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S29JL032J60TFI213

S29JL032J60TFI213

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    TFSOP48

  • 描述:

    IC FLASH 32MBIT PARALLEL 48TSOP

  • 详情介绍
  • 数据手册
  • 价格&库存
S29JL032J60TFI213 数据手册
Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as “Cypress” document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.com S29JL032J 32-Mb (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash 32-Mb (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash Distinctive Characteristics Architectural Advantages ■ ❐ Simultaneous Read/Write operations ❐ Data can be continuously read from one bank while executing erase/program functions in another bank. ❐ Zero latency between read and write operations ■ Multiple bank architecture ❐ Four bank architectures available (see Table 2 on page 15). ■ Boot sectors ❐ Top or bottom boot sector configurations available ❐ Any combination of sectors can be erased ■ Manufactured on 0.11 µm Process Technology ■ Secured Silicon Region: Extra 256 byte sector ❐ Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function ❐ Customer lockable: One-time programmable only. Once locked, data cannot be changed ■ Zero power operation ❐ Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero. ■ Compatible with JEDEC standards ❐ Pinout and software compatible with single-power-supply flash standard ❐ ■ Cycling endurance: 100K cycles per sector ■ Data retention: 20 years typical Software Features ■ Supports Common Flash Memory Interface (CFI) ■ Erase suspend/Erase resume ❐ Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation. ■ Data# polling and toggle bits ❐ Provides a software method of detecting the status of program or erase operations ■ Unlock bypass program command ❐ Reduces overall programming time when issuing multiple program command sequences Hardware Features ■ Ready/Busy# output (RY/BY#) ❐ Hardware method for detecting program or erase cycle completion ■ Hardware reset pin (RESET#) ❐ Hardware method of resetting the internal state machine to the read mode ■ WP#/ACC input pin ❐ Write protect (WP#) function protects the two outermost boot sectors regardless of sector protect status ❐ Acceleration (ACC) function accelerates program timing ■ Sector protection ❐ Hardware method to prevent any program or erase operation within a sector ❐ Temporary Sector Unprotect allows changing data in protected sectors in-system Package Options ■ 48-ball Fine-pitch BGA ■ 48-pin TSOP Performance Characteristics ■ High performance ❐ Access time as fast as 60 ns ❐ Program time: 6 µs/word typical using accelerated programming function ■ Ultra low power consumption (typical values) ❐ 2 mA active read current at 1 MHz Cypress Semiconductor Corporation Document Number: 002-00857 Rev. *J • 10 mA active read current at 5 MHz 200 nA in standby or automatic sleep mode 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Revised May 31, 2019 S29JL032J General Description The S29JL032J is a 32 Mb, 3.0 volt-only flash memory device, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. The device is available with an access time of 60, or 70 ns and is offered in a 48-ball FBGA or a 48-pin TSOP package. Standard control pins—chip enable (CE#), write enable (WE#), and output enable (OE#)—control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. Document Number: 002-00857 Rev. *J Page 2 of 105 S29JL032J Contents Distinctive Characteristics .................................................. 1 General Description ............................................................. 2 1. Simultaneous Read/Write Operations with Zero Latency ................................................................. 4 1.1 S29JL032J Features...................................................... 4 11. 11.1 11.2 11.3 11.4 11.5 11.6 11.7 Write Operation Status ............................................... 37 DQ7: Data# Polling ....................................................... 37 RY/BY#: Ready/Busy#.................................................. 39 DQ6: Toggle Bit I .......................................................... 39 DQ2: Toggle Bit II ......................................................... 40 Reading Toggle Bits DQ6/DQ2..................................... 41 DQ5: Exceeded Timing Limits ...................................... 41 DQ3: Sector Erase Timer.............................................. 42 12. Absolute Maximum Ratings....................................... 43 13. Operating Ranges ....................................................... 44 2. Product Selector Guide ............................................... 5 3. 3.1 3.2 Block Diagram.............................................................. 5 4-Bank Device................................................................ 5 2-Bank Device................................................................ 6 4. 4.1 4.2 Connection Diagrams.................................................. 7 48-pin TSOP Package ................................................... 7 48-ball FBGA Package .................................................. 7 14. DC Characteristics...................................................... 44 14.1 CMOS Compatible ........................................................ 44 14.2 Zero-Power Flash ......................................................... 45 5. Pin Description............................................................. 8 15. Test Conditions ........................................................... 47 6. Logic Symbol ............................................................... 9 16. Key To Switching Waveforms .................................... 47 7. Ordering Information ................................................. 10 8. 8.1 8.2 8.3 8.4 AC Characteristics...................................................... 48 Read-Only Operations .................................................. 48 Hardware Reset (RESET#)........................................... 49 Word/Byte Configuration (BYTE#) ................................ 50 Erase and Program Operations .................................... 51 Temporary Sector Unprotect......................................... 55 Alternate CE# Controlled Erase and Program Operations............................................... 56 8.11 8.12 8.13 8.14 Device Bus Operations.............................................. Word/Byte Configuration.............................................. Requirements for Reading Array Data......................... Writing Commands/Command Sequences.................. Simultaneous Read/Write Operations with Zero Latency......................................................... Standby Mode.............................................................. Automatic Sleep Mode................................................. RESET#: Hardware Reset Pin..................................... Output Disable Mode ................................................... Autoselect Mode .......................................................... Boot Sector/Sector Block Protection and Unprotection ........................................ Write Protect (WP#) ..................................................... Temporary Sector Unprotect........................................ Secured Silicon Region................................................ Hardware Data Protection............................................ 17. 17.1 17.2 17.3 17.4 17.5 17.6 9. Common Flash Memory Interface (CFI) ................... 27 10. 10.1 10.2 10.3 10.4 Command Definitions................................................ Reading Array Data ..................................................... Reset Command .......................................................... Autoselect Command Sequence ................................. Enter Secured Silicon Region/ Exit Secured Silicon Region Command Sequence...... Byte/Word Program Command Sequence................... Chip Erase Command Sequence ................................ Sector Erase Command Sequence ............................. Erase Suspend/Erase Resume Commands ................ 8.5 8.6 8.7 8.8 8.9 8.10 10.5 10.6 10.7 10.8 Document Number: 002-00857 Rev. *J 12 12 13 13 14 14 14 14 15 20 21 23 23 25 26 30 30 30 31 31 31 33 33 35 18. Data Integrity ............................................................... 58 18.1 Erase Endurance .......................................................... 58 18.2 Data Retention .............................................................. 58 19. Erase and Programming Performance ..................... 59 20. Pin Capacitance .......................................................... 59 21. Physical Dimensions .................................................. 60 21.1 TS 048—48-Pin TSOP.................................................. 60 21.2 VBK048—48-Pin FBGA ................................................ 61 22. Document History ....................................................... 62 Document History Page .....................................................62 Sales, Solutions, and Legal Information ..........................65 Worldwide Sales and Design Support ...........................65 Products ........................................................................65 PSoC® Solutions ..........................................................65 Cypress Developer Community .....................................65 Technical Support .........................................................65 Page 3 of 65 S29JL032J 1. Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into separate banks (see Table 2 on page 15). Sector addresses are fixed, system software can be used to form user-defined bank groups. During an Erase/Program operation, any of the non-busy banks may be read from. Note that only two banks can operate simultaneously. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. The S29JL032J can be organized with either a top or bottom boot sector configuration. 1.1 S29JL032J Features The Secured Silicon Region is an extra 256 byte sector capable of being permanently locked by the customer. The Secured Silicon Customer Indicator Bit (DQ6) is permanently set to 1 if the part has been locked and is 0 if lockable. Customers may utilize the Secured Silicon Region as bonus space, reading and writing like any other flash sector, or may permanently lock their own code there. The device offers complete compatibility with the JEDEC 42.4 single-power-supply Flash command set standard. Commands are written to the command register using standard microprocessor write timings. Reading data out of the device is similar to reading from other Flash or EPROM devices. The host system can detect whether a program or erase operation is complete by using the device status bits: RY/BY# pin, DQ7 (Data# Polling) and DQ6/DQ2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to the read mode. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low V CC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend/Erase Resume feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. If a read is needed from the Secured Silicon Region area (One Time Program area) after an erase suspend, then the user must use the proper command sequence to enter and exit this region. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both modes. Document Number: 002-00857 Rev. *J Page 4 of 65 S29JL032J 2. Product Selector Guide Part Number S29JL032J Standard Voltage Range: VCC = 3.0–3.6 V Speed Option 60 Standard Voltage Range: VCC = 2.7–3.6 V 70 Max Access Time (ns), tACC 60 70 CE# Access (ns), tCE 60 70 OE# Access (ns), tOE 25 30 3. Block Diagram 4-Bank Device VCC VSS OE# Mux BYTE# Bank 1 Bank 2 Address Bank 2 X-Decoder A20–A0 RESET# WE# CE# BYTE# WP#/ACC STATE CONTROL & COMMAND REGISTER Status DQ15–DQ0 Control Mux DQ15–DQ0 DQ0–DQ15 Bank 3 Address Bank 3 X-Decoder A20–A0 Bank 4 Address Y-gate A20–A0 X-Decoder DQ15–DQ0 RY/BY# DQ15–DQ0 A20–A0 X-Decoder DQ15–DQ0 Bank 1 Address A20–A0 Y-gate 3.1 Bank 4 Mux Document Number: 002-00857 Rev. *J Page 5 of 65 S29JL032J 2-Bank Device A20–A0 Y-Decoder Upper Bank Address A20–A0 RY/BY# X-Decoder A20–A0 WE# CE# BYTE# STATE CONTROL & COMMAND REGISTER Status DQ15–DQ0 Control WP#/ACC DQ15–DQ0 Lower Bank Address Lower Bank Latches and Control Logic A20–A0 Y-Decoder A20–A0 X-Decoder DQ15–DQ0 RESET# Upper Bank DQ15–DQ0 OE# BYTE# VCC VSS Latches and Control Logic 3.2 OE# BYTE# Document Number: 002-00857 Rev. *J Page 6 of 65 S29JL032J 4. Connection Diagrams 4.1 48-pin TSOP Package A15 A14 A13 A12 A11 A10 A9 A8 A19 A20 WE# RESET# NC WP#/ACC RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 4.2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 48-Pin Standard TSOP A16 BYTE# VSS DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 48-ball FBGA Package A6 B6 C6 D6 E6 A13 A12 A14 A15 A16 F6 G6 A5 B5 C5 D5 E5 F5 G5 H5 A9 A8 A10 A11 DQ7 DQ14 DQ13 DQ6 BYTE# DQ15/A-1 H6 VSS A4 B4 C4 D4 E4 F4 G4 H4 WE# RESET# NC A19 DQ5 DQ12 VCC DQ4 A3 B3 RY/BY# WP#/ACC C3 D3 E3 F3 G3 H3 A18 A20 DQ2 DQ10 DQ11 DQ3 A2 B2 C2 D2 E2 F2 G2 H2 A7 A17 A6 A5 DQ0 DQ8 DQ9 DQ1 A1 B1 C1 D1 E1 F1 G1 H1 A3 A4 A2 A1 A0 CE# OE# VSS Document Number: 002-00857 Rev. *J Page 7 of 65 S29JL032J 5. Pin Description A20–A0 21 Address Pins DQ14–DQ0 15 Data Inputs/Outputs (x16-only devices) DQ15/A-1 DQ15 (Data Input/Output, word mode), A-1 (LSB Address Input, byte mode) CE# Chip Enable, Active Low OE# Output Enable, Active Low WE# Write Enable, Active Low WP#/ACC Hardware Write Protect/Acceleration Pin. RESET# Hardware Reset Pin, Active Low BYTE# Selects 8-bit or 16-bit mode, Active Low RY/BY# Ready/Busy Output, Active Low VCC 3.0 volt-only single power supply (see Section 2. Product Selector Guide on page 5 for speed options and voltage supply tolerances) VSS Device Ground NC Not Connected – No device internal signal is connected to the package connector nor is there any future plan to use the connector for a signal. The connection may safely be used for routing space for a signal on a Printed Circuit Board (PCB). Document Number: 002-00857 Rev. *J Page 8 of 65 S29JL032J 6. Logic Symbol 21 A20–A0 16 or 8 DQ15–DQ0 (A-1) CE# OE# WE# WP#/ACC RESET# RY/BY# BYTE# Document