S29GL064N11FFIS13

Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as “Cypress” document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.com S29GL064N, S29GL032N 64 Mbit, 32 Mbit 3 V Page Mode MirrorBit Flash Distinctive Characteristics Architectural Advantages ■ Single power supply operation ■ Manufactured on 110 nm MirrorBit process technology ■ Secured SiliconSector region ❐ 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence ❐ Programmed and locked at the factory or by the customer ■ Flexible sector architecture ❐ 64Mb (uniform sector models): One hundred twenty-eight 32 Kword (64 KB) sectors ❐ 64 Mb (boot sector models): One hundred twenty-seven 32 Kword (64 KB) sectors + eight 4Kword (8KB) boot sectors ❐ 32 Mb (uniform sector models): Sixty-four 32Kword (64 KB) sectors ❐ 32 Mb (boot sector models): Sixty-three 32Kword (64 KB) sectors + eight 4Kword (8KB) boot sectors ■ Enhanced VersatileI/O™ Control ❐ All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC ■ Compatibility with JEDEC standards ❐ Provides pin out and software compatibility for single-power supply flash, and superior inadvertent write protection ■ 100,000 erase cycles typical per sector ■ 20-year data retention typical ■ Low power consumption ❐ 25 mA typical initial read current, 1 mA typical page read current ❐ 50 mA typical erase/program current ❐ 1 µA typical standby mode current ■ Package options ❐ 48-pin TSOP ❐ 56-pin TSOP ❐ 64-ball Fortified BGA ❐ 48-ball fine-pitch BGA Software and Hardware Features ■ Software features ❐ Advanced Sector Protection: offers Persistent Sector Protection and Password Sector Protection ❐ Program Suspend & Resume: read other sectors before programming operation is completed ❐ Erase Suspend & Resume: read/program other sectors before an erase operation is completed ❐ Data# polling & toggle bits provide status ❐ CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices ❐ Unlock Bypass Program command reduces overall multiple-word programming time ■ Hardware features ❐ WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models ❐ Hardware reset input (RESET#) resets device ❐ Ready/Busy# output (RY/BY#) detects program or erase cycle completion Performance Characteristics ■ High performance ❐ 90 ns access time ❐ 8-word/16-byte page read buffer ❐ 25 ns page read time ❐ 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates Cypress Semiconductor Corporation Document Number: 001-98525 Rev. *B • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised May 26, 2017 S29GL064N, S29GL032N General Description The S29GL-N family of devices are 3.0-Volt single-power Flash memory manufactured using 110 nm MirrorBit technology. The S29GL064N is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032N is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the devices have 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers. Access times as fast as 90 ns are available. Note that each access time has a specific operating voltage range (VCC) as specified in the Product Selector Guide and the Ordering Information–S29GL032N , and Ordering Information– S29GL064N. Package offerings include 48-pin TSOP, 56-pin TSOP, 48-ball fine-pitch BGA and 64-ball Fortified BGA, depending on model number. Each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Each device requires only a single 3.0-Volt power supply for both read and write functions. In addition to a V CC input, a high-voltage accelerated program (ACC) feature provides shorter programming times through increased voltage on the WP#/ACC or ACC input. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. The Advanced Sector Protection features several levels of sector protection, which can disable both the program and erase operations in certain sectors. Persistent Sector Protection is a method that replaces the previous 12-volt controlled protection method. Password Sector Protection is a highly sophisticated protection method that requires a password before changes to certain sectors are permitted. Document Number: 001-98525 Rev. *B Device programming and erasure are initiated through command sequences. Once a program or erase operation begins, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write cycles to program data instead of four. Hardware data protection measures include a low V CC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend/Program Resume feature enables the host system to pause a program operation in a given sector to read any other sector and then complete the program operation. The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device. The device reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses are stable for a specified period of time. The Write Protect (WP#) feature protects the first or last sector by asserting a logic low on the WP#/ACC pin or WP# pin, depending on model number. The protected sector is still protected even during accelerated programming. The Secured Silicon Sector provides a 128-word/256-byte area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur. Cypress MirrorBit flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection. Page 2 of 78 S29GL064N, S29GL032N Contents 1. Product Selector Guide ............................................... 4 2. Block Diagram.............................................................. 4 3. Connection Diagrams.................................................. 5 4. Pin Description............................................................. 9 5. Logic Symbols ........................................................... 10 6. Ordering Information–S29GL032N ........................... 12 7. 7.1 Ordering Information–S29GL064N ........................... 14 Valid Combinations ...................................................... 15 8. 8.1 8.2 8.3 8.4 8.5 8.6 8.7 8.8 8.9 8.10 8.11 8.12 8.13 8.14 8.15 8.16 8.17 Device Bus Operations.............................................. Word/Byte Configuration.............................................. Requirements for Reading Array Data......................... Writing Commands/Command Sequences.................. Standby Mode.............................................................. Automatic Sleep Mode................................................. RESET#: Hardware Reset Pin..................................... Output Disable Mode ................................................... Autoselect Mode .......................................................... Advanced Sector Protection ........................................ Lock Register ............................................................... Persistent Sector Protection ........................................ Password Sector Protection......................................... Password and Password Protection Mode Lock Bit .... Persistent Protection Bit Lock (PPB Lock Bit).............. Secured Silicon Sector Flash Memory Region ............ Write Protect (WP#/ACC) ............................................ Hardware Data Protection............................................ 9. Common Flash Memory Interface (CFI) ................... 36 10. 10.1 10.2 10.3 10.4 Command Definitions................................................ Reading Array Data ..................................................... Reset Command .......................................................... Autoselect Command Sequence ................................. Enter/Exit Secured Silicon Sector Command Sequence ................................................... Program Suspend/Program Resume Command Sequence ................................................... Chip Erase Command Sequence ................................ Sector Erase Command Sequence ............................. Erase Suspend/Erase Resume Commands ................ 10.5 10.6 10.7 10.8 Document Number: 001-98525 Rev. *B 16 16 16 17 18 18 18 18 29 30 30 31 33 33 33 34 35 35 39 39 39 40 40 43 44 45 46 10.9 Command Definitions.................................................... 47 10.10Write Operation Status ................................................. 52 10.11DQ7: Data# Polling....................................................... 53 10.12RY/BY#: Ready/Busy# ................................................. 54 10.13DQ6: Toggle Bit I .......................................................... 54 10.14DQ2: Toggle Bit II ......................................................... 55 10.15Reading Toggle Bits DQ6/DQ2 .................................... 55 10.16DQ5: Exceeded Timing Limits ...................................... 55 10.17DQ3: Sector Erase Timer ............................................. 55 10.18DQ1: Write-to-Buffer Abort ........................................... 56 11. Absolute Maximum Ratings....................................... 57 12. Operating Ranges ....................................................... 58 13. DC Characteristics...................................................... 58 14. Test Conditions ........................................................... 60 14.1 Key to Switching Waveforms ........................................ 60 15. AC Characteristics...................................................... 61 16. Erase And Programming Performance..................... 70 17. Data Integrity ............................................................... 71 17.1 Erase Endurance .......................................................... 71 17.2 Data Retention .............................................................. 71 18. Physical Dimensions .................................................. 72 18.1 TS048—48-Pin Standard Thin Small Outline Package (TSOP) .............................................. 72 18.2 TS056—56-Pin Standard Thin Small Outline Package (TSOP) .............................................. 73 18.3 VBK048—Ball Fine-pitch Ball Grid Array (BGA) 8.15x 6.15 mm Package .................................... 74 18.4 LAA064—64-Ball Fortified Ball Grid Array (BGA) 13 x 11 mm Package ......................................... 75 18.5 LAE064-64-Ball Fortified Ball Grid Array (BGA) 9 x 9 mm Package ............................................. 76 19. Revision History.......................................................... 77 Sales, Solutions, and Legal Information .......................... 78 Worldwide Sales and Design Support ...........................78 Products ........................................................................ 78 PSoC® Solutions .......................................................... 78 Cypress Developer Community .....................................78 Technical Support ......................................................... 78 Page 3 of 78 S29GL064N, S29GL032N 1. Product Selector Guide Part Number Speed Option VCC = 2.7–3.6 V VIO = 2.7–3.6 V S29GL064N S29GL032N 90 90 VIO = 1.65–3.6 V 110 110 Max. Access Time (ns) 90 110 90 110 Max. CE# Access Time (ns) 90 110 90 110 Max. Page Access Time (ns) 25 30 25 30 Max. OE# Access Time (ns) 25 30 25 30 2. Block Diagram DQ15–DQ0 (A-1) RY/BY# VCC Sector Switches VSS Erase Voltage Generator Input/Output Buffers RESET# WE# WP#/ACC BYTE# State Control Command Register PGM Voltage Generator Chip Enable Output Enable Logic CE# OE# Address Latch Timer Data Latch Y-Decoder Y-Gating X-Decoder Cell Matrix STB VCC Detector STB AMax**–A0 Note **AMAX GL064N = A21, GL032N = A20. Document Number: 001-98525 Rev. *B Page 4 of 78 S29GL064N, S29GL032N 3. Connection Diagrams Special Package Handling Instructions Special handling is required for Flash Memory products in molded packages (TSOP and BGA). The package and/or data integrity may be compromised if the package body is exposed to temperatures above 150°C for prolonged periods of time. Figure 1. 48-Pin Standard TSOP S29GL064N, S29GL032N (Models 03, 04 only) S29GL064N (Models 06, 07, V6, V7 only) A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# A21 WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 A15 A14 A13 A12 A11 A10 A9 A8 A21 A20 WE# RESET# ACC WP# A19 A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 VIO VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 NC on S29GL032N Document Number: 001-98525 Rev. *B Page 5 of 78 S29GL064N, S29GL032N Figure 2. 56-Pin Standard TSOP NC on S29GL032N NC NC A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# A21 WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Document Number: 001-98525 Rev. *B S29GL064N, S29GL032N (Models 01, 02, V1, V2 only) 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 NC NC A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 NC VIO Page 6 of 78 S29GL064N, S29GL032N Figure 3. 64-ball Fortified BGA S29GL064N, S29GL032N (Models 01, 02, 03, 04, V1, V2 only) Top View, Balls Facing Down NC on S29GL032N NC on 03, 04 options A8 B8 C8 D8 E8 F8 G8 H8 NC NC NC VIO VSS NC NC NC A7 B7 C7 D7 E7 F7 G7 H7 A13 A12 A14 A15 A16 BYTE# DQ15/A-1 VSS A6 B6 C6 D6 E6 F6 G6 H6 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 A5 WE# A4 B5 C5 D5 E5 F5 G5 H5 RESET# A21 A19 DQ5 DQ12 VCC DQ4 B4 C4 D4 E4 F4 G4 H4 A18 A20 DQ2 DQ10 DQ11 DQ3 RY/BY# WP#/ACC A3 B3 C3 D3 E3 F3 G3 H3 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A2 B2 C2 D2 E2 F2 G2 H2 A3 A4 A2 A1 A0 CE# OE# VSS A1 B1 C1 D1 E1 F1 G1 H1 NC NC NC NC NC VIO NC NC Document Number: 001-98525 Rev. *B Page 7 of 78 S29GL064N, S29GL032N Figure 4. 48-ball Fine-pitch BGA (VBK 048) S29GL064N, S29GL032N (Models 03, 04 only) Top View, Balls Facing Down NC on S29GL032N A6 B6 C6 D6 E6 F6 G6 H6 A13 A12 A14 A15 A16 BYTE# DQ15/A-1 VSS A5 B5 C5 D5 E5 F5 G5 H5 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 A4 WE# A3 B4 C4 D4 E4 F4 G4 H4 RESET# A21 A19 DQ5 DQ12 VCC DQ4 B3 C3 D3 E3 F3 G3 H3 A18 A20 DQ2 DQ10 DQ11 DQ3 RY/BY# WP#/ACC A2 B2 C2 D2 E2 F2 G2 H2 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A1 B1 C1 D1 E1 F1 G1 H1 OE# VSS A3 A4 Document Number: 001-98525 Rev. *B A2 A1 A0 CE# Page 8 of 78 S29GL064N, S29GL032N 4. Pin Description Pin Description A21–A0 22 Address inputs (S29GL064N) A20–A0 21 Address inputs (S29GL032N) DQ7–DQ0 8 Data inputs/outputs DQ14–DQ0 15 Data inputs/outputs DQ15/A-1 CE# DQ15 (Data input/output, word mode), A-1 (LSB Address input, byte mode) Chip Enable input OE# Output Enable input WE# Write Enable input WP#/ACC ACC WP# Hardware Write Protect input/Programming Acceleration input Acceleration input Hardware Write Protect input RESET# Hardware Reset Pin input RY/BY# Ready/Busy output BYTE# Selects 8-bit or 16-bit mode VCC 3.0 volt-only single power supply (see Product Selector Guide for speed options and voltage supply tolerances) VIO Output Buffer Power VSS Device Ground NC Pin Not Connected Internally Document Number: 001-98525 Rev. *B Page 9 of 78 S29GL064N, S29GL032N 5. Logic Symbols Figure 5. S29GL064N Logic Symbol (Models 01, 02, V1, V2) 22 A21–A0 CE# 16 or 8 DQ15–DQ0 (A-1) OE# WE# WP#/ACC RESET# VIO RY/BY# BYTE# Figure 6. S29GL064N Logic Symbol (Models 03, 04) 22 A21–A0 CE# 16 or 8 DQ15–DQ0 (A-1) OE# WE# WP#/ACC RESET# BYTE# RY/BY# Figure 7. S29GL064N Logic Symbol (Models 06, 07, V6, V7) 22 A21–A0 16 DQ15–DQ0 CE# OE# WE# WP# ACC RESET# RY/BY# VIO Document Number: 001-98525 Rev. *B Page 10 of 78 S29GL064N, S29GL032N Figure 8. S29GL032N Logic Symbol (Models 01, 02, V1, V2) 21 A20–A0 CE# 16 or 8 DQ15–DQ0 (A-1) OE# WE# WP#/ACC RESET# VIO RY/BY# BYTE# Figure 9. S29GL032N Logic Symbol (Models 03, 04) 21 A20–A0 CE# 16 or 8 DQ15–DQ0 (A-1) OE# WE# WP#/ACC RESET# BYTE# Document Number: 001-98525 Rev. *B RY/BY# Page 11 of 78 S29GL064N, S29GL032N 6. Ordering Information–S29GL032N S29GL032N Standard Products Standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: S29GL032N 90 T F I 01 0 PACKING TYPE 0 = Tray 2 = 7-inch Tape and Reel 3 = 13-inch Tape and Reel MODEL NUMBER 01 = x8/x16, VCC= VIO = 2.7 – 3.6 V, Uniform sector, WP#/ACC = VIL protects highest addressed sector 02 = x8/x16, VCC = VIO = 2.7 – 3.6 V, Uniform sector, WP#/ACC = VIL protects lowest addressed sector 03 = x8/x16, VCC = 2.7 – 3.6 V, Top boot sector, WP#/ACC = VIL protects top two addressed sectors 04 = x8/x16, VCC = 2.7 – 3.6 V, Bottom boot sector, WP#/ACC = VIL protects bottom two addressed sectors V1 = x8/x16, VCC = 2.7 – 3.6 V, VIO = 1.65 - 3.6 V, Uniform sector, WP#/ACC = VIL protects highest addressed sector V2 = x8/x16, VCC = 2.7 – 3.6 V, VIO = 1.65 - 3.6 V, Uniform sector, WP#/ACC = VIL protects lowest addressed sector TEMPERATURE RANGE I = Industrial (–40°C to +85°C) A = Automotive, AEC-Q100 Grade 3 (–40°C to +85°C) PACKAGE MATERIAL SET A = Standard (Note 4) F = Pb-Free PACKAGE TYPE B = Fine-pitch Ball-Grid Array Package D = Fortified Ball-Grid Array Package(LAE064), 9 mm x 9 mm F = Fortified Ball-Grid Array Package (LAA064), 13 mm x 11 mm T = Thin Small Outline Package (TSOP) Standard Pinout SPEED OPTION See Product Selector Guide and Valid Combinations (90 = 90 ns, 11 = 110 ns) DEVICE NUMBER/DESCRIPTION S29GL032N 32 Megabit Page-Mode Flash Memory Manufactured using 110 nm MirrorBit® Process Technology, 3.0 Volt-only Read, Program, and Erase Document Number: 001-98525 Rev. *B Page 12 of 78 S29GL064N, S29GL032N Table 1. S29GL032N Ordering Options (Note 4) S29GL032N Valid Combinations Device Number Speed Option Package, Material, and Temperature Range 90 90 TFI, TFA 90 90 11 90 11 TS048 (Note 2) 01, 02 TS056 (Note 2) V1, V2 BFI, BFA FFI, FFA DFI, DFA 03, 04 01, 02, 03, 04 Package Description Packing Type 03, 04 11 S29GL032N Model Number 0,2,3 (Note 1) V1, V2 01, 02, 03, 04 V1, V2 VBK048 (Note 3) TSOP Fine-Pitch BGA LAA064 (Note 3) Fortified BGA LAE064 (Note 3) Notes 1. Type 0 is standard. Specify others as required: TSOPs can be packed in Types 0 and 3; BGAs can be packed in Types 0, 2, or 3. 2. TSOP package marking omits packing type designator from ordering part number. 3. BGA package marking omits leading S29 and packing type designator from ordering part number. 4. Contact local sales for availability for Leaded lead-frame parts.Valid Combinations. Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. The table also lists configurations that are Automotive Grade / AEC-Q100 qualified and are planned to be available in volume. Contact your local sales representative to confirm availability of specific combinations and to check on newly released combinations. Production Part Approval Process (PPAP) support is only provided for AEC-Q100 grade products. Products to be used in end-use applications that require ISO/TS-16949 compliance must be AEC-Q100 grade products in combination with PPAP. Non–AEC-Q100 grade products are not manufactured or documented in full compliance with ISO/TS-16949 requirements. AEC-Q100 grade products are also offered without PPAP support for end-use applications that do not require ISO/TS-16949 compliance. Document Number: 001-98525 Rev. *B Page 13 of 78 S29GL064N, S29GL032N 7. Ordering Information–S29GL064N S29GL064N Standard Products Standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: S29GL064N 90 T F I 02 2 PACKING TYPE 0 = Tray 2 = 7-inch Tape and Reel 3 = 13-inch Tape and Reel MODEL NUMBER 01 = x8/x16, VCC = VIO = 2.7 – 3.6 V, Uniform sector, WP#/ACC = VIL protects highest addressed sector 02 = x8/x16, VCC = VIO = 2.7 – 3.6 V, Uniform sector, WP#/ACC = VIL protects lowest addressed sector 03 = x8/x16, VCC = 2.7 – 3.6 V, Top boot sector, WP#/ACC = VIL protects top two addressed sectors 04 = x8/x16, VCC = 2.7 – 3.6 V, Bottom boot sector, WP#/ACC = VIL protects bottom two addressed sectors 06 = x16, VCC = 2.7 – 3.6 V, Uniform sector, WP# = VIL protects highest addressed sector 07 = x16, VCC = 2.7 – 3.6 V, Uniform sector, WP# = VIL protects lowest addressed sector V1 = x8/x16, VCC = 2.7 – 3.6 V, VIO = 1.65 - 3.6 V, Uniform sector, WP#/ACC = VIL protects highest addressed sector V2 = x8/x16, VCC = 2.7 – 3.6 V, VIO = 1.65 - 3.6 V, Uniform sector, WP#/ACC = VIL protects lowest addressed sector V6 = x16, VCC = 2.7 – 3.6 V, VIO = 1.65 - 3.6 V, Uniform sector, WP# = VIL protects highest addressed sector V7 = x16, VCC = 2.7 – 3.6 V, VIO = 1.65 - 3.6 V, Uniform sector, WP# = VIL protects lowest addressed sector TEMPERATURE RANGE I = Industrial (–40°C to +85°C) A = Automotive, AEC-Q100 Grade 3 (–40°C to +85°C) PACKAGE MATERIAL SET A = Standard (Note 4) F = Pb-Free PACKAGE TYPE B = Fine-pitch Ball-Grid Array Package D = Fortified Ball-Grid Array Package(LAE064), 9 mm x 9 mm F = Fortified Ball-Grid Array Package (LAA064), 13 mm x 11 mm T = Thin Small Outline Package (TSOP) Standard Pinout SPEED OPTION See Product Selector Guide and Valid Combinations (90 = 90 ns, 11 = 110 ns) DEVICE NUMBER/DESCRIPTION S29GL064N, 64 Megabit Page-Mode Flash Memory Manufactured using 110 nm MirrorBit® Process Technology, 3.0 Volt-only Read, Program, and Erase Document Number: 001-98525 Rev. *B Page 14 of 78 S29GL064N, S29GL032N 7.1 Valid Combinations S29GL064N Valid Combinations Device Number Speed Option Package, Material, and Temperature Range 90 03, 04, 06, 07 11 V6, V7 90 TFI, TFA 11 S29GL064N Model Number 90 90 11 90 11 TS048 (Note 2) TSOP 01, 02 TS056 (Note 2) V1, V2 BFI, BFA FFI, FFA DFI, DFA 03, 04 Package Description Packing Type 0,2,3 (Note 1) 01, 02, 03, 04 V1, V2 01, 02, 03, 04 V1, V2 VBK048 (Note 3) Fine-Pitch BGA LAA064 (Note 3) Fortified BGA LAE064 (Note 3) Notes 1. Type 0 is standard. Specify others as required: TSOPs can be packed in Types 0 and 3; BGAs can be packed in Types 0, 2, or 3. 