, as though SCK were held
low. SI / IO0 and SO / IO1 ignore the input level when acting as inputs and are high impedance when acting as outputs during hold
state. Whether these signals are input or output depends on the command and the point in the command sequence when HOLD# is
asserted low.
Single Input Cycle — Host to Memory Transfer
ec
om
3.3.6
m
When HOLD# returns high the next state is the same state the interface was in just before HOLD# was asserted low.
R
Several commands transfer information after the instruction on the single serial input (SI) signal from host to the memory device. The
dual output, and quad output commands send address to the memory using only SI but return read data using the I/O signals. The
host keeps CS# low, HOLD# high, and drives SI as needed for the command. The memory does not drive the Serial Output (SO)
signal.
N
ot
The expected next interface state depends on the instruction. Some instructions continue sending address or data to the memory
using additional Single Input Cycles. Others may transition to Single Latency, or directly to Single, Dual, or Quad Output.
3.3.7
Single Latency (Dummy) Cycle
Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the instruction. During the latency cycles, the host keeps CS#
low, and HOLD# high. The Write Protect (WP#) signal is ignored. The host may drive the SI signal during these cycles or the host
may leave SI floating. The memory does not use any data driven on SI / I/O0 or other I/O signals during the latency cycles. In dual or
quad read commands, the host must stop driving the I/O signals on the falling edge at the end of the last latency cycle. It is
recommended that the host stop driving I/O signals during latency cycles so that there is sufficient time for the host drivers to turn off
before the memory begins to drive at the end of the latency cycles. This prevents driver conflict between host and memory when the
signal direction changes. The memory does not drive the Serial Output (SO) or I/O signals during the latency cycles.
The next interface state depends on the command structure i.e. the number of latency cycles, and whether the read is single, dual,
or quad width.
Document Number: 002-00497 Rev. *H
Page 17 of 90
S25FL116K/S25FL132K/S25FL164K
3.3.8
Single Output Cycle — Memory to Host Transfer
Several commands transfer information back to the host on the single Serial Output (SO) signal. The host keeps CS# low, and
HOLD# high. The Write Protect (WP#) signal is ignored. The memory ignores the Serial Input (SI) signal. The memory drives SO
with data.
The next interface state continues to be Single Output Cycle until the host returns CS# to high ending the command.
3.3.9
Dual Input Cycle — Host to Memory Transfer
The Read Dual I/O command transfers two address or mode bits to the memory in each cycle. The host keeps CS# low, HOLD#
high. The Write Protect (WP#) signal is ignored. The host drives address on SI / IO0 and SO / IO1.
The next interface state following the delivery of address and mode bits is a Dual Latency Cycle if there are latency cycles needed or
Dual Output Cycle if no latency is required.
n
Dual Latency (Dummy) Cycle
es
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3.3.10
fo
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ew
D
Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the instruction. During the latency cycles, the host keeps CS#
low, and HOLD# high. The Write Protect (WP#) signal is ignored. The host may drive the SI / IO0 and SO / IO1 signals during these
cycles or the host may leave
SI / IO0 and SO / IO1 floating. The memory does not use any data driven on SI / IO0 and SO / IO1 during the latency cycles. The
host must stop driving SI / IO0 and SO / IO1 on the falling edge at the end of the last latency cycle. It is recommended that the host
stop driving them during all latency cycles so that there is sufficient time for the host drivers to turn off before the memory begins to
drive at the end of the latency cycles. This prevents driver conflict between host and memory when the signal direction changes. The
memory does not drive the SI / IO0 and SO / IO1 signals during the latency cycles.
3.3.11
en
d
ed
The next interface state following the last latency cycle is a Dual Output Cycle.
Dual Output Cycle — Memory to Host Transfer
ec
om
m
The Read Dual Output and Read Dual I/O return data to the host two bits in each cycle. The host keeps CS# low, and HOLD# high.
The Write Protect (WP#) signal is ignored. The memory drives data on the SI / IO0 and SO / IO1 signals during the dual output
cycles.
Quad Input Cycle — Host to Memory Transfer
ot
3.3.12
R
The next interface state continues to be Dual Output Cycle until the host returns CS# to high ending the command.
N
The Read Quad I/O command transfers four address, mode, or data bits to the memory in each cycle. The host keeps CS# low, and
drives the IO signals.
For Read Quad I/O the next interface state following the delivery of address and mode bits is a Quad Latency Cycle if there are
latency cycles needed or Quad Output Cycle if no latency is required.
3.3.13
Quad Latency (Dummy) Cycle
Read commands may have zero to several latency cycles during which read data is read from the main flash memory array before
transfer to the host. The number of latency cycles are determined by the Latency Control in the Status Register-3 (SR3[3:0]). During
the latency cycles, the host keeps CS# low. The host may drive the IO signals during these cycles or the host may leave the IO
floating. The memory does not use any data driven on IO during the latency cycles. The host must stop driving the IO signals on the
falling edge at the end of the last latency cycle. It is recommended that the host stop driving them during all latency cycles so that
there is sufficient time for the host drivers to turn off before the memory begins to drive at the end of the latency cycles. This prevents
driver conflict between host and memory when the signal direction changes. The memory does not drive the IO signals during the
latency cycles.
The next interface state following the last latency cycle is a Quad Output Cycle.
Document Number: 002-00497 Rev. *H
Page 18 of 90
S25FL116K/S25FL132K/S25FL164K
3.3.14
Quad Output Cycle — Memory to Host Transfer
The Read Quad Output and Read Quad I/O return data to the host four bits in each cycle. The host keeps CS# low. The memory
drives data on IO0-IO3 signals during the Quad output cycles.
The next interface state continues to be Quad Output Cycle until the host returns CS# to high ending the command.
3.4
Status Register Effects on the Interface
The Status Register-2, bit 1 (SR2[1]), selects whether Quad mode is enabled to ignore HOLD# and WP# and allow Read Quad
Output, and Read Quad I/O commands.
3.5
Data Protection
3.5.1
es
ig
n
Some basic protection against unintended changes to stored data are provided and controlled purely by the hardware design. These
are described below. Other software managed protection methods are discussed in the software section of this document.
Low Power
Power-Up
rN
3.5.2
ew
D
When VCC is less than VWI the memory device will ignore commands to ensure that program and erase operations can not start
when the core supply voltage is out of the operating range.
Deep Power-Down (DPD)
en
d
3.5.3
ed
fo
Program and erase operations continue to be prevented during the Power-Up to Write delay (tPUW) because no write command is
accepted until after tPUW.
3.5.4
ec
om
m
In DPD mode the device responds only to the Resume from DPD command (RES ABh). All other commands are ignored during
DPD mode, thereby protecting the memory from program and erase operations.
Clock Pulse Count
N
ot
R
The device verifies that all program, erase, and Write Status Registers commands consist of a clock pulse count that is a multiple of
eight before executing them. A command not having a multiple of 8 clock pulse count is ignored and no error status is set for the
command.
Document Number: 002-00497 Rev. *H
Page 19 of 90
S25FL116K/S25FL132K/S25FL164K
4.
4.1
Electrical Characteristics
Absolute Maximum Ratings
Table 4. Absolute Maximum Ratings
Parameters (1)
Symbol
Supply Voltage
VCC
Voltage Applied to any Pin
VIO
Transient Voltage on any Pin
VIOT
Conditions
Range
Unit
–0.6 to +4.0
V
Relative to Ground
–0.6 to +4.0
V
< 20 ns Transient Relative to Ground
–2.0 to 6.0
V
TSTG
–65 to +150
°C
TLEAD
(2)
°C
Electrostatic Discharge Voltage
VESD
–2000 to +2000
V
es
ig
Human Body Model (3)
n
Storage Temperature
Lead Temperature
D
Notes:
1. This device has been designed and tested for the specified operation ranges. Proper operation outside of these levels is not guaranteed. Exposure to absolute
maximum ratings may affect device reliability. Exposure beyond absolute maximum ratings may cause permanent damage.
ew
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and the European directive on restrictions on hazardous substances
(RoHS) 2002/95/EU.
Input Signal Overshoot
fo
4.1.1
rN
3. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 ohms, R2=500 ohms).
en
d
ed
During DC conditions, input or I/O signals should remain equal to or between VSS and VCC. During voltage transitions, inputs or I/Os
may overshoot VSS to negative VIOT or overshoot to positive VIOT, for periods up to 20 ns.
m
Figure 15. Maximum Negative Overshoot Waveform
< 20 ns
ec
om
ot
R
VIL
VIOT
< 20 ns
N
< 20 ns
Figure 16. Maximum Positive Overshoot Waveform
< 20 ns
VIOT
VIH
< 20 ns
Document Number: 002-00497 Rev. *H
< 20 ns
Page 20 of 90
S25FL116K/S25FL132K/S25FL164K
4.1.2
Latchup Characteristics
Table 5. Latchup Specification
Min
Max
Unit
Input voltage with respect to VSS on all input only connections
Description
–1.0
VCC + 1.0
V
Input voltage with respect to VSS on all I/O connections
–1.0
VCC + 1.0
V
VCC Current
–100
+100
mA
Note:
1. Excludes power supply VCC. Test conditions: VCC = 3.0V, one connection at a time tested, connections not being tested are at VSS.
n
Thermal Resistance
SOA008
SOC008
FAB024
Thermal resistance
(junction to ambient)
75
75
D
Parameter
FAC024
WSON
Unit
39
18
°C/W
39
fo
rN
Theta JA
Description
ew
Table 6. Thermal Resistance
es
ig
4.2
Operating Ranges
ed
4.3
en
d
Operating ranges define those limits between which functionality of the device is guaranteed.
ec
om
m
Table 7. Operating Ranges
Parameter
Symbol
TA
R
Ambient Temperature
ot
VCC
Spec
Min
Max
Industrial
-40
+85
Industrial Plus
-40
+105
Industrial and Industrial Plus Temp
2.7
3.6
Unit
°C
V
N
Supply Voltage
Conditions
Note:
1. VCC voltage during read can operate across the min and max range but should not exceed ± 10% of the voltage used during programming or erase of the data being
read.
Document Number: 002-00497 Rev. *H
Page 21 of 90
S25FL116K/S25FL132K/S25FL164K
4.4
DC Electrical Characteristics
Table 8. DC Electrical Characteristics
Parameter
Symbol
Conditions
Min
Max
Typ
-40 to 85°C
-40 to 105°C
Unit
ILI
±2
µA
I/O Leakage
ILO
±2
µA
Standby Current
ICC1
CS# = VCC, VIN =
GND or VCC
15
25
25
µA
Deep Power-Down Current
(S25FL116K)
ICC2
CS# = VCC, VIN =
GND or VCC
2
5
5
µA
Deep Power-Down Current
(S25FL132K / S25FL164K)
ICC2
CS# = VCC, VIN =
GND or VCC
2
8
10
µA
Current: Read Single / Dual /
Quad 1 MHz (4.4.1)
ICC3
SCK = 0.1 VCC /
0.9 VCC
SO = Open
4/5/6
6 / 7.5 / 9
6 / 7.5 / 9
mA
Current: Read Single / Dual /
Quad 33 MHz (4.4.1)
ICC3
SCK = 0.1 VCC /
0.9 VCC
SO = Open
6/7/8
9 / 10.5 / 12
9 / 10.5 / 12
mA
Current: Read Single / Dual /
Quad 50 MHz (4.4.1)
ICC3
SCK = 0.1 VCC /
0.9 VCC
SO = Open
7/8/9
10 / 12 / 13.5
10 / 12 / 13.5
mA
Current: Read Single / Dual /
Quad 108 MHz (4.4.1)
ICC3
SCK = 0.1 VCC /
0.9 VCC
SO = Open
12 / 14 /
16
18 / 22 / 25
18 / 22 / 25
mA
ICC4
CS# = VCC
8
12
12
mA
Current Page Program
ICC5
CS# = VCC
20
25
25
mA
Current Sector / Block Erase
ICC6
CS# = VCC
20
25
25
mA
Current Chip Erase
ICC7
CS# = VCC
20
25
25
mA
Input Low Voltage (S25FL116K)
VIL
-0.5
VCC x 0.2
VCC x 0.2
V
-0.5
VCC x 0.3
VCC x 0.3
V
ec
om
ot
Input High Voltage
VIL
N
Input Low Voltage
(S25FL132K / S25FL164K)
m
Current: Write Status Registers
R
en
d
ed
fo
rN
ew
D
es
ig
n
Input Leakage
VCC x 0.7
VCC + 0.4
VCC + 0.4
V
IOL = 100 µA
VSS
0.2
0.2
V
IOL = 1.6 mA
VSS
0.4
0.4
VCC – 0.2
VCC
VCC
VIH
Output Low Voltage
VOL
Output High Voltage
VOH
IOH = –100 µA
V
Notes:
1. Tested on sample basis and specified through design and characterization data. TA = 25°C, VCC = 3V.
4.4.1
Active Power and Standby Power Modes
The device is enabled and in the Active Power mode when Chip Select (CS#) is Low. When CS# is high, the device is disabled, but
may still be in an Active Power mode until all program, erase, and write operations have completed. The device then goes into the
Standby Power mode, and power consumption drops to ISB.
Document Number: 002-00497 Rev. *H
Page 22 of 90
S25FL116K/S25FL132K/S25FL164K
4.5
AC Measurement Conditions
Figure 17. Test Setup
Device
Under
Test
CL
Table 9. AC Measurement Conditions
CL
Load Capacitance
TR, TF
Input Rise and Fall
Times
Min
Max
Unit
30
pF
n
Parameter
es
ig
Symbol
2.4
ns
0.2 x VCC to 0.8 VCC
V
Input Timing Ref Voltage
0.5 VCC
V
0.5 VCC
V
ew
D
Input Pulse Voltage
rN
Output Timing Ref
Voltage
ed
2. Input slew rate: 1.5 V/ns.
fo
Notes:
1. Output High-Z is defined as the point where data is no longer driven.
en
d
3. AC characteristics tables assume clock and data signals have the same slew rate (slope).
m
Figure 18. Input, Output, and Timing Reference Levels
ec
om
Input Levels
VCC + 0.4V
VCC
VCC - 0.2V
Timing Reference Level
ot
0.5 x VCC
R
0.7 x VCC
Output Levels
0.3 x VCC
N
0.2V to 0.4V
- 0.5V
4.5.1
VSS
Capacitance Characteristics
Table 10. Capacitance
Parameter
Test Conditions
Max
Unit
CIN
Input Capacitance (applies to SCK, CS#)
1 MHz
Min
8
pF
COUT
Output Capacitance (applies to All I/O)
1 MHz
8
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
Document Number: 002-00497 Rev. *H
Page 23 of 90
S25FL116K/S25FL132K/S25FL164K
4.6
Power-Up Timing
Table 11. Power-Up Timing and Voltage Levels
Parameter
Spec
Symbol
Min
Max
Unit
VCC (min) to CS# Low
tVSL
10
µs
Power-Up to Write — Time Delay Before Write Command
tPUW
10
ms
Write Inhibit Threshold Voltage
VWI
2.4
V
tPD
10.0
µs
VCC Low
1.0
V
Power-Down Time
VCC Power-Down Reset Threshold Voltage
es
ig
n
Note:
1. These parameters are characterized only.
D
Figure 19. Power-Up Timing and Voltage Levels
ew
VCC
VCC (max)
fo
VCC (min)
rN
Program, Erase, and Write instructions are ignored
CS# must track VCC
t VSL
Read instructions
allowed
Device is fully
accessible
t PUW
ec
om
m
en
d
VWI
ed
Reset
State
Figure 20. Power-Down and Voltage Drop
N
Vcc
ot
R
Time
Vcc
(Max)
No Device Access Allowed
Vcc
(Min)
tVSL
Device Read
Allowed
Vcc
(Low)
tPD
Time
Document Number: 002-00497 Rev. *H
Page 24 of 90
S25FL116K/S25FL132K/S25FL164K
4.7
Power-On (Cold) Reset
The device executes a Power-On Reset (POR) process until a time delay of tPUW has elapsed after the moment that VCC rises
above the VWI threshold. See Figure 19 on page 24, Figure 20 on page 24, and Table on page 24. The device must not be selected
(CS# to go high with VCC) until after (tVSL), i.e. no commands may be sent to the device until the end of tVSL.
4.8
AC Electrical Characteristics
Table 12. AC Electrical Characteristics: –40°C to +85°C/105°C at 2.7V to 3.6V
Symbol
Alt
Clock frequency for all SPI commands except for
Read Data command (03h) and Fast Read
command (0Bh)
2.7 V - 3.6V VCC
FR
fC
Clock frequency for Read Data command (03h)
fR
Clock frequency for all Fast Read commands SIO
and MIO
fFR
Spec
Min
Typ
D.C.
Max
Unit
108
MHz
D.C.
50
MHz
D.C.
108
MHz
D
ew
PSCK
tCLH, tCLL (1)
Clock High, Low Time for fFR
9.25
ns
tCH, tCL
3.3
ns
tCH, tCL
rN
Clock Period
es
ig
n
Description
tCLH, tCLL (1)
4.3
ns
Clock High, Low Time for fR
tCRLH, tCRLL (1)
tCH, tCL
6
ns
Clock Rise Time
tCLCH (2)
tCRT
0.1
V/ns
Clock Fall Time
tCHCL (2)
tCFT
0.1
V/ns
tSLCH
tCSS
5
ns
tCHSL
tCSH
5
ns
tDVCH
tSU
2
ns
tCHDX
tHD
5
ns
tCHSH
tCSS
5
ns
tSHCH
tCSH
5
ns
tCS
10
ns
7
ns
en
d
ed
fo
Clock High, Low Time for FR
Data In Hold Time
CS# Active Hold Time relative to SCK
ec
om
Data In Setup Time
m
CS# Active Setup Time relative to SCK
CS# Not Active Hold Time relative to SCK
CS# High Time
ot
R
CS# Not Active Setup Time relative to SCK
tSHSL1
tCS1
CS# Deselect Time (for Erase or Program -> Read
Status Registers)
tSHSL2
tCS2
N
CS# Deselect Time (for Array Read -> Array Read)
Volatile Status Register Write Time
CS# Deselect Time (for Erase or Program ->
Suspend command)
Output Disable Time
40
ns
40
tSHSL3
tCS3
130
ns
tSHQZ (2)
tDIS
7
ns
Clock Low to Output Valid, 30 pF, 2.7V - 3.6V
tCLQV1
tV1
7
ns
Clock Low to Output Valid, 15 pF, 2.7V - 3.6V
tCLQV1
tV1
6
ns
Clock Low to Output Valid (for Read ID commands)
2.7V - 3.6V
tCLQV2
tV2
8.5
ns
Output Hold Time
tCLQX
tHO
HOLD# Active Setup Time relative to SCK
2
ns
tHLCH
5
ns
HOLD# Active Hold Time relative to SCK
tCHHH
5
ns
HOLD# Not Active Setup Time relative to SCK
tHHCH
5
ns
Document Number: 002-00497 Rev. *H
Page 25 of 90
S25FL116K/S25FL132K/S25FL164K
Table 12. AC Electrical Characteristics: –40°C to +85°C/105°C at 2.7V to 3.6V (Continued)
Description
Symbol
HOLD# Not Active Hold Time relative to SCK
Alt
tCHHL
Typ
Unit
Max
5
tHHQX (2)
HOLD# to Output Low-Z
Spec
Min
ns
tLZ
7
ns
12
ns
HOLD# to Output High-Z
tHLQZ (2)
tHZ
Write Protect Setup Time Before CS# Low
tWHSL (3)
tWPS
20
ns
Write Protect Hold Time After CS# High
tSHWL (3)
tWPH
100
ns
3
µs
CS# High to Standby Mode without Electronic
Signature Read
tRES1 (2)
3
µs
CS# High to Standby Mode with Electronic
Signature Read
tRES2 (2)
1.8
µs
CS# High to next Command after Suspend
tSUS (2)
20
µs
2
30 (6)
ms
15
50
µs
2.5
12
µs
0.7
3
ms
50
450
ms
500
2000
ms
tBP2
tPP
Sector Erase Time (4 kB) (5)
tSE
Block Erase Time (64 kB) (5)
tBE2
Chip Erase Time 16 Mb / 32 Mb / 64 Mb (5)
tCE
s
es
ig
tRCH (2)
40
ns
tRST (2)
1.5
µs
ec
om
m
CE# High to next Instruction after Reset
11.2 / 32 / 64 64 / 128 / 256
en
d
End of Reset Instruction to CE# High
ed
Page Program Time (105°C) (5)
ew
tBP1
Additional Byte Program Time (After First Byte)
(4)(5)
rN
Byte Program Time (First Byte) (4)(5)
D
tW
fo
Write Status Registers Time
n
tDP (2)
CS# High to Power-down Mode
Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and / or characterization, not 100% tested in production.
R
3. Only applicable as a constraint for a Write Status Registers command when Status Register Protect 0 (SRP0) bit is set to 1. Or WPSEL bit = 1.
ot
4. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N = number of bytes programmed.
5. All program and erase times are tested using a random data pattern.
N
6. For 10K Cycles. 85 ms at 100K cycles.
4.8.1
Clock Timing
Figure 21. Clock Timing
PSCK
tCH
VIH min
VCC / 2
VIL max
tCRT
tCFT
tCL
Document Number: 002-00497 Rev. *H
Page 26 of 90
S25FL116K/S25FL132K/S25FL164K
4.8.2
Input / Output Timing
Figure 22. SPI Single Bit Input Timing
tCS
CS#
tCSH
tCSH
tCSS
tCSS
SCK
tSU
tHD
LSB IN
es
ig
MSB IN
n
SI
D
SO
rN
ew
Figure 23. SPI Single Bit Output Timing
fo
CS#
tCS
ed
SCK
en
d
SI
tLZ
tHO
SO
tV
tDIS
LSB OUT
ec
om
m
MSB OUT
R
Figure 24. SPI MIO Timing
ot
N
CS#
tCS
tCSH
tCSS
tCSS
tCSH
SCK
tSU
tHD
IO
MSB IN
Document Number: 002-00497 Rev. *H
tLZ
LSB IN
MSB OUT
tHO
tV
tDIS
LSB OUT
Page 27 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 25. Hold Timing
CS#
SCK
tHLCH
tHHCH
tCHHL
tHLCH
tCHHH
tHHCH
tCHHL
tCHHH
HOLD#
Hold Condition
Standard Use
Hold Condition
Non-standard Use
SI_or_IO_(during_input)
tHZ
SO_or_IO_(during_output)
B
tHZ
B
tLZ
C
D
E
D
Figure 26. WP# Input Timing
es
ig
n
A
tLZ
ew
CS#
tWPH
rN
tWPS
fo
WP#
SI
7
6
5
3
2
1
0
7
en
d
SO
4
ed
SCK
Phase
5
4
3
2
1
0
Input Data
ec
om
m
Write Status Registers Instruction
6
tCS2
tRST
N
ot
R
Figure 27. Software Reset Input Timing
CS#
SCK
tRCH
SI
7 6 5 4 3 2 1 0
7 6 5 4 3 2 1 0
Software Reset Enable Inst. (66h)
Software Reset Instruction (99h)
SO
Phase
Document Number: 002-00497 Rev. *H
Reset to Next Instr.
