BTC2412N3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2002.10.31 Page No. : 1/4 BTC2412N3 Description • The BTC2412N3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Low Cob. Typ. Cob=2.0pF • Complementary to BTA1037N3 . Equivalent Circuit BTC2412N3 SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 60 50 7 150 225 150 -55~+150 Unit V V V mA mW °C °C BTC2412N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 60 50 7 120 80 Typ. 0.2 180 2 Max. 0.1 0.1 0.4 820 3.5 Unit V V V uA uA V MHz pF Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2002.10.31 Page No. : 2/4 Test Conditions IC=100uA IC=1mA IE=50uA VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE Rank Range Q 120-270 R 180-390 S 270-560 T 410-820 Characteristic Curves C urrent Gain vs Collector Current 1000 HFE@VCE=6V Saturation Voltage-(mV) Current Gain---HFE 1000 VCE(SAT)@IC=10IB Saturation Voltage vs Collector Current 100 100 0.1 1 10 100 1000 Collector Current--- IC(mA) 10 0.1 1 10 100 1000 Collector Current--- IC(mA) BTC2412N3 CYStek Product Specification CYStech Electronics Corp. Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1 Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2002.10.31 Page No. : 3/4 C utoff Frequency vs Collector Current VBE(SAT)@IC=10IB FT@VCE=12V 100 0.1 1 10 100 1000 Collector Current ---IC(mA) 0.1 1 10 Collector Current---IC(mA) 100 PD - Ta 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature ---Ta(℃ ) BTC2412N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C202N3 Issued Date : 2002.05.11 Revised Date : 2002.10.31 Page No. : 4/4 A L 3 B 1 2 S Marking: TE C4 V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Dimension and tolerance based on our Spec. dated Feb. 18,2002. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC2412N3 CYStek Product Specification