Number: 002-00857 Rev. *J Page 9 of 65 S29JL032J 7. Ordering Information The order number (Valid Combination) is formed by the following: S29JL032J 60 T F I 01 0 Packing Type 0 = Tray 3 = 13-inch Tape and Reel Model Number 01 = Top Boot Device, 4 Banks: 4/12/12/4 Mb 02 = Bottom Boot Device, 4 Banks: 4/12/12/4 Mb 21 = Top Boot Device, 2 Banks: 4/28 Mb 22 = Bottom Boot Device, 2 Banks: 4/28 Mb 31 = Top Boot Device, 2 Banks: 8/24 Mb 32 = Bottom Boot Device, 2 Banks: 8/24 Mb 41 = Top Boot Device, 2 Banks: 16/16 Mb 42 = Bottom Boot Device, 2 Banks: 16/16 Mb Temperature Range I = Industrial (–40°C to +85°C) A = Automotive, AEC-Q100 Grade 3 (-40°C to +85°C) Package Material Set F = Pb-free H = Low-halogen, Pb-free Package Type B = Fine-pitch Ball Grid Array Package T = Thin Small Outline Package (TSOP) Standard Pinout Speed Option 60 = 60 ns 70 = 70 ns Device Family S29JL032J 3.0 Volt-only, 32-Mb (2M x 16-Bit/4M x 8-Bit) Simultaneous Read/Write Flash Memory Manufactured on 110 nm process technology Valid Combinations — Standard S29JL032J Valid Combinations Device Number/ Description Speed (ns) S29JL032J 60, 70 Package Type TF BH Temperature Range I Additional Ordering Options 01, 02, 21, 22, 31, 32, 41, 42 31, 32 Packing Type 0, 3[1] Package Description TS048 TSOP VBK048 FBGA Note 1. Type 0 is standard. Specify others as required. Document Number: 002-00857 Rev. *J Page 10 of 65 S29JL032J Valid Combinations — Automotive Grade / AEC-Q100 The table below lists configurations that are Automotive Grade / AEC-Q100 qualified and are planned to be available in volume. The table will be updated as new combinations are released. Consult your local sales representative to confirm availability of specific combinations and to check on newly released combinations. Production Part Approval Process (PPAP) support is only provided for AEC-Q100 grade products. Products to be used in end-use applications that require ISO/TS-16949 compliance must be AEC-Q100 grade products in combination with PPAP. Non–AEC-Q100 grade products are not manufactured or documented in full compliance with ISO/TS-16949 requirements. AEC-Q100 grade products are also offered without PPAP support for end-use applications that do not require ISO/TS-16949 compliance. S29JL032J Valid Combinations - Automotive Device Number Speed (ns) Package Type and Material Temperature Range Model Number Packing Type Package Description S29JL032J 70 TF A 01 0, 3 TSOP Document Number: 002-00857 Rev. *J Page 11 of 65 S29JL032J 8. Device Bus Operations This section describes the requirements and use of the device bus operations, which are initiated through the internal command register. The command register itself does not occupy any addressable memory location. The register is a latch used to store the commands, along with the address and data information needed to execute the command. The contents of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections describe each of these operations in further detail. Table 1. S29JL032J Device Bus Operations CE# OE# WE# RESET# WP#/ ACC Read L L H H L/H Write L H L H VCC  0.3V X X Output Disable L H Reset X X Sector Protect[3] L Sector Unprotect[3] Temporary Sector Unprotect Operation Standby Addresses[1] DQ15–DQ8 BYTE# = VIH BYTE# = VIL DQ7–DQ0 AIN DOUT DOUT Note [4] AIN DIN DQ14–DQ8 = High-Z, DQ15 = A-1 VCC  0.3V L/H X High-Z High-Z High-Z H H L/H X High-Z High-Z High-Z X L L/H X High-Z High-Z High-Z H L VID L/H SA, A6 = L, A1 = H, A0 = L X X DIN L H L VID Note [4] SA, A6 = H, A1 = H, A0 = L X X DIN X X X VID Note [4] AIN DIN High-Z DIN DIN Legend L = Logic Low = VIL H = Logic High = VIH VID = 8.5–12.5V VHH = 9.0 ± 0.5V X = Don’t Care SA = Sector Address AIN = Address In DIN = Data In DOUT = Data Out Notes 2. Addresses are A20:A0 in word mode (BYTE# = VIH), A20:A-1 in byte mode (BYTE# = VIL). 3. The sector protect and sector unprotect functions may also be implemented via programming equipment. See Section 8.10 Boot Sector/Sector Block Protection and Unprotection on page 21. 4. If WP#/ACC = VIL, the two outermost boot sectors remain protected. If WP#/ACC = VIH, protection on the two outermost boot sectors depends on whether they were last protected or unprotected using the method described in Boot Sector/Sector Block Protection and Unprotection. If WP#/ACC = VHH, all sectors will be unprotected. 8.1 Word/Byte Configuration The BYTE# pin controls whether the device data I/O pins operate in the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in word configuration, DQ15–DQ0 are active and controlled by CE# and OE#. If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only data I/O pins DQ7–DQ0 are active and controlled by CE# and OE#. The data I/O pins DQ14–DQ8 are tristated, and the DQ15 pin is used as an input for the LSB (A-1) address function. Document Number: 002-00857 Rev. *J Page 12 of 65 S29JL032J 8.2 Requirements for Reading Array Data To read array data from the outputs, the system must drive the CE# and OE# pins to VIL. CE# is the power control and selects the device. OE# is the output control and gates array data to the output pins. WE# should remain at VIH. The BYTE# pin determines whether the device outputs array data in words or bytes. The internal state machine is set for reading array data upon device power-up, or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. Each bank remains enabled for read access until the command register contents are altered. Refer to the Section 17.1 Read-Only Operations on page 48 for timing specifications and to Figure 12 on page 48 for the timing diagram. ICC1 in Section 14. DC Characteristics on page 44 represents the active current specification for reading array data. 8.3 Writing Commands/Command Sequences To write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive WE# and CE# to VIL, and OE# to VIH. For program operations, the BYTE# pin determines whether the device accepts program data in bytes or words. Refer to Section 8.1 Word/Byte Configuration on page 12 for more information. The device features an Unlock Bypass mode to facilitate faster programming. Once a bank enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. Section 10.5 Byte/Word Program Command Sequence on page 31 has details on programming data to the device using both standard and Unlock Bypass command sequences. An erase operation can erase one sector, multiple sectors, or the entire device. Table 3 on page 16 and Table 4 on page 18 indicate the address space that each sector occupies. Similarly, a “sector address” is the address bits required to uniquely select a sector. Section 10. Command Definitions on page 30 has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. The device address space is divided into four banks. A “bank address” is the address bits required to uniquely select a bank. ICC2 in the DC Characteristics table represents the active current specification for the write mode. Section 17. AC Characteristics on page 48 contains timing specification tables and timing diagrams for write operations. 8.3.1 Accelerated Program Operation The device offers accelerated program operations through the ACC function. This is one of two functions provided by the WP#/ACC pin. This function is primarily intended to allow faster manufacturing throughput at the factory. If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the time required for program operations. The system would use a two-cycle program command sequence as required by the Unlock Bypass mode. Removing VHH from the WP#/ ACC pin returns the device to normal operation. Note that VHH must not be asserted on WP#/ACC for operations other than accelerated programming, or device damage may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. See Section 8.11 Write Protect (WP#) on page 23 for related information. 8.3.2 Autoselect Functions If the system writes the autoselect command sequence, the device enters the autoselect mode. The system can then read autoselect codes from the internal register (which is separate from the memory array) on DQ15–DQ0. Standard read cycle timings apply in this mode. Refer to Section 8.9 Autoselect Mode on page 20 and Section 10.3 Autoselect Command Sequence on page 31 for more information. Document Number: 002-00857 Rev. *J Page 13 of 65 S29JL032J 8.4 Simultaneous Read/Write Operations with Zero Latency This device is capable of reading data from one bank of memory while programming or erasing in another bank of memory. An erase operation may also be suspended to read from or program to another location within the same bank (except the sector being erased). Figure 17 on page 53 shows how read and write cycles may be initiated for simultaneous operation with zero latency. ICC6 and ICC7 in Section 14. DC Characteristics on page 44 represent the current specifications for read-while-program and read-whileerase, respectively. 8.5 Standby Mode When the system is not reading or writing to the device, it can place the device in the standby mode. In this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, independent of the OE# input. The device enters the CMOS standby mode when the CE# and RESET# pins are both held at VCC ± 0.3V. Note that this is a more restricted voltage range than VIH. If CE# and RESET# are held at VIH, but not within VCC ± 0.3V, the device will be in the standby mode, but the standby current will be greater. The device requires standard access time (tCE) for read access when the device is in either of these standby modes, before it is ready to read data. If the device is deselected during erasure or programming, the device draws active current until the operation is completed. ICC3 in Section 14. DC Characteristics on page 44 represents the standby current specification. 8.6 Automatic Sleep Mode The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30 ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are changed. While in sleep mode, output data is latched and always available to the system. ICC5 in DC Characteristics represents the automatic sleep mode current specification. 8.7 RESET#: Hardware Reset Pin The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/ write commands for the duration of the RESET# pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. Current is reduced for the duration of the RESET# pulse. When RESET# is held at VSS±0.3V, the device draws CMOS standby current (ICC4). If RESET# is held at VIL but not within VSS±0.3V, the standby current will be greater. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory. If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether the reset operation is complete. If RESET# is asserted when a program or erase operation is not executing (RY/BY# pin is “1”), the reset operation is completed within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH. Refer to Section 17.2 Hardware Reset (RESET#) on page 49 for RESET# parameters and to Figure 13 on page 49 for the timing diagram. Document Number: 002-00857 Rev. *J Page 14 of 65 S29JL032J 8.8 Output Disable Mode When the OE# input is at VIH, output from the device is disabled. The output pins are placed in the high impedance state. Table 2. S29JL032J Bank Architecture Device Model Number 01, 02 Bank 1 Bank 2 Bank 3 Bank 4 Mb Sector Size Mb Sector Size Mb Sector Size Mb Sector Size 4 Mb Eight 8 KB/ 4 kword, seven 64 KB/ 32 kword 12 Mb Twenty-four 64 KB/ 32 kword 12 Mb Twenty-four 64 KB/ 32 kword 4 Mb Eight 64 KB/ 32 kword Bank 1 Bank 2 Device Model Number Mbs Sector Size Mb 21, 22 4 Mb Eight 8 KB/4 kword, seven 64 KB/32 kword 28 Mb 31, 32 8 Mb Eight 8 KB/4 kword, fifteen 64 KB/32 kword 24 Mb Forty-eight 64 KB/32 kword 41, 42 16 Mb Eight 8 KB/4 kword, thirty-one 64 KB/32 kword 16 Mb Thirty-two 64 KB/32 kword Document Number: 002-00857 Rev. *J Sector Size Fifty-six 64 KB/32 kword Page 15 of 65 S29JL032J S29JL032J (Model 01) Bank 3 Bank 2 Bank 2 Bank 2 Bank 4 S29JL032J (Model 21) S29JL032J (Model 31) S29JL032J (Model 41) Table 3. S29JL032J Sector Addresses - Top Boot Devices Document Number: 002-00857 Rev. *J Sector Sector Address A20–A12 Sector Size (KB/kwords) (x8) Address Range (x16) Address Range SA0 000000xxx 64/32 000000h-00FFFFh 000000h-07FFFh SA1 000001xxx 64/32 010000h-01FFFFh 008000h-0FFFFh SA2 000010xxx 64/32 020000h-02FFFFh 010000h-17FFFh SA3 000011xxx 64/32 030000h-03FFFFh 018000h-01FFFFh SA4 000100xxx 64/32 040000h-04FFFFh 020000h-027FFFh SA5 000101xxx 64/32 050000h-05FFFFh 028000h-02FFFFh SA6 000110xxx 64/32 060000h-06FFFFh 030000h-037FFFh SA7 000111xxx 64/32 070000h-07FFFFh 038000h-03FFFFh SA8 001000xxx 64/32 080000h-08FFFFh 040000h-047FFFh SA9 001001xxx 64/32 090000h-09FFFFh 048000h-04FFFFh SA10 001010xxx 64/32 0A0000h-0AFFFFh 050000h-057FFFh SA11 001011xxx 64/32 0B0000h-0BFFFFh 058000h-05FFFFh SA12 001100xxx 64/32 0C0000h-0CFFFFh 060000h-067FFFh SA13 001101xxx 64/32 0D0000h-0DFFFFh 068000h-06FFFFh SA14 001110xxx 64/32 0E0000h-0EFFFFh 070000h-077FFFh SA15 001111xxx 64/32 0F0000h-0FFFFFh 078000h-07FFFFh SA16 010000xxx 64/32 100000h-10FFFFh 080000h-087FFFh SA17 010001xxx 64/32 110000h-11FFFFh 088000h-08FFFFh SA18 010010xxx 64/32 120000h-12FFFFh 090000h-097FFFh SA19 010011xxx 64/32 130000h-13FFFFh 098000h-09FFFFh SA20 010100xxx 64/32 140000h-14FFFFh 0A0000h-0A7FFFh SA21 010101xxx 64/32 150000h-15FFFFh 0A8000h-0AFFFFh SA22 010110xxx 64/32 160000h-16FFFFh 0B0000h-0B7FFFh SA23 010111xxx 64/32 170000h-17FFFFh 0B8000h-0BFFFFh SA24 011000xxx 64/32 180000h-18FFFFh 0C0000h-0C7FFFh SA25 011001xxx 64/32 190000h-19FFFFh 0C8000h-0CFFFFh SA26 011010xxx 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh SA27 011011xxx 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh SA28 011100xxx 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh SA29 011101xxx 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh SA30 011110xxx 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh SA31 011111xxx 64/32 1F0000h-1FFFFFh 0F8000h-0FFFFFh Page 16 of 65 S29JL032J S29JL032J (Model 01) Bank 2 S29JL032J (Model 21) Bank 2 (continued) S29JL032J (Model 31) Bank 1 Bank 1 Bank 1 Bank 1 Bank 2 (continued) S29JL032J (Model 41) Table 3. S29JL032J Sector Addresses - Top Boot Devices (Continued) Document Number: 002-00857 Rev. *J Sector Sector Address A20–A12 Sector