BTB1236AT3_06

CYStech Electronics Corp. Silicon PNP Epitaxial Planar Transistor Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date :2006.07.11 Page No. : 1/4 BTB1236AT3 Description • High BVCEO • High current capability • Pb-free package Symbol BTB1236AT3 Outline TO-126 B：Base C：Collector E：Emitter E CB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg Limits -180 -160 -5 -1.5 -3 0.5 1 20 150 -55~+150 Unit V V V A A A W °C °C BTB1236AT3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. -180 -160 -5 160 30 Typ. 140 27 Max. -1 -1 -0.6 -1.5 320 Unit V V V µA µA V V MHz pF Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date :2006.07.11 Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% BTB1236AT3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 VCE=5V Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date :2006.07.11 Page No. : 3/4 Saturation Voltage vs Collector Current 1000 VCE(SAT)@IC=10IB 100 Saturation Voltage-(mV) 1 10 100 1000 10000 Current Gain---HFE 100 10 1 Collector Current---IC(mA) 10 1 10 100 1000 Collector Current---IC(mA) 10000 On Voltage vs Collector Current 10000 VBE(ON)@VCE=5V Power Derating Curve 1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 On Voltage---(mV) 1000 100 1 10 100 1000 10000 Collector Current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA(℃) Power Derating Curve 25 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC(℃) BTB1236AT3 Power Dissipation---PD(W) CYStek Product Specification CYStech Electronics Corp. TO-126 Dimension D A B 123 G C I Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date :2006.07.11 Page No. : 4/4 E J K M Marking: α3 α4 B1236A Style: Pin 1.Emitter 2.Collector 3.Base F H L α1 α2 3-Lead TO-126 Plastic Package CYStek Package Code: T3 *: Typical DIM α1 α2 α3 α4 A B C D E Inches Min. Max. *3° *3° *3° *3° 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 Millimeters Min. Max. *3° *3° *3° *3° 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1236AT3 CYStek Product Specification