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S70KL1283/S70KS1283
3.0 V/1.8 V, 128 Mb (16 MB), Octal (xSPI)
Interface HyperRAM (Self-Refresh DRAM)
S70KL1283/S70KS1283, 3.0 V/1.8 V, 64 Mb (8 MB), HyperRAM Self-Refresh DRAM
Features
■
Configurable Burst Characteristics
❐ Linear burst
❐ Wrapped burst lengths:
• 16 bytes (8 clocks)
• 32 bytes (16 clocks)
• 64 bytes (32 clocks)
• 128 bytes (64 clocks)
❐ Hybrid option - one wrapped burst followed by linear burst
on 64 Mb. Linear Burst across die boundary is not supported.
Configurable output drive strength
Interface
■
xSPI (Octal) Interface
■
1.8 V / 3.0 V Interface support
❐ Single ended clock (CK) - 11 bus signals
❐ Optional Differential clock (CK, CK#) - 12 bus signals
■
Chip Select (CS#)
■
8-bit data bus (DQ[7:0])
■
■
Hardware reset (RESET#)
■
■
Bidirectional Read-Write Data Strobe (RWDS)
❐ Output at the start of all transactions to indicate refresh
latency
❐ Output during read transactions as Read Data Strobe
❐ Input during write transactions as Write Data Mask
■
Array Refresh
❐ Partial Memory Array (1/8, 1/4, 1/2, and so on)
❐ Full
■
Package
❐ 24-ball FBGA
■
Operating Temperature Range
❐ Industrial (I): –40 °C to +85 °C
❐ Industrial Plus (V): –40 °C to +105 °C
❐ Automotive, AEC-Q100 Grade 3: –40 °C to +85 °C
❐ Automotive, AEC-Q100 Grade 2: –40 °C to +105°C
■
Optional DDR Center-Aligned Read Strobe (DCARS)
❐ During read transactions RWDS is offset by a second clock,
phase shifted from CK
❐ The Phase Shifted Clock is used to move the RWDS
transition edge within the read data eye
Performance, Power, and Packages
Power Modes[1]
❐ Hybrid Sleep Mode
❐ Deep Power Down
■
200-MHz maximum clock rate
■
DDR - transfers data on both edges of the clock
Technology
■
Data throughput up to 400 MBps (3,200 Mbps)
■
38-nm DRAM
Note
1. 128-Mb HyperRAM is a stacked-die chip using two 64-Mb dice. Only one die, at a time, can be programmed to enter Hybrid Sleep Mode mode or Deep Power Down
mode.
Cypress Semiconductor Corporation
Document Number: 002-29418 Rev .**
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised February 07, 2020
S70KL1283/S70KS1283
Performance Summary
Read Transaction Timings
Unit
Maximum Clock Rate at 1.8 V VCC/VCCQ
200 MHz
Maximum Clock Rate at 3.0 V VCC/VCCQ
200 MHz
Maximum Access Time, (tACC)
35 ns
Maximum Current Consumption
Unit
Burst Read or Write (linear burst at 200 MHz, 1.8 V)
50 mA
Burst Read or Write (linear burst at 200 MHz, 3.0 V)
60 mA
Standby (CS# = VCC = 3.6 V, 105 °C)
750 µA
Deep Power Down (CS# = VCC = 3.6 V, 105 °C)
360 µA
Standby (CS# = VCC = 2.0 V, 105 °C)
660 µA
Deep Power Down (CS# = VCC = 2.0 V, 105 °C)
330 µA
Logic Block Diagram
CS#
CS#
CK/CK#
CK/CK#
RWDS
RWDS
X Decoders
64 Mb
HyperRAM
HyperRAM
1 - Die 0
I/O
DQ[7:0]
Control
Logic
Memory
Y Decoders
DQ[7:0]
Data Latch
RESET#
Data Path
X Decoders
64 Mb
HyperRAM
HyperRAM
2 - Die 1
CS#
CK/CK#
Memory
RWDS
I/O
DQ[7:0]
RESET#
Control
Logic
Y Decoders
Data Latch
RESET#
Data Path
Document Number: 002-29418 Rev .**
Page 2 of 51
S70KL1283/S70KS1283
Contents
General Description ......................................................... 4
xSPI (Octal) Interface .................................................. 4
Product Overview ............................................................. 6
xSPI (Octal) Interface .................................................. 6
Signal Description ............................................................ 7
Input/Output Summary ................................................ 7
xSPI (Octal) Transaction Details ..................................... 8
Command/Address/Data Bit Assignments .................. 8
RESET ENABLE Transaction ..................................... 9
RESET Transaction ..................................................... 9
READ ID Transaction ................................................ 10
DEEP POWER DOWN Transaction .......................... 11
READ Transaction ..................................................... 12
WRITE Transaction ................................................... 12
WRITE DISABLE Transaction ................................... 13
READ ANY REGISTER Transaction ......................... 14
WRITE ANY REGISTER Transaction ....................... 14
Data Placement During Memory READ/WRITE
Transactions .............................................................. 15
Data Placement During Register READ/WRITE
Transactions .............................................................. 16
Memory Space ................................................................ 17
xSPI (Octal) Interface ................................................ 17
Density and Row Boundaries .................................... 17
Register Space Access .................................................. 17
xSPI (Octal) Interface ................................................ 17
Device Identification Registers .................................. 18
Interface States ............................................................... 24
Power Conservation Modes .......................................... 25
Interface Standby ...................................................... 25
Active Clock Stop ...................................................... 25
Hybrid Sleep .............................................................. 25
Deep Power Down .................................................... 26
Electrical Specifications ................................................ 27
Absolute Maximum Ratings ....................................... 27
Latch-up Characteristics ............................................ 27
Document Number: 002-29418 Rev .**
Operating Ranges ..................................................... 28
DC Characteristics .................................................... 29
Power-up Initialization ............................................... 33
Power Down .............................................................. 34
Hardware Reset ........................................................ 35
Software Reset .......................................................... 35
Timing Specifications .................................................... 36
Key to Switching Waveforms ..................................... 36
AC Test Conditions ................................................... 36
CLK Characteristics ................................................... 37
AC Characteristics ..................................................... 38
Physical Interface ........................................................... 41
FBGA 24-Ball 5 x 5 Array Footprint ........................... 41
Physical Diagrams ..................................................... 42
DDR Center-Aligned Read Strobe (DCARS)
Functionality ................................................................... 43
xSPI HyperRAM Products with DCARS Signal
Descriptions ............................................................... 43
HyperRAM Products with DCARS — FBGA 24-ball, 5 x 5
Array Footprint ........................................................... 44
HyperRAM Memory with DCARS Timing .................. 44
Ordering Information ...................................................... 46
Ordering Part Number ............................................... 46
Valid Combinations ................................................... 47
Valid Combinations — Automotive Grade /
AEC-Q100 ................................................................. 48
Acronyms ........................................................................ 49
Document Conventions ................................................. 49
Revision History ............................................................. 50
Sales, Solutions, and Legal Information ...................... 51
Worldwide Sales and Design Support ....................... 51
Products .................................................................... 51
PSoC® Solutions ...................................................... 51
Cypress Developer Community ................................. 51
Technical Support ..................................................... 51
Page 3 of 51
S70KL1283/S70KS1283
General Description
The Cypress 128-Mb HyperRAM device is a high-speed CMOS, self-refresh DRAM, with xSPI (Octal) interface. The DRAM array
uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM
array when the memory is not being actively read or written by the xSPI interface master (host). Since the host is not required to
manage any refresh operations, the DRAM array appears to the host as though the memory uses static cells that retain data without
refresh. Hence, the memory is more accurately described as Pseudo Static RAM (PSRAM).
Since the DRAM cells cannot be refreshed during a read or write transaction, there is a requirement that the host limit read or write
burst transfers lengths to allow internal logic refresh operations when they are needed. The host must confine the duration of transactions and allow additional initial access latency, at the beginning of a new transaction, if the memory indicates a refresh operation
is needed. The dual-die, 128-Mb HyperRAM chip supports data transactions with additional (2X) latency only.
xSPI (Octal) Interface
xSPI (Octal) is a SPI-compatible low signal count, DDR interface supporting eight I/Os. The DDR protocol in xSPI (Octal) transfers
two data bytes per clock cycle on the DQ input/output signals. A read or write transaction on xSPI (Octal) consists of a series of 16-bit
wide, one clock cycle data transfers at the internal RAM array with two corresponding 8-bit wide, one-half-clock-cycle data transfers
on the DQ signals. All inputs and outputs are LV-CMOS compatible. Device are available as 1.8 V VCC/VCCQ or 3.0 V VCC/VCCQ
(nominal) for array (VCC) and I/O buffer (VCCQ) supplies, through different Ordering Part Number (OPN).
Each transaction on xSPI (Octal) must include a command whereas address and data are optional. The transactions are structures
as follows:
■
Each transaction begins with CS# going LOW and ends with CS# returning HIGH.
■
The serial clock (CK) marks the transfer of each bit or group of bits between the host and memory. All transfers occur on every CK
edge (DDR mode).
■
Each transaction has a 16-bit command which selects the type of device operation to perform. The 16-bit command is based on
two 8-bit opcodes. The same 8-bit opcode is sent on both edges of the clock.
■
A command may be stand-alone or may be followed by address bits to select a memory location in the device to access data.
■
Read transactions require a latency period after the address bits and can be zero to several CK cycles. CK must continue to toggle
during any read transaction latency period. During the command and address parts of a transaction, the memory indicates that an
additional latency period is needed for a required refresh time (tRFH) by driving the RWDS signal to the HIGH state.
■
Write transactions to registers do not require a latency period.
■
Write transactions to the memory array require a latency period after the address bits and can be zero to several CK cycles. CK
must continue to toggle during any write transaction latency period. During the command and address parts of a transaction, the
memory indicates that an additional latency period is needed for a required refresh time (tRFH) by driving the RWDS signal to the
HIGH state.
■
In all transactions, command and address bits are shifted in the device with the most significant bits (MSb) first. The individual data
bits within a data byte are shifted in and out of the device MSb first as well. All data bytes are transferred with the lowest address
byte sent out first.
Document Number: 002-29418 Rev .**
Page 4 of 51
S70KL1283/S70KS1283
Figure 1. xSPI (Octal) Command only Transaction (DDR)[1]
CS#
CK#, CK
High: 2X Latency Count
Low: 1X Latency Count
RWDS
CMD
[7:0]
DQ[7:0]
CMD
[7:0]
Command
(Host drives DQ[7:0])
Figure 2. xSPI (Octal) Write with No Latency Transaction (DDR) (Register Writes)[2]
CS#
CK#, CK
High: 2X Latency Count
Low: 1X Latency Count
RWDS
CMD
[7:0]
DQ[7:0]
CMD
[7:0]
ADR
[31:24]
ADR
[23:16]
ADR
[15:8]
ADR
[7:0]
Command - Address
(Host drives DQ[7:0], Memory drives RWDS)
RG
[15:8]
RG
[7:0]
Write Data
Figure 3. xSPI (Octal) Write with 2X Latency Transaction (DDR) (Memory Array Writes)[1, 3, 4]
CS#
CK#, CK
Latency Count (2X)
RWDS
High: 2X Latency Count
Low: 1X Latency Count
RWDS acts as Data Mask
DQ[7:0]
CMD
[7:0]
CMD
[7:0]
ADR
[31:24]
ADR
[23:16]
ADR
[15:8]
ADR
[7:0]
DinA
[7:0]
Command - Address
(Host drives DQ[7:0] and Memory drives RWDS)
DinA+1
[7:0]
DinA+2
[7:0]
DinA+3
[7:0]
Write Data
(Host drives DQ[7:0])
Figure 4. xSPI (Octal) Read with 2X Latency Transaction (DDR) (All Reads)[1, 5]
CS#
CK#, CK
Latency Count (2X)
RWDS
High: 2X Latency Count
Low: 1X Latency Count
RWDS & Data are edge aligned
DQ[7:0]
CMD
[7:0]
CMD
[7:0]
ADR
[31:24]
ADR
[23:16]
ADR
[15:8]
ADR
[7:0]
Command - Address
(Host drives DQ[7:0] and Memory drives RWDS)
DoutA
[7:0]
DoutA+1
[7:0]
DoutA+2
[7:0]
DoutB+3
[7:0]
Read Data
(Memory drives RWDS)
Notes
1. The initial latency "Low = 1x Latency Count" is not applicable in dual-die, 128 Mb HyperRAM.
2. Write with no latency transaction is used for register writes only.
3. RWDS is driven by HyperRAM during Command & Address cycles for 2X latency and then driven by the host for data masking.
4. Data DinA and DinA+2 are masked.
5. RWDS is driven by HyperRAM during Command & Address cycles for 2X latency and then driven again phase aligned with data.
Document Number: 002-29418 Rev .**
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S70KL1283/S70KS1283
Product Overview
The 128-Mb HyperRAM device is 1.8 V or 3.0 V array and I/O, synchronous self-refresh Dynamic RAM (DRAM). The HyperRAM
device provides an xSPI (Octal) slave interface to the host system. The xSPI (Octal) interface has an 8-bit (1 byte) wide DDR data
bus and use only word-wide (16-bit data) address boundaries. Read transactions provide 16 bits of data during each clock cycle
(8 bits on both clock edges). Write transactions take 16 bits of data from each clock cycle (8 bits on each clock edge).