Size (KB/kwords) (x8) Address Range (x16) Address Range SA32 100000xxx 64/32 200000h-20FFFFh 100000h-107FFFh SA33 100001xxx 64/32 210000h-21FFFFh 108000h-10FFFFh SA34 100010xxx 64/32 220000h-22FFFFh 110000h-117FFFh SA35 100011xxx 64/32 230000h-23FFFFh 118000h-11FFFFh SA36 100100xxx 64/32 240000h-24FFFFh 120000h-127FFFh SA37 100101xxx 64/32 250000h-25FFFFh 128000h-12FFFFh SA38 100110xxx 64/32 260000h-26FFFFh 130000h-137FFFh SA39 100111xxx 64/32 270000h-27FFFFh 138000h-13FFFFh SA40 101000xxx 64/32 280000h-28FFFFh 140000h-147FFFh SA41 101001xxx 64/32 290000h-29FFFFh 148000h-14FFFFh SA42 101010xxx 64/32 2A0000h-2AFFFFh 150000h-157FFFh SA43 101011xxx 64/32 2B0000h-2BFFFFh 158000h-15FFFFh SA44 101100xxx 64/32 2C0000h-2CFFFFh 160000h-167FFFh SA45 101101xxx 64/32 2D0000h-2DFFFFh 168000h-16FFFFh SA46 101110xxx 64/32 2E0000h-2EFFFFh 170000h-177FFFh SA47 101111xxx 64/32 2F0000h-2FFFFFh 178000h-17FFFFh SA48 110000xxx 64/32 300000h-30FFFFh 180000h-187FFFh SA49 110001xxx 64/32 310000h-31FFFFh 188000h-18FFFFh SA50 110010xxx 64/32 320000h-32FFFFh 190000h-197FFFh SA51 110011xxx 64/32 330000h-33FFFFh 198000h-19FFFFh SA52 110100xxx 64/32 340000h-34FFFFh 1A0000h-1A7FFFh SA53 110101xxx 64/32 350000h-35FFFFh 1A8000h-1AFFFFh SA54 110110xxx 64/32 360000h-36FFFFh 1B0000h-1BFFFFh SA55 110111xxx 64/32 370000h-37FFFFh 1B8000h-1BFFFFh SA56 111000xxx 64/32 380000h-38FFFFh 1C0000h-1C7FFFh SA57 111001xxx 64/32 390000h-39FFFFh 1C8000h-1CFFFFh SA58 111010xxx 64/32 3A0000h-3AFFFFh 1D0000h-1DFFFFh SA59 111011xxx 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh SA60 111100xxx 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh SA61 111101xxx 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh SA62 111110xxx 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh SA63 111111000 8/4 3F0000h-3F1FFFh 1F8000h-1F8FFFh SA64 111111001 8/4 3F2000h-3F3FFFh 1F9000h-1F9FFFh SA65 111111010 8/4 3F4000h-3F5FFFh 1FA000h-1FAFFFh SA66 111111011 8/4 3F6000h-3F7FFFh 1FB000h-1FBFFFh SA67 111111100 8/4 3F8000h-3F9FFFh 1FC000h-1FCFFFh SA68 111111101 8/4 3FA000h-3FBFFFh 1FD000h-1FDFFFh SA69 111111110 8/4 3FC000h-3FDFFFh 1FE000h-1FEFFFh SA70 111111111 8/4 3FE000h-3FFFFFh 1FF000h-1FFFFFh Page 17 of 65 S29JL032J Bank 2 S29JL032J (Model 02) Bank 1 S29JL032J (Model 22) Bank 2 Bank 2 Bank 1 Bank 1 Bank 1 S29JL032J (Model 32) S29JL032J (Model 42) Table 4. S29JL032J Sector Addresses - Bottom Boot Devices Sector Sector Address A20–A12 Sector Size (KB/kwords) (x8) Address Range (x16) Address Range SA0 000000000 8/4 000000h-001FFFh 000000h-000FFFh SA1 000000001 8/4 002000h-003FFFh 001000h-001FFFh SA2 000000010 8/4 004000h-005FFFh 002000h-002FFFh SA3 000000011 8/4 006000h-007FFFh 003000h-003FFFh SA4 000000100 8/4 008000h-009FFFh 004000h-004FFFh SA5 000000101 8/4 00A000h-00BFFFh 005000h-005FFFh SA6 000000110 8/4 00C000h-00DFFFh 006000h-006FFFh SA7 000000111 8/4 00E000h-00FFFFh 007000h-007FFFh SA8 000001xxx 64/32 010000h-01FFFFh 008000h-00FFFFh SA9 000010xxx 64/32 020000h-02FFFFh 010000h-017FFFh SA10 000011xxx 64/32 030000h-03FFFFh 018000h-01FFFFh SA11 000100xxx 64/32 040000h-04FFFFh 020000h-027FFFh SA12 000101xxx 64/32 050000h-05FFFFh 028000h-02FFFFh SA13 000110xxx 64/32 060000h-06FFFFh 030000h-037FFFh SA14 000111xxx 64/32 070000h-07FFFFh 038000h-03FFFFh SA15 001000xxx 64/32 080000h-08FFFFh 040000h-047FFFh SA16 001001xxx 64/32 090000h-09FFFFh 048000h-04FFFFh SA17 001010xxx 64/32 0A0000h-0AFFFFh 050000h-057FFFh SA18 001011xxx 64/32 0B0000h-0BFFFFh 058000h-05FFFFh SA19 001100xxx 64/32 0C0000h-0CFFFFh 060000h-067FFFh SA20 001101xxx 64/32 0D0000h-0DFFFFh 068000h-06FFFFh SA21 001110xxx 64/32 0E0000h-0EFFFFh 070000h-077FFFh SA22 001111xxx 64/32 0F0000h-0FFFFFh 078000h-07FFFFh SA23 010000xxx 64/32 100000h-10FFFFh 080000h-087FFFh SA24 010001xxx 64/32 110000h-11FFFFh 088000h-08FFFFh SA25 010010xxx 64/32 120000h-12FFFFh 090000h-097FFFh SA26 010011xxx 64/32 130000h-13FFFFh 098000h-09FFFFh SA27 010100xxx 64/32 140000h-14FFFFh 0A0000h-0A7FFFh SA28 010101xxx 64/32 150000h-15FFFFh 0A8000h-0AFFFFh SA29 010110xxx 64/32 160000h-16FFFFh 0B0000h-0B7FFFh SA30 010111xxx 64/32 170000h-17FFFFh 0B8000h-0BFFFFh SA31 011000xxx 64/32 180000h-18FFFFh 0C0000h-0C7FFFh SA32 011001xxx 64/32 190000h-19FFFFh 0C8000h-0CFFFFh SA33 011010xxx 64/32 1A0000h-1AFFFFh 0D0000h-0D7FFFh SA34 011011xxx 64/32 1B0000h-1BFFFFh 0D8000h-0DFFFFh SA35 011100xxx 64/32 1C0000h-1CFFFFh 0E0000h-0E7FFFh SA36 011101xxx 64/32 1D0000h-1DFFFFh 0E8000h-0EFFFFh SA37 011110xxx 64/32 1E0000h-1EFFFFh 0F0000h-0F7FFFh SA38 011111xxx 64/32 1F0000h-1FFFFFh 0F8000h-0FFFFFh Document Number: 002-00857 Rev. *J Page 18 of 65 S29JL032J S29JL032J (Model 02) Bank 4 Bank 2 (continued) Bank 2 (continued) Bank 2 Bank 3 S29JL032J (Model 22) S29JL032J (Model 32) S29JL032J (Model 42) Table 4. S29JL032J Sector Addresses - Bottom Boot Devices (Continued) Sector Sector Address A20–A12 Sector Size (KB/kwords) (x8) Address Range (x16) Address Range SA39 100000xxx 64/32 200000h-20FFFFh 100000h-107FFFh SA40 100001xxx 64/32 210000h-21FFFFh 108000h-10FFFFh SA41 100010xxx 64/32 220000h-22FFFFh 110000h-117FFFh SA42 100011xxx 64/32 230000h-23FFFFh 118000h-11FFFFh SA43 100100xxx 64/32 240000h-24FFFFh 120000h-127FFFh SA44 100101xxx 64/32 250000h-25FFFFh 128000h-12FFFFh SA45 100110xxx 64/32 260000h-26FFFFh 130000h-137FFFh SA46 100111xxx 64/32 270000h-27FFFFh 138000h-13FFFFh SA47 101000xxx 64/32 280000h-28FFFFh 140000h-147FFFh SA48 101001xxx 64/32 290000h-29FFFFh 148000h-14FFFFh SA49 101010xxx 64/32 2A0000h-2AFFFFh 150000h-157FFFh SA50 101011xxx 64/32 2B0000h-2BFFFFh 158000h-15FFFFh SA51 101100xxx 64/32 2C0000h-2CFFFFh 160000h-167FFFh SA52 101101xxx 64/32 2D0000h-2DFFFFh 168000h-16FFFFh SA53 101110xxx 64/32 2E0000h-2EFFFFh 170000h-177FFFh SA54 101111xxx 64/32 2F0000h-2FFFFFh 178000h-17FFFFh SA55 110000xxx 64/32 300000h-30FFFFh 180000h-187FFFh SA56 110001xxx 64/32 310000h-31FFFFh 188000h-18FFFFh SA57 110010xxx 64/32 320000h-32FFFFh 190000h-197FFFh SA58 110011xxx 64/32 330000h-33FFFFh 198000h-19FFFFh SA59 110100xxx 64/32 340000h-34FFFFh 1A0000h-1A7FFFh SA60 110101xxx 64/32 350000h-35FFFFh 1A8000h-1AFFFFh SA61 110110xxx 64/32 360000h-36FFFFh 1B0000h-1B7FFFh SA62 110111xxx 64/32 370000h-37FFFFh 1B8000h-1BFFFFh SA63 111000xxx 64/32 380000h-38FFFFh 1C0000h-1C7FFFh SA64 111001xxx 64/32 390000h-39FFFFh 1C8000h-1CFFFFh SA65 111010xxx 64/32 3A0000h-3AFFFFh 1D0000h-1D7FFFh SA66 111011xxx 64/32 3B0000h-3BFFFFh 1D8000h-1DFFFFh SA67 111100xxx 64/32 3C0000h-3CFFFFh 1E0000h-1E7FFFh SA68 111101xxx 64/32 3D0000h-3DFFFFh 1E8000h-1EFFFFh SA69 111110xxx 64/32 3E0000h-3EFFFFh 1F0000h-1F7FFFh SA70 111111xxx 64/32 3F0000h-3F1FFFh 1F8000h-1FFFFFh Document Number: 002-00857 Rev. *J Page 19 of 65 S29JL032J 8.9 Autoselect Mode The autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on DQ7–DQ0. This mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. However, the autoselect codes can also be accessed in-system through the command register. When using programming equipment, the autoselect mode requires VID on address pin A9. Address pins must be as shown in Table 5. In addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits. Table 5 shows the remaining address bits that are don’t care. When all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7–DQ0. However, the autoselect codes can also be accessed insystem through the command register, for instances when the S29JL032J is erased or programmed in a system without access to high voltage on the A9 pin. The command sequence is illustrated in Table 13 on page 35. Note that if a Bank Address (BA) on address bits A20, A19 and A18 is asserted during the third write cycle of the autoselect command, the host system can read autoselect data from that bank and then immediately read array data from another bank, without exiting the autoselect mode. To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 13 on page 35. This method does not require VID. Refer to Section 10.3 Autoselect Command Sequence on page 31 for more information. Table 5. S29JL032J Autoselect Codes (High Voltage Method) Description Device ID (Models 01, 02) Manufacturer ID: Cypress Products DQ15 to DQ8 CE# OE# WE# A20 to A12 A11 to A10 A9 A8 to A7 A6 A5 to A4 A3 A2 A1 A0 L L H BA X VID X L X L L L L BYTE# BYTE# = VIH = VIL X X DQ7 to DQ0 01h Read Cycle 1 L L L L H 22h 7Eh Read Cycle 2 L H H H L 22h 0Ah H H H H 22h L L H BA X VID X Read Cycle 3 X L X 00h (bottom boot) 01h (top boot) Device ID (Models 21, 22) L L H BA X VID X L X X X L H 22h X 56h (bottom boot) 55h (top boot) Device ID (Models 31, 32) L L H BA X VID X L X X X L H 22h X 53h (bottom boot) 50h (top boot) Device ID (Models 41, 42) L L H BA X VID X L X X X L H 22h X 5Fh (bottom boot) 5Ch (top boot) Sector Protection Verification L L H SA X VID X L X L L H L X X 01h (protected), 00h (unprotected) X 82h (Factory Locked), 42h (Customer Locked), 02h (Not Locked) Secured Silicon Indicator Bit (DQ6, DQ7) L L H BA X VID X L X L L H H X Legend L = Logic Low = VIL H = Logic High = VIH BA = Bank Address SA = Sector Address X = Don’t care. Document Number: 002-00857 Rev. *J Page 20 of 65 S29JL032J 8.10 Boot Sector/Sector Block Protection and Unprotection Note: For the following discussion, the term “sector” applies to both boot sectors and sector blocks. A sector block consists of two or more adjacent sectors that are protected or unprotected at the same time (see Table 6). The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected sectors. Sector protection/unprotection can be implemented via two methods. Table 6. S29JL032J Boot Sector/Sector Block Addresses for Protection/Unprotection (Top Boot Devices) Sector A20-A12 Sector/ Sector Block Size SA0 000000XXX 64 KB SA1-SA3 000001XXX 000010XXX 000011XXX 192 (3X64) KB SA4-SA7 0001XXXXX 256 (4X64) KB SA8-SA11 0010XXXXX 256 (4X64) KB SA12-SA15 0011XXXXX 256 (4X64) KB SA16-SA19 0100XXXXX 256 (4X64) KB SA20-SA23 0101XXXXX 256 (4X64) KB SA24-SA27 0110XXXXX 256 (4X64) KB SA28-SA31 0111XXXXX 256 (4X64) KB SA32-SA35 1000XXXXX 256 (4X64) KB SA36-SA39 1001XXXXX 256 (4X64) KB SA40-SA43 1010XXXXX 256 (4X64) KB SA44-SA47 1011XXXXX 256 (4X64) KB SA48-SA51 1100XXXXX 256 (4X64) KB SA52-SA55 1101XXXXX 256 (4X64) KB SA56-SA59 1110XXXXX 256 (4X64) KB SA60-SA62 111100XXX 111101XXX 111110XXX 192 (3X64) KB SA63 111111000 8 KB SA64 111111001 8 KB SA65 111111010 8 KB SA66 111111011 8 KB SA67 111111100 8 KB SA68 111111101 8 KB SA69 111111110 8 KB SA70 111111111 8 KB Document Number: 002-00857 Rev. *J Page 21 of 65 S29JL032J Table 7. S29JL032J Sector/Sector Block Addresses for Protection/Unprotection (Bottom Boot Devices) Sector A20-A12 Sector/ Sector Block Size SA70 111111XXX 64 KB SA69-SA67 111110XXX 111101XXX 111100XXX 192 (3X64) KB SA66-SA63 1110XXXXX 256 (4X64) KB SA62-SA59 1101XXXXX 256 (4X64) KB SA58-SA55 1100XXXXX 256 (4X64) KB SA54-SA51 1011XXXXX 256 (4X64) KB SA50-SA47 1010XXXXX 256 (4X64) KB SA46-SA43 1001XXXXX 256 (4X64) KB SA42-SA39 1000XXXXX 256 (4X64) KB SA38-SA35 0111XXXXX 256 (4X64) KB SA34-SA31 0110XXXXX 256 (4X64) KB SA30-SA27 0101XXXXX 256 (4X64) KB SA26-SA23 0100XXXXX 256 (4X64) KB SA22-SA19 0011XXXXX 256 (4X64) KB SA18-SA15 0010XXXXX 256 (4X64) KB SA14-SA11 0001XXXXX 256 (4X64) KB SA10-SA8 000011XXX 000010XXX 000001XXX 192 (3X64) KB SA7 000000111 8 KB SA6 000000110 8 KB SA5 000000101 8 KB SA4 000000100 8 KB SA3 000000011 8 KB SA2 000000010 8 KB SA1 000000001 8 KB SA0 000000000 8 KB Sector Protect/Sector Unprotect requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 on page 24 shows the algorithms and Figure 17.4 on page 56 shows the timing diagram. For sector unprotect, all unprotected sectors must first be protected prior to the first sector unprotect write cycle. Note that the sector unprotect algorithm unprotects all sectors in parallel. All previously protected sectors must be individually re-protected. To change data in protected sectors efficiently, the temporary sector unprotect function is available. See Section 8.12 Temporary Sector Unprotect on page 23. The device is shipped with all sectors unprotected. Optional Cypress programming service enable programming and protecting sectors at the factory prior to shipping the device. Contact your local sales office for details. It is possible to determine whether a sector is protected or unprotected. See Section 8.9 Autoselect Mode on page 20 for details. Document Number: 002-00857 Rev. *J Page 22 of 65 S29JL032J 8.11 Write Protect (WP#) The Write Protect function provides a hardware method of protecting certain boot sectors without using VID. This function is one of two provided by the WP#/ACC pin. If the system asserts VIL on the WP#/ACC pin, the device disables program and erase functions in the two outermost 8 KB boot sectors independently of whether those sectors were protected or unprotected using the method described in Section 8.10 Boot Sector/Sector Block Protection and Unprotection on page 21. The two outermost 8 KB boot sectors are the two sectors containing the lowest addresses in a bottom-boot-configured device, or the two sectors containing the highest addresses in a top-bootconfigured device. If the system asserts VIH on the WP#/ACC pin, the device reverts to whether the two outermost 8K Byte boot sectors were last set to be protected or unprotected. That is, sector protection or unprotection for these two sectors depends on whether they were last protected or unprotected using the method described in Section 8.10 Boot Sector/Sector Block Protection and Unprotection on page 21. Note that the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Table 8. WP#/ACC Modes WP# Input Voltage 8.12 Device Mode VIL Disables programming and erasing in the two outermost boot sectors VIH Enables programming and erasing in the two outermost boot sectors, dependent on whether they were last protected or unprotected VHH Enables accelerated programming (ACC). See Section 8.3.1 Accelerated Program Operation on page 13. Temporary Sector Unprotect Note: For the following discussion, the term “sector” applies to both sectors and sector blocks. A sector block consists of two or more adjacent sectors that are protected or unprotected at the same time (see Table 6 on page 21 and Table 7 on page 22). This feature allows temporary unprotection of previously protected sectors to change data in-system. The Temporary Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are protected again. Figure 1 on page 23 shows the algorithm, and Figure 17.3 on page 55 shows the timing diagrams, for this feature. If the WP#/ACC pin is at VIL, the two outermost boot sectors will remain protected during the Temporary sector Unprotect mode. Figure 1. Temporary Sector Unprotect Operation START RESET# = VID[5] Perform Erase or Program Operations RESET# = VIH Temporary Sector Unprotect Completed[6] Notes 5. All protected sectors unprotected (If WP#/ACC = VIL, the outermost two boot sectors will remain protected). 