BTC2411L3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 1/4 BTC2411L3 Description • The BTC2411L3 is designed for using in driver stage of AF amplifier and general purpose switching application. • High IC(Max), IC(Max) = 0.6A. • Low VCE(sat) , Typ. VCE(sat) = 0.3V at IC/IB = 500mA/50mA. Optimal for low Voltage operation. • Complementary to BTA1036L3. Symbol BTC2411L3 Outline SOT-223 C E B：Base C：Collector E：Emitter C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits 75 40 6 0.6 5 150 -55~+150 Unit V V V A W °C °C BTC2411L3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEX IEBO *VCE(sat)1 *VCE(sat) 2 *VCE(sat)3 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 75 40 6 0.75 35 50 75 82 40 300 Typ. 6 Max. 10 10 10 0.5 0.4 0.75 0.95 1.2 390 Unit V V V nA nA nA V V V V V Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 2/4 Test Conditions IC=10µA IC=10mA IE=10µA VCB=60V VCE=60V, VBE=-3V VEB=3V IC=380mA, IB=10mA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=5V, IC=20mA, f=100MHz VCB=5V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% MHz pF Classification Of hFE 4 Rank Range P 82~180 Q 120~270 R 180~390 BTC2411L3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 HFE Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) VCE(SAT) Current Gain---HFE IC=20IB 100 VCE=2V VCE=1V 100 IC=10IB 10 0.1 1 10 100 1000 Collector Current ---IC(mA) 10 0.1 1 10 100 Collector Current ---I C(mA) 1000 Saturation Voltage vs Collector Current 10000 1 Cutoff Frequency vs Collector Current Cutoff Frequency---F (GHZ) T Saturation Voltage---(mV) VBE(SAT)@IC=10IB FT@VCE=5V 1000 100 0.1 1 10 100 1000 Collector Current--- I C(mA) 0.1 1 10 100 Collector Current---IC(mA) Power Derating Curve 6 Power Dissipation---PD(W) 5 4 3 2 1 0 0 50 100 150 200 Case Temperature --- TC(℃ ) BTC2411L3 CYStek Product Specification CYStech Electronics Corp. SOT-223 Dimension A Marking: Spec. No. : C203L3 Issued Date : 2005.02.22 Revised Date : Page No. : 4/4 B 1 2 3 C 2X D E F G H a1 I a2 Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical DIM A B C D E F Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC2411L3 CYStek Product Specification