Page 28 of 90
S25FL116K/S25FL132K/S25FL164K
5.
5.1
5.1.1
Physical Interface
Connection Diagrams
SOIC 8
Figure 28. 8-Pin Plastic Small Outline Package (SO)
1
8
VCC
SO/IO1
2
7
HOLD#/IO3
WP#/IO2
3
6
SCK
4
5
SI/IO0
SOIC 16 — S25FL164K
es
ig
rN
5.1.2
ew
D
VSS
n
CS#
fo
Figure 29. 16-Pin Plastic Small Outline Package (SO)
1
16
SCK
VCC
2
15
SI/IO0
DNU
3
14
DNU
DNU
4
13
DNU
DNU
5
12
DNU
DNU
6
11
DNU
CS#
7
10
VSS
SO/IO1
8
9
N
ot
R
ec
om
m
en
d
ed
HOLD#/IO3
5.1.3
WP#/IO2
WSON 8
Figure 30. 8-Contact WSON (5 mm x 6 mm) Package / 8-Contact USON (4 mm x 4 mm) Package
CS#
1
SO/IO1
2
8
VCC
7
HOLD#/IO3
WSON
Document Number: 002-00497 Rev. *H
WP#/IO2
3
6
SCK
VSS
4
5
SI/IO0
Page 29 of 90
S25FL116K/S25FL132K/S25FL164K
5.1.4
FAB024 24-Ball BGA
Figure 31. 24-Ball BGA Package, 5x5 Ball Configuration, Top View
2
3
4
5
NC
NC
RFU
NC
DNU
SCK
VSS
VCC
NC
DNU
CS#
RFU
WP#/IO2
NC
DNU
SO/IO1
NC
NC
1
A
B
C
E
NC
D
RFU
FAC024 24-Ball BGA Package
fo
5.1.5
rN
ew
NC
es
ig
SI/IO0 HOLD#/IO3 NC
n
D
A
2
3
4
NC
NC
RFU
DNU
SCK
VSS
VCC
DNU
CS#
RFU
WP#/IO2
DNU
SO/IO1
NC
NC
NC
RFU
NC
NC
NC
NC
en
d
1
ed
Figure 32. 24-Ball BGA Package, 6x4 Ball Configuration, Top View
m
NC
ec
om
B
D
N
ot
R
C
SI/IO0 HOLD#/IO3
E
F
Note:
1. Signal connections are in the same relative positions as FAB024 BGA, allowing a single PCB footprint to use either package.
5.1.6
Special Handling Instructions for FBGA Packages
Flash memory devices in BGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and / or data
integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time.
Document Number: 002-00497 Rev. *H
Page 30 of 90
S25FL116K/S25FL132K/S25FL164K
5.2
SOA008 — 8-Lead Plastic Small Outline Package (150-mils Body Width)
m
en
d
ed
fo
rN
ew
D
es
ig
n
5.2.1
Physical Diagrams
MIN.
-
A1
0.10
A2
1.32
b
0.31
D
-
1.75
-
0.25
0.50
MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
LOWER RADIUS OF THE LEAD FOOT.
9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
SEATING PLANE.
-
0.51
-
0.48
-
0.25
0.17
-
0.23
4.90 BSC
E
6.00 BSC
3.90 BSC
e
L
0.89
-
-
E1
1.27 BSC
-
0.40
L1
1.04 REF
L2
0.25 BSC
8
N
h
0.25
-
0
0°
-
8°
01
5°
-
15°
02
NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
THE PLASTIC BODY.
5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
PACKAGE LENGTH.
7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
0.25 mm FROM THE LEAD TIP.
8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
0.17
0.28
N
c
c1
MAX.
ot
b1
NOM.
R
A
ec
om
DIMENSIONS
SYMBOL
0° REF
CYPRESS
Company Confidential
TITLE
THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
Document Number: 002-00497 Rev. *H
DRAWN BY
PACKAGE
CODE(S)
SOA008
KOTA
APPROVED BY
LKSU
DATE
13-FEB-17
PACKAGE OUTLINE, 8 LEAD SOIC
4.90X3.90X1.75 MM SOA008
SPEC NO.
DATE
13-FEB-17
SCALE : TO FIT
REV
002-18754
**
SHEET
1
OF
2
Page 31 of 90
S25FL116K/S25FL132K/S25FL164K
SOC008 — 8-Lead Plastic Small Outline Package (208-mils Body Width)
en
d
ed
fo
rN
ew
D
es
ig
n
5.2.2
NOTES:
DIMENSIONS
A
1.75
A1
0.05
A2
1.70
b
0.36
b1
0.33
c
c1
E
-
2.16
-
0.25
1.90
0.48
-
0.46
0.19
-
0.24
0.15
-
0.20
ot
R
-
5.28 BSC
8.00 BSC
E1
5.28 BSC
e
L
MAX.
-
N
D
NOM.
m
MIN.
ec
om
SYMBOL
1.27 BSC
-
0.51
L1
1.36 REF
L2
0.25 BSC
0.76
8
N
0
0°
-
8°
01
5°
-
15°
02
1. ALL DIMENSIONS ARE IN MILLIMETERS.
2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
THE PLASTIC BODY.
5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
PACKAGE LENGTH.
7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
0.25 mm FROM THE LEAD TIP.
8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
LOWER RADIUS OF THE LEAD FOOT.
9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
SEATING PLANE.
0-8° REF
CYPRESS
Company Confidential
TITLE
THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
Document Number: 002-00497 Rev. *H
DRAWN BY
PACKAGE
CODE(S)
SOC008
KOTA
APPROVED BY
BESY
DATE
18-JUL-16
PACKAGE OUTLINE, 8 LEAD SOIC
5.28X5.28X2.16 MM SOC008
SPEC NO.
DATE
18-JUL-16
SCALE : TO FIT
REV
002-15548
**
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2
Page 32 of 90
S25FL116K/S25FL132K/S25FL164K
5.2.3
SO3016 — 16-Lead Plastic Wide Outline Package (300-mils Body Width)
0.20 C A-B
0.10 C D
2X
0.33 C
C A-B D
n
0.25 M
es
ig
0.10 C
DIMENSIONS
2.35
A1
0.10
A2
2.05
b
0.31
b1
c
0.27
c1
E
-
2.65
-
0.30
-
2.55
-
0.48
-
0.33
0.20
-
0.30
ot
0.20
10.30 BSC
10.30 BSC
E1
7.50 BSC
e
1.27 BSC
L
0.51
-
N
D
MAX.
R
A
NOTES:
NOM.
m
MIN.
ec
om
SYMBOL
en
d
ed
fo
rN
ew
D
0.10 C
-
0.40
L1
1.40 REF
L2
0.25 BSC
2. DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994.
3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 mm PER
END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 mm PER SIDE.
D AND E1 DIMENSIONS ARE DETERMINED AT DATUM H.
4. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOTTOM. DIMENSIONS
D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD
FLASH, BUT INCLUSIVE OF ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF
THE PLASTIC BODY.
5. DATUMS A AND B TO BE DETERMINED AT DATUM H.
6. "N" IS THE MAXIMUM NUMBER OF TERMINAL POSITIONS FOR THE SPECIFIED
PACKAGE LENGTH.
7. THE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO
0.25 mm FROM THE LEAD TIP.
8. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.10 mm TOTAL IN EXCESS OF THE "b" DIMENSION AT
1.27
16
N
1. ALL DIMENSIONS ARE IN MILLIMETERS.
h
0.25
-
0
0°
-
8°
01
5°
-
15°
02
0°
-
-
MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE
LOWER RADIUS OF THE LEAD FOOT.
9. THIS CHAMFER FEATURE IS OPTIONAL. IF IT IS NOT PRESENT, THEN A PIN 1
IDENTIFIER MUST BE LOCATED WITHIN THE INDEX AREA INDICATED.
10. LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
SEATING PLANE.
0.75
CYPRESS
Company Confidential
TITLE
THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
Document Number: 002-00497 Rev. *H
DRAWN BY
PACKAGE
CODE(S)
SO3016 SL3016 SS3016
KOTA
APPROVED BY
BESY
DATE
24-OCT-16
PACKAGE OUTLINE, 16 LEAD SOIC
10.30X7.50X2.65 MM SO3016/SL3016/SS3016
SPEC NO.
DATE
24-OCT-16
SCALE : TO FIT
REV
002-15547
*A
SHEET
1
OF
2
Page 33 of 90
S25FL116K/S25FL132K/S25FL164K
WND008 — 8-Contact WSON 5 mm 6 mm
R
ec
om
m
en
d
ed
fo
rN
ew
D
es
ig
n
5.2.4
DIMENSIONS
MIN.
e
MAX.
N
1.27 BSC.
8
N
ND
L
NOM.
ot
SYMBOL
NOTES:
1.
DIMENSIONING AND TOLERANCING CONFORMS TO ASME Y14.5M-1994.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
4
DIMENSION "b" APPLIES TO METALLIZED TERMINAL AND IS MEASURED
4
0.55
0.60
N IS THE TOTAL NUMBER OF TERMINALS.
BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. IF THE TERMINAL HAS
0.65
THE OPTIONAL RADIUS ON THE OTHER END OF THE TERMINAL, THE
b
0.35
0.40
0.45
D2
3.90
4.00
4.10
5
ND REFERS TO THE NUMBER OF TERMINALS ON D SIDE.
E2
3.30
3.40
3.50
MAX. PACKAGE WARPAGE IS 0.05mm.
PIN #1 ID ON TOP WILL BE LOCATED WITHIN THE INDICATED ZONE.
DIMENSION "b" SHOULD NOT BE MEASURED IN THAT RADIUS AREA.
D
5.00 BSC
6.
7.
E
6.00 BSC
0.75
0.02
8
9
A
A1
0.70
0.00
A3
0.20 REF
K
0.20 MIN.
0.80
0.05
MAXIMUM ALLOWABLE BURR IS 0.076mm IN ALL DIRECTIONS.
BILATERAL COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK
SLUG AS WELL AS THE TERMINALS.
10
A MAXIMUM 0.15mm PULL BACK (L1) MAY BE PRESENT.
CYPRESS
Company Confidential
TITLE
THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
Document Number: 002-00497 Rev. *H
DRAWN BY
PACKAGE
CODE(S)
WND008
KOTA
APPROVED BY
LKSU
DATE
13-FEB-17
PACKAGE OUTLINE, 8 LEAD DFN
5.0X6.0X0.8 MM WND008 4.0X3.4 MM EPAD (SAWN)
SPEC NO.
DATE
13-FEB-17
SCALE : TO FIT
REV
002-18755
**
SHEET
1
OF
2
Page 34 of 90
S25FL116K/S25FL132K/S25FL164K
UNF008 — 8-Contact USON 4 mm x 4 mm
ec
om
m
en
d
ed
fo
rN
ew
D
es
ig
n
5.2.5
DIMENSIONS
SYMBOL
MIN.
e
ALL DIMENSIONS ARE IN MILLIMETERS.
2.
3.
N IS THE TOTAL NUMBER OF TERMINALS.
R
1.
0.25
D2
2.20
E2
2.90
0.45
0.30
0.35
2.30
2.40
3.00
3.10
ot
b
0.40
N
0.35
4.00 BSC
D
E
0.50
0.00
4.00 BSC
0.55
0.035
DIMENSION "b" APPLIES TO METALLIZED TERMINAL AND IS MEASURED
BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. IF THE TERMINAL HAS
4
L
THE OPTIONAL RADIUS ON THE OTHER END OF THE TERMINAL, THE
DIMENSION "b" SHOULD NOT BE MEASURED IN THAT RADIUS AREA.
4.
ND REFERS TO THE NUMBER OF TERMINALS ON D SIDE.
5.
6.
PIN #1 ID ON TOP WILL BE LOCATED WITHIN THE INDICATED ZONE.
COPLANARITY ZONE APPLIES TO THE EXPOSED HEAT SINK
SLUG AS WELL AS THE TERMINALS.
7.
JEDEC SPECIFICATION NO. REF: N/A
0.60
0.05
0.152 REF
A3
K
MAX.
0.80 BSC.
8
N
ND
A
A1
NOM.
NOTES:
0.20
-
-
CYPRESS
Company Confidential
TITLE
THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
Document Number: 002-00497 Rev. *H
DRAWN BY
PACKAGE
CODE(S)
UNF008
KOTA
APPROVED BY
BESY
DATE
28-NOV-16
PACKAGE OUTLINE, 8 LEAD DFN
4.0X4.0X0.6 MM UNF008, 2.3X3.0 MM EPAD (SAWN)
SPEC NO.
DATE
28-NOV-16
SCALE : TO FIT
REV
002-16243
*A
SHEET
1
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2
Page 35 of 90
S25FL116K/S25FL132K/S25FL164K
FAB024 — 24-Ball Ball Grid Array (8 mm 6 mm) Package
NOTES:
A
-
A1
0.20
NOM.
MAX.
-
1.20
-
D
8.00 BSC
6.00 BSC
4.00 BSC
E1
4.00 BSC
MD
5
DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
4.
e REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
-
R
E
D1
1.
ec
om
MIN.
m
DIMENSIONS
SYMBOL
en
d
ed
fo
rN
ew
D
es
ig
n
5.2.6
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
ot
ME
5
6
N
N
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE
24
b
0.35
0.40
PARALLEL TO DATUM C.
0.45
7
"SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
eE
1.00 BSC
eD
1.00 BSC
POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
SD
0.00 BSC
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0.
SE
0.00 BSC
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND
"SE" = eE/2.
8.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
9.
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK,
METALLIZED MARK INDENTATION OR OTHER MEANS.
CYPRESS
Company Confidential
TITLE
THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
Document Number: 002-00497 Rev. *H
DRAWN BY
PACKAGE
CODE(S)
FAB024
KOTA
APPROVED BY
BESY
DATE
18-JUL-16
PACKAGE OUTLINE, 24 BALL FBGA
8.0X6.0X1.2 MM FAB024
SPEC NO.
DATE
18-JUL-16
SCALE : TO FIT
REV
002-15534
**
SHEET
1
OF
2
Page 36 of 90
S25FL116K/S25FL132K/S25FL164K
FAC024 — 24-Ball Ball Grid Array (8 mm 6 mm) Package
en
d
ed
fo
rN
ew
D
es
ig
n
5.2.7
NOM.
-
-
A1
0.25
8.00 BSC
E
6.00 BSC
D1
5.00 BSC
E1
3.00 BSC
1.20
-
R
D
MAX.
ec
om
MIN.
A
m
NOTES:
DIMENSIONS
SYMBOL
1.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
4.
e
5.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
ot
ME
N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
N
4
N
6
24
b
eE
0.35
0.40
1.00 BSC
REPRESENTS THE SOLDER BALL GRID PITCH.
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
6
MD
DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.
2.
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE
PARALLEL TO DATUM C.
0.45
7
"SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
eD
1.00 BSC
SD
0.50 BSC
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" OR "SE" = 0.
SE
0.50 BSC
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND
"SE" = eE/2.
8.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
9.
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK,
METALLIZED MARK INDENTATION OR OTHER MEANS.
CYPRESS
Company Confidential
TITLE
THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
Document Number: 002-00497 Rev. *H
DRAWN BY
PACKAGE
CODE(S)
FAC024
KOTA
APPROVED BY
BESY
DATE
18-JUL-16
PACKAGE OUTLINE, 24 BALL FBGA
8.0X6.0X1.2 MM FAC024
SPEC NO.
DATE
18-JUL-16
SCALE : TO FIT
REV
002-15535
**
SHEET
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2
Page 37 of 90
S25FL116K/S25FL132K/S25FL164K
Software Interface
This section discusses the features and behaviors most relevant to host system software that interacts with S25FL1-K memory
devices.
6. Address Space Maps
6.1
Overview
Many commands operate on the main flash memory array. Some commands operate on address spaces separate from the main
flash array. Each separate address space uses the full 24-bit address but may only define a small portion of the available address
space.
n
Flash Memory Array
es
ig
6.2
The main flash array is divided into erase units called sectors. The sectors are uniform 4 kbytes in size.
D
Table 13. S25FL116K Main Memory Address Map
4
512
Sector Range
SA0
fo
:
000000h-000FFFh
:
1FF000h-1FFFFFh
Notes
Sector Starting Address
—
Sector Ending Address
en
d
ed
SA511
Address Range
(Byte Address)
ew
Sector Count
rN
Sector Size (kbyte)
Sector Count
4
1024
Sector Range
Address Range
(Byte Address)
SA0
000000h-000FFFh
:
:
SA1023
3FF000h-3FFFFFh
Sector Range
Address Range
(Byte Address)
SA0
000000h-000FFFh
:
:
SA2047
7FF000h-7FFFFFh
Notes
Sector Starting Address
—
Sector Ending Address
N
ot
R
ec
om
Sector Size (kbyte)
m
Table 14. S25FL132K Main Memory Address Map
Table 15. S25FL164K Main Memory Address Map
Sector Size (kbyte)
Sector Count
4
2048
Notes
Sector Starting Address
—
Sector Ending Address
Note: These are condensed tables that use a couple of sectors as references. There are address ranges that are not explicitly listed.
All 4-kB sectors have the pattern XXX000h-XXXFFFh.
Document Number: 002-00497 Rev. *H
Page 38 of 90
S25FL116K/S25FL132K/S25FL164K
6.3
Security Registers
The S25FL1-K provides four 256-byte Security Registers. Each register can be used to store information that can be permanently
protected by programming One Time Programmable (OTP) lock bits in Status Register-2.
Register 0 is used by Cypress to store and protect the Serial Flash Discoverable Parameters (SFDP) information that is also
accessed by the Read SFDP command. See Section 6.4.
The three additional Security Registers can be erased, programmed, and protected individually. These registers may be used by
system manufacturers to store and permanently protect security or other important information separate from the main memory
array.
Table 16. Security Register Addresses
Address
0 (SFDP)
000000h - 0000FF
1
001000h - 0010FF
es
ig
n
Security Register
2
002000h - 0020FF
003000h - 0030FF
D
3
ew
Security Register 0 — Serial Flash Discoverable Parameters
(SFDP — JEDEC JESD216B)
rN
6.4
fo
This document defines the Serial Flash Discoverable Parameters (SFDP) revision B data structure for S25FL1-K family.
These data structure values are an update to the earlier revision SFDP data structure in the S25FL1-K family devices.
en
d
ed
The Read SFDP (RSFDP) command (5Ah) reads information from a separate flash memory address space for device identification,
feature, and configuration information, in accord with the JEDEC JESD216B standard for Serial Flash Discoverable Parameters.
ec
om
m
The SFDP data structure consists of a header table that identifies the revision of the JESD216 header format that is supported and
provides a revision number and pointer for each of the SFDP parameter tables that are provided. The parameter tables follow the
SFDP header. However, the parameter tables may be placed in any physical location and order within the SFDP address space.
The tables are not necessarily adjacent nor in the same order as their header table entries.
The SFDP header points to the following parameter tables:
Basic Flash
R
Sector Map
N
ot
– This is the original SFDP table. It has a few modified fields and new additional field added at the end of the table.
– This is the original SFDP table. It has a few modified fields and new additional field added at the end of the table.
The physical order of the tables in the SFDP address space is: SFDP Header, Cypress Vendor Specific, Basic Flash, and Sector
Map.
The SFDP address space is programmed by Cypress and read-only for the host system.
Document Number: 002-00497 Rev. *H
Page 39 of 90
S25FL116K/S25FL132K/S25FL164K
6.4.1
Serial Flash Discoverable Parameters (SFDP) Address Map
The SFDP address space has a header starting at address zero that identifies the SFDP data structure and provides a pointer to
each parameter. One Basic Flash parameter is mandated by the JEDEC JESD216B standard.
Table 17. SFDP Overview Map — Security Register 0
Byte Address
Description
0000h
Location zero within JEDEC JESD216B SFDP space – start of SFDP header
,,,
Remainder of SFDP header followed by undefined space
0080h
Start of SFDP parameter
...
Remainder of SFDP JEDEC parameter followed by undefined space
Reserved space
00F8h to 00FFh
Unique Id
SFDP Header Field Definitions
ew
6.4.2
es
ig
00C0h to 00F7h
n
End of SFDP space
SFDP Dword
Name
SFDP Header
1st DWORD
ed
This is the entry point for Read SFDP (5Ah) command i.e. location zero within
SFDP space
ASCII “S”
ASCII “F”
44h
ASCII “D”
03h
50h
m
46h
02h
ec
om
ASCII “P”
01h
SFDP Major Revision
– This is the original major revision. This major revision is compatible with all
SFDP reading and parsing software.
ot
R
06h
SFDP Minor Revision (06h = JEDEC JESD216 Revision B)
– This revision is backward compatible with all prior minor revisions. Minor
revisions are changes that define previously reserved fields, add fields to the end,
or that clarify definitions of existing fields. Increments of the minor revision value
indicate that previously reserved parameter fields may have been assigned a new
definition or entire Dwords may have been added to the parameter table.
However, the definition of previously existing fields is unchanged and therefore
remain backward compatible with earlier SFDP parameter table revisions.
Software can safely ignore increments of the minor revision number, as long as
only those parameters the software was designed to support are used i.e.
previously reserved fields and additional Dwords must be masked or ignored. Do
not do a simple compare on the minor revision number, looking only for a match
with the revision number that the software is designed to handle. There is no
problem with using a higher number minor revision.