6. All previously protected sectors are protected once again. Document Number: 002-00857 Rev. *J Page 23 of 65 S29JL032J Figure 2. In-System Sector Protect/Unprotect Algorithms START START Protect all sectors: The indicated portion of the sector protect algorithm must be performed for all unprotected sectors prior to issuing the first sector unprotect address PLSCNT = 1 RESET# = VID Wait 1 ms Temporary Sector Unprotect Mode No PLSCNT = 1 RESET# = VID Wait 1 ms No First Write Cycle = 60h? First Write Cycle = 60h? Yes Yes Set up sector address No All sectors protected? Sector Protect: Write 60h to sector address with A6 = 0, A1 = 1, A0 = 0 Yes Set up first sector address Sector Unprotect: Write 60h to sector address with A6 = 1, A1 = 1, A0 = 0 Wait 150 µs Increment PLSCNT Temporary Sector Unprotect Mode Verify Sector Protect: Write 40h to sector address with A6 = 0, A1 = 1, A0 = 0 Reset PLSCNT = 1 Read from sector address with A6 = 0, A1 = 1, A0 = 0 Wait 15 ms Verify Sector Unprotect: Write 40h to sector address with A6 = 1, A1 = 1, A0 = 0 Increment PLSCNT No No PLSCNT = 25? Yes Yes No Yes Device failed Protect another sector? No PLSCNT = 1000? Yes Remove VID from RESET# Device failed Write reset command Sector Protect Algorithm Read from sector address with A6 = 1, A1 = 1, A0 = 0 Data = 01h? Sector Protect complete Set up next sector address No Data = 00h? Yes Last sector verified? No Yes Sector Unprotect Algorithm Remove VID from RESET# Write reset command Sector Unprotect complete Document Number: 002-00857 Rev. *J Page 24 of 65 S29JL032J 8.13 Secured Silicon Region The Secured Silicon Region feature provides a Flash memory region that enables permanent part identification through an Electronic Serial Number (ESN). The Secured Silicon Region is 256 bytes in length, and may shipped unprotected, allowing customers to utilize that sector in any manner they choose, or may shipped locked at the factory (upon customer request). The Secured Silicon Indicator Bit data will be 82h if factory locked, 42h if customer locked, or 02h if neither. Refer to Table 5 on page 20 for more details. The system accesses the Secured Silicon through a command sequence (see Section 10.4 Enter Secured Silicon Region/Exit Secured Silicon Region Command Sequence on page 31). After the system has written the Enter Secured Silicon Region command sequence, it may read the Secured Silicon Region by using the addresses normally occupied by the boot sectors. This mode of operation continues until the system issues the Exit Secured Silicon Region command sequence, or until power is removed from the device. On power-up, or following a hardware reset, the device reverts to sending commands to the first 256 bytes of Sector 0. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Region is enabled. 8.13.1 Factory Locked: Secured Silicon Region Programmed and Protected At the Factory In a factory locked device, the Secured Silicon Region is protected when the device is shipped from the factory. The Secured Silicon Region cannot be modified in any way. The device is preprogrammed with both a random number and a secure ESN. The 8-word random number is at addresses 000000h-000007h in word mode (or 000000h-00000Fh in byte mode). The secure ESN is programmed in the next 8 words at addresses 000008h-00000Fh (or 000010h-00001Fh in byte mode). The device is available preprogrammed with one of the following:  A random, secure ESN only  Customer code through Cypress programming services  Both a random, secure ESN and customer code through Cypress programming services Contact an your local sales office for details on using Cypress programming services. 8.13.2 Customer Lockable: Secured Silicon Region NOT Programmed or Protected At the Factory If the security feature is not required, the Secured Silicon Region can be treated as an additional Flash memory space. The Secured Silicon Region can be read any number of times, but can be programmed and locked only once. Note that the accelerated programming (ACC) and unlock bypass functions are not available when programming the Secured Silicon Region.  Write the three-cycle Enter Secured Silicon Region command sequence, and then follow the insystem sector protect algorithm as shown in Figure 2 on page 24, except that RESET# may be at either VIH or VID. This allows in-system protection of the Secured Silicon Region without raising any device pin to a high voltage. Note that this method is only applicable to the Secured Silicon Region.  To verify the protect/unprotect status of the Secured Silicon Region, follow the algorithm shown in Figure 3 on page 26. Once the Secured Silicon Region is locked and verified, the system must write the Exit Secured Silicon Region command sequence to return to reading and writing the remainder of the array. The Secured Silicon Region lock must be used with caution since, once locked, there is no procedure available for unlocking the Secured Silicon Region area and none of the bits in the Secured Silicon Region memory space can be modified in any way. Document Number: 002-00857 Rev. *J Page 25 of 65 S29JL032J Figure 3. Secured Silicon Region Protect Verify START RESET# = VIH or VID Wait 1 ms Write 60h to any address Write 40h to Secure Silicon Region address with A6 = 0, A1 = 1, A0 = 0 Read from Secure Silicon Region address with A6 = 0, A1 = 1, A0 = 0 8.14 If data = 00h, Secure Silicon Region is unprotected. If data = 01h, Secure Silicon Region is protected. Remove VIH or VID from RESET# Secured Silicon Region exit command Secure Silicon Region Protect Verify complete Hardware Data Protection The command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to Table 13 on page 35 for command definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during VCC power-up and power-down transitions, or from system noise. 8.14.1 Low VCC Write Inhibit When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all internal program/erase circuits are disabled, and the device resets to the read mode. Subsequent writes are ignored until VCC is greater than VLKO. The system must provide the proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO. 8.14.2 Write Pulse “Glitch” Protection Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write cycle. 8.14.3 Logical Inhibit Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a logical one. 8.14.4 Power-Up Write Inhibit If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to the read mode on power-up. Document Number: 002-00857 Rev. *J Page 26 of 65 S29JL032J 9. Common Flash Memory Interface (CFI) The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be deviceindependent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility. This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Table 9. To terminate reading CFI data, the system must write the reset command. The CFI Query mode is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. The system can also write the CFI query command when the device is in the autoselect mode via the command register only (high voltage method does not apply). The device enters the CFI query mode, and the system can read CFI data at the addresses given in Table 9. The system must write the reset command to return to reading array data. For further information, please refer to the CFI Specification and CFI Publication 100. Contact your local sales office for copies of these documents. Table 9. CFI Query Identification String Addresses (Word Mode) Addresses (Byte Mode) Data 10h 11h 12h 20h 22h 24h 0051h 0052h 0059h Query Unique ASCII string “QRY” 13h 14h 26h 28h 0002h 0000h Primary OEM Command Set 15h 16h 2Ah 2Ch 0040h 0000h Address for Primary Extended Table 17h 18h 2Eh 30h 0000h 0000h Alternate OEM Command Set (00h = none exists) 19h 1Ah 32h 34h 0000h 0000h Address for Alternate OEM Extended Table (00h = none exists) Description Table 10. System Interface String Addresses (Word Mode) Addresses (Byte Mode) Data 1Bh 36h 0027h VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Ch 38h 0036h VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 millivolt 1Dh 3Ah 0000h VPP Min. voltage (00h = no VPP pin present) 1Eh 3Ch 0000h VPP Max. voltage (00h = no VPP pin present) 1Fh 3Eh 0003h Typical timeout per single byte/word write 2N µs 20h 40h 0000h Typical timeout for Min. size buffer write 2N µs (00h = not supported) 21h 42h 0009h Typical timeout per individual block erase 2N ms 22h 44h 000Fh Typical timeout for full chip erase 2N ms (00h = not supported) 23h 46h 0004h Max. timeout for byte/word write 2N times typical 24h 48h 0000h Max. timeout for buffer write 2N times typical 25h 4Ah 0004h Max. timeout per individual block erase 2N times typical 26h 4Ch 0000h Max. timeout for full chip erase 2N times typical (00h = not supported) Document Number: 002-00857 Rev. *J Description Page 27 of 65 S29JL032J Table 11. Device Geometry Definition Addresses (Word Mode) Addresses (Byte Mode) Data 27h 4Eh 0016h Device Size = 2N byte 28h 29h 50h 52h 0002h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 54h 56h 0000h 0000h Max. number of byte in multi-byte write = 2N (00h = not supported) Description 2Ch 58h 0002h Number of Erase Block Regions within device 2Dh 2Eh 2Fh 30h 5Ah 5Ch 5Eh 60h 0007h 0000h 0020h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 62h 64h 66h 68h 003Eh 0000h 0000h 0001h Erase Block Region 2 Information (refer to the CFI specification or CFI publication 100) 35h 36h 37h 38h 6Ah 6Ch 6Eh 70h 0000h 0000h 0000h 0000h Erase Block Region 3 Information (refer to the CFI specification or CFI publication 100) 39h 3Ah 3Bh 3Ch 72h 74h 76h 78h 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to the CFI specification or CFI publication 100) Table 12. Primary Vendor-Specific Extended Query Addresses (Word Mode) Addresses (Byte Mode) Data 40h 41h 42h 80h 82h 84h 0050h 0052h 0049h Query-unique ASCII string “PRI” 43h 86h 0031h Major version number, ASCII (reflects modifications to the silicon) 44h 88h 0033h Minor version number, ASCII (reflects modifications to the CFI table) Description 45h 8Ah 000Ch Address Sensitive Unlock (Bits 1-0) 0 = Required, 1 = Not Required Process Technology (Bits 7-2) 0011 = 0.11 µm Floating Gate 46h 8Ch 0002h Erase Suspend 0 = Not Supported, 1 = To Read Only, 2 = To Read & Write 47h 8Eh 0001h Sector Protect 0 = Not Supported, X = Number of sectors in per group 48h 90h 0001h Sector Temporary Unprotect 00 = Not Supported, 01 = Supported 49h 92h 0004h Sector Protect/Unprotect scheme 01 = 29F040 mode, 02 = 29F016 mode, 03 = 29F400, 04 = 29LV800 mode Number of sectors (excluding Bank 1) 4Ah 94h 00XXh XX = 38 (models 01, 02, 21, 22) XX = 30 (models 31, 32) XX = 20 (models 41, 42) 4Bh 96h Document Number: 002-00857 Rev. *J 0000h Burst Mode Type 00 = Not Supported, 01 = Supported Page 28 of 65 S29JL032J Table 12. Primary Vendor-Specific Extended Query (Continued) Addresses (Word Mode) Addresses (Byte Mode) Data 4Ch 98h 0000h 4Dh 9Ah 0085h 4Eh 9Ch 0095h 4Fh 9Eh 000Xh 50h A0h 0000h Description Page Mode Type 00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page ACC (Acceleration) Supply Minimum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV ACC (Acceleration) Supply Maximum 00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV Top/Bottom Boot Sector Flag 02h = Bottom Boot Device, 03h = Top Boot Device Program Suspend 0 = Not supported, 1 = Supported Bank Organization 57h AEh 000Xh 00 = Data at 4Ah is zero X = 4 (4 banks, models 01, 02) X = 2 (2 banks, all other models) Bank 1 Region Information - Number of sectors on Bank 1 58h B0h 00XXh XX = 0F (models 01, 02, 21, 22) XX = 17 (models 31, 32) XX = 27 (models 41, 42) Bank 2 Region Information - Number of sectors in Bank 2 XX = 18 (models 01, 02) 59h B2h 00XXh XX = 38 (models 21, 22) XX = 30 (models 31, 32) XX = 20 (models 41, 42) Bank 3 Region Information - Number of sectors in Bank 3 5Ah B4h 00XXh XX = 18 (models 01, 02) XX = 00 (all other models) Bank 4 Region Information - Number of sectors in Bank 4 5Bh B6h 00XXh XX = 08 (models 01, 02) XX = 00 (all other models) Document Number: 002-00857 Rev. *J Page 29 of 65 S29JL032J 10. Command Definitions Writing specific address and data sequences into the command register initiates device operations. Table 13 on page 35 defines the valid register command sequences. Writing incorrect address and data values or writing them in the improper sequence may place the device in an unknown state. A hardware reset may be required to return the device to reading array data. All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is latched on the rising edge of WE# or CE#, whichever happens first. Refer to Section 17. AC Characteristics on page 48 for timing diagrams. 10.1 Reading Array Data The device is automatically set to reading array data after device power-up. No commands are required to retrieve data. Each bank is ready to read array data after completing an Embedded Program or Embedded Erase algorithm. After the device accepts an Erase Suspend command, the corresponding bank enters the erase-suspend-read mode, after which the system can read data from any non-erase-suspended sector within the same bank. The system can read array data using the standard read timing, except that if it reads at an address within erase-suspended sectors, the device outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception. See Section 10.8 Erase Suspend/Erase Resume Commands on page 35 for more information. The system must issue the reset command to return a bank to the read (or erase-suspend-read) mode if DQ5 goes high during an active program or erase operation, or if the bank is in the autoselect mode. See Section 10.2 Reset Command on page 30, for more information. See also Section 8.2 Requirements for Reading Array Data on page 13 for more information. Section 17.1 Read-Only Operations on page 48 provides the read parameters, and Figure 12 on page 48 shows the timing diagram. 