BAS21N3

CYStech Electronics Corp. High voltage switching diode Spec. No. : C355N3-A Issued Date : 2004.04.13 Revised Date Page No. : 1/4 BAS21N3 Description The BAS21N3 is a general purpose diode fabricated in planar technology and encapsulated in a small SOT-23 plastic SMD package. Features •Fast switching speed : max. 50ns •Small plastic SMD package •General application. •Continuous reverse voltage : max. 200V •Repetitive peak reverse voltage : max. 250V •Repetitive peak forward current : max. 625mA Applications •General purpose switching in e.g. surface mounted circuits. Symbol Outline BAS21N3 2 3 1：Anode 2：Not Connected 3：Cathode 1 SOT-23 Cathode Not Connected Anode BAS21N3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings @TA=25℃ Parameter Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current Repetitive peak forward current Non-repetitive peak forward current @square wave, Tj=25℃ prior to surge Symbol VRRM VR IF IFRM t=1µs t=100µs t=10ms IFSM Ptot Tj Tstg Min -65 Spec. No. : C355N3-A Issued Date : 2004.04.13 Revised Date Page No. : 2/4 Max 250 200 200 625 9 3 1.7 250 150 +150 Unit V V mA mA A A A mW °C °C Total power dissipation(Note 1) Junction Temperature Storage Temperature Note 1: Device mounted on an FR-4 PCB. Electrical Characteristics @ Tj=25℃ unless otherwise specified Parameters Forward voltage Reverse current Diode capacitance Reverse recovery time Symbol VF IR Cd trr Conditions IF=100mA IF=200mA VR=200V VR=200V,Tj=150℃ VR=0V, f=1MHz when switched from IF=30mA to IR=30mA,RL=100Ω, measured at IR=3mA Min Typ. Max 1 1.25 100 100 5 50 Unit V V nA µA pF ns Thermal Characteristics Symbol Rth,j-tp Rth, j-a Parameter thermal resistance from junction to tie-point thermal resistance from junction to ambient Conditions Note 1 Value 330 500 Unit ℃/W ℃/W Note 1: Device mounted on an FR-4 PCB. BAS21N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Forward Characteristics 1000 Instantaneous Forward Current---I F(mA) Reverse Leakage Current---I R(μA) Spec. No. : C355N3-A Issued Date : 2004.04.13 Revised Date Page No. : 3/4 Reverse Leakage Current vs Junction Temperature 100 100 10 10 1 1 0.1 0.1 0.01 0 1 Instantaneous Forward Voltage---VF(V) 2 0.01 0 100 Junction Temperature---Tj(℃) 200 Power Derating Curve 300 Power Dissipation---P D(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA(℃) BAS21N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C355N3-A Issued Date : 2004.04.13 Revised Date Page No. : 4/4 Marking: A L 3 B 1 2 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style:Pin.1. Anode 2. Not Connected 3.Cathode D K S JE TS V G C H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BAS21N3 CYStek Product Specification