N
04h
SFDP Header
2nd DWORD
05h
Description
en
d
53h
fo
Data
00h
01h
rN
Table 18. SFDP Header
SFDP Byte
Address
D
00BFh
06h
03h
Number of Parameter Headers (zero based, 03h = 4 parameters)
07h
FFh
Unused
Document Number: 002-00497 Rev. *H
Page 40 of 90
S25FL116K/S25FL132K/S25FL164K
Table 18. SFDP Header (Continued)
SFDP Byte
Address
SFDP Dword
Name
Data
08h
Description
Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter)
00h
Parameter Minor Revision (00h = JESD216)
– This older revision parameter header is provided for any legacy SFDP reading
and parsing software that requires seeing a minor revision 0 parameter header.
SFDP software designed to handle later minor revisions should continue reading
parameter headers looking for a higher numbered minor revision that contains
additional parameters for that software revision.
0Ah
01h
Parameter Major Revision (01h = The original major revision - all SFDP software
is compatible with this major revision.
0Bh
09h
Parameter Table Length (in double words = Dwords = 4-byte units) 09h = 9
Dwords
80h
Parameter Table Pointer Byte 0 (Dword = 4-byte aligned)
JEDEC Basic SPI Flash parameter byte offset = 80h
00h
Parameter Table Pointer Byte 1
Parameter Table Pointer Byte 2
FFh
Parameter ID MSB (FFh = JEDEC defined legacy Parameter ID)
10h
EFh
Parameter ID LSB (EFh = Winbond Legacy SPI Flash Parameter)
00h
Parameter Minor Revision (00h = JESD216)
– This older revision parameter header is provided for any legacy SFDP reading
and parsing software that requires seeing a minor revision 0 parameter header.
SFDP software designed to handle later minor revisions should continue reading
parameter headers looking for a later minor revision that contains additional
parameters.
01h
Parameter Major Revision (01h = The original major revision – all SFDP software
is compatible with this major revision.
04h
Parameter Table Length (in double words = Dwords = 4-byte units) 04h = 4
Dwords
Parameter
Header
1
1st DWORD
rN
en
d
11h
ec
om
12h
16h
80h
ot
N
15h
Parameter
Header
1
2nd DWORD
R
13h
14h
ed
fo
0Eh
ew
00h
0Fh
m
0Dh
Parameter
Header
0
2nd DWORD
es
ig
0Ch
Parameter
Header
0
1st DWORD
D
09h
n
00h
Parameter Table Pointer Byte 0 (Dword = 4-byte aligned)
JEDEC Basic SPI Flash parameter byte offset = 0080h address
00h
Parameter Table Pointer Byte 1
00h
Parameter Table Pointer Byte 2
17h
FFh
Parameter ID MSB (FFh = JEDEC defined Parameter)
18h
00h
Parameter ID LSB (00h = JEDEC SFDP Basic SPI Flash Parameter)
06h
Parameter Minor Revision (06h = JESD216 Revision B)
01h
Parameter Major Revision (01h = The original major revision - all SFDP software
is compatible with this major revision.
10h
Parameter Table Length (in double words = Dwords = 4-byte units) 10h = 16
Dwords
80h
Parameter Table Pointer Byte 0 (Dword = 4-byte aligned)
JEDEC Basic SPI Flash parameter byte offset = 0080h address
00h
Parameter Table Pointer Byte 1
00h
Parameter Table Pointer Byte 2
FFh
Parameter ID MSB (FFh = JEDEC defined Parameter)
19h
1Ah
Parameter
Header
2
1st DWORD
1Bh
1Ch
1Dh
1Eh
1Fh
Parameter
Header
2
2nd DWORD
Document Number: 002-00497 Rev. *H
Page 41 of 90
S25FL116K/S25FL132K/S25FL164K
Table 18. SFDP Header (Continued)
Data
20h
21h
22h
01h
Parameter
Header
3
1st DWORD
23h
24h
25h
26h
Parameter ID LSB (Cypress Vendor Specific ID parameter)
Legacy Manufacturer ID 01h = AMD / Cypress
01h
Parameter Minor Revision (01h = ID updated with SFDP Rev B table)
01h
Parameter Major Revision (01h = The original major revision - all SFDP software
that recognizes this parameter’s ID is compatible with this major revision.
00h
Parameter Table Length (in double words = Dwords = 4-byte units) 00h not
implemented
00h
Parameter Table Pointer Byte 0 (Dword = 4-byte aligned)
00h
Parameter Table Pointer Byte 1
00h
Parameter Table Pointer Byte 2
01h
Parameter ID MSB (01h = JEDEC JEP106 Bank Number 1)
Data
Description
en
d
SFDP Dword Name
m
SFDP Parameter
Relative Byte
Address
ed
Table 19. Basic SPI Flash Parameter, JEDEC SFDP Rev B
rN
JEDEC SFDP Basic SPI Flash Parameter
fo
6.4.3
ew
D
27h
Parameter
Header
3
2nd DWORD
Description
n
SFDP Dword
Name
es
ig
SFDP Byte
Address
E5h
ec
om
00h
20h
ot
R
01h
N
JEDEC Basic Flash
Parameter Dword-1
02h
F1h
Start of SFDP JEDEC parameter
Bits 7:5 = unused = 111b
Bit 4:3 = 05h is volatile status register write instruction and status register
is default non-volatile= 00b
Bit 2 = Program Buffer > 64 bytes = 1
Bits 1:0 = Uniform 4-kB erase is supported through out the device = 01b
Bits 15:8 = Uniform 4-kB erase instruction = 20h
Bit 23 = Unused = 1b
Bit 22 = Supports QOR Read (1-1-4), Yes = 1b
Bit 21 = Supports QIO Read (1-4-4),Yes =1b
Bit 20 = Supports DIO Read (1-2-2), Yes = 1b
Bit19 = Supports DDR, No= 0 b
Bit 18:17 = Number of Address Bytes 3 only = 00b
Bit 16 = Supports SIO and DIO Yes = 1b
Binary Field: 1-1-1-1-0-00-1
Nibble Format: 1111_0001
Hex Format: F1
03h
FFh
04h
FFh
05h
FFh
06h
JEDEC Basic Flash
Parameter Dword-2
07h
Document Number: 002-00497 Rev. *H
FFh
00h 16Mb
01h 32Mb
03h 64Mb
Bits 31:24 = Unused = FFh
Density in bits, zero based,
16 Mb = 00FFFFFFh
32 Mb = 01FFFFFFh
64 Mb = 03FFFFFFh
Page 42 of 90
S25FL116K/S25FL132K/S25FL164K
Table 19. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address
Description
44h
Bits 7:5 = number of QIO (1-4-4)Mode cycles = 010b
Bits 4:0 = number of Fast Read QIO Dummy cycles = 00100b for default
latency code
EBh
Fast Read QIO (1-4-4)instruction code
0Ah
08h
Bits 23:21 = number of Quad Out (1-1-4) Mode cycles = 000b
Bits 20:16 = number of Quad Out Dummy cycles = 01000b for default
latency code
0Bh
6Bh
Quad Out (1-1-4)instruction code
0Ch
08h
Bits 7:5 = number of Dual Out (1-1-2)Mode cycles = 000b
Bits 4:0 = number of Dual Out Dummy cycles = 01000b for default
latency code
3Bh
Dual Out (1-1-2) instruction code
0Eh
80h
Bits 23:21 = number of Dual I/O Mode cycles = 100b
Bits 20:16 = number of Dual I/O Dummy cycles = 00000b for default
latency code
0Fh
BBh
Dual I/O instruction code
EEh
Bits 7:5 RFU = 111b
Bit 4 = QPI (4-4-4) fast read commands not supported = 0b
Bits 3:1 RFU = 111b
Bit 0 = Dual All not supported = 0b
FFh
Bits 15:8 = RFU = FFh
10h
JEDEC Basic Flash
Parameter Dword-5
es
ig
en
d
11h
D
JEDEC Basic Flash
Parameter Dword-4
ew
0Dh
JEDEC Basic Flash
Parameter Dword-3
rN
09h
fo
08h
n
Data
ed
SFDP Dword Name
FFh
Bits 23:16 = RFU = FFh
13h
FFh
Bits 31:24 = RFU = FFh
14h
FFh
Bits 7:0 = RFU = FFh
FFh
Bits 15:8 = RFU = FFh
FFh
Bits 23:21 = number of Dual All Mode cycles = 111b
Bits 20:16 = number of Dual All Dummy cycles = 11111b
FFh
Dual All instruction code
18h
ec
om
FFh
Bits 7:0 = RFU = FFh
N
17h
R
16h
JEDEC Basic Flash
Parameter Dword-6
ot
15h
m
12h
FFh
Bits 15:8 = RFU = FFh
JEDEC Basic Flash
Parameter Dword-7
FFh
Bits 23:21 = number of QPI Mode cycles = 111b not supported
Bits 20:16 = number of QPI Dummy cycles = 11111b for default latency
code
1Bh
FFh
QPI instruction code “Not supported FF”
1Ch
0Ch
Sector type 1 size 2N Bytes = 4 kB = 0Ch (for Uniform 4 kB)
20h
Sector type 1 instruction
10h
Sector type 2 size 2N Bytes = 64 kB = 0Fh (for Uniform 64 kB)
1Fh
D8h
Sector type 2 instruction
20h
00h
Sector type 3 size 2N Bytes = not supported = 00h
FFh
Sector type 3 instruction = not supported = FFh
00h
Sector type 4 size 2N Bytes = not supported = 00h
FFh
Sector type 4 instruction = not supported = FFh
19h
1Ah
1Dh
1Eh
21h
22h
JEDEC Basic Flash
Parameter Dword-8
JEDEC Basic Flash
Parameter Dword-9
23h
Document Number: 002-00497 Rev. *H
Page 43 of 90
S25FL116K/S25FL132K/S25FL164K
Table 19. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
Description
Bits 31:30 = Sector Type 4 Erase, Typical time units (00b: 1 ms, 01b: 16
ms, 10b: 128 ms, 11b: 1 s) = RFU = 11b
Bits 29:25 = Sector Type 4 Erase, Typical time count = RFU = 11111b (typ
erase time = (count +1) * units) = RFU =11111
Bits 24:23 = Sector Type 3 Erase, Typical time units (00b: 1 ms, 01b: 16
ms, 10b: 128 ms, 11b: 1 s) = RFU = 11b
Bits 22:18 = Sector Type 3 Erase, Typical time count = 00100b (typ erase
time = (count +1) * units) = RFU =11111
Bits 17:16 = Sector Type 2 Erase, Typical time units (00b: 1 ms, 01b: 16
ms, 10b: 128 ms, 11b: 1 s) = 16 ms = 01b
Bits 15:11 = Sector Type 2 Erase, Typical time count = 11110b (typ erase
time = (count +1) * units) = 31*16 ms = 496 ms
Bits 10:9 = Sector Type 1 Erase, Typical time units (00b: 1 ms, 01b: 16
ms, 10b: 128 ms, 11b: 1 s) = 16ms = 01b
Bits 8:4 = Sector Type 1 Erase, Typical time count = 00100b (typ erase
time = (count +1) * units) = 5*16 ms = 80 ms
Bits 3:0 = Count = (Max Erase time / (2 * Typical Erase time))- 1 = 0010b
Multiplier from typical erase time to maximum erase time = 6x multiplier
Max Erase time = 2*(Count +1)*Typ Erase time
42h
n
JEDEC Basic Flash
Parameter Dword-10
Data
rN
ew
D
24h
SFDP Dword Name
es
ig
SFDP Parameter
Relative Byte
Address
F2h
26h
FDh
27h
FFh
N
ot
R
ec
om
m
en
d
25h
ed
fo
Binary Fields: 11-11111-11-11111-01-11110-01-00100-0010
Nibble Format: 1111_1111_1111_1101_1111_0010_0100_0010
Hex Format: FF_FD_F2_42
Document Number: 002-00497 Rev. *H
Page 44 of 90
S25FL116K/S25FL132K/S25FL164K
Table 19. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address
Data
Description
28h
81h
29h
6Ah
2Ah
14h
Bits 23 = Byte Program Typical time, additional byte units (0b:1 µs, 1b:8
µs) = 1 µs = 0b
Bits 22:19 = Byte Program Typical time, additional byte count,
(count+1)*units, count = 0010b, (typ Program time = (count +1) * units) =
3*1 µs =3 µs
Bits 18 = Byte Program Typical time, first byte units (0b:1 µs, 1b:8 µs) = 8
µs = 1b
Bits 17:14 = Byte Program Typical time, first byte count, (count+1)*units,
count = 0001b, (typ Program time = (count +1) * units) = 2*8 µs = 16 µs
Bits 13 = Page Program Typical time units (0b:8 µs, 1b:64 µs) = 64 µs =
1b
Bits 12:8 = Page Program Typical time count, (count+1)*units, count =
01010b, (typ Program time = (count +1) * units) = 11*64 µs = 704 µs
Bits 7:4 = N = 1000b, Page size= 2N = 256B page
Bits 3:0 = Count = 0001b = (Max Page Program time / (2 * Typ Page
Program time))- 1
Multiplier from typical Page Program time to maximum Page Program
time = 4x multiplier
Max Page Program time = 2*(Count +1)*Typ Page Program time
rN
ew
D
es
ig
n
SFDP Dword Name
Binary Fields: 0-0010-1-0001-1-01010-1000-0001
Nibble Format: 0001_0100_0110_1010_1000_0001
Hex Format: 14_6A_81
ed
fo
JEDEC Basic Flash
Parameter Dword-11
N
ot
2Bh
R
ec
om
m
en
d
16 Mb = 1100_0010b = C2h
Bit 31 Reserved = 1b
Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms,
10b: 4 s, 11b: 64 s) = 4s = 10b
Bits 28:24 = Chip Erase, Typical time count, (count+1)*units, count =
00010b, (typ Program time = (count +1) * units) = 3*4s = 12S
C2h 16Mb
C7h 32Mb
CFh 64Mb
32 Mb = 1100_0111b = C7h
Bit 31 Reserved = 1b
Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms,
10b: 4 s, 11b: 64 s) = 4s = 10b
Bits 28:24 = Chip Erase, Typical time count, (count+1)*units, count =
00111b, (typ Program time = (count +1) * units) = 8*4s = 32s
64 Mb = 1100_1111b = CFh
Bit 31 Reserved = 1b
Bits 30:29 = Chip Erase, Typical time units (00b: 16 ms, 01b: 256 ms,
10b: 4 s, 11b: 64 s) = 4s = 10b
Bits 28:24 = Chip Erase, Typical time count, (count+1)*units, count =
01111b, (typ Program time = (count +1) * units) = 16*4S = 64S
Document Number: 002-00497 Rev. *H
Page 45 of 90
S25FL116K/S25FL132K/S25FL164K
Table 19. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address
Data
Description
2Ch
CCh
2Dh
63h
2Eh
16h
Bit 31 = Suspend and Resume supported = 0b
Bits 30:29 = Suspend in-progress erase max latency units (00b: 128ns,
01b: 1us, 10b: 8 µs, 11b: 64 µs) = 1 µs= 01b
Bits 28:24 = Suspend in-progress erase max latency count = 10011b,
max erase suspend latency = (count +1) * units = 20*1 µs = 20 µs
Bits 23:20 = Erase resume to suspend interval count = 0001b, interval =
(count +1) * 64 µs = 2 * 64 µs = 128 µs
Bits 19:18 = Suspend in-progress program max latency units (00b:
128ns, 01b: 1us, 10b: 8 µs, 11b: 64 µs) = 1 µs= 01b
Bits 17:13 = Suspend in-progress program max latency count = 10011b,
max erase suspend latency = (count +1) * units = 20*1 µs = 20 µs
Bits 12:9 = Program resume to suspend interval count = 0001b, interval =
(count +1) * 64 µs = 2 * 64 µs = 128 µs
Bit 8 = RFU = 1b
Bits 7:4 = Prohibited operations during erase suspend
= xxx0b: May not initiate a new erase anywhere (erase nesting not
permitted)
+ xx0xb: May not initiate a page program anywhere
+ x1xxb: May not initiate a read in the erase suspended sector size
+ 1xxxb: The erase and program restrictions in bits 5:4 are sufficient
= 1100b
Bits 3:0 = Prohibited Operations During Program Suspend
= xxx0b: May not initiate a new erase anywhere (erase nesting not
permitted)
+ xx0xb: May not initiate a new page program anywhere (program
nesting not permitted)
+ x1xxb: May not initiate a read in the program suspended page size
+ 1xxxb: The erase and program restrictions in bits 1:0 are sufficient
= 1100b
es
ig
n
SFDP Dword Name
ew
33h
32h
R
JEDEC Basic Flash
Parameter Dword-13
ot
31h
N
30h
ec
om
m
en
d
ed
fo
rN
2Fh
D
JEDEC Basic Flash
Parameter Dword-12
33h
Document Number: 002-00497 Rev. *H
7Ah
75h
7Ah
75h
Binary Fields: 0-01-10011-0001-01-10011-0001-1-1100-1100
Nibble Format: 0011_0011_0001_0110_0110_0011_1100_1100
Hex Format: 33_16_63_CC
Bits 31:24 = Erase Suspend Instruction = 75h
Bits 23:16 = Erase Resume Instruction = 7Ah
Bits 15:8 = Program Suspend Instruction = 75h
Bits 7:0 = Program Resume Instruction = 7Ah
Page 46 of 90
S25FL116K/S25FL132K/S25FL164K
Table 19. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address
Data
Description
34h
F7h
35h
A2h
36h
D5h
Bit 31 = Deep Power-Down Supported = 0
Bits 30:23 = Enter Deep Power-Down Instruction = B9h
Bits 22:15 = Exit Deep Power-Down Instruction = ABh
Bits 14:13 = Exit Deep Power-Down to next operation delay units = (00b:
128 ns, 01b: 1 µs, 10b: 8 µs, 11b: 64 µs) = 1 µs = 01b
Bits 12:8 = Exit Deep Power-Down to next operation delay count =
00010b, Exit Deep Power-Down to next operation delay =
(count+1)*units = 3*1 µs=3 µs
Bits 7:4 = RFU = 1111b
Bit 3:2 = Status Register Polling Device Busy
= 01b: Legacy status polling supported = Use legacy polling by reading
the Status Register with 05h instruction and checking WIP bit[0]
(0=ready; 1=busy).
Bits 1:0 = RFU = 11b
JEDEC Basic Flash
Parameter Dword-14
5Ch
es
ig
37h
n
SFDP Dword Name
59h
rN
3Ah
Bits 31:24 = RFU = FFh
Bit 23 = Hold and WP Disable = not supported = 0b
Bits 22:20 = Quad Enable Requirements
= 101b: QE is bit 1 of the status register 2. Status register 1 is read using
Read Status instruction 05h. Status register 2 is read using instruction
35h. QE is set via Write Status instruction 01h with two data bytes where
bit 1 of the second byte is one. It is cleared via Write Status with two data
bytes where bit 1 of the second byte is zero.
Bits 19:16 0-4-4 Mode Entry Method
= xxx1b: Mode Bits[7:0] = A5h Note: QE must be set prior to using this
mode
+ x0xxb: Mode Bits[7:0] = Axh
+ 1xxxb: RFU
= 1001b
Bits 15:10 0-4-4 Mode Exit Method
= xx_xxx1b: Mode Bits[7:0] = 00h will terminate this mode at the end of
the current read operation
+ xx_1xxxb: Input Fh (mode bit reset) on DQ0-DQ3 for 8 clocks. This will
terminate the mode prior to the next read operation.
+ 11_x1xx: RFU
= 111101
Bit 9 = 0-4-4 mode supported = 1
Bits 8:4 = 4-4-4 mode enable sequences = 0_0000b: not supported
Bits 3:0 = 4-4-4 mode disable sequences = 0000b: not supported
fo
00h
F6h
ec
om
m
en
d
ed
38h
39h
ew
D
Binary Fields: 0-10111001-10101011-01-00010-1111-01-11
Nibble Format: 0101_1100_1101_0101_1010_0010_1111_0111
Hex Format: 5C_D5_A2_F7
ot
N
3Bh
R
JEDEC Basic Flash
Parameter Dword-15
FFh
Binary Fields: 11111111-0-101-1001-111101-1-00000-0000
Nibble Format: 1111_1111_0101_1001_1111_0110_0000_0000
Hex Format: FF_59_F6_00
Document Number: 002-00497 Rev. *H
Page 47 of 90
S25FL116K/S25FL132K/S25FL164K
Table 19. Basic SPI Flash Parameter, JEDEC SFDP Rev B (Continued)
SFDP Parameter
Relative Byte
Address
Data
Description
3Ch
E8h
3Dh
10h
3Eh
C0h
Bits 31:24 = Enter 4-Byte Addressing
= xxxx_xxx1b:issue instruction B7 (preceding write enable not required
+ xx1x_xxxxb: Supports dedicated 4-byte address instruction set.
Consult vendor data sheet for the instruction set definition or look for 4byte Address Parameter Table.
+ 1xxx_xxxxb: Reserved
= 10000000b not supported
Bits 23:14 = Exit 4-byte Addressing
= xx_xxxx_xxx1b:issue instruction E9h to exit 4-byte address mode
(Write enable instruction 06h is not required)
+ xx_xx1x_xxxxb: Hardware reset
+ xx_x1xx_xxxxb: Software reset (see bits 13:8 in this DWORD)
+ xx_1xxx_xxxxb: Power cycle
+ x1_xxxx_xxxxb: Reserved
+ 1x_xxxx_xxxxb: Reserved
= 11_0000_0000b not supported
Bits 13:8 = Soft Reset and Rescue Sequence Support
= x1_xxxxb: issue reset enable instruction 66h, then issue reset
instruction 99h. The reset enable, reset sequence may be issued on 1,2,
or 4 wires depending on the device operating mode
= 01_0000b
Bit 7 = RFU = 1
Bits 6:0 = Volatile or Non-Volatile Register and Write Enable Instruction
for Status Register 1
= xxx_1xxxb: Non-Volatile/Volatile status register 1 powers-up to last
written value in the non-volatile status register, use instruction 06h to
enable write to non-volatile status register. Volatile status register may be
activated after power-up to override the non-volatile status register, use
instruction 50h to enable write and activate the volatile status register.