10.2 Reset Command Writing the reset command resets the banks to the read or erase-suspend-read mode. The reset command may be written between the sequence cycles in an erase command sequence before erasing begins. This resets the bank to which the system was writing to the read mode. Once erasure begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the bank to which the system was writing to the read mode. If the program command sequence is written to a bank that is in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. Once programming begins, however, the device ignores reset commands until the operation is complete. The reset command may be written between the sequence cycles in an autoselect command sequence. Once in the autoselect mode, the reset command must be written to return to the read mode. If a bank entered the autoselect mode while in the Erase Suspend mode, writing the reset command returns that bank to the erase-suspend-read mode. If DQ5 goes high during a program or erase operation, writing the reset command returns the bank to the read mode (or erasesuspend-read mode if that bank was in Erase Suspend). Please note that the RY/BY# signal remains low until this reset is issued. Document Number: 002-00857 Rev. *J Page 30 of 65 S29JL032J 10.3 Autoselect Command Sequence The autoselect command sequence allows the host system to access the manufacturer and device codes, and determine whether or not a sector is protected. The autoselect command sequence may be written to an address within a bank that is either in the read or erase-suspend-read mode. The autoselect command may not be written while the device is actively programming or erasing in another bank. The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle that contains the bank address and the autoselect command. The bank then enters the autoselect mode. The system may read any number of autoselect codes without reinitiating the command sequence. Table 13 on page 35 shows the address and data requirements. To determine sector protection information, the system must write to the appropriate bank address (BA) and sector address (SA). Table 3 on page 16 and Table 4 on page 18 show the address range and bank number associated with each sector. The system must write the reset command to return to the read mode (or erase-suspend-read mode if the bank was previously in Erase Suspend). 10.4 Enter Secured Silicon Region/Exit Secured Silicon Region Command Sequence The system can access the Secured Silicon Region region by issuing the three-cycle Enter Secured Silicon Region command sequence. The device continues to access the Secured Silicon Region until the system issues the four-cycle Exit Secured Silicon Region command sequence. The Exit Secured Silicon Region command sequence returns the device to normal operation. The Secured Silicon Region is not accessible when the device is executing an Embedded Program or embedded Erase algorithm. Table 13 on page 35 shows the address and data requirements for both command sequences. See also Section 8.13 Secured Silicon Region on page 25 for further information. Note that the ACC function and unlock bypass modes are not available when the Secured Silicon Region is enabled. 10.5 Byte/Word Program Command Sequence The system may program the device by word or byte, depending on the state of the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. The program address and data are written next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further controls or timings. The device automatically provides internally generated program pulses and verifies the programmed cell margin. Table 13 on page 35 shows the address and data requirements for the byte program command sequence. When the Embedded Program algorithm is complete, that bank then returns to the read mode and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. Refer to Section 11. Write Operation Status on page 37 for information on these status bits. Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a hardware reset immediately terminates the program operation. The program command sequence should be reinitiated once that bank has returned to the read mode, to ensure data integrity. Note that the Secured Silicon Region, autoselect, and CFI functions are unavailable when a program operation is in progress. Programming is allowed in any sequence and across sector boundaries. A bit cannot be programmed from “0” back to a “1.” Attempting to do so may cause that bank to set DQ5 = 1, or cause the DQ7 and DQ6 status bits to indicate the operation was successful. However, a succeeding read will show that the data is still “0.” Only erase operations can convert a “0” to a “1.” Document Number: 002-00857 Rev. *J Page 31 of 65 S29JL032J 10.5.1 Unlock Bypass Command Sequence The unlock bypass feature allows the system to program bytes or words to a bank faster than using the standard program command sequence. The unlock bypass command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. That bank then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is required to program in this mode. The first cycle in this sequence contains the unlock bypass program command, A0h; the second cycle contains the program address and data. Additional data is programmed in the same manner. This mode dispenses with the initial two unlock cycles required in the standard program command sequence, resulting in faster total programming time. Table 13 on page 35 shows the requirements for the command sequence. During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system must issue the two-cycle unlock bypass reset command sequence (see Table 13). The device offers accelerated program operations through the WP#/ACC pin. When the system asserts VHH on the WP#/ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at VHH for any operation other than accelerated programming, or device damage may result. In addition, the WP#/ ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Figure 4 illustrates the algorithm for the program operation. Refer to Section 17.4 Erase and Program Operations on page 51 for parameters, and Figure 14 for timing diagrams. Figure 4. Program Operation START Write Program Command Sequence Data Poll from System Embedded Program algorithm in progress Verify Data? No Yes Increment Address No Last Address? Yes Programming Completed Note 7. See Table 13 on page 35 for program command sequence. Document Number: 002-00857 Rev. *J Page 32 of 65 S29JL032J 10.6 Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 13 on page 35 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to Section 11. Write Operation Status on page 37 for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Note that the Secured Silicon Region, autoselect, and CFI functions are unavailable when an erase operation is in progress. Figure 5 on page 34 illustrates the algorithm for the erase operation. Refer to Section 17.4 Erase and Program Operations on page 51 for parameters, and Figure 16 on page 53 for timing diagrams. 10.7 Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock cycles are written, and are then followed by the address of the sector to be erased, and the sector erase command. Table 13 on page 35 shows the address and data requirements for the sector erase command sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm automatically programs and verifies the entire sector for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or timings during these operations. After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector addresses and sector erase commands may be written. However, these additional erase commands are only one bus cycle long and should be identical to the sixth cycle of the standard erase command explained above. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these additional cycles must be less than 50 µs, otherwise erasure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor interrupts be disabled during this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. If any command other than 30h, B0h, F0h is input during the time-out period, the normal operation will not be guaranteed. The system must rewrite the command sequence and any additional addresses and commands. The system can monitor DQ3 to determine if the sector erase timer has timed out (See Section 11.7 DQ3: Sector Erase Timer on page 42.). The time-out begins from the rising edge of the final WE# or CE# pulse (first rising edge) in the command sequence. When the Embedded Erase algorithm is complete, the bank returns to reading array data and addresses are no longer latched. Note that while the Embedded Erase operation is in progress, the system can read data from the non-erasing bank. The system can determine the status of the erase operation by reading DQ7, DQ6, DQ2, or RY/BY# in the erasing bank. Refer to Section 11. Write Operation Status on page 37 for information on these status bits. Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs, the sector erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Note that the Secured Silicon Region, autoselect, and CFI functions are unavailable when an erase operation is in progress. Figure 5 on page 34 illustrates the algorithm for the erase operation. Refer to Section 17.4 Erase and Program Operations on page 51 for parameters, and Figure 16 on page 53 for timing diagrams. Document Number: 002-00857 Rev. *J Page 33 of 65 S29JL032J Figure 5. Erase Operation START Write Erase Command Sequence (Notes 1, 2) Data Poll to Erasing Bank from System No Embedded Erase algorithm in progress Data = FFh? Yes Erasure Completed Notes 8. See Table 13 on page 35 for erase command sequence. 9. See Section 11.7 DQ3: Sector Erase Timer on page 42 for information on the sector erase timer. Document Number: 002-00857 Rev. *J Page 34 of 65 S29JL032J 10.8 Erase Suspend/Erase Resume Commands The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. The bank address is required when writing this command. This command is valid only during the sector erase operation, including the 50 µs time-out period during the sector erase command sequence. The Erase Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. The bank address must contain one of the sectors currently selected for erase. When the Erase Suspend command is written during the sector erase operation, the device requires a maximum of 35 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately terminates the time-out period and suspends the erase operation. After the erase operation has been suspended, the bank enters the erase-suspend-read mode. The system can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all sectors selected for erasure.) It is not recommended to program the Secured Silicon Region after an erase suspend, as proper device functionality cannot be guaranteed. Reading at any address within erase-suspended sectors produces status information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. Refer to Section 11. Write Operation Status on page 37 for information on these status bits. After an erase-suspended program operation is complete, the bank returns to the erase-suspend-read mode. The system can determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard Byte Program operation. Refer to Section 11. Write Operation Status on page 37 for more information. In the erase-suspend-read mode, the system can also issue the autoselect command sequence. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the Erase Suspend mode, and is ready for another valid operation. Refer to Section 8.9 Autoselect Mode on page 20 and Section 10.3 Autoselect Command Sequence on page 31 for details. To resume the sector erase operation, the system must write the Erase Resume command. The bank address of the erasesuspended bank is required when writing this command. Further writes of the Resume command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing. Command Sequence Read [10] [15] Reset [16] Word Autoselect [17] Manufacturer ID Device ID Byte Word [18] Byte Secured Silicon Region [10] Factory Protect Word Boot Sector/Sector [10] Block Protect Verify Word Enter Secured Silicon Region Exit Secured Silicon Region Byte Word Byte Word Byte Word Program Byte Word Unlock Bypass Byte Unlock Bypass Program Unlock Bypass Reset Byte [21] [22] Cycles Table 13. S29JL032J Command Definitions Bus Cycles (Notes 11–14) First Second Addr Data 1 RA RD 1 XXX F0 4 6 4 4 3 4 4 3 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA 555 AAA AA AA AA AA AA AA AA AA Addr 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 2AA 555 Data 55 55 55 55 55 55 55 55 2 XXX A0 PA PD 2 XXX 90 XXX 00 Document Number: 002-00857 Rev. *J Third Addr (BA)555 (BA)AAA (BA)555 (BA)AAA (BA)555 (BA)AAA (BA)555 (BA)AAA 555 AAA 555 AAA 555 AAA 555 AAA Fourth Fifth Data Addr Data 90 (BA)X00 01 (BA)X01 See Table 5 90 90 90 (BA)X02 (BA)X03 (BA)X06 (SA)X02 (SA)X04 Sixth Addr Data Addr Data (BA)X0E See Table 5 (BA)X0F (BA)X1E See Table 5 (BA)X1C 82/02 00/01 88 90 XXX 00 A0 PA PD 20 Page 35 of 65 S29JL032J Command Sequence Word Chip Erase Sector Erase Byte [26] Erase Resume [25] Word Byte 6 6 Bus Cycles (Notes 11–14) First Addr 555 AAA 555 AAA Second Data AA AA [23] 1 BA B0 [24] 1 BA 30 Erase Suspend CFI Query [10] Cycles Table 13. S29JL032J Command Definitions (Continued) Word Byte 1 55 AA Addr 2AA 555 2AA 555 Data 55 55 Third Addr 555 AAA 555 AAA Fourth Data 80 80 Addr 555 AAA 555 AAA Fifth Data AA AA Addr 2AA 555 2AA 555 Sixth Data 55 55 Addr 555 AAA SA Data 10 30 98 Legend: X = Don’t care RA = Address of the memory location to be read. RD = Data read from location RA during read operation. PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever happens later. PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first. SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A20–A12 uniquely select any sector. Refer to Table 3 on page 16 and Table 4 on page 18 for information on sector addresses. BA = Address of the bank that is being switched to autoselect mode, is in bypass mode, or is being erased. A20–A18 uniquely select a bank. Notes 10. See Table 1 on page 12 for description of bus operations. 