CYStech Electronics Corp.
Low VCE(sat) PNP Epitaxial Planar Transistor
Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 1/5
BTB1424N3
Features
• Excellent DC current gain characteristics • Low Saturation Voltage VCE(sat)=-0.25V(typ)(IC=-2A, IB=-100mA). • Complementary to BTD2150N3 • Pb-free package
Symbol
BTB1424N3
Outline
SOT-23
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature
Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%. 2. Device mounted on a ceramic board ( 600mm²×0.8mm)
Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg
Limits -50 -50 -5 -3 -7 0.9 (Note 2) 138.9 150 -55~+150
Unit V V V A W °C/W °C °C
BTB1424N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -50 -50 -5 180 Typ. 240 35 Max. -1 -1 -0.5 560 Unit V V V μA μA V MHz pF
Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 2/5
Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-40V VEB=-5V IC=-2A, IB=-100mA VCE=-2V, IC=-100mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE
Rank Range R 180~390 S 270~560
Ordering Information
Device BTB1424N3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking AE
BTB1424N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current gain vs Collector current
1000 VCE=5V
Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 3/5
C-E saturation voltage vs Collector current
C-E saturation voltage---VCE(SAT)(mV) 10000
Current gain---HFE
1000
100
VCE=2V
100
IC=40IB
VCE=1V
10 IC=10IB 1 1 10 100 1000 10000 Collector current---IC(mA) IC=20IB
10 1 10 100 1000 10000
Collector current---IC(mA)
B -E saturation voltage vs Collector current 10000 B-E saturation---VBE(SAT)(mV)
Power Dissipation---PD(mW)
Power Derating Curve
250 200 150 100 50 0
IC=10IB
1000
100 1 10 100 1000 10000 Collector current---IC(mA)
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTB1424N3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 4/5
Carrier Tape Dimension
BTB1424N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2006.10.13 Page No. : 5/5
A L
Marking:
3 B 1 2 S
T AE
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
C D K
H
J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1424N3
CYStek Product Specification
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