BTB1424AD3_06

CYStech Electronics Corp. Low VCE(sat) PNP Epitaxial Planar Transistor Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date :2006.04.21 Page No. : 1/4 BTB1424AD3 Features • Excellent DC current gain characteristics • Low Saturation Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA. • Complementary to BTD2150AD3 • Pb-free package Symbol BTB1424AD3 Outline TO-126ML B：Base C：Collector E：Emitter EC B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) (Note 1) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -50 -50 -6 -3 -5 1 10 150 -55~+150 Unit V V V A W °C °C Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%. BTB1424AD3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *hFE fT Cob Min. -50 -50 -6 82 Typ. 240 35 Max. -0.1 -0.1 -0.4 -0.5 560 Unit V V V µA µA V V MHz pF Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date :2006.04.21 Page No. : 2/4 Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-20V VEB=-5V IC=-1A, IB=-50mA IC=-2A, IB=-100mA VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank hFE range P 82~180 Q 120~270 R 180~390 S 270~560 BTB1424AD3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date :2006.04.21 Page No. : 3/4 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VCE=5V Current Gain---HFE 1000 VCESAT@IC=60IB 100 VCE=2V 100 VCE=1V 10 VCESAT=30IB VCESAT=10IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 1 1 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current 10000 Power Dissipation---PD(W) Saturation Voltage---(mV) Power Derating Curve 1.2 1 0.8 0.6 0.4 0.2 0 1000 VBESAT@IC=10IB 100 1 10 100 1000 Collector Current---IC(mA) 10000 0 50 100 150 Case Temperature---TA(℃) 200 Power Derating Curve 12 Power Dissipation---PD(W) 10 8 6 4 2 0 0 50 100 150 Case Temperature---TC(℃) 200 BTB1424AD3 CYStek Product Specification CYStech Electronics Corp. TO-126ML Dimension Marking: Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date :2006.04.21 Page No. : 4/4 B1424 Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126ML Plastic Package CYStek Package Code: D3 *: Typical DIM A A1 b b1 c D E Inches Min. Max. 0.118 0.134 0.071 0.087 0.026 0.034 0.046 0.054 0.018 0.024 0.307 0.323 0.425 0.441 Millimeters Min. Max. 3.000 3.400 1.800 2.200 0.660 0.860 1.170 1.370 0.450 0.600 7.800 8.200 10.800 11.200 DIM e e1 L L1 P Φ1 Φ2 Inches Min. *0.090 0.176 0.594 0.051 0.159 0.118 0.122 0.183 0.610 0.059 0.167 0.126 0.130 Max. Millimeters Min. Max. *2.28 4.460 4.660 15.100 15.500 1.300 1.500 4.040 4.240 3.000 3.200 3.100 3.300 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1424AD3 CYStek Product Specification