BSS123N3

CYStech Electronics Corp. N-CHANNEL MOSFET BSS123N3 Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2018.06.20 Page No. : 1/8 BVDSS ID@VGS=10V, TA=25°C RDSON(TYP) 100V VGS=10V, ID=700mA 1.7A 290mΩ VGS=4V, ID=400mA 310mΩ VGS=10V, ID=170mA 260mΩ VGS=4V, ID=170mA 280mΩ Description The BSS123N3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High speed switching • Low-voltage drive(2.5V) • Easily designed drive circuits • Pb-free lead plating and halogen-free package Symbol Outline BSS123N3 SOT-23 D G：Gate S：Source D：Drain G S Ordering Information Device BSS123N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name BSS123N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2018.06.20 Page No. : 2/8 Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V Pulsed Drain Current Total Power Dissipation Channel Temperature Junction and Storage Temperature Range Symbol VDSS Limits 100 ±20 1.7 6.8 1.38 +150 -55~+150 VGSS ID IDP PD TCH Tj ; Tstg Unit V *1 *2 A W C Note : *1. Pulse Width  300μs, Duty cycle 2% *2. When the device is surface mounted on 1 in² copper pad of FR-4 board with 2 oz. copper. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient Symbol Rth,ja Limit 90 Unit C/W Note : Surface mounted on 1 in² copper pad of FR-4 board, 350C/W when mounted on minimum copper pad. Electrical Characteristics (Ta=25C) Symbol Static BVDSS* VGS(th) IGSS IDSS RDS(ON)* GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd BSS123N3 Min. Typ. Max. 100 1 0.08 290 310 260 280 1 2.5 ±100 1 400 450 400 400 - - 512 15 11 3.1 1.2 9.7 1.4 3.6 1.8 0.6 - Unit Test Conditions S VGS=0V, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0V VDS=100V, VGS=0V ID=700mA, VGS=10V ID=400mA, VGS=4V ID=170mA, VGS=10V ID=170mA, VGS=4V VDS=10V, ID=170mA pF VDS=25V, VGS=0V, f=1MHz ns VDD=30V, ID=1.7A, VGS=10V, RGEN=6Ω nC VDD=30V, ID=1.7A, VGS=10V V nA μA m CYStek Product Specification CYStech Electronics Corp. Source-Drain Diode *IS *ISM *VSD - - 1.7 6.8 1.2 Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2018.06.20 Page No. : 3/8 A V VGS=0V, ISD=1A *Pulse Test : Pulse Width 380μs, Duty Cycle2% Recommended Soldering Footprint BSS123N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2018.06.20 Page No. : 4/8 Typical Characteristics Typical Output Characteristics Breakdown Voltage vs Junction Temperature 140 8 10V 8V 7V 6V 4.5V 4V 3.5V Drain Current - ID(A) 6 5 4 ID=250μA Breakdown Voltage -BVDSS(V) 7 3 VGS=3V 2 1 130 120 110 100 0 0 1 2 3 4 Drain-Source Voltage -VDS(V) 5 -60 -40 -20 6 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 1000 Source-Drain Voltage-VSD(V) Static Drain-Source On-State Resistance-RDS(on)(mΩ) 10000 VGS=3V VGS=4.5V VGS=10V VGS=2.5V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 100 0.001 0.01 0.1 Drain Current-ID(A) 0 1 900 Static Drain-Source On-State Resistance-RDS(ON)(mΩ) Static Drain-Source On-State Resistance-RDS(ON)(mΩ) 1000 800 700 600 500 400 ID=700mA 300 200 ID=400mA 100 0 0 2 4 6 8 Gate-Source Voltage-VGS(V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Reverse Drain Current -IDR(A) 1 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage BSS123N3 0 20 40 60 80 100 120 140 160 Junction Temperature-Tj(°C) 10 700 650 600 550 500 450 400 350 300 250 200 150 100 VGS=10V, ID=700mA VGS=4V, ID=400mA VGS=10V, ID=170mA -60 -20 20 60 100 140 Junction Temperature-Tj(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2018.06.20 Page No. : 5/8 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 2.4 Threshold Voltage-VGS(th)(V) Capacitance---(pF) 1000 Ciss 100 Coss Crss 2.2 ID=250uA 2 1.8 1.6 1.4 1.2 1 10 0 5 10 15 20 25 Drain-Source Voltage -VDS(V) 30 -60 -40 -20 35 8 7 VDS=30V 10 Drain Current -ID(A) Gate-Source Voltage---VGS(V) 60 80 100 120 140 160 Typical Transfer Characteristics 12 VDS=50V 8 VDS=70V 6 4 2 ID=1.7A 6 5 4 3 2 VDS=5V 1 0 0 0 1 2 3 4 5 0 Total Gate Charge---Qg(nC) 10 100μs Power Dissipation---PD(W) 1.40 1ms 1 10ms Ta=25°C, Single pulse, mounted on a 1 in² FR-4 boad with 2 oz. copper. RθJA=90°C/W 15 1.60 RDS(ON) limited 0.1 5 10 Gate-Source Voltage-VGS(V) Power Derating Curve Maximum Safe Operating Area Drain Current --- ID(A) 20 40 Junction Temperature-Tj(°C) Gate Charge Characteristics 100ms mounted on a 1 in² FR board with 2 oz. copper 1.20 1.00 0.80 0.60 0.40 0.20 DC 0.00 0.01 0.1 BSS123N3 0 1 10 100 Drain-Source Voltage -VDS(V) 1000 0 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2018.06.20 Page No. : 6/8 Reel Dimension Carrier Tape Dimension BSS123N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2018.06.20 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 240 +0/-5 C 217C 60-150 seconds 260 +0/-5 C 10-30 seconds 20-40 seconds 6C/second max. 6 minutes max. 6C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BSS123N3 CYStek Product Specification Spec. No. : C580N3 Issued Date : 2011.09.16 Revised Date : 2018.06.20 Page No. : 8/8 CYStech Electronics Corp. SOT-23 Dimension Marking: A 3 B Device Code S SA □□ L 2 1 Date Code G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H J Style : Pin 1.Gate 2.Source 3.Drain *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0004 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.01 0.10 DIM J K L S V Inches Min. Max. 0.0035 0.0071 0.0276 REF 0.0374* 0.0830 0.1161 0.0098 0.0256 Millimeters Min. Max. 0.09 0.18 0.70 REF 0.95* 2.10 2.95 0.25 0.65 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :  Lead : Pure tin plated.  Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice:  All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  CYStek reserves the right to make changes to its products without notice.  CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BSS123N3 CYStek Product Specification