+ x1x_xxxxb: Reserved
+ 1xx_xxxxb: Reserved
= 1101000b
ew
D
es
ig
n
SFDP Dword Name
80h
Binary Fields: 10000000-1100000000-010000-1-1101000
Nibble Format: 1000_0000_1100_0000_0001_0000_1110_1000
Hex Format: 80_C0_10_E8
N
ot
R
ec
om
m
en
d
ed
fo
3Fh
rN
JEDEC Basic Flash
Parameter Dword-16
Document Number: 002-00497 Rev. *H
Page 48 of 90
S25FL116K/S25FL132K/S25FL164K
6.5
Status Registers
Status Register-1 (SR1) and Status Register-2 (SR2) can be used to provide status on the availability of the flash memory array, if
the device is write enabled or disabled, the state of write protection, Quad SPI setting, Security Register lock status, and Erase /
Program Suspend status.
SR1 and SR2 contain non-volatile bits in locations SR1[7:2] and SR2[6:0] that control sector protection, OTP Register Protection,
Status Register Protection, and Quad mode. Bit locations SR2[7], SR1[1], and SR1[0] are read only volatile bits for suspend, write
enable, and busy status; these are updated by the memory control logic. The SR1[1] write enable bit is set only by the Write Enable
(06h) command and cleared by the memory control logic when an embedded operation is completed.
Write access to the non-volatile Status Register bits is controlled by the state of the non-volatile Status Register Protect bits SR1[7]
and SR2[0] (SRP0, SRP1), the Write Enable command (06h) preceding a Write Status Registers command, and while Quad mode
is not enabled, the WP# pin.
D
es
ig
n
A volatile version of bits SR2[6], SR2[1], and SR1[7:2] that control sector protection and Quad Mode are used to control the behavior
of these features after power up. During power up or software reset, these volatile bits are loaded from the non-volatile version of the
Status Register bits. The Write Enable for Volatile Status Register (50h) command can be used to write these volatile bits when the
command is followed by a Write Status Registers (01h) command. This gives more flexibility to change the system configuration and
memory protection schemes quickly without waiting for the typical non-volatile bit write cycles or affecting the endurance of the
Status Register non-volatile bits.
rN
ew
Write access to the volatile SR1 and SR2 Status Register bits is controlled by the state of the non-volatile Status Register Protect
bits SR1[7] and SR2[0] (SRP0, SRP1), the Write Enable for Volatile Status Register command (50h) preceding a Write Status
Registers command, and while Quad mode is not enabled, the WP# pin.
Status Register-3 (SR3) is used to configure and provide status on the variable read latency, and Quad IO wrapped read features.
Table 20. Status Register-1 (SR1)
Function
SRP0
Status
Register
Protect 0
SEC
Sector / Block
Protect
Default State
Description
0
0 = WP# input has no effect or Power Supply Lock
Down mode
1 = WP# input can protect the Status Register or OTP
Lock Down
See Table 29 on page 56.
0
0 = BP2-BP0 protect 64-kB blocks
1 = BP2-BP0 protect 4-kB sectors
See Table 25 on page 53 and Table 26 on page 54
for protection ranges.
0
0 = BP2-BP0 protect from the Top down
1 = BP2-BP0 protect from the Bottom up
See Table 25 on page 53 and Table 26 on page 54
for protection ranges.
m
Type
N
6
ot
R
7
Field
Name
ec
om
Bits
en
d
ed
fo
Write access to the volatile SR3 Status Register bits is controlled by Write Enable for Volatile Status Register command (50h)
preceding a Write Status Register command. The SRP bits do not protect SR3.
Non-volatile and
Volatile versions
Top / Bottom
Protect
5
TB
4
BP2
3
BP1
2
BP0
1
WEL
Write Enable
Latch
Volatile, Read only
0
0 = Not Write Enabled, no embedded operation can
start
1 = Write Enabled, embedded operation can start
0
BUSY
Embedded
Operation
Status
Volatile, Read only
0
0 = Not Busy, no embedded operation in progress
1 = Busy, embedded operation in progress
0
Block Protect
Bits
Document Number: 002-00497 Rev. *H
0
0
000b = No protection
See Table 25 on page 53 and Table 26 on page 54
for protection ranges.
Page 49 of 90
S25FL116K/S25FL132K/S25FL164K
Table 21. Status Register-2 (SR2)
Bits
Field Name
Function
Type
Default State
7
SUS
Suspend
Status
Volatile, Read Only
0
0 = Erase / Program not suspended
1 = Erase / Program suspended
6
CMP
Complement
Protect
Non-volatile and
Volatile versions
0
0 = Normal Protection Map
1 = Inverted Protection Map
See Table 25 on page 53 and Table 26 on page 54
for protection ranges.
5
LB3
4
LB2
LB0
OTP
0
n
2
0
Security
Register
Lock Bits
1
es
ig
LB1
OTP Lock Bits 3:0 for Security Registers 3:0
0 = Security Register not protected
1 = Security Register protected
Security register 0 contains the Serial Flash
Discoverable Parameters and is always
programmed and locked by Cypress.
0 = Quad Mode Not Enabled, the WP# pin and
0
HOLD# are enabled
(For all model
1 = Quad Mode Enabled, the IO2 and IO3 pins are
numbers
enabled, and WP# and HOLD# functions are
except ‘Q1’)
disabled
Quad Enable
en
d
SRP1
Status
Register
Protect 1
0
0 = SRP1 selects whether WP# input has effect on
protection of the status register
1 = SRP1 selects Power Supply Lock Down or OTP
Lock Down mode
See Table 29 on page 56.
ec
om
m
0
1
1 = Quad Mode Enabled and can not be changed,
(For model the IO2 and IO3 pins are enabled, and WP# and
number ‘Q1’) HOLD# functions are disabled
ed
Non-volatile and
Volatile versions
rN
QE
fo
1
ew
D
3
0
Description
Note:
1. LB0 value should be considered don't care for read. This bit is set to 1.
R
Table 22. Status Register-3 (SR3)
Field Name
Function
7
RFU
Reserved
6
W6
5
W5
4
W4
1
Description
Reserved for Future Use
N
Default State
0
1
Burst Wrap
Length
1
00 = 8-byte wrap. Data read starts at the initial address
and wraps within an aligned 8-byte boundary.
01 = 16-byte wrap. Data read starts at the initial address
and wraps within an aligned 16-byte boundary.
10 = 32-byte wrap. Data read starts at the initial address
and wraps within an aligned 32-byte boundary.
11 = 64-byte wrap. Data read starts at the initial address
and wraps within an aligned 64-byte boundary.
Burst Wrap
Enable
3
2
Type
ot
Bits
Volatile
1
0
Latency
Variable Read
Control (LC) Latency Control
0
Document Number: 002-00497 Rev. *H
0
0
0
0 = Wrap Enabled
1 = Wrap Disabled
Defines the number of read latency cycles in Fast Read,
Dual Out, Quad Out, Dual IO, and Quad IO commands.
Binary values for 1 to 15 latency cycles. A value of zero
disables the variable latency mode.
Page 50 of 90
S25FL116K/S25FL132K/S25FL164K
6.5.1
BUSY
BUSY is a read only bit in the Status Register (SR1[0]) that is set to a 1 state when the device is executing a Page Program, Sector
Erase, Block Erase, Chip Erase, Write Status Registers or Erase / Program Security Register command. During this time the device
will ignore further commands except for the Software Reset, Read Status Register and Erase / Program Suspend commands (see
tW, tPP, tSE, tBE, and tCE in Section 4.8, AC Electrical Characteristics on page 25). When the program, erase or write status / security
register command has completed, the BUSY bit will be cleared to a 0 state indicating the device is ready for further commands.
6.5.2
Write Enable Latch (WEL)
6.5.3
es
ig
n
Write Enable Latch (WEL) is a read only bit in the Status Register (SR1[1]) that is set to 1 after executing a Write Enable Command.
The WEL status bit is cleared to 0 when the device is write disabled. A write disable state occurs upon power-up or after any of the
following commands: Write Disable, Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Registers, Erase Security
Register and Program Security Register. The WEL status bit is cleared to 0 even when a program or erase operation is prevented by
the block protection bits. The WEL status bit is also cleared to 0 when a program or erase operation is suspended. The WEL status
bit is set to 1 when a program or erase operation is resumed.
Block Protect Bits (BP2, BP1, BP0)
Top / Bottom Block Protect (TB)
ed
6.5.4
fo
rN
ew
D
The Block Protect Bits (BP2, BP1, BP0) are non-volatile read / write bits in the Status Register (SR1[4:2]) that provide Write
Protection control and status. Block Protect bits can be set using the Write Status Registers Command (see tW in Section 4.8, AC
Electrical Characteristics on page 25). All, none or a portion of the memory array can be protected from Program and Erase
commands (see Section 6.5.7, Block Protection Maps on page 52). The factory default setting for the Block Protection Bits is 0
(none of the array is protected.)
Sector / Block Protect (SEC)
ec
om
6.5.5
m
en
d
The non-volatile Top / Bottom bit (TB SR1[5]) controls if the Block Protect Bits (BP2, BP1, BP0) protect from the Top (TB=0) or the
Bottom (TB=1) of the array as shown in Section 6.5.7, Block Protection Maps on page 52. The factory default setting is TB=0. The
TB bit can be set with the Write Status Registers Command depending on the state of the SRP0, SRP1 and WEL bits.
R
The non-volatile Sector / Block Protect bit (SEC SR1[6]) controls if the Block Protect Bits (BP2, BP1, BP0) protect either 4-kB
Sectors (SEC=1) or 64-kB Blocks (SEC=0) in the Top (TB=0) or the Bottom (TB=1) of the array as shown in Section 6.5.7, Block
Protection Maps on page 52. The default setting is SEC=0.
Complement Protect (CMP)
ot
6.5.6
N
The Complement Protect bit (CMP SR2[6]) is a non-volatile read / write bit in the Status Register (SR2[6]). It is used in conjunction
with SEC, TB, BP2, BP1 and BP0 bits to provide more flexibility for the array protection. Once CMP is set to 1, previous array
protection set by SEC, TB, BP2, BP1 and BP0 will be reversed. For instance, when CMP=0, a top 4-kB sector can be protected
while the rest of the array is not; when CMP=1, the top 4-kB sector will become unprotected while the rest of the array become readonly. Refer to Section 6.5.7, Block Protection Maps on page 52 for details. The default setting is CMP=0.
Document Number: 002-00497 Rev. *H
Page 51 of 90
S25FL116K/S25FL132K/S25FL164K
6.5.7
Block Protection Maps
Table 23. FL116K Block Protection (CMP = 0)
Status Register (1)
S25FL1-K (16 Mbit) Block Protection (CMP=0) (2)
SEC
TB
BP2
BP1
BP0
Protected Block(s)
Protected Addresses
Protected
Density
Protected Portion
X
X
0
0
0
None
None
None
None
0
0
0
0
1
31
1F0000h – 1FFFFFh
64 kB
Upper 1/32
0
0
0
1
0
30 and 31
1E0000h – 1FFFFFh
128 kB
Upper 1/16
0
0
1
1
28 thru 31
1C0000h – 1FFFFFh
256 kB
Upper 1/8
0
1
0
0
24 thru 31
180000h – 1FFFFFh
512 kB
Upper 1/4
0
0
1
0
1
16 thru 31
100000h – 1FFFFFh
1 MB
Upper 1/2
0
1
0
0
1
0
000000h – 00FFFFh
64 kB
Lower 1/32
0
1
0
1
0
0 and 1
000000h – 01FFFFh
128 kB
Lower 1/16
0
1
0
1
1
0 thru 3
000000h – 03FFFFh
256 kB
Lower 1/8
0
1
1
0
0
0 thru 7
000000h – 07FFFFh
512 kB
Lower 1/4
0
1
1
0
1
0 thru 15
000000h – 0FFFFFh
1 MB
Lower 1/2
X
X
1
1
X
0 thru 31
000000h – 1FFFFFh
2 MB
All
1
0
0
0
1
31
1FF000h – 1FFFFFh
4 kB
Upper 1/512
1
0
0
1
0
31
1
0
0
1
1
31
1
0
1
0
X
31
1
1
0
0
1
0
1
1
0
1
0
1
1
0
1
1
1
1
1
0
X
es
ig
D
ew
rN
8 kB
Upper 1/256
1FC000h – 1FFFFFh
16 kB
Upper 1/128
1F8000h – 1FFFFFh
32 kB
Upper 1/64
000000h – 000FFFh
4 kB
Lower 1/512
en
d
ed
fo
1FE000h – 1FFFFFh
0
000000h – 001FFFh
8 kB
Lower 1/256
0
000000h – 003FFFh
16 kB
Lower 1/128
0
000000h – 007FFFh
32 kB
Lower 1/64
m
ec
om
Notes:
1. X = don’t care.
n
0
0
R
2. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
N
ot
Table 24. FL116K Block Protection (CMP = 1)
Status Register (1)
S25FL1-K (16 Mbit) Block Protection (CMP=1) (2)
Protected Addresses
Protected
Density
SEC
TB
BP2
BP1
BP0
Protected Block(s)
Protected Portion
X
X
0
0
0
0 thru 31
000000h – 1FFFFFh
All
All
0
0
0
0
1
0 thru 30
000000h – 1EFFFFh
1,984 kB
Lower 31/32
0
0
0
1
0
0 thru 29
000000h – 1DFFFFh
1,920 kB
Lower 15/16
0
0
0
1
1
0 thru 27
000000h – 1BFFFFh
1,792 kB
Lower 7/8
0
0
1
0
0
0 thru 23
000000h – 17FFFFh
1,536 kB
Lower 3/4
0
0
1
0
1
0 thru 15
000000h – 0FFFFFh
1 MB
Lower 1/2
0
1
0
0
1
1 thru 31
010000h – 1FFFFFh
1,984 kB
Upper 31/32
0
1
0
1
0
2 and 31
020000h – 1FFFFFh
1,920 kB
Upper 15/16
0
1
0
1
1
4 thru 31
040000h – 1FFFFFh
1,792 kB
Upper 7/8
0
1
1
0
0
8 thru 31
080000h – 1FFFFFh
1,536 kB
Upper 3/4
0
1
1
0
1
16 thru 31
100000h – 1FFFFFh
1 MB
Upper 1/2
X
X
1
1
X
None
None
None
None
Document Number: 002-00497 Rev. *H
Page 52 of 90
S25FL116K/S25FL132K/S25FL164K
Table 24. FL116K Block Protection (CMP = 1) (Continued)
Status Register (1)
S25FL1-K (16 Mbit) Block Protection (CMP=1) (2)
1
0
0
0
1
0 thru 31
000000h – 1FEFFFh
2,044 kB
Lower 511/512
1
0
0
1
0
0 thru 31
000000h – 1FDFFFh
2,040 kB
Lower 255/256
1
0
0
1
1
0 thru 31
000000h – 1FBFFFh
2,032 kB
Lower 127/128
1
0
1
0
X
0 thru 31
000000h – 1F7FFFh
2,016 kB
Lower 63/64
1
1
0
0
1
0 thru 31
001000h – 1FFFFFh
2,044 kB
Upper 511/512
1
1
0
1
0
0 thru 31
002000h – 1FFFFFh
2,040 kB
Upper 255/256
1
1
0
1
1
0 thru 31
004000h – 1FFFFFh
2,032 kB
Upper 127/128
1
1
1
0
X
0 thru 31
008000h – 1FFFFFh
2,016 kB
Upper 63/64
n
Notes:
1. X = don’t care.
es
ig
2. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
Table 25. FL132K Block Protection (CMP = 0)
S25FL132K (32-Mbit) Block Protection (CMP=0) ()
TB
BP2
BP1
BP0
Protected Block(s)
X
X
0
0
0
None
0
0
0
0
1
63
1
0
62 and 63
0
1
1
60 thru 63
0
0
1
0
0
56 thru 63
0
0
1
0
1
48 thru 63
0
0
1
1
0
32 thru 63
0
1
0
0
1
0
1
0
1
0
1
0
1
0
1
1
0
0
1
1
0
1
1
None
None
None
64 kB
Upper 1/64
3E0000h – 3FFFFFh
128 kB
Upper 1/32
3C0000h – 3FFFFFh
256 kB
Upper 1/16
380000h – 3FFFFFh
512 kB
Upper 1/8
300000h – 3FFFFFh
1 MB
Upper 1/4
2 MB
Upper 1/2
000000h – 00FFFFh
64 kB
Lower 1/64
0
0 and 1
000000h – 01FFFFh
128 kB
Lower 1/32
1
0 thru 3
000000h – 03FFFFh
256 kB
Lower 1/16
0 thru 7
000000h – 07FFFFh
512 kB
Lower 1/8
R
ec
om
m
200000h – 3FFFFFh
0
0 thru 15
000000h – 0FFFFFh
1 MB
Lower 1/4
1
ot
1
X
Protected Portion
0
0
0 thru 31
000000h – 1FFFFFh
2 MB
Lower 1/2
1
1
0 thru 63
000000h – 3FFFFFh
4 MB
All
1
N
0
X
Protected
Density
3F0000h – 3FFFFFh
fo
0
0
ed
0
0
en
d
0
Protected Addresses
rN
SEC
ew
D
Status Register (1)
1
0
0
0
1
63
3FF000h – 3FFFFFh
4 kB
Upper 1/1024
1
0
0
1
0
63
3FE000h – 3FFFFFh
8 kB
Upper 1/512
1
0
0
1
1
63
3FC000h – 3FFFFFh
16 kB
Upper 1/256
1
0
1
0
X
63
3F8000h – 3FFFFFh
32 kB
Upper 1/128
1
1
0
0
1
0
000000h – 000FFFh
4 kB
Lower 1/1024
1
1
0
1
0
0
000000h – 001FFFh
8 kB
Lower 1/512
1
1
0
1
1
0
000000h – 003FFFh
16 kB
Lower 1/256
1
1
1
0
X
0
000000h – 007FFFh
32 kB
Lower 1/128
Notes:
1. X = don’t care.
2. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
Document Number: 002-00497 Rev. *H
Page 53 of 90
S25FL116K/S25FL132K/S25FL164K
Table 26. FL132K Block Protection (CMP = 1)
Status Register (1)
S25FL132K (32-Mbit) Block Protection (CMP=1) (2)
SEC
TB
BP2
BP1
BP0
Protected Block(s)
Protected Addresses
Protected
Density
Protected Portion
X
X
0
0
0
0 thru 63
000000h – 3FFFFFh
4 MB
All
0
0
0
0
1
0 thru 62
000000h – 3EFFFFh
4,032 kB
Lower 63/64
0
0
0
1
0
0 and 61
000000h – 3DFFFFh
3,968 kB
Lower 31/32
0
0
0
1
1
0 thru 59
000000h – 3BFFFFh
3,840 kB
Lower 15/16
0
0
1
0
0
0 thru 55
000000h – 37FFFFh
3,584 kB
Lower 7/8
0
0
1
0
1
0 thru 47
000000h – 2FFFFFh
3 MB
Lower 3/4
0
0
1
1
0
0 thru 31
000000h – 1FFFFFh
2 MB
Lower 1/2
0
1
0
0
1
1 thru 63
010000h – 3FFFFFh
0
1
0
1
0
2 and 63
020000h – 3FFFFFh
0
1
0
1
1
4 thru 63
0
1
1
0
0
8 thru 63
0
1
1
0
1
0
1
1
1
0
X
X
1
1
1
None
1
0
0
0
1
0 thru 63
1
0
0
1
0
0 thru 63
1
0
0
1
1
0 thru 63
Upper 63/64
Upper 31/32
040000h – 3FFFFFh
3,840 kB
Upper 15/16
080000h – 3FFFFFh
3,584 kB
Upper 7/8
16 thru 63
100000h – 3FFFFFh
3 MB
Upper 3/4
32 thru 63
200000h – 3FFFFFh
2 MB
Upper 1/2
ew
D
es
ig
n
4,032 kB
3,968 kB
None
None
4,092 kB
Lower 1023/1024
ed
fo
rN
None
000000h – 3FEFFFh
000000h – 3FDFFFh
4,088 kB
Lower 511/512
000000h – 3FBFFFh
4,080 kB
Lower 255/256
0
1
0
X
0 thru 63
000000h – 3F7FFFh
4,064 kB
Lower 127/128
1
1
0
0
1
0 thru 63
001000h – 3FFFFFh
4,092 kB
Upper 1023/1024
1
1
0
1
0
0 thru 63
002000h – 3FFFFFh
4,088 kB
Upper 511/512
1
1
0
1
1
0 thru 63
004000h – 3FFFFFh
4,080 kB
Upper 255/256
1
1
1
0
0 thru 63
008000h – 3FFFFFh
4,064 kB
Upper 127/128
m
ec
om
X
R
Notes:
1. X = don’t care.
en
d
1
N
ot
2. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
Table 27. FL164K Block Protection (CMP = 0)
Status Register (1)
S25FL164K (64-Mbit) Block Protection (CMP=0) (2)
SEC
TB
BP2
BP1
BP0
Protected Block(s)
Protected Addresses
Protected
Density
Protected Portion
X
X
0
0
0
None
None
None
None
0
0
0
0
1
126 and 127
7E0000h – 7FFFFFh
128 kB
Upper 1/64
0
0
0
1
0
124 thru 127
7C0000h – 7FFFFFh
256 kB
Upper 1/32
0
0
0
1
1
120 thru 127
780000h – 7FFFFFh
512 kB
Upper 1/16
0
0
1
0
0
112 thru 127
700000h – 7FFFFFh
1 MB
Upper 1/8
0
0
1
0
1
96 thru 127
600000h – 7FFFFFh
2 MB
Upper 1/4
0
0
1
1
0
64 thru 127
400000h – 7FFFFFh
4 MB
Upper 1/2
0
1
0
0
1
0 and 1
000000h – 01FFFFh
128 kB
Lower 1/64
0
1
0
1
0
0 thru 3
000000h – 03FFFFh
256 kB
Lower 1/32
Document Number: 002-00497 Rev. *H
Page 54 of 90
S25FL116K/S25FL132K/S25FL164K
Table 27. FL164K Block Protection (CMP = 0) (Continued)
Status Register (1)
SEC
TB
BP2
S25FL164K (64-Mbit) Block Protection (CMP=0) (2)
BP1
BP0
Protected Block(s)
Protected Addresses
Protected
Density
Protected Portion
1
0
1
1
0 thru 7
000000h – 07FFFFh
512 kB
Lower 1/16
0
1
1
0
0
0 thru 15
000000h – 0FFFFFh
1 MB
Lower 1/8
0
1
1
0
1
0 thru 31
000000h – 1FFFFFh
2 MB
Lower 1/4
0
1
1
1
0
0 thru 63
000000h – 3FFFFFh
4 MB
Lower 1/2
X
X
1
1
1
0 thru 127
000000h – 7FFFFFh
8 MB
ALL
1
0
0
0
1
127
7FF000h – 7FFFFFh
4 kB
Upper 1/2048
1
0
0
1
0
127
7FE000h – 7FFFFFh
8 kB
Upper 1/1024
1
0
0
1
1
127
7FC000h – 7FFFFFh
16 kB
Upper 1/512
0
1
0
X
127
7F8000h – 7FFFFFh
32 kB
Upper 1/256
1
1
0
0
1
0
000000h – 000FFFh
4 kB
Lower1/2048
1
1
0
1
0
0
000000h – 001FFFh
8 kB
Lower 1/1024
1
1
0
1
1
0
000000h – 003FFFh
16 kB
Lower 1/512
1
1
1
0
X
0
000000h – 007FFFh
32 kB
Lower 1/256
rN
ew
es
ig
1
D
n
0
fo
Notes:
