BTC4505N3

CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 BTC4505N3 Features • High breakdown voltage. (BVCEO =400V) • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. • Complementary to BTA1759N3 Symbol BTC4505N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limit 400 400 6 300 0.225 150 -55~+150 Unit V V V mA W °C °C BTC4505N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 400 400 6 100 Typ. 0.1 20 7 Max. 10 20 10 0.5 1.5 270 Unit V V V µA nA µA V V MHz pF Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=400V, IE=0 VCE=300V, REB=4kΩ VEB=6V,IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA, f=10MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% BTC4505N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) 10000 Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 3/4 Saturation Voltage vs Collector Current Current Gain---HFE 100 VCE = 10V 1000 VCE(SAT) @ IC = 20IB 10 VCE = 5V VCE = 1V 100 VCE(SAT) @ IC = 10IB 1 1 10 100 Collector Current---IC(mA) 1000 10 1 10 Collector Current---IC(mA) 100 Saturation Voltage vs Collector Current 1000 Power Dissipation---PD(mW) Saturation Voltage---(mV) 250 200 150 100 50 0 1 10 100 1000 0 Power Derating Curve VBE(SAT) @ IC =10IB 100 Collector Current---IC(mA) 50 100 150 200 Ambient Temperature---TA(℃) BTC4505N3 CYStek Product Specification CYStech Electronics Corp. SOT-23 Dimension Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 4/4 A L 3 B 1 2 S Marking: TE 3D V G 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector C D K H J *: Typical DIM A B C D G H Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4505N3 CYStek Product Specification