BTB1326I3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C816I3 Issued Date : 2003.07.03 Revised Date : Page No. : 1/4 BTB1326I3 Features • Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics • Complementary to BTD2097I3 Symbol BTB1326I3 Outline TO-251 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -20 -15 -6 -5 -10 1 10 150 -55~+150 Unit V V V *1 A W °C °C BTB1326I3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -20 -15 -6 120 Typ. 120 60 Max. -0.5 -0.5 -1.0 560 Unit V V V µA µA V MHz pF Spec. No. : C816I3 Issued Date : 2003.07.03 Revised Date : Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 IC=-4A, IB=-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IC=-50mA, f=30MHz VCB=-20V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range Q 120~270 R 180~390 S 270~560 BTB1326I3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---VCE(SAT)(mV) 1000 Spec. No. : C816I3 Issued Date : 2003.07.03 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current VCE=5V Current Gain---HFE 100 IC=40IB 10 IC=20IB IC=10IB 1 1 10 100 1000 10000 100 VCE=2V VCE=1V 10 1 10 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage---VBE(SAT)(mV) 12 10 8 6 4 2 Power Derating Curve IC=10IB 1000 Power Dissipation---PD(W) 100 1 10 100 1000 10000 0 0 50 100 150 200 Collector Current---IC(mA) Case Temperature---TC(℃ ) Power Derating Curve 1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA(℃ ) BTB1326I3 CYStek Product Specification CYStech Electronics Corp. TO-251 Dimension A B C D Spec. No. : C816I3 Issued Date : 2003.07.03 Revised Date : Page No. : 4/4 Marking: B1326 F 3 E K 2 1 J G I H Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1326I3 CYStek Product Specification