1. X = don’t care.
TB
BP2
BP1
X
X
0
0
0
0
0
0
0
0
0
1
0
0
0
1
0
0
1
0
0
0
1
0
0
0
0
BP0
Protected Block(s)
ec
om
SEC
S25FL164K (64-Mbit) Block Protection (CMP=1) (2)
m
Status Register (1)
en
d
Table 28. FL164K Block Protection (CMP = 1)
ed
2. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
Protected Addresses
Protected
Density
Protected Portion
0 thru 127
000000h – 7FFFFFh
8 MB
ALL
1
0 thru 125
000000h – 7DFFFFh
8,064 kB
Lower 63/64
0
0 thru 123
000000h – 7BFFFFh
7,936 kB
Lower 31/32
1
0 thru 119
000000h – 77FFFFh
7,680 kB
Lower 15/16
0
0 thru 111
000000h – 6FFFFFh
7 MB
Lower 7/8
0
1
0 thru 95
000000h – 5FFFFFh
5 MB
Lower 3/4
1
1
0
0 thru 63
000000h – 3FFFFFh
4 MB
Lower 1/2
1
0
0
1
2 thru 127
020000h – 7FFFFFh
8,064 kB
Upper 63/64
1
0
1
0
4 thru 127
040000h – 7FFFFFh
7,936 kB
Upper 31/32
0
1
0
1
1
8 thru 127
080000h – 7FFFFFh
7,680 kB
Upper 15/16
0
1
1
0
0
16 thru 127
100000h – 7FFFFFh
7 MB
Upper 7/8
0
1
1
0
1
32 thru 127
200000h – 7FFFFFh
5 MB
Upper 3/4
0
1
1
1
0
64 thru 127
400000h – 7FFFFFh
4 MB
Upper 1/2
X
X
1
1
1
None
None
None
None
1
0
0
0
1
0 thru 127
000000h – 7FEFFFh
8,188 kB
Lower 2047/2048
1
0
0
1
0
0 thru 127
000000h – 7FDFFFh
8,184 kB
Lower 1023/1024
1
0
0
1
1
0 thru 127
000000h – 7FBFFFh
8,176 kB
Lower 511/512
1
0
1
0
X
0 thru 127
000000h – 7F7FFFh
8,160 kB
Lower 255/256
N
ot
R
0
Document Number: 002-00497 Rev. *H
Page 55 of 90
S25FL116K/S25FL132K/S25FL164K
Table 28. FL164K Block Protection (CMP = 1) (Continued)
Status Register (1)
S25FL164K (64-Mbit) Block Protection (CMP=1) (2)
SEC
TB
BP2
BP1
BP0
Protected Block(s)
Protected Addresses
Protected
Density
Protected Portion
1
1
0
0
1
0 thru 127
001000h – 7FFFFFh
8,188 kB
Lower 2047/2048
1
1
0
1
0
0 thru 127
002000h – 7FFFFFh
8,184 kB
Lower 1023/1024
1
1
0
1
1
0 thru 127
004000h – 7FFFFFh
8,176 kB
Lower 511/512
1
1
1
0
X
0 thru 127
008000h – 7FFFFFh
8,160 kB
Lower 255/256
Notes:
1. X = don’t care.
Status Register Protect (SRP1, SRP0)
es
ig
6.5.8
n
2. If any Erase or Program command specifies a memory region that contains protected data portion, this command will be ignored.
D
The Status Register Protect bits (SRP1 and SRP0) are non-volatile read / write bits in the Status Register (SR2[0] and SR1[7]). The
SRP bits control the method of write protection: software protection, hardware protection, power supply lock-down, or one time
programmable (OTP) protection.
SRP0
WP#
Status Register
rN
SRP1
ew
Table 29. Status Register Protection Bits
Description
0
X
Software Protection
0
1
0
Hardware Protected
When WP# pin is low the SR1 and SR2 are locked and can not be
written.
0
1
1
Hardware Unprotected
When WP# pin is high SR1 and SR2 are unlocked and can be written
to after a Write Enable command, WEL=1.
1
0
X
Power Supply LockDown
SR1 and SR2 are protected and can not be written to again until the
next power-down, power-up cycle. (1)
1
1
X
One Time Program (2)
ec
om
m
en
d
ed
fo
0
WP# pin has no control. SR1 and SR2 can be written to after a Write
Enable command, WEL=1. [Factory Default]
SR1 and SR2 are permanently protected and can not be written.
R
Notes:
1. When SRP1, SRP0 = (1, 0), a power-down, power-up, or Software Reset cycle will change SRP1, SRP0 to (0, 0) state.
ot
2. The One-Time Program feature is available upon special order. Contact Cypress for details.
N
3. Busy, WEL, and SUS (SR1[1:0] and SR2[7]) are volatile read only status bits that are never affected by the Write Status Registers command.
4. The non-volatile version of CMP, QE, SRP1, SRP0, SEC, TB, and BP2-BP0 (SR2[6,1,0] and SR1[6:2]) bits and the OTP LB3-LB0 bits are not writable when protected
by the SRP bits and WP# as shown in the table. The non-volatile version of these Status Register bits are selected for writing when the Write Enable (06h) command
precedes the Write Status Registers (01h) command.
5. The volatile version of CMP, QE, SRP1, SRP0, SEC, TB, and BP2-BP0 (SR2[6,1,0] and SR1[6:2]) bits are not writable when protected by the SRP bits and WP# as
shown in the table. The volatile version of these Status Register bits are selected for writing when the Write Enable for volatile Status Register (50h) command
precedes the Write Status Registers (01h) command. There is no volatile version of the LB3-LB0 bits and these bits are not affected by a volatile Write Status
Registers command.
6. The volatile SR3 bits are not protected by the SRP bits and may be written at any time by volatile (50h) Write Enable command preceding the Write Status Registers
(01h) command.
6.5.9
Erase / Program Suspend Status (SUS)
The Suspend Status bit is a read only bit in the status register (SR2[7]) that is set to 1 after executing an Erase / Program Suspend
(75h) command. The SUS status bit is cleared to 0 by Erase / Program Resume (7Ah) command as well as a power-down, power-up
cycle.
Document Number: 002-00497 Rev. *H
Page 56 of 90
S25FL116K/S25FL132K/S25FL164K
6.5.10
Security Register Lock Bits (LB3, LB2, LB1, LB0)
The Security Register Lock Bits (LB3, LB2, LB1, LB0) are non-volatile One Time Program (OTP) bits in Status Register (SR2[5:2])
that provide the write protect control and status to the Security Registers. The default state of LB[3:1] is 0, Security Registers 1 to 3
are unlocked. LB[3:1] can be set to 1 individually using the Write Status Registers command. LB[3:1] are One Time Programmable
(OTP), once it’s set to 1, the corresponding 256-byte Security Register will become read-only permanently.
Security Register 0 is programmed with the SFDP parameters and LB0 is programmed to 1 by Cypress.
6.5.11
Quad Enable (QE)
The Quad Enable (QE) bit is a non-volatile read / write bit in the Status Register (SR2[1]) that allows Quad SPI operation. When the
QE bit is set to a 0 state (factory default), the WP# pin and HOLD# are enabled. When the QE bit is set to a 1, the Quad IO2 and IO3
pins are enabled, and WP# and HOLD# functions are disabled.
Latency Control (LC)
es
ig
6.5.12
n
Note: If the WP# or HOLD# pins are tied directly to the power supply or ground during standard SPI or Dual SPI operation, the QE
bit should never be set to a 1.
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Status Register-3 provides bits (SR3[3:0]) to select the number of read latency cycles used in each Fast Read command. The Read
Data command is not affected by the latency code. The binary value of this field selects from 1 to 15 latency cycles. The zero value
selects the legacy number of latency cycles used in prior generation FL-K family devices. The default is 0 cycles to provide
backward compatibility to legacy devices. The Latency Control bits may be set to select a number of read cycles optimized for the
frequency in use. If the number of latency cycles is not sufficient for the operating frequency, invalid data will be read.
Read Command Maximum Frequency (MHz)
Dual Output
Dual I/O
Quad Output
Quad I/O
0
(legacy read latency)
108
(8 dummy)
108
(8 dummy)
88
(4 mode, 0 dummy)
108
(8 dummy)
78
(2 mode, 4 dummy)
1
50
50
94
43
49
2
95
85
105
56
59
3
105
4
108
5
108
6
108
7
m
108
70
69
108
83
78
108
108
94
86
108
108
105
95
108
108
108
108
105
108
108
108
108
108
108
108
108
108
108
10
108
108
108
108
108
9
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ot
8
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95
105
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en
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Fast Read
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Latency Control
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Table 30. Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to 3.6V
11
108
108
108
108
108
12
108
108
108
108
108
13
108
108
108
108
108
14
108
108
108
108
108
15
108
108
108
108
108
Notes:
1. SCK frequency > 108 MHz SIO, 108 MHz DIO, or 108 MHz QIO is not supported by this family of devices.
2. The Dual I/O and Quad I/O command protocols include Continuous Read Mode bits following the address. The clock cycles for these bits are not counted as part of the
latency cycles shown in the table. Example: the legacy Dual I/O command has four Continuous Read Mode bits following the address and no additional dummy cycles.
Therefore, the legacy Dual I/O command without additional read latency is supported only up to the frequency shown in the table for a read latency of zero cycles. By
increasing the variable read latency the frequency of the Dual I/O command can be increased to allow operation up to the maximum supported 108 MHz DIO
frequency.
Document Number: 002-00497 Rev. *H
Page 57 of 90
S25FL116K/S25FL132K/S25FL164K
6.5.13
Burst Wrap Enable (W4)
Status Register-3 provides a bit (SR3[4]) to enable a read with wrap option for the Quad I/O Read command. When SR3[4]=1, the
wrap mode is not enabled and unlimited length sequential read is performed. When SR3[4]=0, the wrap mode is enabled and a fixed
length and aligned group of 8, 16, 32, or 64 bytes will be read starting at the byte address provided by the Quad I/O Read command
and wrapping around at the group alignment boundary.
6.5.14
Burst Wrap Length (W6, W5)
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Status Register-3 provides bits (SR3[1:0]) to select the alignment boundary at which reading will wrap to perform a cache line fill.
Reading begins at the initial byte address of a Fast Read Quad IO command, then sequential bytes are read until the selected
boundary is reached. Reading then wraps to the beginning of the selected boundary. This enables critical word first cache line refills.
The wrap point can be aligned on 8-, 16-, 32-, or 64-byte boundaries.
Document Number: 002-00497 Rev. *H
Page 58 of 90
S25FL116K/S25FL132K/S25FL164K
6.6
6.6.1
Device Identification
Legacy Device Identification Commands
Three legacy commands are supported to access device identification that can indicate the manufacturer, device type, and capacity
(density). The returned data bytes provide the information as shown in Table 31.
Table 31. Device Identification
Instruction
—
—
ABh(1)
Device ID = 14h
90h(2)
Manufacturer ID = 01h
Device ID = 14h
Device Type = 40h
9Fh(3)
Manufacturer ID = 01h
ABh(1)
Device ID = 15h
90h(2)
Manufacturer ID = 01h
Device ID = 15h
9Fh(3)
Manufacturer ID = 01h
Device Type = 40h
ABh(1)
Device ID = 16h
90h(2)
Manufacturer ID = 01h
Device ID = 16h
9Fh(3)
Manufacturer ID = 01h
Device Type = 40h
n
—
—
—
Capacity = 15h
—
—
Capacity = 16h
—
—
Capacity = 17h
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S25FL164K
Data 3
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S25FL132K
Data 2
D
S25FL116K
Data 1
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Device OPN
fo
Note:
1. The ABh instruction is followed by three dummy address bytes then the output of Device ID byte. See Command Set (ID, Security Commands) on page 64 and
Release from Deep-Power-Down / Device ID (ABh) on page 77.
ed
2. The 90h instruction is followed by three address bytes with (Address = 0) followed by the output of Manufacturer ID byte then the Device ID byte See Command Set
(ID, Security Commands) on page 64. and Read Manufacturer / Device ID (90h) on page 78.
Serial Flash Discoverable Parameters (SFDP)
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6.6.2
m
en
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3. The 9Fh instruction is followed by the output of the Manufacturer ID byte then Device ID byte then the Capacity byte. See Command Set (ID, Security Commands)
on page 64 and Read JEDEC ID (9Fh) on page 78.
N
ot
R
A Read SFDP (5Ah) command to read a JEDEC standard (JESD216) defined device information structure is supported. The
information is stored in Security Register 0 and described in Security Register 0 — Serial Flash Discoverable Parameters (SFDP —
JEDEC JESD216B) on page 39.
Document Number: 002-00497 Rev. *H
Page 59 of 90
S25FL116K/S25FL132K/S25FL164K
7.
7.1
7.1.1
Functional Description
SPI Operations
Standard SPI Commands
The S25FL1-K is accessed through an SPI compatible bus consisting of four signals: Serial Clock (SCK), Chip Select (CS#), Serial
Data Input (SI) and Serial Data Output (SO). Standard SPI commands use the SI input pin to serially write instructions, addresses or
data to the device on the rising edge of SCK. The SO output pin is used to read data or status from the device on the falling edge
SCK.
7.1.2
es
ig
n
SPI bus operation Mode 0 (0,0) and 3 (1,1) are supported. The primary difference between Mode 0 and Mode 3 concerns the normal
state of the SCK signal when the SPI bus master is in standby and data is not being transferred to the serial flash. For Mode 0, the
SCK signal is normally low on the falling and rising edges of CS#. For Mode 3, the SCK signal is normally high on the falling and
rising edges of CS#.
Dual SPI Commands
Quad SPI Commands
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7.1.3
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The S25FL1-K supports Dual SPI operation when using the “Fast Read Dual Output (3Bh)” and “Fast Read Dual I/O (BBh)”
commands. These commands allow data to be transferred to or from the device at two to three times the rate of ordinary serial flash
devices. The Dual SPI Read commands are ideal for quickly downloading code to RAM upon power-up (code-shadowing) or for
executing non-speed-critical code directly from the SPI bus (XIP). When using Dual SPI commands, the SI and SO pins become
bidirectional I/O pins: IO0 and IO1.
Hold Function
R
7.1.4
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The S25FL1-K supports Quad SPI operation when using the “Fast Read Quad Output (6Bh)”, and “Fast Read Quad I/O (EBh)”
commands. These commands allow data to be transferred to or from the device four to six times the rate of ordinary serial flash. The
Quad Read commands offer a significant improvement in continuous and random access transfer rates allowing fast codeshadowing to RAM or execution directly from the SPI bus (XIP). When using Quad SPI commands the SI and SO pins become
bidirectional IO0 and IO1, and the WP# and HOLD# pins become IO2 and IO3 respectively. Quad SPI commands require the nonvolatile or volatile Quad Enable bit (QE) in Status Register-2 to be set.
N
ot
For Standard SPI and Dual SPI operations, the HOLD# (IO3) signal allows the device interface operation to be paused while it is
actively selected (when CS# is low). The Hold function may be useful in cases where the SPI data and clock signals are shared with
other devices. For example, if the page buffer is only partially written when a priority interrupt requires use of the SPI bus, the Hold
function can save the state of the interface and the data in the buffer so programming command can resume where it left off once
the bus is available again. The Hold function is only available for standard SPI and Dual SPI operation, not during Quad SPI.
To initiate a Hold condition, the device must be selected with CS# low. A Hold condition will activate on the falling edge of the
HOLD# signal if the SCK signal is already low. If the SCK is not already low the Hold condition will activate after the next falling edge
of SCK. The Hold condition will terminate on the rising edge of the HOLD# signal if the SCK signal is already low. If the SCK is not
already low the Hold condition will terminate after the next falling edge of SCK. During a Hold condition, the Serial Data Output, (SO)
or IO0 and IO1, are high impedance and Serial Data Input, (SI) or IO0 and IO1, and Serial Clock (SCK) are ignored. The Chip Select
(CS#) signal should be kept active (low) for the full duration of the Hold operation to avoid resetting the internal logic state of the
device.
Document Number: 002-00497 Rev. *H
Page 60 of 90
S25FL116K/S25FL132K/S25FL164K
7.2
Write Protection
Applications that use non-volatile memory must take into consideration the possibility of noise and other adverse system conditions
that may compromise data integrity. To address this concern, the S25FL1-K provides several means to protect the data from
inadvertent program or erase.
7.2.1
Write Protect Features
Device resets when VCC is below threshold
Time delay write disable after Power-Up
Write enable / disable commands and automatic write disable after erase or program
Command length protection
n
– All commands that Write, Program or Erase must complete on a byte boundary (CS# driven high after a full 8 bits have been
clocked) otherwise the command will be ignored
es
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Software and Hardware write protection using Status Register control
– WP# input protection
Write Protection using the Deep Power-Down command
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– One-Time Program (OTP) write protection
D
– Lock Down write protection until next power-up or Software Reset
en
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ed
fo
Upon power-up or at power-down, the S25FL1-K will maintain a reset condition while VCC is below the threshold value of VWI, (see
Figure 19, Power-Up Timing and Voltage Levels on page 24). While reset, all operations are disabled and no commands are
recognized. During power-up and after the VCC voltage exceeds VWI, all program and erase related commands are further disabled
for a time delay of tPUW. This includes the Write Enable, Page Program, Sector Erase, Block Erase, Chip Erase and the Write Status
Registers commands. Note that the chip select pin (CS#) must track the VCC supply level at power-up until the VCC-min level and
tVSL time delay is reached. If needed a pull-up resistor on CS# can be used to accomplish this.
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om
m
After power-up the device is automatically placed in a write-disabled state with the Status Register Write Enable Latch (WEL) set to
a 0. A Write Enable command must be issued before a Page Program, Sector Erase, Block Erase, Chip Erase or Write Status
Registers command will be accepted. After completing a program, erase or write command the Write Enable Latch (WEL) is
automatically cleared to a write-disabled state of 0.
R
Software controlled main flash array write protection is facilitated using the Write Status Registers command to write the Status
Register Protect (SRP0, SRP1) and Block Protect (CMP, SEC,TB, BP2, BP1 and BP0) bits.
N
ot
The BP method allows a portion as small as 4-kB sector or the entire memory array to be configured as read only. Used in
conjunction with the Write Protect (WP#) pin, changes to the Status Register can be enabled or disabled under hardware control.
See Status Registers on page 49. for further information.
Additionally, the Deep Power-Down (DPD) command offers an alternative means of data protection as all commands are ignored
during the DPD state, except for the Release from Deep-Power-Down (RES ABh) command. Thus, preventing any program or erase
during the DPD state.
7.3
Status Registers
The Read and Write Status Registers commands can be used to provide status and control of the flash memory device.
Document Number: 002-00497 Rev. *H
Page 61 of 90
S25FL116K/S25FL132K/S25FL164K
8.
Commands
The command set of the S25FL1-K is fully controlled through the SPI bus (see Table 32 to Table 35 on page 64). Commands are
initiated with the falling edge of Chip Select (CS#). The first byte of data clocked into the SI input provides the instruction code. Data
on the SI input is sampled on the rising edge of clock with most significant bit (MSB) first.
n
Commands vary in length from a single byte to several bytes. Each command begins with an instruction code and may be followed
by address bytes, a mode byte, read latency (dummy / don’t care) cycles, or data bytes. Commands are completed with the rising
edge of edge CS#. Clock relative sequence diagrams for each command are included in the command descriptions. All read
commands can be completed after any data bit. However, all commands that Write, Program or Erase must complete on a byte
boundary (CS# driven high after a full 8 bits have been clocked) otherwise the command will be ignored. This feature further protects
the device from inadvertent writes. Additionally, while the memory is being programmed or erased, all commands except for Read
Status Register and Suspend commands will be ignored until the program or erase cycle has completed. When the Status Register
is being written, all commands except for Read Status Register will be ignored until the Status Register write operation has
completed.
SR1[7:0] (2)
(4)
Read Status Register-2
35h
SR2[7:0] (2)
(4)
Read Status Register-3
33h
SR3[7:0] (2)
Write Enable
06h
Write Enable for Volatile Status
Register
50h
Write Disable
04h
Write Status Registers
01h
Set Burst with Wrap
77h
Block Erase (64 kB)
Chip Erase
xxh
xxh
xxh
A23–A16
A15–A10, x, x
xxh
02h
A23–A16
A15–A8
A7–A0
A23–A16
A15–A8
A7–A0
D8h
A23–A16
A15–A8
A7–A0
R
BYTE 6
ed
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SR3[7:0]
m
SR2[7:0]
20h
ot
Sector Erase (4 kB)
39h
N
Page Program
SR1[7:0]
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Set Block / Pointer Protection
(S25FL132K / S25FL164K)
BYTE 5
D
05h
BYTE 4
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Read Status Register-1
BYTE 3
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BYTE 2
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BYTE 1
(Instruction)
Command Name
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Table 32. Command Set (Configuration, Status, Erase, Program Commands (1))
SR3[7:0] (3)
D7–D0
C7h / 60h
Erase / Program Suspend
75h
Erase / Program Resume
7Ah
Notes:
1. Data bytes are shifted with Most Significant Bit First. Byte fields with data in brackets ‘[]’ indicate data being read from the device on the SO pin.