2. TSOP package marking omits packing type designator from ordering part number. 3. BGA package marking omits leading S29 and packing type designator from ordering part number. 4. Contact local sales for availability for Leaded lead-frame parts. Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of specific valid combinations and to check on newly released combinations. The table also lists configurations that are Automotive Grade / AEC-Q100 qualified and are planned to be available in volume. Contact your local sales representative to confirm availability of specific combinations and to check on newly released combinations. Production Part Approval Process (PPAP) support is only provided for AEC-Q100 grade products. Products to be used in end-use applications that require ISO/TS-16949 compliance must be AEC-Q100 grade products in combination with PPAP. Non–AEC-Q100 grade products are not manufactured or documented in full compliance with ISO/TS-16949 requirements. AEC-Q100 grade products are also offered without PPAP support for end-use applications that do not require ISO/TS-16949 compliance. Document Number: 001-98525 Rev. *B Page 15 of 78 S29GL064N, S29GL032N 8. Device Bus Operations This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 2 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Table 2. Device Bus Operations RESET# WP# ACC Addresses DQ8–DQ15 CE# Read L L H H X X AIN DOUT DOUT Write (Program/Erase) L H L H (Note 1) X AIN (Note 2) (Note 2) Accelerated Program L H L H (Note 1) VHH AIN (Note 2) (Note 2) VCC  0.3V X X VCC  0.3V X H X High-Z High-Z Output Disable L H H H X X X High-Z High-Z High-Z Reset X X X L X X X High-Z High-Z High-Z Standby OE# WE# DQ0– DQ7 Operation BYTE# = VIH BYTE# = VIL DQ8–DQ14 = High-Z, DQ15 = A-1 High-Z Legend L = Logic Low = VIL H = Logic High = VIH VHH = 11.5–12.5V X = Don’t Care AIN = Address In DIN = Data In DOUT = Data Out Notes 1. If WP# = VIL, the first or last sector remains protected (for uniform sector devices), and the two outer boot sectors are protected (for boot sector devices). If WP# = VIH, the first or last sector, or the two outer boot sectors are protected or unprotected as determined by the method described in Write Protect (WP#). All sectors are unprotected when shipped from the factory (The Secured Silicon Sector may be factory protected depending on version ordered.) 2. DIN or DOUT as required by command sequence, data polling, or sector protect algorithm (see Figure 14 on page 53). 8.1 Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic 1, the device is in word configuration, DQ0–DQ15 are active and controlled by CE#, WE# and OE#. If the BYTE# pin is set at logic 0, the device is in byte configuration, and only data I/O pins DQ0–DQ7 are active and controlled by CE#, WE# and OE#. The data I/O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the LSB (A-1) address function. 8.2 Requirements for Reading Array Data All memories require access time to output array data. In a read operation, data is read from one memory location at a time. Addresses are presented to the device in random order, and the propagation delay through the device causes the data on its outputs to arrive with the address on its inputs. The device defaults to reading array data after device power-up or hardware reset. To read data from the memory array, the system must first assert a valid address on Amax-A0, while driving OE# and CE# to VIL. WE# must remain at VIH. All addresses are latched on the falling edge of CE#. Data will appear on DQ15-DQ0 after address access time (tACC), which is equal to the delay from stable addresses to valid output data. The OE# signal must be driven to VIL. Data is output on DQ15-DQ0 pins after the access time (tOE) has elapsed from the falling edge of OE#. See Reading Array Data on page 39 for more information. Refer to Table 25 on page 61 for timing specifications and the timing diagram. Refer to Table 23 on page 58 for the active current specification on reading array data. Document Number: 001-98525 Rev. *B Page 16 of 78 S29GL064N, S29GL032N 8.2.1 Page Mode Read The device is capable of fast page mode read and is compatible with the page mode Mask ROM read operation. This mode provides faster read access speed for random locations within a page. The page size of the device is 8 words/16 bytes. The appropriate page is selected by the higher address bits A(max)–A3. Address bits A2–A0 in word mode (A2–A-1 in byte mode) determine the specific word within a page. This is an asynchronous operation; the microprocessor supplies the specific word location. The random or initial page access is equal to tACC or tCE and subsequent page read accesses (as long as the locations specified by the microprocessor falls within that page) is equivalent to tPACC. When CE# is deasserted and reasserted for a subsequent access, the access time is tACC or tCE. Fast page mode accesses are obtained by keeping the read-page addresses constant and changing the intra-read page addresses. 8.3 Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word, instead of four. The Word Program Command Sequence on page 40 contains details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Tables 3 – 9 indicate the address space that each sector occupies. Refer to the DC Characteristics table for the active current specification for the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations. 8.3.1 Write Buffer Write Buffer Programming allows the system write to a maximum of 16 words/32 bytes in one programming operation. This results in faster effective programming time than the standard programming algorithms. 8.3.2 Accelerated Program Operation The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC or ACC pin, depending on model number. This function is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VHH on this pin, the device automatically enters the Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the WP#/ACC or ACC pin, depending on model number, returns the device to normal operation. Note that the WP#/ACC or ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. WP# contains an internal pull-up; when unconnected, WP# is at VIH. 8.3.3 Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7-DQ0. Standard read cycle timings (tACC) apply in this mode. Refer to Autoselect Mode on page 29 and Autoselect Command Sequence on page 39 for more information. Document Number: 001-98525 Rev. *B Page 17 of 78 S29GL064N, S29GL032N 8.4 Standby Mode When the system is not reading or writing to the device, it can be placed in to standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VIO ± 0.3 V. (Note that this is a more restricted voltage range than VIH.) If CE# and RESET# are held at VIH, but not within VIO ± 0.3 V, the device is in the standby mode, but the standby current is greater. The device requires standard access time (tACC/tCE) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. Refer to the DC Characteristics on page 58 for the standby current specification. 8.5 Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. Refer to the DC Characteristics on page 58 for the automatic sleep mode current specification. 8.6 RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, output pins go to Hi-Z, and all read/write commands are ignored for the duration of the RESET# pulse. Program/Erase operations that were interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS ±0.3 V, the device draws CMOS standby current (ICC5). The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. Refer to the AC Characteristics tables for RESET# parameters and to Figure 23 on page 63 for the timing diagram. 8.7 Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in a high impedance state. Document Number: 001-98525 Rev. *B Page 18 of 78 S29GL064N, S29GL032N Table 3. S29GL032N (Models 01, 02, V1, V2) Sector Addresses Sector A20-A15 Sector Size (KB/Kwords) 8-bit Address Range 16-bit Address Range Sector A20-A15 Sector Size (KB/Kwords) 8-bit Address Range 16-bit Address Range SA0 000000 64/32 000000h–00FFFFh 000000h–007FFFh SA32 100000 64/32 200000h–20FFFFh 100000h–107FFFh SA1 000001 64/32 010000h–01FFFFh 008000h–00FFFFh SA33 100001 64/32 210000h–21FFFFh 108000h–10FFFFh SA2 000010 64/32 020000h–02FFFFh 010000h–017FFFh SA34 100010 64/32 220000h–22FFFFh 110000h–117FFFh SA3 000011 64/32 030000h–03FFFFh 018000h–01FFFFh SA35 100011 64/32 230000h–23FFFFh 118000h–11FFFFh SA4 000100 64/32 040000h–04FFFFh 020000h–027FFFh SA36 100100 64/32 240000h–24FFFFh 120000h–127FFFh SA5 000101 64/32 050000h–05FFFFh 028000h–02FFFFh SA37 100101 64/32 250000h–25FFFFh 128000h–12FFFFh SA6 000110 64/32 060000h–06FFFFh 030000h–037FFFh SA38 100110 64/32 260000h–26FFFFh 130000h–137FFFh SA7 000111 64/32 070000h–07FFFFh 038000h–03FFFFh SA39 100111 64/32 270000h–27FFFFh 138000h–13FFFFh SA8 001000 64/32 080000h–08FFFFh 040000h–047FFFh SA40 101000 64/32 280000h–28FFFFh 140000h–147FFFh SA9 001001 64/32 090000h–09FFFFh 048000h–04FFFFh SA41 101001 64/32 290000h–29FFFFh 148000h–14FFFFh SA10 001010 64/32 0A0000h–0AFFFFh 050000h–057FFFh SA42 101010 64/32 2A0000h–2AFFFFh 150000h–157FFFh SA11 001011 64/32 0B0000h–0BFFFFh 058000h–05FFFFh SA43 101011 64/32 2B0000h–2BFFFFh 158000h–15FFFFh 160000h–167FFFh SA12 001100 64/32 0C0000h–0CFFFFh 060000h–067FFFh SA44 101100 64/32 2C0000h–2CFFFFh SA13 001101 64/32 0D0000h–0DFFFFh 068000h–06FFFFh SA45 101101 64/32 2D0000h–2DFFFFh 168000h–16FFFFh SA14 001110 64/32 0E0000h–0EFFFFh 070000h–077FFFh SA46 101110 64/32 2E0000h–2EFFFFh 170000h–177FFFh SA15 001111 64/32 0F0000h–0FFFFFh 078000h–07FFFFh SA47 101111 64/32 2F0000h–2FFFFFh 178000h–17FFFFh SA16 010000 64/32 100000h–10FFFFh 080000h–087FFFh SA48 110000 64/32 300000h–30FFFFh 180000h–187FFFh SA17 010001 64/32 110000h–11FFFFh 088000h–08FFFFh SA49 110001 64/32 310000h–31FFFFh 188000h–18FFFFh SA18 010010 64/32 120000h–12FFFFh 090000h–097FFFh SA50 110010 64/32 320000h–32FFFFh 190000h–197FFFh SA19 010011 64/32 130000h–13FFFFh 098000h–09FFFFh SA51 110011 64/32 330000h–33FFFFh 198000h–19FFFFh SA20 010100 64/32 140000h–14FFFFh 0A0000h–0A7FFFh SA52 110100 64/32 340000h–34FFFFh 1A0000h–1A7FFFh SA21 010101 64/32 150000h–15FFFFh 0A8000h–0AFFFFh SA53 110101 64/32 350000h–35FFFFh 1A8000h–1AFFFFh SA22 010110 64/32 160000h–16FFFFh 0B0000h–0B7FFFh SA54 110110 64/32 360000h–36FFFFh 1B0000h–1B7FFFh SA23 010111 64/32 170000h–17FFFFh 0B8000h–0BFFFFh SA55 110111 64/32 370000h–37FFFFh 1B8000h–1BFFFFh 1C0000h–1C7FFFh SA24 011000 64/32 180000h–18FFFFh 0C0000h–0C7FFFh SA56 111000 64/32 380000h–38FFFFh SA25 011001 64/32 190000h–19FFFFh 0C8000h–0CFFFFh SA57 111001 64/32 390000h–39FFFFh 1C8000h–1CFFFFh SA26 011010 64/32 1A0000h–1AFFFFh 0D0000h–0D7FFFh SA58 111010 64/32 3A0000h–3AFFFFh 1D0000h–1D7FFFh SA27 011011 64/32 1B0000h–1BFFFFh 0D8000h–0DFFFFh SA59 111011 64/32 3B0000h–3BFFFFh 1D8000h–1DFFFFh SA28 011100 64/32 1C0000h–1CFFFFh 0E0000h–0E7FFFh SA60 111100 64/32 3C0000h–3CFFFFh 1E0000h–1E7FFFh SA29 011101 64/32 1D0000h–1DFFFFh 0E8000h–0EFFFFh SA61 111101 64/32 3D0000h–3DFFFFh 1E8000h–1EFFFFh SA30 011110 64/32 1E0000h–1EFFFFh 0F0000h–0F7FFFh SA62 111110 64/32 3E0000h–3EFFFFh 1F0000h–1F7FFFh SA31 011111 64/32 1F0000h–1FFFFFh 0F8000h–0FFFFFh SA63 111111 64/32 3F0000h–3FFFFFh 1F8000h–1FFFFFh Document Number: 001-98525 Rev. *B Page 19 of 78 S29GL064N, S29GL032N Table 4. S29GL032N (Model 03) Top Boot Sector Addresses Sector A20–A12 Sector Size (KB/ Kwords) 8-bit Address Range 16-bit Address Range Sector A20–A12 Sector Size (KB/ Kwords) 8-bit Address Range SA0 000000xxx 64/32 SA1 000001xxx 64/32 SA2 000010xxx 64/32 020000h–02FFFFh SA3 000011xxx 64/32 030000h–03FFFFh SA4 000100xxx 64/32 040000h–04FFFFh SA5 000101xxx 64/32 050000h–05FFFFh SA6 000110xxx 64/32 060000h–06FFFFh SA7 000111xxx 64/32 070000h–07FFFFh 16-bit Address Range 000000h–00FFFFh 00000h–07FFFh SA36 100100xxx 64/32 240000h–24FFFFh 120000h–127FFFh 010000h–01FFFFh 08000h–0FFFFh SA37 100101xxx 64/32 250000h–25FFFFh 128000h–12FFFFh 10000h–17FFFh SA38 100110xxx 64/32 260000h–26FFFFh 130000h–137FFFh 18000h–1FFFFh SA39 100111xxx 64/32 270000h–27FFFFh 138000h–13FFFFh 20000h–27FFFh SA40 101000xxx 64/32 280000h–28FFFFh 140000h–147FFFh 28000h–2FFFFh SA41 101001xxx 64/32 290000h–29FFFFh 148000h–14FFFFh 30000h–37FFFh SA42 101010xxx 64/32 2A0000h–2AFFFFh 150000h–157FFFh 38000h–3FFFFh SA43 101011xxx 64/32 2B0000h–2BFFFFh 158000h–15FFFFh SA8 001000xxx 64/32 080000h–08FFFFh 40000h–47FFFh SA44 101100xxx 64/32 2C0000h–2CFFFFh 160000h–167FFFh SA9 001001xxx 64/32 090000h–09FFFFh 48000h–4FFFFh SA45 101101xxx 64/32 2D0000h–2DFFFFh 168000h–16FFFFh SA10 001010xxx 64/32 0A0000h–0AFFFFh 50000h–57FFFh SA46 101110xxx 64/32 2E0000h–2EFFFFh 170000h–177FFFh SA11 001011xxx 64/32 0B0000h–0BFFFFh 58000h–5FFFFh SA47 101111xxx 64/32 2F0000h–2FFFFFh 178000h–17FFFFh SA12 001100xxx 64/32 0C0000h–0CFFFFh 60000h–67FFFh SA48 110000xxx 64/32 300000h–30FFFFh 180000h–187FFFh SA13 001101xxx 64/32 0D0000h–0DFFFFh 68000h–6FFFFh SA49 110001xxx 64/32 310000h–31FFFFh 188000h–18FFFFh SA14 001110xxx 64/32 0E0000h–0EFFFFh 70000h–77FFFh SA50 110010xxx 64/32 320000h–32FFFFh 190000h–197FFFh SA15 001111xxx 64/32 0F0000h–0FFFFFh 78000h–7FFFFh SA51 110011xxx 64/32 330000h–33FFFFh 198000h–19FFFFh SA16 010000xxx 64/32 100000h–10FFFFh 80000h–87FFFh SA52 100100xxx 64/32 340000h–34FFFFh 1A0000h–1A7FFFh SA17 010001xxx 64/32 110000h–11FFFFh 88000h–8FFFFh SA53 110101xxx 64/32 350000h–35FFFFh 1A8000h–1AFFFFh SA18 010010xxx 64/32 120000h–12FFFFh 90000h–97FFFh SA54 110110xxx 64/32 360000h–36FFFFh 1B0000h–1B7FFFh SA19 010011xxx 64/32 130000h–13FFFFh 98000h–9FFFFh SA55 110111xxx 64/32 370000h–37FFFFh 1B8000h–1BFFFFh SA20 010100xxx 64/32 140000h–14FFFFh A0000h–A7FFFh SA56 111000xxx 64/32 380000h–38FFFFh 1C0000h–1C7FFFh SA21 010101xxx 64/32 150000h–15FFFFh A8000h–AFFFFh SA57 111001xxx 64/32 390000h–39FFFFh 1C8000h–1CFFFFh SA22 010110xxx 64/32 160000h–16FFFFh B0000h–B7FFFh SA58 111010xxx 64/32 3A0000h–3AFFFFh 1D0000h–1D7FFFh SA23 010111xxx 64/32 170000h–17FFFFh B8000h–BFFFFh SA59 111011xxx 64/32 3B0000h–3BFFFFh 1D8000h–1DFFFFh SA24 011000xxx 64/32 180000h–18FFFFh C0000h–C7FFFh SA60 111100xxx 64/32 3C0000h–3CFFFFh 1E0000h–1E7FFFh SA25 011001xxx 64/32 190000h–19FFFFh C8000h–CFFFFh SA61 111101xxx 64/32 3D0000h–3DFFFFh 1E8000h–1EFFFFh SA26 011010xxx 64/32 1A0000h–1AFFFFh D0000h–D7FFFh SA62 111110xxx 64/32 3E0000h–3EFFFFh 1F0000h–1F7FFFh SA27 011011xxx 64/32 1B0000h–1BFFFFh D8000h–DFFFFh SA63 111111000 8/4 3F0000h–3F1FFFh 1F8000h–1F8FFFh SA28 011100xxx 64/32 1C0000h–1CFFFFh E0000h–E7FFFh SA64 111111001 8/4 3F2000h–3F3FFFh 1F9000h–1F9FFFh SA29 011101xxx 64/32 1D0000h–1DFFFFh E8000h–EFFFFh SA65 111111010 8/4 3F4000h–3F5FFFh 1FA000h–1FAFFFh SA30 011110xxx 64/32 1E0000h–1EFFFFh F0000h–F7FFFh SA66 111111011 8/4 3F6000h–3F7FFFh 1FB000h–1FBFFFh SA31 011111xxx 64/32 1F0000h–1FFFFFh F8000h–FFFFFh SA67 111111100 8/4 3F8000h–3F9FFFh 1FC000h–1FCFFFh SA32 100000xxx 64/32 200000h–20FFFFh 100000h–107FFFh SA68 111111101 8/4 3FA000h–3FBFFFh 1FD000h–1FDFFFh SA33 100001xxx 64/32 210000h–21FFFFh 108000h–10FFFFh SA69 111111110 8/4 3FC000h–3FDFFFh 1FE000h–1FEFFFh SA34 100010xxx 64/32 220000h–22FFFFh 110000h–117FFFh SA70 111111111 8/4 3FE000h–3FFFFFh 1FF000h–1FFFFFh SA35 100011xxx 64/32 230000h–23FFFFh 118000h–11FFFFh Document Number: 001-98525 Rev. *B Page 20 of 78 S29GL064N, S29GL032N Table 5. S29GL032N (Model 04) Bottom Boot Sector Addresses Sector A20–A12 Sector Size (KB/ Kwords) 8-bit Address Range 16-bit Address Range Sector A20–A12 Sector Size (KB/ Kwords) 8-bit Address Range SA0 000000000 8/4 000000h–001FFFh 00000h–00FFFh SA35 011100xxx 64/32 1C0000h–1CFFFFh E0000h–E7FFFh SA1 000000001 8/4 002000h–003FFFh 01000h–01FFFh SA36 011101xxx 64/32 1D0000h–1DFFFFh E8000h–EFFFFh SA2 000000010 8/4 004000h–005FFFh 02000h–02FFFh SA37 011110xxx 64/32 1E0000h–1EFFFFh F0000h–F7FFFh 16-bit Address Range SA3 000000011 8/4 006000h–007FFFh 03000h–03FFFh SA38 011111xxx 64/32 1F0000h–1FFFFFh F8000h–FFFFFh SA4 000000100 8/4 008000h–009FFFh 04000h–04FFFh SA39 100000xxx 64/32 200000h–20FFFFh 100000h–107FFFh SA5 000000101 8/4 00A000h–00BFFFh 05000h–05FFFh SA40 100001xxx 64/32 210000h–21FFFFh 108000h–10FFFFh SA6 000000110 8/4 00C000h–00DFFFh 06000h–06FFFh SA41 100010xxx 64/32 220000h–22FFFFh 110000h–117FFFh SA7 000000111 8/4 00E000h–00FFFFh 07000h–07FFFh SA42 100011xxx 64/32 230000h–23FFFFh 118000h–11FFFFh SA8 000001xxx 64/32 010000h–01FFFFh 08000h–0FFFFh SA43 100100xxx 64/32 240000h–24FFFFh 120000h–127FFFh SA9 000010xxx 64/32 020000h–02FFFFh 10000h–17FFFh SA44 100101xxx 64/32 250000h–25FFFFh 128000h–12FFFFh SA10 000011xxx 64/32 030000h–03FFFFh 18000h–1FFFFh SA45 100110xxx 64/32 260000h–26FFFFh 130000h–137FFFh 138000h–13FFFFh SA11 000100xxx 64/32 040000h–04FFFFh 20000h–27FFFh SA46 100111xxx 64/32 270000h–27FFFFh SA12 000101xxx 64/32 050000h–05FFFFh 28000h–2FFFFh SA47 101000xxx 64/32 280000h–28FFFFh 140000h–147FFFh SA13 000110xxx 64/32 060000h–06FFFFh 30000h–37FFFh SA48 101001xxx 64/32 290000h–29FFFFh 148000h–14FFFFh SA14 000111xxx 64/32 070000h–07FFFFh 38000h–3FFFFh SA49 101010xxx 64/32 2A0000h–2AFFFFh 150000h–157FFFh SA15 001000xxx 64/32 080000h–08FFFFh 40000h–47FFFh SA50 101011xxx 64/32 2B0000h–2BFFFFh 158000h–15FFFFh SA16 001001xxx 64/32 090000h–09FFFFh 48000h–4FFFFh SA51 101100xxx 64/32 2C0000h–2CFFFFh 160000h–167FFFh SA17 001010xxx 64/32 0A0000h–0AFFFFh 50000h–57FFFh SA52 101101xxx 64/32 2D0000h–2DFFFFh 168000h–16FFFFh SA18 001011xxx 64/32 0B0000h–0BFFFFh 58000h–5FFFFh SA53 101110xxx 64/32 2E0000h–2EFFFFh 170000h–177FFFh SA19 001100xxx 64/32 0C0000h–0CFFFFh 60000h–67FFFh SA54 101111xxx 64/32 2F0000h–2FFFFFh 178000h–17FFFFh SA20 001101xxx 64/32 0D0000h–0DFFFFh 68000h–6FFFFh SA55 110000xxx 64/32 300000h–30FFFFh 180000h–187FFFh SA21 001110xxx 64/32 0E0000h–0EFFFFh 70000h–77FFFh SA56 110001xxx 64/32 310000h–31FFFFh 188000h–18FFFFh SA22 001111xxx 64/32 0F0000h–0FFFFFh 78000h–7FFFFh SA57 110010xxx 64/32 320000h–32FFFFh 190000h–197FFFh SA23 010000xxx 64/32 100000h–10FFFFh 80000h–87FFFh SA58 110011xxx 64/32 330000h–33FFFFh 198000h–19FFFFh SA24 010001xxx 64/32 110000h–11FFFFh 88000h–8FFFFh SA59 110100xxx 64/32 340000h–34FFFFh 1A0000h–1A7FFFh SA25 010010xxx 64/32 120000h–12FFFFh 90000h–97FFFh SA60 110101xxx 64/32 350000h–35FFFFh 1A8000h–1AFFFFh SA26 010011xxx 64/32 130000h–13FFFFh 98000h–9FFFFh SA61 110110xxx 64/32 360000h–36FFFFh 1B0000h–1B7FFFh SA27 010100xxx 64/32 140000h–14FFFFh A0000h–A7FFFh SA62 110111xxx 64/32 370000h–37FFFFh 1B8000h–1BFFFFh SA28 010101xxx 64/32 150000h–15FFFFh A8000h–AFFFFh SA63 111000xxx 64/32 380000h–38FFFFh 1C0000h–1C7FFFh SA29 010110xxx 64/32 160000h–16FFFFh B0000h–B7FFFh SA64 111001xxx 64/32 390000h–39FFFFh 1C8000h–1CFFFFh SA30 010111xxx 64/32 170000h–17FFFFh B8000h–BFFFFh SA65 111010xxx 64/32 3A0000h–3AFFFFh 1D0000h–1D7FFFh SA31 011000xxx 64/32 180000h–18FFFFh C0000h–C7FFFh SA66 111011xxx 64/32 3B0000h–3BFFFFh 