BTB1184J3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 1/6 BTB1184J3 Features • Low VCE(sat) • Excellent current gain characteristics • Complementary to BTD1760J3 • RoHS compliant package BVCEO IC RCESAT -50V -3A 130mΩ Symbol BTB1184J3 Outline TO-252 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -60 -50 -6 -3 -7 1 15 150 -55~+150 Unit V V V *1 *2 A W °C °C *2 . Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger. BTB1184J3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 fT Cob Min. -60 -50 -6 120 180 80 Typ. -0.26 -0.96 80 35 Max. -1 -1 -0.5 -1.2 560 Unit V V V μA μA V V MHz pF Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 2/6 Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-40V, IE=0 VEB=-4V, IC=0 IC=-2A, IB=-0.1A IC=-2A, IB=-0.1A VCE=-2V, IC=-20mA VCE=-3V, IC=-500mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE2 Rank Range R 180~390 S 270~560 Ordering Information Device BTB1184J3 Package TO-252 (RoHS compliant) Shipping 2500 pcs / Tape & Reel Marking B1184 Recommended soldering footprint BTB1184J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 VCE=3V Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 3/6 Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) Current Gain---HFE 100 VCESAT@IC=50IB 100 VCE=2V VCE=1V 10 VCESAT=30IB VCESAT=20IB 10 1 10 100 1000 Collector Current---IC(mA) 10000 1 1 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 10000 10000 On Voltage vs Collector Current 1000 VBESAT@IC=10IB On Voltage---VBEON(mV) Saturation Voltage---(mV) 1000 VBEON@VCE=2V 100 1 10 100 1000 Collector Current---IC(mA) 10000 100 1 10 100 1000 Collector Current---IC(mA) 10000 Power Derating Curve 1.2 Power Dissipation---PD(W) Power Derating Curve 16 14 Power Dissipation---PD(W) 12 10 8 6 4 2 0 0 20 40 60 80 100 120 Ambient Temperature---TA(℃) 140 160 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature---TA(℃) 140 160 BTB1184J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 4/6 Carrier Tape Dimension BTB1184J3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 5/6 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1184J3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension A C Spec. No. : C817J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 6/6 Marking: Production month : Jan→1, Feb→2,…, Sep→9, Oct→A, Nov→B, Dec→C B L F G D Device Name HFE rank code B1184 □ □□ 3 H E K 2 I 1 J Production Year: 2006→6, 2007→7,…, etc Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1184J3 CYStek Product Specification