BTB1424LN3

CYStech Electronics Corp. Low VCE(sat) PNP Epitaxial Planar Transistor Spec. No. : C817N3 Issued Date : 2003.06.17 Revised Date:2004.07.01 Page:1/4 BTB1424LN3 Features • Low VCE(sat), typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD2150LN3 Symbol BTB1424LN3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note : Single Pulse Pw≦350µs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg Limit -40 -30 -5 -3 -7 (Note) 225 556 150 -55~+150 Unit V V V A A mW °C/W °C °C BTB1424LN3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 52 100 Typ. -0.3 -1 80 55 Max. -1 -1 -0.5 -2 500 Unit V V V µA µA V V MHz pF Spec. No. : C817N3 Issued Date : 2003.06.17 Revised Date:2004.07.01 Page:2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-30V, IE=0 VEB=-3V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE2 Rank Range Q 100~200 P 160~320 E 250~500 BTB1424LN3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current gain vs Collector current 1000 10000 Spec. No. : C817N3 Issued Date : 2003.06.17 Revised Date:2004.07.01 Page:3/4 Saturation Voltage vs Collector current Current gain---HFE VCE=5V 100 VCE=2V Saturation Voltage---(mV) VCESAT 1000 100 IC=40IB VCE=1V 10 IC=10IB IC=20IB 10 1 10 100 1000 10000 1 1 10 100 1000 10000 Collector current---IC(mA) Collector current---IC(mA) Power Derating Curve 250 Power Dissipation---PD(mW) Saturation Voltage vs Collector current 10000 VBE(SAT )@IC=10IB Saturation Voltage---(mV) 200 150 100 50 0 1000 100 1 10 100 1000 10000 Collector current---IC(mA) 0 50 100 150 200 Ambient Temperature---TA(℃) BTB1424LN3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension A L 3 B 1 2 S Spec. No. : C817N3 Issued Date : 2003.06.17 Revised Date:2004.07.01 Page:4/4 Marking: TE AE V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1424LN3 CYStek Product Specification