Figure 5. xSPI (Octal) HyperRAM Interface[6]
RESET#
CS#
CK
CK#
VCC
VCCQ
DQ[7:0]
RWDS
VSS
VSSQ
xSPI (Octal) Interface
Read and write transactions require three clock cycles to define the target row/column address and then an initial access latency of
tACC. During the CA part of a transaction, the memory indicates an additional latency for a required refresh time (tRFH) by driving the
RWDS signal to the HIGH state. During a read (or write) transaction, after the initial data value has been output (or input), additional
data can be read from (or written to) the row on subsequent clock cycles in either a wrapped or linear sequence. When configured in
linear burst mode, the device will automatically fetch the next sequential row from the memory array to support a continuous linear
burst. Simultaneously accessing the next row in the array while the read or write data transfer is in progress, allows for a linear
sequential burst operation that can provide a sustained data rate of 400 MBps (1 byte (8 bit data bus) * 2 (data clock edges) *
200 MHz = 400 MBps).
Note
6. CK# is used in Differential Clock mode, but optional.
Document Number: 002-29418 Rev .**
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S70KL1283/S70KS1283
Signal Description
Input/Output Summary
The xSPI (Octal) HyperRAM signals are shown in Table 1. Active Low signal names have a hash symbol (#) suffix.
Table 1. I/O Summary[8]
Symbol
Type
Description
CS#
Chip Select. Bus transactions are initiated with a HIGH to LOW transition. Bus
Master Output, Slave Input transactions are terminated with a Low to High transition. The master device has a
separate CS# for each slave.
CK, CK#[7]
Master Output, Slave Input
Differential Clock. Command, address, and data information is output with respect to
the crossing of the CK and CK# signals. Use of differential clock is optional.
Single Ended Clock. CK# is not used, only a single ended CK is used.
The clock is not required to be free-running.
DQ[7:0]
Input/Output
Data Input/Output. Command, Address, and Data information is transferred on these
signals during Read and Write transactions.
RWDS
Input/Output
Read-Write Data Strobe. During the Command/Address portion of all bus
transactions RWDS is a slave output and indicates whether additional initial latency is
required. Slave output during read data transfer, data is edge aligned with RWDS.
Slave input during data transfer in write transactions to function as a data mask.
The dual-die, 128-Mb HyperRAM chip supports data transactions with additional (2X)
latency only.
RESET#
Hardware RESET. When LOW, the slave device will self initialize and return to the
Master Output, Slave Input, Standby state. RWDS and DQ[7:0] are placed into the HIGH-Z state when RESET# is
LOW. The slave RESET# input includes a weak pull-up, if RESET# is left unconnected
Internal Pull-up
it will be pulled up to the HIGH state.
VCC
Power Supply
Array Power.
VCCQ
Power Supply
Input/Output Power.
VSS
Power Supply
Array Ground.
VSSQ
Power Supply
Input/Output Ground.
RFU
No Connect
Reserved for Future Use. May or may not be connected internally, the signal/ball
location should be left unconnected and unused by PCB routing channel for future
compatibility. The signal/ball may be used by a signal in the future.
Notes
7. CK# is used in Differential Clock mode, but optional connection. Tie the CK# input pin to either VccQ or VssQ if not connected to the host controller, but do not
leave it floating.
8. Optional DCARS pinout and pin description are outlined in section DDR Center-Aligned Read Strobe (DCARS) Functionality on page 43.
Document Number: 002-29418 Rev .**
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S70KL1283/S70KS1283
xSPI (Octal) Transaction Details
The xSPI (Octal) master begins a transaction by driving CS# LOW while clock is idle. Then the clock begins toggling while CA words
are transferred.
For memory Read and Write transactions, the xSPI (Octal) master then continues clocking for a number of cycles defined by the
latency count setting in configuration register 0 (Register Write transactions do not require any latency count). The initial latency
count required for a particular clock frequency is based on RWDS. If RWDS is LOW during the CA cycles, one latency count is
inserted. If RWDS is HIGH during the CA cycles, an additional latency count is inserted. Once these latency clocks have been
completed the memory starts to simultaneously transition the RWDS and output the target data. The dual-die, 128-Mb HyperRAM
chip supports data transactions with additional (2X) latency only.
During the read data transfers, read data is output edge aligned with every transition of RWDS. Data will continue to be output as
long as the host continues to transition the clock while CS# is LOW. Note that burst transactions should not be so long as to prevent
the memory from doing distributed refreshes.
During the write data transfers, write data is center-aligned with the clock edges. The first byte of data in each word is captured by
the memory on the rising edge of CK and the second byte is captured on the falling edge of CK. RWDS is driven by the host master
interface as a data mask. When data is being written and RWDS is HIGH the byte will be masked and the array will not be altered.
When data is being written and RWDS is LOW the data will be placed into the array. Because the master is driving RWDS during
write data transfers, neither the master nor the HyperRAM device are able to indicate a need for latency within the data transfer
portion of a write transaction. The acceptable write data burst length setting is also shown in configuration register 0.
Wrapped bursts will continue to wrap within the burst length and linear burst will output data in a sequential manner across row
boundaries. When a linear burst read reaches the last address in the array, continuing the burst beyond the last address will provide
data from the beginning of the address range. Read transfers can be ended at any time by bringing CS# HIGH when the clock is
idle. The clock is not required to be free-running. The clock may remain idle while CS# is HIGH.
Command/Address/Data Bit Assignments
Table 2. Command Set[9, 10, 11, 12, 13]
Code
CA-Data
Address
(Bytes)
Latency
Cycles
Data
(Bytes)
REST ENABLE
0x66
8-0-0
0
0
0
RESET
0x99
8-0-0
0
0
0
0x9F
8-8-8
4 (0x00)
3-7
4
0xB9
8-0-0
0
0
0
0xEE
8-8-8
4
3-7
1 to
0xDE
8-8-8
4
3-7
1 to
WRITE ENABLE
0x06
8-0-0
0
0
0
WRITE DISABLE
0x04
8-0-0
0
0
0
0x65
8-8-8
4
3-7
2
Command
Prerequisite
Software Reset
RESET
ENABLE
Identification
READ ID[9]
Power Modes
DEEP POWER DOWN
Read Memory Array
READ (DDR)
Write Memory Array
WRITE (DDR)
WRITE
ENABLE
Write Enable / Disable
Read Registers
READ ANY REGISTER
Write Registers
Notes
9. The two identification registers contents are read together - identification 0 followed by identification 1.
10. Write Enable provides protection against inadvertent changes to memory or register values. It sets the internal write enable latch (WEL) which allows write transactions
to execute afterwards.
11. Write Disable can be used to disable write transactions from execution. It resets the internal write enable latch (WEL).
12. The WEL latch stays set to ‘1’ at the end of any successful memory write transaction. After a power down / power up sequence, or a hardware/software reset, WEL
latch is cleared to ‘0’.
13. The internal WEL latch is cleared to ‘0’ at the end of any successful register write transaction.
Document Number: 002-29418 Rev .**
Page 8 of 51
S70KL1283/S70KS1283
Table 2. Command Set[9, 10, 11, 12, 13] (Continued)
Command
WRITE ANY
REGISTER
Code
CA-Data
Address
(Bytes)
Latency
Cycles
Data
(Bytes)
Prerequisite
0x71
8-8-8
4
0
2
WRITE
ENABLE
Notes
9. The two identification registers contents are read together - identification 0 followed by identification 1.
10. Write Enable provides protection against inadvertent changes to memory or register values. It sets the internal write enable latch (WEL) which allows write transactions
to execute afterwards.
11. Write Disable can be used to disable write transactions from execution. It resets the internal write enable latch (WEL).
12. The WEL latch stays set to ‘1’ at the end of any successful memory write transaction. After a power down / power up sequence, or a hardware/software reset, WEL
latch is cleared to ‘0’.
13. The internal WEL latch is cleared to ‘0’ at the end of any successful register write transaction.
RESET ENABLE Transaction
The RESET ENABLE transaction is required immediately before a RESET transaction. Any transaction other than RESET following
RESET ENABLE will clear the reset enable condition and prevent a later RESET transaction from being recognized.
Figure 6. RESET ENABLE Transaction (DDR)[14]
CS#
CK#, CK
RWDS
DQ[7:0]
High: 2X Latency Count
Low: 1X Latency Count
CMD
[7:0]
CMD
[7:0]
Command
(Host drives DQ[7:0])
RESET Transaction
The RESET transaction immediately following a RESET ENABLE will initiate the software reset process.
Figure 7. RESET Transaction (DDR)[14]
CS#
CK#, CK
RWDS
DQ[7:0]
High: 2X Latency Count
Low: 1X Latency Count
CMD
[7:0]
CMD
[7:0]
Command
(Host drives DQ[7:0])
Note
14. The initial latency "Low = 1x Latency Count" is not applicable in dual-die,128-Mb HyperRAM.
Document Number: 002-29418 Rev .**
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S70KL1283/S70KS1283
READ ID Transaction
The READ ID transaction provides read access to device identification registers 0 and 1. The registers contain the manufacturer’s
identification along with device identification. The read data sequence is as follows.
Table 3. READ ID Data Sequence
Address Space
Byte Order
Byte Position
A
Register 0
Big-endian
B
A
Register 1
Big-endian
B
Document Number: 002-29418 Rev .**
Word Data Bit
DQ
15
7
14
6
13
5
12
4
11
3
10
2
9
1
8
0
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
15
7
14
6
13
5
12
4
11
3
10
2
9
1
8
0
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
Page 10 of 51
S70KL1283/S70KS1283
Figure 8. READ ID with 2X Latency Transaction (DDR) [15]
CS#
CK#, CK
Latency Count (2X)
RWDS
High: 2X Latency Count
Low: 1X Latency Count
RWDS & Data are edge aligned
DQ[7:0]
CMD
[7:0]
CMD
[7:0]
0x00
0x00
0x00
IDRG 0
[15:8]
0x00
Command - Address
(Host drives DQ[7:0] and Memory drives RWDS)
IDRG 0
[7:0]
IDRG 1
[15:8]
IDRG 1
[7:0]
Read Data
(Memory drives RWDS)
DEEP POWER DOWN Transaction
DEEP POWER DOWN transaction brings the device into Deep Power Down state which is the lowest power consumption state.
Writing a “0” to CR0[15] will also bring the device in Deep Power Down State. All register contents are lost in Deep Power Down
State and the device powers-up in its default state.
Figure 9. DEEP POWER DOWN Transaction (DDR)[15]
CS#
CK#, CK
RWDS
DQ[7:0]
High: 2X Latency Count
Low: 1X Latency Count
CMD
[7:0]
CMD
[7:0]
Command
(Host drives DQ[7:0])
Note
15. The initial latency "Low = 1x Latency Count" is not applicable in dual-die,128-Mb HyperRAM.
Document Number: 002-29418 Rev .**
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S70KL1283/S70KS1283
READ Transaction
The READ transaction reads data from the memory array. It has a latency requirement (dummy cycles) which allows the device’s
internal circuitry enough time to access the addressed memory location. During these latency cycles, the host can tristate the data
bus DQ[7:0].
Figure 10. READ with 2X Latency Transaction (DDR)[16, 17]
CS#
CK#, CK
Latency Count (2X)
High: 2X Latency Count
Low: 1X Latency Count
RWDS
RWDS & Data are edge aligned
CMD
[7:0]
DQ[7:0]
CMD
[7:0]
ADR
[31:24]
ADR
[23:16]
ADR
[15:8]
ADR
[7:0]
DoutA
[7:0]
Command - Address
(Host drives DQ[7:0] and Memory drives RWDS)
DoutA+1
[7:0]
DoutA+2
[7:0]
DoutB+3
[7:0]
Read Data
(Memory drives RWDS)
WRITE Transaction
The WRITE transaction writes data to the memory array. It has a latency requirement (dummy cycles) which allows the device’s
internal circuitry enough time to access the addressed memory location. During these latency cycles, the host can tristate the data
bus DQ[7:0].
WRITE ENABLE transaction which sets the WEL latch must be executed before the first WRITE. The WEL latch stays set to ‘1’ at
the end of any successful memory write transaction. It must be reset by WRITE DISABLE transaction to prevent any inadvertent
writes to the memory array.
Figure 11. WRITE with 2X Latency Transaction (DDR)[16, 17, 18]
CS#
CK#, CK
Latency Count (2X)
RWDS
DQ[7:0]
High: 2X Latency Count
Low: 1X Latency Count
RWDS acts as Data Mask
CMD
[7:0]
CMD
[7:0]
ADR
[31:24]
ADR
[23:16]
ADR
[15:8]
ADR
[7:0]
Command - Address
(Host drives DQ[7:0] and Memory drives RWDS)
DinA
[7:0]
DinA+1
[7:0]
DinA+2
[7:0]
DinA+3
[7:0]
Write Data
(Host drives DQ[7:0])
Notes
16. RWDS is driven by HyperRAM during Command & Address cycles for 2X latency and then is driven again phase aligned with data.
17. The initial latency "Low = 1x Latency Count" is not applicable in dual-die,128-Mb HyperRAM.
18. Data DinA and DinA+2 are masked.
Document Number: 002-29418 Rev .**
Page 12 of 51
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WRITE ENABLE Transaction
The WRITE ENABLE transaction must be executed prior to any transaction that modifies data either in the memory array or the
registers.
Figure 12. WRITE ENABLE Transaction (DDR)[19]
CS#
CK#, CK
RWDS
DQ[7:0]
High: 2X Latency Count
Low: 1X Latency Count
CMD
[7:0]
CMD
[7:0]
Command
(Host drives DQ[7:0])
WRITE DISABLE Transaction
The WRITE DISABLE transaction inhibits writing data either in the memory array or the registers.
