BTA1640I3

CYStech Electronics Corp. PNP Epitaxial Planar Power Transistor Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 1/5 BTA1640I3 Features BVCEO IC RCESAT -50V -7A 70mΩ • Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A • Excellent current gain linearity • RoHS compliant package Symbol BTA1640I3 Outline TO-251 B：Base C：Collector E：Emitter B CE BC Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380μs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits -60 -50 -5 -7 -10 (Note 1) 1 20 125 6.25 150 -55~+150 Unit V V V A W °C/W °C/W °C °C BTA1640I3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol *BVCEO BVCBO BVEBO ICEO ICBO IEBO *VCE(sat) *VBE(sat) *hFE *hFE Min. -50 -60 -5 120 30 Typ. -0.2 Max. -50 -1 -1 -0.4 -1.2 400 Unit V V V μA μA μA V V - Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 2/5 Test Conditions IC=-10mA, IB=0 IC=-1mA, IE=0 IE=-1mA, IC=0 VCE=-30V, IB=0 VCB=-50V, IB=0 VEB=-5V, IC=0 IC=-3A, IB=-150mA IC=-3A, IB=-150mA VCE=-1V, IC=-1A VCE=-1V, IC=-3A *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification of hFE 1 Rank Range Y 120~240 G 200~400 Ordering Information Device BTA1640I3 Package TO-251 (RoHS compliant) Shipping 80 pcs / tube, 50 tubes / box Marking A1640 Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) Current Gain---HFE VCE=2V VCE(SAT) 1000 100 VCE=1V 100 IC=30IB IC=50IB 10 1 10 100 1000 Collector Current---IC(mA) 10000 10 1 10 100 1000 Collector Current---IC(mA) 10000 BTA1640I3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 3/5 Grounded Emitter Output Characteristics 4000 Collector Current---IC(mA) 20mA VBE(SAT)@IC=50IB 3500 3000 2500 2000 1500 1000 500 0 0 1000 10mA 6mA 2mA IB=0 100 1 10 100 1000 Collector Current---IC(mA) 10000 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Grounded Emitter Output Characteristics 8000 Collector Current---IC(mA) 7000 6000 5000 4000 3000 2000 1000 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 10mA 5mA IB=0mA 25mA 50mA Power Derating Curve 1.2 1 Power Dissipation---PD(W) 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA(℃) 6 Power Derating Curve 25 Power Dissipation---PD(W) 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC(℃) BTA1640I3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 4/5 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. BTA1640I3 CYStek Product Specification CYStech Electronics Corp. TO-251 Dimension A B C D Spec. No. : C657I3 Issued Date : 2007.04.04 Revised Date :2009.02.04 Page No. : 5/5 Marking: A1640 F 3 E K 2 1 J G I H Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1640I3 CYStek Product Specification