BTB1412J3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 1/7 BTB1412J3 Features • Low VCE(sat), VCE(sat)=-0.5 V (max), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics • Complementary to BTD2118J3 • Pb-free package BVCEO IC RCESAT -30V -5A 75mΩ typ. Symbol BTB1412J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits -40 -30 -6 -5 -10 1 10 150 -55~+150 Unit V V V *1 A W °C °C BTB1412J3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -30 -6 180 Typ. 120 60 Max. -0.5 -0.5 -0.5 390 Unit V V V μA μA V MHz pF Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 2/7 Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-25V, IE=0 VEB=-5V, IC=0 IC=-4A, IB=-0.1A VCE=-2V, IC=-0.5A VCE=-6V, IC=-50mA, f=30MHz VCB=-20V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTB1412J3 Package TO-252 (Pb-free) Shipping 2500 pcs / Tape & Reel Marking B1412 BTB1412J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) VCE=2V Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 3/7 Saturation Voltage vs Collector Current 10000 VCESAT 1000 IC=100IB IC=40IB IC=50IB Current Gain---HFE 100 VCE=1V 100 IC=30IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 10 1 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VBESAT@IC=10IB Output Characteristics 5 Collector Current---IC(A) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 IB=20mA 1000 IB=10mA IB=6mA IB=4mA IB=2mA IB=0 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 2 4 Collector-to-Emitter Voltage---VCE(V) 6 Output Characteristics 9 8 Collector Current---IC(A) 7 6 5 4 3 2 1 0 0 IB=25mA IB=20mA IB=15mA IB=10mA IB=5mA IB=0 IB=50mA Power Derating Curve 12 Power Dissipation---PD(W) 10 8 6 4 2 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 50 100 150 Case Temperature---TC(℃) 200 BTB1412J3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves(Cont.) Power Derating Curve 1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA(℃ ) Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 4/7 Recommended soldering footprint BTB1412J3 CYStek Product Specification CYStech Electronics Corp. Reel Dimension Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 5/7 Carrier Tape Dimension BTB1412J3 CYStek Product Specification CYStech Electronics Corp. Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 6/7 Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds 240 +0/-5 °C 10-30 seconds 6°C/second max. 6 minutes max. Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTB1412J3 CYStek Product Specification CYStech Electronics Corp. TO-252 Dimension Marking: A C Device Name Spec. No. : C816J3 Issued Date : 2003.05.15 Revised Date : 2009.02.04 Page No. : 7/7 B L F G D B1412 Date Code □□ 3 H E K 2 I 1 J Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2441 0.2677 0.2125 0.2283 Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.20 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0449 0.0346 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 1.14 0.88 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead : KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1412J3 CYStek Product Specification