Figure 13. WRITE DISABLE Transaction (DDR)[19]
CS#
CK#, CK
RWDS
DQ[7:0]
High: 2X Latency Count
Low: 1X Latency Count
CMD
[7:0]
CMD
[7:0]
Command
(Host drives DQ[7:0])
Note
19. The initial latency "Low = 1x Latency Count" is not applicable in dual-die,128-Mb HyperRAM.
Document Number: 002-29418 Rev .**
Page 13 of 51
S70KL1283/S70KS1283
READ ANY REGISTER Transaction
The READ ANY REGISTER transaction reads all the device registers. It has a latency requirement (dummy cycles) which allows the
device’s internal circuitry enough time to access the addressed register location. During these latency cycles, the host can tristate
the data bus DQ[7:0].
Figure 14. READ ANY REGISTER with 2X Latency Transaction (DDR)[20, 21]
CS#
CK#, CK
Latency Count (2X)
High: 2X Latency Count
Low: 1X Latency Count
RWDS
RWDS & Data are edge aligned
CMD
[7:0]
DQ[7:0]
CMD
[7:0]
ADR
[31:24]
ADR
[23:16]
ADR
[15:8]
ADR
[7:0]
RG
[15:8]
Command - Address
(Host drives DQ[7:0] and Memory drives RWDS)
RG
[7:0]
Read Data
(Memory drives RWDS)
WRITE ANY REGISTER Transaction
The WRITE ANY REGISTER transaction writes to the device registers. It does not have a latency requirement (dummy cycles).
Figure 15. xSPI (Octal) Write with No Latency Transaction (DDR) (Register Writes)[21, 22, 23]
CS#
CK#, CK
RWDS
DQ[7:0]
High: 2X Latency Count
Low: 1X Latency Count
CMD
[7:0]
CMD
[7:0]
ADR
[31:24]
ADR
[23:16]
ADR
[15:8]
Command - Address
(Host drives DQ[7:0], Memory drives RWDS)
ADR
[7:0]
RG
[15:8]
RG
[7:0]
Write Data
Notes
20. RWDS is driven by HyperRAM during Command & Address cycles for 2X latency and then driven again phase aligned with data.
21. The initial latency "Low = 1x Latency Count" is not applicable in dual-die,128-Mb HyperRAM.
22. Write with no latency transaction is used for register writes only.
23. Data Mask on RWDS is not supported.
Document Number: 002-29418 Rev .**
Page 14 of 51
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Data Placement During Memory READ/WRITE Transactions
Data placement during memory Read/Write is dependent upon the host. The device will output data (read) as it was written in
(write). Hence both Big Endian and Little Endian are supported for the memory array.
Table 4. Data Placement during Memory READ and WRITE
Address
Space
Byte
Order
Byte
Position
A
Bigendian
B
Memory
A
Littleendian
B
Word
Data
Bit
DQ
15
7
14
6
13
5
12
4
11
3
10
2
9
1
8
0
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
15
7
14
6
13
5
12
4
11
3
10
2
9
1
8
0
Document Number: 002-29418 Rev .**
Bit Order
When data is being accessed in memory space:
The first byte of each word read or written is the “A” byte and the second is the “B” byte.
The bits of the word within the A and B bytes depend on how the data was written. If the word
lower address bits 7-0 are written in the A byte position and bits 15-8 are written into the B byte
position, or vice versa, they will be read back in the same order.
So, memory space can be stored and read in either little-endian or big-endian order.
Page 15 of 51
S70KL1283/S70KS1283
Data Placement During Register READ/WRITE Transactions
Data placement during register Read/Write is Big Endian.
Table 5. Data Placement during Register READ/WRITE Transactions
Address
Space
Byte
Order
Byte
Position
A
Register
Bigendian
B
Word
Data
Bit
DQ
15
7
14
6
13
5
12
4
11
3
10
2
9
1
8
0
7
7
6
6
5
5
4
4
3
3
2
2
1
1
0
0
Document Number: 002-29418 Rev .**
Bit Order
When data is being accessed in register space:
During a Read transaction on the xSPI (Octal) two bytes are transferred on each clock cycle. The
upper order byte A (Word[15:8]) is transferred between the rising and falling edges of RWDS
(edge aligned). The lower order byte B (Word[7:0]) is transferred between the falling and rising
edges of RWDS.
During a write, the upper order byte A (Word[15:8]) is transferred on the CK rising edge and the
lower order byte B (Word[7:0]) is transferred on the CK falling edge.
So, register space is always read and written in Big-endian order because registers have device
dependent fixed bit location and meaning definitions.
Page 16 of 51
S70KL1283/S70KS1283
Memory Space
xSPI (Octal) Interface
Table 6. Memory Space Address Map (byte based - 8 bits with least significant bit A(0) always set to ‘0’)
Unit Type
Count
System Byte Address Bits
Address Bits
Rows within 128-Mb
device
16384 (rows)
A22 - A9
35 - 22
Rows within 64-Mb
device
8192 (rows)
A22 - A10
22 - 10
1 (row)
A9 - A4
9-4
512 (16-bit word) or 1 KB
16 (byte addresses)
A3 - A0
3-0
16 bytes (8 words)
A0 always set to “0”
Row
Half-page
Notes
Density and Row Boundaries
The DRAM array size (density) of the device can be determined from the total number of system address bits used for the row and
column addresses as indicated by the Row Address Bit Count and Column Address Bit Count fields in the ID0 register. For example:
a 64-Mb HyperRAM device has 10 column address bits and 13 row address bits for a total of 23 address bits (byte address) = 223 =
8MB (4M words). The 10 column address bits indicate that each row holds 210 = 512 words = 1KB. The row address bit count indicates
there are 8196 rows to be refreshed within each array refresh interval. The row count is used in calculating the refresh interval.
Register Space Access
xSPI (Octal) Interface
Table 7. Register Space Address Map (Address bit A0 always set to ‘0’)
Registers
Address (Byte Addressable)
Identification Registers 0 (ID0[15:0]) - Die 0
0x00000000
Identification Registers 0 (ID0[15:0]) - Die 1
0x00400000
Identification Registers 1 (ID1[15:0]) - Die 0
0x00000002
Identification Registers 1 (ID1[15:0]) - Die 1
0x00400002
Configuration Registers 0 (ID0[15:0]) - Die 0
0x00000004
Configuration Registers 0 (ID0[15:0]) - Die 1
0x00400004
Configuration Registers 1 (ID1[15:0]) - Die 0
0x00000006
Configuration Registers 1 (ID1[15:0]) - Die 1
0x00400006
Die Manufacture Information Register (Registers 0 to Register 17)
0x00000008, 0x0000000A to 0x0000002A
- Die 0
Die Manufacture Information Register (Registers 0 to Register 17)
0x00400008, 0x0040000A to 0x0040002A
- Die 1
Document Number: 002-29418 Rev .**
Page 17 of 51
S70KL1283/S70KS1283
Device Identification Registers
There are two read-only, nonvolatile, word registers, that provide information on the device selected when CS# is LOW. The device
information fields identify:
■
Manufacturer
■
Type
■
Density
❐ Row address bit count
❐ Column address bit count
Refresh Type
Table 8. Identification Register 0 (ID0) Bit Assignments
Bits
Function
[15:14]
Reserved
00b - Die 0
01b - Die 1
13
Reserved
0 - Default
[12:8]
Settings (Binary)
00000 - One row address bit
...
Row Address Bit Count 11111 - Thirty-two row address bits
...
01100 - 64 Mb - Thirteen row address bits (default)
[7:4]
Column Address Bit
Count
[3:0]
Manufacturer
0000 - One column address bits
...
1000 - Nine column address bits (default)
...
1111 - Sixteen column address bits
0000 - Reserved
0001 - Cypress (default)
0010 to 1111 - Reserved
Table 9. Identification Register 1 (ID1) Bit Assignments
Bits
Function
[15:4]
Reserved
[3:0]
Device Type
Document Number: 002-29418 Rev .**
Settings (Binary)
0000_0000_0000 (default)
0001 - HyperRAM 2.0
0000, 0010 to 1111 - Reserved
Page 18 of 51
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Device Configuration Registers
Configuration Register 0 (CR0)
Configuration Register 0 (CR0) is used to define the power state and access protocol operating conditions for the HyperRAM device.
Configurable characteristics include:
■
Wrapped Burst Length (16, 32, 64, or 128 byte aligned and length data group)
■
Wrapped Burst Type
❐ Legacy wrap (sequential access with wrap around within a selected length and aligned group)
❐ Hybrid wrap (Legacy wrap once then linear burst at start of the next sequential group)
Initial Latency
■
■
Variable Latency
❐ Whether an array read or write transaction will use fixed or variable latency. If fixed latency is selected the memory will always
indicate a refresh latency and delay the read data transfer accordingly. If variable latency is selected, latency for a refresh is only
added when a refresh is required at the same time a new transaction is starting.
Output Drive Strength
■
Deep Power Down (DPD) Mode
■
Table 10. Configuration Register 0 (CR0) Bit Assignments
CR0 Bit
[15]
Function
Deep Power Down Enable
Settings (Binary)
1 - Normal operation (default). HyperRAM will automatically set this value to ‘1’ after
DPD exit
0 - Writing 0 causes the device to enter Deep Power Down
Only one die of the 128-Mb stack-die HyperRAM can be programmed to enter DPD
mode at a time.
[14:12]
Drive Strength
[11:8]
Reserved
[7:4]
Initial Latency
000 - 34 ohms (default)
001 - 115 ohms
010 - 67 ohms
011 - 46 ohms
100 - 34 ohms
101 - 27 ohms
110 - 22 ohms
111 - 19 ohms
1 - Reserved (default)
Reserved for Future Use. When writing this register, these bits should be set to 1 for
future compatibility.
0000 - 5 Clock Latency @ 133 Max Frequency
0001 - 6 Clock Latency @ 166 Max Frequency
0010 - 7 Clock Latency @ 200 MHz/166 MHz Max Frequency (default)
0011 - Reserved
0100 - Reserved
...
1101 - Reserved
1110 - 3 Clock Latency @ 85 Max Frequency
1111 - 4 Clock Latency @ 104 Max Frequency
0 - Reserved
1 - Fixed 2 times Initial Latency (default)
[3]
Fixed Latency Enable
Document Number: 002-29418 Rev .**
The 128-Mb dual-die stack only supports fixed latency. In fixed latency mode, when
CS# asserted LOW,
1. The RWDS signal of each die of dual-die 128-Mb will always drive to HIGH during
CA phase.
2. The RWDS signal of the non-selected die of dual-die 128-Mb will always drive to
Hi-Z after CA phase.
3. The RWDS signal of the selected die of dual-die 128-Mb will drive to L after CA
phase.
Page 19 of 51
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Table 10. Configuration Register 0 (CR0) Bit Assignments (Continued)
CR0 Bit
Function
[2]
Hybrid Burst Enable
Settings (Binary)
0: Wrapped burst sequence to follow hybrid burst sequencing
1: Wrapped burst sequence in legacy wrapped burst manner (default)
This bit setting is effective only when the "Burst Type" bit in the Command/Address
register is set to '0', i.e. CA[45] = '0'; otherwise, it is ignored.
[1:0]
Burst Length
00 - 128 bytes
01 - 64 bytes
10- 16 bytes
11 - 32 bytes (default)
Wrapped Burst
A wrapped burst transaction accesses memory within a group of words aligned on a word boundary matching the length of the
configured group. Wrapped access groups can be configured as 16, 32, 64, or 128 bytes alignment and length. During wrapped
transactions, access starts at the CA selected location within the group, continues to the end of the configured word group aligned
boundary, then wraps around to the beginning location in the group, then continues back to the starting location. Wrapped bursts are
generally used for critical word first instruction or data cache line fill read accesses. Wrapped burst across die boundary is not
supported.
Hybrid Burst
The beginning of a hybrid burst will wrap within the target address wrapped burst group length before continuing to the next
half-page of data beyond the end of the wrap group. Continued access is in linear burst order until the transfer is ended by returning
CS# HIGH. This hybrid of a wrapped burst followed by a linear burst starting at the beginning of the next burst group, allows multiple
sequential address cache lines to be filled in a single access. The first cache line is filled starting at the critical word. Then the next
sequential line in memory can be read in to the cache while the first line is being processed. Hybrid burst across die boundary is not
supported.
Table 11. CR0[2] Control of Wrapped Burst Sequence
Bit
Default Value
CR0[2]
1b
Setting Details
Hybrid Burst Enable
CR0[2] = 0: Wrapped burst sequence to follow hybrid burst sequencing
CR0[2] = 1: Wrapped burst sequence in legacy wrapped burst manner
Table 12. Example Wrapped Burst Sequences (Addressing)
Burst Type
Wrap
Boundary
(bytes)
Start Address
(Hex)
Hybrid 128
128 Wrap
once then
Linear
XXXXXX03
Hybrid 64
64 Wrap
once then
Linear
XXXXXX02
Hybrid 64
64 Wrap
once then
Linear
XXXXXX2E
Hybrid 16
16 Wrap
once then
Linear
XXXXXX02
Document Number: 002-29418 Rev .**
Sequence of Byte Addresses (Hex) of Data Words
03, 04, 05, 06, 07, 08, 09, 0A, 0B, 0C, 0D, 0E, 0F, 10, 11, 12, 13, 14, 15, 16,
17, 18, 19, 1A, 1B, 1C, 1D, 1E, 1F, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 2A,
2B, 2C, 2D, 2E, 2F, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 3A, 3B, 3C, 3D, 3E,
3F, 00, 01, 02
(Wrap complete, now linear beyond the end of the initial 128 byte wrap group)
40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 4A, 4B, 4C, 4D, 4E, 4F, 50, 51, ...
