CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C653D3 Issued Date : 2003.10.03
Revised Date : Page No. : 1/4
BTC5201D3
• Low VCE(sat) • High BVCEO • Excellent current gain characteristics
Features
Symbol
BTC5201D3
Outline
TO-126ML
B:Base C:Collector E:Emitter ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
BTC5201D3 CYStek Product Specification
Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg
Limits 80 80 6 8 16 (Note 1) 1 1.5 20 83.3 6.25 150 -55~+150
Unit V V V A A W °C/W °C/W °C °C
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCEO(SUS) ICES IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 *hFE 1 *hFE 2 fT Cob Min. 80 60 40 Typ. 0.1 50 130 Max. 10 50 0.3 0.6 1.2 1.5 Unit V µA µA V V V V MHz pF
Spec. No. : C653D3 Issued Date : 2003.10.03
Revised Date : Page No. : 2/4
Test Conditions IC=30mA, IB=0 VCE=80V, VBE=0 VEB=5V,IC=0 IC=2A, IB=0.2A IC=8A, IB=0.4A IC=2A, IB=0.2A IC=8A, IB=0.8A VCE=1V, IC=0.1A VCE=1V, IC=4A VCE=6V, IC=500mA, f=20MHz VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTC5201D3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE = 5V
Spec. No. : C653D3 Issued Date : 2003.10.03
Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)
Saturation Voltage---(mV)
Current Gain---HFE
100
IC = 40IB
100
VCE = 2V VCE = 1V
10
IC = 10IB IC = 20IB
10 1 10 100 1000 10000 Collector Current---IC(mA)
1 1 10 100 1000 10000 Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000 Power Dissipation---PD(W)
VBE(SAT) @ IC =10IB
Power Derating Curve
1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 50 100 150 Ambient Temperature---TA(℃) 200
Saturation Voltage---(mV)
1000
100 1 10 100 1000 10000 Collector Current---IC(mA)
Power Derating Curve
25 Power Dissipation---PD(W) 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC(℃)
BTC5201D3
CYStek Product Specification
CYStech Electronics Corp.
TO-126ML Dimension
Marking:
Spec. No. : C653D3 Issued Date : 2003.10.03
Revised Date : Page No. : 4/4
A D E F 3 2 N 1 M L G J K O H C
B
C5201
I
Style: Pin 1.Emitter 2.Collector 3.Base 3-Lead TO-126ML Plastic Package CYStek Package Code: D3
*: Typical
DIM A B C D E F G H
Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562
Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42
DIM I J K L M N O
Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842
Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC5201D3
CYStek Product Specification
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