2N4403A3

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor Spec. No. : C305A3 Issued Date : 2003.06.13 Revised Date : 2004.02.23 Page No. : 1/4 2N4403A3 Description • The2N4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC Max .= -0.6A • Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA. Ideal for low-Voltage operation • Complementary to 2N4401A3. Symbol 2N4403A3 Outline TO-92 B：Base C：Collector E：Emitter EBC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits -40 -40 -5 -0.6 625 200 150 -55~+150 Unit V V V A mW °C/W °C °C 2N4403A3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 hFE 1 hFE 2 hFE 3 *hFE 4 *hFE 5 fT Cob Min. -40 -40 -5 -0.75 30 60 100 82 20 200 Typ. Max. -0.1 -0.4 -0.75 -0.95 -1.3 390 8.5 Unit V V V µA V V V V MHz pF Spec. No. : C305A3 Issued Date : 2003.06.13 Revised Date : 2004.02.23 Page No. : 2/4 Test Conditions IC=-100µA IC=-1mA IE=-100µA VCE=-35V, VEB=-0.4V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-2V, IC=-150mA VCE=-2V, IC=-500mA VCE=-10V, IC=-20mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 4 Rank Range P 82~180 Q 120~270 R 180~390 2N4403A3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=3V Spec. No. : C305A3 Issued Date : 2003.06.13 Revised Date : 2004.02.23 Page No. : 3/4 Saturation Voltage vs Collector Current 1000 Current Gain---HFE VCE(SAT)@IC=10IB 100 100 10 0.1 1 10 100 1000 Collector Current---IC(mA) 10 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) Cutoff Frequency-FT(GHZ) 1 Cutoff Frequency vs Collector Current FT@VCE=5V VBE(SAT)@IC=10IB 100 0.1 1 10 100 Collector Current---IC(mA) 1000 0.1 1 10 Collector Current---IC(mA) 100 Power Derating Curve 700 Power Dissipation---PD(mW) 600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) 2N4403A3 CYStek Product Specification CYStech Electronics Corp. TO-92 Dimension Spec. No. : C305A3 Issued Date : 2003.06.13 Revised Date : 2004.02.23 Page No. : 4/4 A B 1 2 3 α2 Marking: 2N N4403 α3 C D H I E F G α1 Style: Pin 1.Emitter 2.Base 3.Collector 3-Lead TO-92 Plastic Package CYStek Package Code: A3 *: Typical DIM A B C D E F Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. 2N4403A3 CYStek Product Specification