BAT54AN3

CYStech Electronics Corp. Small Signal Schottky (double) diodes Spec. No. : C302N3-H Issued Date : 2003.04.14 Revised Date : Page No. : 1/4 BAT54N3/BAT54AN3 BAT54CN3/BAT54SN3 Description Planar silicon Schottky barrier diodes encapsulated in a SOT-23 small plastic SMD package. Single diodes and double diodes with different pinning are available. Features •Very small conduction losses •Low forward voltage drop •Small plastic SMD package Applications •Ultra high-speed switching •Voltage clamping •Protection circuits •Blocking diodes Pinning Pin 1 2 3 BAT54 A NC K 3 1 2 1 Outline Description BAT54A BAT54C K1 A1 K2 A2 A1,A2 K1,K2 3 2 BAT54S A1 K2 K1,A1 SOT-23 3 1 2 N.C. (1) BAT54 3 1 2 1 (2)BAT54A 3 2 Marking: Type BAT54 N3 BAT54AN3 BAT54CN3 BAT54SN3 Marking Code L4 L42 L43 L44 (3)BAT54C (4)BAT54S Diode configuration and symbol BAT54N3/BAT54AN3/BAT54CN3/BAT54SN3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings Spec. No. : C302N3-H Issued Date : 2003.04.14 Revised Date : Page No. : 2/4 • Maximum Temperatures Storage Temperature Tstg ................................................................................................... -65~+150 °C Junction Temperature Tj .............................................................................................................. +125°C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) Ptot (Note) ......................................................................... 230 mW • Maximum Voltages and Currents (Ta=25°C) Repetitive Peak Reverse Voltage VRRM .............................................................................................. 30 V Continuous Forward Current IF ................................................................................................... 200 mA Repetitive Peak Forward Current(tp≤1s,duty cycle≤0.5)………………………………………… 300mA Non-repetitive Peak Forward Current (tp