02, 04, 06, 08, 0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 20, 22, 24, 26, 28, 2A, 2C,
2E, 30, 32, 34, 36, 38, 3A, 3C, 3E, 00
(wrap complete, now linear beyond the end of the initial 64 byte wrap group)
40, 42, 44, 46, 48, 4A, 4C, 4E, 50, 52, ...
2E, 30, 32, 34, 36, 38, 3A, 3C, 3E,
00, 02, 04, 06, 08, 0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 20, 22, 24, 26, 28, 2A,
2C, (wrap complete,
now linear beyond the end of the initial 64 byte wrap group)
40, 42, 44, 46, 48, 4A, 4B, 4C, 4D, 4E, 4F, 50, 52, ...
02, 04, 06, 08, 0A, 0C, 0E, 00
(wrap complete, now linear beyond the end of the initial 16 byte wrap group)
10, 12, 14, 16, 18, 1A, ..
Page 20 of 51
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Table 12. Example Wrapped Burst Sequences (Addressing) (Continued)
Wrap
Boundary
(bytes)
16 Wrap
once then
Linear
Burst Type
Hybrid 16
Start Address
(Hex)
XXXXXX0C
Hybrid 32
32 Wrap
once then
Linear
XXXXXX0A
Wrap 64
64
XXXXXX02
Wrap 64
64
XXXXXX2E
Wrap 16
Wrap 16
Wrap 32
Linear
16
16
32
Linear Burst
XXXXXX02
XXXXXX0C
XXXXXX0A
XXXXXX02
Sequence of Byte Addresses (Hex) of Data Words
0C, 0E, 00, 02, 04, 06, 08, 0A
(wrap complete, now linear beyond the end of the initial 16 byte wrap group)
10, 12, 14, 16, 18, 1A, ...
0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 00, 02, 04, 06, 08
(wrap complete, now linear beyond the end of the initial 32 byte wrap group)
20, 22, 24, 26, 28, 2A, ...
02, 04, 06, 08, 0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 20, 22, 24, 26, 28, 2A, 2C,
2E, 30, 32, 34, 36, 38, 3A, 3C, 3E, 00, ...
2E, 30, 32, 34, 36, 38, 3A, 3C, 3E,
00, 02, 04, 06, 08, 0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 20, 22, 24, 26, 28, 2A,
2C, 2E, 30, ….
02, 04, 06, 08, 0A, 0C, 0E, 00, ...
0C, 0E, 00, 02, 04, 06, 08, 0A, ...
0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 00, 02, 04, 06, 08, ...
02, 04, 06, 08, 0A, 0C, 0E, 10, 12, 14, 16, 18, 1A, 1C, 1E, 20, 22, ...
Initial Latency
Memory Space read and write transactions or Register Space read transactions require some initial latency to open the row selected
by the CA. This initial latency is tACC. The number of latency clocks needed to satisfy tACC depends on the clock input frequency can
vary from 3 to 7 clocks. The value in CR0[7:4] selects the number of clocks for initial latency. The default value is 7 clocks, allowing
for operation up to a maximum frequency of 200MHz prior to the host system setting a lower initial latency value that may be more
optimal for the system.
In the event a distributed refresh is required at the time a Memory Space read or write transaction or Register Space read transaction
begins, the RWDS signal goes High during the CA to indicate that an additional initial latency is being inserted to allow a refresh
operation to complete before opening the selected row.
Register Space write transactions always have zero initial latency. RWDS may be HIGH or LOW during the CA period. The level of
RWDS during the CA period does not affect the placement of register data immediately after the CA, as there is no initial latency
needed to capture the register data. A refresh operation may be performed in the memory array in parallel with the capture of register
data.
Fixed Latency
A configuration register option bit CR0[3] is provided to make all Memory Space read and write transactions or Register Space read
transactions require the same initial latency by always driving RWDS HIGH during the CA to indicate that two initial latency periods
are required. This fixed initial latency is independent of any need for a distributed refresh, it simply provides a fixed (deterministic)
initial latency for all of these transaction types. Fixed latency is the default POR or reset configuration.
Drive Strength
DQ and RWDS signal line loading, length, and impedance vary depending on each system design. Configuration register bits
CR0[14:12] provide a means to adjust the DQ[7:0] and RWDS signal output impedance to customize the DQ and RWDS signal
impedance to the system conditions to minimize high speed signal behaviors such as overshoot, undershoot, and ringing. The
default POR or reset configuration value is 000b to select the mid point of the available output impedance options.
The impedance values shown are typical for both pull-up and pull-down drivers at typical silicon process conditions, nominal
operating voltage (1.8 V or 3.0 V) and 50°C. The impedance values may vary from the typical values depending on the Process,
Voltage, and Temperature (PVT) conditions. Impedance will increase with slower process, lower voltage, or higher temperature.
Impedance will decrease with faster process, higher voltage, or lower temperature.
Each system design should evaluate the data signal integrity across the operating voltage and temperature ranges to select the best
drive strength settings for the operating conditions.
Deep Power Down
When the HyperRAM device is not needed for system operation, it may be placed in a very low power consuming state called Deep
Power Down (DPD), by writing 0 to CR0[15]. When CR0[15] is cleared to 0, the device enters the DPD state within tDPDIN time and
all refresh operations stop. The data in RAM is lost, (becomes invalid without refresh) during DPD state. Exiting DPD requires driving
CS# LOW then HIGH, POR, or a reset. Only CS# and RESET# signals are monitored during DPD mode. For additional details, see
Deep Power Down on page 26.
Document Number: 002-29418 Rev .**
Page 21 of 51
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Note: The 128-Mb HyperRAM is a stacked-die chip using two 64-Mb dice. Of the two dice, only one die at a time can be
programmed to enter the DPD mode. It is not feasible to program both the dice to enter the DPD mode together because entering
the DPD mode for one die would require CS# HIGH to LOW transition which would cause to exit the DPD mode in the other die, and
vice versa.
Configuration Register 1
Configuration Register 1 (CR1) is used to define the refresh array size, refresh rate and hybrid sleep for the HyperRAM device.
Configurable characteristics include:
■
Partial Array Refresh
■
Hybrid Sleep State
■
Refresh Rate
Table 13. Configuration Register 1 (CR1) Bit Assignments
CR1 Bit
Function
[15:8]
Reserved
FFh - Reserved (default)
These bits should always be set to FFh
[7]
Burst Type
1 - Linear Burst (default)
0 - Wrapped Burst
[6]
Master Clock Type
[5]
Hybrid Sleep
[4:2]
Partial Array
Refresh
[1:0]
Distributed Refresh
Interval (Read Only)
Setting (Binary)
1 - Single Ended - CK (default)
0 - Differential - CK#, CK
1 - Causes the device to enter Hybrid Sleep State
0 - Normal operation (default)
Only one die of the 128-Mb stack-die HyperRAM can be programmed to enter
Hybrid Sleep mode at a time.
000 - Full Array (default)
001 - Bottom 1/2 Array
010 - Bottom 1/4 Array
011 - Bottom 1/8 Array
100 - none
101 - Top 1/2 Array
110 - Top 1/4 Array
111 - Top 1/8 Array
10 - 1µs tCSM (Industrial Plus temperature range devices)
11 - Reserved
00 - Reserved
01 - 4µs tCSM (Industrial temperature range devices)
Burst Type
Two burst types, namely Linear and Wrapped, are supported in xSPI (Octal) mode by HyperRAM. CR1[7] selects which type to use.
Master Clock Type
Two clock types, namely single ended and differential, are supported. CR1[6] selects which type to use.
Partial Array Refresh
The partial array refresh configuration restricts the refresh operation in HyperRAM to a portion of the memory array specified by
CR1[5:3]. This reduces the standby current. The default configuration refreshes the whole array.
Hybrid Sleep (HS)
When the HyperRAM is not needed for system operation but data in the device needs to be retained, it may be placed in Hybrid
Sleep state to save more power. Enter Hybrid Sleep state by writing 0 to CR1[5]. Bringing CS# LOW will cause the device to exit HS
state and set CR1[5] to 1. Also, POR, or a hardware reset will cause the device to exit Hybrid Sleep state. Note that a POR or a
hardware reset disables refresh where the memory core data can potentially get lost.
Note: The 128-Mb HyperRAM is a stacked-die chip using two 64-Mb dice. Of the two dice, only one die at a time can be
programmed to enter the HS mode. It is not feasible to program both the dice to enter the HS mode together because entering the
HS mode for one die would require CS# HIGH to LOW transition which would cause to exit the HS mode in the other die, and vice
versa.
Document Number: 002-29418 Rev .**
Page 22 of 51
S70KL1283/S70KS1283
Distributed Refresh Interval
The DRAM array requires periodic refresh of all bits in the array. This can be done by the host system by reading or writing a location
in each row within a specified time limit. The read or write access copies a row of bits to an internal buffer. At the end of the access
the bits in the buffer are written back to the row in memory, thereby recharging (refreshing) the bits in the row of DRAM memory
cells.
HyperRAM devices include self-refresh logic that will refresh rows automatically. The automatic refresh of a row can only be done
when the memory is not being actively read or written by the host system. The refresh logic waits for the end of any active read or
write before doing a refresh, if a refresh is needed at that time. If a new read or write begins before the refresh is completed, the
memory will drive RWDS HIGH during the CA period to indicate that 2X initial latency time is required at the start of the new access
in order to allow the refresh operation to complete before starting the new access.
The required refresh interval for the entire memory array varies with temperature as shown in Table 14. This is the time within which
all rows must be refreshed. Refresh of all rows could be done as a single batch of accesses at the beginning of each interval, in
groups (burst refresh) of several rows at a time, spread throughout each interval, or as single row refreshes evenly distributed
throughout the interval. The self-refresh logic distributes single row refresh operations throughout the interval so that the memory is
not busy doing a burst of refresh operations for a long period, such that the burst refresh would delay host access for a long period.
Table 14. Array Refresh Interval per Temperature
Device Temperature (°C)
Array Refresh Interval (ms)
Array Rows
Recommended tCSM (µs)
85
64
8192
4
105
16
8192
1
The distributed refresh method requires that the host does not do burst transactions that are so long as to prevent the memory from
doing the distributed refreshes when they are needed. This sets an upper limit on the length of read and write transactions so that
the refresh logic can insert a refresh between transactions. This limit is called the CS# LOW maximum time (tCSM). The tCSM value is
determined by the array refresh interval divided by the number of rows in the array, then reducing this calculation by half to ensure
that a distributed refresh interval cannot be entirely missed by a maximum length host access starting immediately before a
distributed refresh is needed. Because tCSM is set to half the required distributed refresh interval, any series of maximum length host
accesses that delay refresh operations will catch up on refresh operations at twice the rate required by the refresh interval divided by
the number of rows.
The host system is required to respect the tCSM value by ending each transaction before violating tCSM. This can be done by host
memory controller logic splitting long transactions when reaching the tCSM limit, or by host system hardware or software not
performing a single read or write transaction that would be longer than tCSM.
As noted in Table 14 the array refresh interval is longer at lower temperatures such that tCSM could be increased to allow longer
transactions. The host system can either use the tCSM value from the table for the maximum operating temperature or, may
determine it dynamically by reading the read only CR1[1:0] bits in order to set the distributed refresh interval prior to every access.
Document Number: 002-29418 Rev .**
Page 23 of 51
S70KL1283/S70KS1283
Interface States
Table 15 describes the required value of each signal for each interface state.
Table 15. Interface States
Interface State
Power-Off
VCC / VCCQ
CS#
CK, CK#
DQ7-DQ0
RWDS
RESET#
< VLKO
X
X
HIGH-Z
HIGH-Z
X
X
X
HIGH-Z
HIGH-Z
X
X
X
HIGH-Z
HIGH-Z
L
Interface Standby
VCC / VCCQ min
VCC / VCCQ min
VCC / VCCQ min
H
X
HIGH-Z
HIGH-Z
H
CA
VCC / VCCQ min
L
T
Master Output
Valid
Y
H
Read Initial Access Latency
(data bus turn around period)
VCC / VCCQ min
L
T
HIGH-Z
L
H
Write Initial Access Latency
(RWDS turn around period)
VCC / VCCQ min
L
T
HIGH-Z
HIGH-Z
H
Read data transfer
VCC / VCCQ min
L
T
Slave Output
Valid
Slave Output
Valid
Z or T
H
Write data transfer with Initial
Latency
VCC / VCCQ min
L
T
Master Output
Valid
Master Output
Valid
X or T
H
Write data transfer without Initial
Latency [24]
VCC / VCCQ min
L
T
Master Output
Valid
Slave Output
L or HIGH-Z
H
Y
H
Power-On (Cold) Reset
Hardware (Warm) Reset
Active Clock Stop
[25]
Deep Power Down
Hybrid Sleep
VCC / VCCQ min
L
Idle
Master or
Slave Output
Valid or
HIGH-Z
VCC / VCCQ min
VCC / VCCQ min
H
X or T
HIGH-Z
HIGH-Z
H
H
X or T
HIGH-Z
HIGH-Z
H
Legend
L = VIL
H = VIH
X = either VIL or VIH
Y= either VIL or VIH or VOL or VOH
Z = either VOL or VOH
L/H = rising edge
H/L = falling edge
T = Toggling during information transfer
Idle = CK is LOW and CK# is HIGH
Valid = all bus signals have stable L or H level
Notes
24. Writes without initial latency (with zero initial latency), do not have a turn around period for RWDS. The HyperRAM device will always drive RWDS during the CA
period to indicate whether extended latency is required. Since master write data immediately follows the CA period the HyperRAM device may continue to drive
RWDS LOW or may take RWDS to HIGH-Z. The master must not drive RWDS during Writes with zero latency. Writes with zero latency do not use RWDS as a data
mask function. All bytes of write data are written (full word writes).