2. Status Register contents will repeat continuously until CS# terminates the command.
3. Set Burst with Wrap Input format to load SR3. See Table 22 on page 50.
IO0 = x, x, x, x, x, x, W4, x]
IO1 = x, x, x, x, x, x, W5, x]
IO2 = x, x, x, x, x, x, W6 x]
IO3 = x, x, x, x, x, x, x,x
4. When changing the value of any single bit, read all other bits and rewrite the same value to them.
Document Number: 002-00497 Rev. *H
Page 62 of 90
S25FL116K/S25FL132K/S25FL164K
Table 33. Command Set (Read Commands)
Command Name
BYTE 1
(Instruction)
BYTE 2
BYTE 3
BYTE 4
BYTE 5
03h
A23–A16
A15–A8
A7–A0
(D7–D0, …)
Read Data
BYTE 6
Fast Read
0Bh
A23–A16
A15–A8
A7–A0
dummy
(D7–D0, …)
Fast Read Dual Output
3Bh
A23–A16
A15–A8
A7–A0
dummy
(D7–D0, …) (1)
Fast Read Quad Output
6Bh
A23–A16
A15–A8
A7–A0
dummy
(D7–D0, …) (3)
Fast Read Dual I/O
BBh
A23–A8 (2)
A7–A0, M7–
M0 (2)
(D7–D0, …) (1)
Fast Read Quad I/O
EBh
A23–A0,
M7–M0 (4)
Continuous Read Mode
Reset (6)
FFh
FFh
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ig
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(x,x,x,x,
(D7–D0, …) (3)
D7–D0, …) (5)
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3. Quad Output Data
IO0 = (D4, D0, …..)
IO1 = (D5, D1, …..)
IO2 = (D6, D2, …..)
IO3 = (D7, D3, …..)
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2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8 A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9 A7, A5, A3, A1, M7, M5, M3, M1
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Notes:
1. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
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4. Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
R
5. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0, …..)
IO1 = (x, x, x, x, D5, D1, …..)
IO2 = (x, x, x, x, D6, D2, …..)
IO3 = (x, x, x, x, D7, D3, …..)
N
ot
6. This command is recommended when using the Dual or Quad “Continuous Read Mode” feature. See Section 8.4.3 and Section 8.4.3 on page 75 for more information.
Table 34. Command Set (Reset Commands)
Command Name
Byte 1
(Instruction)
Software Reset Enable
66h
Software Reset
99h
Continuous Read Mode Reset (1)
FFh
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
FFh
Notes:
1. This command is recommended when using the Dual or Quad “Continuous Read Mode” feature. See Section 8.4.3 and Section 8.4.3 on page 75 for more information.
Document Number: 002-00497 Rev. *H
Page 63 of 90
S25FL116K/S25FL132K/S25FL164K
Table 35. Command Set (ID, Security Commands)
BYTE 1
(Instruction)
Command Name
BYTE 2
BYTE 3
BYTE 4
BYTE 5
BYTE 6
B9h
Release Power down / Device
ID
ABh
dummy
dummy
dummy
Device ID (1)
Manufacturer / Device ID (2)
90h
A23–A16
A15–A8
A7–A0
Manufacturer
Device ID
JEDEC ID
9Fh
Manufacturer
Memory Type
Capacity
Read SFDP Register /
Read Unique ID Number
5Ah
00h
00h
A7–A0
dummy
(D7–D0, …)
Read Security Registers (3)
48h
A23–A16
A15–A8
A7–A0
dummy
(D7–D0, …)
Erase Security Registers (3)
44h
A23–A16
A15–A8
A7–A0
Program Security Registers
(3)
42h
A23–A16
A15–A8
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A7–A0
D7–D0, …
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Notes:
1. The Device ID will repeat continuously until CS# terminates the command.
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Deep Power-down
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ed
3. Security Register Address:
Security Register 0: A23-16 = 00h; A15-8 = 00h; A7-0 = byte address
Security Register 1: A23-16 = 00h; A15-8 = 10h; A7-0 = byte address
Security Register 2: A23-16 = 00h; A15-8 = 20h; A7-0 = byte address
Security Register 3: A23-16 = 00h; A15-8 = 30h; A7-0 = byte address
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2. See Section 6.6.1, Legacy Device Identification Commands on page 59 for Device ID information. The 90h instruction is followed by an address. Address = 0 selects
Manufacturer ID as the first returned data as shown in the table. Address = 1 selects Device ID as the first returned data followed by Manufacturer ID.
8.1.1
m
Configuration and Status Commands
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8.1
en
d
Security Register 0 is used to store the SFDP parameters and is always programmed and locked by Cypress.
Read Status Registers (05h), (35h), (33h)
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The Read Status Register commands allow the 8-bit Status Registers to be read. The command is entered by driving CS# low and
shifting the instruction code “05h” for Status Register-1, “35h” for Status Register-2, or 33h for Status Register-3, into the SI pin on
the rising edge of SCK. The Status Register bits are then shifted out on the SO pin at the falling edge of SCK with most significant bit
(MSB) first as shown in Figure 33. The Status Register bits are shown in Section 6.5, Status Registers on page 49.
The Read Status Register-1 (05h) command may be used at any time, even while a Program, Erase, or Write Status Registers cycle
is in progress. This allows the BUSY status bit to be checked to determine when the operation is complete and if the device can
accept another command. The Read Status Register-2 (35h), and Read Status Registers (33h) may be used only when the device
is in standby, not busy with an embedded operation.
Status Registers can be read continuously as each repeated data output delivers the updated current value of each status register.
Example: using the instruction code “05h” for Read Status Register-1, the first output of eight bits may show the device is busy,
SR1[0]=1. By continuing to hold CS# low, the updated value of SR1 will be shown in the next byte output. This repeated reading of
SR1can continue until the system detects the Busy bit has changed back to ready status in one of the status bytes being read out.
The Read Status Register commands are completed by driving CS# high.
Document Number: 002-00497 Rev. *H
Page 64 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 33. Read Status Register Command Sequence Diagram for 05h and 35h
CS#
SCK
SI
7
6
5
4
3
2
1
0
SO
7
Phase
6
5
4
Instruction
3
2
1
0
7
6
5
Status
4
3
2
1
0
Updated Status
Figure 34. Read Status Register-3 Command Sequence Diagram for 33h — S25FL132K / S25FL164K
CS#
SCK
6
5
4
3
2
1
0
SO
7
6
5
4
3
2
1
0
23 22 21 20 11 10 9
Status
Instruction
8
Pointer Address
8.1.2
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D
Phase
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7
es
ig
SI
Write Enable (06h)
ed
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The Write Enable command (Figure 35) sets the Write Enable Latch (WEL) bit in the Status Register to a 1. The WEL bit must be set
prior to every Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Registers and Erase / Program Security
Registers command. The Write Enable command is entered by driving CS# low, shifting the instruction code “06h” into the Data
Input (SI) pin on the rising edge of SCK, and then driving CS# high.
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Figure 35. Write Enable (WREN 06h) Command Sequence
m
CS#
SI
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SCK
7
6
SO
4
2
1
0
ot
Write Enable for Volatile Status Register (50h)
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8.1.3
3
Instruction
R
Phase
5
The non-volatile Status Register bits described in Section 6.5, Status Registers on page 49 can also be written to as volatile bits.
During power up reset, the non-volatile Status Register bits are copied to a volatile version of the Status Register that is used during
device operation. This gives more flexibility to change the system configuration and memory protection schemes quickly without
waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register non-volatile bits. To write the
volatile version of the Status Register bits, the Write Enable for Volatile Status Register (50h) command must be issued and
immediately followed by the Write Status Registers (01h) command. Write Enable for Volatile Status Register command (Figure 36)
will not set the Write Enable Latch (WEL) bit, it is only valid for the next following Write Status Registers command, to change the
volatile Status Register bit values.
Figure 36. Write Enable for Volatile Status Register Command Sequence
CS#
SCK
SI
7
6
5
4
3
2
1
0
SO
Phase
Document Number: 002-00497 Rev. *H
Instruction
Page 65 of 90
S25FL116K/S25FL132K/S25FL164K
8.1.4
Write Disable (04h)
The Write Disable command resets the Write Enable Latch (WEL) bit in the Status Register to a 0. The Write Disable command is
entered by driving CS# low, shifting the instruction code “04h” into the SI pin and then driving CS# high. Note that the WEL bit is
automatically reset after Power-up and upon completion of the Write Status Registers, Erase / Program Security Registers, Page
Program, Sector Erase, Block Erase and Chip Erase commands.
Figure 37. Write Disable (WRDI 04h) Command Sequence
CS#
SCK
SI
7
6
5
4
3
2
1
0
SO
Phase
8.1.5
es
ig
n
Instruction
Write Status Registers (01h)
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The Write Status Registers command allows the Status Registers to be written. Only non-volatile Status Register bits SRP0, SEC,
TB, BP2, BP1, BP0 (SR1[7:2]) CMP, LB3, LB2, LB1, QE, SRP1 (SR2[6:0]), and the volatile bits SR3[6:0] can be written. All other
Status Register bit locations are read-only and will not be affected by the Write Status Registers command. LB3-0 are non-volatile
OTP bits; once each is set to 1, it can not be cleared to 0. The Status Register bits are shown in Section 6.5, Status Registers
on page 49. Any reserved bits should only be written to their default value.
ed
fo
To write non-volatile Status Register bits, a standard Write Enable (06h) command must previously have been executed for the
device to accept the Write Status Registers Command (Status Register bit WEL must equal 1). Once write enabled, the command is
entered by driving CS# low, sending the instruction code “01h”, and then writing the Status Register data bytes as illustrated in
Figure 38.
ec
om
m
en
d
To write volatile Status Register bits, a Write Enable for Volatile Status Register (50h) command must have been executed prior to
the Write Status Registers command (Status Register bit WEL remains 0). However, SRP1 and LB3, LB2, LB1, LB0 can not be
changed because of the OTP protection for these bits. Upon power-off, the volatile Status Register bit values will be lost, and the
non-volatile Status Register bit values will be restored when power on again.
R
To complete the Write Status Registers command, the CS# pin must be driven high after the eighth bit of a data value is clocked in
(CS# must be driven high on an 8-bit boundary). If this is not done the Write Status Registers command will not be executed. If CS#
is driven high after the eighth clock the CMP and QE bits will be cleared to 0 if the SRP1 bit is 0. The SR2 bits are unaffected if SRP1
is 1. If CS# is driven high after the eighth or sixteenth clock, the SR3 bits will not be affected.
N
ot
During non-volatile Status Register write operation (06h combined with 01h), after CS# is driven high at the end of the Write Status
Registers command, the self-timed Write Status Registers operation will commence for a time duration of tW (see Section 4.8, AC
Electrical Characteristics on page 25). While the Write Status Registers operation is in progress, the Read Status Register
command may still be accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Write Status Registers operation
and a 0 when the operation is finished and ready to accept other commands again. After the Write Status Registers operation has
finished, the Write Enable Latch (WEL) bit in the Status Register will be cleared to 0.
During volatile Status Register write operation (50h combined with 01h), after CS# is driven high at the end of the Write Status
Registers command, the Status Register bits will be updated to the new values within the time period of tSHSL2 (see Section 4.8, AC
Electrical Characteristics on page 25). BUSY bit will remain 0 during the Status Register bit refresh period. Refer to Section 6.5,
Status Registers on page 49 for detailed Status Register bit descriptions.
Figure 38. Write Status Registers Command Sequence Diagram
CS#
SCK
SI
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
SO
Phase
Instruction
Document Number: 002-00497 Rev. *H
Input Status Register-1
Input Status Register-2
Input Status Register-3
Page 66 of 90
S25FL116K/S25FL132K/S25FL164K
8.2
8.2.1
Program and Erase Commands
Page Program (02h)
The Page Program command allows from one byte to 256 bytes (a page) of data to be programmed at previously erased (FFh)
memory locations. A Write Enable command must be executed before the device will accept the Page Program Command (Status
Register bit WEL= 1). The command is initiated by driving the CS# pin low then shifting the instruction code “02h” followed by a 24bit address (A23-A0) and at least one data byte, into the SI pin. The CS# pin must be held low for the entire length of the command
while data is being sent to the device. The Page Program command sequence is shown in Figure 39, Page Program Command
Sequence on page 67.
es
ig
n
If an entire 256-byte page is to be programmed, the last address byte (the 8 least significant address bits) should be set to 0. If the
last address byte is not zero, and the number of clocks exceed the remaining page length, the addressing will wrap to the beginning
of the page. In some cases, less than 256 bytes (a partial page) can be programmed without having any effect on other bytes within
the same page. One condition to perform a partial page program is that the number of clocks can not exceed the remaining page
length. If more than 256 bytes are sent to the device the addressing will wrap to the beginning of the page and overwrite previously
sent data.
fo
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ew
D
As with the write and erase commands, the CS# pin must be driven high after the eighth bit of the last byte has been latched. If this
is not done the Page Program command will not be executed. After CS# is driven high, the self-timed Page Program command will
commence for a time duration of tPP (Section 4.8, AC Electrical Characteristics on page 25). While the Page Program cycle is in
progress, the Read Status Register command may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1
during the Page Program cycle and becomes a 0 when the cycle is finished and the device is ready to accept other commands
again. After the Page Program cycle has finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Page
Program command will not be executed if the addressed page is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and
BP0) bits.
ed
Figure 39. Page Program Command Sequence
en
d
CS#
SCK
7
6
5
4
3
2
1
0 23
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om
SO
Phase
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Instruction
Address
Input Data1
Input Data2
Sector Erase (20h)
R
8.2.2
5
m
SI
N
ot
The Sector Erase command sets all memory within a specified sector (4 kbytes) to the erased state of all 1’s (FFh). A Write Enable
command must be executed before the device will accept the Sector Erase command (Status Register bit WEL must equal 1). The
command is initiated by driving the CS# pin low and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0)
See Supply and Signal Ground (VSS) on page 10. The Sector Erase command sequence is shown in Figure 40 on page 67.
The CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Sector Erase command
will not be executed. After CS# is driven high, the self-timed Sector Erase command will commence for a time duration of tSE.
Section 4.8, AC Electrical Characteristics on page 25 While the Sector Erase cycle is in progress, the Read Status Register
command may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and
becomes a 0 when the cycle is finished and the device is ready to accept other commands again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase command will not be executed if
the addressed sector is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (Table 25, FL132K Block
Protection (CMP = 0) on page 53).
Figure 40. Sector Erase Command Sequence
CS#
SCK
SI
7
6
5
4
3
2
1
0
23
1
0
SO
Phase
Document Number: 002-00497 Rev. *H
Instruction
Address
Page 67 of 90
S25FL116K/S25FL132K/S25FL164K
8.2.3
64-kB Block Erase (D8h)
The Block Erase command sets all memory within a specified block (64 kbytes) to the erased state of all 1s (FFh). A Write Enable
command must be executed before the device will accept the Block Erase command (Status Register bit WEL must equal 1). The
command is initiated by driving the CS# pin low and shifting the instruction code “D8h” followed a 24-bit block address (A23-A0)
See Supply and Signal Ground (VSS) on page 10. The Block Erase command sequence is shown in Figure 41.
n
The CS# pin must be driven high after the eighth bit of the last byte has been latched. If this is not done the Block Erase command
will not be executed. After CS# is driven high, the self-timed Block Erase command will commence for a time duration of tBE (see
Section 4.8, AC Electrical Characteristics on page 25). While the Block Erase cycle is in progress, the Read Status Register
command may still be accessed for checking the status of the BUSY bit. The BUSY bit is a 1 during the Block Erase cycle and
becomes a 0 when the cycle is finished and the device is ready to accept other commands again. After the Block Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Block Erase command will not be executed if the
addressed sector is protected by the Block Protect (CMP, SEC, TB, BP2, BP1, and BP0) bits (see Section 6.5, Status Registers
on page 49).
es
ig
Figure 41. 64-kB Block Erase Command Sequence
CS#
7
6
5
4
3
2
1
0
ew
SI
D
SCK
Phase
1
rN
SO
23
Address
Chip Erase (C7h / 60h)
en
d
8.2.4
ed
fo
Instruction
0
ec
om
m
The Chip Erase command sets all memory within the device to the erased state of all 1’s (FFh). A Write Enable command must be
executed before the device will accept the Chip Erase command (Status Register bit WEL must equal 1). The command is initiated
by driving the CS# pin low and shifting the instruction code “C7h” or “60h”. The Chip Erase command sequence is shown in
Figure 42.
N
ot
R
The CS# pin must be driven high after the eighth bit has been latched. If this is not done the Chip Erase command will not be
executed. After CS# is driven high, the self-timed Chip Erase command will commence for a time duration of tCE (Section 4.8, AC
Electrical Characteristics on page 25). While the Chip Erase cycle is in progress, the Read Status Register command may still be
accessed to check the status of the BUSY bit. The BUSY bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and
the device is ready to accept other commands again. After the Chip Erase cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Chip Erase command will not be executed if any page is protected by the Block Protect (CMP,
SEC, TB, BP2, BP1, and BP0) bits (see Section 6.5, Status Registers on page 49).
Figure 42. Chip Erase Command Sequence
CS#
SCK
SI
7
6
5
4
3
2
1
0
SO
Phase
Document Number: 002-00497 Rev. *H
Instruction
Page 68 of 90
S25FL116K/S25FL132K/S25FL164K
8.2.5
Erase / Program Suspend (75h)
The Erase / Program Suspend command allows the system to interrupt a Sector or Block Erase operation, then read from or
program data to any other sector. The Erase / Program Suspend command also allows the system to interrupt a Page Program
operation and then read from any other page or erase any other sector or block. The Erase / Program Suspend command sequence
is shown in Figure 43, Erase / Program Suspend Command Sequence on page 70.
The Write Status Registers command (01h), Program Security Registers (42h), and Erase commands (20h, D8h, C7h, 60h, 44h) are
not allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If written during the Chip
Erase operation, the Erase Suspend command is ignored. The Write Status Registers command (01h), Erase Security Registers
(44h), and Program commands (02h, 32h, 42h) are not allowed during Program Suspend. Program Suspend is valid only during the
Page Program operation.
Command Allowed
Instruction
Program or Erase
Read Data
03h
Program or Erase
Fast Read
Program or Erase
Fast Read Dual Output
Program or Erase
Fast Read Quad Output
Program or Erase
Fast Read Dual I/O
Program or Erase
Fast Read Quad I/O
EBh
Program or Erase
Continuous Read Mode Reset
FFh
Program or Erase
Read Status Register-1
05h
Program or Erase
Read Status Register-2
35h
ed
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ew
D
es
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Operation Suspended
rN
Table 36. Commands Accepted During Suspend
Program or Erase
Program
ec
om
Program or Erase
6Bh
BBh
06h
Page Program
02h
Sector Erase
20h
Block Erase
D8h
Erase / Program Resume
7Ah
m
Program
3Bh
Write Enable
en
d
Erase
0Bh
N
ot
R
The Erase / Program Suspend command 75h will be accepted by the device only if the SUS bit in the Status Register equals to 0
and the BUSY bit equals to 1 while a Sector or Block Erase or a Page Program operation is on-going. If the SUS bit equals to 1 or
the BUSY bit equals to 0, the Suspend command will be ignored by the device. Program or Erase command for the sector that is
being suspended will be ignored.
A maximum of time of tSUS (Section 4.8, AC Electrical Characteristics on page 25) is required to suspend the erase or program
operation. The BUSY bit in the Status Register will be cleared from 1 to 0 within tSUS and the SUS bit in the Status Register will be
set from 0 to 1 immediately after Erase / Program Suspend. For a previously resumed Erase / Program operation, it is also required
that the Suspend command 75h is not issued earlier than a minimum of time of tSUS following the preceding Resume command 7Ah.
Unexpected power off during the Erase / Program suspend state will reset the device and release the suspend state. SUS bit in the
Status Register will also reset to 0. The data within the page, sector or block that was being suspended may become corrupted. It is
recommended for the user to implement system design techniques to prevent accidental power interruption, provide non-volatile
tracking of in process program or erase commands, and preserve data integrity by evaluating the non-volatile program or erase
tracking information during each system power up in order to identify and repair (re-erase and re-program) any improperly
terminated program or erase operations.
Document Number: 002-00497 Rev. *H
Page 69 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 43. Erase / Program Suspend Command Sequence
tSUS
CS#
SCK
SI
7 6 5 4 3
2 1 0
7 6 5
4 3 2 1 0
7 6 5
SO
7 6 5
Phase
Suspend Instruction
Read Status Instruction
Phase
8.2.6
4 3 2 1 0
4 3 2 1 0
Status
Instr. During Suspend
Repeat Status Read Until Suspended
Erase / Program Resume (7Ah)
es
ig
n
The Erase / Program Resume command “7Ah” must be written to resume the Sector or Block Erase operation or the Page Program
operation after an Erase / Program Suspend. The Resume command “7Ah” will be accepted by the device only if the SUS bit in the
Status Register equals to 1 and the BUSY bit equals to 0. After the Resume command is issued the SUS bit will be cleared from 1 to
0 immediately, the BUSY bit will be set from 0 to 1 within 200 ns and the Sector or Block will complete the erase operation or the
page will complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume command “7Ah” will be
ignored by the device. The Erase / Program Resume command sequence is shown in Figure 44.
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D
It is required that a subsequent Erase / Program Suspend command not to be issued within a minimum of time of “tSUS” following a
Resume command.
rN
Figure 44. Erase / Program Resume Command Sequence
fo
CS#
SCK
7
6
5
2
1
0
Instruction
ec
om
8.3.1
Read Commands
3
m
Phase
8.3
4
en
d
SO
ed
SI
Read Data (03h)
N
ot
R
The Read Data command allows one or more data bytes to be sequentially read from the memory. The command is initiated by
driving the CS# pin low and then shifting the instruction code “03h” followed by a 24-bit address (A23-A0) into the SI pin. The code
and address bits are latched on the rising edge of the SCK pin. After the address is received, the data byte of the addressed memory
location will be shifted out on the SO pin at the falling edge of SCK with most significant bit (MSB) first. The address is automatically
incremented to the next higher address after each byte of data is shifted out allowing for a continuous stream of data. This means
that the entire memory can be accessed with a single command as long as the clock continues. The command is completed by
driving CS# high.