1D8000h–1DFFFFh SA32 011001xxx 64/32 190000h–19FFFFh C8000h–CFFFFh SA67 111100xxx 64/32 3C0000h–3CFFFFh 1E0000h–1E7FFFh SA33 011010xxx 64/32 1A0000h–1AFFFFh D0000h–D7FFFh SA68 111101xxx 64/32 3D0000h–3DFFFFh 1E8000h–1EFFFFh SA34 011011xxx 64/32 1B0000h–1BFFFFh D8000h–DFFFFh SA69 111110xxx 64/32 3E0000h–3EFFFFh 1F0000h–1F7FFFh SA70 111111xxx 64/32 3F0000h–3FFFFFh 1F8000h–1FFFFFh Document Number: 001-98525 Rev. *B Page 21 of 78 S29GL064N, S29GL032N Table 6. S29GL064N (Models 01, 02, V1, V2) Sector Addresses Sector A21–A15 Sector Size (KB/ Kwords) 8-bit Address Range 16-bit Address Range Sector A21–A15 Sector Size (KB/ Kwords) 8-bit Address Range SA0 0000000 64/32 SA1 0000001 64/32 000000h–00FFFFh 000000h–007FFFh SA64 1000000 64/32 400000h–40FFFFh 200000h–207FFFh 010000h–01FFFFh 008000h–00FFFFh SA65 1000001 64/32 410000h–41FFFFh 208000h–20FFFFh SA2 0000010 64/32 020000h–02FFFFh 010000h–017FFFh SA66 1000010 64/32 420000h–42FFFFh 210000h–217FFFh SA3 SA4 0000011 64/32 030000h–03FFFFh 018000h–01FFFFh SA67 1000011 64/32 430000h–43FFFFh 218000h–21FFFFh 0000100 64/32 040000h–04FFFFh 020000h–027FFFh SA68 1000100 64/32 440000h–44FFFFh SA5 220000h–227FFFh 0000101 64/32 050000h–05FFFFh 028000h–02FFFFh SA69 1000101 64/32 450000h–45FFFFh 228000h–22FFFFh SA6 0000110 64/32 060000h–06FFFFh 030000h–037FFFh SA70 1000110 64/32 460000h–46FFFFh 230000h–237FFFh 238000h–23FFFFh 16-bit Address Range SA7 0000111 64/32 070000h–07FFFFh 038000h–03FFFFh SA71 1000111 64/32 470000h–47FFFFh SA8 0001000 64/32 080000h–08FFFFh 040000h–047FFFh SA72 1001000 64/32 480000h–48FFFFh 240000h–247FFFh SA9 0001001 64/32 090000h–09FFFFh 048000h–04FFFFh SA73 1001001 64/32 490000h–49FFFFh 248000h–24FFFFh SA10 0001010 64/32 0A0000h–0AFFFFh 050000h–057FFFh SA74 1001010 64/32 4A0000h–4AFFFFh 250000h–257FFFh 258000h–25FFFFh SA11 0001011 64/32 0B0000h–0BFFFFh 058000h–05FFFFh SA75 1001011 64/32 4B0000h–4BFFFFh SA12 0001100 64/32 0C0000h–0CFFFFh 060000h–067FFFh SA76 1001100 64/32 4C0000h–4CFFFFh 260000h–267FFFh SA13 0001101 64/32 0D0000h–0DFFFFh 068000h–06FFFFh SA77 1001101 64/32 4D0000h–4DFFFFh 268000h–26FFFFh SA14 0001110 64/32 0E0000h–0EFFFFh 070000h–077FFFh SA78 1001110 64/32 4E0000h–4EFFFFh 270000h–277FFFh 278000h–27FFFFh SA15 0001111 64/32 0F0000h–0FFFFFh 078000h–07FFFFh SA79 1001111 64/32 4F0000h–4FFFFFh SA16 0010000 64/32 100000h–10FFFFh 080000h–087FFFh SA80 1010000 64/32 500000h–50FFFFh 280000h–287FFFh SA17 0010001 64/32 110000h–11FFFFh 088000h–08FFFFh SA81 1010001 64/32 510000h–51FFFFh 288000h–28FFFFh SA18 0010010 64/32 120000h–12FFFFh 090000h–097FFFh SA82 1010010 64/32 520000h–52FFFFh 290000h–297FFFh SA19 0010011 64/32 130000h–13FFFFh 098000h–09FFFFh SA83 1010011 64/32 530000h–53FFFFh 298000h–29FFFFh SA20 0010100 64/32 140000h–14FFFFh 0A0000h–0A7FFFh SA84 1010100 64/32 540000h–54FFFFh 2A0000h–2A7FFFh SA21 0010101 64/32 150000h–15FFFFh 0A8000h–0AFFFFh SA85 1010101 64/32 550000h–55FFFFh 2A8000h–2AFFFFh SA22 0010110 64/32 160000h–16FFFFh 0B0000h–0B7FFFh SA86 1010110 64/32 560000h–56FFFFh 2B0000h–2B7FFFh SA23 0010111 64/32 170000h–17FFFFh 0B8000h–0BFFFFh SA87 1010111 64/32 570000h–57FFFFh 2B8000h–2BFFFFh SA24 0011000 64/32 180000h–18FFFFh 0C0000h–0C7FFFh SA88 1011000 64/32 580000h–58FFFFh 2C0000h–2C7FFFh SA25 0011001 64/32 190000h–19FFFFh 0C8000h–0CFFFFh SA89 1011001 64/32 590000h–59FFFFh 2C8000h–2CFFFFh SA26 0011010 64/32 1A0000h–1AFFFFh 0D0000h–0D7FFFh SA90 1011010 64/32 5A0000h–5AFFFFh 2D0000h–2D7FFFh SA27 0011011 64/32 1B0000h–1BFFFFh 0D8000h–0DFFFFh SA91 1011011 64/32 5B0000h–5BFFFFh 2D8000h–2DFFFFh SA28 0011100 64/32 1C0000h–1CFFFFh 0E0000h–0E7FFFh SA92 1011100 64/32 5C0000h–5CFFFFh 2E0000h–2E7FFFh SA29 0011101 64/32 1D0000h–1DFFFFh 0E8000h–0EFFFFh SA93 1011101 64/32 5D0000h–5DFFFFh 2E8000h–2EFFFFh SA30 0011110 64/32 1E0000h–1EFFFFh 0F0000h–0F7FFFh SA94 1011110 64/32 5E0000h–5EFFFFh 2F0000h–2F7FFFh 2F8000h–2FFFFFh SA31 0011111 64/32 1F0000h–1FFFFFh 0F8000h–0FFFFFh SA95 1011111 64/32 5F0000h–5FFFFFh SA32 0100000 64/32 200000h–20FFFFh 100000h–107FFFh SA96 1100000 64/32 600000h–60FFFFh 300000h–307FFFh SA33 0100001 64/32 210000h–21FFFFh 108000h–10FFFFh SA97 1100001 64/32 610000h–61FFFFh 308000h–30FFFFh SA34 0100010 64/32 220000h–22FFFFh 110000h–117FFFh SA98 1100010 64/32 620000h–62FFFFh 310000h–317FFFh SA35 0100011 64/32 230000h–23FFFFh 118000h–11FFFFh SA99 1100011 64/32 630000h–63FFFFh 318000h–31FFFFh SA36 0100100 64/32 240000h–24FFFFh 120000h–127FFFh SA100 1100100 64/32 640000h–64FFFFh 320000h–327FFFh SA37 0100101 64/32 250000h–25FFFFh 128000h–12FFFFh SA101 1100101 64/32 650000h–65FFFFh 328000h–32FFFFh SA38 0100110 64/32 260000h–26FFFFh 130000h–137FFFh SA102 1100110 64/32 660000h–66FFFFh 330000h–337FFFh 338000h–33FFFFh SA39 0100111 64/32 270000h–27FFFFh 138000h–13FFFFh SA103 1100111 64/32 670000h–67FFFFh SA40 0101000 64/32 280000h–28FFFFh 140000h–147FFFh SA104 1101000 64/32 680000h–68FFFFh 340000h–347FFFh SA41 0101001 64/32 290000h–29FFFFh 148000h–14FFFFh SA105 1101001 64/32 690000h–69FFFFh 348000h–34FFFFh SA42 0101010 64/32 2A0000h–2AFFFFh 150000h–157FFFh SA106 1101010 64/32 6A0000h–6AFFFFh 350000h–357FFFh Document Number: 001-98525 Rev. *B Page 22 of 78 S29GL064N, S29GL032N Table 6. S29GL064N (Models 01, 02, V1, V2) Sector Addresses (Continued) Sector A21–A15 Sector Size (KB/ Kwords) 8-bit Address Range 16-bit Address Range Sector A21–A15 Sector Size (KB/ Kwords) SA43 0101011 SA44 0101100 64/32 2B0000h–2BFFFFh 158000h–15FFFFh SA107 1101011 64/32 2C0000h–2CFFFFh 160000h–167FFFh SA108 1101100 SA45 0101101 64/32 2D0000h–2DFFFFh 168000h–16FFFFh SA109 SA46 0101110 64/32 2E0000h–2EFFFFh 170000h–177FFFh SA47 0101111 64/32 2F0000h–2FFFFFh 178000h–17FFFFh 8-bit Address Range 16-bit Address Range 64/32 6B0000h–6BFFFFh 358000h–35FFFFh 64/32 6C0000h–6CFFFFh 360000h–367FFFh 1101101 64/32 6D0000h–6DFFFFh 368000h–36FFFFh SA110 1101110 64/32 6E0000h–6EFFFFh 370000h–377FFFh SA111 1101111 64/32 6F0000h–6FFFFFh 378000h–37FFFFh SA48 0110000 64/32 300000h–30FFFFh 180000h–187FFFh SA112 1110000 64/32 700000h–70FFFFh 380000h–387FFFh SA49 0110001 64/32 310000h–31FFFFh 188000h–18FFFFh SA113 1110001 64/32 710000h–71FFFFh 388000h–38FFFFh SA50 0110010 64/32 320000h–32FFFFh 190000h–197FFFh SA114 1110010 64/32 720000h–72FFFFh 390000h–397FFFh SA51 0110011 64/32 330000h–33FFFFh 198000h–19FFFFh SA115 1110011 64/32 730000h–73FFFFh 398000h–39FFFFh SA52 0110100 64/32 340000h–34FFFFh 1A0000h–1A7FFFh SA116 1110100 64/32 740000h–74FFFFh 3A0000h–3A7FFFh SA53 0110101 64/32 350000h–35FFFFh 1A8000h–1AFFFFh SA117 1110101 64/32 750000h–75FFFFh 3A8000h–3AFFFFh SA54 0110110 64/32 360000h–36FFFFh 1B0000h–1B7FFFh SA118 1110110 64/32 760000h–76FFFFh 3B0000h–3B7FFFh SA55 0110111 64/32 370000h–37FFFFh 1B8000h–1BFFFFh SA119 1110111 64/32 770000h–77FFFFh 3B8000h–3BFFFFh SA56 0111000 64/32 380000h–38FFFFh 1C0000h–1C7FFFh SA120 1111000 64/32 780000h–78FFFFh 3C0000h–3C7FFFh SA57 0111001 64/32 390000h–39FFFFh 1C8000h–1CFFFFh SA121 1111001 64/32 790000h–79FFFFh 3C8000h–3CFFFFh SA58 0111010 64/32 3A0000h–3AFFFFh 1D0000h–1D7FFFh SA122 1111010 64/32 7A0000h–7AFFFFh 3D0000h–3D7FFFh SA59 0111011 64/32 3B0000h–3BFFFFh 1D8000h–1DFFFFh SA123 1111011 64/32 7B0000h–7BFFFFh 3D8000h–3DFFFFh SA60 0111100 64/32 3C0000h–3CFFFFh 1E0000h–1E7FFFh SA124 1111100 64/32 7C0000h–7CFFFFh 3E0000h–3E7FFFh SA61 0111101 64/32 3D0000h–3DFFFFh 1E8000h–1EFFFFh SA125 1111101 64/32 7D0000h–7DFFFFh 3E8000h–3EFFFFh SA62 0111110 64/32 3E0000h–3EFFFFh 1F0000h–1F7FFFh SA126 1111110 64/32 7E0000h–7EFFFFh 3F0000h–3F7FFFh SA63 0111111 64/32 3F0000h–3FFFFFh 1F8000h–1FFFFFh SA127 1111111 64/32 7F0000h–7FFFFFh 3F8000h–3FFFFFh 8-bit Address Range Table 7. S29GL064N (Model 03) Top Boot Sector Addresses Sector A21–A12 Sector Size (KB/ Kwords) SA0 0000000xxx 64/32 000000h–00FFFFh 000000h–007FFFh SA68 1000100xxx 64/32 440000h–44FFFFh 220000h–227FFFh SA1 0000001xxx 64/32 010000h–01FFFFh 008000h–00FFFFh SA69 1000101xxx 64/32 450000h–45FFFFh 228000h–22FFFFh SA2 0000010xxx 64/32 020000h–02FFFFh 010000h–017FFFh SA70 1000110xxx 64/32 460000h–46FFFFh 230000h–237FFFh SA3 0000011xxx 64/32 030000h–03FFFFh 018000h–01FFFFh SA71 1000111xxx 64/32 470000h–47FFFFh 238000h–23FFFFh SA4 0000100xxx 64/32 040000h–04FFFFh 020000h–027FFFh SA72 1001000xxx 64/32 480000h–48FFFFh 240000h–247FFFh SA5 0000101xxx 64/32 050000h–05FFFFh 028000h–02FFFFh SA73 1001001xxx 64/32 490000h–49FFFFh 248000h–24FFFFh SA6 0000110xxx 64/32 060000h–06FFFFh 030000h–037FFFh SA74 1001010xxx 64/32 4A0000h–4AFFFFh 250000h–257FFFh SA7 0000111xxx 64/32 070000h–07FFFFh 038000h–03FFFFh SA75 1001011xxx 64/32 4B0000h–4BFFFFh 258000h–25FFFFh SA8 0001000xxx 64/32 080000h–08FFFFh 040000h–047FFFh SA76 1001100xxx 64/32 4C0000h–4CFFFFh 260000h–267FFFh SA9 0001001xxx 64/32 090000h–09FFFFh 048000h–04FFFFh SA77 1001101xxx 64/32 4D0000h–4DFFFFh 268000h–26FFFFh SA10 0001010xxx 64/32 0A0000h–0AFFFFh 050000h–057FFFh SA78 1001110xxx 64/32 4E0000h–4EFFFFh 270000h–277FFFh SA11 0001011xxx 64/32 0B0000h–0BFFFFh 058000h–05FFFFh SA79 1001111xxx 64/32 4F0000h–4FFFFFh 278000h–27FFFFh 8-bit Address Range 16-bit Address Range Sector A21–A12 Sector Size (KB/ Kwords) 16-bit Address Range SA12 0001100xxx 64/32 0C0000h–0CFFFFh 060000h–067FFFh SA80 1010000xxx 64/32 500000h–50FFFFh 280000h–287FFFh SA13 0001101xxx 64/32 0D0000h–0DFFFFh 068000h–06FFFFh SA81 1010001xxx 64/32 510000h–51FFFFh 288000h–28FFFFh SA14 0001110xxx 64/32 0E0000h–0EFFFFh 070000h–077FFFh SA82 1010010xxx 64/32 520000h–52FFFFh 290000h–297FFFh SA15 0001111xxx 64/32 0F0000h–0FFFFFh 078000h–07FFFFh SA83 1010011xxx 64/32 530000h–53FFFFh 298000h–29FFFFh SA16 0010000xxx 64/32 100000h–10FFFFh 080000h–087FFFh SA84 1010100xxx 64/32 540000h–54FFFFh 2A0000h–2A7FFFh SA17 0010001xxx 64/32 110000h–11FFFFh 088000h–08FFFFh SA85 1010101xxx 64/32 550000h–55FFFFh 2A8000h–2AFFFFh Document Number: 001-98525 Rev. *B Page 23 of 78 S29GL064N, S29GL032N Table 7. S29GL064N (Model 03) Top Boot Sector Addresses (Continued) Sector Size (KB/ Kwords) Sector A21–A12 Sector Size (KB/ Kwords) 8-bit Address Range 090000h–097FFFh SA86 1010110xxx 64/32 560000h–56FFFFh 2B0000h–2B7FFFh 098000h–09FFFFh SA87 1010111xxx 64/32 570000h–57FFFFh 2B8000h–2BFFFFh SA88 1011000xxx 64/32 580000h–58FFFFh 2C0000h–2C7FFFh 64/32 590000h–59FFFFh 2C8000h–2CFFFFh 64/32 5A0000h–5AFFFFh 2D0000h–2D7FFFh 64/32 5B0000h–5BFFFFh 2D8000h–2DFFFFh 1011100xxx 64/32 5C0000h–5CFFFFh 2E0000h–2E7FFFh SA93 1011101xxx 64/32 5D0000h–5DFFFFh 2E8000h–2EFFFFh SA94 1011110xxx 64/32 5E0000h–5EFFFFh 2F0000h–2F7FFFh 0D8000h–0DFFFFh SA95 1011111xxx 64/32 5F0000h–5FFFFFh 2F8000h–2FFFFFh 1C0000h–1CFFFFh 0E0000h–0E7FFFh SA96 1100000xxx 64/32 600000h–60FFFFh 300000h–307FFFh 64/32 1D0000h–1DFFFFh 0E8000h–0EFFFFh SA97 1100001xxx 64/32 610000h–61FFFFh 308000h–30FFFFh 64/32 1E0000h–1EFFFFh 0F0000h–0F7FFFh SA98 1100010xxx 64/32 620000h–62FFFFh 310000h–317FFFh 64/32 1F0000h–1FFFFFh 0F8000h–0FFFFFh SA99 1100011xxx 64/32 630000h–63FFFFh 318000h–31FFFFh 0100000xxx 64/32 200000h–20FFFFh 100000h–107FFFh SA100 1100100xxx 64/32 640000h–64FFFFh 320000h–327FFFh SA33 0100001xxx 64/32 210000h–21FFFFh 108000h–10FFFFh SA101 1100101xxx 64/32 650000h–65FFFFh 328000h–32FFFFh SA34 0100010xxx 64/32 220000h–22FFFFh 110000h–117FFFh SA102 1100110xxx 64/32 660000h–66FFFFh 330000h–337FFFh SA35 0101011xxx 64/32 230000h–23FFFFh 118000h–11FFFFh SA103 1100111xxx 64/32 670000h–67FFFFh 338000h–33FFFFh SA36 0100100xxx 64/32 240000h–24FFFFh 120000h–127FFFh SA104 1101000xxx 64/32 680000h–68FFFFh 340000h–347FFFh SA37 0100101xxx 64/32 250000h–25FFFFh 128000h–12FFFFh SA105 1101001xxx 64/32 690000h–69FFFFh 348000h–34FFFFh SA38 0100110xxx 64/32 260000h–26FFFFh 130000h–137FFFh SA106 1101010xxx 64/32 6A0000h–6AFFFFh 350000h–357FFFh SA39 0100111xxx 64/32 270000h–27FFFFh 138000h–13FFFFh SA107 1101011xxx 64/32 6B0000h–6BFFFFh 358000h–35FFFFh SA40 0101000xxx 64/32 280000h–28FFFFh 140000h–147FFFh SA108 1101100xxx 64/32 6C0000h–6CFFFFh 360000h–367FFFh 8-bit Address Range 16-bit Address Range Sector A21–A12 SA18 0010010xxx 64/32 120000h–12FFFFh SA19 0010011xxx 64/32 130000h–13FFFFh SA20 0010100xxx 64/32 140000h–14FFFFh 0A0000h–0A7FFFh SA21 0010101xxx 64/32 150000h–15FFFFh 0A8000h–0AFFFFh SA89 1011001xxx SA22 0010110xxx 64/32 160000h–16FFFFh 0B0000h–0B7FFFh SA90 1011010xxx SA23 0010111xxx 64/32 170000h–17FFFFh 0B8000h–0BFFFFh SA91 1011011xxx SA24 0011000xxx 64/32 180000h–18FFFFh 0C0000h–0C7FFFh SA92 SA25 0011001xxx 64/32 190000h–19FFFFh 0C8000h–0CFFFFh SA26 0011010xxx 64/32 1A0000h–1AFFFFh 0D0000h–0D7FFFh SA27 0011011xxx 64/32 1B0000h–1BFFFFh SA28 0011100xxx 64/32 SA29 0011101xxx SA30 0011110xxx SA31 0011111xxx SA32 Document Number: 001-98525 Rev. *B 16-bit Address Range Page 24 of 78 S29GL064N, S29GL032N Table 7. S29GL064N (Model 03) Top Boot Sector Addresses (Continued) Sector A21–A12 Sector Size (KB/ Kwords) SA41 0101001xxx SA42 0101010xxx SA43 Sector Size (KB/ Kwords) 8-bit Address Range 16-bit Address Range 1101101xxx 64/32 6D0000h–6DFFFFh 368000h–36FFFFh 1101110xxx 64/32 6E0000h–6EFFFFh 370000h–377FFFh SA111 1101111xxx 64/32 6F0000h–6FFFFFh 378000h–37FFFFh 160000h–167FFFh SA112 1110000xxx 64/32 700000h–70FFFFh 380000h–387FFFh 168000h–16FFFFh SA113 1110001xxx 64/32 710000h–71FFFFh 388000h–38FFFFh 170000h–177FFFh SA114 1110010xxx 64/32 720000h–72FFFFh 390000h–397FFFh 178000h–17FFFFh SA115 1110011xxx 64/32 730000h–73FFFFh 398000h–39FFFFh 180000h–187FFFh SA116 1110100xxx 64/32 740000h–74FFFFh 3A0000h–3A7FFFh 188000h–18FFFFh SA117 1110101xxx 64/32 750000h–75FFFFh 3A8000h–3AFFFFh 190000h–197FFFh SA118 1110110xxx 64/32 760000h–76FFFFh 3B0000h–3B7FFFh 198000h–19FFFFh SA119 1110111xxx 64/32 770000h–77FFFFh 3B8000h–3BFFFFh 8-bit Address Range 16-bit Address Range Sector A21–A12 64/32 290000h–29FFFFh 148000h–14FFFFh SA109 64/32 2A0000h–2AFFFFh 150000h–157FFFh SA110 0101011xxx 64/32 2B0000h–2BFFFFh 158000h–15FFFFh SA44 0101100xxx 64/32 2C0000h–2CFFFFh SA45 0101101xxx 64/32 2D0000h–2DFFFFh SA46 0101110xxx 64/32 2E0000h–2EFFFFh SA47 0101111xxx 64/32 2F0000h–2FFFFFh SA48 0110000xxx 64/32 300000h–30FFFFh SA49 0110001xxx 64/32 310000h–31FFFFh SA50 0110010xxx 64/32 320000h–32FFFFh SA51 0110011xxx 64/32 330000h–33FFFFh SA52 0110100xxx 64/32 340000h–34FFFFh 1A0000h–1A7FFFh SA120 1111000xxx 64/32 780000h–78FFFFh 3C0000h–3C7FFFh SA53 0110101xxx 64/32 350000h–35FFFFh 1A8000h–1AFFFFh SA121 1111001xxx 64/32 790000h–79FFFFh 3C8000h–3CFFFFh SA54 0110110xxx 64/32 360000h–36FFFFh 1B0000h–1B7FFFh SA122 1111010xxx 64/32 7A0000h–7AFFFFh 3D0000h–3D7FFFh SA55 0110111xxx 64/32 370000h–37FFFFh 1B8000h–1BFFFFh SA123 1111011xxx 64/32 7B0000h–7BFFFFh 3D8000h–3DFFFFh SA56 0111000xxx 64/32 380000h–38FFFFh 1C0000h–1C7FFFh SA124 1111100xxx 64/32 7C0000h–7CFFFFh 3E0000h–3E7FFFh SA57 0111001xxx 64/32 390000h–39FFFFh 1C8000h–1CFFFFh SA125 1111101xxx 64/32 7D0000h–7DFFFFh 3E8000h–3EFFFFh SA58 0111010xxx 64/32 3A0000h–3AFFFFh 1D0000h–1D7FFFh SA126 1111110xxx 64/32 7E0000h–7EFFFFh 3F0000h–3F7FFFh SA59 0111011xxx 64/32 3B0000h–3BFFFFh 1D8000h–1DFFFFh SA127 1111111000 8/4 7F0000h–7F1FFFh 3F8000h–3F8FFFh SA60 0111100xxx 64/32 3C0000h–3CFFFFh 1E0000h–1E7FFFh SA128 1111111001 8/4 7F2000h–7F3FFFh 3F9000h–3F9FFFh SA61 0111101xxx 64/32 3D0000h–3DFFFFh 1E8000h–1EFFFFh SA129 1111111010 8/4 7F4000h–7F5FFFh 3FA000h–3FAFFFh SA62 0111110xxx 64/32 3E0000h–3EFFFFh 1F0000h–1F7FFFh SA130 1111111011 8/4 7F6000h–7F7FFFh 3FB000h–3FBFFFh SA63 0111111xxx 64/32 3F0000h–3FFFFFh 1F8000h–1FFFFFh SA131 1111111100 8/4 7F8000h–7F9FFFh 3FC000h–3FCFFFh SA64 1000000xxx 64/32 400000h–40FFFFh 200000h–207FFFh SA132 1111111101 8/4 7FA000h–7FBFFFh 3FD000h–3FDFFFh SA65 1000001xxx 64/32 410000h–41FFFFh 208000h–20FFFFh SA133 1111111110 8/4 7FC000h–7FDFFFh 3FE000h–3FEFFFh SA66 1000010xxx 64/32 420000h–42FFFFh 210000h–217FFFh SA134 1111111111 8/4 7FE000h–7FFFFFh 3FF000h–3FFFFFh SA67 1000011xxx 64/32 430000h–43FFFFh 218000h–21FFFFh Table 8. S29GL064N (Model 04) Bottom Boot Sector Addresses Sector A21–A12 Sector Size (KB/ Kwords) 8-bit Address Range 16-bit Address Range Sector A21–A12 Sector Size (KB/ Kwords) 8-bit Address Range SA0 0000000000 8/4 000000h–001FFFh 000000h–000FFFh SA45 0100110xxx 64/32 260000h–26FFFFh 130000h–137FFFh SA1 0000000001 8/4 002000h–003FFFh 001000h–001FFFh SA46 0100111xxx 64/32 270000h–27FFFFh 138000h–13FFFFh SA2 0000000010 8/4 004000h–005FFFh 002000h–002FFFh SA47 0101000xxx 64/32 280000h–28FFFFh 140000h–147FFFh SA3 0000000011 8/4 006000h–007FFFh 003000h–003FFFh SA48 0101001xxx 64/32 290000h–29FFFFh 148000h–14FFFFh 16-bit Address Range SA4 0000000100 8/4 008000h–009FFFh 004000h–004FFFh SA49 0101010xxx 64/32 2A0000h–2AFFFFh 150000h–157FFFh SA5 0000000101 8/4 00A000h–00BFFFh 005000h–005FFFh SA50 0101011xxx 64/32 2B0000h–2BFFFFh 158000h–15FFFFh SA6 0000000110 8/4 00C000h–00DFFFh 006000h–006FFFh SA51 0101100xxx 64/32 2C0000h–2CFFFFh 160000h–167FFFh SA7 0000000111 8/4 00E000h–00FFFFh 007000h–007FFFh SA52 0101101xxx 64/32 2D0000h–2DFFFFh 168000h–16FFFFh SA8 0000001xxx 64/32 010000h–01FFFFh 008000h–00FFFFh SA53 0101110xxx 64/32 2E0000h–2EFFFFh 170000h–177FFFh SA9 0000010xxx 64/32 020000h–02FFFFh 010000h–017FFFh SA54 0101111xxx 64/32 2F0000h–2FFFFFh 178000h–17FFFFh SA10 0000011xxx 64/32 030000h–03FFFFh 018000h–01FFFFh SA55 0110000xxx 64/32 300000h–30FFFFh 180000h–187FFFh SA11 0000100xxx 64/32 040000h–04FFFFh 020000h–027FFFh SA56 0110001xxx 64/32 310000h–31FFFFh 188000h–18FFFFh Document Number: 001-98525 Rev. *B Page 25 of 78 S29GL064N, S29GL032N Table 8. S29GL064N (Model 04) Bottom Boot Sector Addresses (Continued) Sector A21–A12 Sector Size (KB/ Kwords) 8-bit Address Range 16-bit Address Range Sector A21–A12 Sector Size (KB/ Kwords) 8-bit Address Range SA12 0000101xxx 64/32 050000h–05FFFFh 028000h–02FFFFh SA57 0110010xxx 64/32 320000h–32FFFFh 190000h–197FFFh SA13 0000110xxx 64/32 060000h–06FFFFh 030000h–037FFFh SA58 0110011xxx 64/32 330000h–33FFFFh 198000h–19FFFFh SA14 0000111xxx 64/32 070000h–07FFFFh 038000h–03FFFFh SA59 0110100xxx 64/32 340000h–34FFFFh 1A0000h–1A7FFFh 1A8000h–1AFFFFh 16-bit Address Range SA15 0001000xxx 64/32 080000h–08FFFFh 040000h–047FFFh SA60 0110101xxx 64/32 350000h–35FFFFh SA16 0001001xxx 64/32 090000h–09FFFFh 048000h–04FFFFh SA61 0110110xxx 64/32 360000h–36FFFFh 1B0000h–1B7FFFh SA17 0001010xxx 64/32 0A0000h–0AFFFFh 050000h–057FFFh SA62 0110111xxx 64/32 370000h–37FFFFh 1B8000h–1BFFFFh SA18 0001011xxx 64/32 0B0000h–0BFFFFh 058000h–05FFFFh SA63 0111000xxx 64/32 380000h–38FFFFh 1C0000h–1C7FFFh 1C8000h–1CFFFFh SA19 0001100xxx 64/32 0C0000h–0CFFFFh 060000h–067FFFh SA64 0111001xxx 64/32 390000h–39FFFFh SA20 0001101xxx 64/32 0D0000h–0DFFFFh 068000h–06FFFFh SA65 0111010xxx 64/32 3A0000h–3AFFFFh 1D0000h–1D7FFFh SA21 0001110xxx 64/32 0E0000h–0EFFFFh 070000h–077FFFh SA66 0111011xxx 64/32 3B0000h–3BFFFFh 1D8000h–1DFFFFh SA22 0001111xxx 64/32 0F0000h–0FFFFFh 078000h–07FFFFh SA67 0111100xxx 64/32 3C0000h–3CFFFFh 1E0000h–1E7FFFh SA23 0010000xxx 64/32 100000h–10FFFFh 080000h–087FFFh SA68 0111101xxx 64/32 3D0000h–3DFFFFh 1E8000h–1EFFFFh SA24 0010001xxx 64/32 110000h–11FFFFh 088000h–08FFFFh SA69 0111110xxx 64/32 3E0000h–3EFFFFh 1F0000h–1F7FFFh SA25 0010010xxx 64/32 120000h–12FFFFh 090000h–097FFFh SA70 0111111xxx 64/32 3F0000h–3FFFFFh 1F8000h–1FFFFFh SA26 0010011xxx 64/32 130000h–13FFFFh 098000h–09FFFFh SA71 1000000xxx 64/32 400000h–40FFFFh 200000h–207FFFh SA27 0010100xxx 64/32 140000h–14FFFFh 0A0000h–0A7FFFh SA72 1000001xxx 64/32 410000h–41FFFFh 208000h–20FFFFh SA28 0010101xxx 64/32 150000h–15FFFFh 0A8000h–0AFFFFh SA73 1000010xxx 64/32 420000h–42FFFFh 210000h–217FFFh SA29 0010110xxx 64/32 160000h–16FFFFh 0B0000h–0B7FFFh SA74 1000011xxx 64/32 430000h–43FFFFh 218000h–21FFFFh SA30 0010111xxx 64/32 170000h–17FFFFh 0B8000h–0BFFFFh SA75 1000100xxx 64/32 440000h–44FFFFh 220000h–227FFFh 228000h–22FFFFh SA31 0011000xxx 64/32 180000h–18FFFFh 0C0000h–0C7FFFh SA76 1000101xxx 64/32 450000h–45FFFFh SA32 0011001xxx 64/32 190000h–19FFFFh 0C8000h–0CFFFFh SA77 1000110xxx 64/32 460000h–46FFFFh 230000h–237FFFh SA33 0011010xxx 64/32 1A0000h–1AFFFFh 0D0000h–0D7FFFh SA78 1000111xxx 64/32 470000h–47FFFFh 238000h–23FFFFh SA34 0011011xxx 64/32 1B0000h–1BFFFFh 0D8000h–0DFFFFh SA79 1001000xxx 64/32 480000h–48FFFFh 240000h–247FFFh 248000h–24FFFFh SA35 0011100xxx 64/32 1C0000h–1CFFFFh 0E0000h–0E7FFFh SA80 1001001xxx 64/32 490000h–49FFFFh SA36 0011101xxx 64/32 1D0000h–1DFFFFh 0E8000h–0EFFFFh SA81 1001010xxx 