BTB1424L3

CYStech Electronics Corp. Low VCE(sat) PNP Epitaxial Planar Transistor Spec. No. : C817L3 Issued Date : 2003.07.31 Revised Date :2004.12.15 Page No. : 1/3 BTB1424L3 Features • Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.4V(typ) (IC=-2A, IB=-100mA). •Complementary to BTD2150L3 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed) (Note 1) Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Note : Single pulse, Pw≤10ms, Duty Cycle≤30%. Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -50 -50 -6 -3 -5 (Note) 5 150 -55~+150 Unit V V V A W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -50 -50 -6 82 Typ. 240 35 Max. -0.1 -0.1 -0.5 560 Unit V V V µA µA V MHz pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-40V VEB=-5V IC=-2A, IB=-100mA VCE=-2V, IC=-100mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank HFE range P 82~180 Q 120~270 R 180~390 S 270~560 BTB1424L3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Spec. No. : C817L3 Issued Date : 2003.07.31 Revised Date :2004.12.15 Page No. : 2/3 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VCE=5V Current Gain---HFE 1000 100 10 VCESAT=10IB VCESAT@IC=40IB 100 VCE=2V VCE=1V VCESAT=20IB 10 1 10 100 1000 10000 Collector Current---IC(mA) 1 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) Power Dissipation---PD(W) 6 5 4 3 2 1 0 1 10 100 1000 Collector Current---IC(mA) 10000 0 Power Derating Curve VBESAT@IC=20IB 1000 100 50 100 150 200 Case Temperature---TC(℃) BTB1424L3 CYStek Product Specification CYStech Electronics Corp. SOT-223 Dimension A Spec. No. : C817L3 Issued Date : 2003.07.31 Revised Date :2004.12.15 Page No. : 3/3 Marking: B 1 2 3 C B1424 D E F G H a1 I a2 Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical DIM A B C D E F Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1424L3 CYStek Product Specification