BTB1205I3_09

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 1/ 6 BTB1205I3 Features • Low VCE(sat), VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA • Excellent DC current gain characteristics • Fast switching speed • Large current capacity • RoHS compliant package BVCEO IC RCESAT -20V -5A 127mΩ typ. Applications • Strobe, voltage regulators, relay drivers, lamp drivers Symbol BTB1805I3 Outline TO-251 B：Base C：Collector E：Emitter BCE BTB1205I3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : 1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC ICP IB Pd Pd Tj Tstg Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 2/ 6 Limits -25 -20 -5 -5 -8 (Note 1) -0.5 Unit V V V A A W °C °C 1 10 150 -55~+150 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min. -25 -20 -5 190 60 Typ. -380 -1.0 320 60 Max. -0.5 -0.5 -500 -1.3 380 Unit V V V μA μA mV V MHz pF Test Conditions IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 IC=-3A, IB=-60mA IC=-3A, IB=-60mA VCE=-2V, IC=-0.5A VCE=-2V, IC=-4A VCE=-5V, IC=-200mA, f =100MHz VCB=-10V, f =1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTB1205I3 Package TO-251 (RoHS compliant) Shipping 80 pcs / tube, 50 tubes / box Marking B1205 BTB1205I3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) VCE=2V Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 3/ 6 Saturation Voltage vs Collector Current 10000 VCESAT 1000 Current Gain---HFE IC=100IB IC=40IB IC=50IB 100 VCE=1V 100 IC=30IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 10 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) Collector Current---IC(A) VBESAT@IC=10IB Output Characteristics 7 IB=50mA 6 5 4 3 2 1 IB=0 IB=25mA IB=20mA IB=15mA IB=10mA IB=5mA 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Output Characteristics 4 3.5 IB=20mA Power Derating Curves 12 3 2.5 2 1.5 1 0.5 0 0 IB=10mA IB=6mA IB=4mA IB=2mA IB=0 Power Dissipation---PD(W) Collector Current---IC(A) 10 8 6 4 2 0 No heat sink 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 50 100 150 Ambient Temperature---TA(℃) 200 BTB1205I3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) On Voltage vs Collector Current 10000 VBEON@VCE=2V Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 4/ 6 On Voltage---(mV) 1000 100 1 10 100 1000 Collector Current---IC(mA) 10000 BTB1205I3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 5/ 6 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. BTB1205I3 CYStek Product Specification CYStech Electronics Corp. TO-251 Dimension Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 6/ 6 A B C D Marking: B1205 F 3 E K 2 1 J G I H Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead :KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1205I3 CYStek Product Specification