1N5817

CYStech Electronics Corp. 1.0Amp Silicon Schottky Barrier Rectifiers Spec. No. : C331LB Issued Date : 2004.07.05 Revised Date : Page No. : 1/3 1N581XLB Series Features • Low forward voltage drop • High current capability • High surge current capability • High reliability • Epitaxial construction Mechanical Data • Case: DO-41 Molded Plastic. • Terminals: Axial leads, solderable per MIL-STD-202, Method 208 guaranteed • Polarity: Color band denotes cathode end. • Epoxy: UL 94V-0 rate flame retardant • Mounting position: Any • Weight: 0.34 grams Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Type Number 1N5817 1N5818 1N5819 Maximum Recurrent Peak Reverse Voltage 20 30 40 Maximum RMS Voltage 14 21 28 Maximum DC Blocking Voltage 20 30 40 Maximum Average Forward Rectified Current 1 .375”(9.5mm) lead length at Ta=90°C Peak Forward Surge Current, 8.3ms Single Half Sine-wave 25 Superimposed on Rated Load(JEDEC method) Maximum Instantaneous Forward Voltage @ 1.0A 0.45 0.55 0.6 Maximum DC Reverse Current at Rated DC 1 (@Ta=25°C) Blocking Voltage 10 (@Ta=100°C) Typical Junction Capacitance (Note 1) 110 Typical thermal resistance(Note 2) 80 Operating Temperature Range Tj -65 to +125 Storage Temperature Range Tstg -65 to +150 Notes : 1. Measured at 1 MHz and applied reverse voltage of 4.0Volts 2. Thermal resistance from junction to ambient, vertical PCB mounting, 0.5”(12.7mm) lead length. Units V V V A A V mA pF ℃/W °C °C 1N581XLB CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Forward Current Derating Curve 1.2 Peak Forward Surge Current---IFSM(A) 30 25 20 15 10 5 0 0 50 100 150 1 10 Spec. No. : C331LB Issued Date : 2004.07.05 Revised Date : Page No. : 2/3 Maximum Non-Repetitive Forward Surge Current Average Forward Current---Io(A) 1 0.8 0.6 0.4 0.2 0 Ambient Temperature---TA(℃) Forward Current vs Forward Voltage Single Phase, Half Wave 60Hz, Resistive or Inductive Load 0.375"(0.95mm)lead length Tj=25℃, 8.3ms Single Half Sine Wave JEDEC method 100 Number of Cycles at 60Hz Junction Capacitance vs Reverse Voltage 350 100 1N5817 10 1N5818-5819 Junction Capacitance---CJ(pF) 300 250 200 150 100 50 0 Forward Current---IF(A) 1 0.1 Tj=25℃, Pulse width=300μs 1% Duty cycle 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 Forward Voltage---VF(V) Reverse Leakage Current vs Reverse Voltage 100 Reverse Leakage Current---IR(mA) 0.01 0.1 1 10 100 Reverse Voltage---VR(V) 10 1 Tj=75℃ 0.1 Tj=25℃ 0.01 0 20 40 60 80 100 120 140 Percentage Rated Peak Reverse Voltage---(%) 1N581XLB CYStek Product Specification CYStech Electronics Corp. DO-41 Dimension Spec. No. : C331LB Issued Date : 2004.07.05 Revised Date : Page No. : 3/3 Marking: On the cylindrical surface DO-41 Molded Plastic Package CYStek Package Code : LB 1N581X *:Typical DIM A B C Inches Min. Max. 0.0280 0.0340 1.0000 0.1600 0.2050 Millimeters Min. Max. 0.71 0.86 25.40 4.10 5.20 DIM D E Inches Min. Max. 1.0000 0.0800 0.1070 Millimeters Min. Max. 25.40 2.00 2.70 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 1N581XLB CYStek Product Specification