25. Active Clock Stop is described in Active Clock Stop on page 25. DPD is described in Hybrid Sleep on page 25.
Document Number: 002-29418 Rev .**
Page 24 of 51
S70KL1283/S70KS1283
Power Conservation Modes
Interface Standby
Standby is the default, low power, state for the interface while the device is not selected by the host for data transfer (CS# = HIGH).
All inputs, and outputs other than CS# and RESET# are ignored in this state.
Active Clock Stop
Design Note: Active Clock Stop feature is pending device characterization to determine if it will be supported.
The Active Clock Stop state reduces device interface energy consumption to the ICC6 level during the data transfer portion of a read
or write operation. The device automatically enables this state when clock remains stable for tACC + 30 ns. While in Active Clock
Stop state, read data is latched and always driven onto the data bus. ICC6 shown in DC Characteristics on page 29.
Active Clock Stop state helps reduce current consumption when the host system clock has stopped to pause the data transfer. Even
though CS# may be LOW throughout these extended data transfer cycles, the memory device host interface will go into the Active
Clock Stop current level at tACC + 30 ns. This allows the device to transition into a lower current state if the data transfer is stalled.
Active read or write current will resume once the data transfer is restarted with a toggling clock. The Active Clock Stop state must not
be used in violation of the tCSM limit. CS# must go HIGH before tCSM is violated. Clock can be stopped during any portion of the
active transaction as long as it is in the LOW state. Note that it is recommended to avoid stopping the clock during register access.
Figure 16. Active Clock Stop During Read Transaction (DDR)
CS#
ClockStopped
CK#, CK
LatencyCount (1X)
High: 2XLatencyCount
Low: 1XLatencyCount
RWDS
RWDS&Dataareedgealigned
CMD
[7:0]
DQ[7:0]
CMD
[7:0]
ADR
[31:24]
ADR
[23:16]
ADR
[15:8]
ADR
[7:0]
DoutA
[7:0]
DoutB
[7:0]
Command- Address
(Host drivesDQ[7:0] andMemorydrivesRWDS)
Output Driven
DoutA+1
[7:0]
DoutB+1
[7:0]
ReadData
Hybrid Sleep
In the Hybrid Sleep (HS) state, the current consumption is reduced (IHS). HS state is entered by writing a 0 to CR1[5]. The device
reduces power within tHSIN time. The data in Memory Space and Register Space is retained during HS state. Bringing CS# LOW will
cause the device to exit HS state and set CR1[5] to 1. Also, POR, or a hardware reset will cause the device to exit Hybrid Sleep
state. Note that a POR or a hardware reset disables refresh where the memory core data can potentially get lost. Returning to
Standby state requires tEXITHS time. Following the exit from HS due to any of these events, the device is in the same state as
entering Hybrid Sleep.
Figure 17. Enter HS Transaction[26]
CS#
C K#, C K
H ig h : 2 X L a te n cy C o u n t
L o w : 1 X L a te n cy C o u n t
RW DS
t H S IN
D Q [7 :0]
CMD
[7 :0 ]
CMD
[7 :0 ]
ADR
[3 1 :2 4 ]
ADR
[2 3 :1 6]
ADR
[1 5 :8 ]
C o m m a n d - A d d re ss
(H o st d rive s D Q [7 :0], M e m o ry d rive s R W D S)
ADR
[7 :0 ]
RG
[1 5:8 ]
RG
[7:0 ]
W rite D a ta
C R 0 V a lu e
E n te r H yb rid S le e p
t H S IN
HS
Figure 18. Exit HS Transaction
CS#
tCSHS
tEXTHS
Note
26. The initial latency "Low = 1x Latency Count" is not applicable in dual-die, 128-Mb HyperRAM. Write with no latency transaction is used for register writes only.
Document Number: 002-29418 Rev .**
Page 25 of 51
S70KL1283/S70KS1283
Table 16. Hybrid Sleep Timing Parameters
Parameter
Description
Min
Max
Unit
tHSIN
Hybrid Sleep CR1[5] = 0 register write to DPD power level
3
µs
tCSHS
CS# Pulse Width to Exit HS
60
3000
ns
tEXTHS
CS# Exit Hybrid Sleep to Standby wakeup time
100
µs
Deep Power Down
In the Deep Power Down (DPD) state, current consumption is driven to the lowest possible level (IDPD). DPD state is entered by
writing a 0 to CR0[15]. The device reduces power within tDPDIN time and all refresh operations stop. The data in Memory Space is
lost, (becomes invalid without refresh) during DPD state. Driving CS# LOW then HIGH will cause the device to exit DPD state. Also,
POR, or a hardware reset will cause the device to exit DPD state. Returning to Standby state requires tEXTDPD time. Returning to
Standby state following a POR requires tVCS time, as with any other POR. Following the exit from DPD due to any of these events,
the device is in the same state as following POR.
Note In xSPI (Octal), Deep Power Down transaction or Write Any register transaction can be used to enter DPD.
Figure 19. Enter DPD Transaction[27]
CS#
C K#, CK
RW DS
H ig h: 2X La te ncy C o u nt
L o w : 1 X La ten cy C o u nt
t D P D IN
D Q [7 :0]
CMD
[7 :0]
CM D
[7:0]
ADR
[31 :2 4]
ADR
[2 3:16]
ADR
[1 5:8 ]
C o m m a nd - A d d re ss
(H o st drive s D Q [7:0], M e m o ry d rives R W D S)
ADR
[7 :0]
RG
[1 5:8]
RG
[7:0 ]
W rite D a ta
C R 0 V alu e
E n ter D ee p P o w e r D o w n
t D P D IN
D PD
Figure 20. Exit DPD Transaction
CS#
tCSDPD
tEXTDPD
Table 17. Deep Power Down Timing Parameters
Parameter
Description
tDPDIN
Deep Power Down CR0[15] = 0 register write to DPD power level
tCSDPD
CS# Pulse Width to Exit DPD
tEXTDPD
CS# Exit Deep Power Down to Standby wakeup time
Min
Max
Unit
3
µs
200
3000
ns
150
µs
Note
27. The initial latency "Low = 1x Latency Count" is not applicable in dual-die, 128-Mb HyperRAM. Write with no latency transaction is used for register writes only.
Document Number: 002-29418 Rev .**
Page 26 of 51
S70KL1283/S70KS1283
Electrical Specifications
Absolute Maximum Ratings
Storage Temperature Plastic Packages
Ambient Temperature with Power Applied
65 °C to +150 °C
65 °C to +115 °C
Voltage with Respect to Ground
All signals[28]
0.5V to +(VCC + 0.5V)
Output Short Circuit Current[29]
100 mA
VCC, VCCQ
0.5V to +4.0V
Input Signal Overshoot
During DC conditions, input or I/O signals should remain equal to or between VSS and VCC. During voltage transitions, inputs or I/Os
may negative overshoot VSS to 1.0V or positive overshoot to VCC +1.0V, for periods up to 20 ns.
Figure 21. Maximum Negative Overshoot Waveform
VSSQ to VCCQ
- 1.0V
≤ 20 ns
Figure 22. Maximum Positive Overshoot Waveform
≤ 20 ns
VCCQ + 1.0V
VSSQ to VCCQ
Latch-up Characteristics
Table 18. Latch-up Specification[31]
Description
Min
Max
Unit
Input voltage with respect to VSSQ on all input only connections
1.0
VCCQ + 1.0
V
Input voltage with respect to VSSQ on all I/O connections
1.0
VCCQ + 1.0
V
VCCQ Current
100
+100
mA
Notes
28. Minimum DC voltage on input or I/O signal is -1.0V. During voltage transitions, input or I/O signals may undershoot VSS to -1.0V for periods of up to 20 ns. See
Figure 21. Maximum DC voltage on input or I/O signals is VCC +1.0V. During voltage transitions, input or I/O signals may overshoot to VCC +1.0V for periods up to
20 ns. See Figure 22.
29. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
30. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum
rating conditions for extended periods may affect device reliability.
31. Excludes power supplies VCC/VCCQ. Test conditions: VCC = VCCQ, one connection at a time tested, connections not being tested are at VSS.
Document Number: 002-29418 Rev .**
Page 27 of 51
S70KL1283/S70KS1283
Operating Ranges
Operating ranges define those limits between which the functionality of the device is guaranteed.
Temperature Ranges
Parameter
Ambient Temperature
Symbol
TA
Spec
Device
Unit
Min
Max
Industrial (I)
–40
85
°C
Industrial Plus (V)
–40
105
°C
Automotive, AEC-Q100 Grade 3 (A)
–40
85
°C
Automotive, AEC-Q100 Grade 2 (B)
–40
105
°C
Power Supply Voltages
Description
Min
Max
Unit
1.8 V VCC Power Supply
1.7
2.0
V
3.0 V VCC Power Supply
2.7
3.6
V
Document Number: 002-29418 Rev .**
Page 28 of 51
S70KL1283/S70KS1283
DC Characteristics
Table 19. DC Characteristics (CMOS Compatible)
Parameter
ILI1
ILI2
ILI3
ILI4
ICC1
ICC2
Description
Input Leakage Current
3.0 V Device Reset Signal High Only
Input Leakage Current
1.8 V Device Reset Signal High Only
Input Leakage Current
3.0 V Device Reset Signal Low Only[33]
Input Leakage Current
1.8 V Device Reset Signal Low Only[33]
VCC Active Read Current
VCC Active Write Current
VCC Standby Current (-40 °C to +85 °C)
ICC4I
VCC Standby Current (-40 °C to +85 °C)
Test Conditions
VIN = VSS to VCC,
VCC = VCC max
VIN = VSS to VCC,
VCC = VCC max
VIN = VSS to VCC,
VCC = VCC max
VIN = VSS to VCC,
VCC = VCC max
CS# = VIL, @200 MHz,
VCC = 2.0 V
CS# = VIL, @166 MHz,
VCC = 3.6 V
CS# = VSS, @200 MHz,
VCC = 3.6V
CS# = VIL, @200 MHz,
VCC = 2.0 V
CS# = VIL, @166 MHz,
VCC = 3.6 V
CS# = VSS, @200 MHz,
VCC = 3.6V
128 Mb
Unit
Min
Typ[32]
Max
2
µA
2
µA
15
µA
15
µA
30
50
mA
30
56
mA
30
60
mA
30
50
mA
30
56
mA
30
60
mA
CS# = VCC, VCC = 2.0 V; Full Array
160
440
µA
CS# = VCC, VCC = 2.0 V; Bottom
1/2 Array
CS# = VCC, VCC = 2.0 V; Bottom
1/4 Array
CS# = VCC, VCC = 2.0 V; Bottom
1/8 Array
CS# = VCC, VCC = 2.0 V; Top 1/2
Array
CS# = VCC, VCC = 2.0 V; Top 1/4
Array
CS# = VCC, VCC = 2.0 V; Top 1/8
Array
420
µA
410
µA
400
µA
420
µA
410
µA
400
µA
CS# = VCC, VCC = 3.6 V; Full Array
180
500
µA
CS# = VCC, VCC = 3.6 V; Bottom
1/2 Array
CS# = VCC, VCC = 3.6 V; Bottom
1/4 Array
CS# = VCC, VCC = 3.6 V; Bottom
1/8 Array
CS# = VCC, VCC = 3.6 V; Top 1/2
Array
CS# = VCC, VCC = 3.6 V; Top 1/4
Array
CS# = VCC, VCC = 3.6 V; Top 1/8
Array
480
µA
450
µA
440
µA
480
µA
450
µA
440
µA
Notes
32. Not 100% tested.
33. Only one of the two-die 128 Mb chip can enter DPD mode, while the other die remains in standby mode. RESET# LOW initiates exits from DPD state and initiates
the draw of ICC5 reset current, making ILI during RESET# LOW insignificant.
