BTA1952E3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 BTA1952E3 Features • Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Wide SOA Symbol BTA1952E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) IB Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -100 -80 -5 -5 -8 -1 2 40 150 -55~+150 Unit V V V *1 A A W °C °C BTA1952E3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCEO ICBO IEBO *VCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Min. -80 100 120 10 Typ. Max. -10 -10 -0.6 -0.8 -1.3 -1.5 390 Unit V µA µA V V V V MHz Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 2/4 Test Conditions IC=-10mA, IB=0 VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-1A, IB=-10mA IC=-3A, IB=-150mA IC=-4A, IB=-200mA IC=-3A, IB=-150mA VCE=-3V, IC=-500mA VCE=-2V, IC=-1A VCE=-4V, IC=-1A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 2 Rank Range Q 120~270 R 180~390 Ordering Information Device BTA1952E3 Package TO-220AB Shipping Tube BTA1952E3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) VCE=4V Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB Current Gain---HFE 100 10 100 1 10 100 1000 Collector Current---IC(mA) 10000 1 1 10 100 1000 Collector Current---IC(mA) 10000 On Voltage vs Collector Current 10000 VBE(on)@VCE=4V Power Derating Curve 2.5 Power Dissipation---PD(W) 2 1.5 1 0.5 0 On Voltage---(mV) 1000 100 0.1 1 10 100 1000 10000 Collector Current---IC(mA) 0 50 100 150 Ambient Temperature---TA(℃) 200 Power Derating Curve 45 40 Power Dissipation---PD(W) 35 30 25 20 15 10 5 0 0 50 100 150 Case Temperature---TC(℃) 200 BTA1952E3 CYStek Product Specification CYStech Electronics Corp. TO-220AB Dimension Marking: E C Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 4/4 A D B A1952 H I G 4 P M 3 2 1 N Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector K O 3-Lead TO-220AB Plastic Package CYStek Package Code: E3 *: Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1952E3 CYStek Product Specification