64/32 4A0000h–4AFFFFh 250000h–257FFFh SA37 0011110xxx 64/32 1E0000h–1EFFFFh 0F0000h–0F7FFFh SA82 1001011xxx 64/32 4B0000h–4BFFFFh 258000h–25FFFFh SA38 0011111xxx 64/32 1F0000h–1FFFFFh 0F8000h–0FFFFFh SA83 1001100xxx 64/32 4C0000h–4CFFFFh 260000h–267FFFh SA39 0100000xxx 64/32 200000h–20FFFFh 100000h–107FFFh SA84 1001101xxx 64/32 4D0000h–4DFFFFh 268000h–26FFFFh SA40 0100001xxx 64/32 210000h–21FFFFh 108000h–10FFFFh SA85 1001110xxx 64/32 4E0000h–4EFFFFh 270000h–277FFFh SA41 0100010xxx 64/32 220000h–22FFFFh 110000h–117FFFh SA86 1001111xxx 64/32 4F0000h–4FFFFFh 278000h–27FFFFh SA42 0100011xxx 64/32 230000h–23FFFFh 118000h–11FFFFh SA87 1010000xxx 64/32 500000h–50FFFFh 280000h–28FFFFh SA43 0100100xxx 64/32 240000h–24FFFFh 120000h–127FFFh SA88 1010001xxx 64/32 510000h–51FFFFh 288000h–28FFFFh SA44 0100101xxx 64/32 250000h–25FFFFh 128000h–12FFFFh SA89 1010010xxx 64/32 520000h–52FFFFh 290000h–297FFFh SA90 1010011xxx 64/32 530000h–53FFFFh 298000h–29FFFFh SA112 1101001xxx 64/32 690000h–69FFFFh 348000h–34FFFFh SA91 1010100xxx 64/32 540000h–54FFFFh 2A0000h–2A7FFFh SA113 1101010xxx 64/32 6A0000h–6AFFFFh 350000h–357FFFh SA92 1010101xxx 64/32 550000h–55FFFFh 2A8000h–2AFFFFh SA114 1101011xxx 64/32 6B0000h–6BFFFFh 358000h–35FFFFh SA93 1010110xxx 64/32 560000h–56FFFFh 2B0000h–2B7FFFh SA115 1101100xxx 64/32 6C0000h–6CFFFFh 360000h–367FFFh SA94 1010111xxx 64/32 570000h–57FFFFh 2B8000h–2BFFFFh SA116 1101101xxx 64/32 6D0000h–6DFFFFh 368000h–36FFFFh SA95 1011000xxx 64/32 580000h–58FFFFh 2C0000h–2C7FFFh SA117 1101110xxx 64/32 6E0000h–6EFFFFh 370000h–377FFFh 378000h–37FFFFh SA96 1011001xxx 64/32 590000h–59FFFFh 2C8000h–2CFFFFh SA118 1101111xxx 64/32 6F0000h–6FFFFFh SA97 1011010xxx 64/32 5A0000h–5AFFFFh 2D0000h–2D7FFFh SA119 1110000xxx 64/32 700000h–70FFFFh 380000h–387FFFh SA98 1011011xxx 64/32 5B0000h–5BFFFFh 2D8000h–2DFFFFh SA120 1110001xxx 64/32 710000h–71FFFFh 388000h–38FFFFh SA99 1011100xxx 64/32 5C0000h–5CFFFFh 2E0000h–2E7FFFh SA121 1110010xxx 64/32 720000h–72FFFFh 390000h–397FFFh SA100 1011101xxx 64/32 5D0000h–5DFFFFh 2E8000h–2EFFFFh SA122 1110011xxx 64/32 730000h–73FFFFh 398000h–39FFFFh Document Number: 001-98525 Rev. *B Page 26 of 78 S29GL064N, S29GL032N Table 8. S29GL064N (Model 04) Bottom Boot Sector Addresses (Continued) Sector A21–A12 Sector Size (KB/ Kwords) 8-bit Address Range 16-bit Address Range Sector A21–A12 Sector Size (KB/ Kwords) 8-bit Address Range SA101 1011110xxx 64/32 SA102 1011111xxx 64/32 5E0000h–5EFFFFh 2F0000h–2F7FFFh SA123 1110100xxx 64/32 740000h–74FFFFh 3A0000h–3A7FFFh 5F0000h–5FFFFFh 2F8000h–2FFFFFh SA124 1110101xxx 64/32 750000h–75FFFFh 3A8000h–3AFFFFh SA103 1100000xxx 64/32 600000h–60FFFFh 300000h–307FFFh SA125 1110110xxx 64/32 760000h–76FFFFh 3B0000h–3B7FFFh SA104 SA105 1100001xxx 64/32 610000h–61FFFFh 308000h–30FFFFh SA126 1110111xxx 64/32 770000h–77FFFFh 3B8000h–3BFFFFh 1100010xxx 64/32 620000h–62FFFFh 310000h–317FFFh SA127 1111000xxx 64/32 780000h–78FFFFh 3C0000h–3C7FFFh 3C8000h–3CFFFFh 16-bit Address Range SA106 1100011xxx 64/32 630000h–63FFFFh 318000h–31FFFFh SA128 1111001xxx 64/32 790000h–79FFFFh SA107 1100100xxx 64/32 640000h–64FFFFh 320000h–327FFFh SA129 1111010xxx 64/32 7A0000h–7AFFFFh 3D0000h–3D7FFFh SA108 1100101xxx 64/32 650000h–65FFFFh 328000h–32FFFFh SA130 1111011xxx 64/32 7B0000h–7BFFFFh 3D8000h–3DFFFFh SA109 1100110xxx 64/32 660000h–66FFFFh 330000h–337FFFh SA131 1111100xxx 64/32 7C0000h–7CFFFFh 3E0000h–3E7FFFh SA110 1100111xxx 64/32 670000h–67FFFFh 338000h–33FFFFh SA132 1111101xxx 64/32 7D0000h–7DFFFFh 3E8000h–3EFFFFh SA111 1101000xxx 64/32 680000h–68FFFFh 340000h–347FFFh SA133 1111110xxx 64/32 7E0000h–7EFFFFh 3F0000h–3F7FFFh SA134 1111111xxx 64/32 7F0000h–7FFFFFh 3F8000h–3FFFFFh Table 9. S29GL064N (Models 06, 07, V6, V7) Sector Addresses Sector A21–A15 16-bit Address Range Sector A21–A15 SA0 0000000 000000–007FFF SA64 1000000 16-bit Address Range 100000–107FFF SA1 0000001 008000–00FFFF SA65 1000001 108000–10FFFF SA2 0000010 010000–017FFF SA66 1000010 110000–117FFF SA3 0000011 018000–01FFFF SA67 1000011 118000–11FFFF SA4 0000100 020000–027FFF SA68 1000100 120000–127FFF SA5 0000101 028000–02FFFF SA69 1000101 128000–12FFFF SA6 0000110 030000–037FFF SA70 1000110 130000–137FFF SA7 0000111 038000–03FFFF SA71 1000111 138000–13FFFF SA8 0001000 040000–047FFF SA72 1001000 140000–147FFF SA9 0001001 048000–04FFFF SA73 1001001 148000–14FFFF SA10 0001010 050000–057FFF SA74 1001010 150000–157FFF 158000–15FFFF SA11 0001011 058000–05FFFF SA75 1001011 SA12 0001100 060000–067FFF SA76 1001100 160000–167FFF SA13 0001101 068000–06FFFF SA77 1001101 168000–16FFFF SA14 0001110 070000–077FFF SA78 1001110 170000–177FFF SA15 0001111 078000–07FFFF SA79 1001111 178000–17FFFF SA16 0010000 080000–087FFF SA80 1010000 180000–187FFF SA17 0010001 088000–08FFFF SA81 1010001 188000–18FFFF SA18 0010010 090000–097FFF SA82 1010010 190000–197FFF SA19 0010011 098000–09FFFF SA83 1010011 198000–19FFFF SA20 0010100 0A0000–0A7FFF SA84 1010100 1A0000–1A7FFF SA21 0010101 0A8000–0AFFFF SA85 1010101 1A8000–1AFFFF SA22 0010110 0B0000–0B7FFF SA86 1010110 1B0000–1B7FFF SA23 0010111 0B8000–0BFFFF SA87 1010111 1B8000–1BFFFF SA24 0011000 0C0000–0C7FFF SA88 1011000 1C0000–1C7FFF SA25 0011001 0C8000–0CFFFF SA89 1011001 1C8000–1CFFFF SA26 0011010 0D0000–0D7FFF SA90 1011010 1D0000–1D7FFF SA27 0011011 0D8000–0DFFFF SA91 1011011 1D8000–1DFFFF Document Number: 001-98525 Rev. *B Page 27 of 78 S29GL064N, S29GL032N Table 9. S29GL064N (Models 06, 07, V6, V7) Sector Addresses (Continued) Sector A21–A15 16-bit Address Range Sector A21–A15 16-bit Address Range SA28 0011100 0E0000–0E7FFF SA92 1011100 1E0000–1E7FFF SA29 0011101 0E8000–0EFFFF SA93 1011101 1E8000–1EFFFF SA30 0011110 0F0000–0F7FFF SA94 1011110 1F0000–1F7FFF SA31 0011111 0F8000–0FFFFF SA95 1011111 1F8000–1FFFFF SA32 0100000 200000–207FFF SA96 1100000 300000–307FFF SA33 0100001 208000–20FFFF SA97 1100001 308000–30FFFF SA34 0100010 210000–217FFF SA98 1100010 310000–317FFF SA35 0100011 218000–21FFFF SA99 1100011 318000–31FFFF SA36 0100100 220000–227FFF SA100 1100100 320000–327FFF SA37 0100101 228000–22FFFF SA101 1100101 328000–32FFFF SA38 0100110 230000–237FFF SA102 1100110 330000–337FFF SA39 0100111 238000–23FFFF SA103 1100111 338000–33FFFF SA40 0101000 240000–247FFF SA104 1101000 340000–347FFF SA41 0101001 248000–24FFFF SA105 1101001 348000–34FFFF SA42 0101010 250000–257FFF SA106 1101010 350000–357FFF SA43 0101011 258000–25FFFF SA107 1101011 358000–35FFFF SA44 0101100 260000–267FFF SA108 1101100 360000–367FFF SA45 0101101 268000–26FFFF SA109 1101101 368000–36FFFF SA46 0101110 270000–277FFF SA110 1101110 370000–377FFF SA47 0101111 278000–27FFFF SA111 1101111 378000–37FFFF SA48 0110000 280000–287FFF SA112 1110000 380000–387FFF SA49 0110001 288000–28FFFF SA113 1110001 388000–38FFFF SA50 0110010 290000–297FFF SA114 1110010 390000–397FFF SA51 0110011 298000–29FFFF SA115 1110011 398000–39FFFF SA52 0110100 2A0000–2A7FFF SA116 1110100 3A0000–3A7FFF SA53 0110101 2A8000–2AFFFF SA117 1110101 3A8000–3AFFFF SA54 0110110 2B0000–2B7FFF SA118 1110110 3B0000–3B7FFF SA55 0110111 2B8000–2BFFFF SA119 1110111 3B8000–3BFFFF SA56 0111000 2C0000–2C7FFF SA120 1111000 3C0000–3C7FFF SA57 0111001 2C8000–2CFFFF SA121 1111001 3C8000–3CFFFF SA58 0111010 2D0000–2D7FFF SA122 1111010 3D0000–3D7FFF SA59 0111011 2D8000–2DFFFF SA123 1111011 3D8000–3DFFFF SA60 0111100 2E0000–2E7FFF SA124 1111100 3E0000–3E7FFF SA61 0111101 2E8000–2EFFFF SA125 1111101 3E8000–3EFFFF SA62 0111110 2F0000–2F7FFF SA126 1111110 3F0000–3F7FFF SA63 0111111 2F8000–2FFFFF SA127 1111111 3F8000–3FFFFF Document Number: 001-98525 Rev. *B Page 28 of 78 S29GL064N, S29GL032N 8.8 Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins A6, A3, A2, A1, and A0 must be as shown in Table 10 on page 29. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see Table 3 - Table 9). Table 10 shows the remaining address bits that are don’t care. When all necessary bits are set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 17 on page 47 and Table 19 on page 50. This method does not require VID. Refer to the Autoselect Command Sequence section for more information. Table 10. Autoselect Codes, (High Voltage Method) DQ7 to DQ0 Description Manufacturer ID: Cypress Products CE# OE# L L WE# Amax to A15 A14 to A10 A9 X X VID H A8 to A7 A6 X L DQ8 to DQ15 A5 to A4 A3 to A2 A1 X L L Model Number A0 BYTE# = VIH BYTE# = VIL 01, 02 V1, V2 03, 04 06, 07, V6, V7 L 00 X 01h 01h 01h H 22 X 7Eh 7Eh 7Eh H L 22 X 0Ch 10h 13h 01h S29GL064N L H Cycle 3 H H H 22 X 01h 00h (04, bottom boot) 01h (03, top boot) S29GL032N L Cycle 2 Cycle 1 Cycle 1 L L H 22 X 7Eh 7Eh H H L 22 X 1Dh 1Ah 00h 00h (04, bottom boot) 01h (03, top boot) Cycle 2 L L L L H X H X X X VID VID X X L L X X Cycle 3 H H H 22 X Sector Protection Verification L L H SA X VID X L X L H L X X Secured Silicon Sector Indicator Bit (DQ7), WP# protects highest address sector L L H X X VID X L X L H H X X Secured Silicon Sector Indicator Bit (DQ7), WP# protects lowest address sector L L H X X VID X L X L H H X X 01h (protected), 00h (unprotected) For S29GL064N and S29GL032N: 9A (factory locked), 1A (not factory locked) For S29GL064N and S29GL032N: 8A (factory locked), 0A (not factory locked) Legend L = Logic Low = VIL H = Logic High = VIH SA = Sector Address X = Don’t care Document Number: 001-98525 Rev. *B Page 29 of 78 S29GL064N, S29GL032N 8.9 Advanced Sector Protection The device features several levels of sector protection, which can disable both the program and erase operations in certain sectors: 8.9.1 Persistent Sector Protection A command sector protection method that replaces the old 12 V controlled protection method. 8.9.2 Password Sector Protection A highly sophisticated protection method that requires a password before changes to certain sectors are permitted 8.9.3 WP# Hardware Protection A write protect pin that can prevent program or erase operations in the outermost sectors. The WP# Hardware Protection feature is always available, independent of the software managed protection method chosen. 8.9.4 Selecting a Sector Protection Mode All parts default to operate in the Persistent Sector Protection mode. The user must then choose if the Persistent or Password Protection method is most desirable. There are two one-time programmable non-volatile bits that define which sector protection method is used. If the user decides to continue using the Persistent Sector Protection method, they must set the Persistent Sector Protection Mode Locking Bit. This permanently sets the part to operate only using Persistent Sector Protection. If the user decides to use the password method, they must set the Password Mode Locking Bit. This permanently sets the part to operate only using password sector protection. It is important to remember that setting either the Persistent Sector Protection Mode Locking Bit or the Password Mode Locking Bit permanently selects the protection mode. It is not possible to switch between the two methods once a locking bit is set. It is important that one mode is explicitly selected when the device is first programmed, rather than relying on the default mode alone. This is so that it is not possible for a system program or virus to later set the Password Mode Locking Bit, which would cause an unexpected shift from the default Persistent Sector Protection Mode into the Password Protection Mode. The device is shipped with all sectors unprotected. Cypress offers the option of programming and protecting sectors at the factory prior to shipping the device through the ExpressFlash™ Service. Contact your sales representative for details. It is possible to determine whether a sector is protected or unprotected. See Autoselect Command Sequence on page 39 for details. 8.10 Lock Register The Lock Register consists of 3 bits (DQ2, DQ1, and DQ0). These DQ2, DQ1, DQ0 bits of the Lock Register are programmable by the user. Users are not allowed to program both DQ2 and DQ1 bits of the Lock Register to the 00 state. If the user tries to program DQ2 and DQ1 bits of the Lock Register to the 00 state, the device aborts the Lock Register back to the default 11 state. The programming time of the Lock Register is same as the typical word programming time (tWHWH1) without utilizing the Write Buffer of the device. During a Lock Register programming sequence execution, the DQ6 Toggle Bit I toggles until the programming of the Lock Register has completed to indicate programming status. All Lock Register bits are readable to allow users to verify Lock Register statuses. The Customer Secured Silicon Sector Protection Bit is DQ0, Persistent Protection Mode Lock Bit is DQ1, and Password Protection Mode Lock Bit is DQ2 are accessible by all users. Each of these bits are non-volatile. DQ15-DQ3 are reserved and must be 1's when the user tries to program the DQ2, DQ1, and DQ0 bits of the Lock Register. The user is not required to program DQ2, DQ1 and DQ0 bits of the Lock Register at the same time. This allows users to lock the Secured Silicon Sector and then set the device either permanently into Password Protection Mode or Persistent Protection Mode and then lock the Secured Silicon Sector at separate instances and time frames.  Secured Silicon Sector Protection allows the user to lock the Secured Silicon Sector area  Persistent Protection Mode Lock Bit allows the user to set the device permanently to operate in the Persistent Protection Mode  Password Protection Mode Lock Bit allows the user to set the device permanently to operate in the Password Protection Mode Document Number: 001-98525 Rev. *B Page 30 of 78 S29GL064N, S29GL032N Table 11. Lock Register DQ15-3 DQ2 DQ1 DQ0 Don’t Care Password Protection Mode Lock Bit Persistent Protection Mode Lock Bit Secured Silicon Sector Protection Bit 8.11 Persistent Sector Protection The Persistent Sector Protection method replaces the old 12 V controlled protection method while at the same time enhancing flexibility by providing three different sector protection states. Dynamically Locked The sector is protected and can be changed by a simple command Persistently Locked A sector is protected and cannot be changed Unlocked The sector is unprotected and can be changed by a simple command To achieve these states, three types of “bits” are used: 8.11.1 Dynamic Protection Bit (DYB) A volatile protection bit is assigned for each sector. After power-up or hardware reset, the contents of all DYB bits are in the “unprotected state”. Each DYB is individually modifiable through the DYB Set Command and DYB Clear Command. The DYB bits and Persistent Protect Bits (PPB) Lock bit are defaulted to power up in the cleared state or unprotected state - meaning the all PPB bits are changeable. The Protection State for each sector is determined by the logical OR of the PPB and the DYB related to that sector. For the sectors that have the PPB bits cleared, the DYB bits control whether or not the sector is protected or unprotected. By issuing the DYB Set and DYB Clear command sequences, the DYB bits is protected or unprotected, thus placing each sector in the protected or unprotected state. These are the so-called Dynamic Locked or Unlocked states. They are called dynamic states because it is very easy to switch back and forth between the protected and un-protected conditions. This allows software to easily protect sectors against inadvertent changes yet does not prevent the easy removal of protection when changes are needed. The DYB bits maybe set or cleared as often as needed. The PPB bits allow for a more static, and difficult to change, level of protection. The PPB bits retain their state across power cycles because they are Non-Volatile. Individual PPB bits are set with a program command but must all be cleared as a group through an erase command. The PPB Lock Bit adds an additional level of protection. Once all PPB bits are programmed to the desired settings, the PPB Lock Bit may be set to the “freeze state”. Setting the PPB Lock Bit to the “freeze state” disables all program and erase commands to the Non-Volatile PPB bits. In effect, the PPB Lock Bit locks the PPB bits into their current state. The only way to clear the PPB Lock Bit to the “unfreeze state” is to go through a power cycle, or hardware reset. The Software Reset command does not clear the PPB Lock Bit to the “unfreeze state”. System boot code can determine if any changes to the PPB bits are needed e.g. to allow new system code to be downloaded. If no changes are needed then the boot code can set the PPB Lock Bit to disable any further changes to the PPB bits during system operation. The WP# write protect pin adds a final level of hardware protection. When this pin is low it is not possible to change the contents of the WP# protected sectors. These sectors generally hold system boot code. So, the WP# pin can prevent any changes to the boot code that could override the choices made while setting up sector protection during system initialization. It is possible to have sectors that have been persistently locked, and sectors that are left in the dynamic state. The sectors in the dynamic state are all unprotected. If there is a need to protect some of them, a simple DYB Set command sequence is all that is necessary. The DYB Set and DYB Clear commands for the dynamic sectors switch the DYB bits to signify protected and unprotected, respectively. If there is a need to change the status of the persistently locked sectors, a few more steps are required. First, the PPB Lock Bit must be disabled to the “unfreeze state” by either putting the device through a power-cycle, or hardware reset. The PPB bits can then be changed to reflect the desired settings. Setting the PPB Lock Bit once again to the “freeze state” locks the PPB bits, and the device operates normally again. To achieve the best protection, execute the PPB Lock Bit Set command early in the boot code, and protect the boot code by holding WP# = VIL. Document Number: 001-98525 Rev. *B Page 31 of 78 S29GL064N, S29GL032N 8.11.2 Persistent Protection Bit (PPB) A single Persistent (non-volatile) Protection Bit is assigned to each sector. If a PPB is programmed to the protected state through the “PPB Program” command, that sector is protected from program or erase operations and is therefor read-only. If a PPB requires erasure, all of the sector PPB bits must first be erased in parallel through the “All PPB Erase” command. The “All PPB Erase” command preprograms all PPB bits prior to PPB erasing. All PPB bits erase in parallel, unlike programming where individual PPB bits are programmable. The PPB bits are limited to the same number of cycles as a flash memory sector. Programming the PPB bit requires the typical word programming time without utilizing the Write Buffer. During a PPB bit programming and all PPB bit erasing sequence executions, the DQ6 Toggle Bit I toggles until the programming of the PPB bit or erasing of all PPB bits has completed to indicate programming and erasing status. Erasing all of the PPB bits at once requires typical sector erase time. During the erasing of all PPB bits, the DQ3 Sector Erase Timer bit outputs a 1 to indicate the erasure of all PPB bits are in progress. When the erasure of all PPB bits has completed, the DQ3 Sector Erase Timer bit outputs a 0 to indicate that all PPB bits have been erased. Reading the PPB Status bit requires the initial access time of the device. 