BTA1579S3

CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor Spec. No. : C307S3 Issued Date : 2003.06.27 Revised Date : Page No. : 1/4 BTA1579S3 Description • The BTP1579S3 is designed for high voltage amplification application. • High BVCEO, BVCEO= -120V • Complementary to BTC4102S3. Symbol BTA1579S3 Outline SOT-323 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits -120 -120 -5 -50 200 625 150 -55~+150 Unit V V V mA mW °C/W °C °C BTA1579S3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) hFE fT Cob Min. -120 -120 -5 56 Typ. 140 3.2 Max. -500 -500 -0.5 390 Unit V V V nA nA V MHz pF Spec. No. : C307S3 Issued Date : 2003.06.27 Revised Date : Page No. : 2/4 Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-100V VEB=-4V IC=-10mA, IB=-1mA VCE=-6V, IC=-2mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range K 56~120 P 82~180 Q 120~270 R 180~390 BTA1579S3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=5V Spec. No. : C307S3 Issued Date : 2003.06.27 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB Current Gain---HFE 100 100 10 0.1 1 10 100 Collector Current---IC(mA) 10 0.1 1 10 100 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1 Cutoff Frequency vs Collector Current FT@VCE=12V VBE(SAT)@IC=10IB 100 0.1 1 10 100 1000 Collector Current---IC(mA) 0.1 1 10 Collector Current---IC(mA) 100 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTA1579S3 CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension Spec. No. : C307S3 Issued Date : 2003.06.27 Revised Date : Page No. : 4/4 3 A Marking: A1 Q Lp detail Z W B C 1 e1 e D bp 2 TE 2L E A Z θ He 0 1 scale 2 mm 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 v A Style: Pin 1.Base 2.Emitter 3.Collector *: Typical DIM A A1 bp C D E e Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - Inches DIM Min. Max. e1 0.0256 He 0.0787 0.0886 Lp 0.0059 0.0177 Q 0.0051 0.0091 v 0.0079 w 0.0079 θ Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1579S3 CYStek Product Specification