The Read Data command sequence is shown in Figure 45. If a Read Data command is issued while an Erase, Program or Write
cycle is in process (BUSY=1) the command is ignored and will not have any effects on the current cycle. The Read Data command
allows clock rates from DC to a maximum of fR (see Section 4.8, AC Electrical Characteristics on page 25).
Figure 45. Read Data Command Sequence
CS#
SCK
SI
7
6
5
4
3
2
1
0 23
1
0
SO
Phase
7
Instruction
Document Number: 002-00497 Rev. *H
Address
6
5
4
3
Data 1
2
1
0
7
6
5
4
3
2
1
0
Data 2
Page 70 of 90
S25FL116K/S25FL132K/S25FL164K
8.3.2
Fast Read (0Bh)
The Fast Read command is similar to the Read Data command except that it can operate at higher frequency than the traditional
Read Data command. This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in Figure 46. The
dummy clocks allow the devices internal circuits additional time for setting up the initial address. During the dummy clocks the data
value on the SI pin is a “don’t care.”
When variable read latency is enabled, the number of dummy cycles is set by the Latency Control value in SR3 to optimize the
latency for the frequency in use. See. Table 30, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to 3.6V
on page 57.
Figure 46. Fast Read Command Sequence
CS#
SCK
6
5
4
3
2
1
0 23
1
0
7
Address
Dummy Cycles
5
4
3
2
1
0
Data 1
Fast Read Dual Output (3Bh)
ew
8.3.3
Instruction
6
D
Phase
n
7
es
ig
SI
SO
fo
rN
The Fast Read Dual Output (3Bh) command is similar to the standard Fast Read (0Bh) command except that data is output on two
pins; IO0 and IO1. This allows data to be transferred from the S25FL1-K at twice the rate of standard SPI devices. The Fast Read
Dual Output command is ideal for quickly downloading code from flash to RAM upon power-up or for applications that cache codesegments to RAM for execution.
en
d
ed
Similar to the Fast Read command, the Fast Read Dual Output command can operate at higher frequency than the traditional Read
Data command. This is accomplished by adding eight “dummy” clocks after the 24-bit address as shown in Figure 47. The dummy
clocks allow the device's internal circuits additional time for setting up the initial address. The input data during the dummy clocks is
“don’t care.” However, the IO0 pin should be high-impedance prior to the falling edge of the first data out clock.
ec
om
m
When variable read latency is enabled, the number of dummy cycles is set by the Latency Control value in SR3 to optimize the
latency for the frequency in use. See. Table 30, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to 3.6V
on page 57.
R
Figure 47. Fast Read Dual Output Command Sequence
ot
CS#
IO0
N
SCK
7
6
5
4
3
2
1
0 23 22 21 0
IO1
Phase
Instruction
Document Number: 002-00497 Rev. *H
Address
Dummy
6
4
2
0
6
4
2
0
7
5
3
1
7
5
3
1
Data 1
Data 2
Page 71 of 90
S25FL116K/S25FL132K/S25FL164K
8.3.4
Fast Read Quad Output (6Bh)
The Fast Read Quad Output (6Bh) command is similar to the Fast Read Dual Output (3Bh) command except that data is output on
four pins, IO0, IO1, IO2, and IO3. A Quad enable of Status Register-2 must be executed before the device will accept the Fast Read
Quad Output Command (Status Register bit QE must equal 1). The Fast Read Quad Output Command allows data to be transferred
from the S25FL1-K at four times the rate of standard SPI devices.
The Fast Read Quad Output command can operate at higher frequency than the traditional Read Data command. This is
accomplished by adding eight “dummy” clocks after the 24-bit address as shown in Figure 48. The dummy clocks allow the device's
internal circuits additional time for setting up the initial address. The input data during the dummy clocks is “don’t care.” However, the
IO pins should be high-impedance prior to the falling edge of the first data out clock.
When variable read latency is enabled, the number of dummy cycles is set by the Latency Control value in SR3 to optimize the
latency for the frequency in use. See. Table 30, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to 3.6V
on page 57.
es
ig
n
Figure 48. Fast Read Quad Output Command Sequence
CS#
7
6
5
4
3
2
1
0 23
1
0
ew
IO0
D
SCK
IO1
rN
IO2
Address
Fast Read Dual I/O (BBh)
Dummy
4
0
4
0
4
0
4
0
4
5
1
5
1
5
1
5
1
5
1
5
6
2
6
2
6
2
6
2
6
2
6
7
3
7
3
7
3
7
3
7
3
7
D1
D2
D3
D4
D5
ed
8.3.5
Instruction
0
en
d
Phase
fo
IO3
4
ec
om
m
The Fast Read Dual I/O (BBh) command allows for improved random access while maintaining two IO pins, IO0 and IO1. It is similar
to the Fast Read Dual Output (3Bh) command but with the capability to input the Address bits (A23-0) two bits per clock. This
reduced command overhead may allow for code execution (XIP) directly from the Dual SPI in some applications.
Fast Read Dual I/O with “Continuous Read Mode”
ot
R
The Fast Read Dual I/O command can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0)
after the input Address bits (A23-0), as shown in Figure 49. The upper nibble of the (M7-4) controls the length of the next Fast Read
Dual I/O command through the inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t
care (“x”). However, the IO pins should be high-impedance prior to the falling edge of the first data out clock.
N
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Dual I/O command (after CS# is raised and then lowered)
does not require the BBh instruction code, as shown in Figure 50. This reduces the command sequence by eight clocks and allows
the Read address to be immediately entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to
(1,0), the next command (after CS# is raised and then lowered) requires the first byte instruction code, thus returning to normal
operation. A “Continuous Read Mode” Reset command can also be used to reset (M7-0) before issuing normal commands (see
See Continuous Read Mode Reset (FFh or FFFFh) on page 75.).
When variable read latency is enabled, the number of latency (Mode + Dummy) cycles is set by the Latency Control value in SR3 to
optimize the latency for the frequency in use. See Table 30, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to
3.6V on page 57. Note that the legacy Read Dual I/O command has four Mode cycles and no Dummy cycles for a total of four
latency cycles, Enabling the variable read latency allows for the addition of more read latency to enable higher frequency operation
of the Dual I/O command.
Document Number: 002-00497 Rev. *H
Page 72 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 49. Fast Read Dual I/O Command Sequence (Initial command or previous M5-4 10)
CS#
SCK
IO0
7
6
5
4
3
2
1
0
IO1
Phase
22
2
0
6
4
2
0
6
4
2
0
6
4
2
0
23
3
1
7
5
3
1
7
5
3
1
7
5
3
1
Instruction
Address
Mode
Dummy
Data 1
Data 2
Note:
1. Least significant 4 bits of Mode are don’t care and it is optional for the host to drive these bits. The host may turn off drive during these cycles to increase bus turn
around time between Mode bits from host and returning data from the memory.
n
Figure 50. Fast Read Dual I/O Command Sequence (Previous command set M5-4 = 10)
es
ig
CS#
6
4
2
0
22
2
0
6
4
2
0
6
4
2
0
6
4
2
0
IO1
7
5
3
1
23
3
1
7
5
3
1
7
5
3
1
7
5
3
1
Address
Mode
Dummy
Data 1
Data 2
Fast Read Quad I/O (EBh)
fo
8.3.6
Data N
rN
Phase
ew
IO0
D
SCK
m
en
d
ed
The Fast Read Quad I/O (EBh) command is similar to the Fast Read Dual I/O (BBh) command except that address and data bits are
input and output through four pins IO0, IO1, IO2 and IO3 and four Dummy clock are required prior to the data output. The Quad I/O
dramatically reduces instruction overhead allowing faster random access for code execution (XIP) directly from the Quad SPI. The
Quad Enable bit (QE) of Status Register-2 must be set to enable the Fast Read Quad I/O Command.
Fast Read Quad I/O with “Continuous Read Mode”
R
ec
om
The Fast Read Quad I/O command can further reduce instruction overhead through setting the “Continuous Read Mode” bits (M7-0)
after the input Address bits (A23-0), as shown in Figure 51, Fast Read Quad I/O Command Sequence (Initial command or previous
M5-4 10) on page 74. The upper nibble of the (M7-4) controls the length of the next Fast Read Quad I/O command through the
inclusion or exclusion of the first byte instruction code. The lower nibble bits of the (M3-0) are don’t care (“x”). However, the IO pins
should be high-impedance prior to the falling edge of the first data out clock.
N
ot
If the “Continuous Read Mode” bits M5-4 = (1,0), then the next Fast Read Quad I/O command (after CS# is raised and then lowered)
does not require the EBh instruction code, as shown in Figure 52, Fast Read Quad I/O Command Sequence (Previous command
set M5-4 = 10) on page 74. This reduces the command sequence by eight clocks and allows the Read address to be immediately
entered after CS# is asserted low. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0), the next command (after CS# is
raised and then lowered) requires the first byte instruction code, thus returning to normal operation. A “Continuous Read Mode”
Reset command can also be used to reset (M7-0) before issuing normal commands (see Section 8.4.3, Continuous Read Mode
Reset (FFh or FFFFh) on page 75).
When variable read latency is enabled, the number of latency (Mode + Dummy) cycles is set by the Latency Control value in SR3 to
optimize the latency for the frequency in use. See. Table 30, Latency Cycles Versus Frequency for -40°C to 85°C/105°C at 2.7V to
3.6V on page 57. Note that the legacy Read Quad I/O command has two Mode cycles plus four Dummy cycles for a total of six
latency cycles, Enabling the variable read latency allows for the addition of more read latency to enable higher frequency operation
of the Quad I/O command.
Document Number: 002-00497 Rev. *H
Page 73 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 51. Fast Read Quad I/O Command Sequence (Initial command or previous M5-4 10)
CS#
SCK
IO0
20
4
0
4
0
4
0
4
0
4
0
4
0
IO1
7
6
5
4
3
2
1
0
21
5
1
5
1
5
1
5
1
5
1
5
1
IO2
22
6
2
6
2
6
2
6
2
6
2
6
2
IO3
23
7
3
7
3
7
3
7
3
7
3
7
3
Phase
Instruction
Address Mode
Dummy
D1
D2
D3
D4
Note:
1. Least significant 4 bits of Mode are don’t care and it is optional for the host to drive these bits. The host may turn off drive during these cycles to increase bus turn
around time between Mode bits from host and returning data from the memory.
es
ig
n
Figure 52. Fast Read Quad I/O Command Sequence (Previous command set M5-4 = 10)
CS#
4
0
20
4
0
4
0
IO1
5
1
5
1
21
5
1
5
1
IO2
6
2
6
2
22
6
2
6
2
IO3
7
3
7
3
23
7
3
7
3
DN-1
DN
Address
0
4
0
6
4
2
0
5
1
5
1
7
5
3
1
6
2
6
1
7
5
3
1
7
3
7
1
7
5
3
1
Mode
Dummy
D1
D2
D3
D4
ed
Phase
4
ew
0
rN
4
fo
IO0
D
SCK
Fast Read Quad I/O with “16 / 32 / 64-Byte Wrap Around”
ec
om
m
en
d
The Fast Read Quad I/O command can also be used to access a specific portion within a page by issuing a “Set Burst with Wrap”
command prior to EBh. The “Set Burst with Wrap” command can either enable or disable the “Wrap Around” feature for the following
EBh commands. When “Wrap Around” is enabled, the data being accessed can be limited to either a 16 / 32 / 64-byte section of
data. The output data starts at the initial address specified in the command, once it reaches the ending boundary of the 16 / 32 / 64byte section, the output will wrap around to the beginning boundary automatically until CS# is pulled high to terminate the command.
R
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address and then fill the cache afterwards
within a fixed length (16 / 32 / 64-bytes) of data without issuing multiple read commands.
N
ot
The “Set Burst with Wrap” command allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used to enable or disable the “Wrap
Around” operation while W6-5 are used to specify the length of the wrap around section within a page. See Section 8.3.7, Set Burst
with Wrap (77h) on page 74.
8.3.7
Set Burst with Wrap (77h)
The Set Burst with Wrap (77h) command is used in conjunction with “Fast Read Quad I/O” commands to access a fixed length and
alignment of 8 / 16 / 32 / 64-bytes of data. Certain applications can benefit from this feature and improve the overall system code
execution performance. This command loads the SR3 bits.
Similar to a Quad I/O command, the Set Burst with Wrap command is initiated by driving the CS# pin low and then shifting the
instruction code “77h” followed by 24-dummy bits and 8 “Wrap Bits”, W7-0. The command sequence is shown in Figure 53, Set
Burst with Wrap Command Sequence on page 75. Wrap bit W7 and the lower nibble W3-0 are not used. See Status Register-3
(SR3[6:4]) for the encoding of W6-W4 in Section 6.5, Status Registers on page 49.
Once W6-4 is set by a Set Burst with Wrap command, all the following “Fast Read Quad I/O” commands will use the W6-4 setting to
access the 8 / 16 / 32 / 64-byte section of data. Note, Status Register-2 QE bit (SR2[1]) must be set to 1 in order to use the Fast
Read Quad I/O and Set Burst with Wrap commands. To exit the “Wrap Around” function and return to normal read operation,
another Set Burst with Wrap command should be issued to set W4 = 1. The default value of W4 upon power on is 1. In the case of a
system Reset while W4 = 0, it is recommended that the controller issues a Software Reset command or a Set Burst with Wrap
command to reset W4 = 1 prior to any normal Read commands since S25FL1-K does not have a hardware Reset Pin.
Document Number: 002-00497 Rev. *H
Page 74 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 53. Set Burst with Wrap Command Sequence
CS#
SCK
IO0
.X
.X
.X
.X
.X
.X
W4
.X
IO1
7
6
5
4
3
2
1
0
.X
.X
.X
.X
.X
.X
W5
.X
IO2
.X
.X
.X
.X
.X
.X
W6
.X
.X
.X
.X
.X
.X
.X
.X
.X
IO3
Phase
8.4
Instruction
Don’t Care
Wrap
Reset Commands
es
ig
n
Software controlled Reset commands restore the device to its initial power up state, by reloading volatile registers from non-volatile
default values. If a software reset is initiated during a Erase, Program or writing of a Register operation the data in that Sector, Page
or Register is not stable, the operation that was interrupted needs to be initiated again.
ew
D
When the device is in Deep Power-Down mode it is protected from a software reset, the software reset commands are ignored and
have no effect. To reset the device send the Release Power down command (ABh) and after time duration of tRES1 the device will
resume normal operation and the Software reset commands will be accepted.
rN
A software reset is initiated by the Software Reset Enable command (66h) followed by Software Reset command (99h) and then
executed when CS# is brought high after tRCH time at the end of the Software Reset instruction and requires tRST time before
executing the next Instruction after the Software Reset. See Figure 27, Software Reset Input Timing on page 28
ed
fo
Note: The tRCH is a Cypress specific parameter and CS# must be brought high after tRCH time, if not the Software Reset will not be
executed.
en
d
Figure 54. Software Reset Command Sequence
CS#
ec
om
SI
m
SCK
7
6
3
2
1
0
Instruction
Software Reset Enable (66h)
N
8.4.1
4
ot
Phase
R
SO
5
The Reset Enable (66h) command is required immediately before a software reset command (99h) such that a software reset is a
sequence of the two commands. Any command other than Reset (99h) following the Reset Enable (66h) command, will clear the
reset enable condition and prevent a later RST command from being recognized.
8.4.2
Software Reset (99h)
The Reset (99h) command immediately following a Reset Enable (66h) command, initiates the software reset process. Any
command other than Reset (99h) following the Reset Enable (66h) command, will clear the reset enable condition and prevent a
later Reset (99h) command from being recognized.
8.4.3
Continuous Read Mode Reset (FFh or FFFFh)
The “Continuous Read Mode” bits are used in conjunction with “Fast Read Dual I/O” and “Fast Read
Quad I/O” commands to provide the highest random Flash memory access rate with minimum SPI instruction overhead, thus
allowing more efficient XIP (execute in place) with this device family. A device that is in a continuous high performance read mode
may not recognize any normal SPI command or the software reset command may not be recognized by the device. It is
recommended to use the Continuous Read Mode Reset command after a system Power on Reset or, before sending a software
reset, to ensure the device is released from continuous high performance read mode.
Document Number: 002-00497 Rev. *H
Page 75 of 90
S25FL116K/S25FL132K/S25FL164K
The “Continuous Read Mode” bits M7-0 are set by the Dual/Quad I/O Read commands. M5-4 are used to control whether the 8-bit
SPI instruction code (BBh or EBh) is needed or not for the next command. When M5-4 = (1,0), the next command will be treated the
same as the current Dual/Quad I/O Read command without needing the 8-bit instruction code; when M5-4 do not equal to (1,0), the
device returns to normal SPI command mode, in which all commands can be accepted. M7-6 and M3-0 are reserved bits for future
use, either 0 or 1 values can be used.
The Continuous Read Mode Reset command (FFh or FFFFh) can be used to set M4 = 1, thus the device will release the Continuous
Read Mode and return to normal SPI operation, as shown in Figure 55.
Figure 55. Continuous Read Mode Reset for Fast Read Dual or Quad I/O
CS#
SCK
IO0
FFFFh
IO1
IO3
DIO_Phase
Optional FFh
QIO_Phase
Optional FFh
D
Mode Bit Reset for Quad I/O
es
ig
n
IO2
ew
Notes:
1. To reset “Continuous Read Mode” during Quad I/O operation, only eight clocks are needed. The instruction is “FFh”.
8.4.4
Host System Reset Commands
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2. To reset “Continuous Read Mode” during Dual I/O operation, sixteen clocks are needed to shift in instruction “FFFFh”.
m
en
d
ed
fo
Since S25FL1-K does not have a hardware Reset pin, if the host system memory controller resets, without a complete power-down
and power-up sequence, while an S25FL1-K device is set to Continuous Mode Read, the S25FL1-K device will not recognize any
initial standard SPI commands from the controller. To address this possibility, it is recommended to issue a Continuous Read Mode
Reset (FFFFh) command as the first command after a system Reset. Doing so will release the device from the Continuous Read
Mode and allow Standard SPI commands to be recognized. See Section 8.4.3, Continuous Read Mode Reset (FFh or FFFFh)
on page 75.
ec
om
If Burst Wrap Mode is used, it is also recommended to issue a Set Burst with Wrap (77h) command that sets the W4 bit to one as the
second command after a system Reset. Doing so will release the device from the Burst Wrap Mode and allow standard sequential
read SPI command operation. See Section 8.3.7, Set Burst with Wrap (77h) on page 74.
N
ot
R
Issuing these commands immediately after a non-power-cycle (warm) system reset, ensures the device operation is consistent with
the power-on default device operation. The same commands may also be issued after device power-on (cold) reset so that system
reset code is the same for warm or cold reset.
Document Number: 002-00497 Rev. *H
Page 76 of 90
S25FL116K/S25FL132K/S25FL164K
8.5
8.5.1
ID and Security Commands
Deep-Power-Down (B9h)
Although the standby current during normal operation is relatively low, standby current can be further reduced with the Deep-PowerDown command. The lower power consumption makes the Deep-Power-Down (DPD) command especially useful for battery
powered applications (see ICC1 and ICC2 in Section 4.8, AC Electrical Characteristics on page 25). The command is initiated by
driving the CS# pin low and shifting the instruction code “B9h” as shown in Figure 56.
es
ig
n
The CS# pin must be driven high after the eighth bit has been latched. If this is not done the Deep-Power-Down command will not be
executed. After CS# is driven high, the power-down state will entered within the time duration of tDP (Section 4.8, AC Electrical
Characteristics on page 25). While in the power-down state only the Release from Deep-Power-Down / Device ID command, which
restores the device to normal operation, will be recognized. All other commands are ignored. This includes the Read Status Register
command, which is always available during normal operation. Ignoring all but one command also makes the Power Down state a
useful condition for securing maximum write protection. The device always powers-up in the normal operation with the standby
current of ICC1.
D
Figure 56. Deep Power-Down Command Sequence
ew
CS#
SCK
7
6
5
4
2
1
0
fo
Phase
ed
Instruction
Release from Deep-Power-Down / Device ID (ABh)
en
d
8.5.2
3
rN
SI
SO
m
The Release from Deep-Power-Down / Device ID command is a multi-purpose command. It can be used to release the device from
the deep-power-down state, or obtain the devices electronic identification (ID) number.
R
ec
om
To release the device from the deep-power-down state, the command is issued by driving the CS# pin low, shifting the instruction
code “ABh” and driving CS# high as shown in Figure 57. Release from deep-power-down will take the time duration of tRES1
(Section 4.8, AC Electrical Characteristics on page 25) before the device will resume normal operation and other commands are
accepted. The CS# pin must remain high during the tRES1 time duration.
N
ot
When used only to obtain the Device ID while not in the deep power-down state, the command is initiated by driving the CS# pin low
and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID bits are then shifted out on the falling edge of
SCK with most significant bit (MSB) first. The Device ID values for the S25FL1-K is listed in Section 6.6.1, Legacy Device
Identification Commands on page 59. The Device ID can be read continuously. The command is completed by driving CS# high.
When used to release the device from the deep-power-down state and obtain the Device ID, the command is the same as previously
described, and shown in Figure 58, except that after CS# is driven high it must remain high for a time duration of tRES2. After this
time duration the device will resume normal operation and other commands will be accepted. If the Release from Deep-Power-Down
/ Device ID command is issued while an Erase, Program or Write cycle is in process (when BUSY equals 1) the command is ignored
and will not have any effects on the current cycle.
Figure 57. Release from Deep-Power-Down Command Sequence
CS#
SCK
SI
7
6
5
4
3
2
1
0
SO
Phase
Document Number: 002-00497 Rev. *H
Instruction
Page 77 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 58. Read Electronic Signature (RES ABh) Command Sequence
CS#
SCK
SI
7
6
5
4
3
2
1
0
23
1
0
SO
7
Phase
8.5.3
Instruction (ABh)
6
5
4
Dummy
3
2
1
0
Device ID
Read Manufacturer / Device ID (90h)
The Read Manufacturer / Device ID command is an alternative to the Release from Deep-Power-Down / Device ID command that
provides both the JEDEC assigned manufacturer ID and the specific device ID.
rN
ew
D
es
ig
n
The Read Manufacturer / Device ID command is very similar to the Release from Deep-Power-Down / Device ID command. The
command is initiated by driving the CS# pin low and shifting the instruction code “90h” followed by a 24-bit address (A23-A0) of
000000h. After which, the Manufacturer ID and the Device ID are shifted out on the falling edge of SCK with most significant bit
(MSB) first as shown in Figure 59. The Device ID values for the S25FL1-K is listed in Section 6.6.1, Legacy Device Identification
Commands on page 59. If the 24-bit address is initially set to 000001h the Device ID will be read first and then followed by the
Manufacturer ID. The Manufacturer and Device IDs can be read continuously, alternating from one to the other. The command is
completed by driving CS# high.
