BTB1236AM3

CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor Spec. No. : C854M3 Issued Date : 2004.08.20 Revised Date : Page No. : 1/4 BTB1236AM3 Description • High BVCEO • High current capability Symbol BTB1236AM3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP PD Limits -180 -160 -5 -1.5 -3 0.6 1 2 Unit V V V A A W W W °C/W °C/W °C/W °C °C (Note 1) (Note 2) (Note 3) Thermal Resistance, Junction to Ambient RθJA 208 125 (Note 2) 62.5 (Note 3) Junction Temperature Storage Temperature Note : 1. Single Pulse Pw≦350µs, Duty≦2%. Tj Tstg 150 -55~+150 2. When mounted on FR-4 PCB with area measuring 10×10×1 mm. 3. When mounted on ceramic with area measuring 40×40×1 mm BTB1236AM3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. -180 -160 -5 60 30 Typ. 140 27 Max. -1 -1 -0.6 -1.5 200 Unit V V V µA µA V V MHz pF Spec. No. : C854M3 Issued Date : 2004.08.20 Revised Date : Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of hFE 1 Rank Range K 60~120 P 82~190 Q 120~200 BTB1236AM3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 VCE=5V Spec. No. : C854M3 Issued Date : 2004.08.20 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB 100 Saturation Voltage-(mV) 1 10 100 1000 10000 Current Gain---HFE 100 10 1 Collector Current---IC(mA) 10 1 10 100 1000 Collector Current---IC(mA) 10000 On Voltage vs Collector Current 10000 Power Derating Curve 2.5 Power Dissipation---PD(W) VBE(ON)@VCE=5V 2 1.5 1 0.5 0 See Note 3 on page 1 See Note 2 on page 1 On Voltage---(mV) 1000 100 1 10 100 1000 10000 Collector Current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA(℃) BTB1236AM3 CYStek Product Specification CYStech Electronics Corp. SOT-89 Dimension A Spec. No. : C854M3 Issued Date : 2004.08.20 Revised Date : Page No. : 4/4 Marking: 1 2 C 3 H AV2 B D Style: Pin 1. Base 2. Collector 3. Emitter E F G I 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1236AM3 CYStek Product Specification