BC807N3

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2005.05.10 Page No. : 1/4 BC807N3 Description • The BC807N3 is designed for general purpose switching and amplification applications. It is housed in the SOT-23/SC-59 package which is designed for low power surface mount applications. • Low VCE(sat) • High switching speed. • Complementary to BC817N3 Equivalent Circuit BC807N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @TA=25℃ Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits -50 -45 -5 -500 225 (Note 1) 556 (Note 1) 150 -55~+150 Unit V V V mA mW °C/W °C °C Note 1:When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in. BC807N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE 1 *hFE fT Cob Min. -50 -45 -5 100 40 80 Typ. -0.5 9 Max. -100 -100 -0.7 -1.2 600 Unit V V V nA nA V V MHz pF Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2005.05.10 Page No. : 2/4 Test Conditions IC=-10µA IC=-10mA IE=-10µA VCB=-20V VEB=-5V IC=-500mA, IB=-50mA VCE=-1V, IC=-500mA VCE=-1V, IC=-100mA VCE=-1V, IC=-500mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1: Rank Range 16 100--250 25 160--400 40 250--600 BC807N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=10V Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2005.05.10 Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB Current Gain---HFE 100 100 10 0.1 1 10 100 1000 Collector Current---IC(mA) 10 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Cutoff Frequency vs Collector Current 1000 Cutoff Frequency---fT(MHz) Saturation Voltage---(mV) VBE(SAT)@IC=10IB VCE=20V 1000 100 0.1 1 10 100 1000 Collector Current---IC(mA) 100 1 10 Collector Current---IC(mA) 100 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 Ambient Temperature---TA(℃) 200 BC807N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2005.05.10 Page No. : 4/4 A L 3 B 1 2 S Marking: TE 9F V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BC807N3 CYStek Product Specification