Document Number: 002-29418 Rev .**
Page 29 of 51
S70KL1283/S70KS1283
Table 19. DC Characteristics (CMOS Compatible) (Continued)
Parameter
Description
Test Conditions
128 Mb
Min
CS# = VCC, VCC = 2.0 V; Full Array
VCC Standby Current (-40 °C to +105 °C)
ICC4P
VCC Standby Current (-40 °C to +105 °C)
ICC5
Reset Current
ICC6I
Active Clock Stop Current (40 °C to +85 °C)
ICC6IP
Active Clock Stop Current (40 °C to +105 °C)
ICC7
VCC Current during power up[32]
IDPD[33]
Deep Power Down Current 1.8 V
(40 °C to +85 °C)
Deep Power Down Current 3.0 V
(40 °C to +85 °C)
Deep Power Down Current 1.8 V
(40 °C to +105 °C)
Deep Power Down Current 3.0 V
(40 °C to +105 °C)
IDPD[33]
IDPD[33]
IDPD[33]
Max
160
660
µA
630
µA
615
µA
600
µA
630
µA
615
µA
600
µA
750
µA
720
µA
675
µA
660
µA
720
µA
675
µA
660
µA
CS# = VCC, VCC = 2.0 V; Bottom
1/2 Array
CS# = VCC, VCC = 2.0 V; Bottom
1/4 Array
CS# = VCC, VCC = 2.0 V; Bottom
1/8 Array
CS# = VCC, VCC = 2.0 V; Top 1/2
Array
CS# = VCC, VCC = 2.0 V; Top 1/4
Array
CS# = VCC, VCC = 2.0 V; Top 1/8
Array
CS# = VCC, VCC = 3.6 V; Full Array
CS# = VCC, VCC = 3.6 V; Bottom
1/2 Array
CS# = VCC, VCC = 3.6 V; Bottom
1/4 Array
CS# = VCC, VCC = 3.6 V; Bottom
1/8 Array
CS# = VCC, VCC = 3.6 V; Top 1/2
Array
CS# = VCC, VCC = 3.6 V; Top 1/4
Array
CS# = VCC, VCC = 3.6 V; Top 1/8
Array
CS# = VIH,
RESET# = VIL,
VCC = VCC max
CS# = VIL,
RESET# = VIH,
VCC = VCC max
CS# = VIL,
RESET# = VIH,
VCC = VCC max
CS# = VIH,
VCC = VCC max,
VCC = VCCQ = 2.0 V or 3.6 V
Unit
Typ[32]
180
1.5
mA
10
13
mA
10
19
mA
70
mA
CS# = VIH, VCC = 2.0 V
250
µA
CS# = VIH, VCC = 3.6 V
220
µA
CS# = VIH, VCC = 2.0 V
330
µA
CS# = VIH, VCC = 3.6 V
360
µA
Notes
32. Not 100% tested.
33. Only one of the two-die 128 Mb chip can enter DPD mode, while the other die remains in standby mode. RESET# LOW initiates exits from DPD state and initiates
the draw of ICC5 reset current, making ILI during RESET# LOW insignificant.
Document Number: 002-29418 Rev .**
Page 30 of 51
S70KL1283/S70KS1283
Table 19. DC Characteristics (CMOS Compatible) (Continued)
Parameter
Description
Hybrid Sleep Current (-40 °C to +85 °C)
Hybrid Sleep Current (-40 °C to +85 °C)
IHS[33]
Test Conditions
Hybrid Sleep Current (-40 °C to +105 °C)
Unit
Typ[32]
Max
105
420
µA
CS# = VCC, VCC = 2.0 V; Full Array
-
CS# = VCC, VCC = 2.0 V; Bottom
1/2 Array
CS# = VCC, VCC = 2.0 V; Bottom
1/4 Array
CS# = VCC, VCC = 2.0 V; Bottom
1/8 Array
CS# = VCC, VCC = 2.0 V; Top 1/2
Array
CS# = VCC, VCC = 2.0 V; Top 1/4
Array
CS# = VCC, VCC = 2.0 V; Top 1/8
Array
-
370
µA
-
330
µA
-
310
µA
-
370
µA
-
330
µA
-
310
µA
CS# = VCC, VCC = 3.6 V; Full Array
-
480
µA
-
430
µA
-
370
µA
-
340
µA
-
430
µA
-
370
µA
-
340
µA
630
µA
-
570
µA
-
510
µA
-
460
µA
-
570
µA
-
510
µA
-
460
µA
690
µA
CS# = VCC, VCC = 3.6 V; Bottom
1/2 Array
CS# = VCC, VCC = 3.6 V; Bottom
1/4 Array
CS# = VCC, VCC = 3.6 V; Bottom
1/8 Array
CS# = VCC, VCC = 3.6 V; Top 1/2
Array
CS# = VCC, VCC = 3.6 V; Top 1/4
Array
CS# = VCC, VCC = 3.6 V; Top 1/8
Array
CS# = VCC, VCC = 2.0 V; Full Array
Hybrid Sleep Current (-40 °C to +105 °C)
128 Mb
Min
CS# = VCC, VCC = 2.0 V; Bottom
1/2 Array
CS# = VCC, VCC = 2.0 V; Bottom
1/4 Array
CS# = VCC, VCC = 2.0 V; Bottom
1/8 Array
CS# = VCC, VCC = 2.0 V; Top 1/2
Array
CS# = VCC, VCC = 2.0 V; Top 1/4
Array
CS# = VCC, VCC = 2.0 V; Top 1/8
Array
-
115
185
CS# = VCC, VCC = 3.6 V; Full Array
-
CS# = VCC, VCC = 3.6 V; Bottom
1/2 Array
CS# = VCC, VCC = 3.6 V; Bottom
1/4 Array
-
630
µA
-
550
µA
CS# = VCC, VCC = 3.6 V; Bottom
1/8 Array
CS# = VCC, VCC = 3.6 V; Top 1/2
Array
CS# = VCC, VCC = 3.6 V; Top 1/4
Array
CS# = VCC, VCC = 3.6 V; Top 1/8
Array
-
520
µA
-
630
µA
-
550
µA
-
520
µA
215
Notes
32. Not 100% tested.
33. Only one of the two-die 128 Mb chip can enter DPD mode, while the other die remains in standby mode. RESET# LOW initiates exits from DPD state and initiates
the draw of ICC5 reset current, making ILI during RESET# LOW insignificant.
Document Number: 002-29418 Rev .**
Page 31 of 51
S70KL1283/S70KS1283
Table 19. DC Characteristics (CMOS Compatible) (Continued)
Parameter
VIL
VIH
VOL
VOH
Description
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Test Conditions
128 Mb
Unit
Min
Typ[32]
Max
0.15 x VCCQ
0.70 x VCCQ
VCCQ-0.20
0.35 x VCCQ
1.15 x VCCQ
0.20
IOL = 100 µA for DQ[7:0]
IOH = 100 µA for DQ[7:0]
V
V
V
V
Notes
32. Not 100% tested.
33. Only one of the two-die 128 Mb chip can enter DPD mode, while the other die remains in standby mode. RESET# LOW initiates exits from DPD state and initiates
the draw of ICC5 reset current, making ILI during RESET# LOW insignificant.
Capacitance Characteristics
Table 20. 1.8 V Capacitive Characteristics[34, 35, 36]
Description
Parameter
128 Mb
Max
Unit
Input Capacitance (CK, CK#, CS#)
CI
6
pF
Delta Input Capacitance (CK, CK#)
CID
0.50
pF
Output Capacitance (RWDS)
CO
6
pF
IO Capacitance (DQx)
CIO
6
pF
CIOD
0.50
pF
IO Capacitance Delta (DQx)
Table 21. 3.0 V Capacitive Characteristics[34, 35, 36]
Description
Parameter
128 Mb
Max
Unit
Input Capacitance (CK, CK#, CS#)
CI
6
pF
Delta Input Capacitance (CK, CK#)
CID
0.50
pF
Output Capacitance (RWDS)
CO
6
pF
IO Capacitance (DQx)
IO Capacitance Delta (DQx)
CIO
6
pF
CIOD
0.50
pF
Notes
34. These values are guaranteed by design and are tested on a sample basis only.
35. Contact capacitance is measured according to JEP147 procedure for measuring capacitance using a vector network analyzer. VCC, VCCQ are applied and all other
signals (except the signal under test) floating. DQ’s should be in the high impedance state.
36. Note that the capacitance values for the CK, CK#, RWDS and DQx signals must have similar capacitance values to allow for signal propagation time matching in the
system. The capacitance value for CS# is not as critical because there are no critical timings between CS# going active (LOW) and data being presented on the DQs
bus.
Document Number: 002-29418 Rev .**
Page 32 of 51
S70KL1283/S70KS1283
Power-up Initialization
HyperRAM products include an on-chip voltage sensor used to launch the power-up initialization process. VCC and VCCQ must be
applied simultaneously. When the power supply reaches a stable level at or above VCC(min), the device will require tVCS time to
complete its self-initialization process.
The device must not be selected during power-up. CS# must follow the voltage applied on VCCQ until VCC (min) is reached during
power-up, and then CS# must remain high for a further delay of tVCS. A simple pull-up resistor from VCCQ to Chip Select (CS#) can
be used to insure safe and proper power-up.
If RESET# is LOW during power up, the device delays start of the tVCS period until RESET# is HIGH. The tVCS period is used
primarily to perform refresh operations on the DRAM array to initialize it.
When initialization is complete, the device is ready for normal operation.
Figure 23. Power-up with RESET# HIGH
Vcc_VccQ
VCC Minimum
Device
Access Allowed
tVCS
CS#
RESET#
Figure 24. Power-up with RESET# LOW
Vcc_VccQ
VCC Minimum
CS#
Device
Access Allowed
tVCS
RESET#
Table 22. Power Up and Reset Parameters[37, 38, 39]
Parameter
Description
Min
Max
Unit
VCC
1.8 V VCC Power Supply
1.7
2.0
V
VCC
3.0 V VCC Power Supply
2.7
3.6
V
tVCS
VCC and VCCQ minimum and RESET# HIGH to first
access
150
µs
Notes
37. Bus transactions (read and write) are not allowed during the power-up reset time (tVCS).
38. VCCQ must be the same voltage as VCC.
39. VCC ramp rate may be non-linear.
Document Number: 002-29418 Rev .**
Page 33 of 51
S70KL1283/S70KS1283
Power Down
HyperRAM devices are considered to be powered-off when the array power supply (VCC) drops below the VCC Lock-Out voltage
(VLKO). During a power supply transition down to the VSS level, VCCQ should remain less than or equal to VCC. At the VLKO level, the
HyperRAM device will have lost configuration or array data.
VCC must always be greater than or equal to VCCQ (VCC VCCQ).
During Power-Down or voltage drops below VLKO, the array power supply voltages must also drop below VCC Reset (VRST) for a
Power Down period (tPD) for the part to initialize correctly when the power supply again rises to VCC minimum. See Figure 25.
If during a voltage drop the VCC stays above VLKO the part will stay initialized and will work correctly when VCC is again above VCC
minimum. If VCC does not go below and remain below VRST for greater than tPD, then there is no assurance that the POR process
will be performed. In this case, a hardware reset will be required ensure the device is properly initialized.
Figure 25. Power Down or Voltage Drop
VCC (Max)
VCC
No Device Access Allowed
VCC (Min)
tVCS
VLKO
Device Access
Allowed
VRST
t PD
Time
The following section describes HyperRAM device dependent aspects of power down specifications.
Table 23. 1.8 V Power-Down Voltage and Timing[40]
Symbol
Min
Max
Unit
VCC
VCC Power Supply
1.7
2.0
V
VLKO
VCC Lock-out below which re-initialization is required
1.5
V
VRST
VCC Low Voltage needed to ensure initialization will occur
0.7
V
50
µs
Min
Max
Unit
tPD
Parameter
Duration of VCC VRST
Table 24. 3.0 V Power-Down Voltage and Timing[40]
Symbol
Parameter
VCC
VCC Power Supply
2.7
3.6
V
VLKO
VCC Lock-out below which re-initialization is required
2.4
V
VRST
VCC Low Voltage needed to ensure initialization will occur
0.7
V
50
µs
tPD
Duration of VCC VRST
Note
40. VCC ramp rate can be non-linear.
Document Number: 002-29418 Rev .**
Page 34 of 51
S70KL1283/S70KS1283
Hardware Reset
The RESET# input provides a hardware method of returning the device to the standby state.
During tRPH the device will draw ICC5 current. If RESET# continues to be held LOW beyond tRPH, the device draws CMOS standby
current (ICC4). While RESET# is LOW (during tRP), and during tRPH, bus transactions are not allowed.
A hardware reset will do the following:
■
Cause the configuration registers to return to their default values
■
Halt self-refresh operation while RESET# is LOW - memory array data is considered as invalid
■
Force the device to exit the Hybrid Sleep state
■
Force the device to exit the Deep Power Down state
After RESET# returns HIGH, the self-refresh operation will resume. Because self-refresh operation is stopped during RESET# LOW,
and the self-refresh row counter is reset to its default value, some rows may not be refreshed within the required array refresh interval
per Table 14. This may result in the loss of DRAM array data during or immediately following a hardware reset. The host system should
assume DRAM array data is lost after a hardware reset and reload any required data.
Figure 26. Hardware Reset Timing Diagram
tRP
RESET#
tRH
tRPH
CS#
Table 25. Power-Up and Reset Parameters
Parameter
Description
Min
Max
Unit
tRP
RESET# Pulse Width
200
ns
tRH
Time between RESET# (HIGH) and CS# (LOW)
200
ns
tRPH
RESET# LOW to CS# LOW
400
ns
Software Reset
The software reset provides a software method of returning the device to the standby state. During tSR the device will draw ICC5
current.
A software reset will do the following:
■
Cause the configuration registers to return to their default values
■
Halt self-refresh operation during the software reset process - memory array data is considered as invalid
After software reset finishes, the self-refresh operation will resume. Because self-refresh operation is stopped, and the self-refresh
row counter is reset to its default value, some rows may not be refreshed within the required array refresh interval per Table 14. This
may result in the loss of DRAM array data during or immediately following a software reset. The host system should assume DRAM
array data is lost after a software reset and reload any required data.
Table 26. Software Reset Timing
Parameter
tSR
Description
Software Reset transaction CS# HIGH to Device in
Standby
Document Number: 002-29418 Rev .**
Min
Max
Unit
400
ns
Page 35 of 51
S70KL1283/S70KS1283
Timing Specifications
The following section describes HyperRAM device dependent aspects of timing specifications.