8.11.3 Persistent Protection Bit Lock (PPB Lock Bit) A global volatile bit. When set to the “freeze state”, the PPB bits cannot be changed. When cleared to the “unfreeze state”, the PPB bits are changeable. There is only one PPB Lock Bit per device. The PPB Lock Bit is cleared to the “unfreeze state” at power-up or hardware reset. There is no command sequence to unlock or “unfreeze” the PPB Lock Bit. Configuring the PPB Lock Bit to the freeze state requires approximately 100ns. Reading the PPB Lock Status bit requires the initial access time (tACC) of the device. Table 12. Sector Protection Schemes Protection States DYB Bit PPB Bit PPB Lock Bit Unprotect Unprotect Unfreeze Unprotect Unprotect Freeze Unprotect Protect Unfreeze Unprotect Protect Freeze Protect Unprotect Unfreeze Protect Unprotect Freeze Protect Protect Unfreeze Protect Protect Freeze Sector State Unprotected – PPB and DYB are changeable Unprotected – PPB not changeable, DYB is changeable Protected – PPB and DYB are changeable Protected – PPB not changeable, DYB is changeable Protected – PPB and DYB are changeable Protected – PPB not changeable, DYB is changeable Protected – PPB and DYB are changeable Protected – PPB not changeable, DYB is changeable Table 12 contains all possible combinations of the DYB bit, PPB bit, and PPB Lock Bit relating to the status of the sector. In summary, if the PPB bit is set, and the PPB Lock Bit is set, the sector is protected and the protection cannot be removed until the next power cycle or hardware reset clears the PPB Lock Bit to “unfreeze state”. If the PPB bit is cleared, the sector can be dynamically locked or unlocked. The DYB bit then controls whether or not the sector is protected or unprotected. If the user attempts to program or erase a protected sector, the device ignores the command and returns to read mode. A program command to a protected sector enables status polling for approximately 1 µs before the device returns to read mode without having modified the contents of the protected sector. An erase command to a protected sector enables status polling for approximately 50 µs after which the device returns to read mode without having erased the protected sector. The programming of the DYB bit, PPB bit, and PPB Lock Bit for a given sector can be verified by writing a DYB Status Read, PPB Status Read, and PPB Lock Status Read commands to the device. The Autoselect Sector Protection Verification outputs the OR function of the DYB bit and PPB bit per sector basis. When the OR function of the DYB bit and PPB bit is a 1, the sector is either protected by DYB or PPB or both. When the OR function of the DYB bit and PPB bit is a 0, the sector is unprotected through both the DYB and PPB. Document Number: 001-98525 Rev. *B Page 32 of 78 S29GL064N, S29GL032N 8.12 Password Sector Protection The Password Sector Protection method allows an even higher level of security than the Persistent Sector Protection method. There are two main differences between the Persistent Sector Protection and the Password Sector Protection methods:  When the device is first powered on, or comes out of a reset cycle, the PPB Lock Bit is set to the locked state, or the freeze state, rather than cleared to the unlocked state, or the unfreeze state.  The only means to clear and unfreeze the PPB Lock Bit is by writing a unique 64-bit Password to the device. The Password Sector Protection method is otherwise identical to the Persistent Sector Protection method. A 64-bit password is the only additional tool utilized in this method. The password is stored in a one-time programmable (OTP) region outside of the flash memory. Once the Password Protection Mode Lock Bit is set, the password is permanently set with no means to read, program, or erase it. The password is used to clear and unfreeze the PPB Lock Bit. The Password Unlock command must be written to the flash, along with a password. The flash device internally compares the given password with the pre-programmed password. If they match, the PPB Lock Bit is cleared to the unfreezed state, and the PPB bits can be altered. If they do not match, the flash device does nothing. There is a built-in 2 µs delay for each password check after the valid 64-bit password is entered for the PPB Lock Bit to be cleared to the “unfreezed state”. This delay is intended to thwart any efforts to run a program that tries all possible combinations in order to crack the password. 8.13 Password and Password Protection Mode Lock Bit In order to select the Password Sector Protection method, the user must first program the password. Cypress recommends that the password be somehow correlated to the unique Electronic Serial Number (ESN) of the particular flash device. Each ESN is different for every flash device; therefore each password should be different for every flash device. While programming in the password region, the customer may perform Password Read operations. Once the desired password is programmed in, the customer must then set the Password Protection Mode Lock Bit. This operation achieves two objectives: 1. It permanently sets the device to operate using the Password Protection Mode. It is not possible to reverse this function. 2. It also disables all further commands to the password region. All program, and read operations are ignored. Both of these objectives are important, and if not carefully considered, may lead to unrecoverable errors. The user must be sure that the Password Sector Protection method is desired when programming the Password Protection Mode Lock Bit. More importantly, the user must be sure that the password is correct when the Password Protection Mode Lock Bit is programmed. Due to the fact that read operations are disabled, there is no means to read what the password is afterwards. If the password is lost after programming the Password Protection Mode Lock Bit, there is no way to clear and unfreeze the PPB Lock Bit. The Password Protection Mode Lock Bit, once programmed, prevents reading the 64-bit password on the DQ bus and further password programming. The Password Protection Mode Lock Bit is not erasable. Once Password Protection Mode Lock Bit is programmed, the Persistent Protection Mode Lock Bit is disabled from programming, guaranteeing that no changes to the protection scheme are allowed. 8.13.1 64-bit Password The 64-bit Password is located in its own memory space and is accessible through the use of the Password Program and Password Read commands. The password function works in conjunction with the Password Protection Mode Lock Bit, which when programmed, prevents the Password Read command from reading the contents of the password on the pins of the device. 8.14 Persistent Protection Bit Lock (PPB Lock Bit) A global volatile bit. The PPB Lock Bit is a volatile bit that reflects the state of the Password Protection Mode Lock Bit after power-up reset. If the Password Protection Mode Lock Bit is also programmed after programming the Password, the Password Unlock command must be issued to clear and unfreeze the PPB Lock Bit after a hardware reset (RESET# asserted) or a power-up reset. Successful execution of the Password Unlock command clears and unfreezes the PPB Lock Bit, allowing for sector PPB bits to be modified. Without issuing the Password Unlock command, while asserting RESET#, taking the device through a power-on reset, or issuing the PPB Lock Bit Set command sets the PPB Lock Bit to a the “freeze state”. If the Password Protection Mode Lock Bit is not programmed, the device defaults to Persistent Protection Mode. In the Persistent Protection Mode, the PPB Lock Bit is cleared to the unfreeze state after power-up or hardware reset. The PPB Lock Bit is set to the freeze state by issuing the PPB Lock Bit Set command. Once set to the freeze state the only means for clearing the PPB Lock Bit to the “unfreeze state” is by issuing a hardware or power-up reset. The Password Unlock command is ignored in Persistent Protection Mode. Reading the PPB Lock Bit requires a 200 ns access time. Document Number: 001-98525 Rev. *B Page 33 of 78 S29GL064N, S29GL032N 8.15 Secured Silicon Sector Flash Memory Region The Secured Silicon Sector feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The Secured Silicon Sector is 256 bytes in length, and uses a Secured Silicon Sector Indicator Bit (DQ7) to indicate whether or not the Secured Silicon Sector is locked when shipped from the factory. This bit is permanently set at the factory and cannot be changed, which prevents cloning of a factory locked part. This ensures the security of the ESN once the product is shipped to the field. The factory offers the device with the Secured Silicon Sector either customer lockable (standard shipping option) or factory locked (contact an AMD sales representative for ordering information). The customer-lockable version is shipped with the Secured Silicon Sector unprotected, allowing customers to program the sector after receiving the device. The customer-lockable version also has the Secured Silicon Sector Indicator Bit permanently set to a 0. The factory-locked version is always protected when shipped from the factory, and has the Secured Silicon Sector Indicator Bit permanently set to a 1. Thus, the Secured Silicon Sector Indicator Bit prevents customer-lockable devices from being used to replace devices that are factory locked. The Secured Silicon sector address space in this device is allocated as follows: Secured Silicon Sector Address Range 000000h–000007h Customer Lockable Determined by customer 000008h–00007Fh ESN Factory Locked ExpressFlash Factory Locked ESN ESN or determined by customer Unavailable Determined by customer The system accesses the Secured Silicon Sector through a command sequence (see Write Protect (WP#/ACC) on page 35). After the system has written the Enter Secured Silicon Sector command sequence, it may read the Secured Silicon Sector by using the addresses normally occupied by the first sector (SA0). This mode of operation continues until the system issues the Exit Secured Silicon Sector command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands to sector SA0. 8.15.1 Customer Lockable: Secured Silicon Sector NOT Programmed or Protected At the Factory Unless otherwise specified, the device is shipped such that the customer may program and protect the 256-byte Secured Silicon sector. The system may program the Secured Silicon Sector using the write-buffer, accelerated and/or unlock bypass methods, in addition to the standard programming command sequence. See Command Definitions on page 39. Programming and protecting the Secured Silicon Sector must be used with caution since, once protected, there is no procedure available for unprotecting the Secured Silicon Sector area and none of the bits in the Secured Silicon Sector memory space can be modified in any way. The Secured Silicon Sector area can be protected using one of the following procedures:  Write the three-cycle Enter Secured Silicon Sector Region command.  To verify the protect/unprotect status of the Secured Silicon Sector, follow the algorithm. Once the Secured Silicon Sector is programmed, locked and verified, the system must write the Exit Secured Silicon Sector Region command sequence to return to reading and writing within the remainder of the array. 8.15.2 Factory Locked: Secured Silicon Sector Programmed and Protected At the Factory In devices with an ESN, the Secured Silicon Sector is protected when the device is shipped from the factory. The Secured Silicon Sector cannot be modified in any way. An ESN Factory Locked device has an 16-byte random ESN at addresses 000000h–000007h. Please contact your sales representative for details on ordering ESN Factory Locked devices. Customers may opt to have their code programmed by the factory through the ExpressFlash service (Express Flash Factory Locked). The devices are then shipped from the factory with the Secured Silicon Sector permanently locked. Contact your sales representative for details on using the ExpressFlash service. Document Number: 001-98525 Rev. *B Page 34 of 78 S29GL064N, S29GL032N 8.16 Write Protect (WP#/ACC) The Write Protect function provides a hardware method of protecting the first or last sector without using VID. Write Protect is one of two functions provided by the WP#/ACC input. If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the first or last sector independently of whether those sectors were protected or unprotected. Note that if WP#/ACC is at VIL when the device is in the standby mode, the maximum input load current is increased. See the table in DC Characteristics on page 58. If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the first or last sector was previously set to be protected or unprotected using the method described in Advanced Sector Protection on page 30. Note that WP#/ACC contains an internal pull-up; when unconnected, WP#/ACC is at VIH. 8.17 Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 17 on page 47 and Table 19 on page 50 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. 8.17.1 Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. 8.17.2 Write Pulse Glitch Protection Noise pulses of less than 3 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. 8.17.3 Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. 8.17.4 Power-Up Write Inhibit If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. Document Number: 001-98525 Rev. *B Page 35 of 78 S29GL064N, S29GL032N 9. Common Flash Memory Interface (CFI) The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h, any time the device is ready to read array data. The system can read CFI information at the addresses given in Table 13 on page 36 – Table 16 on page 38. To terminate reading CFI data, the system must write the reset command. The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Table 13 on page 36 – Table 16 on page 38. The system must write the reset command to return the device to reading array data. For further information, please refer to the CFI Specification and CFI Publication 100. Alternatively, contact your sales representative for copies of these documents. Table 13. CFI Query Identification String Addresses (x16) Addresses (x8) Data Description 10h 11h 12h 20h 22h 24h 0051h 0052h 0059h Query Unique ASCII string “QRY” 13h 14h 26h 28h 0002h 0000h Primary OEM Command Set 15h 16h 2Ah 2Ch 0040h 0000h Address for Primary Extended Table 17h 18h 2Eh 30h 0000h 0000h Alternate OEM Command Set (00h = none exists) 19h 1Ah 32h 34h 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) Table 14. System Interface String Addresses (x16) Addresses (x8) Data Description 1Bh 36h 0027h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 38h 0036h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 3Ah 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 3Ch 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 3Eh 0007h Reserved for future use 20h 40h 0007h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 42h 000Ah Typical timeout per individual block erase 2N ms 22h 44h 0000h Typical timeout for full chip erase 2N ms (00h = not supported) 23h 46h 0003h Max. timeout for byte/word program 2N times typical. 24h 48h 0005h Max. timeout for buffer write 2N times typical 25h 4Ah 0004h Max. timeout per individual block erase 2N times typical 26h 4Ch 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) Note CFI data related to VCC and time-outs may differ from actual VCC and time-outs of the product. Please consult the Ordering Information tables to obtain the VCC range for particular part numbers. Please consult the Erase and Programming Performance table for typical timeout specifications. Document Number: 001-98525 Rev. *B Page 36 of 78 S29GL064N, S29GL032N Table 15. Device Geometry Definition Addresses (x16) Addresses (x8) Data Description 27h 4Eh 00xxh Device Size = 2N byte 0017h = 64 Mb, 0016h = 32 Mb 28h 29h 50h 52h 000xh 0000h Flash Device Interface description (refer to CFI publication 100) 0001h = x16-only bus devices 0002h = x8/x16 bus devices 2Ah 2Bh 54h 56h 0005h 0000h Max. number of byte in multi-byte write = 2N (00h = not supported) 2Ch 58h 00xxh Number of Erase Block Regions within device (01h = uniform device, 02h = boot device) 2Dh 2Eh 2Fh 30h 5Ah 5Ch 5Eh 60h 00xxh 000xh 00x0h 000xh Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 007Fh, 0000h, 0000h, 0001h = 64 Mb (01, 02, 06, 07, V1, V2, V6, V7) 0007h, 0000h, 0020h, 0000h = 64 Mb (03, 04) 003Fh, 0000h, 0000h, 0001h = 32 Mb (01, 02, V1, V2) 0007h, 0000h, 0020h, 0000h = 32 Mb (03, 04) 31h 32h 33h 34h 60h 64h 66h 68h 00xxh 0000h 0000h 000xh Erase Block Region 2 Information (refer to CFI publication 100) 0000h, 0000h, 0000h, 0000h = 64 Mb (01, 02, 06, 07, V1, V2, V6, V7) 007Eh, 0000h, 0000h, 0001h = 64 Mb (03, 04) 0000h, 0000h, 0000h, 0000h = 32 Mb (01, 02, V1, V2) 003Eh, 0000h, 0000h, 0001h = 32 Mb (03, 04) 35h 36h 37h 38h 6Ah 6Ch 6Eh 70h 0000h 0000h 0000h 0000h Erase Block Region 3 Information (refer to CFI publication 100) 39h 3Ah 3Bh 3Ch 72h 74h 76h 78h 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to CFI publication 100) Document Number: 001-98525 Rev. *B Page 37 of 78 S29GL064N, S29GL032N Table 16. Primary Vendor-Specific Extended Query Addresses (x16) Addresses (x8) Data 40h 41h 42h 80h 82h 84h 0050h 0052h 0049h Description Query-unique ASCII string “PRI” 43h 86h 0031h Major version number, ASCII 44h 88h 0033h Minor version number, ASCII 45h 8Ah 00xxh Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Process Technology (Bits 7-2) 0100b = 110 nm MirrorBit 0011h = x8-only bus devices 0010h = all other devices 46h 8Ch 0002h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 47h 8Eh 0001h Sector Protect 0 = Not Supported, X = Number of sectors in smallest sector 48h 90h 0000h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 92h 0008h Sector Protect/Unprotect scheme 0008h = Advanced sector Protection 4Ah 94h 0000h Simultaneous Operation 00 = Not Supported, X = Number of Sectors in Bank 4Bh 96h 0000h Burst Mode Type 00 = Not Supported, 01 = Supported 4Ch 98h 0002h Page Mode Type 02 = 8 Word Page 4Dh 9Ah 00B5h ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV 4Eh 9Ch 00C5h ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV 4Fh 9Eh 00xxh Top/Bottom Boot Sector Flag 02h = Bottom Boot Device, 03h = Top Boot Device, 04h = Uniform sectors bottom WP# protect, 05h = Uniform sectors top WP# protect 50h A0h 0001h Program Suspend 00h = Not Supported, 01h = Supported Document Number: 001-98525 Rev. *B Page 38 of 78 S29GL064N, S29GL032N 10. Command Definitions Writing specific address and data commands or sequences into the command register initiates device operations. Table 17 on page 47 and Table 19 on page 50 define the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A reset command is then required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to the AC Characteristics section for timing diagrams. 10.1 Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. The device is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the device enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See Erase Suspend/Erase Resume Commands on page 46 for more information. The system must issue the reset command to return the device to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the device is in the autoselect mode. See the next section, Reset Command, for more information. See also Requirements for Reading Array Data in the Device Bus Operations section for more information. The Read-Only Operations–AC Characteristics on page 61 provide the read parameters, and Figure 21 on page 62 shows the timing diagram. 10.2 Reset Command Writing the reset command resets the device to the read or erase-suspend-read mode. Address bits are don’t cares for this command. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the device to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to the read mode. If the program command sequence is written while the device is in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If the device entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns the device to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend). Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write the Write-to-Buffer-Abort Reset command sequence to reset the device for the next operation. 