11. All values are in hexadecimal. 12. Except for the read cycle and the fourth, fifth, and sixth cycle of the autoselect command sequence, all bus cycles are write cycles. 13. Data bits DQ15–DQ8 are don’t care in command sequences, except for RD and PD. 14. Unless otherwise noted, address bits A20–A11 are don’t cares for unlock and command cycles, unless SA or PA is required. 15. No unlock or command cycles required when bank is reading array data. 16. The Reset command is required to return to the read mode (or to the erase-suspend-read mode if previously in Erase Suspend) when a bank is in the autoselect mode, or if DQ5 goes high (while the bank is providing status information). 17. The fourth cycle of the autoselect command sequence is a read cycle. The system must provide the bank address to obtain the manufacturer ID, device ID, or Secured Silicon Region factory protect information. Data bits DQ15–DQ8 are don’t care. While reading the autoselect addresses, the bank address must be the same until a reset command is given. See Section 10.3 Autoselect Command Sequence on page 31 for more information. 18. For models 01, 02, the device ID must be read across the fourth, fifth, and sixth cycles. 19. The data is 82h for factory locked, 42h for customer locked, and 02h for not factory/customer locked. 20. The data is 00h for an unprotected sector/sector block and 01h for a protected sector/sector block. 21. The Unlock Bypass command is required prior to the Unlock Bypass Program command. 22. The Unlock Bypass Reset command is required to return to the read mode when the bank is in the unlock bypass mode. 23. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid only during a sector erase operation, and requires the bank address. 24. The Erase Resume command is valid only during the Erase Suspend mode, and requires the bank address. 25. Command is valid when device is ready to read array data or when device is in autoselect mode. 26. Additional sector erase commands during the time-out period after an initial sector erase are one cycle long and identical to the sixth cycle of the sector erase command sequence (SA / 30). Document Number: 002-00857 Rev. *J Page 36 of 65 S29JL032J 11. Write Operation Status The device provides several bits to determine the status of a program or erase operation: DQ2, DQ3, DQ5, DQ6, and DQ7. Table 14 on page 42 and the following subsections describe the function of these bits. DQ7 and DQ6 each offer a method for determining whether a program or erase operation is complete or in progress. The device also provides a hardware-based output signal, RY/ BY#, to determine whether an Embedded Program or Erase operation is in progress or has been completed. 11.1 DQ7: Data# Polling The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Program or Erase algorithm is in progress or completed, or whether a bank is in Erase Suspend. Data# Polling is valid after the rising edge of the final WE# pulse in the command sequence. During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the Embedded Program algorithm is complete, the device outputs the datum programmed to DQ7. The system must provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for approximately 1 µs, then that bank returns to the read mode. During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the bank enters the Erase Suspend mode, Data# Polling produces a “1” on DQ7. The system must provide an address within any of the sectors selected for erasure to read valid status information on DQ7. After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 3 ms, then the bank returns to the read mode. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. However, if the system reads DQ7 at an address within a protected sector, the status may not be valid. When the system detects DQ7 has changed from the complement to true data, it can read valid data at DQ15–DQ0 (or DQ7–DQ0 for x8-only device) on the following read cycles. Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ15–DQ8 (DQ7–DQ0 for x8-only device) while Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7. Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the program or erase operation and DQ7 has valid data, the data outputs on DQ15–DQ0 may be still invalid. Valid data on DQ15–DQ0 (or DQ7–DQ0 for x8-only device) will appear on successive read cycles. Table 14 shows the outputs for Data# Polling on DQ7. Figure 6 on page 38 shows the Data# Polling algorithm. Figure 18 on page 54 shows the Data# Polling timing diagram. Document Number: 002-00857 Rev. *J Page 37 of 65 S29JL032J Figure 6. Data# Polling Algorithm[27, 28] 34!24 2EADå$1n$1 !DDRåå6! $1åå$ATA 9ES .O .O $1åå 9ES 2EADå$1n$1 !DDRåå6! $1åå$ATA 9ES .O &!), 0!33 Notes 27. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being erased. During chip erase, a valid address is any non-protected sector address. 28. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Document Number: 002-00857 Rev. *J Page 38 of 65 S29JL032J 11.2 RY/BY#: Ready/Busy# The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a pull-up resistor to VCC. If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or one of the banks is in the erase-suspend-read mode. Table 14 on page 42 shows the outputs for RY/BY#. When DQ5 is set to “1”, RY/BY# will be in the BUSY state, or “0”. 11.3 DQ6: Toggle Bit I Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final WE# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. The system may use either OE# or CE# to control the read cycles. When the operation is complete, DQ6 stops toggling. After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for approximately 3 ms, then returns to reading array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must also use DQ2 to determine which sectors are erasing or erasesuspended. Alternatively, the system can use DQ7 (see Section 11.1 DQ7: Data# Polling on page 37). If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to reading array data. DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program algorithm is complete. Document Number: 002-00857 Rev. *J Page 39 of 65 S29JL032J Figure 7. Toggle Bit Algorithm[29] START Read Byte (DQ7–DQ0) Address =VA Read Byte (DQ7–DQ0) Address =VA Toggle Bit = Toggle? No Yes No DQ5 = 1? Yes Read Byte Twice (DQ7–DQ0) Address = VA Toggle Bit = Toggle? No Yes Program/Erase Operation Not Complete, Write Reset Command 11.4 Program/Erase Operation Complete DQ2: Toggle Bit II The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system reads at addresses within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or is erasesuspended. DQ6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to Table 14 on page 42 to compare outputs for DQ2 and DQ6. Figure 7 on page 40 shows the toggle bit algorithm in flowchart form, and Section 11.4 DQ2: Toggle Bit II on page 40 explains the algorithm. See also Section 11.3 DQ6: Toggle Bit I on page 39. Figure 19 on page 54 shows the toggle bit timing diagram. Figure 20 on page 55 shows the differences between DQ2 and DQ6 in graphical form. Note 29. The system should recheck the toggle bit even if DQ5 = “1” because the toggle bit may stop toggling as DQ5 changes to “1.” See the subsections on DQ6 and DQ2 for more information. Document Number: 002-00857 Rev. *J Page 40 of 65 S29JL032J 11.5 Reading Toggle Bits DQ6/DQ2 Refer to Figure 7 on page 40 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ15–DQ0 (or DQ7–DQ0 for x8-only device) at least twice in a row to determine whether a toggle bit is toggling. Typically, the system would note and store the value of the toggle bit after the first read. After the second read, the system would compare the new value of the toggle bit with the first. If the toggle bit is not toggling, the device has completed the program or erase operation. The system can read array data on DQ15–DQ0 (or DQ7–DQ0 for x8-only device) on the following read cycle. However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5). If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the device did not completed the operation successfully, and the system must write the reset command to return to reading array data. The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not gone high. The system may continue to monitor the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 7). 11.6 DQ5: Exceeded Timing Limits DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1,” indicating that the program or erase cycle was not successfully completed. The device may output a “1” on DQ5 if the system tries to program a “1” to a location that was previously programmed to “0.” Only an erase operation can change a “0” back to a “1.” Under this condition, the device halts the operation, and when the timing limit has been exceeded, DQ5 produces a “1.” The RDY/BSY# pin will be in the BUSY state under this condition. Under both these conditions, the system must write the reset command to return to the read mode (or to the erase-suspend-read mode if a bank was previously in the erase-suspend-program mode). Document Number: 002-00857 Rev. *J Page 41 of 65 S29JL032J 11.7 DQ3: Sector Erase Timer After writing a sector erase command sequence, the system may read DQ3 to determine whether or not erasure has begun. (The sector erase timer does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire time-out also applies after each additional sector erase command. When the time-out period is complete, DQ3 switches from a “0” to a “1.” If the time between additional sector erase commands from the system can be assumed to be less than 50 µs, the system need not monitor DQ3. See also Section 10.7 Sector Erase Command Sequence on page 33. After the sector erase command is written, the system should read the status of DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence, and then read DQ3. If DQ3 is “1,” the Embedded Erase algorithm has begun; all further commands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0,” the device will accept additional sector erase commands. To ensure the command has been accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second status check, the last command might not have been accepted. Table 14 shows the status of DQ3 relative to the other status bits. Table 14. Write Operation Status DQ7[31] DQ6 DQ5[30] DQ3 DQ2[31] RY/BY# DQ7# Toggle 0 N/A No toggle 0 0 Toggle 0 1 Toggle 0 0 Toggle 0 1 No toggle 0 Erase Suspended Sector 1 No toggle 0 N/A Toggle 1 Non-Erase Suspended Sector Data Data Data Data Data 1 DQ7# Toggle 0 N/A N/A 0 Status Embedded Program Algorithm Standard Mode Erase Suspend Mode In busy erasing Embedded Erase sector Algorithm In not busy erasing sector Erase-SuspendRead Erase-Suspend-Program Notes 30. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits. Refer to the section on DQ5 for more information. 31. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details. 32. When reading write operation status bits, the system must always provide the bank address where the Embedded Algorithm is in progress. The device outputs array data if the system addresses a non-busy bank. Document Number: 002-00857 Rev. *J Page 42 of 65 S29JL032J 12. Absolute Maximum Ratings Storage Temperature, Plastic Packages –65°C to +150°C Ambient Temperature with Power Applied –65°C to +125°C Voltage with Respect to Ground, VCC[33] –0.5V to +4.0V A9 and RESET#[34] –0.5V to +12.5V WP#/ACC –0.5V to +9.5V All other pins[33] –0.5V to VCC +0.5V Output Short Circuit Curren[35] 200 mA Notes 33. Minimum DC voltage on input or I/O pins is –0.5V. During voltage transitions, input or I/O pins may overshoot VSS to –2.0V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCC +0.5V. See Figure 8 on page 43. During voltage transitions, input or I/O pins may overshoot to VCC +2.0V for periods up to 20 ns. See Figure 9 on page 43. 34. Minimum DC input voltage on pins A9, OE#, RESET#, and WP#/ACC is –0.5V. During voltage transitions, A9, OE#, WP#/ACC, and RESET# may overshoot VSS to – 2.0V for periods of up to 20 ns. See Figure 8 on page 43. Maximum DC input voltage on pin A9 is +12.5V which may overshoot to +14.0V for periods up to 20 ns. Maximum DC input voltage on WP#/ACC is +9.5V which may overshoot to +12.0V for periods up to 20 ns. 35. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 36. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. Figure 8. Maximum Negative Overshoot Waveform 20 ns 20 ns +0.8V –0.5V –2.0V 20 ns Figure 9. Maximum Positive Overshoot Waveform 20 ns VCC +2.0V VCC +0.5V 2.0V 20 ns Document Number: 002-00857 Rev. *J 20 ns Page 43 of 65 S29JL032J 13. Operating Ranges Industrial (I) Devices Ambient Temperature (TA) –40°C to +85°C Automotive (A) Devices Ambient Temperature (TA) –40°C to +85°C VCC Supply Voltages VCC for standard voltage range 2.7V to 3.6V Operating ranges define those limits between which the functionality of the device is guaranteed. 14. DC Characteristics 14.1 Parameter Symbol CMOS Compatible Parameter Description Test Conditions Min Typ Max Unit 1.0 µA ILI Input Load Current VIN = VSS to VCC, VCC = VCC max ILIT A9 and RESET# Input Load Current VCC = VCC max, OE# = VIH; A9 or RESET# = 12.5V 35 µA ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC max, OE# = VIH 1.0 µA ILR Reset Leakage Current VCC = VCC max; RESET# = 12.5V 35 µA [14.2, 38] ICC1 VCC Active Read Current ICC2 VCC Active Write Current [38, 39] CE# = VIL, OE# = VIH, Byte Mode 5 MHz 10 1 MHz 2 4 CE# = VIL, OE# = VIH, 5 MHz 10 16 Word Mode 1 MHz CE# = VIL, OE# = VIH, WE# = VIL [38] ICC3 VCC Standby Current ICC4 VCC Reset Current ICC5 Automatic Sleep Mode ICC6 VCC Active Read-While-Program Current ICC7 VCC Active Read-While-Erase Current ICC8 VCC Active Program-While-Erase-Suspended [38, 41] Current [38] [38, 40] [38] [38] 16 2 4 15 30 mA mA CE#, RESET# = VCC 0.3V 0.2 5 µA RESET# = VSS 0.3V 0.2 5 µA VIH = VCC  0.3V; VIL = VSS 0.3V 0.2 5 µA Byte 21 45 Word 21 45 CE# = VIL, OE# = VIH, 1 MHz CE# = VIL, OE# = VIH, Byte 21 45 1 MHz Word 21 45 17 35 CE# = VIL, OE# = VIH mA mA mA VIL Input Low Voltage –0.5 0.8 V VIH Input High Voltage 0.7 x VCC VCC + 0.3 V VHH Voltage for WP#/ACC Sector Protect/Unprotect and Program Acceleration VCC = 3.0V ± 10% 8.5 9.5 V VID Voltage for Autoselect and Temporary Sector Unprotect VCC = 3.0V  10% 8.5 12.5 V VOL Output Low Voltage 0.45 V IOL = 2.0 mA, VCC = VCC min Notes 37. