BTA1952I3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5 BTA1952I3 Features BVCEO IC RCESAT -100V -5A 150mΩ • Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Wide SOA • Complementary to BTC5103I3 • RoHS compliant package Symbol BTA1952I3 Outline TO-251 B：Base C：Collector E：Emitter B CCE B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -100 -60 -5 -5 -10 1 25 150 -55~+150 Unit V V V *1 A W °C °C BTA1952I3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Min. -100 -60 -5 70 30 Typ. -0.45 60 Max. -1 -1 -0.6 -1.2 240 Unit V V V μA μA V V MHz Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 2/ 5 Test Conditions IC=-50μA, IE=0 IC=-10mA, IB=0 IE=-50μA, IC=0 VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-3A, IB=-0.15A IC=-3A, IB=-0.15A VCE=-1V, IC=-1A VCE=-1V, IC=-3A VCE=-4V, IC=-1A, f=30MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTA1952I3 Package TO-251 (RoHS compliant) Shipping 80 pcs / tube, 50 tubes / box Marking A1952 BTA1952I3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 10000 VCE(SAT) Saturation Voltage---(mV) Current Gain---HFE 1000 IC=20IB Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 3/ 5 Saturation Voltage vs Collector Current 100 100 VCE=1V 10 IC=10IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 1 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Power Derating Curve 1.2 Power Dissipation---PD(W) Saturation Voltage---(mV) VBE(SAT) @ IC=10IB 1 0.8 0.6 0.4 0.2 0 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 200 Ambient Temperature---TA(℃) Power Derating Curve 30 Power Dissipation---PD(W) 25 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC(℃) BTA1952I3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 4/ 5 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. BTA1952I3 CYStek Product Specification CYStech Electronics Corp. TO-251 Dimension A B C D Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 5/ 5 Marking: A1952 F 3 E K 2 1 J G I H Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1952I3 CYStek Product Specification