10.3 Autoselect Command Sequence The autoselect command sequence allows the host system to read several identifier codes at specific addresses. Identifier Code A7:A0 (x16) A6:A-1 (x8) Manufacturer ID 00h 00h Device ID, Cycle 1 01h 02h Device ID, Cycle 2 0Eh 1Ch Device ID, Cycle 3 0Fh 1Eh Secured Silicon Sector Factory Protect 03h 06h Sector Protect Verify (SA)02h (SA)04h Note The device ID is read over three cycles. SA = Sector Address Document Number: 001-98525 Rev. *B Page 39 of 78 S29GL064N, S29GL032N The autoselect command sequence is initiated by first writing on unlock cycle (two cycles). This is followed by a third write cycle that contains the autoselect command. The device then enters the autoselect mode. The system may read at any address any number of times without initiating another autoselect command sequence: The system must write the reset command to return to the read mode (or erase-suspend-read mode if the device was previously in Erase Suspend). 10.4 Enter/Exit Secured Silicon Sector Command Sequence The Secured Silicon Sector region provides a secured data area containing an 8-word/16-byte random Electronic Serial Number (ESN). The system can access the Secured Silicon Sector region by issuing the three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence. The Exit Secured Silicon Sector command sequence returns the device to normal operation. Table 17 on page 47 and Table 19 on page 50 show the address and data requirements for both command sequences. See also Secured Silicon Sector Flash Memory Region on page 34 for further information. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is enabled. 10.4.1 Word Program Command Sequence Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 17 on page 47 and Table 19 on page 50 show the address and data requirements for the word program command sequence, respectively. When the Embedded Program algorithm is complete, the device then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7 or DQ6. Refer to the Write Operation Status section for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in progress. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once the device returns to the read mode, to ensure data integrity. Programming is allowed in any sequence of address locations and across sector boundaries. Programming to the same word address multiple times without intervening erases (incremental bit programming) requires a modified programming method. For such application requirements, please contact your local Cypress representative. Word programming is supported for backward compatibility with existing Flash driver software and for occasional writing of individual words. Use of write buffer programming (see below) is strongly recommended for general programming use when more than a few words are to be programmed. The effective word programming time using write buffer programming is approximately four times shorter than the single word programming time. Any bit in a word cannot be programmed from 0 back to a 1. Attempting to do so may cause the device to set DQ5=1, or cause DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read shows that the data is still 0. Only erase operations can convert a 0 to a 1. 10.4.2 Unlock Bypass Command Sequence The unlock bypass feature allows the system to program words to the device faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle unlock bypass mode command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 17 on page 47 and Table 19 on page 50 show the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data 90h. The second cycle must contain the data 00h. The device then returns to the read mode. Document Number: 001-98525 Rev. *B Page 40 of 78 S29GL064N, S29GL032N 10.4.3 Write Buffer Programming Write Buffer Programming allows the system write to a maximum of 16 words/32 bytes in one programming operation. This results in faster effective programming time than the standard programming algorithms. The Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load command written at the Sector Address in which programming occurs. The fourth cycle writes the sector address and the number of word locations, minus one, to be programmed. For example, if the system programs six unique address locations, then 05h should be written to the device. This tells the device how many write buffer addresses are loaded with data and therefore when to expect the Program Buffer to Flash command. The number of locations to program cannot exceed the size of the write buffer or the operation aborts. The fifth cycle writes the first address location and data to be programmed. The write-buffer-page is selected by address bits AMAX– A4. All subsequent address/data pairs must fall within the selected-write-buffer-page. The system then writes the remaining address/data pairs into the write buffer. Write buffer locations may be loaded in any order. The write-buffer-page address must be the same for all address/data pairs loaded into the write buffer. (This means Write Buffer Programming cannot be performed across multiple write-buffer pages.) This also means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts to load programming data outside of the selected write-buffer page, the operation aborts. Note that if a Write Buffer address location is loaded multiple times, the address/data pair counter is decremented for every data load operation. The host system must therefore account for loading a write-buffer location more than once. The counter decrements for each data load operation, not for each unique write-buffer-address location. Note also that if an address location is loaded more than once into the buffer, the final data loaded for that address is programmed. Once the specified number of write buffer locations are loaded, the system must then write the Program Buffer to Flash command at the sector address. Any other address and data combination aborts the Write Buffer Programming operation. The device then begins programming. Data polling should be used while monitoring the last address location loaded into the write buffer. DQ7, DQ6, DQ5, and DQ1 should be monitored to determine the device status during Write Buffer Programming. The write-buffer programming operation can be suspended using the standard program suspend/resume commands. Upon successful completion of the Write Buffer Programming operation, the device is ready to execute the next command. The Write Buffer Programming Sequence can be aborted in the following ways:  Load a value that is greater than the page buffer size during the Number of Locations to Program step.  Write to an address in a sector different than the one specified during the Write-Buffer-Load command.  Write an Address/Data pair to a different write-buffer-page than the one selected by the Starting Address during the write buffer data loading stage of the operation.  Write data other than the Confirm Command after the specified number of data load cycles. The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded), DQ6 = toggle, and DQ5= 0. A Write-to-Buffer-Abort Reset command sequence must be written to reset the device for the next operation. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in progress. This flash device is capable of handling multiple write buffer programming operations on the same write buffer address range without intervening erases. For applications requiring incremental bit programming, a modified programming method is required; please contact your local Cypress representative. Any bit in a write buffer address range cannot be programmed from 0 back to a 1. Attempting to do so may cause the device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read shows that the data is still 0. Only erase operations can convert a 0 to a 1. Document Number: 001-98525 Rev. *B Page 41 of 78 S29GL064N, S29GL032N 10.4.4 Accelerated Program The device offers accelerated program operations through the WP#/ACC or ACC pin depending on the particular product. When the system asserts VHH on the WP#/ACC or ACC pin. The device uses the higher voltage on the WP#/ACC or ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH for operations other than accelerated programming, or device damage may result. WP# contains an internal pull-up; when unconnected, WP# is at VIH. Figure 10 on page 42 illustrates the algorithm for the program operation. Refer to the Erase and Program Operations–AC Characteristics on page 61 for parameters, and Figure 22 on page 62 for timing diagrams. Figure 10. Write Buffer Programming Operation Write “Write to Buffer” command and Sector Address Part of “Write to Buffer” Command Sequence Write number of addresses to program minus 1(WC) and Sector Address Write first address/data Yes WC = 0 ? No Abort Write to Buffer Operation? Write to a different sector address Yes Write to buffer ABORTED. Must write “Write-to-buffer Abort Reset” command sequence to return to read mode. No (Note 1) Write next address/data pair WC = WC - 1 Write program buffer to flash sector address Read DQ7 - DQ0 at Last Loaded Address DQ7 = Data? No Yes No No DQ1 = 1? DQ5 = 1? Yes Yes Read DQ7 - DQ0 with address = Last Loaded Address (Note 2) DQ7 = Data? Yes No (Note 3) FAIL or ABORT PASS Notes 1. When Sector Address is specified, any address in the selected sector is acceptable. However, when loading Write-Buffer address locations with data, all addresses must fall within the selected Write-Buffer Page. 2. DQ7 may change simultaneously with DQ5. Therefore, DQ7 should be verified. 3. If this flowchart location was reached because DQ5= 1, then the device FAILED. If this flowchart location was reached because DQ1= 1, then the Write to Buffer operation was ABORTED. In either case, the proper reset command must be written before the device can begin another operation. If DQ1= 1, write the Write-Buffer-Programming-Abort-Reset command. if DQ5= 1, write the Reset command. 4. See Table 17 on page 47 and Table 19 on page 50 for command sequences required for write buffer programming. Document Number: 001-98525 Rev. *B Page 42 of 78 S29GL064N, S29GL032N Figure 11. Program Operation START Write Program Command Sequence Data Poll from System Embedded Program algorithm in progress Verify Data? No Yes Increment Address No Last Address? Yes Programming Completed Note See Table 17 on page 47 and Table 19 on page 50 for program command sequence. 10.5 Program Suspend/Program Resume Command Sequence The Program Suspend command allows the system to interrupt a programming operation or a Write to Buffer programming operation so that data can be read from any non-suspended sector. When the Program Suspend command is written during a programming process, the device halts the program operation within 20 s maximum and updates the status bits. Addresses are not required when writing the Program Suspend command. After the programming operation is suspended, the system can read array data from any non-suspended sector. The Program Suspend command may also be issued during a programming operation while an erase is suspended. In this case, data may be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed from the Secured Silicon Sector area (One-time Program area), then user must use the proper command sequences to enter and exit this region. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program operation is in progress. The system may also write the autoselect command sequence when the device is in the Program Suspend mode. The system can read as many autoselect codes as required. When the device exits the autoselect mode, the device reverts to the Program Suspend mode, and is ready for another valid operation. See Autoselect Command Sequence on page 39 for more information. After the Program Resume command is written, the device reverts to programming. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation. See Write Operation Status on page 52 for more information. The system must write the Program Resume command (address bits are don’t care) to exit the Program Suspend mode and continue the programming operation. Further writes of the Resume command are ignored. Another Program Suspend command can be written after the device resumes programming. Document Number: 001-98525 Rev. *B Page 43 of 78 S29GL064N, S29GL032N Figure 12. Program Suspend/Program Resume Program Operation or Write-to-Buffer Sequence in Progress Write address/data XXXh/B0h Write Program Suspend Command Sequence Command is also valid for Erase-suspended-program operations Wait 20 μs Read data as required No Autoselect and SecSi Sector read operations are also allowed Data cannot be read from erase- or program-suspended sectors Done reading? Yes Write address/data XXXh/30h Write Program Resume Command Sequence Device reverts to operation prior to Program Suspend 10.6 Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 17 on page 47 and Table 19 on page 50 show the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, the device returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, or DQ2. Refer to Write Operation Status on page 52 for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If this occurs, the chip erase command sequence should be reinitiated once the device returns to reading array data, to ensure data integrity. Figure 13 on page 45 illustrates the algorithm for the erase operation. Refer to Table 27 on page 64 for parameters, and Figure 26 on page 66 for timing diagrams. Document Number: 001-98525 Rev. *B Page 44 of 78 S29GL064N, S29GL032N 10.7 Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 17 on page 47 and Table 19 on page 50 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Suspend during the time-out period resets the device to the read mode. Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when an erase operation is in progress. The system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out (See the section on DQ3: Sector Erase Timer.). The time-out begins from the rising edge of the final WE# pulse in the command sequence. When the Embedded Erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. The system can determine the status of the erase operation by reading DQ7, DQ6, or DQ2 in the erasing sector. Refer to the Write Operation Status section for information on these status bits. Once the sector erase operation begins, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once the device returns to reading array data, to ensure data integrity. Figure 13 on page 45 illustrates the algorithm for the erase operation. Refer to Table 27 on page 64 for parameters, and Figure 26 on page 66 for timing diagrams. Figure 13. Erase Operation START Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System Embedded Erase algorithm in progress No Data = FFh? Yes Erasure Completed Notes 1. See Table 17 and Table 19 for program command sequence. 2. See the section on DQ3 for information on the sector erase timer. Document Number: 001-98525 Rev. *B Page 45 of 78 S29GL064N, S29GL032N 10.8 Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. When the Erase Suspend command is written during the sector erase operation, the device requires a typical of 5 smaximum of 20 s) to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation is suspended, the device enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device erase suspends all sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to Write Operation Status on page 52 for information on these status bits. After an erase-suspended program operation is complete, the device returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard word program operation. Refer to Write Operation Status on page 52 for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. Refer to the Autoselect Mode on page 29 and Autoselect Command Sequence on page 39 sections for details. To resume the sector erase operation, the system must write the Erase Resume command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip resumes erasing. During an erase operation, this flash device performs multiple internal operations which are invisible to the system. When an erase operation is suspended, any of the internal operations that were not fully completed must be restarted. As such, if this flash device is continually issued suspend/resume commands in rapid succession, erase progress is impeded as a function of the number of suspends. The result is a longer cumulative erase time than without suspends. Note that the additional suspends do not affect device reliability or future performance. In most systems rapid erase/suspend activity occurs only briefly. In such cases, erase performance is not significantly impacted. Document Number: 001-98525 Rev. *B Page 46 of 78 S29GL064N, S29GL032N 10.9 Command Definitions Command Sequence (Note 1) Cycles Table 17. Command Definitions (x16 Mode, BYTE# = VIH) Bus Cycles (Notes 2–5) First Second Third Fourth Fifth Sixth 1 RA RD Reset (Note 6) 1 XXX F0 Manufacturer ID 4 555 AA 2AA 55 555 90 X00 0001 Device ID (Note 8) 6 555 AA 2AA 55 555 90 X01 227E Device ID 4 555 AA 2AA 55 555 90 X01 (Note 17 ) Secured Silicon Sector Factory Protect 4 555 AA 2AA 55 555 90 X03 (Note 9) Sector Protect Verify (Note 10) 4 555 AA 2AA 55 555 90 (SA)X0 2 00/01 Enter Secured Silicon Sector Region 3 555 AA 2AA 55 555 88 Exit Secured Silicon Sector Region 4 555 AA 2AA 55 555 90 XXX 00 Program 4 555 AA 2AA 55 555 A0 PA PD 2AA 55 SA 25 SA WC PA PD WBL PD Autoselect (Note 7) Read (Note 5) X0E (Note 18) X0F (Note 18) Write to Buffer (Note 11) 3 555 AA Program Buffer to Flash 1 SA 29 Write to Buffer Abort Reset (Note 12) 3 555 AA 2AA 55 555 F0 Unlock Bypass 3 555 AA 2AA 55 555 20 Unlock Bypass Program (Note 13) 2 XXX A0 PA PD Unlock Bypass Reset (Note 14) 2 XXX 90 XXX 00 Chip Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10 Sector Erase 6 555 AA 2AA 55 555 80 555 AA 2AA 55 SA 30 Program/Erase Suspend (Note 15) 1 XXX B0 Program/Erase Resume (Note 16) 1 XXX 30 CFI Query (Note 17) 1 55 98 Document Number: 001-98525 Rev. *B Page 47 of 78 S29GL064N, S29GL032N Legend X = Don’t care RA = Read Address of memory location to be read. RD = Read Data read from location RA during read operation. PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse, whichever happens later. PD = Program Data for location PA. Data latches on rising edge of WE# or CE# pulse, whichever happens first. SA = Sector Address of sector to be verified (in autoselect mode) or erased. Address bits A21–A15 uniquely select any sector. WBL = Write Buffer Location. Address must be within same write buffer page as PA. WC = Word Count. Number of write buffer locations to load minus 1. Notes 1. See Table 2 on page 16 for description of bus operations. 2. All values are in hexadecimal. 3. Shaded cells indicate read cycles. All others are write cycles. 4. During unlock and command cycles, when lower address bits are 555 or 2AA as shown in table, address bits above A11 and data bits above DQ7 are don’t care. 5. No unlock or command cycles required when device is in read mode. 6. Reset command is required to return to read mode (or to erase-suspend-read mode if previously in Erase Suspend) when device is in autoselect mode, or if DQ5 goes high while device is providing status information. 7. Fourth cycle of the autoselect command sequence is a read cycle. Data bits DQ15–DQ8 are don’t care. Except for RD, PD and WC. See Autoselect Command Sequence on page 39 for more information. 8. For S29GL064N and S29GL032N, Device ID must be read in three cycles. 9. Refer to Table 10 on page 29 for data indicating Secured Silicon Sector factory protect status. 10. Data is 00h for an unprotected sector and 01h for a protected sector. 11. Total number of cycles in command sequence is determined by number of words written to write buffer. Maximum number of cycles in command sequence is 21, including Program Buffer to Flash command. 12. Command sequence resets device for next command after aborted write-to-buffer operation. 13. Unlock Bypass command is required prior to Unlock Bypass Program command. 14. Unlock Bypass Reset command is required to return to read mode when device is in unlock bypass mode. 15. System may read and program in non-erasing sectors, or enter autoselect mode, when in Erase Suspend mode. Erase Suspend command is valid only during a sector erase operation. 