BTA1759N3

CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 BTA1759N3 Description • High breakdown voltage. (BVCEO=-400V) • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA. • Wide SOA (safe operation area). • Complementary to BTC4505N3. Symbol BTA1759N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -400 -400 -7 -300 225 150 -55~+150 Unit V V V mA mW °C °C BTA1759N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) *hFE fT Cob Min. -400 -400 -7 100 Typ. -0.08 12 13 Max. -10 -20 -10 -0.5 -1.2 270 Unit V V V µA nA µA V V MHz pF Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 2/4 Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-400V VCE=-300V, REB=4kΩ VEB=-6V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-10mA VCE=-10V, IC=-10mA, f=5MHz VCB=-10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% BTA1759N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gian vs Collector Current 1000 10000 Saturation Voltage---(mV) Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 3/4 Saturation Voltage vs Collector Current Current Gain---HFE VCE = 10V 1000 VCE(SAT) @ IC = 20IB 100 VCE = 5V 100 VCE(SAT) @ IC =10IB 10 1 10 Collector Current---IC(mA) 100 10 1 10 Collector Current---IC(mA) 100 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VBE(SAT) @ IC = 10IB Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 1000 100 1 10 100 1000 Collector Current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA(℃) BTA1759N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 4/4 A L 3 B 1 2 S Marking: TE 4Z V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1759N3 CYStek Product Specification