BTC4097S3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C203S3 Issued Date : 2002.05.11 Revised Date : 2002.11.01 Page No. : 1/4 BTC4097S3 Description • The BTC4097S3 is designed for use in driver stage of AF amplifier and general purpose switching application. • High IC Max . IC Max = 0.6A • Low Vce(set) . TYP. Vce(set) = 0.2V at IC/IB = 500mA/50mA Optimal for low Voltage operation • Complementary to BTA1577S3. Symbol BTC4097S3 Outline SOT-323 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 60 40 6 0.6 225 150 -55~+150 Unit V V V A mW °C °C BTC4097S3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min. 60 40 6 20 40 80 82 40 250 Typ. 0.2 Max. 100 0.4 0.75 0.95 1.2 390 6.5 Unit V V V nA V V V V Spec. No. : C203S3 Issued Date : 2002.05.11 Revised Date : 2002.11.01 Page No. : 2/4 Test Conditions IC=100uA IC=1mA IE=10uA VCE=35V, VBE=-0.4V IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=150mA VCE=2V, IC=500mA VCE=10V, IC=20mA, f=100MHz VCB=5V, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% MHz pF Classification Of hFE4 Rank Range P 82~180 Q 120~270 R 180~390 BTC4097S3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) 1000 Spec. No. : C203S3 Issued Date : 2002.05.11 Revised Date : 2002.11.01 Page No. : 3/4 Saturation Voltage vs Collector Current HFE@VCE=3V Current Gain---HFE VCE(SAT)@IC=10IB 100 100 10 0.1 1 10 100 1000 Collector Current ---IC(mA) 10 1 10 100 1000 Collector Current ---IC(mA) Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1 C utoff Frequency vs Collector Current FT@VCE=5V VBE(SAT)@IC=10IB 100 0.1 1 10 100 1000 Collector Current--- IC(mA) 0.1 1 10 Collector Current---IC(mA) 100 Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) BTC4097S3 CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension Spec. No. : C203S3 Issued Date : 2002.05.11 Revised Date : 2002.11.01 Page No. : 4/4 3 A Marking: A1 Q Lp detail Z W B C 1 e1 e D bp 2 TE 2X E A Z θ He 0 1 scale 2 mm 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 v A Style: Pin 1.Base 2.Emitter 3.Collector *: Typical DIM A A1 bp C D E e Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - DIM e1 He Lp Q v w θ Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 - Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10° 0° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4097S3 CYStek Product Specification