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 38. Maximum ICC specifications are tested with VCC = VCCmax. 39. ICC active while Embedded Erase or Embedded Program is in progress. 40. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. 41. Not 100% tested. Document Number: 002-00857 Rev. *J Page 44 of 65 S29JL032J Parameter Symbol VOH1 VOH2 VLKO Parameter Description Test Conditions Output High Voltage Low VCC Lock-Out Voltage Min IOH = –2.0 mA, VCC = VCC min 0.85 x VCC IOH = –100 µA, VCC = VCC min VCC–0.4 [41] 1.8 Typ Max Unit V 2.0 2.5 V Notes 37. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. 38. Maximum ICC specifications are tested with VCC = VCCmax. 39. ICC active while Embedded Erase or Embedded Program is in progress. 40. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA. 41. Not 100% tested. 14.2 Zero-Power Flash Figure 10. ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)[42] Supply Current in mA 25 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 3500 4000 Time in ns Note 42. Addresses are switching at 1 MHz. Document Number: 002-00857 Rev. *J Page 45 of 65 S29JL032J Figure 11. Typical ICC1 vs. Frequency[43] 12 3.6V 10 2.7V Supply Current in mA 8 6 4 2 0 1 2 3 4 5 Frequency in MHz Note 43. T = 25°C Document Number: 002-00857 Rev. *J Page 46 of 65 S29JL032J 15. Test Conditions Figure 15.1 Test Setup[44] Device Under Test CL Table 15. Test Specifications Test Condition 60 30 Output Load Capacitance, CL Input Rise and Fall Times[44] 70 Unit 100 pF 5 ns 0.0 or Vcc V Input timing measurement reference levels 0.5 Vcc V Output timing measurement reference levels 0.5 Vcc V Input Pulse Levels Note 45. Input rise and fall times are 0-100%. 16. Key To Switching Waveforms Waveform Inputs Outputs Steady Changing from H to L Changing from L to H Don’t Care, Any Change Permitted Changing, State Unknown Does Not Apply Center Line is High Impedance State (High-Z) Figure 16.1 Input Waveforms and Measurement Levels Vcc Input 0.5 Vcc Measurement Level 0.5 Vcc Output 0.0 V Note 44. Diodes are IN3064 or equivalent. Document Number: 002-00857 Rev. *J Page 47 of 65 S29JL032J 17. AC Characteristics 17.1 Read-Only Operations Parameter JEDEC Description Std. Speed Options Test Setup [46] 60 70 Unit Min 60 70 ns tAVAV tRC Read Cycle Time tAVQV tACC Address to Output Delay CE#, OE# = VIL Max 60 70 ns tELQV tCE Chip Enable to Output Delay OE# = VIL Max 60 70 ns tGLQV tOE Output Enable to Output Delay Max 25 tEHQZ tDF Chip Enable to Output High-Z[46, 48] Max 16 ns tGHQZ tDF Output Enable to Output High-Z[46, 48] Max 16 ns tAXQX tOH Output Hold Time From Addresses, CE# or OE#, Whichever Occurs First Min 0 ns Read Min 0 ns tOEH Output Enable Hold Time[46] Toggle and Data# Polling Min 30 5 10 ns ns Notes 46. Not 100% tested. 47. See Figure 15.1 on page 47 and Table 15 on page 47 for test specifications 48. Measurements performed by placing a 50 ohm termination on the data pin with a bias of VCC/2. The time from OE# high to the data bus driven to VCC/2 is taken as tDF. Figure 12. Read Operation Timings tRC Addresses Stable Addresses tACC CE# tRH tRH tDF tOE OE# tOEH WE# tCE tOH HIGH-Z HIGH-Z Output Valid Outputs RESET# RY/BY# 0V Document Number: 002-00857 Rev. *J Page 48 of 65 S29JL032J 17.2 Hardware Reset (RESET#) Parameter JEDEC Std Description All Speed Options Unit tReady RESET# Pin Low (During Embedded Algorithms) to Read Mode[49] Max 35 µs tReady RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode[49] Max 500 ns tRP RESET# Pulse Width Min 500 ns tRH Reset High Time Before Read[49] Min 50 ns tRPD RESET# Low to Standby Mode Min 35 µs tRB RY/BY# Recovery Time Min 0 ns Note 49. Not 100% tested. Figure 13. Reset Timings RY/BY# CE#, OE# tRH RESET# tRP tReady Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms tReady RY/BY# tRB CE#, OE# RESET# tRP Document Number: 002-00857 Rev. *J Page 49 of 65 S29JL032J 17.3 Word/Byte Configuration (BYTE#) Parameter JEDEC Speed Options Std. Description tELFL/tELFH 60 70 Unit CE# to BYTE# Switching Low or High Max 5 ns tFLQZ BYTE# Switching Low to Output HIGH-Z Max 16 ns tFHQV BYTE# Switching High to Output Active Max 60 70 ns Figure 17.1 BYTE# Timings for Read Operations CE# OE# BYTE# BYTE# Switching from word to byte mode tELFL Data Output (DQ14–DQ0) DQ14–DQ0 Data Output (DQ7–DQ0) Address Input DQ15 Output DQ15/A-1 tFLQZ tELFH BYTE# BYTE# Switching from byte to word mode DQ14–DQ0 DQ15/A-1 Data Output (DQ7–DQ0) Address Input Data Output (DQ14–DQ0) DQ15 Output tFHQV Document Number: 002-00857 Rev. *J Page 50 of 65 S29JL032J Figure 17.2 BYTE# Timings for Write Operations[50] CE# The falling edge of the last WE# signal WE# BYTE# 17.4 tSET (tAS) tHOLD (tAH) Erase and Program Operations Parameter JEDEC Speed Options Std Description [51] 70 Unit 60 70 ns tAVAV tWC Write Cycle Time tAVWL tAS Address Setup Time Min tASO Address Setup Time to OE# low during toggle bit polling Min tAH Address Hold Time Min tAHT Address Hold Time From CE# or OE# high during toggle bit polling Min tDVWH tDS Data Setup Time Min tWHDX tDH Data Hold Time Min 0 ns tOEPH Output Enable High during toggle bit polling Min 20 ns tGHWL tGHWL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tELWL tCS CE# Setup Time Min 0 ns tWLAX Min 60 0 ns 12 35 ns 35 0 35 ns ns 40 ns tWHEH tCH CE# Hold Time Min tWLWH tWP Write Pulse Width Min 25 30 ns tWHDL tWPH Write Pulse Width High Min 25 30 ns tSR/W Latency Between Read and Write Operations Min 0 0 ns ns Byte Typ 6 Word Typ 6 Accelerated Programming Operation, Byte or Word[52] Typ 4 µs Sector Erase Operation[52] tWHWH1 tWHWH1 Programming Operation[52] tWHWH1 tWHWH1 tWHWH2 tWHWH2 µs Typ 0.5 sec tVCS VCC Setup Time [51] Min 50 µs tRB Write Recovery Time from RY/BY# Min 0 ns Program/Erase Valid to RY/BY# Delay Max 90 ns Erase Suspend Latency Max 35 µs tBUSY tESL Notes 50. Refer to the table in Section 17.4 Erase and Program Operations on page 51 for tAS and tAH specifications. 51. Not 100% tested. 52. See Section 18. Data Integrity on page 58 for more information. Document Number: 002-00857 Rev. *J Page 51 of 65 S29JL032J Figure 14. Program Operation Timings[53, 54] Program Command Sequence (last two cycles) tAS tWC Addresses Read Status Data (last two cycles) 555h PA PA PA tAH CE# tCH OE# tWHWH1 tWP WE# tWPH tCS tDS tDH A0h Data PD Status tBUSY DOUT tRB RY/BY# VCC tVCS Figure 15. Accelerated Program Timing Diagram VHH WP#/ACC VIL or VIH VIL or VIH tVHH tVHH Notes 53. PA = program address, PD = program data, DOUT is the true data at the program address. 54. Illustration shows device in word mode. Document Number: 002-00857 Rev. *J Page 52 of 65 S29JL032J Figure 16. Chip/Sector Erase Operation Timings[55, 56] Erase Command Sequence (last two cycles) tAS tWC 2AAh Addresses Read Status Data VA SA VA 555h for chip erase tAH CE# tCH OE# tWP WE# tWPH tCS tWHWH2 tDS tDH Data 55h In Progress 30h Complete 10 for Chip Erase tBUSY tRB RY/BY# tVCS VCC Figure 17. Back-to-back Read/Write Cycle Timings Addresses tWC tWC tRC Valid PA Valid RA tWC Valid PA Valid PA tAH tCPH tACC tCE CE# tCP tOE OE# tOEH tGHWL tWP WE# tWPH tDF tDS tOH tDH Data Valid Out Valid In Valid In Valid In tSR/W WE# Controlled Write Cycle Read Cycle CE# or CE2# Controlled Write Cycles Notes 55. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see Section 11. Write Operation Status on page 37). 56. These waveforms are for the word mode. Document Number: 002-00857 Rev. *J Page 53 of 65 S29JL032J Figure 18. Data# Polling Timings (During Embedded Algorithms)[57] tRC Addresses VA VA VA tACC tCE CE# tCH tOE OE tOEH WE# tDF tOH DQ7 DQ0–DQ6 Complement Compleme Status Status Valid Data Tru Valid Data Tru High-Z High-Z tBUSY RY/BY# Figure 19. Toggle Bit Timings (During Embedded Algorithms)[58] tAHT tAS Addresses tAHT tASO CE# tCPH tOEH WE# tOEPH OE# tDH DQ6/DQ2 Valid Data tOE Valid Status Valid Status Valid Status (first read) (second read) (stops toggling) Valid Data RY/BY# Notes 57. VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. 58. VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. Document Number: 002-00857 Rev. *J Page 54 of 65 S29JL032J Figure 20. DQ2 vs. DQ6[59] Enter Embedded Erasing Erase Suspend Erase Suspend Program Erase Suspend Read Erase WE# Enter Erase Suspend Program Erase Resume Erase Complete Erase Erase Suspend Read DQ6 DQ2 17.5 Temporary Sector Unprotect Parameter JEDEC All Speed Options Unit tVIDR Std VID Rise and Fall Time[60] Description Min 500 ns tVHH [60] VHH Rise and Fall Time Min 250 ns tRSP RESET# Setup Time for Temporary Sector Unprotect Min 4 µs tRRB RESET# Hold Time from RY/BY# High for Temporary Sector Unprotect Min 4 µs Figure 17.3 Temporary Sector Unprotect Timing Diagram VID RESET# VID VSS, VIL, or VIH VSS, VIL, or VIH tVIDR tVIDR Program or Erase Command Sequence CE# WE# tRSP tRRB RY/BY# Notes 59. DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6. 60. Not 100% tested. Document Number: 002-00857 Rev. *J Page 55 of 65 S29JL032J Figure 17.4 Sector/Sector Block Protect and Unprotect Timing Diagram[61] VID VIH RESET# SA, A6, A1, A0 Valid* Valid* Sector Group Protect/Unprotect Data 60h Valid* Verify 60h 40h Status 1 µs Sector Group Protect: 150 µs Sector Group Unprotect: 15 ms CE# WE# OE# 17.6 Alternate CE# Controlled Erase and Program Operations Parameter JEDEC Speed Options Std. Description [62] 70 Unit 60 70 ns tWC Write Cycle Time tAVWL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 35 35 ns tDVEH tDS Data Setup Time Min 30 30 ns tEHDX tDH Data Hold Time Min 0 ns tGHEL tGHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns tWLEL tWS WE# Setup Time Min 0 ns tEHWH tWH WE# Hold Time Min tELEH tCP CE# Pulse Width Min 25 35 ns tEHEL tCPH CE# Pulse Width High Min 25 30 ns tWHWH1 tWHWH1 Programming Operation[63] tWHWH1 tWHWH1 tWHWH2 tWHWH2 tAVAV Min 60 0 ns 0 ns Byte Typ 6 Word Typ 6 Accelerated Programming Operation, Byte or Word[63] Typ 4 µs Sector Erase Operation[63] Typ 0.5 sec µs Notes 61. For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0. 62. Not 100% tested. 63. See Data Integrity on page 58 for more information. Document Number: 002-00857 Rev. *J Page 56 of 65 S29JL032J Figure 21. Alternate CE# Controlled Write (Erase/Program) Operation Timings[64, 65, 66, 67] 555 for program 2AA for erase PA for program SA for sector erase 555 for chip erase Data# Polling Addresses PA tWC tAS tAH tWH WE# tGHEL OE# tCP CE# tWS tWHWH1 or 2 tCPH tBUSY tDS tDH DQ7# Data tRH A0 for program 55 for erase DOUT PD for program 30 for sector erase 10 for chip erase RESET# RY/BY# Notes 64. Figure indicates last two bus cycles of a program or erase operation. 65. PA = program address, SA = sector address, PD = program data. 66. DQ7# is the complement of the data written to the device. DOUT is the data written to the device. 67. Waveforms are for the word mode. Document Number: 002-00857 Rev. *J Page 57 of 65 S29JL032J 18. Data Integrity 18.1 Erase Endurance Table 16. Erase Endurance Parameter Program/Erase cycles per main Flash array sectors Program/Erase cycles per PPB array or non-volatile register array [68] Minimum Unit 100K PE cycle 100K PE cycle Note 68. Each write command to a non-volatile register causes a PE cycle on the entire non-volatile register array. 18.2 Data Retention Table 17. Data Retention Parameter Data Retention Time Test Conditions Minimum Time Unit 10K Program/Erase Cycles 20 Years 100K Program/Erase Cycles 2 Years Contact Cypress Sales and FAE for further information on the data integrity. An application note is available at: http://www.cypress.com/appnotes. Document Number: 002-00857 Rev. *J Page 58 of 65 S29JL032J 19. Erase and Programming Performance Typ[69] Max[70] Sector Erase Time 0.5 5 Chip Erase Time 39 Byte Program Time 6 80 µs Word Program Time 6 80 µs Accelerated Byte/Word Program Time 4 70 µs Parameter Unit sec sec Comments Excludes 00h programming prior to erasure[71] Excludes system level overhead[72] Notes 69. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0V, 100,000 cycles; checkerboard data pattern. 70. Under worst case conditions of 90°C, VCC = 2.7V, 1,000,000 cycles. 71. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 72. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 13 on page 35 for further information on command definitions. 73. The device has a minimum program and erase cycle endurance of 100,000 cycles per sector. 20. Pin Capacitance Parameter Symbol CIN Parameter Description Input Capacitance (applies to A20-A0, DQ15-DQ0) COUT Output Capacitance (applies to DQ15-DQ0, RY/BY#) CIN2 Control Pin Capacitance (applies to CE#, WE#, OE#, WP#/ACC, RESET#, BYTE#) Test Setup Max Unit VIN = 0 8.5 pF VOUT = 0 5.5 pF VIN = 0 12 pF Notes 74. Sampled, not 100% tested. 75. Test conditions TA = 25°C, f = 1.0 MHz. Document Number: 002-00857 Rev. *J Page 59 of 65 S29JL032J 21. Physical Dimensions 21.1 TS 048—48-Pin TSOP STANDARD PIN OUT (TOP VIEW) 2X (N/2 TIPS) 0.10 2X 2 1 0.10 2X N SEE DETAIL B A 0.10 C A2 8 R B E (c) 5 e N/2 +1 N/2 5 D1 D 0.20 2X (N/2 TIPS) GAUGE PLANE 9 C PARALLEL TO SEATING PLANE C SEATING PLANE 4 0.25 BASIC 0° A1 L DETAIL A B A B SEE DETAIL A 0.08MM M C A-B b 6 7 WITH PLATING REVERSE PIN OUT (TOP VIEW) e/2 3 1 N 7 c c1 X X = A OR B b1 N/2 N/2 +1 SYMBOL DIMENSIONS MIN. NOM. MAX. 1. 2. PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP). PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN): INK OR LASER MARK. 1.00 1.05 4. TO BE DETERMINED AT THE SEATING PLANE 0.20 0.23 A2 0.95 0.17 0.22 b 0.17 c1 0.10 0.16 c 0.10 0.21 D 20.00 BASIC 18.40 BASIC E 12.00 BASIC 5. DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTRUSION ON E IS 0.15mm PER SIDE AND ON D1 IS 0.25mm PER SIDE. 6. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08mm TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07mm . 7. THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10mm AND 0.25mm FROM THE LEAD TIP. 8. LEAD COPLANARITY SHALL BE WITHIN 0.10mm AS MEASURED FROM THE SEATING PLANE. 0.50 BASIC 0 0° R 0.08 0.60 0.70 8 0.20 48 -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE. 0.27 D1 0.50 DIMENSIONS ARE IN MILLIMETERS (mm). 3. b1 N NOTES: 0.15 0.05 L DETAIL B 1.20 A A1 e BASE METAL SECTION B-B 9. DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS. 10. JEDEC SPECIFICATION NO. REF: MO-142(D)DD. 51-85183 *F Document Number: 002-00857 Rev. *J Page 60 of 65 S29JL032J 21.2 VBK048—48-Pin FBGA 002-19063 ** Document Number: 002-00857 Rev. *J Page 61 of 65 S29JL032J 22. Document History Document History Page Document Title: S29JL032J, 32-Mb (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash Document Number: 002-00857 Orig. of Submission Rev. ECN No. Description of Change Change Date ** – RYSU 01/27/2010 Spansion Publication Number: S29JL032J_00 Initial release *A – RYSU 06/15/2010 Global Changed all references to typical Sector Erase time from 0.4 sec to 0.5 sec. Changed all references to “Secured Silicon Sector” to “Secured Silicon Region”. Corrected spelling and grammatical errors. Product Selector Guide Corrected Standard Voltage Range of 70 ns option from 3.0-3.6V to 2.7-3.6V. Connection Diagrams Added 48-ball FBGA connection diagram. Pin Description Changes “21 Addresses” to “21 Address Pins”. Added clarification that CE#, OE#, WE#, BYTE#, and RY/BY# are Active Low. Ordering Information Added FBGA ordering option. Added Low-halogen, Pb-free ordering option. Added valid combinations for FBGA. Word/Byte Configuration Added clarification that BYTE# must be connected to either the system VCC or ground. Secured Silicon Region Added clarification that D7 is the Secured Silicon Factory Indicator Bit. In Figure Secured Silicon Sector Protect Verify, corrected “Write reset command” to “Secured Silicon Region exit command”. Command Definitions Corrected “Writing specific addresses and data commands or sequences” to “Writing specific addresses and data sequences”. Absolute Maximum Ratings Corrected “A9, OE#, and RESET#” to “A9 and RESET#”. DC Characteristics Removed OE# from ILIT parameter description. Removed OE# = 12.5V from ILIT test conditions. Added 1 MHz to ICC6 and ICC7 test conditions. Removed Note 1 from ICC6 and ICC7. Test Conditions Update Figure “Test Setup” to reflect correct test setup. Added Note 1 to clarify that input rise and fall times are 0-100%. Erase and Programming Performance Changed Chip Erase typical time from 28 sec to 39 sec. Removed Note 5. Physical Dimensions Added VBK048 package outline drawing. Document Number: 002-00857 Rev. *J Page 62 of 65 S29JL032J Document History Page (Continued) Document Title: S29JL032J, 32-Mb (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash Document Number: 002-00857 Orig. of Submission Rev. ECN No. Description of Change Change Date *B – RYSU 08/25/2010 Global Updated the data sheet designation from Advanced Information to Preliminary. Corrected spelling, capitalization, and grammatical errors. Simultaneous Read/Write Operations with Zero Latency Clarified that JL032J can be configured as either a top or bottom boot sector device, not both. Ordering Information Corrected typo in valid combinations table from “…, 41, 41” to “…, 41, 42”. Clarified that Note 1 applies to the Packing Type column. RESET#: Hardware Reset Pin Changed “Refer to AC Characteristics on page 48” to “Refer to Hardware Reset (RESET#) on page 49”. Secured Silicon Region Clarified the Secured Silicon Indicator Bit data based on factory and customer lock status. Removed forward looking statements regarding factory locking features as they are supported in this device. Common Flash Memory Interface (CFI) Clarified that once in the CFI query mode, the system must write the reset command to return to reading array data. Erase Suspend/Erase Resume Commands Added clarification that “It is not recommended to program the Secured Silicon Region after an erase suspend, as proper device functionality cannot be guaranteed.”. Erase and Programming Performance Added Note 5 regarding minimum program and erase cycle endurance. Pin Capacitance Changed section title from “TSOP Pin Capacitance” to “Pin Capacitance”. Updated values to reflect maximum capacitances for both TSOP and BGA. Removed typical capacitance values. Added specific pin clarifications to parameter descriptions. Physical Dimensions Updated the VBK048 package outline drawing. *C – RYSU 04/07/2011 Global Updated the data sheet designation from Preliminary to Full Production (no designation on document). Distinctive Characteristics Corrected “Top and bottom boot sectors in the same device” to “Top and bottom boot sector configurations available”. RESET#: Hardware Reset Pin Added warning that keeping CE# at VIL from power up through the first reset could cause erroneuous data on the first read. Reset Command Clarified that during an embedded program or erase, if DQ5 goes high then RY/ BY# will remain low until a reset is issued. Hardware Reset (RESET#) Added note to the “Reset Timings” figure clarifying that CE# should only go low after RESET# has gone high. Document Number: 002-00857 Rev. *J Page 63 of 65 S29JL032J Document History Page (Continued) Document Title: S29JL032J, 32-Mb (4M × 8-Bit/2M × 16-Bit), 3 V, Simultaneous Read/Write Flash Document Number: 002-00857 Orig. of Submission Rev. ECN No. Description of Change Change Date *D – RYSU 08/24/2011 RESET#: Hardware Reset Pin Removed warning that keeping CE# at VIL from power up through the first reset could cause erroneuous data on the first read. Command Definitions Table Added Note 17 to clarify additional sector erase commands during time-out period. Sector Erase Command Sequence Added clarification regarding additional sector erase commands during time-out period. Hardware Reset (RESET#) Removed note to the “Reset Timings” figure clarifying that CE# should only go low after RESET# has gone high. Physical Dimensions Package drawings updated to latest version. *E – RYSU 12/16/2011 Global Corrected all references in the text to the sector erase time-out period from 80 μs to 50 μs. Word/Byte Configuration Removed the statement “Please note that the BYTE# pin must be connected to either the system VCC or ground.” *F 5034593 RYSU 12/08/2015 Updated to Cypress template. *G 5742461 AESATMP7 / 05/19/2017 Updated Distinctive Characteristics: SZZX Updated Performance Characteristics: Replaced “Cycling endurance: 1 million cycles per sector typical” with “Cycling endurance: 100K cycles per sector”. Updated Device Bus Operations: Updated Output Disable Mode: Updated “S29JL032J Sector Addresses - Bottom Boot Devices (Sheet 2 of 2)”: Updated details in “Sector Address A20–A12” column corresponding to SA54 and SA55 sectors. Added Data Integrity. Updated Cypress Logo and Copyright. *H 6214331 PRIT 08/23/2018 Updated Ordering Information: Added “A = Automotive, AEC-Q100 Grade 3 (-40°C to +85°C)” in the diagram. Added “Valid Combinations — Automotive Grade / AEC-Q100”. Updated Physical Dimensions: Updated TS 048—48-Pin TSOP: Removed spec “3664 \ f16-038.10 \ 11.6.7”. Added spec 51-85183 *F. Updated VBK048—48-Pin FBGA: Removed spec “g1001.2 \ f16-038.25 \ 07.13.10”. Added spec 002-19063 **. Updated to new template. *I 6379705 BWHA 11/09/2018 Updated Ordering Information: Updated Valid Combinations — Automotive Grade / AEC-Q100: Updated details in “Model Number” and “Packing Type” columns in the table. Updated to new template. Completing Sunset Review. *J 6585853 BWHA 05/31/2019 Updated to new template. Document Number: 002-00857 Rev. *J Page 64 of 65 S29JL032J Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. PSoC® Solutions Products Arm® Cortex® Microcontrollers Automotive cypress.com/arm cypress.com/automotive Clocks & Buffers Interface cypress.com/clocks cypress.com/interface Internet of Things Memory cypress.com/iot cypress.com/memory Microcontrollers cypress.com/mcu PSoC cypress.com/psoc Power Management ICs Touch Sensing USB Controllers Wireless Connectivity PSoC 1 | PSoC 3 | PSoC 4 | PSoC 5LP | PSoC 6 MCU Cypress Developer Community Community | Projects | Video | Blogs | Training | Components Technical Support cypress.com/support cypress.com/pmic cypress.com/touch cypress.com/usb cypress.com/wireless © Cypress Semiconductor Corporation, 2010–2019. This document is the property of Cypress Semiconductor Corporation and its subsidiaries (“Cypress”). This document, including any software or firmware included or referenced in this document (“Software”), is owned by Cypress under the intellectual property laws and treaties of the United States and other countries worldwide. Cypress reserves all rights under such laws and treaties and does not, except as specifically stated in this paragraph, grant any license under its patents, copyrights, trademarks, or other intellectual property rights. If the Software is not accompanied by a license agreement and you do not otherwise have a written agreement with Cypress governing the use of the Software, then Cypress hereby grants you a personal, non-exclusive, nontransferable license (without the right to sublicense) (1) under its copyright rights in the Software (a) for Software provided in source code form, to modify and reproduce the Software solely for use with Cypress hardware products, only internally within your organization, and (b) to distribute the Software in binary code form externally to end users (either directly or indirectly through resellers and distributors), solely for use on Cypress hardware product units, and (2) under those claims of Cypress’s patents that are infringed by the Software (as provided by Cypress, unmodified) to make, use, distribute, and import the Software solely for use with Cypress hardware products. Any other use, reproduction, modification, translation, or compilation of the Software is prohibited. TO THE EXTENT PERMITTED BY APPLICABLE LAW, CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS DOCUMENT OR ANY SOFTWARE OR ACCOMPANYING HARDWARE, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. No computing device can be absolutely secure. Therefore, despite security measures implemented in Cypress hardware or software products, Cypress shall have no liability arising out of any security breach, such as unauthorized access to or use of a Cypress product. CYPRESS DOES NOT REPRESENT, WARRANT, OR GUARANTEE THAT CYPRESS PRODUCTS, OR SYSTEMS CREATED USING CYPRESS PRODUCTS, WILL BE FREE FROM CORRUPTION, ATTACK, VIRUSES, INTERFERENCE, HACKING, DATA LOSS OR THEFT, OR OTHER SECURITY INTRUSION (collectively, “Security Breach”). Cypress disclaims any liability relating to any Security Breach, and you shall and hereby do release Cypress from any claim, damage, or other liability arising from any Security Breach. In addition, the products described in these materials may contain design defects or errors known as errata which may cause the product to deviate from published specifications. To the extent permitted by applicable law, Cypress reserves the right to make changes to this document without further notice. Cypress does not assume any liability arising out of the application or use of any product or circuit described in this document. Any information provided in this document, including any sample design information or programming code, is provided only for reference purposes. It is the responsibility of the user of this document to properly design, program, and test the functionality and safety of any application made of this information and any resulting product. “High-Risk Device” means any device or system whose failure could cause personal injury, death, or property damage. Examples of High-Risk Devices are weapons, nuclear installations, surgical implants, and other medical devices. “Critical Component” means any component of a High-Risk Device whose failure to perform can be reasonably expected to cause, directly or indirectly, the failure of the High-Risk Device, or to affect its safety or effectiveness. Cypress is not liable, in whole or in part, and you shall and hereby do release Cypress from any claim, damage, or other liability arising from any use of a Cypress product as a Critical Component in a High-Risk Device. You shall indemnify and hold Cypress, its directors, officers, employees, agents, affiliates, distributors, and assigns harmless from and against all claims, costs, damages, and expenses, arising out of any claim, including claims for product liability, personal injury or death, or property damage arising from any use of a Cypress product as a Critical Component in a High-Risk Device. Cypress products are not intended or authorized for use as a Critical Component in any High-Risk Device except to the limited extent that (i) Cypress’s published data sheet for the product explicitly states Cypress has qualified the product for use in a specific High-Risk Device, or (ii) Cypress has given you advance written authorization to use the product as a Critical Component in the specific High-Risk Device and you have signed a separate indemnification agreement. Cypress, the Cypress logo, Spansion, the Spansion logo, and combinations thereof, WICED, PSoC, CapSense, EZ-USB, F-RAM, and Traveo are trademarks or registered trademarks of Cypress in the United States and other countries. For a more complete list of Cypress trademarks, visit cypress.com. Other names and brands may be claimed as property of their respective owners. Document Number: 002-00857 Rev. *J Revised May 31, 2019 Page 65 of 65
S29JL032J60TFI213
物料型号:S29JL032J

器件简介:S29JL032J是一款32Mb的3.0伏特闪存器件,支持同时读写操作。它采用4M x 8位或2M x 16位的组织方式,具备零延迟的特性。

引脚分配:该器件有48个引脚,包括21个地址引脚(A20-A0),15个数据输入/输出引脚(DQ14-DQ0),以及其他控制引脚,例如片使能(CE#)、写使能(WE#)、输出使能(OE#)等。

参数特性: - 同时读写操作:一个存储区可以连续读取数据,而另一个存储区执行擦除/编程功能。 - 零延迟:读写操作之间没有延迟。 - 多存储区架构:提供四存储区架构。 - 启动扇区:提供顶部或底部启动扇区配置。 - 制造工艺:0.11微米工艺技术。 - 安全硅区域:额外的256字节扇区,提供工厂锁定和可识别的电子序列号。

功能详解: - 高性能:访问时间最快60纳秒。 - 超低功耗:在1MHz时的活跃读取电流为2mA,在5MHz时为10mA,待机或自动睡眠模式下为200nA。 - 擦写周期耐久性:每个扇区100K次循环。 - 数据保持时间:典型值20年。

应用信息:该器件适用于需要快速数据访问和高可靠性的应用场景。

封装信息:提供48球细间距BGA和48引脚TSOP封装选项。
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