Key to Switching Waveforms
Valid_High_or_Low
High_to_Low_Transition
Low_to_High_Transition
Invalid
High_Impedance
AC Test Conditions
Figure 27. Test Setup
Device
Under
Test
CL
Table 27. Test Specification[42]
Parameter
All Speeds
Units
15
pF
Minimum Input Rise and Fall Slew Rates (1.8 V)[41]
1.13
V/ns
Minimum Input Rise and Fall Slew Rates (3.0 V)[41]
2.06
V/ns
0.0-VCCQ
V
Input timing measurement reference levels
VCCQ/2
V
Output timing measurement reference levels
VCCQ/2
V
Output Load Capacitance, CL
Input Pulse Levels
Figure 28. Input Waveforms and Measurement Levels[43]
VccQ
Input VccQ / 2
Measurement Level
VccQ / 2 Output
Vss
Notes
41. All AC timings assume this input slew rate.
42. Input and output timing is referenced to VCCQ/2 or to the crossing of CK/CK#.
43. Input timings for the differential CK/CK# pair are measured from clock crossings.
Document Number: 002-29418 Rev .**
Page 36 of 51
S70KL1283/S70KS1283
CLK Characteristics
Figure 29. Clock Characteristics
tCK
tCKHP
tCKHP
CK#
VIX (Max)
VCCQ / 2
VIX (Min)
CK
Table 28. Clock Timings[44, 45, 46]
Parameter[47, 48]
Symbol
200 MHZ
166 MHZ
Unit
Min
Max
Min
Max
tCK
5
–
6
–
ns
CK Half Period - Duty Cycle
tCKHP
0.45
0.55
0.45
0.55
tCK
CK Half Period at Frequency
Min = 0.45 tCK Min
Max = 0.55 tCK Min
tCKHP
2.25
2.75
2.7
3.3
ns
CK Period
Table 29. Clock AC/DC Electrical Characteristics[49, 50]
Parameter
Symbol
Min
Max
Unit
VIN
–0.3
VCCQ + 0.3
V
DC Input Differential Voltage
VID(DC)
VCCQ x 0.4
VCCQ + 0.6
V
AC Input Differential Voltage
VID(AC)
VCCQ x 0.6
VCCQ + 0.6
V
VIX
VCCQ x 0.4
VCCQ x 0.6
V
DC Input Voltage
AC Differential Crossing Voltage
Notes
44. Clock jitter of ±5% is permitted
45. Minimum Frequency (Maximum tCK) is dependent upon maximum CS# Low time (tCSM), Initial Latency, and Burst Length.
46. CK and CK# input slew rate must be 1 V/ns (2 V/ns if measured differentially).
47. CK# is only used on the 1.8V device and is shown as a dashed waveform.
48. The 3-V device uses a single-ended clock input.
49. VID is the magnitude of the difference between the input level on CK and the input level on CK#.
50. The value of VIX is expected to equal VCCQ/2 of the transmitting device and must track variations in the DC level of VCCQ.
Document Number: 002-29418 Rev .**
Page 37 of 51
S70KL1283/S70KS1283
AC Characteristics
Read Transactions
Table 30. HyperRAM Specific Read Timing Parameters
Parameter
Chip Select High Between Transactions - 1.8 V
Chip Select High Between Transactions - 3.0 V
HyperRAM Read-Write Recovery Time - 1.8 V
HyperRAM Read-Write Recovery Time - 3.0 V
Chip Select Setup to next CK Rising Edge
Data Strobe Valid - 1.8 V
Data Strobe Valid - 3.0 V
Input Setup - 1.8 V
Input Setup - 3.0 V
Input Hold - 1.8 V
Input Hold - 3.0 V
HyperRAM Read Initial Access Time - 1.8 V
HyperRAM Read Initial Access Time- 3.0 V
Clock to DQs Low Z
CK transition to DQ Valid - 1.8 V
CK transition to DQ Valid - 3.0 V
CK transition to DQ Invalid - 1.8 V
CK transition to DQ Invalid - 3.0 V
Data Valid (tDV min = the lesser of: tCKHP min - tCKD max + tCKDI max)
or tCKHP min - tCKD min + tCKDI min) - 1.8V
Data Valid (tDV min = the lesser of: tCKHP min - tCKD max + tCKDI max)
or tCKHP min - tCKD min + tCKDI min) - 3.0V
CK transition to RWDS Valid - 1.8 V
CK transition to RWDS Valid - 3.0 V
RWDS transition to DQ Valid - 1.8 V
RWDS transition to DQ Valid - 3.0 V
RWDS transition to DQ Invalid - 1.8 V
RWDS transition to DQ Invalid - 3.0 V
Chip Select Hold After CK Falling Edge
Chip Select Inactive to RWDS High-Z - 1.8 V
Chip Select Inactive to RWDS High-Z - 3.0 V
Chip Select Inactive to DQ High-Z - 1.8 V
Chip Select Inactive to DQ High-Z - 3.0 V
Refresh Time - 1.8V
Refresh Time - 3.0V
CK transition to RWDS Low @CA phase @Read - 1.8 V
CK transition to RWDS Low @CA phase @Read - 3.0 V
Document Number: 002-29418 Rev .**
Symbol
tCSHI
tRWR
tCSS
tDSV
tIS
tIH
tACC
tDQLZ
tCKD
tCKDI
200 MHZ
166 MHZ
Min
Max
Min
Max
6
–
6
–
6
–
6
–
35
–
36
–
35
–
36
–
4.0
–
3
–
–
5.0
–
12
–
6.5
–
12
0.5
–
0.6
–
0.5
–
0.6
–
0.5
–
0.6
–
0.5
–
0.6
–
35
–
36
–
35
–
36
–
0
–
0
–
1
5.0
1
5.5
1
6.5
1
7
0
4.2
0
4.6
0.5
5.7
0.5
5.6
1.45
–
1.8
–
1.45
–
1.3
–
–
5.0
1
5.5
–
6.5
1
7
–0.4
+0.4
–0.45
+0.45
–0.4
+0.4
–0.8
+0.8
–0.4
+0.4
–0.45
+0.45
–0.4
+0.4
–0.8
+0.8
0
–
0
–
–
5.0
–
6
–
6.5
–
7
–
5
–
6
–
6.5
–
7
35
–
36
–
35
–
36
–
1
5.5
1
5.5
1
7
1
7
tDV
tCKDS
tDSS
tDSH
tCSH
tDSZ
tOZ
tRFH
tCKDSR
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Page 38 of 51
S70KL1283/S70KS1283
Figure 30. Read Timing Diagram[51]
t CSHI
t CSM
CS#
t CSS
t CSH
t RWR =Read Write Recovery
t ACC = Access
t CSS
CK , CK#
t DSV
RWDS
4 cycle latency
t CKDS
t DSZ
High = 2x Latency Count
Low = 1x Latency Count
t DSS
t IS
DQ[7:0]
t IH
47:40 39:32 31:24 23:16 15:8
t DQLZ
Dn
A
7:0
Command-Address
t CKD
RWDS and Data
are edge aligned
Host drives DQ[7:0] and Memory drives RWDS
t OZ
t DSH
Dn
B
Dn+1
A
Dn+1
B
Memory drives DQ[7:0]
and RWDS
Figure 31. Read Timing Diagram — With Initial Latency
tCKDS
tCKD
Note
51. The initial latency "Low = 1x Latency Count" is not applicable in dual-die, 128 Mb HyperRAM.
Document Number: 002-29418 Rev .**
Page 39 of 51
S70KL1283/S70KS1283
Write Transactions
Table 31. Write Timing Parameters
Parameter
Symbol
200 MHz
166 MHz
Unit
Min
Max
Min
Max
36
ns
4
4
µs
1
1
µs
0
µs
Read-Write Recovery Time
tRWR
35
Access Time
tACC
35
Refresh Time
tRFH
35
Chip Select Maximum Low Time (85 °C)
tCSM
Chip Select Maximum Low Time (105 °C)
tCSM
RWDS Data Mask Valid
tDMV
0
36
36
ns
ns
Figure 32. Write Timing Diagram[51]
Document Number: 002-29418 Rev .**
Page 40 of 51
S70KL1283/S70KS1283
Physical Interface
FBGA 24-Ball 5 x 5 Array Footprint
HyperRAM devices are provided in Fortified Ball Grid Array (FBGA), 1 mm pitch, 24-ball, 5 x 5 ball array footprint, with 6mm x 8mm
body.
Figure 33. 24-Ball FBGA, 6 x 8 mm, 5 x 5 Ball Footprint, Top View
1
2
3
4
5
RFU
CS#
CK#
CK
Vss
Vcc
RFU
VssQ
RFU
RWDS
DQ2
RFU
VccQ
DQ1
DQ0
DQ3
DQ4
DQ7
DQ6
DQ5
VccQ
VssQ
A
RESET# RFU
B
C
D
E
Document Number: 002-29418 Rev .**
Page 41 of 51
S70KL1283/S70KS1283
Physical Diagram
Figure 34. 24-Ball BGA 8.0 mm × 6.0 mm × 1.0 mm (E2A024)
NOTES:
DIMENSIONS
SYMBOL
MIN.
NOM.
MAX.
1.
2.
ALL DIMENSIONS ARE IN MILLIMETERS.
3.
BALL POSITION DESIGNATION PER JEP95, SECTION 3, SPP-020.
4.
"e" REPRESENTS THE SOLDER BALL GRID PITCH.
5.
SYMBOL "MD" IS THE BALL MATRIX SIZE IN THE "D" DIRECTION.
A
-
-
1.00
A1
0.20
-
-
D
8.00 BSC
E
6.00 BSC
D1
4.00 BSC
E1
4.00 BSC
MD
5
ME
5
N
SYMBOL "ME" IS THE BALL MATRIX SIZE IN THE "E" DIRECTION.
N IS THE NUMBER OF POPULATED SOLDER BALL POSITIONS FOR MATRIX SIZE MD X ME.
24
b
eE
0.35
0.40
1.00 BSC
SD
0.00 BSC
SE
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
"SD" AND "SE" ARE MEASURED WITH RESPECT TO DATUMS A AND B AND DEFINE THE
0.45
POSITION OF THE CENTER SOLDER BALL IN THE OUTER ROW.
1.00 BSC
eD
0.00 BSC
DIMENSIONING AND TOLERANCING METHODS PER ASME Y14.5M-1994.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN THE OUTER ROW "SD" OR "SE" = 0.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN THE OUTER ROW, "SD" = eD/2 AND "SE" = eE/2.
8.
"+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED BALLS.
9.
A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK MARK, METALLIZED MARK INDENTATION
OR OTHER MEANS.
10.
JEDEC SPECIFICATION NO. REF: N/A
002-15550 *A
CYPRESS
Company Confidential
TITLE
THIS DRAWING CONTAINS INFORMATION WHICH IS THE PROPRIETARY PROPERTY OF CYPRESS
SEMICONDUCTOR CORPORATION. THIS DRAWING IS RECEIVED IN CONFIDENCE AND ITS CONTENTS
MAY NOT BE DISCLOSED WITHOUT WRITTEN CONSENT OF CYPRESS SEMICONDUCTOR CORPORATION.
Document Number: 002-29418 Rev .**
DRAWN BY
PACKAGE
CODE(S)
VAA024 ELA024 E2A024
KOTA
APPROVED BY
BESY
DATE
30-AUG-16
PACKAGE OUTLINE, 24 BALL BGA
8.0X6.0X1.0 MM VAA024/ELA024/E2A024
SPEC NO.
DATE
30-AUG-16
SCALE : TO FIT
REV
002-15550
*A
SHEET
1
OF
2
Page 42 of 51
S70KL1283/S70KS1283
DDR Center-Aligned Read Strobe (DCARS) Functionality
The HyperRAM device offers an optional feature that enables independent skewing (phase shifting) of the RWDS signal with respect
to the read data outputs. This feature is provided in certain devices, based on the Ordering Part Number (OPN).
When the DCARS feature is provided, a second differential Phase Shifted Clock input PSC/PSC# is used as the reference for
RWDS edges instead of CK/CK#. The second clock is generally a copy of CK/CK# that is phase shifted 90 degrees to place the
RWDS edges centered within the DQ signals valid data window. However, other degrees of phase shift between CK/CK# and
PSC/PSC# may be used to optimize the position of RWDS edges within the DQ signals valid data window so that RWDS provides
the desired amount of data setup and hold time in relation to RWDS edges.
PSC/PSC# is not used during a write transaction. PSC and PSC# may be driven LOW and HIGH respectively or, both may be driven
LOW during write transactions.
The PSC/PSC# is used in xSPI (Octal) devices. If single-ended mode is selected, then PSC# must be driven LOW but must not be
left floating (leakage concerns).
xSPI HyperRAM Products with DCARS Signal Descriptions
Figure 35. xSPI Product with DCARS Signal Diagram
RESET#
CS#
CK
CK#
PSC
PSC#
VCC
VCCQ
DQ[7:0]
RWDS
VSS
VSSQ
Table 32. Signal Description
Symbol
Type
Description
CS#
Input
Chip Select. xSPI transactions are initiated with a HIGH to LOW transition. xSPI transactions are
terminated with a LOW to HIGH transition.
CK, CK#
Input
Differential Clock. Command, address, and data information is output with respect to the
crossing of the CK and CK# signals. Use of differential clock is optional.
Single Ended Clock. CK# is not used, only a single ended CK is used.
The clock is not required to be free-running.