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Figure 59. READ_ID (90h) Command Sequence
SCK
7
6
5
4
3
2
1
0 23
SO
0
7
Phase
Address
m
Instruction (90h)
6
5
4
3
2
1
0
7
6
5
Manufacturer ID
4
3
2
1
0
Device ID
ec
om
8.5.4
1
en
d
SI
ed
CS#
Read JEDEC ID (9Fh)
N
ot
R
For compatibility reasons, the S25FL1-K provides several commands to electronically determine the identity of the device. The Read
JEDEC ID command is compatible with the JEDEC standard for SPI compatible serial flash memories that was adopted in 2003.
The command is initiated by driving the CS# pin low and shifting the instruction code “9Fh”. The JEDEC assigned Manufacturer ID
byte and two Device ID bytes, Memory Type (ID15-ID8) and Capacity (ID7-ID0) are then shifted out on the falling edge of SCK with
most significant bit (MSB) first as shown in Figure 60. For memory type and capacity values refer to Section 6.6.1, Legacy Device
Identification Commands on page 59.
Figure 60. Read JEDEC ID Command Sequence
CS#
SCK
SI
7
6
5
4
3
SO
Phase
2
1
0
7
Instruction
Document Number: 002-00497 Rev. *H
6
5
4
3
Data 1
2
1
0
7
6
5
4
3
2
1
0
Data N
Page 78 of 90
S25FL116K/S25FL132K/S25FL164K
8.5.5
Read SFDP Register / Read Unique ID Number (5Ah)
The Read SFDP command is initiated by driving the CS# pin low and shifting the instruction code “5Ah” followed by a 24-bit address
(A23-A0) into the SI pin. Eight “dummy” clocks are also required before the SFDP register contents are shifted out on the falling
edge of the 40th SCK with most significant bit (MSB) first as shown in Figure 61. For SFDP register values and descriptions, refer to
Table 6.6.2, Serial Flash Discoverable Parameters (SFDP) on page 59.
Note: A23-A8 = 0; A7-A0 are used to define the starting byte address for the 256-byte SFDP Register.
The 5Ah command can also be used to access the Read Unique ID Number. This is a factory-set read-only 8-byte number that is
unique to each S25FL1-K device. The ID number can be used in conjunction with user software methods to help prevent copying or
cloning of a system.
Figure 61. Read SFDP Register Command Sequence
n
CS#
7
6
5
4
3
2
1
0 23
1
0
SO
7
Address
Dummy Cycles
4
3
2
1
0
Data 1
Erase Security Registers (44h)
rN
8.5.6
Instruction
5
ew
Phase
6
D
SI
es
ig
SCK
00h
Security Register-2
00h
m
A23-16
ec
om
Address
Security Register-1
en
d
ed
fo
The Erase Security Register command is similar to the Sector Erase command. A Write Enable command must be executed before
the device will accept the Erase Security Register Command (Status Register bit WEL must equal 1). The command is initiated by
driving the CS# pin low and shifting the instruction code “44h” followed by a 24-bit address (A23-A0) to erase one of the security
registers.
Security Register-3
00h
A15-8
A7-0
10h
xxh
20h
xxh
30h
xxh
ot
R
Note:
1. Addresses outside the ranges in the table have undefined results.
N
The Erase Security Register command sequence is shown in Figure 62. The CS# pin must be driven high after the eighth bit of the
last byte has been latched. If this is not done the command will not be executed. After CS# is driven high, the self-timed Erase
Security Register operation will commence for a time duration of tSE (see Section 4.8, AC Electrical Characteristics on page 25).
While the Erase Security Register cycle is in progress, the Read Status Register command may still be accessed for checking the
status of the BUSY bit. The BUSY bit is a 1 during the erase cycle and becomes a 0 when the cycle is finished and the device is
ready to accept other commands again. After the Erase Security Register cycle has finished the Write Enable Latch (WEL) bit in the
Status Register is cleared to 0. The Security Register Lock Bits (LB3:1) in the Status Register-2 can be used to OTP protect the
security registers. Once a lock bit is set to 1, the corresponding security register will be permanently locked, and an Erase Security
Register command to that register will be ignored (see Security Register Lock Bits (LB3, LB2, LB1, LB0) on page 57).
Figure 62. Erase Security Registers Command Sequence
CS#
SCK
SI
7
6
5
4
3
2
1
0
23
1
0
SO
Phase
Document Number: 002-00497 Rev. *H
Instruction
Address
Page 79 of 90
S25FL116K/S25FL132K/S25FL164K
8.5.7
Program Security Registers (42h)
The Program Security Register command is similar to the Page Program command. It allows from one byte to 256 bytes of security
register data to be programmed at previously erased (FFh) memory locations. A Write Enable command must be executed before
the device will accept the Program Security Register Command (Status Register bit WEL= 1). The command is initiated by driving
the CS# pin low then shifting the instruction code “42h” followed by a 24-bit address (A23-A0) and at least one data byte, into the SI
pin. The CS# pin must be held low for the entire length of the command while data is being sent to the device.
Address
A23-16
A15-8
A7-0
Security Register-1
00h
10h
Byte Address
Security Register-2
00h
20h
Byte Address
Security Register-3
00h
30h
Byte Address
es
ig
n
Note:
1. Addresses outside the ranges in the table have undefined results.
ew
D
The Program Security Register command sequence is shown in Figure 63. The Security Register Lock Bits (LB3:1) in the Status
Register-2 can be used to OTP protect the security registers. Once a lock bit is set to 1, the corresponding security register will be
permanently locked, and a Program Security Register command to that register will be ignored (see Security Register Lock Bits
(LB3, LB2, LB1, LB0) on page 57 and Page Program (02h) on page 67 for detail descriptions).
rN
Figure 63. Program Security Registers Command Sequence
fo
CS#
7
6
5
4
3
2
1
0 23
SO
Phase
5
4
3
2
1
en
d
SI
ed
SCK
Address
7
6
5
4
3
2
Input Data1
1
0
7
6
5
4
3
2
1
0
Input Data2
8.5.8
ec
om
m
Instruction
0
Read Security Registers (48h)
N
ot
R
The Read Security Register command is similar to the Fast Read command and allows one or more data bytes to be sequentially
read from one of the three security registers. The command is initiated by driving the CS# pin low and then shifting the instruction
code “48h” followed by a 24-bit address (A23-A0) and eight “dummy” clocks into the SI pin. The code and address bits are latched
on the rising edge of the SCK pin. After the address is received, and following the eight dummy cycles, the data byte of the
addressed memory location will be shifted out on the SO pin at the falling edge of SCK with most significant bit (MSB) first. Locations
with address bits A23-A16 not equal to zero, have undefined data. The byte address is automatically incremented to the next byte
address after each byte of data is shifted out. Once the byte address reaches the last byte of the register (byte FFh), it will reset to
00h, the first byte of the register, and continue to increment. The command is completed by driving CS# high. The Read Security
Register command sequence is shown in Figure 64. If a Read Security Register command is issued while an Erase, Program, or
Write cycle is in process (BUSY=1), the command is ignored and will not have any effects on the current cycle. The Read Security
Register command allows clock rates from DC to a maximum of FR (see Section 4.8, AC Electrical Characteristics on page 25).
Address
A23-16
A15-8
A7-0
Security Register-0 (SFDP)
00h
00h
Byte Address
Security Register-1
00h
10h
Byte Address
Security Register-2
00h
20h
Byte Address
Security Register-3
00h
30h
Byte Address
Note:
1. Addresses outside the ranges in the table have undefined results.
Document Number: 002-00497 Rev. *H
Page 80 of 90
S25FL116K/S25FL132K/S25FL164K
Figure 64. Read Security Registers Command Sequence
CS#
SCK
SI
7
6
5
4
3
2
1
0 23
1
0
SO
Phase
8.6
7
Instruction
Address
6
5
Dummy Cycles
4
3
2
1
0
Data 1
Set Block / Pointer Protection (39h) — S25FL132K and S25FL164K
The user has a choice to enable one of two protection mechanisms: block protection or pointer protection. Only one protection
mechanism can be enabled at one time.
es
ig
n
The Set Block / Pointer Protection (39h) is a new command (see Figure 65) and is used to determine which one of the two protection
mechanisms is enabled, and if the pointer protection mechanism is enabled, determines the pointer address. The Write Enable
command must precede the Set Block / Pointer command.
ew
D
After the Set Block / Pointer Protection command is given, the value of A10 in byte 3 selects whether the block protection or the
pointer protection mechanism will be enabled. If A10 = 1, then the block protection mode is enabled. This is the default state, and the
rest of pointer values are don’t care. If A10=0, then the pointer protection is enabled, and the block protection feature is disabled.
The pointer address values A9 to A0 are don’t care.
ed
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If the pointer protection mechanism is enabled, a pointer address determines the boundary between the protected and the
unprotected regions in the memory. The format of the Set Pointer command is the 39h instruction followed by three address bytes.
For the S25FL132K, ten address bits (A21-A12) after the 39h command are used to program the non-volatile pointer address. For
the 32M, A23 – A22 are don’t care. For the S25FL164K, eleven address bits (A22-A12) after the 39h command are used to program
the non-volatile pointer address. For the 64M, A23 is a don’t care.
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The A11 bit can be used to protect all sectors. If A11=1, then all sectors are protected, and A23 – A12 are don’t cares. If A11=0, then
the unprotected range will be determined by A22-A12 for the 64M and A21-A12 for the 32M. The area that is unprotected will be
inclusive of the 4-kB sector selected by the pointer address.
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Bit 5 (Top / Bottom) of SR1 is used to determine whether the region that will be unprotected will start from the top (highest address)
or bottom (lowest address) of the memory array to the location of the pointer. If TB=0 and the 39h command is issued followed by a
24-bit address, then the 4-kB sector which includes that address and all the sectors from the bottom up (zero to higher address) will
be unprotected. If TB=1 and 39h command is issued followed by a 24-bit address then the 4-kB sector which includes that address
and all the sectors from the Top down (max to lower address) will be unprotected.
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The SRP1 (SR2 [0]) and SRP0 (SR1 [7]) bits are used to protect the pointer address in the same way they protect SR1 and SR2.
When SRP1 and SRP0 protect SR1 and SR2, the 39h command is ignored. This effectively prevents changes to the protection
scheme using the existing SRP1-SRP0 mechanism – including the OTP protection option.
The 39h command is ignored during a suspend operation because the pointer address cannot be erased and re-programmed during
a suspend.
Document Number: 002-00497 Rev. *H
Page 81 of 90
S25FL116K/S25FL132K/S25FL164K
The Read Status Register-3 command 33h (see Figure 34 for 33h timing diagram) reads the contents of SR3 followed by the
contents of the pointer. This allows the contents of the pointer to be read out for test and verification. The read back order is SR3,
A23-A16, A15-A8. If CS# remains low, the Bytes after A15-A8 are undefined.
Protect Address Unprotect Address
Range
Range
TB
A11
A10
x
x
1
See Block Protect
Method
See Block Protect
Method
0
Amax (1) to
(A+1)
A (2)
to 000000
If TB=0 and the 39h command is issued followed by a 24-bit
address, then the 4-kB sector which includes that address
and all the sectors from the bottom up (zero to higher
address) will be unprotected.
Amax (1)
to A
If TB=1 and 39h command is issued followed by a 24-bit
address then the 4-kB sector which includes that address and
all the sectors from the Top down (max to lower address) will
be unprotected.
Not Applicable
A10=0 and A11 =1 means protect all sectors and Amax-A12
are don't care.
0
0
0
0
x
1
0
Amax (1) to
000000
A10 = 1 the block protect protection mode is enabled (this is
the default state and the rest of pointer address is don't care).
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1
(A-1)
to 000000
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Notes:
1. Amax = 7FFFFFh for the FL164K, and 3FFFFFh for the FL132K.
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2. A for the FL132K.
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Block Erase: In general, if the pointer protect scheme is active (A10=0), protect all sectors is not active (A11=0), and the pointer
address points to anywhere within the block, the whole block will be protected from Block Erase even though part of the block is
unprotected. The 2 exceptions where block erase goes through is if the pointer address points to the TOP sector of the
block(A[15:12]=1111) if TB=0, and if the pointer points to the BOTTOM sector of the block (A[15:12]=0000) and TB=1.
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Figure 65. Set Pointer Address (39h)
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CS#
SCK
Instruction
Address
N
Phase
R
SO
7 6 5 4 3 2 1 0 23 22 21 20 19 18 17 16 15 14 13 12 11 10 X X X X X X X X X X
Dummy Cycles
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Document Number: 002-00497 Rev. *H
Page 82 of 90
S25FL116K/S25FL132K/S25FL164K
9.
9.1
Data Integrity
Erase Endurance
Table 37. Erase Endurance
Parameter
Program/Erase cycles main Flash array sector
Program/Erase cycles Security Registers non-volatile register array (1)
Min
Unit
100K
PE cycle
1K
PE cycle
Data Retention
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9.2
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Note:
1. Each write command to a non-volatile register causes a PE cycle on the entire non-volatile register array. Re-writing registers with the same value doesn’t cause a PE
cycle. OTP bits in registers internally reside in a separate array that is not cycled.
Test Conditions
Unit
20
Years
2
Years
10K Program/Erase Cycles
ew
Data Retention Time
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100K Program/Erase Cycles
Initial Delivery State
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9.3
Minimum Time
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Parameter
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The device is shipped from Cypress with non-volatile bits / default states set as follows:
The entire memory array is erased: i.e. all bits are set to 1 (each byte contains FFh).
The Unique Device ID is programmed to a random number seeded by the date and time of device test.
The SFDP Security Register address space 0 contains the values as defined in Table 6.6.2, Serial Flash Discoverable
Parameters (SFDP) on page 59. Security Register address spaces 1 to 3 are erased: i.e. all bits are set to 1 (each byte
contains FFh).
Status Register-1 contains 00h.
Status Register-2 contains 04h.
Status Register-3 contains 70h.
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Document Number: 002-00497 Rev. *H
Page 83 of 90
S25FL116K/S25FL132K/S25FL164K
10. Ordering Information
The ordering part number is formed by a valid combination of the following:
S25FL1
32
K
0X
M
F
I
01
1
Packing Type
0 = Tray
1 = Tube
3 = 13” Tape and Reel
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Model Number (Additional Ordering Options)
00 = 16-lead SO package (300 mil)
01 = 8-lead SO package (208 mil) / 8-contact WSON
02 = 5 x 5 ball BGA package
03 = 4 x 6 ball BGA package (208 mil)
04 = 8-lead SO package (150 mil) / 8-contact USON (4 mm 4 mm)
Q1 = 8-lead SO package (208 mil) / 8-contact WSON
(Default quad mode enabled)
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Temperature Range
I = Industrial (-40°C to +85°C)
V = Industrial Plus (-40°C to +105°C)
A = Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)
B = Automotive, AEC-Q100 Grade 2 (–40°C to +105°C)
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Package Materials
F =Lead (Pb)-free, Halogen-free
H= Low-halogen, Lead (Pb)-free
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Package Type
M = 8-lead / 16-lead SO package
N = 8-contact WSON/USON package
B = 24-ball 6 8 mm BGA package, 1.0 mm pitch
Speed
0X = 108 MHz
Device Technology
K = 90 nm floating gate process technology
Density
16 = 16 Mbits
32 = 32 Mbits
64 = 64 Mbits
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Device Family
S25FL1
Cypress Memory 3.0 Volt-Only, Serial Peripheral Interface (SPI) Flash Memory
Document Number: 002-00497 Rev. *H
Page 84 of 90
S25FL116K/S25FL132K/S25FL164K
Valid Combinations — Standard
Table 38 lists standard configurations planned to be supported in volume for this device. Consult your local sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
Table 38. Valid Combinations for Standard Part Numbers
Speed Option
Package and Temperature
Model Number
01
FL116KIF01
MFI
Q1
FL116KIFQ1
MFV
FL116K
FL116KIF4
01
FL116KVF01
Q1
D
02
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0X
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FL132K
NFI
NFV
BHI
BHV
MFI
MFV
FL164K
0X
NFI
NFV
BHI
BHV
Document Number: 002-00497 Rev. *H
FL116KIH02
0, 3
ew
BHV
MFV
FL116KIFQ1
FL116KVF01
02
03
FL116KVF4
FL116KIF01
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01
BHI
MFI
0, 1, 3
01
NFV
Package Marking
04
04
NFI
0X
Packing Type
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Base Ordering Part Number
FL116KIH03
FL116KVH02
03
FL116KVH03
01
FL132KIF01
04
FL132KIF4
Q1
FL132KIFQ1
01
FL132KVF01
04
01
0, 1, 3
FL132KVF4
FL132KIF01
04
FL132KIF04
Q1
FL132KIFQ1
01
FL132KVF01
04
FL132KVF04
02
FL132KIH02
03
FL132KIH03
02
0, 3
03
FL132KVH02
FL132KVH03
00
FL164KIF00
01
FL164KIF01
Q1
FL164KIFQ1
00
FL164KVF00
01
0, 1, 3
01
FL164KVF01
FL164KIF01
Q1
FL164KIFQ1
01
FL164KVF01
02
FL164KIH02
03
FL164KIH03
02
03
0, 3
FL164KVH02
FL164KVH03
Page 85 of 90
S25FL116K/S25FL132K/S25FL164K
Valid Combinations — Automotive Grade / AEC-Q100
The table below lists configurations that are Automotive Grade / AEC-Q100 qualified and are planned to be available in volume. The
table will be updated as new combinations are released. Consult your local sales representative to confirm availability of specific
combinations and to check on newly released combinations.
Production Part Approval Process (PPAP) support is only provided for AEC-Q100 grade products.
Products to be used in end-use applications that require ISO/TS-16949 compliance must be AEC-Q100 grade products in
combination with PPAP. Non–AEC-Q100 grade products are not manufactured or documented in full compliance with
ISO/TS-16949 requirements.
AEC-Q100 grade products are also offered without PPAP support for end-use applications that do not require ISO/TS-16949
compliance.
Table 39. Valid Combinations — Automotive Grade / AEC-Q100
Speed Option
Package and Temperature
Model Number
MFA
Q1
FL116KAFQ1
D
04
01
MFB
NFB
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BHA
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NFA
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0X
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FL116K
04
MFB
ot
0X
N
FL132K
NFB
BHA
BHB
MFB
FL164K
0X
BHA
BHB
Document Number: 002-00497 Rev. *H
FL116KAF4
0, 1, 3
FL116KBF01
FL116KBF4
01
FL116KAF01
Q1
FL116KAFQ1
01
FL116KBF01
02
FL116KAH02
03
02
0, 3
FL116KAH03
FL116KBH02
03
FL116KBH03
01
FL132KBF01
04
FL132KBF4
01
NFA
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BHB
Package Marking
FL116KAF01
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01
Packing Type
n
Base Ordering Part Number
04
FL132KAF01
0, 1, 3
FL132KAF04
Q1
FL132KAFQ1
01
FL132KBF01
04
FL132KBF04
02
FL132KAH02
03
02
0, 3
03
Q1
FL132KAH03
FL132KBH02
FL132KBH03
0, 1, 3
FL164KAFQ1
02
FL164KAH02
03
FL164KAH03
02
03
0, 3
FL164KBH02
FL164KBH03
Page 86 of 90
S25FL116K/S25FL132K/S25FL164K
11. Revision History
Document History Page
Document Title: S25FL116K/S25FL132K/S25FL164K, 16-Mbit (2 Mbyte)/32-Mbit (4 Mbyte)/64-Mbit (8 Mbyte), 3.0 V, SPI Flash
Memory
Document Number: 002-00497
Rev.
**
ECN No.
Orig. of
Change
Submission
Date
ASPA
Description of Change
04/14/2014
Initial release
Combined S25FL116K_00_06 and S25FL132K_164K_00_05
Global: Promoted data sheet from Preliminary to Full Production
Added 125°C option
ASPA
10/10/2014
*B
ASPA
12/04/2014
Power-Up Timing: Power-Up Timing and Voltage Levels table: corrected TPUW
Valid Combinations: Valid Combinations table: corrected FL116K Model Number and
Package Marking
*C
4891479
BWHA
09/18/2015
Updated to Cypress template.
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*A
Migration Notes: FL Generations Comparison table: corrected Sector Erase Time (typ.)
for S25FL1-K
AC Electrical Characteristics: AC Electrical Characteristics — -40°C to +85°C/105°C at
2.7V to 3.6V table: added tRCH and tRST
Input / Output Timing: added Software Reset Input Timing figure
Physical Interface: Corrected figure: 8-Contact WSON (5 mm x 6 mm) Package
Security Register 0 — Serial Flash Discoverable Parameters
(SFDP — JEDEC JESD216B): Updated section based on revised JEDEC JESD216B
spec
Commands: Added Command Set (Reset Commands) table
Reset Commands: Added sections: Reset Commands, Software Reset Enable (66h),
Software Reset (99h)
Updated section: Continuous Read Mode Reset (FFh or FFFFh)
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Added “USON 4 mm 4 mm” package related information in all instances across the
document.
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Updated Features:
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Updated Package Options.
Updated Physical Interface:
Updated Connection Diagrams:
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Updated SOIC 8:
*D
5044503
BWHA
Updated Figure 28.
Updated SOIC 16 — S25FL164K:
Updated Figure 29.
Updated WSON 8:
12/18/2015
Updated Figure 30.
Updated FAB024 24-Ball BGA:
Updated Figure 31.
Updated FAC024 24-Ball BGA Package:
Updated Figure 32.
Updated Physical Diagrams:
Added UNF008 — 8-Contact USON 4 mm x 4 mm.
Updated Ordering Information:
Added “Halogen-free” for “F” under “Package Materials”.
Added Note “GT grade is Cypress’s quality and reliability rating to indicate products that
are tested to meet
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