16. Erase Resume command is valid only during Erase Suspend mode. 17. Command is valid when device is ready to read array data or when device is in autoselect mode. 18. Refer to Table 10 on page 29, for individual Device IDs per device density and model number. Document Number: 001-98525 Rev. *B Page 48 of 78 S29GL064N, S29GL032N Bus Cycles (Notes 2–4) First Second Third Fourth Addr Data Addr Data Addr Data 555 40 555 60 Addr Data Command Set Entry (Note 5) 3 555 AA 2AA 55 Program (Note 6) 2 XX A0 XXX Data Read (Note 6) 1 00 Data Command Set Exit (Note 7) 2 XX 90 XX 00 Command Set Entry (Note 5) 3 555 AA 2AA 55 Program (Note 8) 2 XX A0 Read (Note 9) 4 XXX PWD0 01 PWD1 02 PWD2 03 PWD3 Unlock (Note 10) 7 00 25 00 03 00 PWD0 01 PWD1 Command Set Exit (Note 7) 2 XX 90 XX 00 Command Set Entry (Note 5) 3 555 AA 2AA 55 555 C0 555 50 555 E0 PPB Program (Note 11) 2 XX A0 SA 00 All PPB Erase (Notes 11, 12) 2 XX 80 00 30 PPB Status Read 1 SA RD(0) Command Set Exit (Note 7) 2 XX 90 XX 00 Global Volatile Sector Protection Freeze (PPB Lock) Command Set Entry (Note 5) 3 555 AA 2AA 55 PPB Lock Bit Set 2 XX A0 XX 00 PPB Lock Bit Status Read 1 XXX RD(0) Command Set Exit (Note 7) 2 XX 90 XX 00 Command Set Entry (Note 5) 3 555 AA 2AA 55 DYB Set 2 XX A0 SA 00 SA 01 XX 00 DYB Clear 2 XX A0 DYB Status Read 1 SA RD(0) Command Set Exit (Note 7) 2 XX 90 Fifth Sixth Seventh Addr Data Addr Data Addr Data 02 PWD2 03 PWD3 00 29 PWAx PWDx Volatile Sector Protection (DYB) Non-Volatile Sector Protection (PPB) Password Protection Lock Register Bits Command Sequence (Notes) Cycles Table 18. Sector Protection Commands (x16) Legend X = Don’t care. RA = Address of the memory location to be read. SA = Sector Address. Any address that falls within a specified sector. See Tables 3–9 for sector address ranges. PWA = Password Address. Address bits A1 and A0 are used to select each 16-bit portion of the 64-bit entity. PWD = Password Data. RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0. If unprotected, DQ0 = 1. Notes 1. All values are in hexadecimal. 2. Shaded cells indicate read cycles. 3. Address and data bits not specified in table, legend, or notes are don’t cares (each hex digit implies 4 bits of data). 4. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. The system must write the reset command to return the device to reading array data. 5. Entry commands are required to enter a specific mode to enable instructions only available within that mode. 6. No unlock or command cycles required when bank is reading array data. 7. Exit command must be issued to reset the device into read mode; device may otherwise be placed in an unknown state. 8. Entire two bus-cycle sequence must be entered for each portion of the password. 9. Full address range is required for reading password. 10. Password may be unlocked or read in any order. Unlocking requires the full password (all seven cycles). 11. ACC must be at VIH when setting PPB or DYB. 12. “All PPB Erase” command pre-programs all PPBs before erasure to prevent over-erasure. Document Number: 001-98525 Rev. *B Page 49 of 78 S29GL064N, S29GL032N Command Sequence (Note 1) Cycles Table 19. Command Definitions (x8 Mode, BYTE# = VIL) Bus Cycles (Notes 2–5) First Second Addr Data Read (Note 6) 1 RA RD Reset (Note 7) 1 XXX F0 Addr Data Third Addr Data Fourth Addr Fifth Data Sixth Addr Data Addr Data X1C (Note 17) X1E (Note 17) 4 AAA AA 555 55 AAA 90 X00 01 Device ID (Note 9) 6 AAA AA 555 55 AAA 90 X02 7E Device ID 4 AAA AA 555 55 AAA 90 X02 (Note 10) Secured Silicon Sector Factory Protect 4 AAA AA 555 55 AAA 90 X06 Sector Protect Verify (Note 11) 4 AAA AA 555 55 AAA 90 (SA)X04 Enter Secured Silicon Sector Region 3 AAA AA 555 55 AAA 88 Exit Secured Silicon Sector Region 4 AAA AA 555 55 AAA 90 XXX 00 Program 4 AAA AA 555 55 AAA A0 PA PD Write to Buffer (Note 12) 3 AAA AA 555 55 SA 25 SA BC PA PD WBL PD Program Buffer to Flash 1 SA 29 Autoselect (Note 8) Manufacturer ID 00/01 Write to Buffer Abort Reset (Note 13) 3 AAA AA 555 55 AAA F0 Chip Erase 6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10 Sector Erase 6 AAA AA 555 55 SA 30 AAA AA 555 55 AAA 80 Unlock Bypass AAA AA 555 55 AAA 20 Unlock Bypass Program XXX A0 PA PD Unlock Bypass RESET XXX 90 XXX 00 B0 Program/Erase Suspend (Note 14) 1 XXX Program/Erase Resume (Note 15) 1 XXX 30 CFI Query (Note 16) 1 AA 98 Document Number: 001-98525 Rev. *B Page 50 of 78 S29GL064N, S29GL032N Legend X = Don’t care RA = Read Address of memory location to be read. RD = Read Data read from location RA during read operation. PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse, whichever happens later. PD = Program Data for location PA. Data latches on rising edge of WE# or CE# pulse, whichever happens first. SA = Sector Address of sector to be verified (in autoselect mode) or erased. Address bits A21–A15 uniquely select any sector. WBL = Write Buffer Location. Address must be within same write buffer page as PA. BC = Byte Count. Number of write buffer locations to load minus 1. Notes 1. See Table 2 on page 16 for description of bus operations. 2. All values are in hexadecimal. 3. Shaded cells indicate read cycles. All others are write cycles. 4. During unlock and command cycles, when lower address bits are 555 or AAA as shown in table, address bits above A11 are don’t care. 5. Unless otherwise noted, address bits A21–A11 are don’t cares. 6. No unlock or command cycles required when device is in read mode. 7. Reset command is required to return to read mode (or to erase-suspend-read mode if previously in Erase Suspend) when device is in autoselect mode, or if DQ5 goes high while device is providing status information. 8. Fourth cycle of autoselect command sequence is a read cycle. Data bits DQ15–DQ8 are don’t care. See Autoselect Command Sequence on page 39 for more information. 9. For S29GL064N and S29GL032A Device ID must be read in three cycles. 10. Refer to Table 10 on page 29, for data indicating Secured Silicon Sector factory protect status. 11. Data is 00h for an unprotected sector and 01h for a protected sector. 12. Total number of cycles in command sequence is determined by number of bytes written to write buffer. Maximum number of cycles in command sequence is 37, including Program Buffer to Flash command. 13. Command sequence resets device for next command after aborted write-to-buffer operation. 14. System may read and program in non-erasing sectors, or enter autoselect mode, when in Erase Suspend mode. Erase Suspend command is valid only during a sector erase operation. 15. Erase Resume command is valid only during Erase Suspend mode. 16. Command is valid when device is ready to read array data or when device is in autoselect mode. 17. Refer to Table 10 on page 29, for individual Device IDs per device density and model number. Password Protection Lock Register Bits Command Sequence (Notes) Cycles Table 20. Sector Protection Commands (x8) Bus Cycles (Notes 2–5) 1st/8th 2nd/9th 3rd/10th Addr Data Addr Data Addr Data AA 555 55 AAA 40 XXX Data AAA 60 4th/11th 5th 6th 7th Addr Data Addr Data Addr Data Addr Data Command Set Entry (Note 5) 3 AAA Program (Note 6) 2 XXX A0 Read (Note 6) 1 00 Data Command Set Exit (Note 7) 2 XXX 90 XXX 00 Command Set Entry (Note 5) 3 AAA AA 555 55 Program (Note 8) 2 XXX A0 PWAx PWDx 00 PWD0 01 PWD1 02 PWD2 03 PWD3 04 PWD4 05 PWD5 06 PWD6 07 PWD7 02 PWD2 03 PWD3 04 PWD4 Read (Note 9) Unlock (Note 10) Command Set Exit (Note 7) 8 00 25 00 03 00 PWD0 01 PWD1 05 PWD5 06 PWD6 07 PWD7 00 29 XX 90 XX 00 11 2 Document Number: 001-98525 Rev. *B Page 51 of 78 S29GL064N, S29GL032N Volatile Sector Protection (DYB) Global Volatile Sector Protection Freeze (PPB Lock) Non-Volatile Sector Protection (PPB) Command Sequence (Notes) Cycles Table 20. Sector Protection Commands (x8) (Continued) Bus Cycles (Notes 2–5) 1st/8th 2nd/9th 3rd/10th Addr Data Addr Data Addr Data AAA C0 AAA 50 AAA E0 Command Set Entry (Note 5) 3 AAA AA 555 55 PPB Program (Note 11) 2 XXX A0 SA 00 All PPB Erase (Notes 11, 12) 2 XXX 80 00 30 PPB Status Read 1 SA RD(0) Command Set Exit (Note 7) 2 XXX 90 XXX 00 Command Set Entry (Note 5) 3 AAA AA 555 55 XXX 00 PPB Lock Bit Set 2 XXX A0 PPB Lock Bit Status Read 1 XXX RD(0) Command Set Exit (Note 7) 2 XXX 90 XX 00 Command Set Entry (Note 5) 3 AAA AA 555 55 DYB Set 2 XXX A0 SA 00 DYB Clear 2 XXX A0 SA 01 DYB Status Read 1 SA RD(0) Command Set Exit (Note 7) 2 XXX 90 XXX 00 Legend X = Don’t care. RA = Address of the memory location to be read. SA = Sector Address. Any address that falls within a specified sector. See Tables 3–9 for sector address ranges. 4th/11th Addr Data 5th Addr Data 6th Addr Data 7th Addr Data PWA = Password Address. Address bits A1 and A0 are used to select each 16-bit portion of the 64-bit entity. PWD = Password Data. RD(0) = DQ0 protection indicator bit. If protected, DQ0 = 0. If unprotected, DQ0 = 1. Notes 1. All values are in hexadecimal. 2. Shaded cells indicate read cycles. 3. Address and data bits not specified in table, legend, or notes are don’t cares (each hex digit implies 4 bits of data). 4. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. The system must write the reset command to return the device to reading array data. 5. Entry commands are required to enter a specific mode to enable instructions only available within that mode. 6. No unlock or command cycles required when bank is reading array data. 7. Exit command must be issued to reset the device into read mode; device may otherwise be placed in an unknown state. 8. Entire two bus-cycle sequence must be entered for each portion of the password. 9. Full address range is required for reading password. 10. Password may be unlocked or read in any order. Unlocking requires the full password (all seven cycles). 11. ACC must be at VIH when setting PPB or DYB. 12. “All PPB Erase” command pre-programs all PPBs before erasure to prevent over-erasure. 10.10 Write Operation Status The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 22 on page 56 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/BY#, to determine whether an Embedded Program or Erase operation is in progress or is completed. Document Number: 001-98525 Rev. *B Page 52 of 78 S29GL064N, S29GL032N 10.11 DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether the device is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then the device returns to the read mode. During the Embedded Erase algorithm, Data# Polling produces a 0 on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data# Polling produces a 1 on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the device returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device completed the program or erase operation and DQ7 has valid data, the data outputs on DQ0–DQ6 may be still invalid. Valid data on DQ0–DQ7 appears on successive read cycles. Table 22 on page 56 shows the outputs for Data# Polling on DQ7. Figure 14 on page 53 shows the Data# Polling algorithm. Figure 27 on page 66 shows the Data# Polling timing diagram. Figure 14. Data# Polling Algorithm START Read DQ15–DQ0 Addr = VA DQ7 = Data? Yes No No DQ5 = 1? Yes Read DQ15–DQ0 Addr = VA DQ7 = Data? Yes No FAIL PASS Notes 1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = 1 because DQ7 may change simultaneously with DQ5. Document Number: 001-98525 Rev. *B Page 53 of 78 S29GL064N, S29GL032N 10.12 RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in the erase-suspend-read mode. Table 22 on page 56 shows the outputs for RY/BY#. 10.13 DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see DQ7: Data# Polling on page 53). If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Table 22 on page 56 shows the outputs for Toggle Bit I on DQ6. Figure 15 on page 54 shows the toggle bit algorithm. Figure 28 on page 67 shows the toggle bit timing diagrams. Figure 29 on page 67 shows the differences between DQ2 and DQ6 in graphical form. See also the subsection on DQ2: Toggle Bit II on page 55. Figure 15. Toggle Bit Algorithm START Read DQ7–DQ0 Read DQ7–DQ0 Toggle Bit = Toggle? No Yes No DQ5 = 1? Yes Read DQ7–DQ0 Twice Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command Program/Erase Operation Complete Note The system should recheck the toggle bit even if DQ5 = 1 because the toggle bit may stop toggling as DQ5 changes to 1. See the subsections on DQ6 and DQ2 for more information. Document Number: 001-98525 Rev. *B Page 54 of 78 S29GL064N, S29GL032N 10.14 DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that were selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 22 on page 56 to compare outputs for DQ2 and DQ6. Figure 15 on page 54 shows the toggle bit algorithm in flowchart form. Figure 28 on page 67 shows the toggle bit timing diagram. Figure 29 on page 67 shows the differences between DQ2 and DQ6 in graphical form. 10.15 Reading Toggle Bits DQ6/DQ2 Refer to Figure 15 on page 54 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device completed the program or erase operation. The system can read array data on DQ7– DQ0 on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 15 on page 54). 10.16 DQ5: Exceeded Timing Limits DQ5 indicates whether the program, erase, or write-to-buffer time exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a 1. indicating that the program or erase cycle was not successfully completed. The device may output a 1 on DQ5 if the system tries to program a 1 to a location that was previously programmed to 0. Only an erase operation can change a 0 back to a 1. Under this condition, the device halts the operation, and when the timing limit is exceeded, DQ5 produces a 1. In all these cases, the system must write the reset command to return the device to the reading the array (or to erase-suspend-read if the device was previously in the erase-suspend-program mode). 10.17 DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure began. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a 0 to a 1. If the time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also the Sector Erase Command Sequence section. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device accepted the command sequence, and then read DQ3. If DQ3 is 1, the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is 0, the device accepts additional sector erase commands. To ensure the command is accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 22 on page 56 shows the status of DQ3 relative to the other status bits. Document Number: 001-98525 Rev. *B Page 55 of 78 S29GL064N, S29GL032N 10.18 DQ1: Write-to-Buffer Abort DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these conditions DQ1 produces a 1. The system must issue the Write-to-Buffer-Abort-Reset command sequence to return the device to reading array data. See Write Buffer on page 17 for more details. Table 21. Write Operation Status Status Standard Mode DQ7 (Note 2) DQ6 DQ7# Toggle 0 N/A No toggle 0 0 0 Toggle 0 1 Toggle N/A 0 Embedded Program Algorithm Embedded Erase Algorithm Program-Suspend Program- ed Sector Program Suspend Suspend Mode Non-Program Read Suspended Sector Erase Suspend Mode Write-to-Buffer Erase-Suspended EraseSector Suspend Non-Erase Read Suspended Sector 1 DQ5 (Note 1) DQ3 DQ2 (Note 2) DQ1 RY/BY# Invalid (not allowed) 1 Data 1 No toggle 0 N/A Toggle N/A 1 Data 1 Erase-Suspend-Program (Embedded Program) DQ7# Toggle 0 N/A N/A N/A 0 Busy (Note 3) DQ7# Toggle 0 N/A N/A 0 0 Abort (Note 4) DQ7# Toggle 0 N/A N/A 1 0 Table 22. Write Operation Status Status Standard Mode Program Suspend Mode Erase Suspend Mode Write-toBuffer Embedded Program Algorithm Embedded Erase Algorithm DQ7 (Note 2) DQ6 DQ7# Toggle 0 N/A No toggle 0 0 0 Toggle 0 1 Toggle N/A 0 Program-Suspended Program- Sector Suspend Non-Program Read Suspended Sector Erase-Suspended EraseSector Suspend Non-Erase Suspended Read Sector 1 DQ5 DQ2 DQ3 DQ1 (Note 1) (Note 2) RY/BY# Invalid (not allowed) 1 Data 1 No toggle 0 N/A Toggle N/A Data 1 1 Erase-Suspend-Program (Embedded Program) DQ7# Toggle 0 N/A N/A N/A 0 Busy (Note 3) DQ7# Toggle 0 N/A N/A 0 0 Abort (Note 4) DQ7# Toggle 0 N/A N/A 1 0 Notes 1. DQ5 switches to 1 when an Embedded Program, Embedded Erase, or Write-to-Buffer operation exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location. 4. DQ1 switches to 1 when the device aborts the write-to-buffer operation. Document Number: 001-98525 Rev. *B Page 56 of 78 S29GL064N, S29GL032N 11. Absolute Maximum Ratings Parameter Rating Storage Temperature, Plastic Packages –65°C to +150°C Ambient Temperature with Power Applied –65°C to +125°C Voltage with Respect to Ground Output Short Circuit Current VCC (Note 1) –0.5 V to +4.0 V A9, ACC and RESET# (Note 2) –0.5 V to +12.5 V All other pins (Note 1) –0.5 V to VCC+0.5 V (Note 3) 200 mA Notes 1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 16. Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure 17. 2. Minimum DC input voltage on pins A9, ACC, and RESET# is –0.5 V. During voltage transitions, A9, ACC, and RESET# may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 16. Maximum DC input voltage on pin A9, ACC, and RESET# is +12.5 V which may overshoot to +14.0 V for periods up to 20 ns. 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 4. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. Figure 16. Maximum Negative Overshoot Waveform 20 ns 20 ns +0.8 V –0.5 V –2.0 V 20 ns Figure 17. Maximum Positive Overshoot Waveform 20 ns VCC +2.0 V VCC +0.5 V 2.0 V 20 ns Document Number: 001-98525 Rev. *B 20 ns Page 57 of 78 S29GL064N, S29GL032N 12. Operating Ranges Parameter Range Ambient Temperature (TA), Industrial (I) Devices Supply Voltages –40°C to +85°C VCC for full voltage range +2.7 V to +3.6 V VIO +1.65 to +3.6 V Notes 1. Operating ranges define those limits between which the functionality of the device is guaranteed. 2. VIO input voltage always must be lower than VCC input voltage. 13. DC Characteristics Table 23. DC Characteristics, CMOS Compatible Parameter Symbol Parameter Description (Notes) Test Conditions Min Typ Max WP#/ACC: ±2.0 µA VIN = VSS to VCC, VCC = VCC max ILI Input Load Current (Note 1) ILIT A9 Input Load Current VCC = VCC max; A9 = 12.5 V ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC max Others: ±1.0 µA Unit µA 35 µA ±1.0 µA CE# = VIL, OE# = VIH, VCC = VCC max, f = 1 MH 6 10 CE# = VIL, OE# = VIH, VCC = VCC max, f = 5 MHz 25 30 CE# = VIL, OE# = VIH, VCC = VCC max, f = 10 MHz 45 50 CE# = VIL, OE# = VIH, VCC = VCC max f = 10 MHz 1 10 CE# = VIL, OE# = VIH, VCC = VCC max f = 33 MH 5 20 ICC3 VCC Active Erase/Program Current CE# = VIL, OE# = VIH, VCC = VCC max (Notes 2, 3) 50 60 mA ICC4 VCC Standby Current VCC = VCC max; VIO = VCC; OE# = VIH; VIL = (VSS+0.3V) / –0.1V; CE#, RESET# = VCC 0.3 V 1 5 µA ICC5 VCC Reset Current VCC = VCCmax, VIO = VCC, VIL = (VSS+0.3V) / –0.1V; RESET# = VSS 0.3 V 1 5 µA ICC6 Automatic Sleep Mode (Note 4) VCC = VCCmax, VIO = VCC, VIH = VCC  0.3 V; VIL = (VSS+0.3V) / –0.1V; WP#/ACC = VIH 1 5 µA IACC CE# = VIL, OE# = VIH, ACC Accelerated Program Current VCC = VCCmax, WP#/ACC = VIH 10 20 mA ICC1 ICC2 VCC Initial Read Current (Note 1) VCC Intra-Page Read Current (Note 1) mA mA WP#/AC C 60 mA VIL Input Low Voltage 1 (Note 5) –0.1 0.3 x VIO V VIH Input High Voltage 1 (Note 5) 0.7 VIO VIO + 0.3 V VHH Voltage for ACC Program Acceleration VCC = 2.7 –3.6 V 11.5 12.5 V VID Voltage for Autoselect VCC = 2.7 –3.6 V 11.5 12.5 V Document Number: 001-98525 Rev. *B VCC 50 Page 58 of 78 S29GL064N, S29GL032N Table 23. DC Characteristics, CMOS Compatible (Continued) Parameter Symbol VOL VOH1 VOH2 VLKO Parameter Description (Notes) Test Conditions Output Low Voltage (Note 5) IOL = 100 µA Output High Voltage (Note 5) IOH = –100 µA Low VCC Lock-Out Voltage (Note 3) Min Typ Max Unit 0.15 x VIO V 0.85 VIO 2.3 V 2.5 V Notes 1. ICC current listed is typically less than 5.5 mA/MHz, with OE# at VIH. 2. ICC active while Embedded Erase, Embedded Program, or Write Buffer Programming is in progress. 3. Not 100% tested. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. 