Input
Phase Shifted Clock. PSC/PSC# allows independent skewing of the RWDS signal with respect
to the CK/CK# inputs. If the CK/CK# (differential mode) is configured, then PSC/PSC# are used.
Otherwise, only PSC is used (Single Ended).
PSC (and PSC#) may be driven HIGH and LOW respectively or both may be driven LOW during
write transactions.
RWDS
Output
Read-Write Data Strobe. Data bytes output during read transactions are aligned with RWDS
based on the phase shift from CK, CK# to PSC, PSC#. PSC, PSC# cause the transitions of
RWDS, thus the phase shift from CK, CK# to PSC, PSC# is used to place RWDS edges within
the data valid window. RWDS is an input during write transactions to function as a data mask. At
the beginning of all bus transactions RWDS is an output and indicates whether additional initial
latency count is required
The dual-die, 128-Mb HyperRAM chip supports data transactions with additional (2X) latency
only.
DQ[7:0]
Input/Output
Data Input/Output. CA/Data information is transferred on these DQs during Read and Write
transactions.
RESET#
Input
Hardware RESET. When LOW, the device will self initialize and return to the idle state. RWDS
and DQ[7:0] are placed into the HIGH-Z state when RESET# is LOW. RESET# includes a weak
pull-up, if RESET# is left unconnected it will be pulled up to the HIGH state.
PSC, PSC#
VCC
Power Supply
Array Power.
VCCQ
Power Supply
Input/Output Power.
VSS
Power Supply
Array Ground.
VSSQ
Power Supply
Input/Output Ground.
Document Number: 002-29418 Rev .**
Page 43 of 51
S70KL1283/S70KS1283
HyperRAM Products with DCARS — FBGA 24-ball, 5 x 5 Array Footprint
Figure 36. 24-ball FBGA, 5 x 5 Ball Footprint, Top View
1
2
3
4
5
RFU
CS#
CK#
CK
Vss
Vcc
PSC
VssQ
RFU
RWDS
DQ2
PSC#
VccQ
DQ1
DQ0
DQ3
DQ4
DQ7
DQ6
DQ5
VccQ
VssQ
A
RESET# RFU
B
C
D
E
HyperRAM Memory with DCARS Timing
The illustrations and parameters shown here are only those needed to define the DCARS feature and show the relationship between
the Phase Shifted Clock, RWDS, and data.
Figure 37. HyperRAM Memory DCARS Timing Diagram[52, 53, 54, 55]
2X initial latency
Notes
52. Transactions must be initiated with CK = LOW and CK# = HIGH. CS# must return HIGH before a new transaction is initiated.
53. The memory drives RWDS during read transactions.
54. This example demonstrates a latency code setting of four clocks and no additional initial latency required.
55. The initial latency "Low = 1x Latency Count" is not applicable in dual-die, 128 Mb HyperRAM.
Document Number: 002-29418 Rev .**
Page 44 of 51
S70KL1283/S70KS1283
Figure 38. DCARS Data Valid Timing[56, 57, 58, 59]
CS#
t CKHP
tCSH
tCSS
CK ,CK#
PSC , PSC#
t IS
tPSCRWDS
t IH
tDSZ
RWDS
tCKDI
tCKD
tDQLZ
tDV
tCKD
Dn
A
DQ[7:0]
tOZ
Dn
B
Dn+1
A
Dn+1
B
RWDS and Data are driven by the memory
Table 33. DCARS Read Timing
Parameter
Symbol
200 MHz
166 MHz
Min
Max
Min
Max
Unit
Input Setup - CK/CK# setup w.r.t PSC/PSC#
(edge to edge)
tIS
0.5
–
0.6
–
ns
CK Half Period - Duty Cycle
(edge to edge)
tIH
0.5
–
0.6
–
ns
HyperRAM PSC transition to RWDS transition
tPSCRWDS
–
5
–
6.5
ns
Time delta between CK to DQ valid and PSC to
RWDS[60]
tPSCRWDS - tCKD
–1.0
+0.5
–1.0
+0.5
ns
Notes
56. Transactions must be initiated with CK = LOW and CK# = HIGH. CS# must return HIGH before a new transaction is initiated.
57. This figure shows a closer view of the data transfer portion of Figure 35 in order to more clearly show the Data Valid period as affected by clock jitter and clock to
output delay uncertainty.
58. The delay (phase shift) from CK to PSC is controlled by the xSPI master interface (Host) and is generally between 40 and 140 degrees in order to place the RWDS
edge within the data valid window with sufficient set-up and hold time of data to RWDS. The requirements for data set-up and hold time to RWDS are determined by
the xSPI master interface design and are not addressed by the xSPI slave timing parameters.
59. The xSPI timing parameters of tCKD, and tCKDI define the beginning and end position of the data valid period. The tCKD and tCKDI values track together (vary by the
same ratio) because RWDS and Data are outputs from the same device under the same voltage and temperature conditions.
60. Sampled, not 100% tested.
Document Number: 002-29418 Rev .**
Page 45 of 51
S70KL1283/S70KS1283
Ordering Information
Ordering Part Number
The ordering part number is formed by a valid combination of the following:
S70KS
128
3
DP
B
H
I
02
0
Packing Type
0 = Tray
3 = 13” Tape and Reel
Model Number (Additional Ordering Options)
02 = Standard 6 8 1.0 mm package (VAA024)
03 = DDR center-aligned Read Strobe (DCARS) 6 8 1.0 mm package (VAA024)
Temperature Range / Grade
I = Industrial (–40 °C to + 85 °C)
V = Industrial Plus (–40 °C to + 105 °C)
A = Automotive, AEC-Q100 Grade 3 (–40 °C to + 85 °C)
B = Automotive, AEC-Q100 Grade 2 (–40 °C to + 105 °C)
Package Materials
H = Low-Halogen, Pb-free
Package Type
B = 24-ball FBGA, 1.00 mm pitch (5x5 ball footprint)
Speed
GA = 200MHz
DP = 166 MHz
Device Technology
2 = 38-nm DRAM Process Technology- HyperBus
3 = 38-nm DRAM Process Technology- Octal
Density
128 = 128 Mb
Device Family
S70KS
Cypress Memory 1.8 V-only, HyperRAM Self-refresh DRAM
S70KL
Cypress Memory 3.0 V-only, HyperRAM Self-refresh DRAM
Document Number: 002-29418 Rev .**
Page 46 of 51
S70KL1283/S70KS1283
Valid Combinations
The Recommended Combinations table lists configurations planned to be available in volume. Table 34 and Table 35 will be
updated as new combinations are released. Contact your local sales representative to confirm availability of specific combinations
and to check on newly released combinations.
Table 34. Valid Combinations — Standard
Device
Family
Density Technology
Speed
Package,
Model
Material, and
Number
Temperature
Packing
Type
Ordering Part Number
Package Marking
S70KL
128
3
DP
BHI
02
0
S70KL1283BPBHI020
7KL1283BPHI02
S70KL
128
3
GA
BHI
02
0
S70KL1283GABHI020
7KL1283GAHI02
S70KL
128
3
GA
BHI
02
0
S70KL1283GABHI020
7KL1283GAHI02
S70KL
128
3
DP
BHI
02
3
S70KL1283BPBHI023
7KL1283BPHI02
S70KL
128
3
DP
BHV
02
0
S70KL1283BPBHV020
7KL1283BPHV02
S70KL
128
3
DP
BHV
02
3
S70KL1283GABHI023
7KL1283GAHI02
S70KS
128
3
GA
BHI
02
0
S70KS1283GABHI020
7KS1283GAHI02
S70KS
128
3
GA
BHI
02
3
S70KS1283GABHI023
7KS1283GAHI02
S70KS
128
3
GA
BHV
02
0
S70KS1283GABHV020
7KS1283GAHV02
S70KS
128
3
GA
BHV
02
3
S70KS1283GABHV023
7KS1283GAHV02
Packing
Type
Ordering Part Number
Package Marking
Table 35. Valid Combinations — DCARS
Device
Family
Density Technology
Speed
Package,
Model
Material, and
Number
Temperature
S70KL
128
3
DP
BHI
03
0
S70KL1283DPBHI030
7KL1283DPHI03
S70KL
128
3
DP
BHI
03
3
S70KL1283DPBHI033
7KL1283DPHI03
S70KL
128
3
DP
BHV
03
0
S70KL1283DPBHV030
7KL1283DPHV03
S70KL
128
3
DP
BHV
03
3
S70KL1283DPBHV033
7KL1283DPHV03
S70KS
128
3
GA
BHI
03
0
S70KS1283GABHI030
7KS1283GAHI03
S70KS
128
3
GA
BHI
03
3
S70KS1283GABHI033
7KS1283GAHI03
S70KS
128
3
GA
BHV
03
0
S70KS1283GABHV030
7KS1283GAHV03
S70KS
128
3
GA
BHV
03
3
S70KS1283GABHV033
7KS1283GAHV03
Document Number: 002-29418 Rev .**
Page 47 of 51
S70KL1283/S70KS1283
Valid Combinations — Automotive Grade / AEC-Q100
Table 36 and Table 37 lists configurations that are Automotive Grade / AEC-Q100 qualified and are planned to be available in
volume. The table will be updated as new combinations are released. Consult your local sales representative to confirm availability
of specific combinations and to check on newly released combinations.
Production Part Approval Process (PPAP) support is only provided for AEC-Q100 grade products.
Products to be used in end-use applications that require ISO/TS-16949 compliance must be AEC-Q100 grade products in
combination with PPAP. Non–AEC-Q100 grade products are not manufactured or documented in full compliance with
ISO/TS-16949 requirements.
AEC-Q100 grade products are also offered without PPAP support for end-use applications that do not require ISO/TS-16949
compliance.
Table 36. Valid Combinations — Automotive Grade / AEC-Q100
Device
Family
Density Technology
Speed
Package,
Model
Material, and
Number
Temperature
Packing
Type
Ordering Part Number
Package Marking
S70KL
128
3
DP
BHA
02
0
S70KL1283DPBHA020
7KL1283DPHA02
S70KL
128
3
DP
BHA
02
3
S70KL1283DPBHA023
7KL1283DPHA02
S70KL
128
3
DP
BHB
02
0
S70KL1283DPBHB020
7KL1283DPHB02
S70KL
128
3
DP
BHB
02
3
S70KL1283DPBHB023
7KL1283DPHB02
S70KL
128
3
GA
BHB
02
0
S70KL1283GABHB020 7KL1283GABHB02
S70KL
128
3
GA
BHB
02
3
S70KL1283GABHB023 7KL1283GABHB02
S70KS
128
3
GA
BHA
02
0
S70KS1283GABHA020
7KS1283GAHA02
S70KS
128
3
GA
BHA
02
3
S70KS1283GABHA023
7KS1283GAHA02
S70KS
128
3
GA
BHB
02
0
S70KS1283GABHB020 7KL1283GABHB02
S70KS
128
3
GA
BHB
02
3
S70KS1283GABHB023
7KS1283GAHB02
Packing
Type
Ordering Part Number
Package Marking
Table 37. Valid Combinations — DCARS Automotive Grade / AEC-Q100
Device
Family
Density Technology
Speed
Package,
Model
Material, and
Number
Temperature
S70KL
128
3
DP
BHA
03
0
S70KL1283DPBHA030
7KL1283DPHA03
S70KL
128
3
DP
BHA
03
3
S70KL1283DPBHA033
7KL1283DPHA03
S70KL
128
3
DP
BHB
03
0
S70KL1283DPBHB030
7KL1283DPHB03
S70KL
128
3
DP
BHB
03
3
S70KL1283DPBHB033
7KL1283DPHB03
S70KS
128
3
GA
BHA
03
0
S70KS1283GABHA030
7KS1283GAHA03
S70KS
128
3
GA
BHA
03
3
S70KS1283GABHA033
7KS1283GAHA03
S70KS
128
3
GA
BHB
03
0
S70KS1283GABHB030
7KS1283GAHB03
S70KS
128
3
GA
BHB
03
3
S70KS1283GABHB033
7KS1283GAHB03
Document Number: 002-29418 Rev .**
Page 48 of 51
S70KL1283/S70KS1283
Acronyms
Document Conventions
Table 38. Acronyms Used in this Document
Acronym
Description
CMOS
complementary metal oxide semiconductor
DCARS
DDR Center-Aligned Read Strobe
DDR
double data rate
DPD
deep power down
DRAM
dynamic RAM
HS
hybrid sleep
MSb
most significant bit
POR
power-on reset
PSRAM
pseudo static RAM
PVT
process, voltage, and temperature
RWDS
read-write data strobe
SPI
serial peripheral interface
xSPI
expanded serial peripheral interface
Document Number: 002-29418 Rev .**
Units of Measure
Units of Measure
Symbol
Unit of Measure
°C
degree Celsius
MHz
megahertz
µA
microampere
µs
microsecond
mA
milliampere
mm
millimeter
ns
nanosecond
ohm
%
percent
pF
picofarad
V
volt
W
watt
Page 49 of 51
S70KL1283/S70KS1283
Revision History
Document Title: S70KL1283/S70KS1283, 3.0 V/1.8 V, 128 Mb (16 MB), Octal (xSPI) Interface HyperRAM (Self-Refresh DRAM)
Document Number: 002-29418
Rev.
ECN No.
Submission
Date
**
6799388
02/07/2020
Document Number: 002-29418 Rev .**
Description of Change
New datasheet
Page 50 of 51
S70KL1283/S70KS1283
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Document Number: 002-29418 Rev .**
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