5. VIO = 1.65–1.95 V or 2.7–3.6 V. 6. VCC = 3 V and VIO = 3 V or 1.8 V. When VIO is at 1.8 V, I/Os cannot operate at 3 V. Document Number: 001-98525 Rev. *B Page 59 of 78 S29GL064N, S29GL032N 14. Test Conditions Figure 18. Test Setup 3.3 V 2.7 k Device Under Test CL 6.2 k Note Diodes are IN3064 or equivalent. Table 24. Test Specifications Test Condition All Speeds Output Load Unit 1 TTL gate Output Load Capacitance, CL (including jig capacitance) 30 pF Input Rise and Fall Times 5 ns 0.0 or VIO V Input timing measurement reference levels 0.5 VIO V Output timing measurement reference levels 0.5 VIO V Input Pulse Levels 14.1 Key to Switching Waveforms Waveform Inputs Outputs Steady Changing from H to L Changing from L to H Don’t Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High Z) Figure 19. Input Waveforms and Measurement Levels VCC Input 0.5 VIO Measurement Level 0.5 VIO Output 0.0 V Document Number: 001-98525 Rev. *B Page 60 of 78 S29GL064N, S29GL032N 15. AC Characteristics Table 25. Read-Only Operations Parameter Description JEDEC Std. tAVAV tRC Read Cycle Time (Note 1) tAVQV tACC Address to Output Delay tELQV tCE Chip Enable to Output Delay Speed Options Test Setup 110 Min 90 110 ns CE#, OE# = VIL Max 90 110 ns OE# = VIL Max 90 110 ns 25 25 — 30 25 25 — 30 VIO = VCC = 3 V tPACC Page Access Time Unit 90 VIO = 1.8 V, VCC = 3 V VIO = VCC = 3 V Max Max ns ns tGLQV tOE Output Enable to Output Delay tEHQZ tDF Chip Enable to Output High Z (Note 1) Max 20 ns tGHQZ tDF Output Enable to Output High Z (Note 1) Max 20 ns tAXQX tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Min 0 ns tOEH Output Enable Hold Time (Note 1) Read Min 0 ns Toggle and Data# Polling Min 10 ns VIO = 1.8 V, VCC = 3 V Notes 1. Not 100% tested. 2. See Figure 18 on page 60 and Table 24 on page 60 for test specifications. Figure 20. VCC Power-up Diagram tVCS VCC VCC min VIH RESET# tRH CE# Document Number: 001-98525 Rev. *B Page 61 of 78 S29GL064N, S29GL032N Figure 21. Read Operation Timings tRC Addresses Stable Addresses tACC CE# tRH tRH tDF tOE OE# tOEH WE# tCE tOH HIGH Z HIGH Z Output Valid Outputs RESET# RY/BY# 0V Figure 22. Page Read Timings Same Page A23-A2 A1-A0* Aa tACC Data Bus Ab tPACC Qa Ad Ac tPACC Qb tPACC Qc Qd CE# OE# Note * Figure shows device in word mode. Addresses are A1–A-1 for byte mode. Document Number: 001-98525 Rev. *B Page 62 of 78 S29GL064N, S29GL032N Table 26. Hardware Reset (RESET#) Parameter JEDEC Description Std. All Speed Options Unit tReady RESET# Pin Low (During Embedded Algorithms) to Read Mode (See Note) Max 20 s tReady RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (See Note) Max 500 ns tRP RESET# Pulse Width Min 500 ns tRH Reset High Time Before Read (See Note) Min 50 ns tRPD RESET# Input Low to Standby Mode (See Note) Min 20 µs tRB RY/BY# Output High to CE#, OE# pin Low Min 0 ns Note Not 100% tested. Figure 23. Reset Timings RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# tRH RESET# tRP Notes 1. Not 100% tested. 2. See the Erase And Programming Performance on page 70 for more information. 3. For 1–16 words/1–32 bytes programmed. Document Number: 001-98525 Rev. *B Page 63 of 78 S29GL064N, S29GL032N Table 27. Erase and Program Operations Parameter Speed Options Description Std. tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min 0 ns tASO Address Setup Time to OE# low during toggle bit polling Min 15 ns tAH Address Hold Time Min 45 ns tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min 0 ns tDS Data Setup Time Min 35 ns tDH tWLAX tDVWH tWHDX tGHWL 90 Unit JEDEC 110 90 110 ns Data Hold Time Min 0 ns tCEPH CE# High during toggle bit polling Min 20 ns tOEPH OE# High during toggle bit polling Min 20 ns tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWHEH tCH CE# Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min 35 ns tWHDL tWPH Write Pulse Width High Min 30 ns tWHWH1 tWHWH1 tWHWH2 Write Buffer Program Operation (Notes 2, 3) Typ 240 Single Word Program Operation (Note 2) Typ 60 Accelerated Single Word Program Operation (Note 2) Typ 54 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 tVHH VHH Rise and Fall Time (Note 1) Min 250 ns tVCS VCC Setup Time (Note 1) Min 50 µs tBUSY WE# High to RY/BY# Low Min 90 µs sec 110 ns Notes 1. Not 100% tested. 2. See the Erase And Programming Performance on page 70 for more information. 3. For 1–16 words/1–32 bytes programmed. Document Number: 001-98525 Rev. *B Page 64 of 78 S29GL064N, S29GL032N Figure 24. Program Operation Timings Program Command Sequence (last two cycles) tAS tWC 555h Addresses Read Status Data (last two cycles) PA PA PA tAH CE# tCH OE# tWP WE# tWPH tCS tDS tWHWH1 tDH A0h Data PD Status tBUSY DOUT tRB RY/BY# VCC tVCS Notes 1. PA = program address, PD = program data, DOUT is the true data at the program address. 2. Illustration shows device in word mode. Figure 25. Accelerated Program Timing Diagram VHH HH ACC VILIL or VIH IH VILIL or VIH IH tVHH VHH Document Number: 001-98525 Rev. *B tVHH VHH Page 65 of 78 S29GL064N, S29GL032N Figure 26. Chip/Sector Erase Operation Timings Erase Command Sequence (last two cycles) tAS tWC 2AAh Addresses Read Status Data VA SA VA 555h for chip erase tAH CE# tCH OE# tWP WE# tWPH tCS tWHWH2 tDS tDH Data 55h In Progress 30h Complete 10 for Chip Erase tBUSY tRB RY/BY# tVCS VCC Notes 1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Write Operation Status on page 52.) 2. Illustration shows device in word mode. Figure 27. Data# Polling Timings (During Embedded Algorithms) tRC Addresses VA VA VA tACC tCE CE# tCH tOE OE# tOEH tDF WE# tOH High Z DQ7 Complement Complement DQ0–DQ6 Status Data Status Data True Valid Data High Z True Valid Data tBUSY RY/BY# Note VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. Document Number: 001-98525 Rev. *B Page 66 of 78 S29GL064N, S29GL032N Figure 28. Toggle Bit Timings (During Embedded Algorithms) tAHT tAS Addresses tAHT tASO CE# tCEPH tOEH WE# tOEPH OE# tDH DQ6 / DQ2 tCE Valid Status Valid Status Valid Status (first read) (second read) (stops toggling) Valid Data Valid Data RY/BY# Note VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. Figure 29. DQ2 vs. DQ6 Enter Embedded Erasing WE# Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Read Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete DQ6 DQ2 Note DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6. Document Number: 001-98525 Rev. *B Page 67 of 78 S29GL064N, S29GL032N Table 28. Alternate CE# Controlled Erase and Program Operations Parameter Speed Options Description JEDEC Std. 90 Unit 110 tAVAV tWC Write Cycle Time (Note 1) Min tAVWL tAS Address Setup Time Min 90 0 110 ns ns tELAX tAH Address Hold Time Min 45 ns tDVEH tDS Data Setup Time Min 35 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to CE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min 0 ns tELEH tCP CE# Pulse Width Min 35 ns tEHEL tCPH CE# Pulse Width High Min 25 ns Write Buffer Program Operation (Notes 2, 3) Typ 240 Single Word Program Operation (Note 2) Typ 60 tWHWH1 tWHWH1 Accelerated Single Word Program Operation (Note 2) Typ 54 tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 0.5 sec tRH RESET# High Time Before Write Min 50 ns µs Notes 1. Not 100% tested. 2. See the Erase And Programming Performance on page 70 for more information. 3. For 1–16 words/1–32 bytes programmed. Document Number: 001-98525 Rev. *B Page 68 of 78 S29GL064N, S29GL032N Figure 30. Alternate CE# Controlled Write (Erase/Program) Operation Timings PBA for program 2AA for erase SA for program buffer to flash SA for sector erase 555 for chip erase Data# Polling PA Addresses tWC tAS tAH tWH WE# tGHEL OE# tCP CE# tWS tWHWH1 or 2 tCPH tBUSY tDS tDH DQ7# Data tRH PBD for program 55 for erase DOUT 29 for program buffer to flash 30 for sector erase 10 for chip erase RESET# RY/BY# Notes 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data. 3. DQ7# is the complement of the data written to the device. DOUT is the data written to the device. 4. Illustration shows device in word mode. Document Number: 001-98525 Rev. *B Page 69 of 78 S29GL064N, S29GL032N 16. Erase And Programming Performance Parameter Sector Erase Time Chip Erase Time Typ (Note 1) Max (Note 2) 0.5 3.5 S29GL032N 32 64 S29GL064N 64 128 Total Write Buffer Program Time (Notes 3, 5) 240 Total Accelerated Effective Write Buffer Program Time (Notes 4, 5) 200 Chip Program Time Unit Comments sec Excludes 00h programming prior to erasure (Note 6) µs S29GL032N 31.5 S29GL064N 63 Excludes system level overhead (Note 7) sec Notes 1. Typical program and erase times assume the following conditions: 25C, VCC = 3.0V, 10,000 cycles; checkerboard data pattern. 2. Under worst case conditions of 90C; Worst case VCC, 100,000 cycles. 3. Programming time (typ) is 15 s (per word), 7.5 s (per byte). 4. Accelerated programming time (typ) is 12.5 s (per word), 6.3 s (per byte). 5. Write buffer Programming time is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation. 6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure. 7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Table 17 on page 47 and Table 19 on page 50 for further information on command definitions. Table 29. TSOP Pin and BGA Package Capacitance Parameter Symbol Parameter Description Test Setup CIN Input Capacitance VIN = 0 COUT Output Capacitance VOUT = 0 CIN2 Control Pin Capacitance VIN = 0 CIN3 #RESET, WP#/ACC Pin Capacitance VIN = 0 Typ Max Unit TSOP 6 10 pF BGA TBD TBD pF TSOP 6 12 pF BGA TBD TBD pF TSOP 6 10 pF BGA TBD TBD pF TSOP 27 30 pF BGA TBD TBD pF Notes 1. Sampled, not 100% tested. 2. Test conditions TA = 25°C, f = 1.0 MHz. Document Number: 001-98525 Rev. *B Page 70 of 78 S29GL064N, S29GL032N 17. Data Integrity 17.1 Erase Endurance Table 17.1 Erase Endurance Minimum Unit Program/Erase cycles per main Flash array sectors Parameter 100K PE cycle Program/Erase cycles per PPB array or non-volatile register array (1) 100K PE cycle Note: 1. Each write command to a non-volatile register causes a PE cycle on the entire non-volatile register array. 17.2 Data Retention Table 17.2 Data Retention Parameter Data Retention Time Test Conditions Minimum Time Unit 10K Program/Erase Cycles 20 Years 100K Program/Erase Cycles 2 Years Contact Cypress Sales and FAE for further information on the data integrity. An application note is available at: www.cypress.com/appnotes. Document Number: 001-98525 Rev. *B Page 71 of 78 S29GL064N, S29GL032N 18. Physical Dimensions 18.1 TS048—48-Pin Standard Thin Small Outline Package (TSOP) A2 2 0.10 C 1 N SEE DETAIL B -A- -BE 5 e 9 N +1 2 N 2 D1 D 5 A1 4 C SEATING PLANE B A 0.08MM (0.0031") M C A-B S B SEE DETAIL A b 6 7 WITH PLATING 7 (c) c1 b1 BASE METAL R c e/2 SECTION B-B GAGE LINE 0.25MM (0.0098") BSC 0˚ -X- PARALLEL TO SEATING PLANE L X = A OR B DETAIL A Package TS 048 Jedec MO-142 (B) EC Symbol A A1 A2 b1 b c1 c D D1 E e L 0 R MIN MAX 1.20 0.15 0.05 1.05 1.00 0.95 0.20 0.23 0.17 0.27 0.22 0.17 0.16 0.10 0.21 0.10 19.80 20.00 20.20 18.30 18.40 18.50 11.90 12.00 12.10 0.50 BASIC 0.70 0.50 0.60 3˚ 5˚ 0˚ 0.20 0.08 NOM DETAIL B NOTES: 1 CONTROLLING DIMENSIONS ARE IN MILLIMETERS (MM). (DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982) 2 PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP). 3 NOT APPLICABLE. 4 TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE. 5 DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS 0.15MM (.0059") PER SIDE. 6 DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE 0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028"). 7 THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND 0.25MM (0.0098") FROM THE LEAD TIP. 8 LEAD COPLANARITY SHALL BE WITHIN 0.10MM (0.004") AS MEASURED FROM THE SEATING PLANE. Document Number: 001-98525 Rev. *B Page 72 of 78 S29GL064N, S29GL032N 18.2 TS056—56-Pin Standard Thin Small Outline Package (TSOP) 2X 0.10 STANDARD PIN OUT (TOP VIEW) 2X (N/2 TIPS) 2X 2 0.10 0.10 1 A2 N SEE DETAIL B A REVERSE PIN OUT (TOP VIEW) 3 B 1 N E 5 N +1 2 N 2 D1 0.25 9 A1 4 D 2X (N/2 TIPS) e 5 C SEATING PLANE B A B N +1 2 N 2 SEE DETAIL A 0.08MM (0.0031") b M C A-B S 6 7 WITH PLATING 7 (c) c1 b1 SECTION B-B BASE METAL R (c) e/2 GAUGE PLANE θ° PARALLEL TO SEATING PLANE 0.25MM (0.0098") BSC DETAIL A Package TS 056 Jedec MO-142 (D) EC Symbol A A1 A2 b1 b c1 c D D1 E e L 0 R N MAX 1.20 0.15 0.05 1.05 1.00 0.95 0.20 0.23 0.17 0.27 0.22 0.17 0.16 0.10 0.21 0.10 19.80 20.00 20.20 18.30 18.40 18.50 13.90 14.00 14.10 0.50 BASIC 0.70 0.50 0.60 8˚ 0˚ 0.20 0.08 56 MIN NOM X C L X = A OR B DETAIL B NOTES: 1 CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm). (DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982) 2 PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE UP). 3 PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK. 4 TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE. 5 DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS 0.15mm (.0059") PER SIDE. 6 DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE 0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028"). 7 THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND 0.25MM (0.0098") FROM THE LEAD TIP. 8 LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM THE SEATING PLANE. 9 DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS. Document Number: 001-98525 Rev. *B 3356 \ 16-038.10c Page 73 of 78 S29GL064N, S29GL032N 18.3 VBK048—Ball Fine-pitch Ball Grid Array (BGA) 8.15x 6.15 mm Package 0.10 D (4X) D1 A 6 5 7 e 4 E SE E1 3 2 1 H PIN A1 CORNER INDEX MARK 6 B 10 G F φb E D C SD B A A1 CORNER 7 φ 0.08 M C TOP VIEW φ 0.15 M C A B BOTTOM VIEW 0.10 C A2 A SEATING PLANE A1 C 0.08 C SIDE VIEW NOTES: PACKAGE VBK 048 JEDEC 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. N/A 2. ALL DIMENSIONS ARE IN MILLIMETERS. 8.15 mm x 6.15 mm NOM PACKAGE SYMBOL MIN NOM MAX A --- --- 1.00 A1 0.18 --- --- A2 0.62 --- 0.76 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). NOTE OVERALL THICKNESS BALL HEIGHT 8.15 BSC. BODY SIZE E 6.15 BSC. BODY SIZE D1 5.60 BSC. E1 4.00 BSC. MD 8 ROW MATRIX SIZE D DIRECTION ME 6 ROW MATRIX SIZE E DIRECTION N 48 TOTAL BALL COUNT 0.35 --- BALL FOOTPRINT BALL FOOTPRINT 0.43 BALL DIAMETER e 0.80 BSC. BALL PITCH SD / SE 0.40 BSC. SOLDER BALL PLACEMENT --- DEPOPULATED SOLDER BALLS e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. BODY THICKNESS D φb 4. N IS THE TOTAL NUMBER OF SOLDER BALLS. 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION OR OTHER MEANS. 3338 \ 16-038.25 \ 10.05.04 Document Number: 001-98525 Rev. *B Page 74 of 78 S29GL064N, S29GL032N 18.4 LAA064—64-Ball Fortified Ball Grid Array (BGA) 13 x 11 mm Package NOTES: PACKAGE LAA 064 JEDEC 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. N/A 2. ALL DIMENSIONS ARE IN MILLIMETERS. 13.00 mm x 11.00 mm PACKAGE 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT AS NOTED). SYMBOL MIN NOM MAX NOTE A --- --- 1.40 A1 0.40 --- --- STANDOFF A2 0.60 --- --- BODY THICKNESS PROFILE HEIGHT D 13.00 BSC. BODY SIZE E 11.00 BSC. BODY SIZE D1 7.00 BSC. MATRIX FOOTPRINT E1 7.00 BSC. MD 8 MATRIX SIZE D DIRECTION ME 8 MATRIX SIZE E DIRECTION N 64 φb 0.50 0.60 MATRIX FOOTPRINT BALL COUNT 0.70 BALL DIAMETER eD 1.00 BSC. BALL PITCH - D DIRECTION eE 1.00 BSC. BALL PITCH - E DIRECTION SD / SE 0.50 BSC. SOLDER BALL PLACEMENT NONE DEPOPULATED SOLDER BALLS 4. e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. N IS THE TOTAL NUMBER OF SOLDER BALLS. 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 3354 \ 16-038.12d Document Number: 001-98525 Rev. *B Page 75 of 78 S29GL064N, S29GL032N 18.5 LAE064-64-Ball Fortified Ball Grid Array (BGA) 9 x 9 mm Package NOTES: PACKAGE LAE 064 JEDEC 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. N/A 2. ALL DIMENSIONS ARE IN MILLIMETERS. 9.00 mm x 9.00 mm PACKAGE 3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 EXCEPT AS NOTED). SYMBOL MIN NOM MAX A --- --- 1.40 A1 0.40 --- --- STANDOFF A2 0.60 --- --- BODY THICKNESS D 9.00 BSC. NOTE PROFILE HEIGHT E 9.00 BSC. BODY SIZE 7.00 BSC. MATRIX FOOTPRINT E1 7.00 BSC. MATRIX FOOTPRINT MD 8 MATRIX SIZE D DIRECTION ME 8 MATRIX SIZE E DIRECTION N 64 BALL COUNT 0.50 0.60 0.70 BALL DIAMETER eD 1.00 BSC. BALL PITCH - D DIRECTION eE 1.00 BSC. BALL PITCH - E DIRECTION SD / SE 0.50 BSC. SOLDER BALL PLACEMENT NONE DEPOPULATED SOLDER BALLS e REPRESENTS THE SOLDER BALL GRID PITCH. 5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE "D" DIRECTION. SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE "E" DIRECTION. BODY SIZE D1 φb 4. N IS THE TOTAL NUMBER OF SOLDER BALLS. 6 DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C. 7 SD AND SE ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW. WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW PARALLEL TO THE D OR E DIMENSION, RESPECTIVELY, SD OR SE = 0.000. WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, SD OR SE = e/2 8. NOT USED. 9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS. 3623 \ 16-038.12 \ 1.16.07 Document Number: 001-98525 Rev. *B Page 76 of 78 S29GL064N, S29GL032N 19. Revision History Document Title: S29GL064N, S29GL032N, 64 Mbit, 32 Mbit 3 V Page Mode MirrorBit Flash Document Number: 001-98525 Rev. ECN No. Orig. of Change **  RYSU *A 4968016 RYSU *B 5737059 Submission Date Description of Change Initial release. Global: Replaced LAE064 package with LAA064. Page Mode Read: Corrected bit ranges in first paragraph. Erase And Programming Performance: Modified maximum sector erase time in table. Connection Diagrams: 64-ball Fortified BGA (LAA 064) figure - Changed inputs for balls F1 and F7. Ordering Information: Removed regulated VCC range and replaced 90 ns with 110 ns for low VIO option Added Note 4 to PACKAGE MATERIAL SET Standard option Sector Addresses table: Corrected a table TSOP Pin and BGA Package Capacitance: Added values for TSOP Ordering Information: Removed leaded parts CFI Table: Altered Erase Block Region 1 & 2 Global: Change document status to Full Production Removed 70ns access speed Command Definitions (x16 mode) Table: Corrected addresses for Program operation Command Definitions (x8 mode) Table: Corrected addresses for Program operation GlobalRemoved VID (12V) Sector protect & unprotect features Primary Vendor-Specific Extended Query Table: Updated the data of CFI 02/12/2007 to address 45hex 10/29/2008 Primary Vendor-Specific Extended Query Table: Updated the data of CFI address 2D hex thru 34 hex. S29GL064N (Model 04) Bottom Boot Sector Addresses Table: Updated S29GL064N (Model 04) Bottom Boot Sector Addresses Erase and Program Operations TableChanged tDS from 45 ns to 35 ns Absolute Maximum Rating: Removed OE# form table and notes Alternate CE# Controlled Erase and Program Operations: Changed tDS from 45 ns to 35 ns Changed tCPH from 30 ns to 25 ns Requirements for Reading Array DataEntire section is re-written to explain requirements for reading array data Sector ProtectionTitle changed to Advanced Sector Protection Advanced Sector ProtectionSection removed Erase and Program OperationsRemoved note 4 Alternate CE# Controlled Erase and Program OperationsRemoved note 4 GlobalCorrected minor typos AC Characteristics: Updated Data#Polling Timing DC Characteristics: Changed Note 1 in Table DC Characteristics- CMOS Compatible Ordering Information: Added LAE064 package option Connection Diagram: Figure 3.3; Title changed to 64ball Fortified BGA Physical Dimensions: Added LAE064 package option Ordering Information: Updated Valid Combinations Table RYSU Document Number: 001-98525 Rev. *B 10/16/2015 Updated to Cypress template. 05/26/2017 Updated Cypress logo. Added Automotive part numbers. Added Section 17.1 Erase Endurance on page 71 and Section 17.2 Data Retention on page 71. Page 77 of 78 S29GL064N, S29GL032N Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. 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You shall indemnify and hold Cypress harmless from and against all claims, costs, damages, and other liabilities, including claims for personal injury or death, arising from or related to any Unintended Uses of Cypress products. Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners. Document Number: 001-98525 Rev. *B Revised May 26, 2017 Page 78 of 78